TW428318B - The manufacturing method of the bit line of flash memory - Google Patents

The manufacturing method of the bit line of flash memory

Info

Publication number
TW428318B
TW428318B TW88122146A TW88122146A TW428318B TW 428318 B TW428318 B TW 428318B TW 88122146 A TW88122146 A TW 88122146A TW 88122146 A TW88122146 A TW 88122146A TW 428318 B TW428318 B TW 428318B
Authority
TW
Taiwan
Prior art keywords
layer
bit line
doped polysilicon
silicon layer
flash memory
Prior art date
Application number
TW88122146A
Other languages
Chinese (zh)
Inventor
Dung-Shing Li
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122146A priority Critical patent/TW428318B/en
Application granted granted Critical
Publication of TW428318B publication Critical patent/TW428318B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A manufacturing method of the bit line of flash memory, wherein a SOI substrate is provided which comprises a buried oxide layer and the silicon layer on the buried oxide layer followed by forming a patterned hardmask layer on the silicon layer, remove the exposed silicon layer by using the hardmask layer as the mask, and form a bit line opening till the depth of the buried oxide layer of the portion under the silicon layer. Then cover a conformal lightly doped polysilicon layer on the substrate followed by covering a heavily doped polysilicon layer on the substrate, and fill the opening of the bitline. Then remove part of the lightly doped polysilicon layer and heavily doped polysilicon layer till the surface of the silicon layer to form a buried bitline, and then remove the hardmask layer.
TW88122146A 1999-12-16 1999-12-16 The manufacturing method of the bit line of flash memory TW428318B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122146A TW428318B (en) 1999-12-16 1999-12-16 The manufacturing method of the bit line of flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122146A TW428318B (en) 1999-12-16 1999-12-16 The manufacturing method of the bit line of flash memory

Publications (1)

Publication Number Publication Date
TW428318B true TW428318B (en) 2001-04-01

Family

ID=21643413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122146A TW428318B (en) 1999-12-16 1999-12-16 The manufacturing method of the bit line of flash memory

Country Status (1)

Country Link
TW (1) TW428318B (en)

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