A7 B7 4Q9a〇4 4640twf.doc/008 五、發明說明（/ ) 本發明是有關於一種半導體介層窗的製造方法，且特 別是有關於一種未承接介層窗(unlanded via)的製造方法。 在半導體兀件結構尺寸日漸縮小下，光罩與圖案間對 不準的機會日益增加，其中’當對不準的情況發生在形成 介層窗的製程時’容易造成金屬層側壁介電層的過度蝕 刻’因此’除了因對不準而形成未承接介層窗外，上述之 過度触刻將導致後續製程進行與電性上的問題。第1A-1D 圖係顯示習知未承接介層窗的製造流程剖面圖。 請參照第1A圖，在一基底1〇〇上形成有已經定義的金 屬層102a、102b ’接著，如第1B圖所示，在基底1〇〇與 金屬層l〇2a ' 102b上形成一內金屬介電層（inter-metal dielectric，IMD)104,內金屬介電層1〇4覆蓋金屬層i〇2a、 l〇2b，且隨金屬層102具有高低起伏的表面。隨後，對內 金屬介電層104進行一化學機械研磨法（chemical mechanical polishing，CMP)，以平坦化內金屬介電層104 表面。 然而，由於同一晶片上同時具有小面積與大面積的金 屬層102a、102b，以及金屬層102a、l〇2b本身亦具有緊 密(dense)或較爲分散的圖案，因此，當前述的CMP製程 進行後，因CMP硏磨的特性之故，使得金屬層1 02a、102b 平坦化的表面具有一高低落差h，如第1C圖所示，而此高 度落差h可高達2000埃左右。 之後，以微影蝕刻法定義內金屬介電層1〇4 ’因對不 準的因素，而在金屬層l〇2a上形成未承接介層窗開口 ________f___ ......、 - (請先閱讀背面之注意事項再填寫本頁) .1JII 訂 ίι----r---線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4093G4 4640twf.doc/〇〇8 五、發明說明（l) l〇6a ’如第Π>圖所示。其中，爲了彌補因CMP平坦化而 造成內金屬介電層104在厚度上的差異，使較厚的內金屬 介電層104得以完全去除而暴露出金屬層102b’因此往往 在定義介層窗開口 106b時，需進行內金屬介電層104過 度蝕刻的步驟。然而，在此過度蝕刻製程中，將造成內金 屬介電層1〇4較薄處的金屬層102a，其側壁的內金屬介電 層104的過度蝕刻，而當金屬材料塡入未承接介層窗開口 l〇6a以形成介層窗時，則金屬層l〇2a側壁內金屬介電層 104的過度蝕刻導致後續製程及如RC阻値增加等電性上 的問題。 經濟部智慧財產局員工消費合作杜印製 (請先閱讀背面之注意事項再填窝本頁) 有鑑於此，本發明就是在提供一種未承接介層窗的製 造方法，包括具有一金屬層之一基底，而金屬層上形成有 抗反射塗覆層。接著，在金屬層側壁與抗反射塗覆層上形 成一襯介電層（liner dielectric)，續在襯介電層上形成一絕 緣材料層，絕緣材料層在經回蝕刻後，使其具有一較抗反 射塗覆層爲低之一上表面，而暴露出襯介電層。隨後，在 絕緣材料層與金屬層上形成一平坦化之保護層，其中保護 層材質與襯介電層不同，接著在保護層上形成一內金屬介 電層。續以襯介電層爲蝕刻終止層，微影蝕刻內金屬介電 層與保護層，之後再去除金屬層上暴露出之襯介電層，而 形成一未承接介層窗開口。 本發明再提供一種未承接介層窗的製造方法，包括具 有金屬導線的一基底，而金屬導線上具有抗反射塗覆層， 其中金屬導線以間隙隔開。之後在間隙中塡入絕緣材料， 4 本紙張尺度適用中國國家標準（CNS)A4规格（210 X 297公釐） 4640twf.doc/008 經濟部智慧財產局員工消費合作社印製 五、發明說明（勺> 並使絕緣材料的上表面低於抗反射塗覆層之上表面，接 著，在絕緣材料上形成一保護層，使絕緣材料層上之保護 層上表面至少與抗反射塗覆層的上表面爲高。續在保護層 和金屬導線上形成一內金屬介電層，並定義內金屬介電 層，而形成一未承接介層窗開口。 本發明再提供一種介層窗的製造方法，包括具有一第 一金屬層舆一第二金屬層之一基底，而第一金屬層與第二 金屬層上形成有一抗反射塗覆層。接著，在基底上形成一 共形襯介電層，並在共形襯介電層上形成一絕緣材料層， 在回蝕刻絕緣材料層之後，至少暴露出第一金屬層上之共 形襯介電層，而第二金屬層上殘留部分絕緣材料層。之 後，在絕緣材料層與第一、第二金屬層上形成一保護層， 續在第二金屬層上之保護層與絕緣材料層定義一開口，再 進行平坦化保護層的步驟。隨後，在保護層、第一與第二 金屬層上形成一內金屬介電層，並定義內金屬介電層，而 在第一金屬層上形成一未承接介層窗開口，在第二金屬層 上形成一承接介層窗開口。 本發明係在金屬層上形成一襯介電層，襯介電層係作 爲未承接介層窗開口蝕刻製程之蝕刻終止層，由於襯介電 層在金屬層側壁的厚度較厚，且再加上金屬層間的保護層 比金屬層上方的保護層厚’因此當蝕刻未承接介層窗開口 製程繼續進行時，可減緩金屬層側壁襯介電層的過度蝕 刻。 爲讓本發明之上述和其他目的、特徵、和優點能更明 5 (請先閒讀背面之注意事項再填寫本頁) ，Ί - -----"1 !訂--κ---_ 線. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 409364 4040twf.doc/008 i、發明說明（) 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A-1D圖係顯示一種習知未承接介層窗開口的製造 流程剖面圖； 第2A-2H圖係顯示根據本發明較佳實施例未承接介層 窗之製程流程剖面圖；以及 第3A-3D圖係顯示根據第2A-2H圖本發明較佳實施 例，金屬圖案區承接介層窗部分之製造流程剖面圖。 其中，各圖標號之簡單說明如下’· 100、200 :基底 102a、102b :金屬層. 104、217、215 :內金屬介電層 106a、106b :未承接介層窗開口 202a、202b :金屬圖案區 204 ' 206 :金屬層 207 :間隙 208 :抗反射塗覆層 210 :襯介電層 212、212a、212b、212c :絕緣材料層 214、214a、214b :保護層 216、218 ··開口 218a :未承接介層窗開口 220、222 :承接介層窗開口 6 J. -I I I ---I Γ I I l· « — III. (請先閱讀背面之注意事項再填寫本頁) 訂in---ί----線 J· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 409364 4640twf.doc/008 經濟部智慧財產局員工消費合作杜印製 五、發明說明（f ) 實施例 爲了克服未承接介層窗金屬側壁介電層過度蝕刻所造 成的困擾，本較佳實施例利用一襯氧化物層作爲未承接介 層窗開口蝕刻時的鈾刻終止層’而由於襯氧化物層在金屬 層側壁的厚度大於在金屬層上方的厚度，因此可減緩未承 接介層窗金屬層側壁的介電層過度蝕刻的程度。 本發明之較佳實施例係先在具有一抗反射塗覆層的金 屬導襯上與側壁形成一襯介電層，之後先後進行一絕緣材 料的沉積與回蝕刻步驟，使絕緣材料塡入金屬導線與金屬 導線間之間隙，而使絕緣材料層的上表面低於抗反射塗覆 層的上表面。接著’對基底沉積一保護層，覆蓋襯介電層 與絕緣材料層，續以化學機械硏磨法平坦化保護層，由於 絕緣材料層表面係低於抗反射塗覆層表面，因此保護層在 絕緣材料層上的厚度可大於其在金屬導線上的厚度。之 後，在保護層上形成一內金屬介電層，並進行微影蝕刻製 程，定義內金屬介電層與保護層，而使鈾刻製程停在抗反 射塗覆層上的襯介電層，續再去除襯介電層，使抗反射塗 覆層暴露出’而因微影製程的對不準而形成一未承接介層 窗開口。 而當回鈾刻絕緣材料層時，有部分的金屬導線，例如 大面積的金屬導線或是在分布較爲緊密的金屬導線區 上，仍可能殘留絕緣材料層，此容易造成後續介層窗開口 蝕刻的困難。因此若有殘留的情況發生時，即在保護層沉 積後，硏磨保護層前’先對上方殘留有絕緣材料層的金屬 7 (請先閲讀背面之注意事項再填寫本頁) 滅· ---- - 訂、· 線ϋ- f紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 409364 A7 4640twf,doc/008 37 五、發明說明（4〉 導線其上方的保護層與絕緣材料層進行一微影蝕刻製 程，去除部分的保護層與絕緣材料層’而在金屬層上方形 成一開口。之後，再進行保護層的平坦化步驟等後續步 驟。由於事先去除金屬層上方的部分的保護層與絕緣材料 層，故可使後續介層窗開口形成的蝕刻製程順利進行。 第2A-2H圖所示，爲根據本發明一較佳實施例未承接 介層窗之製造流程剖面圖。請參照第2A圖，在同一晶圓 的基底200上具有金屬層2(M面積較小的金屬圖案區202a 以及金屬層206面積較大的金屬圖案區202b，金屬層 204、206例如作爲導線之用，其之間以間隙207互相隔開。 其中金屬層204、206上具有一抗反射塗覆層（anti-reflective coating, ARC)208 ， 例如以 氮化欽 的材質 構成， 厚度約爲500-1000埃左右。 接著，如第2B圖所示，在基底200、抗反射塗覆層208 與金屬層204、206上方及側壁上形成一共形襯介電層 (linear dielectric layer)210，例如以化學氣相沉積法形成氧 化物，厚度約爲2000埃左右。之後，在襯介電層210上 形成一絕緣材料層212，例如旋塗式玻璃（spin on glass， S〇G)，絕緣材料層212塡入間隙207(FIG. 2A)，覆蓋襯介 電層210,其中襯介電層210的存在可避免絕緣材料層212 與金屬層204、206的直接接觸。 之後，回f虫刻（etch back)絕緣材料層212，而回纟虫刻後 的絕緣材料層212a上表面不得高於抗反射塗覆層208的表 面’亦即，需低於抗反射塗覆層208的表面，僅使絕緣材 8 (請先閱讀背面之注意事項再填寫本頁) 0 丨·* —丨訂 ί;---.1_----線-^-/ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 經濟部智慧財產局員工消費合作社印製 409364 4640twf.doc/008 五、發明說明（。） 料層212a塡入金屬層204、206間的間隙207，並且至少 使金屬圖案區202a的金屬層204上的襯介電層210暴露 出’如第2C圖所示。其中金屬層204上的襯介電層210 亦可能在回蝕刻步驟時去除，而暴露出抗反射塗覆層 208。_然而，當在金屬圖案區202a上的絕緣材料層212完 全去除時’在金屬圖案區2〇2b的金屬層206上，仍可能 殘留部分的絕緣材料層2Ub。而爲了避免在完全去除金屬 圖案區2〇2b上金屬層2〇4上絕緣材料層212b時可能對金 屬圖案區2〇2a金屬層2〇4的過度蝕刻，因此即使在金屬層 2〇6殘留有絕緣材料2m ’仍不繼續進行回蝕刻的步驟。 請參照第2D圖，之後，在金屬層204、抗反射塗覆層 2〇8以及絕緣材料層212a、212b上形成一保護層214，保 護層214材質須與襯介電層210具有不同的鈾刻比，例如 以氮化矽或矽氧氮化物組成，以化學氣相沉積法形成。 爲了避免金屬圖案區2〇2b金屬層206上的保護層214 與殘留的絕緣材料層212b，在後續蝕刻介層窗開口時產生 無法完全暴露出金屬層2〇6的問題，因此，若是在金屬層 206上殘留有絕緣材料層212b時，則在金屬層206上的保 護層206與絕綠材料層212b進行以微影飩刻定義的步 驟，以光罩覆蓋住金屬圖案區212&上金屬層204,而在金 屬層2〇6上方的保護層214a與絕綠材料層212b形成一開 口 216,如第2E圖所示，去除金屬層2〇6上的保護層214， 而暴露出絕緣材料層2Ub，其中部分的絕緣材料層212b 可能同時去除。 9 本紙張尺度適用中國國家標準（CNS)A4.規格（210 X 297公楚） -—— — — ΙΙΙΓ I I l· ^ I--- . (請先閲讀背面之注意事項再填寫本頁) iri^——-卜---線 Ό. 經濟部智慧財產局員工消費合作杜印製 409364 A? 4640twf.doc/008 g7 五、發明說明（） 接著，對金屬層204 ' 2〇6上的保護層214、214a進行 平坦化步驟，如第2F圖所示，例如以化學機械硏磨法進 行，將大部分的保護層214、2!4b去除，由於在之前的步 驟已先去除金屬層206上部分的保護層214a，因此在硏磨 保護層214、214a時，金屬層206上的保護層可幾乎完全-去除，而金屬層204上的保護層214有部分殘留。但亦可 以襯介電層21〇硏磨終點，硏磨至暴露出襯介電層21〇， 但在絕綠材料層212a的上方仍有部分的保護層214存在。 續在保護層214、214a上形成一內金屬介電層215。 之後，請參照第2G圖，定義內金屬介電層215，例如 以微影蝕刻法進行，蝕刻步驟係以不等向性蝕刻法進行， 以襯介電層210爲蝕刻終止層，依序蝕刻內金屬介電層215 與保護層214，而在金屬層204上形成一開口 218，暴露 出襯介電層210。由於微影製程的對不準，使得開口 218 僅有部分位於金屬層2〇4的上方，而部分係位於金屬層204 側壁的襯介電層210與絕緣材料層212a的上方。另外，上 述之微影製程亦在金屬層206上方的內金屬介電層215與 絕緣材料層212b形成一開口 220，暴露出抗反射塗覆層 208 - 如第2H圖所示，接著進行去除金屬層204上暴露出的 襯介電層210，使金屬層204上的抗反射塗覆層208暴露 出，形成一未承接介層窗開口 218a，其中由於金屬層204 側壁的襯介電層210較其表面的襯介電層210爲厚，且絕 緣材料層212a上具有保護層214,再加上襯介電層210在 (請先閱讀背面之注意事項再填寫本頁) -「/衣---11----訂-1^---Γ---、 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 4093G4 a7 464〇twf. doc/008 B7 五、發明說明（y) 金屬層204側壁的寬度很小，因此當去除暴露出的襯介電 層210時，金屬層204側壁較厚的襯介電層210與保護層 214可抵擋蝕刻劑的過度蝕刻，故可避免後續製程及電性 上的問題，而由於金屬層206的面積較大，因此較不易產^ 生微影製程無法對準的情況，故形成一承接介層窗(landed ~ via)220 。 此外，在金屬圖案區202b之製程，在第2E圖中形成 的開口 216亦可如第3A圖所示之開口 216a所示，同時完 全去除金屬層206上的保護層214a與絕緣材料層212c， 暴露出襯介電層210。而之後，同樣經過平坦化保護層214a 的步驟，將保護層214a去除，暴露出絕緣材料層212c， 如第3B圖所示。 接著，在絕緣材料層212c上形成內金屬介電層217 .， 覆蓋開口 216a，如第3C圖所示。隨後，定義內金屬介電 層217與襯介電層210，而形成一承接介層窗開口 222， 如第3D圖所示。 而第2H圖中的未承接介層窗開口 218a、承接介層窗 開口 220以及以第3A-3D圖所形成的承接介層窗開口 222，其後續的製程如習知技藝，再塡以導電材料，而形 成未承接介層窗或承接介層窗。 本發明之較佳實施例係在金屬層上提供一層襯介電 層，則襯介電層在金屬層側壁的厚度較金屬層上方爲厚， 另外，在金屬層間之間隙塡入絕緣材料層，使絕緣材料層 上方所提供之保護層厚度比金屬層上方之保護層厚。由於 -1 I-----U------------ I 訂-—h'!h---線- .. ..- (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 409364 4640twf.doc/008 五、發明說明（β) 厚度較厚的襯介電層與保護層的阻擋，故不致在形成未承 接介層窗過度蝕刻襯介電層，因此可改善習知因過度蝕刻 造成後續製程或電性上的問題。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 --------r---"'.衣--- (請先閱讀背面之法意事項再填寫本頁) 訂-LI — ——線. 經濟部智慧財產局貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐）A7 B7 4Q9a〇4 4640twf.doc / 008 V. Description of the Invention (/) The present invention relates to a method for manufacturing a semiconductor interlayer window, and in particular to a method for manufacturing an unlanded via. As the structure size of semiconductor elements is shrinking, the chance of misalignment between the mask and the pattern is increasing, and 'when the misalignment occurs during the process of forming the dielectric window', it is easy to cause the dielectric layer of the metal layer sidewall. Excessive etching, therefore, in addition to the formation of unaccepted interlayer windows due to misalignment, the above-mentioned excessive etching will lead to subsequent process and electrical problems. Figures 1A-1D are cross-sectional views showing the manufacturing process of a conventional unaccepted via window. Referring to FIG. 1A, a defined metal layer 102a, 102b is formed on a substrate 100. Next, as shown in FIG. 1B, an inner layer is formed on the substrate 100 and the metal layer 102a '102b. An inter-metal dielectric (IMD) 104, the inner metal dielectric layer 104 covers the metal layers 102a and 102b, and has a fluctuating surface with the metal layer 102. Subsequently, a chemical mechanical polishing (CMP) method is performed on the inner metal dielectric layer 104 to planarize the surface of the inner metal dielectric layer 104. However, since the metal layers 102a and 102b and the metal layers 102a and 102b on the same wafer have both small and large areas, they also have dense or scattered patterns. Therefore, when the aforementioned CMP process is performed, Later, due to the characteristics of CMP honing, the flattened surfaces of the metal layers 102a and 102b have a height drop h, as shown in FIG. 1C, and the height drop h can be as high as about 2000 Angstroms. Afterwards, the lithographic etching method is used to define the inner metal dielectric layer 104 'due to inaccurate factors, and an unaccepted interlayer window opening is formed on the metal layer 102a ________f___ ...,-( (Please read the precautions on the back before filling this page). 1JII order ί ---- r --- line · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 specifications (210 X 297 mm) 4093G4 4640twf.doc / 〇〇8 V. Description of the invention (1) 106a 'as shown in Figure Π >. Among them, in order to compensate for the difference in thickness of the inner metal dielectric layer 104 caused by CMP planarization, the thicker inner metal dielectric layer 104 can be completely removed and the metal layer 102b 'is exposed. Therefore, the opening of the dielectric layer window is often defined. At 106b, a step of over-etching the inner metal dielectric layer 104 is required. However, in this over-etching process, the metal layer 102a at the inner metal dielectric layer 104 is thinner, and the inner metal dielectric layer 104 on the sidewall is over-etched, and when the metal material penetrates into the unaccepted dielectric layer When the window opening 106a is formed to form a dielectric window, the excessive etching of the metal dielectric layer 104 in the sidewall of the metal layer 102a leads to subsequent processes and electrical problems such as increased RC resistance. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation (please read the precautions on the back before filling in this page). In view of this, the present invention is to provide a method for manufacturing an unaccepted interlayer window, including a metal layer. A substrate, and an anti-reflection coating layer is formed on the metal layer. Next, a liner dielectric layer is formed on the side wall of the metal layer and the anti-reflection coating layer, and then an insulating material layer is formed on the liner dielectric layer. After the etch back layer, the insulating material layer has a It is a lower surface than the anti-reflection coating, and the dielectric layer is exposed. Subsequently, a planarized protective layer is formed on the insulating material layer and the metal layer, wherein the material of the protective layer is different from that of the liner dielectric layer, and then an inner metal dielectric layer is formed on the protective layer. Continue to use the liner dielectric layer as an etch stop layer, lithographically etch the inner metal dielectric layer and the protective layer, and then remove the exposed dielectric layer on the metal layer to form an unsupported dielectric window opening. The invention further provides a method for manufacturing an unsupported via window, which includes a substrate with metal wires, and the metal wires have an anti-reflection coating layer, wherein the metal wires are separated by a gap. Insulation material was inserted into the gap afterwards. 4 paper sizes are in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4640twf.doc / 008 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. > Make the upper surface of the insulating material lower than the upper surface of the anti-reflection coating layer, and then, form a protective layer on the insulating material so that the upper surface of the protective layer on the insulating material layer is at least equal to the upper surface of the anti-reflection coating layer. The surface is high. Continue to form an inner metal dielectric layer on the protective layer and the metal wire, and define the inner metal dielectric layer to form an unaccepted dielectric window opening. The present invention further provides a method for manufacturing a dielectric window, The method includes a substrate having a first metal layer and a second metal layer, and an anti-reflection coating layer is formed on the first metal layer and the second metal layer. Next, a conformal-lined dielectric layer is formed on the substrate, and An insulating material layer is formed on the conformal liner dielectric layer. After the insulating material layer is etched back, at least the conformal liner dielectric layer on the first metal layer is exposed, and a portion of the insulating material layer remains on the second metal layer. After that, a protective layer is formed on the insulating material layer, the first and second metal layers, and the protective layer and the insulating material layer on the second metal layer define an opening, and then the step of planarizing the protective layer is performed. Then, in An inner metal dielectric layer is formed on the protection layer, the first and second metal layers, and the inner metal dielectric layer is defined. An unaccepted dielectric window opening is formed on the first metal layer, and is formed on the second metal layer. The invention provides a dielectric window opening. The present invention is to form a lining dielectric layer on a metal layer, and the lining dielectric layer is used as an etching stop layer that does not accept the dielectric window opening etching process, because the lining dielectric layer is on the side wall of the metal layer. The thickness is thicker, and the protective layer between the metal layers is thicker than the protective layer above the metal layer. Therefore, when the etching process of the opening of the window without the interlayer is continued, the over-etching of the dielectric layer on the sidewall of the metal layer can be slowed down. To make the above and other objects, features, and advantages of the present invention clearer (please read the precautions on the back before filling out this page), Ί------ " 1! Order --κ --- _ Line. This paper size applies Chinese national standard (CNS) A4 specification (210 X 297 mm) A7 B7 409364 4040twf.doc / 008 i. Description of the invention () It is easy to understand. A preferred embodiment is given below, and it will be described in detail in conjunction with the attached drawings. : A brief description of the drawings: Figures 1A-1D are cross-sectional views showing a manufacturing process of a conventional unaccepted interstitial window opening; Figures 2A-2H show a manufacturing process of unaccepted interstitial windows according to a preferred embodiment of the present invention Sectional views of the process; and FIGS. 3A-3D are cross-sectional views showing the manufacturing process of the metal pattern area receiving the interlayer window portion according to the preferred embodiment of the present invention according to FIGS. 2A-2H. Among them, the brief description of each icon number is as follows. 100, 200: substrates 102a, 102b: metal layers. 104, 217, 215: inner metal dielectric layers 106a, 106b: unaccepted interlayer window openings 202a, 202b: metal pattern areas 204 '206: metal layers 207: gaps 208 : Anti-reflective coating layer 210: Dielectric layer 212, 212a, 212b, 212c: Insulating material layer 214, 214a, 214b: Protective layer 216, 218 · Opening 218a: Unsupported dielectric window opening 220, 222: Accepted Via window opening 6 J. -III --- I Γ II l · «— III. (Please read first Read the notes on the back and fill in this page) Order in --- ί ---- line J. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297) (%) 409364 4640twf.doc / 008 Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Co-operation, Printed by Du, V. Description of Invention (f) Example In order to overcome the problems caused by overetching the dielectric layer of the metal sidewall of the dielectric window, the better The embodiment uses a liner oxide layer as the uranium etch stop layer when the opening of the interposer window is not etched, and since the thickness of the liner oxide layer on the side wall of the metal layer is greater than the thickness above the metal layer, the unsupported interlayer can be slowed down. Excessive etch of the dielectric layer on the side wall of the window metal layer. A preferred embodiment of the present invention is to first form a dielectric layer with a sidewall on a metal guide liner having an anti-reflection coating layer, and then successively perform an insulating material deposition and etch-back step to inject the insulating material into the metal. The gap between the wire and the metal wire makes the upper surface of the insulating material layer lower than the upper surface of the anti-reflection coating layer. Then, a protective layer is deposited on the substrate, covering the dielectric layer and the insulating material layer, and then the chemical protective layer is used to planarize the protective layer. Since the surface of the insulating material layer is lower than the surface of the anti-reflection coating layer, the protective layer is The thickness of the insulating material layer may be greater than its thickness on the metal wire. After that, an inner metal dielectric layer is formed on the protective layer, and a lithographic etching process is performed to define the inner metal dielectric layer and the protective layer, so that the uranium engraving process stops on the anti-reflection coating layer. Continue to remove the lining dielectric layer to expose the anti-reflective coating layer and form an unaccepted dielectric window opening due to the misalignment of the lithographic process. When the insulating material layer is etched back to the uranium, some metal wires, such as large-area metal wires or on densely distributed metal wire areas, may still have the insulating material layer, which may easily cause subsequent openings of the interlayer window. Difficult to etch. Therefore, if there is a residual situation, that is, after the protective layer is deposited, before honing the protective layer, 'the metal 7 with the insulating material layer remaining on it (please read the precautions on the back before filling this page). Off ·- --Order, · Line ϋ-f Paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 409364 A7 4640twf, doc / 008 37 V. Description of the invention (4) The protective layer and the insulating material layer above the wire are subjected to a lithographic etching process, and a part of the protective layer and the insulating material layer is removed to form an opening above the metal layer. Then, a planarization step of the protective layer is performed. Subsequent steps. Since the protective layer and the insulating material layer above the metal layer are removed in advance, the etching process for the subsequent formation of the opening of the interlayer window can be carried out smoothly. As shown in Figures 2A-2H, it is a preferred implementation according to the present invention. For example, the cross-sectional view of the manufacturing process without accepting the interlayer window. Please refer to FIG. 2A, there is a metal layer 2 (the metal pattern area 202a with a smaller M area and the metal layer 206 has a smaller area on the base 200 of the same wafer). In the metal pattern region 202b, the metal layers 204 and 206 are used as wires, for example, and they are separated from each other by a gap 207. The metal layers 204 and 206 have an anti-reflective coating (ARC) 208 thereon. For example, it is made of a nitride material, and the thickness is about 500-1000 Angstroms. Next, as shown in FIG. 2B, a total of the substrate 200, the anti-reflection coating layer 208, and the metal layers 204 and 206 is formed on the side walls. The linear dielectric layer 210, for example, is formed by chemical vapor deposition with a thickness of about 2000 angstroms. Then, an insulating material layer 212 is formed on the liner dielectric layer 210, such as a spin coating method. Spin on glass (SOG), the insulating material layer 212 is inserted into the gap 207 (FIG. 2A), and covers the dielectric layer 210, wherein the presence of the dielectric layer 210 can avoid the insulating material layer 212 and the metal layer 204 Direct contact with 206. After that, etch back the insulating material layer 212, and the upper surface of the insulating material layer 212a after the etch back must not be higher than the surface of the anti-reflection coating layer 208. That is, it is necessary to Lower than the surface of the anti-reflection coating 208, only Insulation material 8 (Please read the precautions on the back before filling this page) 0 丨 · * — 丨 Order ί; ---. 1 _---- line-^-/ This paper size applies to Chinese National Standard (CNS) A4 Specifications (210 x 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 409364 4640twf.doc / 008 V. Description of the invention (. The material layer 212a is inserted into the gap 207 between the metal layers 204 and 206, and at least the liner dielectric layer 210 on the metal layer 204 of the metal pattern region 202a is exposed 'as shown in FIG. 2C. The liner dielectric layer 210 on the metal layer 204 may also be removed during the etch-back step, and the anti-reflective coating layer 208 is exposed. _ However, when the insulating material layer 212 on the metal pattern region 202a is completely removed 'On the metal layer 206 of the metal pattern region 202b, a part of the insulating material layer 2Ub may still remain. In order to avoid over-etching the metal pattern area 202a and the metal layer 204 when the insulating layer 212b is removed from the metal layer 204 and the metal pattern area 002b, the metal pattern area 206b remains even in the metal pattern area 206b. With the insulating material 2m ', the etch-back step is not continued. Please refer to FIG. 2D. After that, a protective layer 214 is formed on the metal layer 204, the anti-reflection coating layer 208, and the insulating material layers 212a and 212b. The material of the protective layer 214 must be different from that of the dielectric layer 210. The etching ratio is composed of, for example, silicon nitride or silicon oxynitride, and is formed by a chemical vapor deposition method. In order to avoid the protection layer 214 and the remaining insulating material layer 212b on the metal pattern region 202b of the metal pattern region, the problem that the metal layer 206 cannot be completely exposed during the subsequent etching of the opening of the via window is caused. When the insulating material layer 212b remains on the layer 206, the protective layer 206 and the green insulating material layer 212b on the metal layer 206 are subjected to a step defined by lithography, and the metal pattern area 212 & the upper metal layer is covered with a photomask. 204, and the protective layer 214a above the metal layer 206 and the green insulating material layer 212b form an opening 216. As shown in FIG. 2E, the protective layer 214 on the metal layer 206 is removed, and the insulating material layer is exposed. 2Ub, part of the insulating material layer 212b may be removed at the same time. 9 This paper size applies to Chinese National Standard (CNS) A4. Specifications (210 X 297 cm) -—— — — ΙΙΙΓ II l · ^ I ---. (Please read the precautions on the back before filling this page) iri ^ ——- 卜 --- LINE Ό. Consumption cooperation of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 409364 A? 4640twf.doc / 008 g7 V. Description of the invention () Next, the protection on the metal layer 204'206 The layers 214 and 214a are subjected to a planarization step. As shown in FIG. 2F, for example, a chemical mechanical honing method is used to remove most of the protective layers 214 and 2! 4b. Since the metal layer 206 has been removed in the previous step, Part of the protective layer 214a, so when honing the protective layers 214, 214a, the protective layer on the metal layer 206 can be almost completely removed, while the protective layer 214 on the metal layer 204 is partially left. However, the end of the lining dielectric layer 21 may be honed, and the lining dielectric layer 21 is exposed, but a portion of the protective layer 214 still exists above the green insulating material layer 212a. An inner metal dielectric layer 215 is formed on the protection layers 214 and 214a. After that, referring to FIG. 2G, the inner metal dielectric layer 215 is defined, for example, by a lithographic etching method. The etching step is performed by an anisotropic etching method, and the liner dielectric layer 210 is used as an etching stop layer, and the etching is sequentially performed. The inner metal dielectric layer 215 and the protective layer 214 form an opening 218 in the metal layer 204 to expose the liner dielectric layer 210. Due to the misalignment of the lithography process, the opening 218 is only partially located above the metal layer 204, and partially located above the liner dielectric layer 210 and the insulating material layer 212a on the sidewall of the metal layer 204. In addition, the above lithography process also forms an opening 220 in the inner metal dielectric layer 215 and the insulating material layer 212b above the metal layer 206, exposing the anti-reflective coating layer 208-as shown in Figure 2H, followed by metal removal. The liner dielectric layer 210 exposed on the layer 204 exposes the anti-reflective coating layer 208 on the metal layer 204 to form an unaccepted dielectric window opening 218a. The liner dielectric layer 210 on the sidewall of the metal layer 204 is The surface lining dielectric layer 210 is thick and there is a protective layer 214 on the insulating material layer 212a, plus the lining dielectric layer 210 is on (please read the precautions on the back before filling this page)-"/ 衣- -11 ---- Order -1 ^ --- Γ ---, This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 4093G4 a7 464 Doc / 008 B7 V. Description of the invention (y) The width of the side wall of the metal layer 204 is small, so when the exposed dielectric layer 210 is removed, the thicker side of the metal layer 204 and the protection layer 210 and the protection The layer 214 can resist the over-etching of the etchant, so that subsequent process and electrical problems can be avoided, and Because the area of the metal layer 206 is larger, it is less likely to produce a situation where the lithography process cannot be aligned, so a landed window (landed ~ via) 220 is formed. In addition, the process of the metal pattern area 202b is The opening 216 formed in FIG. 2E can also be shown as the opening 216a shown in FIG. 3A, and at the same time, the protective layer 214a and the insulating material layer 212c on the metal layer 206 are completely removed, and the dielectric layer 210 is exposed. After the step of planarizing the protective layer 214a, the protective layer 214a is removed to expose the insulating material layer 212c, as shown in FIG. 3B. Next, an inner metal dielectric layer 217 is formed on the insulating material layer 212c to cover the opening 216a, As shown in Figure 3C. Subsequently, the inner metal dielectric layer 217 and the liner dielectric layer 210 are defined to form a receiving dielectric window opening 222, as shown in Figure 3D. And the unsupported dielectric layer in Figure 2H The window opening 218a, the interposer window opening 220, and the interposer window opening 222 formed according to FIGS. 3A-3D. The subsequent process is as a conventional technique, and then conductive materials are used to form an unsupported interposer window or To undertake the interlayer window. An embodiment is to provide a dielectric layer on the metal layer. The thickness of the dielectric layer on the side wall of the metal layer is thicker than that of the metal layer. In addition, the insulating material layer is inserted into the gap between the metal layers so that the insulating material layer is above the insulating material layer. The protective layer provided is thicker than the protective layer above the metal layer. Because -1 I ----- U ------------ I order-h '! H --- line- .. ..- (Please read the notes on the back before filling out this page) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 409364 4640twf.doc / 008 V. Description of Invention (β) The barrier between the thicker lining dielectric layer and the protective layer prevents over-etching of the lining dielectric layer in the formation of unaccepted dielectric windows, so it is possible to improve the conventional process or electrical problems caused by over-etching. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. -------- r --- " '. 衣 --- (Please read the French and Italian matters on the back before filling in this page) Order -LI — —— Line. Shellfish Consumption of Intellectual Property Bureau, Ministry of Economic Affairs The paper size printed by the cooperative applies the Chinese national standard (CNS > A4 specification (210 X 297 mm)