TW429271B - Introducing process fluid over rotating substrates - Google Patents

Introducing process fluid over rotating substrates

Info

Publication number
TW429271B
TW429271B TW87116337A TW87116337A TW429271B TW 429271 B TW429271 B TW 429271B TW 87116337 A TW87116337 A TW 87116337A TW 87116337 A TW87116337 A TW 87116337A TW 429271 B TW429271 B TW 429271B
Authority
TW
Taiwan
Prior art keywords
process fluid
processing chamber
fluid over
introducing process
over rotating
Prior art date
Application number
TW87116337A
Other languages
English (en)
Chinese (zh)
Inventor
Brian L Haas
James V Tietz
Meredith J Williams
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW429271B publication Critical patent/TW429271B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW87116337A 1997-10-10 1998-10-01 Introducing process fluid over rotating substrates TW429271B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94853797A 1997-10-10 1997-10-10

Publications (1)

Publication Number Publication Date
TW429271B true TW429271B (en) 2001-04-11

Family

ID=25487971

Family Applications (1)

Application Number Title Priority Date Filing Date
TW87116337A TW429271B (en) 1997-10-10 1998-10-01 Introducing process fluid over rotating substrates

Country Status (5)

Country Link
EP (1) EP1025279A1 (ja)
JP (1) JP2001520456A (ja)
KR (1) KR20010031054A (ja)
TW (1) TW429271B (ja)
WO (1) WO1999019536A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
TWI290740B (en) 1999-08-26 2007-12-01 Hitachi Chemical Co Ltd Polishing compound for chemical-mechanical polishing and polishing method
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
DE102008012333B4 (de) * 2008-03-03 2014-10-30 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten
JP5176679B2 (ja) * 2008-05-08 2013-04-03 信越半導体株式会社 薄膜の気相成長方法
JP5837290B2 (ja) * 2010-08-31 2015-12-24 信越半導体株式会社 エピタキシャルウェーハの製造方法及びエピタキシャル成長装置
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
WO2014083400A1 (en) * 2012-11-27 2014-06-05 Soitec Deposition systems having interchangeable gas injectors and related methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924807A (en) * 1986-07-26 1990-05-15 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for chemical vapor deposition
FR2661554A1 (fr) * 1990-04-30 1991-10-31 Philips Electronique Lab Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices.
EP0605725B1 (en) * 1991-09-27 1999-08-25 Komatsu Electronic Metals Co., Ltd Apparatus for introducing gas, and apparatus and method for epitaxial growth
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating

Also Published As

Publication number Publication date
JP2001520456A (ja) 2001-10-30
WO1999019536A1 (en) 1999-04-22
KR20010031054A (ko) 2001-04-16
EP1025279A1 (en) 2000-08-09

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Legal Events

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GD4A Issue of patent certificate for granted invention patent