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Priority to TW88121108ApriorityCriticalpatent/TW429405B/en
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Publication of TW429405BpublicationCriticalpatent/TW429405B/en
This invention is about a kind of method for fabricating capacitor and includes the following procedures. At first, a first conduction layer is formed on substrate, in which the first conduction layer is formed by metal. An insulation layer is formed on top of the first conduction layer. The thickness of insulation layer is smaller than one tenth of the thickness of the first conduction layer and the insulation layer is composed of dielectric material. A second conduction layer is then formed on the insulation layer, in which the second conduction layer is formed by metal. Pattern is then defined on the second conduction layer. The subsequent procedure is to form photoresist pattern to cover the patterned second conduction layer, and part of substrate surface that is adjacent to the patterned second conduction layer. The area of the photoresist pattern is larger than the patterned area of the second conduction layer. Finally, the insulation layer and the first conduction layer are etched.
TW88121108A1999-11-301999-11-30Method for fabricating capacitor
TW429405B
(en)