TW417389B - Infrared filterless pixel structure - Google Patents
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14645—Colour imagers
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- H01L27/144—Devices controlled by radiation
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Abstract
Description
417339 五、發明說明（1) 發明背景 (1 )發明範！fl 詳言之是有關一影像系統中 本發明係有關於影像系統 之像素結構。 相關技藝之說明 影像感測裝置的一般特徵是影像系統中之光谓測元件。 例如，一種攝影機中之影像感應裴置利用投射光擷取一麥 像以便於取代傳統使用軟片的系統。攝影機中之影像感應^ 裝置被組態利用電荷耦合裝置（CCD)技術或場效電晶體。 (FET)雙極接面電晶體（BJT)、二極體裝置或以互補金氧 半導體（CMOS)裝置製造之光阻以擷取單色或彩色影像。 内建CCD的影像系統或利用CMOS設計之影像感應器通常 需要一红外線（I R)濾波器當作光學系統的一部分。此需求 的出現是因為大部分共用半導體影像感應裝置不但對可見 光（大約380至780奈米）有反應，也對大約78〇至11〇〇奈东 範圍之紅外線光有反應。如果沒有一 I R濾波器，想要得到 一南品質的彩色影像貫際上是不可能的’因為紅外線信號 的效應會破壞影像。單色影像亦需要一 I R濾波器以正破地 保持感應亮度》 傳統地，一 I R滤波器被併入影像糸統中且是光路徑之一 部分（即除了影像感應裝置之外光學系統令之某處）或重疊 於透鏡或介於其他光學元件之内。包含一分離遽波器之 缺點是它增加了成本（IRi慮波器的成本大約在美金元 至1. 00元之間）且對整個系統計算它算是多出的元件，即417339 V. Description of the invention (1) Background of the invention (1) Range of invention! fl More specifically, the present invention relates to the pixel structure of an imaging system. Description of Related Techniques A general feature of an image sensing device is a light sensor in an imaging system. For example, an image sensor in a camera uses a projected light to capture a wheat image in order to replace the traditional film-based system. The image sensing device in the camera is configured to use charge coupled device (CCD) technology or field effect transistors. (FET) Bipolar Junction Transistor (BJT), diode device, or photoresistor fabricated with complementary metal-oxide-semiconductor (CMOS) device to capture monochrome or color images. An imaging system with a built-in CCD or an image sensor designed with CMOS usually requires an infrared (IR) filter as part of the optical system. This demand arises because most shared semiconductor image sensing devices respond not only to visible light (approximately 380 to 780 nanometers), but also to infrared light in the range of approximately 78 to 1100 nanometers. Without an IR filter, it is not possible to obtain a color image with a South quality, because the effect of the infrared signal will destroy the image. Monochromatic images also require an IR filter to maintain the induced brightness. Traditionally, an IR filter is incorporated into the image system and is part of the light path (that is, the optical system At) or overlapped within the lens or between other optical elements. The disadvantage of including a separate wave filter is that it increases the cost (the cost of the IRi filter is between about US $ 1 and $ 1.00) and it is an extra component calculated for the entire system, that is,
O:\59\59110.PTD 第4頁 五、發明說明（2) 片部分計算。而且，包含外加元件必須被融合於影像系統 之設計中，因此當各I R濾波器必須組合進入影像系統中， 增加了額外的複雜度及成本。然而，根據放置I R濾波器的 位置，影像系統的大小將被改變，進一步增加影像系統的 成本。系統軟體及信號處理亦必須被調整以適合I R濾波器 的彩色效能特性。此外，例如如果將I R濾波器設置在前透 鏡中，則I R濾波器被暴露於環境中且會有被環境損壞的危 險，諸如被濕氣損壞或刮傷。 然而另一個將I R濾波器使用於影像系統中之考慮是信號 之損失。當I R濾波器典型地通過可見光頻譜中大約只有8 0 至9 0%之光時，利用這些濾波器減少影像系統之整體信號 雜信比。因此，一具有I R濾波器之影像系統，其具有一較 低信號雜信比，將產生一較低品質影像，與具有一較高信 號雜信比之影像系統相反。 我們想要提供一種影像系統，其利用影像感應器且不需 要使用一 I R濾波器消除紅外線光之效應，藉此除去額外的 成本及因外加額外元件所引起整個系統之複雜屢= 發明摘要 一種用於提供對應事件光之感應信號之像素結構=該像 素結構包含光選擇元件，該光選擇元件具有預定厚度以只 吸收具有對應光譜可視區域波長之光線。 附圖摘要說明 本發明的功能、目的及優點將經由下列的詳細說明、申 請專利範圍及附圖便得更清楚明白，其中：O: \ 59 \ 59110.PTD Page 4 5. Description of the invention (2) Partial calculation. Moreover, the inclusion of external components must be integrated into the design of the imaging system. Therefore, when each IR filter must be combined into the imaging system, additional complexity and cost are added. However, depending on where the IR filter is placed, the size of the imaging system will be changed, further increasing the cost of the imaging system. The system software and signal processing must also be adjusted to suit the color performance characteristics of the IR filter. In addition, if the IR filter is set in the front lens, for example, the IR filter is exposed to the environment and there is a risk of being damaged by the environment, such as being damaged or scratched by moisture. However, another consideration in using IR filters in imaging systems is the loss of the signal. When IR filters typically pass only about 80 to 90% of the light in the visible spectrum, these filters are used to reduce the overall signal-to-noise ratio of the imaging system. Therefore, an imaging system with an IR filter, which has a lower signal to noise ratio, will produce a lower quality image, as opposed to an image system with a higher signal to noise ratio. We want to provide an image system that uses an image sensor and eliminates the need for an IR filter to eliminate the effect of infrared light, thereby eliminating additional costs and the complexity of the entire system caused by the addition of additional components. A pixel structure that provides a sensing signal corresponding to the event light = the pixel structure includes a light selection element having a predetermined thickness to absorb only light having a wavelength corresponding to the visible region of the spectrum. BRIEF DESCRIPTION OF THE DRAWINGS The functions, objects, and advantages of the present invention will be more clearly understood through the following detailed description, the scope of patent application, and the drawings, among which:
五、發明說明（3) 圊1顯示一數位攝影機内所發現傳統數位影像系統之組 件方塊圖； 圖2顯示一傳統紅綠藍（RG B )彩色濾波器陣列（CF A )材料 之透射特性； 圖3顯示一利用包含I R濾波器及典型感應器響應特性之 傳統RGB CFA材料之攝影機系統之相關響應特性； 圖4顯示根據本發明一實施例之一影像系統之組件方塊 圖； 圖5顯示根據本發明一實施例之一影像感應裝置之像素 結構； 圖6顯示在C Μ 0 S像素控制電路上所形成之圖5像素結構之 細部截面-圖； 圖7顯示具有800埃（^ )之ΙΤΟ層及0.25毫米（μιπ)之二極 體層之氧化錫銦（I TO)覆蓋針腳二極體之預定吸收特性； 圖8顯示根據本發明一實施例具有8 0 0埃（^ )之I T 0層及 0·2ϋ毫米（"m)之二極體層之IT0覆蓋針腳二極體之預定吸 收特性； _ 圖9顯示一根據本發明一實施例具有多個獨立像素結構 之影像感應裝置陣列；及 圖1 0顯示合併一具有多個根據本發明獨立像素結構之影 像感應裝置陣列之影像系統。 發明之詳細說明 本發明是有關一影像系統之像素結構，其不需要使用I R 瀘波器。在下列的說明中，許多特定的細節被提出為的是5. Description of the invention (3) 圊 1 shows a block diagram of components of a traditional digital imaging system found in a digital camera; Figure 2 shows the transmission characteristics of a traditional red-green-blue (RG B) color filter array (CF A) material; FIG. 3 shows the relevant response characteristics of a camera system using a conventional RGB CFA material including IR filters and typical sensor response characteristics; FIG. 4 shows a block diagram of components of an imaging system according to an embodiment of the present invention; Pixel structure of an image sensing device according to an embodiment of the present invention; FIG. 6 shows a detailed cross-sectional view of the pixel structure of FIG. 5 formed on a CMOS pixel control circuit; and FIG. 7 shows ITO with 800 angstroms (^). Layer and 0.25 mm (μιπ) diode layer of indium tin oxide (I TO) cover the predetermined absorption characteristics of the pin diode; FIG. 8 shows an IT 0 layer with 800 angstroms (^) according to an embodiment of the present invention And IT0 of the 0.2-mm dipole layer covers the predetermined absorption characteristics of the pin diode; _ FIG. 9 shows an image sensing device array with multiple independent pixel structures according to an embodiment of the present invention ; And FIG. 10 show a combined system having a plurality of video image sensing device array according to the pixel structure of independent Movies present invention. Detailed Description of the Invention The present invention relates to the pixel structure of an imaging system, which does not require the use of an IR chirper. In the following description, many specific details are proposed as
提供讓大家能完全了解本發明。然而，明顯地這些特定％ 節對精通此技藝者實行本發明是不—定需要被利用的。在 其他例子中，知名的材料或方法在此不多加詳述為的是避 免不必要的混淆本發明。 如同在本發明背景之陳述，影像感應裝置是偵測器’其 將光線2光子轉換成電子從光學影像建立影像場景。典型 地，k疋種影像感應器，其使用互補金氧半導體 或電柄合裝置（c C D )技術被生產。影像感應器是由許多個 像素所形成，例如，640欄乘48 0列之像素，其中各像素都 能吸收光。影像感應器利用將事件光擷取光學影像棋格化 成二為陣列之圖片光能被轉換成電荷。根據影像感應哭 之架構，這些像素被"定址"以將轉換電荷讀取出影像感二 器。一些影像感應器使用一二極體當成影像感應器中^ 光元件。典型地，這些二極體被整合aCM〇s電路或可以利 用傳統沉積技術被做在CMOS電路的頂端。 值得注意的是，處理步驟及結構如下文說明，不形成一 完整的製造影像系統之處理流程。本發明可以結合‘今使 用於此技藝中之技術實現，且只有一些通常地^ ^處理步 驟以允許本發明被了解s 圖1顯示數位攝影機中典型影像系統元件之方塊圖。感 應器1 1 0包含二極體1 2 〇及CM 0S影像控制電路1 〇 〇。二極體 120典型被製作於CMOS影像控制電路100之頂端。覆蓋在二 極體1 2 0上的是一色彩過濾陣列（C F A ) 1 4 0。通常，[ρ a 1 4 0 是由三個或更多個色彩通道所組成，其各自導通可見光頻Provided so that everyone can fully understand the invention. However, it is clear that these particular sections are not necessarily for those skilled in the art to practice the invention-they need to be utilized. In other instances, well-known materials or methods are not described in detail herein to avoid unnecessarily obscuring the invention. As stated in the background of the present invention, the image sensing device is a detector 'which converts light 2 photons into electrons to create an image scene from an optical image. Typically, a k-type image sensor is produced using complementary metal-oxide-semiconductor or electric handle (c C D) technology. An image sensor is formed by many pixels, for example, 640 columns by 480 columns, each of which can absorb light. The image sensor converts the optical image captured by the event light into a two-dimensional array. The light energy is converted into electric charge. According to the image sensing architecture, these pixels are "addressed" to read the converted charge out of the image sensor. Some image sensors use a diode as the light element in the image sensor. Typically, these diodes are integrated with aCMos circuits or can be made on top of CMOS circuits using conventional deposition techniques. It is worth noting that the processing steps and structure are as described below, and do not form a complete processing flow for manufacturing an imaging system. The present invention can be implemented in conjunction with the technology currently used in this technology, and there are only some common processing steps to allow the present invention to be understood. FIG. 1 shows a block diagram of typical imaging system components in a digital camera. The sensor 1 10 includes a diode 12 and a CM 0S image control circuit 100. The diode 120 is typically fabricated on the top of the CMOS image control circuit 100. Overlying the diode 1 2 0 is a color filter array (C F A) 1 4 0. In general, [ρ a 1 4 0 is composed of three or more color channels, each of which conducts the visible light frequency
HI f 〇 0 ^ 五、發明說明（5) ^ - 譜之不同部分且因此限制入射在二極體1 20上之光線\ \ 無一光選擇元件或IR濾波器160，CF A 140不但將導通 < 搜： ' > -S道選 光也導通紅外光至二極體120。CFA 140之色彩過濾遇 ，； 擇性地允許對應預定範圍可見光譜之光線通過一通I ! i極體120。因此1 CFA 140允許具有影像場景之彩色内分 ： 捅常 ：光線被對應攝影機色彩通道裝置之適當的操作估計。 黃 使用於色彩設計包含紅綠藍（RGB)、青紅黃（CMY)及青紅汽I I綠（CMYG)。例如，一種RGB系統將人類眼晴可見光譜之 ' 圍（大約4 0 0 - 7 0 0奈米）依據它們的波長分隔成三種顏色 i 紅、綠或藍；慮波器各讓大約三分之一有效可見光通過共/ j ί色通道°因此，各顏色通道會忽略來自影像場景有效光之| 三分之二的光子。 丨 圖2表示傳統R G B C F Α之透射特性。傳送性ί代表光之元 全傳送’而且傳送性0代表光之零傳送。如上文所提及 丨 的，紅、綠及藍慮波器材料在它們之間橫跨可見光譜 丨 大約4 0 0 - 7 0 0奈米，具有不同的傳送特性。該圖顯系，具j 有大約6 0 0奈米峰值傳送之紅色CFA材料（R),即紅色CFA材| 料（R)讓大約90%波長600 ηιη以上之光通過；_具有大約550 : 奈米峰值傳送之綠色CFA材料（G)，即綠色材料（G)讓大 約7D%波長55 0㈣以上之光通過；及一具有大約45〇条米峰 值傳送之監色C F A材料（B )，即藍色c F A材料（β )讓大約7 5 % j 波長4 5 0 n in以上之光通過。 圖3表不利用具有丨R濾波器的傳統rgb a材料之攝影系 統之R應特性及典型的感應器回應特性。當圖2被考慮成丨HI f 〇0 ^ V. Description of the invention (5) ^-Different parts of the spectrum and therefore limit the light incident on diode 1 20 \ Without a light selection element or IR filter 160, CF A 140 will not only conduct < Search: '> -S channel selection light also conducts infrared light to diode 120. The color filter of CFA 140 meets the requirement of selectively allowing light rays corresponding to a predetermined range of the visible spectrum to pass through an I! I polar body 120. Therefore, 1 CFA 140 allows color internal division of the image scene: Normal: Light is estimated by appropriate operation of the corresponding color channel device of the camera. Yellow is used in color designs including red, green and blue (RGB), cyan, red and yellow (CMY), and cyan, red and green (CMYG). For example, an RGB system divides the range of the visible spectrum of human eyes (approximately 400-700 nanometers) into three colors, i.e., red, green, or blue, according to their wavelengths; An effective visible light passes through the common / j color channels. Therefore, each color channel ignores two-thirds of the photons from the effective light in the image scene.丨 Figure 2 shows the transmission characteristics of conventional R G B C F Α. Transmittance ί represents the full transmission of the element of light 'and transmittance 0 represents the zero transmission of the light. As mentioned above, the red, green, and blue wave filter materials span the visible spectrum between them, and have different transmission characteristics. The figure shows that the red CFA material (R) with a peak transmission of about 600 nanometers, that is, the red CFA material | material (R) allows about 90% of the light having a wavelength of 600 nm or more to pass through; _ has about 550: The green CFA material (G) transmitted by the nanometer peak, that is, the green material (G) passes about 7D% light having a wavelength of 5500 ㈣ or more; and a monitor color CFA material (B) having a peak transmission of about 45 meters, that The blue c FA material (β) allows approximately 75% j light with a wavelength of more than 450 n in. Figure 3 shows the R response characteristics and typical sensor response characteristics of a photographic system that does not use traditional rgb a materials with R filters. When Figure 2 is considered as
417389 五、發明說明（6) 利用隔離的濾波器材料之顏色通道時，圖3以攝影機系統 當成整個之觀點注視於顏色通道。圖3顯示在結合具有感 應器響應之CFA材料特性及涉及用來將比大約nm長之 波長截止之紅外線濾波器特性之後的三個攝影機顏色通道 之相關響應特性。 如在發明背景中所提出的’本發明影像感應裝置之設計 優點是它減少整個攝影機系統的組件數量，因為不需要I ^ 濾波器元件。圖4顯示圖1影像系統之根據本發明一實施例 之組件的方塊圖’包含CMOS影像控制電路400、二極體42〇 及CFA 440 ’但沒有〖R;慮波器。如上文所提出，包含一 ir 滤波？！的缺點包含額外的成本且會複雜化影像系統。 如所述提供用於擷取可見光但限制I R光進入影像感應器 且產生高品質影像之影像系統’本發明實現此而不需要使 用IR濾波器。藉由利用具有唯一光吸收特性之像素結構之 層及調整這些層至預定厚度’本發明之像素結構讓I r波長 通過或反射而在可見光譜之想要的波長在二極體42 0中被 吸收。 圖5顯示根據本發明之一實施例之影像感應裝置之像素 結構500。像素結構500包含二極體510 '頂端傳導層550及 底端傳導層5 60之像素結構5 00被建立在CMOS影像控制電路 580上方。二極體510可以是任何光感應元件且可以由多形 矽或碲化鎘所形成。二極體510以傳統沉積方式被形成在 CMOS影像控制電路580，諸如原生質增強化學蒸氣沉積 (PECVD)。沉積溫度不超過CMOS影像控制電路58 0之溫度許417389 V. Description of the invention (6) When using the color channel of the isolated filter material, Fig. 3 looks at the color channel from the viewpoint of the camera system as a whole. Figure 3 shows the relative response characteristics of three camera color channels after combining the characteristics of a CFA material with a sensor response and the characteristics of an infrared filter involved in cutting off wavelengths longer than approximately nm. An advantage of the design of the image sensing device of the present invention as proposed in the background of the invention is that it reduces the number of components of the entire camera system because no filter element is needed. FIG. 4 shows a block diagram of components of the image system of FIG. 1 according to an embodiment of the present invention, including a CMOS image control circuit 400, a diode 42o, and a CFA 440 ', but without a wave filter. As mentioned above, does it include an ir filter? !! Disadvantages include additional costs and can complicate the imaging system. Provided as described is an imaging system for capturing visible light but restricting IR light from entering the image sensor and producing high-quality images. The present invention accomplishes this without using an IR filter. By using the layers of the pixel structure with unique light absorption characteristics and adjusting these layers to a predetermined thickness, the pixel structure of the present invention allows the Ir wavelength to pass or reflect to a desired wavelength in the visible spectrum in the diode 420. absorb. FIG. 5 shows a pixel structure 500 of an image sensing device according to an embodiment of the present invention. The pixel structure 500 includes a diode 510 ′ and a top conductive layer 550 and a bottom conductive layer 5 60. The pixel structure 500 is built on the CMOS image control circuit 580. The diode 510 may be any light-sensing element and may be formed of polymorphic silicon or cadmium telluride. The diode 510 is formed on the CMOS image control circuit 580 by a conventional deposition method, such as protoplast enhanced chemical vapor deposition (PECVD). Deposition temperature does not exceed the temperature of CMOS image control circuit 580
O:\59\59ilO.FID 第 9 頁 五、發明說明（7) 可。否則’ CMOS影像控制電路580之結構會被破壞。 在本發明中之一實施例中，二極體510是一種標準的多 形石夕接腳二極體且是以一 Ρ型氫化多形矽（a Si : Η)之薄層 520接著一本質a-Si :Η之厚層53〇及一a_Si :Η之薄η型層 5 4 0。本質層5 3 0吸收入射的光且將它們轉換成電子電洞 對。本質層530的厚度可以在〇1 至i 範圍之間。在 本，明之一實施例中，本質層53〇的厚度為〇. 23 ，為 =是聚集所有的入射光。p型層52〇及n型層54〇被製成足夠 4，以致偏壓可以建立跨越本質層53〇。卩型層52〇及η型層 540各自具有5 nm至20 nm範圍之厚度及5 nm至4〇㈣。在 本發明一實施例中，P型層520及n型層540的厚度各為10 ⑽及20 nm。因為p型層52〇具有一高片電阻，具有低片電 阻之第一導體材料55〇有需要作用如頂端接地。因為第一 導體材料5 5 0是以上述二極體51〇所形成，第一導體材料 容許光穿透至二極體510且。第一導體材料㈣亦 ’’、、 以將p型層52〇接地。導體材料可以是氧化辞 錫（IT0)。第一傳導層55〇的厚度在5〇至2㈣nm範圍之 可以用傳統沉積或喷麗技術形成於 =ί)包含Λ屬接導，之第—傳導層56°接觸心二 一 ，、連接至CMOS影像控制電路580。管道57(1 傳統方法形成…如紹⑴)或銅(Cu) 心:0:: CMOS影像控制電路58〇接觸。 Μ㈣填滿且與 圖6顯不根據本發明一實施例形成於影像控制電路O: \ 59 \ 59ilO.FID page 9 5. Description of the invention (7) Yes. Otherwise, the structure of the 'CMOS image control circuit 580 may be damaged. In one embodiment of the present invention, the diode 510 is a standard polymorphic stone-pin diode and is a thin layer 520 of a P-type hydrogenated polysilicon (a Si: 接着) followed by an essence. The a-Si: rhenium thick layer 53 and the a-Si: rhenium thin n-type layer 5 4 0. The essential layer 5 3 0 absorbs incident light and converts them into electron hole pairs. The thickness of the intrinsic layer 530 may be in the range of 0 to i. In one embodiment of the present invention, the thickness of the intrinsic layer 53 is 0.23, which is the concentration of all incident light. The p-type layer 52 and the n-type layer 54 are made enough so that a bias voltage can be established across the intrinsic layer 53. The y-type layer 52o and the n-type layer 540 each have a thickness in the range of 5 nm to 20 nm and 5 nm to 40 nm. In one embodiment of the present invention, the thicknesses of the P-type layer 520 and the n-type layer 540 are 10 ⑽ and 20 nm, respectively. Since the p-type layer 52 has a high sheet resistance, the first conductive material 55 having a low sheet resistance has a function such as grounding at the top. Since the first conductive material 5 50 is formed by the above-mentioned diode 510, the first conductive material allows light to penetrate to the diode 510 and. The first conductor material is also grounded to ground the p-type layer 52. The conductor material may be tin oxide (IT0). The thickness of the first conductive layer 55 is in the range of 50 to 2 μm. It can be formed by traditional deposition or spraying technology. The first conductive layer includes a Δ-type conductive layer, the first conductive layer 56 ° contact center 21, is connected to the CMOS Image control circuit 580. Pipe 57 (1 formed by traditional methods ... such as Shao Yu) or copper (Cu) core: 0 :: CMOS image control circuit 58. Μ㈣ is filled and shown in FIG. 6 is not formed in the image control circuit according to an embodiment of the present invention
O:\59\59110.PTD 第10頁 五、發明說明（8) 〜-- 頂端之圖5像素結構之詳細截面圖。像素結構6〇〇包含π〇 層 610、Ρ 型a-Si:H^20、原生質a_Si:H^3〇、_a_Si:O: \ 59 \ 59110.PTD Page 10 V. Description of the Invention (8) ~ --- The detailed cross-sectional view of the pixel structure in Figure 5 at the top. The pixel structure 600 includes a π layer 610, a P-type a-Si: H ^ 20, a protoplasm a_Si: H ^ 3〇, _a_Si:
Η層64 0及傳導層650。像素結構6〇〇形成於CM〇s影像控制電 路691上方且經由管道66 0與金屬67〇連接。金屬67〇與接點 661 連接。夾層電介體（interlayeF ILD) 68 0及6 9 0形成於CMOS影像控制電路691上方以阻隔傳 導層65 0與金屬6 70。本發明一實施例中，CM〇s影像控制電 路691包含形成於氧化閘極6 93上方之多形矽閘極6 9 2。The ytterbium layer 640 and the conductive layer 650. The pixel structure 600 is formed above the CMOS image control circuit 691 and is connected to the metal 67 through a pipe 660. A metal 67 ° is connected to the contact 661. Interlayere ILDs 68 0 and 690 are formed over the CMOS image control circuit 691 to block the conductive layer 65 0 and the metal 6 70. In one embodiment of the present invention, the CMOS image control circuit 691 includes a poly-shaped silicon gate 692 formed above the oxide gate 693.
CMOS影像控制電路691之源極及汲極是在p井中所形成之N 型。 本發明之像素結構不只擷取彩色影像，利用内建於像素 結構之特性，而且讓IR光通過。因此’本發明排除在一影 像系統中使用獨立IR遽波器之需求。這是藉由調整多形石夕 接腳二極體5 10(分割成p型層5 2 0、原生質 54〇)及ITG傳導層52ϋ之厚度來達成，以至於當再可 中想要波長被吸收時，對應紅外線範圍之光範圍將讓像素 結構5 0 0導通或反射。 二極體5 10 例如’如果想要只吸收可見光譜之藍色光 及ΙΤ0傳導層550之厚度可以調整至預定厚度，只有讓具有 峰值吸收在大約45 0 nm，對應至藍色光之光線將被吸^。 波長比藍、綠光長之光線，諸如那些對應至紅光及紅外光 線之光線將導通或反射像素結構。更進一步，如果想要吸 收藍光、綠光，且波長比紅光長，則二極體5丨〇及〗τ〇傳導 層5 5 0可以更薄亦吸收上至具有自大約45〇咖至55〇 _峰The source and drain of the CMOS image control circuit 691 are N-type formed in a p-well. The pixel structure of the present invention not only captures a color image, utilizes the characteristics built in the pixel structure, but also allows IR light to pass through. Therefore, the present invention eliminates the need to use a standalone IR chirper in an imaging system. This is achieved by adjusting the thickness of the polymorphic stone pin diode 5 10 (divided into p-type layer 5 2 0, protoplasm 54 0) and the thickness of the ITG conductive layer 52ϋ, so that when the wavelength is re-available When absorbing, the light range corresponding to the infrared range will make the pixel structure 500 conductive or reflective. Diode 5 10 For example, 'If you want to absorb only the blue light in the visible spectrum and the thickness of the ITO 0 conductive layer 550, you can adjust to a predetermined thickness, and only let the peak absorption at about 45 0 nm, the light corresponding to blue light will be absorbed ^. Light with a longer wavelength than blue and green light, such as those corresponding to red and infrared light, will conduct or reflect the pixel structure. Furthermore, if it is desired to absorb blue and green light, and the wavelength is longer than red light, the diode 5 丨 〇 and τ〇 conductive layer 5 50 can be thinner and absorb up to from about 45 to 55 〇_peak
417389 五、發明說明（9) 值吸收之紅色波長。波長比紅色光長之光線，諸如對應紅' 外光線之光將不會被吸收，但將立刻通導通或反射像素結i 構s 於是，藉由具有單一光線吸收特性像素結構之層級調整 這些層至預定厚度之利用，本發明吸收可見光譜由想要的丨417389 V. Description of the invention (9) The red wavelength of the absorption value. Light with a wavelength longer than red light, such as the light corresponding to the red outer light will not be absorbed, but will immediately turn on or reflect the pixel structure i. Therefore, these layers are adjusted by the level of the pixel structure with a single light absorption characteristic Utilizing to a predetermined thickness, the present invention absorbs the visible spectrum from the desired 丨
! I 波長（藍、綠及紅光），但在紅外光線之波長江被載止。本： ；發明之像素結構有效地防止紅外線光進入影像感應器，因 丨 :此並不需要IR濾波器。 ； 本發明像素結構之吸收特性可以經由模擬被證明。模擬 ； 中，已經顯示吸收特性會因為像素結構可能層特性之作用 I及改變層厚度而改變。 丨 i 表1顯示光之截止波長（定義成等於50%峰值吸收之吸收 | 能階）當作[T 0及a- S i ·. Η二極體模擬所產生厚度之作用。相； ；信只有可忽略量的光線在截止波長之上被吸收。 丨 ITO厚度(λ) a-Si:H二極體厚度 (um) 戴止波長(nm) 600 0.25 748.62 400 0.25 I 733.49 800 0.25 /znr\ ί λ 758.78 c A〇 i 600 I 0.20 | 735.98 400 0.20 721.15 800 0.20 745.86 圖腳 接 之 光 見 可 及 光 外 紅 中 統 Ν糸 J— 表像 影 測 偵 要 想 示 顯 蓋 覆 之 ο 性度 特厚 收一 吸及 之層 體To 極 有 具 體 極二 腳 接 蓋 覆 當 ο 層 體 極二 之 π1 度做 厚層! I wavelength (blue, green, and red light), but stopped at the wavelength of infrared light. This: The invented pixel structure effectively prevents infrared light from entering the image sensor, because IR filters are not needed for this. The absorption characteristics of the pixel structure of the present invention can be proved through simulation. In the simulation, it has been shown that the absorption characteristics will be changed due to the effect of possible layer characteristics of the pixel structure I and changing the layer thickness.丨 i Table 1 shows the cut-off wavelength of light (defined as the absorption equal to 50% of the peak absorption | energy level) as a function of the thickness produced by [T 0 and a-S i ·. Η diode simulation. Phase; letter Only a negligible amount of light is absorbed above the cutoff wavelength.丨 ITO thickness (λ) a-Si: H diode thickness (um) Wear-stop wavelength (nm) 600 0.25 748.62 400 0.25 I 733.49 800 0.25 / znr \ ί λ 758.78 c A〇i 600 I 0.20 | 735.98 400 0.20 721.15 800 0.20 745.86 The light connected to the figure can be seen. The light red central system N 糸 J—The appearance and shadow detection should show the coverage. The thickness is extremely thick. The layered body is very specific. The two feet are connected to cover ο π1 degree of the second pole of the layer body to make a thick layer
在 1 7 3 8 3 .五、發明說明（10) :成8 0 0 /\厚且多形矽二極體層（分割成p型層、原生質層及τι !型層）做成0.25 "m厚時，模擬顯示超過50%吸收率，具有| ：自大約450至600峰值吸收，其各自對應藍、綠及紅光之光' 線將被IT0覆蓋接腳二極體吸收。然而，上至85 0 nm附 ！ 近，對應至紅外光區域（7 8 0 - 1 1 0 0 n m)之光線將被吸收。 | 圖8顯示想要偵測影像系統中可見光但不偵測紅外光之 IT 0覆蓋接腳二極體之吸收特性。本發明之一實施例中， | | ITO覆蓋接腳二極體具有一厚度800人之ITO層及一厚度 i 0.20 y m之二極體。藉由將多形矽二極體層（分割成p型 層、原生質層及η型層）之厚度自圖6之0. 25 //m減少至0.2 ! | A m及將ΙΤΟ層厚度保持在8 0 0人，模擬顯示超過50%吸收 率’上至大約79 0 nm對應紅外光之光線被吸收但是將導通| '像素結構或被反射。此顯示於圖8之本發明像素結構之吸 | 丨收特性趨近於典型IR濾波器之吸收特性。 本發明之一優點是可見光感受性自調整過程引起之任何 妥協被以增加信號補償，因為不需要一 IR濾波器。如發明i :为景中所提及，I R濾波器之加入會減低整體系統之信號雜丨 ， i :訊比，因為該濾波器典型地讓可見光譜中大約8 〇〜9 〇 %之光| 線通過。本發明中，利用I r濾波器元件，提昇至1 〇 〇 %，取 代原先讓可見光譜中8 0 ~ 9 0 %之光線通過以比傳統需要之影： 丨像系統產生較高品質之影像。 i ! 本發明的另外一個優點是藉由不需要額外的元件，達到 I —種象徵利益效應。因為攝影機系統之純淨影像品質是根 ：據獨立的元件’諸如光學、IR濾波器、色濾波器陣列In 1 7 3 8 3. V. Description of the invention (10): 80 0 // thick and polymorphic silicon diode layer (divided into p-type layer, protoplast layer and τι! -Type layer) is made 0.25 " m When it is thick, the simulation shows an absorption rate of more than 50%, with |: peak absorption from about 450 to 600, and their respective light 'lines corresponding to blue, green, and red light will be absorbed by the IT0-covered diode. However, up to 85 0 nm attached! Nearly, the light corresponding to the infrared light region (780-110 nm) will be absorbed. Figure 8 shows the absorption characteristics of IT 0 overlay pin diodes that want to detect visible light but not infrared light in the imaging system. In one embodiment of the present invention, the | | ITO covering pin diode has an ITO layer with a thickness of 800 people and a diode with a thickness of i 0.20 y m. By reducing the thickness of the polymorphic silicon diode layer (divided into p-type layer, protoplast layer and η-type layer) from 0.25 // m in Fig. 6 to 0.2! | A m and keeping the thickness of the ITO layer at 8 0 0 people, the simulation shows that more than 50% of the absorption rate 'up to about 79 0 nm corresponding to the infrared light is absorbed but will be turned on |' pixel structure or reflected. This is shown in FIG. 8. The absorption characteristic of the pixel structure of the present invention approaches the absorption characteristic of a typical IR filter. An advantage of the present invention is that any compromises caused by the visible light sensitivity self-adjusting process are added to increase signal compensation because an IR filter is not required. As the invention i: mentioned in the scene, the addition of the IR filter will reduce the signal noise of the overall system, i: the signal ratio, because this filter typically allows about 80% to 90% of the light in the visible spectrum | The line passes. In the present invention, the Ir filter element is used to increase it to 100%, instead of allowing 80 to 90% of the light in the visible spectrum to pass through before the traditionally required shadow: The image system produces a higher-quality image. i! Another advantage of the present invention is that it achieves a kind of symbolic benefit effect by not requiring additional components. Because the pure image quality of the camera system is rooted: according to independent components ’such as optics, IR filters, color filter arrays
第13頁 4 [7 3 8 9 五、發明說明（π) (CFA)及感應器，這些各自獨立的元件已經内建容許量， 其在合計量中影響最後影像。利用省略IR濾波器元件及它： 的相關變化，測量或測試與該元件相關之需求可以減少或 省略。 丨 圖9顯示根據本發明一實施例之影像感應裝置陣列，其 具有多個獨立的像素結構。圖9顯示一像素結構9 0 0 ，其包1 含ΙΤΟ 層 910、ρ 型a-Si:H 層 920、原生質 a-Si:H 層 930、η 型： a-Si:H層940、偏壓電極950及影像控制電路960。 i 上面的討論集中於包括I R選擇元件或濾波器使用於影像 感應系統中，諸如攝影機。通常，該影像感應裝置之應用 將搜索濾波器（反射或吸收）7 8 0 - 1 1 0 0 nm範圍中之I R光。 所幸，該元件或濾波器可以被特別的應用選擇其他波長當i 成保證且本發明不應該被限制元件的選擇至一特殊的光譜 範圍。替代地，在此所提出之原理可以被應用於包含不同I 選擇性考量之應用。 具有多個上述獨立像素結構之影像感應裝置可以使用當丨 作圖1 0中所顯示數位影像系統4 0 0之一部分。影_像系統400 具有一光學系統43 0，其引導射入能量當成在此例子中之 丨 光在影像感應裝置40 5上建立一光學影像。控制信號產生 邏輯4 i8被提供以產生重至信號及控制影像感應裝置405光i 感應器所應之字組線。輸出值（感應器信號）可以在被供給丨 類比數位A/D轉換單元41 0前以類比形式進一步處理，該單 元輪流供應數位處理方塊4 1 4。類比信號處理，A/D單元及 部分數位處理方塊可以設置於相同的晶月上當成感應器陣i 辞丨丨0 CJ ο I五、發明說明（12) 列。數位處理可以包含硬金屬線邏輯及/或一可程式化處 · 理器，其執行不同的數位功能，包含準備根據儲存或傳送； 感應器信號之數位影像資料。 影像資料至外部處理系統之傳送可以使用通訊介面424 ! 達到。例如，如一數位式攝影機，系統4 0 0將包含一通訊 丨 介面，其符合一電腦週邊匯流排標準，諸如通用串列匯流I 棑（USB)或IEEE 1 3 94- 1 9 9 5。影像系統400亦可以包含非揮| 發變動之近端儲存裝置4 28，例如一可柚換式記憶卡、一 旋轉磁碟裝置或其他適合用於數位影像資料永久不變之記1 憶裝置。系統400之操作可以由系統控制器422控制，該控丨 丨制器可以包含一執行儲存於韌體中指令之傳統微控制器。丨 前面的詳細說明中，本發明已經參考明確的實施例而被丨 說明。清楚地，可以做成不同的修正及改變而不違背本發丨 明如同附錄申請專利範圍所提出之寬廣的精神及目的。於 : 丨是，詳述及附圖將被視為一圖例說明而沒有限制的意味。iPage 13 4 [7 3 8 9 V. Description of the invention (π) (CFA) and sensor, these independent components have built-in tolerances, which affect the final image in the total measurement. By omitting the IR filter element and its related changes, the need to measure or test the element can be reduced or omitted.丨 FIG. 9 shows an image sensing device array having a plurality of independent pixel structures according to an embodiment of the present invention. FIG. 9 shows a pixel structure 9 0. The package 1 includes an ITO layer 910, a p-type a-Si: H layer 920, a prototype a-Si: H layer 930, an n-type: a-Si: H layer 940, and a bias voltage. Electrode 950 and image control circuit 960. i The discussion above focused on including IR selection elements or filters for use in image sensing systems, such as cameras. Usually, the application of this image sensing device will search for IR light in the filter (reflection or absorption) range of 7 8 0-1 1 0 0 nm. Fortunately, the element or filter can be selected by other applications as a guarantee for particular applications and the invention should not be limited to the selection of the element to a particular spectral range. Alternatively, the principles presented herein can be applied to applications that include different I-selectivity considerations. An image sensing device having multiple independent pixel structures described above can be used as part of the digital imaging system 400 shown in FIG. 10. The imaging system 400 has an optical system 430, which guides the incident energy as light in this example to create an optical image on the image sensing device 405. Control signal generation Logic 4 i8 is provided to generate the weight signal and control the word line corresponding to the light sensor of the image sensing device 405. The output value (sensor signal) can be further processed in analog form before being supplied to the analog digital A / D conversion unit 41 0, which in turn supplies digital processing blocks 4 1 4. Analog signal processing, A / D unit, and some digital processing blocks can be set on the same crystal moon as the sensor array. I 丨 丨 0 CJ ο 5. Description of invention (12) column. Digital processing can include hard-wired logic and / or a programmable processor that performs different digital functions, including digital image data ready to be stored or transmitted based on sensor signals. The transmission of image data to an external processing system can be achieved using the communication interface 424! For example, like a digital camera, the system 400 will include a communication interface that conforms to a computer peripheral bus standard, such as a universal serial bus I) (USB) or IEEE 1 3 94- 1 995. The imaging system 400 may also include a non-volatile storage device 4 28, such as a replaceable memory card, a rotating disk device, or other memory device suitable for permanently changing digital image data. The operation of the system 400 may be controlled by a system controller 422. The controller may include a conventional microcontroller that executes instructions stored in firmware.丨 In the foregoing detailed description, the present invention has been described with reference to specific embodiments. Clearly, different amendments and changes can be made without departing from the broad spirit and purpose of the present invention as set forth in the appended patent application scope. In: 丨 Yes, the detailed description and drawings are to be regarded as an illustration without limitation. i
I 因此，本發明之目的應該只有被附錄申請專利範圍限制。！I Therefore, the purpose of the present invention should be limited only by the scope of the appended patent application. !!
第15頁Page 15
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| US6211521B1 (en) * | 1998-03-13 | 2001-04-03 | Intel Corporation | Infrared pixel sensor and infrared signal correction |
| KR100417876B1 (en) * | 2002-03-11 | 2004-02-11 | 한성엘컴텍 주식회사 | Image improving apparatus of image sensor |
| US7502058B2 (en) * | 2003-06-09 | 2009-03-10 | Micron Technology, Inc. | Imager with tuned color filter |
| JP2005027033A (en) * | 2003-07-02 | 2005-01-27 | Nikon Corp | Color imaging apparatus |
| EP1677364A1 (en) * | 2004-12-30 | 2006-07-05 | St Microelectronics S.A. | Light detector formed on an integrated circuit |
| KR100670538B1 (en) * | 2004-12-30 | 2007-01-16 | 매그나칩 반도체 유한회사 | Image sensor capable of increasing optical sensitivity and method for fabrication thereof |
| JP2007081137A (en) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | Photoelectric conversion device and solid-state imaging device |
| JP2007227574A (en) * | 2006-02-22 | 2007-09-06 | Fujifilm Corp | Photoelectric conversion element, and solid-state imaging element |
| KR100863497B1 (en) * | 2007-06-19 | 2008-10-14 | 마루엘에스아이 주식회사 | Image sensing apparatus, method for processing image signal, light sensing device, control method, and pixel array |
| US20090159799A1 (en) * | 2007-12-19 | 2009-06-25 | Spectral Instruments, Inc. | Color infrared light sensor, camera, and method for capturing images |
| JP5489705B2 (en) * | 2009-12-26 | 2014-05-14 | キヤノン株式会社 | Solid-state imaging device and imaging system |
| JP2012124318A (en) * | 2010-12-08 | 2012-06-28 | Sony Corp | Method of manufacturing solid state imaging device, solid state image sensor, and electronic apparatus |
| JP2013016729A (en) * | 2011-07-06 | 2013-01-24 | Sony Corp | Solid state image pickup device and electronic apparatus |
| TWI505455B (en) * | 2013-09-27 | 2015-10-21 | Maxchip Electronics Corp | Light sensor |
| US20160255323A1 (en) | 2015-02-26 | 2016-09-01 | Dual Aperture International Co. Ltd. | Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling |
| US10985203B2 (en) | 2018-10-10 | 2021-04-20 | Sensors Unlimited, Inc. | Sensors for simultaneous passive imaging and range finding |
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| US4677289A (en) * | 1984-11-12 | 1987-06-30 | Kabushiki Kaisha Toshiba | Color sensor |
| CA1269164A (en) | 1986-03-24 | 1990-05-15 | Metin Aktik | Photosensitive diode with hydrogenated amorphous silicon layer |
| GB2238427A (en) * | 1989-11-24 | 1991-05-29 | Philips Electronic Associated | Thin film diode devices and active matrix addressed display devices incorporating such |
| JPH04124883A (en) * | 1990-09-15 | 1992-04-24 | Matsushita Electric Works Ltd | Photoelectric conversion device |
| US5449923A (en) * | 1992-03-31 | 1995-09-12 | Industrial Technology Research Institute | Amorphous silicon color detector |
| JPH05343661A (en) * | 1992-06-08 | 1993-12-24 | Ricoh Co Ltd | Color optical sensor |
| JPH06181300A (en) * | 1992-12-11 | 1994-06-28 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device and manufacture thereof |
| US5643369A (en) * | 1993-06-24 | 1997-07-01 | Fuji Xerox Co., Ltd. | Photoelectric conversion element having an infrared transmissive indium-tin oxide film |
| IT1272248B (en) * | 1994-05-12 | 1997-06-16 | Univ Roma | VARIABLE SPECTRUM DETECTOR CONTROLLED IN VOLTAGE, FOR TWO-DIMENSIONAL COLOR DETECTION AND RECONSTRUCTION APPLICATIONS |
| JPH08331459A (en) * | 1995-06-02 | 1996-12-13 | Hamamatsu Photonics Kk | Solid-state image pickup device |
| DE19637126C2 (en) * | 1995-09-12 | 1999-07-22 | Markus Prof Dr Ing Boehm | Variospectral multicolor diode |
| US5671914A (en) * | 1995-11-06 | 1997-09-30 | Spire Corporation | Multi-band spectroscopic photodetector array |
| US5747863A (en) * | 1996-07-08 | 1998-05-05 | Nikon Corporation | Infrared solid-state image pickup device and infrared solid-state image pickup apparatus equipped with this device |
| JP3836911B2 (en) * | 1996-07-09 | 2006-10-25 | 浜松ホトニクス株式会社 | Solid-state imaging device |
| JP3357797B2 (en) * | 1996-09-17 | 2002-12-16 | 株式会社東芝 | Amplification type solid-state imaging device |
| JP3579194B2 (en) * | 1996-09-17 | 2004-10-20 | 株式会社東芝 | Driving method of solid-state imaging device |
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