A7 B7 經濟部智慧財產局貝工消费合作社印製 五、發明說明（/) 技術領域： 本發明是有關於一種積體電路的製造方法，特別是關 於一種利用電漿清潔旋塗式玻璃膜(spin on glass ; SOG)蝕 刻機(etch back etcher)之上電極板的方法。 發明背景： •按’旋塗式玻璃膜(SOG)是目前一種積體電路工業廣 泛地運用於層間介電層(Inter level Dielectric ; ILC)或是平坦 化（planarization)的材料。如聯華電子的美國專利第 5,449,644號和韓國現代電子美國專利第5S157,002號中都揭 露了利用旋塗式玻璃膜(SOG)製定圖案護罩(mask)，形成接 觸窗口的製程，而Pramanid等人於美國專利第5,496,774號 和Dawson於美國專利第5,503,882號，則揭露了利用旋塗式 玻璃膜(SOG)來達成積體電路元件平坦化的技術。旋塗式 ‘ 玻璃膜(SOG)通常是以旋塗的方式，來覆蓋一層液態的溶 液，再經過適當的熱處理之後，以達到使晶片表面的介電 層得以“平坦化”的目的。為了獲得更佳的平坦化功效， 尚需利用電漿對旋塗式玻璃膜(SOG)進行回蝕刻(etch back) 的步驟，以增加其對各種階梯結構的平坦化能力。因為目 前常用旋塗式玻璃膜(SOG)的材料，主要有矽酸鹽(Silicate) 和矽氧烷(Siloxane)兩種，而與其相溶的有機溶劑，主要則 是利用醇類(Alcohol)和酿I類(Ketone)。在進行旋塗式玻璃膜 • (SOG)進行回蝕刻或是圖案化的步驟時，電漿氣體會與旋 塗式玻璃膜(SOG)發生反應而產生高分子聚合物(polymer)7 堆積在蝕刻機(etcher) 1的器壁以及上電極板(cathod)3的表 2 (請先閲讀背面之ii意事項再填寫本頁) ii裝 _ n 丨！丨訂----— I! _線 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） 4»7163 A7 ------BZ____ 五、發明說明（^) 面，因此’會嚴重影響_刻機的反應速率和回餘刻 勻程度。 傳統的清潔方式必須將蝕刻機完全停機後，在以溶劑 將上電極板(cathod)表面的高分子聚合物(p〇丨卿岣除去，此 清潔過程耗時甚久，會降低半導體工廠的生產能力。於 疋，有人利用不同的蝕刻電漿氣體配方以減少高分子聚合 物(polymer)的產生(可參閱台灣積體電路製造公司(TSMC) 的美國專利第5,679,211號）❶然而，此製程僅是減少高分 子聚合物(polymer)的產生，在操作一段時間之後依舊是必 須將飯刻機完全停機後才能進行清潔的動作。 因此，本發明提供一種清潔旋塗式玻璃膜(S〇G)蝕刻 機之新方法，能夠快且經濟地清潔旋塗式玻璃膜(s〇G)银 刻機’而不會有上述之缺點。 發明之概述： 本發明之主要目的為提供一種清潔旋塗式玻璃膜(S〇G) '餘刻機的方法’能夠快且經濟地清潔旋塗式玻璃膜(SOG) 姓刻機。 本發明之次要目的為提供一種清潔旋塗式玻璃膜(S0G) 姓刻機的方法，利用含有氧氣的電漿，可以有效地去除堆 積在旋塗式玻璃膜(SOG)蝕刻機上電極板之高分子聚合 物。 本發明之另一目的為提供一種製程步驟簡單且具有高 度實用性的清潔旋塗式玻璃膜(SOG)蝕刻機方法，可以利 .用現有的生產設備下，即達到清潔旋塗式玻璃膜(SOG)蝕 3 本紙張尺度適用中國國家標準（CNS>A4規格（2J0 X 297公* ) (請先閱讀背面之注^^項再填寫本頁) i {裝---I----訂---------線 經濟部智慧財產局員工消费合作社印製 A7 A7 五 經濟部智慧財產局霣工消费合作社印製 發明說明（ 刻機的功效，減少清潔旋塗式玻璃膜(s〇G)蝕刻機的頻 率。 本發明之再一目的為提供一種清潔旋塗式玻璃膜(s〇G) 蝕刻機的方法，可以獲得較佳的蝕刻機反應速率及提昇回 餘刻的均勻程度。 本發明係利用以下的製程方式，來達成上述之種種目 的。首先，在基板上依序形成閘氧化層以及閘極層，然 後’利用微影及蝕刻技術’將所述閘氧化層以及閘極層加 以圖案化已定義出閘極結構，接著，塗佈一層旋塗式玻璃 膜(SOG)於整個基板表面’接下來，再以反應氣體為口^和 chf3等含氟氣體對所述旋塗式玻璃膜(S0G)進行回蝕刻或 是製定如接觸窗等圖案化的動作，然後，將此片完成旋塗 式玻璃膜(SOG)回蝕刻的基板移出蝕刻機，接下來則是對 下一片基板重複旋塗式玻璃膜(S〇G)回蝕刻的動作。如此 處理了約250片基板之後，即可以利用本發明所揭露的方 法清潔堆積在旋塗式玻璃膜(SOG)蝕刻機上電極板表面之 高分子聚合物，此步驟是本發明之重點所在，在蝕刻機同 一蝕刻反應室中’以包含有氧氣、氬氣以及四氟化碳(cf4) 電漿將堆積在旋塗式玻璃膜(SOG)蝕刻機上電極板表面之 高分子聚合物除去，可以經濟有效率地去除堆積在旋塗式 玻璃膜(S0G)蝕刻機上電極板表面之高分子聚合物，減少 清潔旋塗式玻璃膜(S0G)蝕刻機的頻率以及獲得較佳的蝕 刻機反應速率及提昇回蝕刻的均勻程度，進而能夠大幅提 本紙張尺度適用中0國家標準（CNS)A4規格（210 X 297公釐〉 H ^--：--Mil---^ - ---1111^-- — — —-----線 _ ./V -( (請先閲讀背面之注意事項再填寫本頁} * 417163 A7 一 -___B7__ 五、發明說明（4) 昇旋塗式玻璃膜(SOG)蝕刻機的產能以及減少生產成本。 .本發明所述清潔旋塗式玻璃膜膜蝕刻機之方法於焉完成。 圖式的簡要說明： 圖一為習知技藝高分子聚合物堆積在旋塗式玻璃膜 (SOG)钱刻機上電極板表面之示意圖。 圖二為本發明實施例清潔旋塗式玻璃膜(SOG)蝕刻機 的流程圖。 圖三為本發明實施例於基板表面形成旋塗式玻璃膜 (SOG)以進行平坦化的剖面圖。 .圖號說明： 1-#刻機 3-陰極 7-高分子聚合物 31-半導體基板 33-閘氧化層 35-閘極層 37-旋塗式玻璃膜膜 發明之詳細說明： 以下的實施例係以塗佈在複晶矽閘極的旋塗式玻璃膜 平坦化為例作說明，但本發明的製程方式亦可以用在其它 經濟部智慧財產局員工消f合作社印製 (請先閲讀背面之注意事項再填寫本頁) 線 .各種結構的圖案化或是平坦化之用，如：金屬連線或是電 容器或是接觸窗等。 β請參閱圖二，為本發明實施例之流程圖。首先，步驟 201疋先形成如圖三的結構，在基板31上依序形成閘氧化 層33以及閘極層35，然後，利用微影及關技術，將所述 閑氧化層33以及閘極層35加以圖案化已定義出閘極結構，A7 B7 Printed by the Shellfish Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (/) TECHNICAL FIELD: The present invention relates to a method for manufacturing an integrated circuit, and in particular, to a plasma-coated spin-coated glass film ( spin on glass (SOG) method of etch back etcher. BACKGROUND OF THE INVENTION: • The spin-on-glass film (SOG) is a material that is currently widely used in the integrated circuit industry for inter level dielectric (ILC) or planarization. For example, U.S. Patent No. 5,449,644 of UMC and U.S. Patent No. 5S157,002 of Hyundai Electronics both disclose the process of using a spin-on-glass film (SOG) to formulate a pattern mask to form a contact window. Pramanid In U.S. Patent No. 5,496,774 and Dawson in U.S. Patent No. 5,503,882, the techniques of using spin-on-glass film (SOG) to achieve planarization of integrated circuit elements are disclosed. Spin-coating type ‘Glass film (SOG) is usually spin-coated to cover a layer of liquid solution, and after proper heat treatment, the dielectric layer on the surface of the wafer can be“ flattened ”. In order to obtain a better planarization effect, a step of etching back the spin-on-glass film (SOG) with a plasma is needed to increase its planarization ability to various stepped structures. Because currently used spin-coated glass film (SOG) materials, there are mainly silicate (Silicate) and siloxane (Siloxane), and the organic solvents that are compatible with them mainly use alcohols (Alcohol) and Stuffed Class I (Ketone). During the spin-on glass film (SOG) etch-back or patterning step, plasma gas will react with the spin-on glass film (SOG) to generate a polymer 7 Wall of the machine (etcher) 1 and table 2 of the upper electrode plate (cathod) 3 (please read the notice on the back before filling this page) ii__ 丨!丨 Order ----— I! _ The size of the paper is applicable to the Chinese National Standard (CNS) A4 specifications < 210 X 297 mm) 4 »7163 A7 ------ BZ____ 5. Description of the invention (^) Therefore, 'will seriously affect the response rate of the _ engraving machine and the degree of back engraving uniformity. The traditional cleaning method must completely stop the etching machine, and then remove the polymer on the surface of the upper electrode plate (cathod) with a solvent. This cleaning process takes a long time and will reduce the production of the semiconductor factory. Ability. Yu Yu, some people use different etching plasma gas formulations to reduce the production of high polymer (see US Patent No. 5,679,211 for Taiwan Semiconductor Manufacturing Company (TSMC)). However, this process only It is to reduce the generation of high molecular polymer (polymer). After a period of operation, the rice carving machine must be completely stopped before cleaning can be performed. Therefore, the present invention provides a clean spin-on glass film (SOG). The new method of etching machine can quickly and economically clean the spin-coated glass film (sog) silver engraving machine without the above-mentioned disadvantages. SUMMARY OF THE INVENTION The main object of the present invention is to provide a clean spin-coated type. Glass film (SOG) The method of engraving machine can clean spin coating glass film (SOG) engraving machine quickly and economically. A secondary object of the present invention is to provide a clean spin coating glass film (SOG).The engraving method can effectively remove the polymer polymer deposited on the electrode plate on the spin-on-glass-type (SOG) etching machine by using a plasma containing oxygen. Another object of the present invention is to provide a simple and simple process step. A highly practical method for cleaning spin-on-glass film (SOG) etchers can be used. Using existing production equipment, it can achieve a clean spin-on-glass film (SOG) etch. 3 This paper applies Chinese national standards (CNS >); A4 specification (2J0 X 297 male *) (Please read the note ^^ on the back before filling this page) i {装 --- I ---- Order --------- Ministry of Economics and Wisdom Printed by the Consumer Cooperative of the Property Bureau A7 A7 Five printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, and printed by the Consumer Cooperative of the Industrial Cooperative (Effect of the engraving machine, reducing the frequency of cleaning the spin-on glass film (sog) etching machine One objective is to provide a method for cleaning a spin-on glass film (sog) etching machine, which can obtain a better etching machine reaction rate and improve the uniformity of the back-etching. The present invention uses the following process methods to achieve For the above purposes, first, A gate oxide layer and a gate layer are sequentially formed, and then the gate oxide layer and the gate layer are patterned by using lithography and etching techniques to define a gate structure. Then, a spin-on glass film is coated ( SOG) on the entire substrate surface. Next, the spin-on glass film (S0G) is etched back with a reactive gas such as ^ and fluorinated gas such as chf3, or a patterned action such as a contact window is made, and then Then, remove the substrate with the spin-coated glass film (SOG) etch back from the etching machine, and then repeat the spin-coated glass film (SOG) etch back for the next substrate. This process has about 250 After the substrate is laminated, the polymer disclosed on the surface of the electrode plate on the spin-on glass film (SOG) etching machine can be cleaned by the method disclosed in the present invention. This step is the focus of the present invention. The reaction chamber 'removes high-molecular polymers deposited on the surface of the electrode plate on the spin-on-glass-type (SOG) etching machine with a plasma containing oxygen, argon, and carbon tetrafluoride (cf4) plasma, which can be economically and efficiently Removal of deposits in spin coating Polymer on the surface of the electrode plate on the glass film (S0G) etching machine, reducing the frequency of cleaning the spin-on glass film (S0G) etching machine, obtaining a better etching machine reaction rate, and improving the uniformity of the etch back, thereby Able to significantly increase the paper size Applicable to China National Standards (CNS) A4 specifications (210 X 297 mm) H ^-: --Mil --- ^---- 1111 ^-------- -线 _ ./V-((Please read the precautions on the back before filling in this page) * 417163 A7 一 -___ B7__ V. Description of the invention (4) Production capacity of the spin-on glass film (SOG) etching machine and reduction of production cost. . The method for cleaning the spin-on glass film etching machine according to the present invention is completed in a vacuum. Brief description of the drawings: Fig. 1 is a schematic view of the surface of an electrode plate on a spin-coated glass film (SOG) money engraving machine with a polymer of a conventional technique. Fig. 2 is a flow chart of a cleaning spin-on glass film (SOG) etching machine according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of forming a spin-on-glass film (SOG) on a substrate surface for planarization according to an embodiment of the present invention. .Illustration of drawing number: 1- # 刻 机 3- Cathode 7-Polymer 31-Semiconductor substrate 33-Gate oxide layer 35-Gate layer 37-Spin-coated glass film Detailed description of the invention: The following examples The spin-coated glass film coated on the polycrystalline silicon gate is used as an example for illustration, but the process method of the present invention can also be used for printing by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. Please pay attention to this page and fill in this page again). The patterning or flattening of various structures, such as metal wiring or capacitors or contact windows. β Please refer to FIG. 2, which is a flowchart of an embodiment of the present invention. First, in step 201, a structure as shown in FIG. 3 is formed, and a gate oxide layer 33 and a gate electrode layer 35 are sequentially formed on a substrate 31. Then, using the photolithography and gate technology, the idle oxide layer 33 and the gate electrode layer are formed. 35 has been patterned to define the gate structure,
經濟部智慧財產局員工消費合作社印製 • A7 _______B7___ 五、發明說明（/) 接著’塗佈一層旋塗式玻璃膜(S〇G)37於整個基板表面， 如圖三所示。 所述基板31 ’通常是成分為硬或是神化鎵(GaAs)的半 導體晶圓，亦可為液晶顯示器(LCD)使用之玻璃面板(glass flat panel)或陶磁基板。所述閘氧化層33通常是利用熱氧化 法(thermal growth)所形成的，其厚度為1〇〇到5〇〇埃之間。 所述閘極層35通常是複晶矽，也可為含有鶴、鈦等金屬的 金屬矽化物層(silicide)。所述定義出閘極結構的步驟通常 是使用電漿钱刻方法’如：反應式活性離子姓刻(RJE)、電 子迴旋共振電漿蝕刻(ECR)或磁場増強式反應式活性離子 蝕刻(MERIE)餘刻方法’以SF6' CH4、〇2等含鹵素氣體為 反應氣體操作之。若是有需要的話’也可以先生成一層利 用大氣壓化學氣相沉積法(APCVD)形成之硼磷攙雜玻璃膜 (BPSG)於閘極結構與旋塗式玻璃膜膜(s〇〇)37之間以增加 旋塗式玻璃膜膜(SOG)37的附著能力。所述旋塗式玻璃膜 的材料通常是石夕酸鹽(Silicate)或是矽氧烧(Siloxane)，亦可 為任何型態的旋塗式玻璃膜(SOG)，其厚度為介於5000到 70000埃之間。 請繼續參閱圖二，接下來，步驟203是再以反應氣體 為CF4和CHF3等含氟氣體對所述旋塗式玻璃膜(s〇〇)37進行 回蚀刻或是製定如接觸窗等圖案化的動作。然後，將此片 完成旋塗式玻璃膜(S〇G)37回蝕刻的基板移出蝕刻機，接 下來’步驟205則是對下一片基板重複旋塗式玻璃膜 (SOG)37回蝕刻的動作。如此處理了約25〇片基板之後，即 __6 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） .--.1.----------.{裝--------訂---------線.^ (請先閲讀背面之注意事項再填寫本頁) 417163 A7 ~ - — B7 _ 五、發明說明（g) 可以利用本發明所揭露的方法清潔堆積在旋塗式玻璃膜 (SOG)蝕刻機上電極板表面之高分子聚合物。 (請先閱讀背面之注意事項再填寫本頁) ， 請繼續參閱圖二，步騾207是本發明之重點所在，在 餘刻機同一蝕刻反應室中，以包含有氧氣、氬氣以及四氟 化碳(CF4)電漿將堆積在旋塗式玻璃臈(s〇G)蝕刻機上電極 板表面之高分子聚合物除去。此步驟是在壓力大約200-400 mtorr環境下，以氧氣(〇2)的氣體流量介於30-100 sccm、 CF4的氣體流量30-1 〇〇 seem和Ar氣體流量50-200 seem之 間，進行约60-120秒，在蝕刻機不必停機的狀態下，就可 以經濟有效率地去除堆積在旋塗式玻璃膜(S〇G)蝕刻機上 ' 電極板表面之高分子聚合物，減少清潔旋塗式玻璃膜(SOG) 線 蝕刻機的頻率以及獲得較佳的蝕刻機反應速率及提昇回蝕 刻的均勻程度，進而能夠大幅提昇旋塗式玻璃膜(SOG)蝕 刻機的產能以及減少生產成本。本發明所述清潔旋塗式玻 璃膜蝕刻機之方法於焉完成。在清潔完蝕刻機之後，又可 以依照前述之步驟201至205進行下一批旋塗式玻璃膜膜 (SOG)回蝕刻的動作了。 經濟部智慧財產局男工消费合作社印裝 以上係利用最佳實施例來闡述本發明，而非限制本發 - 明，並且，熟知半導體技藝之人士皆能明瞭，適當而作微 的改變及調整，仍將不失本發明之要義所在，亦不脫離本 發明之精神和範圍。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • A7 _______B7___ V. Description of the Invention (/) Then ’coat a layer of spin-on glass film (SOG) 37 on the entire substrate surface, as shown in Figure 3. The substrate 31 ′ is generally a semiconductor wafer having a hard or GaAs composition, and may also be a glass flat panel or a ceramic magnetic substrate used in a liquid crystal display (LCD). The gate oxide layer 33 is generally formed by a thermal growth method, and has a thickness of 100 to 500 angstroms. The gate layer 35 is usually polycrystalline silicon, and may also be a metal silicide layer containing a metal such as crane or titanium. The step of defining the gate structure is usually a plasma etching method such as: reactive reactive ion etching (RJE), electron cyclotron resonance plasma etching (ECR), or magnetic field reactive reactive ion etching (MERIE ) The remainder method 'operates with a halogen-containing gas such as SF6' CH4, 〇2, and the like. If necessary ', a layer of boron-phosphorus doped glass film (BPSG) formed by atmospheric pressure chemical vapor deposition (APCVD) can also be first formed between the gate structure and the spin-on glass film (s〇〇) 37. Increase the adhesion of spin-on glass film (SOG) 37. The material of the spin-coated glass film is usually silicate or siloxane. It can also be any type of spin-coated glass film (SOG) with a thickness of 5000 to Between 70,000 Angstroms. Please continue to refer to FIG. 2. Next, step 203 is to etch back the spin-coated glass film (s〇〇) 37 with a reactive gas such as CF4 and CHF3, or formulate a pattern such as a contact window. Actions. Then, remove the substrate with 37 times of spin-on glass film (SOG) etched out of the etching machine, and the next step 205 is to repeat the operation of 37 times of spin-on glass film (SOG) etch on the next substrate . After processing about 25 substrates in this way, that is, __6 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) ..... 1 .----------. {INSTALL -------- ORDER --------- LINE. ^ (Please read the notes on the back before filling this page) 417163 A7 ~-— B7 _ V. Description of the invention (g) The polymer disclosed on the surface of the electrode plate on the spin-on-glass (SOG) etching machine can be cleaned by the method disclosed in the present invention. (Please read the precautions on the back before filling out this page), please continue to refer to Figure 2. Step 207 is the focus of the present invention. In the same etching reaction chamber of the remaining machine, it contains oxygen, argon and tetrafluoride. The carbonized carbon (CF4) plasma removes the high-molecular polymers deposited on the surface of the electrode plate on the spin-on glass etcher. In this step, under a pressure of about 200-400 mtorr, the gas flow rate of oxygen (〇2) is between 30-100 sccm, the gas flow rate of CF4 is 30-1 〇seem, and the Ar gas flow rate is 50-200 seem. For about 60-120 seconds, the polymer deposited on the surface of the electrode plate can be economically and efficiently removed without stopping the etching machine, and the cleaning is reduced. The frequency of the spin-on glass film (SOG) line etcher and the better response rate of the etcher and the uniformity of the etch back, which can greatly increase the productivity of the spin-on glass film (SOG) etcher and reduce production costs. . The method for cleaning a spin-on glass film etching machine according to the present invention is completed in a concrete. After the etching machine is cleaned, the next batch of spin-on glass film (SOG) etch-back operations can be performed in accordance with steps 201 to 205 described above. The above is the use of the best embodiment to illustrate the present invention, but not to limit the present invention, and is well known to those skilled in semiconductor technology, and appropriate changes and adjustments can be made. , Still will not lose the gist of the present invention, nor depart from the spirit and scope of the present invention. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)