422745 v ίΓ 五、發明説明（/ ) 發明領域： 本發明係有關於一種晶圆經過化學機械研磨製程後 之清洗方法，特別是指以化學溶液洗去晶圔表面之研聚 以及清除滲入晶圓表層之金屬離子之方法。 發明背景： 化學機械研磨法(Chemical-Mechanical Polishing)，簡 稱為CMP，是目前半導親製程中最常被用來進行晶圃表 面全面性平坦化(Global Planarization)的一種新技術。其主 要的技術原理孫將县圓放置於CMP之研磨台（圖中未示) 上，以機械手段配合研磨漿(Slurry)進行研磨，常見之化 學機械研磨法可分為三種，複晶矽和金屬層間介電層之 化學機械研磨法OLD CMP)、金屬層間介電層化學機械研 磨法〇MD CMP)以及鵁的化學機械研磨法(W CMP)» 請參閲圈一所示，其係晶圓2進行CMP製程後之示意 圖，該晶圓2包括一電性層21以及介電層22，該電性層21 可以是多晶矽層或金屬層，利用研磨墊4和研磨微粒61以 化學機械手段將晶圓2表面磨平，由於研漿64本身通常含 有KOH或Fe(N〇3>SKI〇3等溶液，該溶液中之金屬離子很 容易因為解離滲透進入晶圓2表層而影響晶圓2的品質， 晶®2經過CMP研磨之後其表面將如圈二所示，對於晶圏 2在經過CMP製程後之清洗，主要是為了要清除晶圓2表 面之研磨微粒61、介電層微粒62以及晶圓2表層之金屬離 子63。 目前半導體業界對於CMP製程後晶圓2之清洗主要是 ____2___ ----.--.----^-------iTl·-----線-I (請先閱讀背面之法意事項再填寫衣頁) 本紙浪尺度通.·丨1中囡國家標潭i (「NS M4規樁（2UVX297公釐） 422745 五'發明説明（Λ ) 以刷洗方式進行’請參閱圖三所示，其係用於清洗晶圓2 之軟毛刷l(Soft Brushes)，該軟毛刷1包括一握桿11和一刷 頭12，該握桿11之内部係為中空，其一端舆刷頭12相連 接另一端係舆水管3相連接，清洗人員α手握握桿11並以 刷頭12進行晶面2表面之刷洗’同時水亦由刷頭12處不斷 地流出以便將研磨微粒61以及介電層微粒62沖掉，然 而’以軟毛刷12對晶面2進行CMP製程後之清洗具有下列 幾項缺點： ⑻ΚΟΗ、Fe(Na>或Κΐα溶液中所含之金屬離子63會滲透 進入晶圓2表面，軟毛刷1無法有效去除。 (b) 軟毛刷1在清除微粒之過程中本身也會沾附晶圓2表面 之微粗’若再進行下一片晶圓2之清洗時會刮傷晶圓2 表面，特別是針對於WCMP製程。 (c) 軟毛刷1在清除微粒之過程中本身會沾附雜質，例如氟 化氫、光阻或其它化學物質，該雜質可能會污染下一 片县圓2。 (d) 以軟毛刷1方式清洗的晶圓2良率較低，約37%。 ⑻軟毛刷1必須不斷地沖水以避免刷頭11硬化，因此容易 形成水資源的浪费且軟毛刷1損壞率高。 發明目的： 本發明之主要目的在於提供一種晶圓經過化學機械 研磨製程後之清洗方法，以去除晶圓表面之研磨微粒、 介電層微粒以及金屬離子，同時不會造成晶圓表面之刮 傷和污染，其主要步驟包括：⑻以鹼性溶液清洗县圓表 -----3_ 本纸張尺度通用中囡围家標法（CNS ) Λ4规格、2〗0+λ：!97公缓） ---1--„-----^------訂 線. (讀先閱請背面之注意事項再填寫太頁} 422745 五、發明説明〈j ) 面；（b)以氩氧化銨和過氧化氫水溶液洗去晶圓表面之研 磨微粒；（c)以氟化氩水溶液洗去晶圓表面之介電層微 粒；（d)以齒化氫和過氧化氫水溶液將滲透進入晶圓表層 之金屬離子去除。 本創作之另一目的係在於提供一種晶圓經過化學機 械研磨製程後之洗滌槽，包括一外殼、一旋轉基座以及 一灑水器，該外殼係呈躕筒狀其上方具有一開口並以一 蓋髏將開口遮蔽’其下方具有一排水口；該旋轉基座具 有一旋轉槽以及複數個容置匣，該旋轉槽中間具有一旋 轉軸並固定於外殼内側之底部，又複數個容置匣係平均 分佈於旋轉槽上，且每個容置匣上可以放置複數個晶 圓；該灑水器係係設於洗滌槽内部中間，其上設有複數 個喷嘴；將經過CMP製程後之晶圓置於容置匣上，依據 前述之清洗步驟將各隋段所需之清洗溶液輸入於灑水器 中，藉由瀛水器之複數個喷嘴將溶液喷灑於晶圓表面， 並配合旋轉基座之旋轉以達到清洗晶圓之目的。 為讓贵審査委員能對本發明之目的、特徵及功效， 有更進一步的瞭解舆認同，茲配合圖式詳加說明如后： 圖式之簡單說明： 圖一係晶圓進行CMP製程之示意圈。 圖二係县面經過CMP製程之示意曲。 圈三係習知技術以軟毛刷清洗晶圓示意圖。 Η四係本發明之晶蹰經過化學機械研磨製程後之 清洗方法流程圈。 ----------^-----,------訂------線 (請先閱讀背面之注意事項再填(ΓΓ本頁) 本紙張尺度適州中國國家標辛i ) Λ4规格ί 2!0'Χ297公釐） 422了 4 5 Λ- 422了 4 5 Λ- 11〜握桿 2〜县圓 22~介電層 4~研磨墊 五、發明説明（) 圖五係本發明之晶圓經過化學機械研磨製程後之洗滌槽 示意圖》 圖式中之圖號說明 1~軟毛刷 12〜刷頭 21~電性層 3~水管 51~鹼性溶液 52~氩氧化銨和過氧化氫水溶液 53~去離子水 54~氟化氩水溶液 55~由化氩和過氧化氫水溶液 61~研磨微粒 62〜介電層微粒 63〜金屬離子 64~研漿 詳鈿說明： 本發明之晶圓2經過化學機械研磨製程後之清洗方 法，係以化學溶液對晶圓2表面進行喷洗之方式去除沾附 於晶圓2表面之研磨微粒61、介電層微粒62以及滲透進入 晶圓2表面之金屬離子63，由於晶圃2在進行CMP製程時 係將晶圓2置於研磨台（圖中未示)上，以機械研磨方式配 合研漿64以去除晶圓2表面之不平坦部分進而達到全面性 平坦化。因此，晶圃2在經過CMP製程之後其表面將會沾 附有研磨微粒61、介電層微粒62以及滲透進入晶圖表層 之金屬離子63，本發明之實施步驟包括： (a)以鹼性溶液51清洗晶圓2表面，該鹼性溶液51係以氩氧 本紙張尺度適用中國围家標準,:CNS ) Λ4规格（210X297公釐） --------;-----,f --------訂------線 {請先閱讀背面之注意事項再填艿本頁) .""^中央禕觅局只工消贽合忡社印^ 422745 Λ* ΪΓ 五、發明説明（/ ) 化銨或過氧化氩溶液為最佳，其中氩氧化銨(過氧化氣) 大約佔整逋溶液之15〜25%，清洗晶«2的溫度約為攝 氏40-60度，時間約為5~15秒(請參閱圈四Α)。 (b) 以氩氧化銨和過氧化氩水溶液52洗去晶圓2表面之研磨 微粒61，其中氩氧化銨舆過氧化氫分別大約佔整逋溶 液之10~20%，清洗晶面2的溫度约為攝氏75~80度，時 間约為8~12分鐘(請參闓圈四B)。 (c) 以去離子水53清洗晶圓2表面之殘留物質，清洗溫度以 攝氏20~30度為最佳，清洗時間約為4~6分鐘(請參閲圖 四C)β ⑹以氟化氫水溶液54洗去晶圓2表面之介電層微粒62,其 中氟化氩大約佔整髏溶液之1,5〜2.5%，清洗晶圔2之溫 度約為攝氏20~30度為最佳，清洗時間約為10-25秒(請 參閲圈四D)。 ⑹以去離子水53清洗晶圓2表面之殘留物質，清洗溫度以 攝氏20〜30度為最佳，清洗時間約為4~6分鐘(請參閱圖 四Ε)。 (f) 以6化氩和過氧化氩水溶液55將滲透進入晶圓2表層之 金Λ離子63去除，該幽化氩化合物係以氣化氩為最 佳，且i化氩舆過氧化氫大約分別佔整«溶液之 8~16%，清洗溫度約為攝氏75~80度，清洗時間約為 8~12分鐘(請參閲圈四巧。 (g) 以去離子水53清洗晶圓2表面之殘留物質，清洗溫度以 攝氏20〜30度為最佳，清洗時間約為4~6分鐘(請參閱圖 本紙浪尺度適;il中國國家標準（CNS ) Λ4現格ί 21〇χ6297公f > " ' - -----i--- n i I— n 1_ -------- T n n i _1 I _ 泉 "i *-? i··7 (請先閱請背面之注急事項再填寫太頁) 42274 5 ·φ，.^"-局 ΰί r-'-消贽合作社印 ¥ 五、發明説明（么：！ 四G)。 經過上述之清洗方法不僅可以將沾附於晶圓2表面之 研磨微粗61、介電層微粒62以及滲透進入晶圓2表層之金 屬離子63除去，在清洗的過程中更不會像習知技術之軟 毛刷1發生晶圓2表面刮傷或遭受雜質污染的情形，因此 晶圓的良率可以提升至90%。 請參Μ圈五所示，其所顯示係針對於本發明之晶圓 經過化學機械研磨製程後之清洗方法而設計之洗滌槽7， 包括一外殼71、一旋轉基座72以及一瀧水器73，該外殼 71係呈圓筒狀其上方具有一開口並以一蓋濮712將開口遮 蔽’其下方具有一排水口713 ;該旋轉基座72具有一旋轉 槽721以及複數個容置匣723(以4個為最佳），該旋轉槽721 中間具有一旋轉軸722且固定於外殼71内側之底部，又複 數個容置匣723係平均分佈於旋轉槽721内，且每個容置 匣723上可以放置複數個晶圓2(約24個晶圓2);該灑水器 73係係設於洗滌槽7内部中間，其上設有複數個喷嘴 731 ;將經過CMP製程後之晶圓2置於容置匣723上，依據 前述之清洗步驟將各階段之所需之清洗溶液輸入於遒水 器73中，藉由灑水器73之複數個喷嘴731將溶液喷滇於晶 圓2表面，清洗後之溶液可以由排水口713排出。 由於本發明之洗滌槽7每次可以清洗96個晶圓，每小 時可以完成128個晶»的清洗，較習知技術以軟毛刷1每 小時僅可以完成61個晶圓2，其清洗速度明類較怏；又本 發明係以機器設備方式清洗，其所耗费的成本僅僅只有 讀先閱讀背荀之注意事項再填气太頁) •-b _ ,-.· 本纸張尺度適用中园囡家橾準（CNS ) Λ4規格!+ 2:ΟΧ297公釐* :""邓十："•^龙妁·-^·-1·^5资合作社印製 42274 5 五、發明説明（7 ) 清洗溶液和電源，相較之下習知技術在清洗每片晶圓2所 耗费的成本約為本發明之1.65倍；又本發明之清洗方式可 以同時處理經過WCMP製程後之晶圓2,而習知技術之軟 毛刷1無法達成，此外，習知技術必須要不斷地供應去離 子水，平均每分鐘需要4加侖與本發明相較係相當浪費β 综合言之，本發明在清洗的效果上可以明顯地提升 晶圓2的良率，在清洗的速度上可以明顯地加怏，在清洗 的成本上可以有效地降低，同時可以適用於不同的CMP 製程，實足以滿足發明專利之要件爰依法提出發明專利 之申請，謹請貴審査委員惠予審視並賜准專利為祷。 當然，以上所述僅為本發明之較佳實施例，其不應 用以侷限本發明之實施範圍，任何熟習該項技藝者在不 違背本發明之精神所做之任何修改均應屬於本發明之範 面，因此本發明之保護範園當以下列所述之申請專利範 圍做為依據。 (請先聞讀背面之"意事項耳填寫本頁)422745 v ίΓ V. Description of the invention (/) Field of the invention: The present invention relates to a method for cleaning a wafer after a chemical mechanical polishing process, in particular to use a chemical solution to wash off the surface of the wafer and remove the infiltrated wafer Surface metal ion method. BACKGROUND OF THE INVENTION: Chemical-Mechanical Polishing, referred to as CMP for short, is a new technology most commonly used in the global semi-conductor process for global planarization of the crystal garden surface. The main technical principle is that Sun Yuan placed the grinding table on the CMP (not shown in the figure) and mechanically used the grinding slurry (Slurry) for grinding. Common chemical mechanical grinding methods can be divided into three types: polycrystalline silicon and silicon. Chemical mechanical polishing method for metal interlayer dielectric layer (OLD CMP), chemical mechanical polishing method for metal interlayer dielectric layer (MD CMP), and chemical mechanical polishing method (W CMP) »See circle one, its crystal Schematic diagram of the circle 2 after the CMP process. The wafer 2 includes an electrical layer 21 and a dielectric layer 22. The electrical layer 21 may be a polycrystalline silicon layer or a metal layer. The polishing pad 4 and the polishing particles 61 are used by chemical mechanical means. The surface of wafer 2 is polished. Since the slurry 64 itself usually contains a solution such as KOH or Fe (N03> SKI〇3), metal ions in the solution can easily affect the wafer 2 due to dissociation and penetration into the surface layer of the wafer 2. The quality of the wafer 2 after CMP polishing will be as shown in circle 2. For the cleaning of the wafer 2 after the CMP process, the main purpose is to remove the abrasive particles 61 and the dielectric layer particles 62 on the surface of the wafer 2. And metal ions 63 on the surface of wafer 2. The semiconductor industry's cleaning of wafer 2 after the CMP process is mainly ____2___ ----.--.---- ^ ------- iTl · ----- line-I (Please read the back first Please fill in the clothing page for legal and legal matters.) This paper is a standard paper. · 丨 1 China National Standard Pool i ("NS M4 gauge pile (2UVX297 mm) 422745 Five 'Invention (Λ) by brushing method' Please refer to the figure As shown in FIG. 3, it is a soft brush 1 for cleaning wafer 2. The soft brush 1 includes a grip 11 and a brush head 12. The interior of the grip 11 is hollow, and one end is brushed. The head 12 is connected to the other end, and the water pipe 3 is connected. The cleaning person α holds the lever 11 and brushes the surface 2 of the crystal surface 2 with the brush head 12 '. At the same time, water is continuously flowing from the brush head 12 to grind the abrasive particles 61. The dielectric layer particles 62 are washed away. However, the cleaning after the CMP process of the crystal surface 2 with the soft bristle brush 12 has the following disadvantages: ⑻ΚΟ63, Fe (Na >, or κΐα solution contains metal ions 63 that penetrate into On the surface of wafer 2, the soft bristle brush 1 cannot be effectively removed. (B) In the process of removing particles, the soft bristle brush 1 will also adhere to the rough surface of the wafer 2 '. The cleaning of the next wafer 2 will scratch the surface of the wafer 2, especially for the WCMP process. (C) The soft bristle brush 1 will be contaminated with impurities such as hydrogen fluoride, photoresist or other chemicals during the process of removing particles. This impurity may contaminate the next slice of county circle 2. (d) The yield of wafer 2 cleaned by soft brush 1 is low, about 37%. ⑻ Soft brush 1 must be constantly flushed to avoid hardening of brush head 11 Therefore, it is easy to form a waste of water resources and the damage rate of the soft-bristle brush 1 is high. Purpose of the invention: The main purpose of the present invention is to provide a method for cleaning wafers after a chemical mechanical polishing process, so as to remove abrasive particles, dielectric layer particles, and metal ions on the wafer surface without causing scratches on the wafer surface. And pollution, the main steps include: 清洗 washing county round table with alkaline solution ---- -3_ This paper standard is commonly used in the Chinese standard method (CNS) Λ4 specification, 2〗 0 + λ:! 97 public delay ) --- 1-„----- ^ ------ Order the line. (Read the pre-read please read the notes on the back before filling in the page} 422745 V. Description of the invention <j); (b) The abrasive particles on the wafer surface were washed with argon ammonium oxide and hydrogen peroxide aqueous solution; (c) the dielectric layer particles on the wafer surface were washed with argon fluoride aqueous solution; (d) Removal of metal ions penetrating into the surface of the wafer. Another purpose of this creation is to provide a washing tank after the wafer undergoes a chemical mechanical polishing process, which includes a housing, a rotating base, and a sprinkler.蹰 cylindrical shape with an opening above it and covering it with a skull The rotating base has a rotating groove and a plurality of receiving boxes. The rotating groove has a rotating shaft in the middle and is fixed to the bottom of the inside of the housing. The plurality of receiving boxes are evenly distributed on the rotating groove. A plurality of wafers can be placed on each containing box; the sprinkler is arranged in the middle of the washing tank, and there are a plurality of nozzles thereon; the wafer after the CMP process is placed on the containing box, According to the foregoing cleaning steps, the cleaning solution required for each stage is input into the sprinkler, and the solution is sprayed on the wafer surface through a plurality of nozzles of the decanter, and the rotation of the rotating base is used to achieve the cleaning crystal. In order to allow your reviewers to further understand the purpose, features and effects of the present invention, we will explain in detail with the drawings as follows: Brief description of the drawings: Figure 1 is a wafer for CMP Schematic circle of the manufacturing process. Figure 2 is the schematic curve of the county surface after the CMP process. Circle 3 is a schematic diagram of the conventional technology for cleaning wafers with a soft brush. Η Fourth is the cleaning method of the crystal of the present invention after the chemical mechanical polishing process. Cheng circle. ---------- ^ -----, ------ Order ------ line (Please read the notes on the back before filling (ΓΓ page) This Paper size Shizhou China National Standard i) Λ4 specifications ί 2! 0 '× 297 mm) 422 4 5 Λ- 422 4 4 Λ-11 ~ grip 2 ~ county circle 22 ~ dielectric layer 4 ~ polishing pad V. Description of the invention () Figure 5 is a schematic diagram of the washing tank after the wafer of the present invention undergoes a chemical mechanical polishing process. The drawing number in the drawing illustrates 1 ~ soft brush 12 ~ brush head 21 ~ electrical layer 3 ~ water pipe 51 ~ Alkaline solution 52 ~ Ammonium argon oxide and hydrogen peroxide aqueous solution 53 ~ Deionized water 54 ~ Aqueous argon fluoride solution 55 ~ Aqueous argon and hydrogen peroxide solution 61 ~ Abrasive particles 62 ~ Dielectric layer particles 63 ~ Metal ions 64 ~ The detailed description of the research slurry: The cleaning method of the wafer 2 after the chemical mechanical polishing process of the present invention is to remove the abrasive particles 61, media attached to the surface of the wafer 2 by spraying and cleaning the surface of the wafer 2 with a chemical solution. The electrical layer particles 62 and the metal ions 63 penetrated into the surface of the wafer 2. Because the crystal garden 2 performs the CMP process, the wafer 2 is placed on a polishing table (not shown), and is mechanically polished. Slurry 64 to remove a portion of the uneven surface of the wafer 2 so as to achieve a comprehensive planarization. Therefore, after the CMP process, the surface of the crystal garden 2 will be contaminated with abrasive particles 61, dielectric layer particles 62, and metal ions 63 penetrated into the crystal pattern layer. The implementation steps of the present invention include: (a) alkaline The solution 51 cleans the surface of the wafer 2. The alkaline solution 51 is argon-oxygen. The paper standard is applicable to Chinese standards, CNS) Λ4 specification (210X297 mm) --------; ----- , f -------- Order ------ line {Please read the notes on the back before filling this page). " " ^ 422745 Λ * ΪΓ 5. Description of the invention (/) Ammonium oxide or argon peroxide solution is the best, among which ammonium argon oxide (peroxide gas) accounts for about 15 ~ 25% of the whole solution, and the temperature of cleaning crystal «2 It is about 40-60 degrees Celsius, and the time is about 5-15 seconds (see circle 4A). (b) Wash the abrasive particles 61 on the surface of wafer 2 with ammonium argon oxide and argon peroxide aqueous solution 52. Among them, ammonium argon oxide and hydrogen peroxide account for about 10-20% of the total solution, respectively. The temperature is about 75 to 80 degrees Celsius, and the time is about 8 to 12 minutes (see circle 4B). (c) Clean the residual material on the surface of wafer 2 with deionized water 53. The best cleaning temperature is 20-30 degrees Celsius. The cleaning time is about 4-6 minutes (see Figure 4C). 54 The dielectric layer particles 62 on the surface of the wafer 2 are washed away. Among them, argon fluoride accounts for about 1,5 to 2.5% of the whole solution. The temperature of the cleaning crystal 2 is about 20 to 30 degrees Celsius. It is best to clean. The time is about 10-25 seconds (see circle 4D). (2) Residual material on the surface of wafer 2 is cleaned with deionized water 53. The best cleaning temperature is 20 to 30 degrees Celsius. The cleaning time is about 4 to 6 minutes (see Figure 4E). (f) Removal of gold ions 63 penetrating into the surface layer of wafer 2 with argon hexaoxide and argon peroxide aqueous solution 55. The sequestered argon compound is preferably gasified argon and hydrogen peroxide is approximately hydrogen peroxide. They account for 8 to 16% of the total solution, the cleaning temperature is about 75 to 80 degrees Celsius, and the cleaning time is about 8 to 12 minutes (please refer to the circle). (G) Clean the surface of wafer 2 with deionized water 53 For residual materials, the cleaning temperature is preferably 20 to 30 degrees Celsius, and the cleaning time is about 4 to 6 minutes (please refer to the paper and the paper scale is appropriate; il Chinese National Standard (CNS) Λ4 is now ί 21〇χ6297 male f > " '------ i --- ni I— n 1_ -------- T nni _1 I _ spring " i *-? i ·· 7 (Please read the first For urgent matters, please fill in the page too) 42274 5 · φ,. ^ &Quot;-局 ΰί r -'- 消 贽 联 社 印 ¥ 5. Description of the invention (Which :! Four G). After the above cleaning method can not only stain Grinding micro-roughness 61, dielectric layer particles 62, and metal ions 63 penetrating into the surface layer of wafer 2 are removed on the surface of wafer 2. In the cleaning process, wafer 2 does not occur like the soft brush 1 of conventional technology. Scratched or scratched surface In the case of impurity contamination, the yield of the wafer can be increased to 90%. Please refer to circle 5 of the figure, which shows the washing tank designed for the cleaning method of the wafer after the chemical mechanical polishing process of the present invention 7, including a housing 71, a rotating base 72 and a decanter 73, the housing 71 is cylindrical and has an opening above it and a cover 712 covers the opening 'there is a drainage opening 713; The rotating base 72 has a rotating slot 721 and a plurality of receiving boxes 723 (4 are preferred). The rotating slot 721 has a rotating shaft 722 in the middle and is fixed to the bottom of the inner side of the casing 71, and a plurality of receiving slots. The boxes 723 are evenly distributed in the rotating tank 721, and a plurality of wafers 2 (about 24 wafers 2) can be placed on each containing box 723; the sprinkler 73 is located in the middle of the washing tank 7, A plurality of nozzles 731 are provided thereon; the wafer 2 after the CMP process is placed on the holding box 723, and the required cleaning solution at each stage is input into the decanter 73 according to the aforementioned cleaning steps, by The plurality of nozzles 731 of the sprinkler 73 spray the solution on the surface of the wafer 2, The subsequent solution can be discharged through the drainage port 713. Since the washing tank 7 of the present invention can clean 96 wafers at a time, it can complete the cleaning of 128 crystals per hour. Compared with the conventional technique, it can only be completed with a soft brush 1 per hour. 61 wafers 2, the cleaning speed of which is relatively poor; and the present invention is cleaning by machine equipment, the cost of which is only to read the precautions of reading the back first, and then filling the gas page) • -b _, -. · This paper size is applicable to the China National Standards (CNS) Λ4 specification! + 2: 〇 × 297 mm *: " " Deng Shi: " • ^ 龙 妁 ·-^ · -1 · ^ 5 Printed by a co-operative cooperative 42274 5 V. Description of the invention (7) Cleaning solution and power supply, in comparison, the cost of cleaning the wafer 2 per conventional technique is about 1.65 times of the present invention; and the cleaning method of the present invention Can process wafers 2 after WCMP process, but the soft brush 1 of the conventional technology cannot be achieved. In addition, the conventional technology must continuously supply deionized water, which requires an average of 4 gallons per minute, which is comparable to the present invention. Waste β In summary, the present invention can significantly improve the cleaning effect The yield of wafer 2 can be significantly increased in the speed of cleaning, which can effectively reduce the cost of cleaning. At the same time, it can be applied to different CMP processes. It is sufficient to meet the requirements of the invention patent. Application, I would like to ask your reviewing committee to review and grant the patent as a prayer. Of course, the above is only a preferred embodiment of the present invention, and it should not be used to limit the scope of implementation of the present invention. Any modification made by those skilled in the art without departing from the spirit of the present invention shall belong to the present invention. Therefore, the protection scope of the present invention should be based on the scope of patent application described below. (Please read the "Impact Matters" on the back and fill out this page)
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