TW409264B - Method for manufacturing resistors - Google Patents

Method for manufacturing resistors Download PDF

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Publication number
TW409264B
TW409264B TW088100270A TW88100270A TW409264B TW 409264 B TW409264 B TW 409264B TW 088100270 A TW088100270 A TW 088100270A TW 88100270 A TW88100270 A TW 88100270A TW 409264 B TW409264 B TW 409264B
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Taiwan
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substrate
electrode layer
side electrode
patent application
scope
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TW088100270A
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Chinese (zh)
Inventor
Hiroyuki Yamada
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Matsushita Electric Ind Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/001Mass resistors

Abstract

A method for manufacturing resistors comprising the steps of forming a top electrode layer on a top face of a substrate, a resistance pattern connected to the top electrode layer, a protective layer covering the resistance pattern, a thin metal film side electrode layer on a side face of the substrate which is electrically connected to the top electrode layer, and a concavity by removing a part of the side electrode layer and substrate.

Description

五、發明説明( 5 10 409264 A7 B7 本發明係有關於一種用於製造通常在電子電路中使用之 電阻器的方法。 隨著電子設備之尺寸持續變小,係越來越需要具有高精 確阻抗以免除電子電路之調整的矩形晶片電阻器。特別地 ’由於矩形晶片電阻器之阻抗的允許誤差係在土 〇.5%至土 〇_1%的範圍,由薄金屬薄膜阻抗材料製成之能夠輕易獲得 精確阻抗之矩形晶片電阻器的需求係超過由以磨擦材料製 成之厚膜阻抗建構而成之習知矩形晶片電阻器的需求β 再者,由於需要增加電路板上之電子組件的安裝密度, 多曰曰片電阻器的需求’其為由兩或更多個矩形晶片電阻器 組成的組件,係持續增加。在多晶片電阻器的領域中,具 有薄金屬阻抗的薄膜多晶片電阻器(於此後稱為„電阻器,,) 的需求亦係超過具有厚膜阻抗之習知多晶片電阻器的需求 諳-先 聞. 讀 背 面 之 注 意 事 項 ρ 本 頁 裝 座濟部中央.#準爲:β.τ.:ίί!.费合作杜印裒 一種習知的電阻器製造方法係配合第4圖來在下面作 說明》 首先,由96%鋁製成的一基體21被提供(步驟A)。該 基體21具有一表面,該表面在固定間隔處係有水平分割凹 槽(縫隙)22和垂直分割凹槽(缝隙)2],俾可構形兩或更 多個阻抗元件。貫孔24係設於水平分割凹槽22中。一薄 膜頂電極層25,典型地由Au製成,係形成於該基體21的 頂表面上,跨越水平分割凹槽22並位於貫孔24的兩側( 步驟B)。 然後,一薄膜底電極層(圖中未示),典型地由Au製成 第4頁 本紙張尺度適用中國國家標荜(CNS M4規格(210X29?公着) 訂V. Description of the invention (5 10 409264 A7 B7 The present invention relates to a method for manufacturing a resistor commonly used in electronic circuits. As the size of electronic devices continues to decrease, the system is increasingly required to have high precision impedance A rectangular chip resistor to avoid the adjustment of the electronic circuit. In particular, because the allowable error of the resistance of the rectangular chip resistor is in the range of 0.5% to 0%, it is made of a thin metal film resistance material. The demand for rectangular chip resistors that can easily obtain precise impedance exceeds the demand for conventional rectangular chip resistors constructed of thick film impedances made of friction materials. Furthermore, due to the need to increase the number of electronic components on circuit boards, Mounting density, demand for chip resistors is a component consisting of two or more rectangular chip resistors, which is continuously increasing. In the field of multi-chip resistors, thin-film multi-chip resistors with thin metal resistance The demand for resistors (hereinafter referred to as „resistors,” also exceeds the demand for conventional multi-chip resistors with thick film impedance 谙 -first news. Read the back Notes ρ This page is located in the center of the Ministry of Economic Affairs. #Quasi is: β.τ.: ίί !. Fei He Du Yin 裒 A conventional resistor manufacturing method is explained below with reference to Figure 4. First, by A base 21 made of 96% aluminum is provided (step A). The base 21 has a surface with horizontally divided grooves (slots) 22 and vertically divided grooves (slots) 2 at fixed intervals,俾 Two or more impedance elements can be configured. The through hole 24 is provided in the horizontally divided groove 22. A thin film top electrode layer 25, typically made of Au, is formed on the top surface of the base 21, Cross the horizontal dividing groove 22 and be located on both sides of the through hole 24 (step B). Then, a thin-film bottom electrode layer (not shown), typically made of Au. Page 4 This paper applies Chinese national standards. (CNS M4 specifications (210X29? Public) Order

I I 五 5 ο 1 409264 A7 ________B7 發明説明(l) ~ ,係形成於該基體21的底表面上,在對應於該頂電極層 25的位置(步驛c)。 典型地由NiCr製成的一薄膜阻抗層26係形成於該基 體21的整個頂表面上(步驟D)。 該薄膜阻抗層26然後係利用微影技術蝕刻,俾可遺留 該薄膜阻抗層26連接至該頂電極層25的一部份,以形成 —阻抗27的圖型(步驟E)。 藉著如YAG雷射般的手段,該阻抗係被校正來把該阻 抗27調整到一指定值(步驟F) β , 典型地由環氧樹脂製成的一樹脂塗膠係被印刷,俾可完 整地覆蓋一調整阻抗28,而然後被固化來形成一保護層 2 9 (步驟G)。 該基體21然後係首先沿著該水平分割凹槽22切割(步 驟Η)。由Ni系統製成的薄膜側電極層31係藉著如濺鍍般 的手段形成於該初步分割之基體30的切割表面上(步驟工) 。在這裡,該側電極層31係僅形成於該初步分割之基體 30的切割表面上’不需在把相鄰之電極分隔之貫孔24的 側表面上形成側電極層3 1。 據此’在形成該侧電極層31之前,一抗蝕劑係施加 至該等貫孔24的侧表面,而該抗蝕劑係在藉由如升空 (lift-off)法般之手段濺鍍一薄Ni膜之後被移去,俾可 僅形成該側電極層31於該切割表面上。 接著’該基體,在側電極層被形成之後,係沿著該等垂 直分割凹槽23 (第二次分割)切割來做成基體塊(步驟j)。 第5頁 冬紙張尺度適用中國國家標準(CNS) M規格(210><2„公麓)I I 5 5 ο 1 409264 A7 ________B7 Description of the invention (l) ~ is formed on the bottom surface of the substrate 21 at a position corresponding to the top electrode layer 25 (step c). A thin-film resistive layer 26, typically made of NiCr, is formed on the entire top surface of the substrate 21 (step D). The thin-film resistive layer 26 is then etched using a lithographic technique, so that a portion of the thin-film resistive layer 26 connected to the top electrode layer 25 may be left to form a pattern of the impedance 27 (step E). By means such as a YAG laser, the impedance system is corrected to adjust the impedance 27 to a specified value (step F) β, and a resin-coated system typically made of epoxy resin is printed. An adjusted impedance 28 is completely covered and then cured to form a protective layer 29 (step G). The base body 21 is then first cut along the horizontal dividing groove 22 (step Η). The thin-film-side electrode layer 31 made of the Ni system is formed on the cut surface of the preliminary divided substrate 30 by a sputtering-like method (step process). Here, the side electrode layer 31 is formed only on the cut surface of the preliminarily divided substrate 30 ', and it is not necessary to form the side electrode layer 31 on the side surface of the through hole 24 separating the adjacent electrodes. Accordingly, before the side electrode layer 31 is formed, a resist is applied to the side surfaces of the through holes 24, and the resist is sputtered by means such as a lift-off method After a thin Ni film is plated and removed, the side electrode layer 31 can be formed only on the cut surface. Next, the substrate is cut along the vertical division grooves 23 (second division) to form a substrate block after the side electrode layer is formed (step j). Page 5 Winter paper standards are applicable to Chinese National Standards (CNS) M specifications (210 > < 2 „Gonglu)

A7 ~ ----------- B7 五、發明説明(?) -一 最後,一電極電鍍層33係形成於一基體塊32之頂電 極層25、底電極層、與侧電極層31的整個表面上(步驟κ) 〇 然而在1知技藝中,在施加抗钱劑至該等貫孔24的 5步驟中,該抗蝕劑係會因偏向而無法完全施加至該等貫孔 24的側表面。結果,電極材料在形成側電極層31時會附 | 於該等貫孔24之側表面的一部份,如在第5圖中所顯示般 ,電極材料溢出物38 β這會導致在電極之間的短路或者在 焊接期間的焊接橋 } 本發明的電阻器製造方法包含如下之步驟:形成一個以 I上的頂電極層於一矩形基體的頂表面上;形成至少一個阻 ! 抗層俾可與該一個以上的頂電極層電氣地連接;形成一保 ; 護層俾可至少覆蓋該阻抗層;形成一侧電極層於該基體的 j 一側表面上俾可與該頂電極層電氣地連接;及藉著移去該 j :15 基體和該側電極層的一部份來將該等相鄰的頂電極層分開 丨 在這製造方法中’該基體的一部份係在形成該側電極層 : ! ; 之後被移去俾可於相鄰的電極之間產生一個將該等頂電極 ; 層分開的凹面。據此,本發明的電阻器製造方法消除電極 |20 材料附於該凹面的可能性,防止在相鄰電極之間的短路及 j 在焊接期間焊接橋的出現。 丨 j 第1圖係描繪本發明第一實施例之電阻器製造方法的 | 流程圖, I 第2圖係描繪本發明第二實施例之一側電極層之形成」 第6頁 不紙張尺度適用中國國家標率(CMS ) A4规格(210X297公楚) 409204 A7 -----〜_______ B7 五、發明説明(扛) 一----- 的立體圖; 第3圖係插繪一凹面之形成的立體圖; 第4圖係插繪習知之電阻器製造方法的流程圖;及 第5圖係習知電阻器的立體圖。 5 第一實施 本發明第一實施例的電阻器製造方法係配合圖式作說明 如在第1圖中所顯示般,由具有良好抗熱與絕緣性之 96%鋁製成的—片狀基體1係被提供,而且該基體1的表 面係以固定間隔由一水平分割凹槽(缝隙)2和垂直分割凹 槽(缝隙)3分割(步驟 在把一導電塗膠’像主要包含Au的有機金屬般,網版 印刷到該基體1橫越該水平分割凹槽2的頂表面上之後, 該基體1係在一輸送式持續烘烤爐中以85〇°c烘烤45分鐘 來形成一薄膜頂電極層4(步驟B)。 利用相同的方法’一薄Au膜係被形成於該基體1的底 表面上’於一對應於該頂電極層4的位置,作為一底電極 層(圖中未示)(步驟C)。 然後,一薄膜阻抗層5,典型地由NiCr製成,係被濺 鐘至該基體1的整個頂表面上(步驟D)。一阻抗6係藉著 利用微影技術银刻該薄膜阻抗層5來被形成,俾可遺留連 接至該頂電極層4之薄膜阻抗層的一部份。為了穩固阻抗 6,熱處理係以大約300至400°C施加至該基體1大約5 至6小時(步驟E)。 第7頁 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) -h--I . \ I HI —III 'til ·- i - i ! ·ίί- I 1^^^ Hr— (請先閱讀背面之注意事項再頁) -、11 線 409264 A 7 B7 五、發明説明($ ) 5 10 15 經濟部中央標準局員工消費合诈杜印製 20 接著…修整凹職_咖雷射來設置在該阻抗s 上以調整該阻抗到一指定值(步驟F)。 -樹脂塗膠,典型地由環氧樹脂製成,然後係被網版印 刷來覆蓋整侧整阻抗7。該絲m料持續固 匕爐内以大約2GGCU化大約3Q分鐘來牢牢地將該樹脂塗膠勸附至該基體:L上並j_形成—具有大約之厚度的 保護層8 (步驟G)。 該基體1然後係沿著該水平分割凹槽2切割來形成一 初步分割的基體9 (步驟H)。 在該初步分割之基體9之兩端的側表面上’一薄Ni系 統或者Cu系統金屬薄膜係被濺鍍來形成一電氣地連接該頂 電極層4與該底電極層的側電極層10 (步驟工)。 接著,形成於該初步分割之基體9上之相鄰頂電極層4 之兩端之側表面上的該侧電極層10和該初步分割之基體9 的一部份係藉由切割來被移去,以形成一凹面1]^ (步驟J) Q 該才刀步分割的基體9係沿著垂直分割凹槽3切割來形 成基體塊I2 (步驟K) » 最後’該頂電極層4、底電極層、與側電極層1〇的表 面係以鎳電鍍,而然後被焊接來形成一電極電鍍層13(步 隸L)。 就本發明的第一實施例而言,一凹面係在形成該側電極 層之後藉著移去該基體的一部份來被產生,俾可電氣地分 隔該等相鄰的電極。據此,沒有電極材料附於該凹面,堅 讀 先 閱 讀 背 面 之 注 意 事 項 再 i 訂 )線 第8頁 4·、.,民張以適財關家'縣(C,NS )从規格(21()><297公翁) 409264 經濟部中央標準局員工消費合谇社印氧 A7 B7五、發明説明(>b ) ' ' 固電氣絕緣並且防止在相鄰之電極之間的短路。在焊接期 間焊接橋的出現亦可以被防止〇再者,絕緣因抗银劑殘留 在凹面之側表面上的降級係能夠被防止,因為沒有抗钮刻 係施加在本實施例中。 5 在該第—實施例中,切割係被採用來藉著移去該基體的 一部份來形成該凹面。然而,相同的目的係能夠以其他的 方法來達成,像利用雷射光束的氣化般。 本實施例亦說明利用一薄金屬膜阻抗作為阻抗材料來形 成一電阻器的情況。這並不是限制本發明用於阻抗的材料 10 °例如’厚薄阻抗亦能夠被使用於形成本發明的電阻器。 這樣係使得可以產生具有高精準阻抗的電晶器β 該第一實施例亦使用在其之表面上具有分割凹槽的片狀 基體1。然而’沒有凹槽的基體亦係可以應用的。 本實施例亦說明當有兩個獨立之阻抗在一單一晶片(稱 15 為雙阻抗晶片)中時的情況’如在第1圖中所顯示般。然而 ,具有三個或者更多個阻抗的電阻器(三阻抗晶片或以上) 或者具有共享一共用端電極之平行阻抗的電阻器亦能夠利 用本發明製造。此外’如果一電阻器具有兩個或更多個電 極的話,包括一電容器的一組合被動元件能夠被製造,獲 2 0 得相同的效果β 在本實施例中,該侧電極層係藉由濺鍍來形成。然而, 像真空氣化、離子電鍍、與熱喷灑般的其他薄膜形成方法 亦可以被使用來形成該側電極層以達成相同的效果〇 第二實施例 第9頁 (諳先間讀背面之注意事項再^^本貫) • 1-3» J*— 裝- ,1Τ 線 表纸張尺度適用中國國家梯準(CNS ) Α4规格(210X 297公釐) 409264 A7 B7 五、發明説明 5 10 15 經 濟 ▲ 祿 準 局 貝 工; 消 f ! 合丨 社i 印i t I 1 20 本發明第二實施例的電阻器製造方法係配合第2和3 圖作說明》 在這實施例中,該電阻器製造方法大部份係與在第工 圖中所示之第一實施例的相同β唯一與第—實施例之那些 不同的細節,即,步驟工和步驟』,係緊接在後配合第2 和3圖作說明。 f先,該初步分割的基體9係如第一實施例般根據在 第1圖所示之相同的步驟A至H來產生。 在步驟I中,如在第2圖中所顯示般,數個初步分割 的基體9係被堆疊在一基體固持器14上。然後,一薄沉土 系統金屬臈被濺鍍至該初步分割之基體9的侧表面上,形 成該侧電極層10 ,俾可電氣地連接該頂電極層4和該底電 極層。 在步驟J中,該凹面係藉由切割形成於該初步分割 之基體9上之相鄰頂電極層4之兩端之侧表面上之側電極 層和該初步分割之基體9的一部份來被產生。在這裡,如 在第3圖中所顯示般,有該側電極層1〇形成於其上的兩個 或更多個初步分割的基體9係被堆叠而且這些初步分割之 基體9之兩端的兩個或更多個側表面係同時以相等的間距 切割β就切割一個以上的區域而言,一多刀片切割器係被 使用,該切割器的兩個或者更多個刀片係設定到一指定相 等的間距。 在第1圖中所示的步驟κ和L然後被執行,俾可製成 本實施例的電阻器。 (讀先聞讀背面之注意事項再本頁) 裝_1 訂--- 線----^丨_ 第10頁 各紙張尺度適州中遇國冬襻翠dNS ) A4規格(2!0X297公釐 409264 at --- -B7_ 五、發明説明(^ } ~ 在該第二實施例中,該侧電極層係一次形成在一個以上 之相步分割的基體上,而然後在相鄰電極間的凹面係同時 (諳先閱讀背面之注意寧項再? n. It. 形成在一個以上之初步分割的基體上,據此,它致使有效 率的生產’並且藉孝消除電極材料附於該凹面上來防止在 5相鄰電極間之短路的發生。在焊接期間焊接橋的出現亦能 夠被防止。 此外,藉著同時形成一個以上的凹面在一個以上之勒步 分割的基體上,凹面之尺寸的準確性能夠被提升來在焊接A7 ~ ----------- B7 V. Description of the invention (?)-Finally, an electrode plating layer 33 is formed on the top electrode layer 25, the bottom electrode layer, and the side electrodes of a base block 32. On the entire surface of the layer 31 (step κ). However, in the first technique, in the 5 steps of applying the anti-money agent to the through holes 24, the resist system cannot be completely applied to the through holes due to the bias. The side surface of the hole 24. As a result, the electrode material is attached to a part of the side surface of the through-holes 24 when forming the side electrode layer 31. As shown in FIG. 5, the electrode material overflows 38 β, which results in between the electrodes. Short circuit or welding bridge during welding} The resistor manufacturing method of the present invention includes the following steps: forming a top electrode layer above I on the top surface of a rectangular substrate; forming at least one resistance! The one or more top electrode layers are electrically connected; forming a protection; a protective layer 俾 may cover at least the impedance layer; forming a side electrode layer on the surface of the j side of the base 俾 may be electrically connected to the top electrode layer; And separate the adjacent top electrode layers by removing the j: 15 substrate and a part of the side electrode layer. In this manufacturing method, 'a part of the substrate is formed to form the side electrode layer. :!; After being removed, a concave surface separating the top electrodes can be created between adjacent electrodes. Accordingly, the resistor manufacturing method of the present invention eliminates the possibility that the electrode | 20 material is attached to the concave surface, preventing short circuits between adjacent electrodes and the occurrence of a solder bridge during welding.丨 j FIG. 1 is a flow chart depicting a method for manufacturing a resistor according to a first embodiment of the present invention, I, FIG. 2 is a graph illustrating the formation of a side electrode layer according to a second embodiment of the present invention. China National Standards (CMS) A4 specification (210X297 Gongchu) 409204 A7 ----- ~ _______ B7 V. Description of the invention (carrying) A ----- 3D view; Figure 3 shows the formation of a concave surface FIG. 4 is a flowchart of a conventional resistor manufacturing method; and FIG. 5 is a perspective view of a conventional resistor. 5 First implementation The method of manufacturing a resistor according to the first embodiment of the present invention is explained with reference to the figure. As shown in FIG. 1, it is made of 96% aluminum with good heat resistance and insulation—a sheet-like substrate. 1 is provided, and the surface of the substrate 1 is divided by a horizontally divided groove (gap) 2 and a vertically divided groove (gap) 3 at a fixed interval (the step is to apply a conductive adhesive like an organic material mainly containing Au After being printed on a metal plate, the substrate 1 crosses the top surface of the horizontal dividing groove 2 and the substrate 1 is baked at 85 ° C for 45 minutes in a continuous baking oven to form a film. Top electrode layer 4 (step B). Using the same method, a thin Au film system is formed on the bottom surface of the substrate 1 at a position corresponding to the top electrode layer 4 as a bottom electrode layer (in the figure) (Not shown) (step C). Then, a thin film resistive layer 5, typically made of NiCr, is splashed on the entire top surface of the substrate 1 (step D). An impedance 6 is obtained by using lithography Technical silver engraved the thin film resistance layer 5 to be formed, and may be left connected to the top electrode layer Part of the thin film resistance layer of 4. In order to stabilize the resistance 6, heat treatment is applied to the substrate 1 at about 300 to 400 ° C for about 5 to 6 hours (step E). Page 7 This paper size applies Chinese national standards ( CNS) A4 specification (210X297 mm) -h--I. \ I HI —III 'til ·-i-i! · Ίί- I 1 ^^^ Hr— (Please read the precautions on the back first)- , 11 line 409264 A 7 B7 V. Description of the invention ($) 5 10 15 Employee consumption fraud report printed by the Central Standards Bureau of the Ministry of Economic Affairs 20 Then ... Trim the recession_ coffee laser to set on the impedance s to adjust the impedance To a specified value (step F).-Resin coated, typically made of epoxy resin, and then screen-printed to cover the entire side and the entire impedance 7. The silk material is continuously fixed in the furnace at approximately 2GGCU. It took about 3Q minutes to firmly adhere the resin to the substrate: L and j_form—a protective layer 8 having a thickness of approximately (Step G). The substrate 1 was then divided along the horizontal dividing groove 2 is cut to form a preliminary divided base 9 (step H). On the side surfaces of both ends of the preliminary divided base 9 'a thin Ni system Alternatively, the Cu system metal thin film is sputtered to form a side electrode layer 10 electrically connecting the top electrode layer 4 and the bottom electrode layer (step process). Next, adjacent tops formed on the preliminary divided substrate 9 are formed. A part of the side electrode layer 10 and the preliminary divided substrate 9 on the side surfaces at both ends of the electrode layer 4 are removed by cutting to form a concave surface 1] ^ (Step J) Q The substrate 9 divided by steps is cut along the vertical dividing groove 3 to form a substrate block I2 (step K) »Finally, the surface of the top electrode layer 4, the bottom electrode layer, and the side electrode layer 10 is plated with nickel. Then, it is welded to form an electrode plating layer 13 (step L). In the first embodiment of the present invention, a concave surface is generated by removing a part of the substrate after the side electrode layer is formed, and the adjacent electrodes can be electrically separated. According to this, no electrode material is attached to the concave surface, read the precautions on the back first, and then i)) Page 8 4 ·,., Min Zhang Yi Shi Guan Guan 'County (C, NS) from the specifications (21 () > < 297 princes) 409264 Employees of the Central Standards Bureau of the Ministry of Economic Affairs, Consumers' Printing Co., Ltd. Printed Oxygen A7 B7 V. Description of the invention (&b; b) '' Solid electrical insulation and prevent short circuit between adjacent electrodes. The occurrence of solder bridges during soldering can also be prevented. Furthermore, the degradation of the insulation due to the anti-silver agent remaining on the side surface of the concave surface can be prevented because no anti-knock system is applied in this embodiment. 5 In the first embodiment, a cutting system is employed to form the concave surface by removing a part of the substrate. However, the same goal can be achieved in other ways, like using vaporization of a laser beam. This embodiment also illustrates the case where a resistor is formed using a thin metal film impedance as a resistance material. This is not to limit the material used in the present invention for impedance. For example, 'thickness' can also be used to form the resistor of the present invention. This makes it possible to produce a transistor β with a high precision impedance. This first embodiment also uses a sheet-like substrate 1 having a division groove on its surface. However, a substrate without a groove is also applicable. This embodiment also illustrates the case when there are two independent impedances in a single chip (referred to as a 15-impedance chip) as shown in FIG. However, resistors with three or more impedances (three-impedance wafers or more) or resistors with parallel impedances sharing a common terminal electrode can also be manufactured using the present invention. In addition, 'if a resistor has two or more electrodes, a combined passive element including a capacitor can be manufactured to obtain the same effect as 20. In this embodiment, the side electrode layer is formed by sputtering. Formed by plating. However, other thin film forming methods such as vacuum gasification, ion plating, and thermal spraying can also be used to form the side electrode layer to achieve the same effect. Second Embodiment, page 9 Note again ^^ Ben Guan) • 1-3 »J * — installed-, 1T wire table paper size applies to China National Standards (CNS) Α4 specifications (210X 297 mm) 409264 A7 B7 V. Description of invention 5 10 15 Economy ▲ Luzhun Bureau Shellfisher; eliminate f! Co., Ltd. i it I I 20 20 The resistor manufacturing method of the second embodiment of the present invention is explained with reference to Figures 2 and 3. In this embodiment, the resistor Most of the manufacturing methods of the device are the same as those of the first embodiment shown in the first drawing, and the only details that are different from those of the first embodiment, that is, the steps and steps are described in the following. Figures 2 and 3 are for illustration. f First, the preliminary divided substrate 9 is produced according to the same steps A to H as shown in Fig. 1 as in the first embodiment. In step I, as shown in Fig. 2, a plurality of preliminary divided substrates 9 are stacked on a substrate holder 14. Then, a thin sinker system metal 臈 is sputtered onto the side surface of the preliminary divided substrate 9 to form the side electrode layer 10, and the 俾 can electrically connect the top electrode layer 4 and the bottom electrode layer. In step J, the concave surface is formed by cutting a side electrode layer on a side surface of two ends of two adjacent top electrode layers 4 formed on the preliminary divided substrate 9 and a part of the preliminary divided substrate 9 Was produced. Here, as shown in FIG. 3, two or more preliminarily divided substrates 9 having the side electrode layer 10 formed thereon are stacked and two of two ends of the preliminarily divided substrates 9 are stacked. One or more side surfaces are cut simultaneously at equal intervals. For cutting more than one area, a multi-blade cutter is used, and two or more blades of the cutter are set to a specified equal Pitch. The steps? And L shown in Fig. 1 are then performed, and the resistor of this embodiment can be made. (Read the notes on the back and read this page and then on this page) Pack _1 Order --- Thread ---- ^ 丨 _ Page 10 Each paper size Shizhou Zhongyu Guoyu Dongcui dNS) A4 size (2! 0X297 409264 at --- -B7_ V. Description of the Invention (^) ~ In this second embodiment, the side electrode layer is formed on more than one phase-divided substrate at a time, and then between adjacent electrodes The concave surface is at the same time (谙 Please read the note on the back side first? N. It. Is formed on more than one preliminarily divided substrate, according to which, it leads to efficient production 'and eliminates the electrode material attached to the concave surface Come up to prevent the occurrence of short circuit between 5 adjacent electrodes. Welding bridges can also be prevented during welding. In addition, by forming more than one concave surface at the same time on the substrate divided by more than one step, the size of the concave surface Accuracy can be improved during welding

期間獲得自我對準的效果β , 養J ι〇 由於不需事先提供凹面在基體上,本發明之電阻器製造 | 方法因此使製造基體時能以較簡單的模具結構達成β這樣 | 方便了製造設備的維護,得到基體之低成本製作的結杲。 | 在本發明的實施例中,該凹面係同時形成於該等基體之j ^ 兩端之側表面之一個以上的區域上β然而,它亦能夠一個| i 15 —個地形成。 | ! ; jThe self-aligning effect β is obtained during the period. Since the substrate does not need to be provided with a concave surface on the substrate in advance, the resistor manufacturing method of the present invention therefore enables β to be achieved with a simpler mold structure when manufacturing the substrate. This facilitates manufacturing The maintenance of the equipment results in low-cost production of substrates. | In the embodiment of the present invention, the concave surface is simultaneously formed on more than one area β of the side surfaces at both ends of j ^ of the substrates. However, it can also be formed one by one | i 15. |!; J

元件標號對照表 I 經濟部中央標準局舅工消费合作.社印製 1 21 基體 22 水平分割凹槽 S )線 23 垂直分割凹槽 24 貫孔 I | 25 薄膜頂電極層 26 薄膜阻抗層 .1 20 27 阻抗 28 調整阻抗 29 保護層 30 初步分割的基體 ! 31 側電極層 32 基體塊 1 33 電極電鑛層 1 基體 1 2 水平分割凹槽 3 垂直分割凹槽 I i ! ! 1 第11頁 % ί i 不紙浪尺度適用屮國國家標翠(CNS ) Λ4規格(2丨0X297公廣、 五、發明説明 5 409264 A 7 B7 4 頂電極層 5 薄膜阻抗層 6 阻抗 7 調整阻抗 8 保護層 9 初步分割的基體 10 側電極層 11 凹面 12 基體塊 13 電極電鍍層 14 基體固持器 -ΤΛ8Ι. ΗΗΗΙ -_i > I -II*1- 1 1 J H ....... I m^i m • - (讀先間讀背面之注意事項再_本頁)Component reference table I. Machining and Consumer Cooperation of the Central Standards Bureau of the Ministry of Economic Affairs. Printed by the agency 1 21 Base 22 Horizontally divided grooves S) Line 23 Vertically divided grooves 24 Through holes I | 25 Thin film top electrode layer 26 Thin film resistance layer. 1 20 27 Impedance 28 Adjust impedance 29 Protective layer 30 Basically divided substrate! 31 Side electrode layer 32 Substrate block 1 33 Electrode ore layer 1 Substrate 1 2 Horizontal split groove 3 Vertical split groove I i!! 1 Page 11% ί i The paper scale is applicable to the national standard Cui (CNS) Λ4 specifications (2 丨 0X297). V. Description of the invention 5 409264 A 7 B7 4 Top electrode layer 5 Thin film impedance layer 6 Impedance 7 Adjust impedance 8 Protective layer 9 Preliminarily divided substrate 10 Side electrode layer 11 Concave surface 12 Substrate block 13 Electrode plating layer 14 Substrate holder-TΛ8Ι. ΗΗΗΙ -_i > I -II * 1- 1 1 JH ....... I m ^ im • -(Read the notes on the back first, then _this page)

1T 經濟部ώ·-央搮準局員二消費合作社印衮 第12頁 本紙張尺度適用中國國家標準i CMS ) A4規格(210X297公釐 r - - - - I - I _ »1T Ministry of Economic Affairs · -Central Bureau Associate Member of the Second Consumer Cooperative Co., Ltd. Page 12 This paper size is applicable to the Chinese national standard i CMS) A4 size (210X297 mm r----I-I _ »

Claims (1)

A8 BS C8 m 409264 六、申請專利範圍 1. 一種用於製造電阻器於一具有一頂表面和一側表面之基 體上的方法,該方法包含如下之步驟: 形成數個頂電極於該基體的頂表面上; 形成至少一個與該數個頂電極電氣地連接的阻抗層 5 10 15 經濟部_央標隼局員工消費合作社印製 20 r 形成一至少覆蓋該阻抗層的保護層; 形成一側電極層於該基體的側表面上,該側電極層 係與該數個頂電極電氣地連接;及 藉著移去該基體和該側電極層的一部份來將該等相 鄰的頂電極層分開。 2. 如申請專利範圍第.1項所述之瓜逆製迭趟方法, 其中,該侧電極層是為一種從包含Ni與組別中選 技 擇出來的金屬,.而且係藉著使用薄膜沉積形成。 3. 如申請專利範圍第2項所述之4·谢製.选方法, 其中,該薄膜沉積法是為一種從濺鍍、真空氣化、離子 電鍍、與熱喷灑之組別選擇出來的方法。 4.如申請專利範圍第1項所述之爾:啦器劫方法, 其中,該基體和該側電極層之數個部__同時被移去。 5. 如申請專利範圍第4項所述之毋兹阳器择方法, 其中,該基體和該側電極層之數個部*以相等的間距 同時被移去。 1¾.¾.] j.i 6. 如申請專利範圍第1項所述之用把1迻電喊:忘;的方法’ 其中,係有側電極層在該基體的相對側上丨該基體 和該等相對之側電極層的部份係同時被移去 第13頁 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 申請專利範圍 ABCD 7.如申請專利範圍第1項所述之连^: 趟·方法 其中,該基體和該側電極層係以切割被移去 8.如申請專利範圍第5項所述之舜游 巻=捧方法 經濟部中央標準局員工消費合作社印製 其中,該移去係由利用多刀片的切割方g作成。 5 9. 一種用於製造電阻器於一具有垂直與水平分割凹槽及一 頂表面之基體上的方法,該方法包含如下之步驟: 在一基體上形成數個橫越一水平凹槽的頂電極; 形成至少一個阻抗層於該基體的一頂表面上 與該數個頂電極電氣地連接; 10 沿著該水平凹槽分割該基韙; 形成一側電極層於該基體的一分割側表面上 與該數個頂電極電氣地連接; 藉著移去該基體和該側電極層的一部份來將該等相 鄰的頂電極層電氣地分開;及 15 沿著垂直凹槽分割該基體。 10·如申請專利範圍第9項所述之和敢製阿器=綠方法 ,其申,已沿著該水平凹槽分割的數體係被堆疊 . -:;-! 一起,而且該側電極層係形成於該數舉上。 11. 如申請專利範圍第9項所述之爾gfc的·方法 20 ,其中,數個基體,在其上係形成有該側電極層,係 被堆疊一起而且該基體和該侧層的一部份係自該 數個基體的每一個移去。 说: i· .· 1 12. 如申請專利範圍第9項所述之製-造電阻器的方法 ,其令,數個基體各已沿著該^.|^凹槽分割並且具有 俾可 俾可 In T - 8 (請先閱讀背面之注意事項再_本頁) 訂: 第14頁 本紙張尺度適用中國國家標準(CNS ) Μ規格(210X297公釐) 409264 六、申請專利範圍 一側電極層形成於其上,該數個基體被堆疊一起而且 該基體和該側電極層的一部份係從該數個基體的每一 個移去^ (請先閱讀背面之注意事項再填 3頁) 裝· 訂 經濟部中央標準局員工消費合作社印裝 第15頁 本紙浪尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐)A8 BS C8 m 409264 6. Scope of patent application 1. A method for manufacturing a resistor on a substrate having a top surface and a side surface, the method includes the following steps: forming a plurality of top electrodes on the substrate On the top surface; forming at least one impedance layer electrically connected to the top electrodes 5 10 15 printed by the Ministry of Economic Affairs and the Central Standards Bureau employee consumer cooperative to form a protective layer covering at least the impedance layer; forming one side An electrode layer is on a side surface of the substrate, and the side electrode layer is electrically connected to the top electrodes; and the adjacent top electrodes are removed by removing the substrate and a part of the side electrode layer The layers are separated. 2. As described in the patent application scope item 1.1, the side electrode layer is a metal selected from the group consisting of Ni and groups, and by using a thin film Deposition is formed. 3. As described in item 4 of the scope of the patent application, the method of selection and selection, wherein the thin film deposition method is selected from the group of sputtering, vacuum gasification, ion plating, and thermal spraying. method. 4. The method as described in item 1 of the scope of the patent application: the method for removing a device, wherein the substrate and the parts of the side electrode layer are removed at the same time. 5. The method according to item 4 of the scope of patent application, wherein the base body and the parts of the side electrode layer * are simultaneously removed at equal intervals. 1¾.¾.] Ji 6. As described in item 1 of the scope of the patent application, the method of shifting 1 to electricity is called: forget; the method ', wherein a side electrode layer is on the opposite side of the substrate 丨 the substrate and the like The part of the opposite electrode layer is removed at the same time. Page 13 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). The scope of patent application is ABCD 7. The connection described in item 1 of the scope of patent application ^: Method, where the substrate and the side electrode layer are removed by cutting 8. As described in the application scope of the patent No. 5 = Shun You method printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, This removal is made by a cutting g using a multi-blade. 5 9. A method for manufacturing a resistor on a substrate having vertically and horizontally divided grooves and a top surface, the method includes the following steps: forming a plurality of tops across a horizontal groove on a substrate An electrode; forming at least one impedance layer electrically connected to the top electrodes on a top surface of the substrate; 10 dividing the base substrate along the horizontal groove; forming a side electrode layer on a divided side surface of the substrate Are electrically connected to the plurality of top electrodes; electrically separate the adjacent top electrode layers by removing a portion of the substrate and the side electrode layer; and 15 divide the substrate along a vertical groove . 10 · As described in item 9 of the scope of the patent application, the sum dare to make a device = green method, which applies, the number system that has been divided along the horizontal groove is stacked.-:;-! Together, and the side electrode layer The system is formed on this number. 11. The method 20 of gfc described in item 9 of the scope of patent application, wherein a plurality of substrates on which the side electrode layer is formed are stacked, and the substrate and a part of the side layer are stacked together. The components are removed from each of the plurality of substrates. Said: i ··· 1 12. The method of manufacturing-making a resistor as described in item 9 of the scope of patent application, which makes several substrates have been divided along the ^. | ^ Groove and have 俾 可 俾Available In T-8 (Please read the precautions on the back first, then _ this page) Order: Page 14 This paper size applies Chinese National Standards (CNS) M specifications (210X297 mm) 409264 Six, patent application side electrode layer Formed thereon, the substrates are stacked together and the substrate and a part of the side electrode layer are removed from each of the substrates ^ (Please read the precautions on the back first and then fill in 3 pages). · Ordered by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Page 15 This paper applies the Chinese National Standard (CNS) A4 (210 X 297 mm).
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