TW408459B - Lead finger used in improving the wiring line connection - Google Patents

Lead finger used in improving the wiring line connection Download PDF

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Publication number
TW408459B
TW408459B TW088107462A TW88107462A TW408459B TW 408459 B TW408459 B TW 408459B TW 088107462 A TW088107462 A TW 088107462A TW 88107462 A TW88107462 A TW 88107462A TW 408459 B TW408459 B TW 408459B
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TW
Taiwan
Prior art keywords
finger
lead
tip portion
wire
lead frame
Prior art date
Application number
TW088107462A
Other languages
Chinese (zh)
Inventor
Kuang-Ho Liao
Tsung-Chieh Chen
Chuen-Jye Lin
Original Assignee
Vanguard Int Semiconduct Corp
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Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW088107462A priority Critical patent/TW408459B/en
Application granted granted Critical
Publication of TW408459B publication Critical patent/TW408459B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

There is disclosed a lead finger allocated on a lead frame to achieve the connection of wiring lines, which has the inclination tip portion. The inclination tip portion of said lead finger could form the horizontal angle smaller than 30 DEG with said lead finger in one stamping procedure. The ideal situation is that said inclination angle should be between 5 DEG to 30 DEG, and more ideal angle is between 5 DEG to 20 DEG. A wedge bond is formed to improve its thickness and the resisting ability to the thermal stress. When performing the thermal cycle testing between 150 DEG C and -65 DEG C in resisting the thermal stress, it has been decreased at least 20%, but the more ideal situation is to decrease 50%.

Description

五、發明說明（1) 4^645^ 本發明係有關於半導體裝置及其製造方法，更特別的 是，係有關於一種由導線連接一 f c晶粒至一引線框架 (lead frame )之指狀弓丨線（lead finger )，其中，該 才曰狀物於其項部面係有一傾斜之角度以改進其楔形鍵合 (wedge bond )之應力熱阻，以及該種半導體裝置之製造 方法。 於半導體裝置之製程中，有一個重要的步驟係在一積 體電路（integrated Circuit， IC )晶片或晶粒與外界之 間提供聯繫’此聯繫可藉由各種IC晶片之封裝方式而建 立’例如，導線於引線框架上連接此〗c晶片與指狀引線，（$ 或是利用倒裝晶片結合法（flip —chip )直接由球狀接合 物（solder bump)連接一1C晶粒與指狀引線….等等。導 線連接一 IC晶粒與一引線框架的連接過程已廣泛地使用於 _ 半導體裝置之封裝。 於此導線連接之程序中，首先係提供一由金屬薄片所 製成的引線框架如銅或銅合金；此引線框架係由一微影程 序以使許多指狀引線呈現由該引線框架之外框架朝向其中 心發射之圖形。於該引線框架之中心亦形成一晶粒板 (die paddle)，係為該引線框架之一較大片以提供放置 一 IC晶粒之基底。利用一化學性蝕刻製程以形成該多數個（ - .p 指狀引線，以致每一個指狀引線皆具有與該引線框架之外 框架結合的基底部分，以及朝著該内部之框架中心延仲的 尖端部分。此引線框架之尖端部分係於最後一個階段製 造，或機械性地壓縮以形成該尖端部分之特殊圖案，例V. Description of the invention (1) 4 ^ 645 ^ The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, it relates to a finger shape that connects a fc die to a lead frame by a wire. A lead finger, in which the object has an inclined angle on its neck surface to improve the stress thermal resistance of its wedge bond and the method for manufacturing the semiconductor device. In the manufacturing process of semiconductor devices, an important step is to provide a connection between an integrated circuit (IC) chip or die and the outside world. 'This connection can be established by various IC chip packaging methods.' The lead is connected to the lead frame on the lead frame, or the chip is connected with the finger lead ($ or a flip bump is used to directly connect a 1C die to the finger lead by a solder bump). … Etc. The process of connecting a IC die with a lead frame by wires has been widely used in the packaging of semiconductor devices. In this wire connection procedure, a lead frame made of metal foil is first provided Such as copper or copper alloy; this lead frame is made by a lithography process to make many finger leads present a pattern emitted from the frame outside the lead frame toward its center. A die plate (die) is also formed in the center of the lead frame. paddle) is a larger piece of the lead frame to provide a substrate for placing an IC die. A chemical etching process is used to form the plurality of (-.p finger leads, so that A finger lead has a base portion combined with the outer frame of the lead frame, and a tip portion extending toward the center of the inner frame. The tip portion of the lead frame is manufactured in the last stage, or is mechanically compressed To form a special pattern of the tip, for example

第4頁 ---10-8459 _ 五、發明說明（2) ' --Page 4 --- 10-8459 _ V. Description of the invention (2) ''-

如，此尖端部分一般係f曲形成一導線連接之 平坦部分。 牧m I 一自動導線連接程序經常用於提供在一 Ic晶粒 線框架間之電性連接，於此製程中，一高傳導性，细 導線，如用金所製之導線係用於結合其所達到之最低電阻 以連接該1C晶粒。一銲針，係為一導線連接裝置，與一-穿過其中之導線首先用於裝配一金導線於該10晶粒表面之 連接板上，然後至一指狀引線之尖端部分，因此形成一楔 形焊接及該指狀引線之尖端部分其階梯狀的頂部表面。在 形成此楔形焊接之程序間’此銲針的尖端係自動地截斷 Μ (cut off)該導線供應，以致其準備用於連結下一個連… 接板。於此指狀引線上所形成的楔形鍵結必須表示出所需 求之最小鍵結量，且更甚於此，其必須克服各種逆向之執 行I C封裝的環境》 - 此IC晶粒在導線連接至一引線框架之後，最適當係封 裝於一塑膠模製化合物，且此封裝之程序可藉放置該1(:晶 粒與該引線框架於一模製容器中，畏膠注入該模製器 械中而完成。一塑膠化合物如環& (e\^^ )，具有熔點 大約為175 °C接著注入該模製容器以形裝，此形成於 該連接導線與該指狀引線之間的楔形鍵結係因此直接暴露〇 於這樣高的溫度或是熱衝擊（thermal shock)下。在模 製程序完成之後’此模製封裝係由該模製容器移除，並降 溫至室内溫度。一高熱應力因此做用於封裝中之各種鍵結 位置，亦即，形成於該導線與該指狀引線之間的各種機形For example, the tip portion is generally formed as a flat portion connected by a wire. Mm I-an automatic wire connection procedure is often used to provide electrical connection between an Ic die wire frame. In this process, a highly conductive, thin wire, such as a wire made of gold, is used to combine it. The lowest resistance reached to connect the 1C die. A solder pin is a wire connecting device, and a wire passing therethrough is first used to assemble a gold wire on the connection board of the 10-grain surface, and then to the tip portion of a finger lead, thus forming a The wedge-shaped bonding and the stepped top surface of the tip portion of the finger lead. During the process of forming the wedge-shaped weld, the tip of the solder pin automatically cuts off the wire supply so that it is ready to be used to connect the next connector ... The wedge-shaped bond formed on the finger lead must indicate the minimum amount of bond required, and more than that, it must overcome various reverse environments for performing IC packaging. "-This IC die is connected to a wire After the lead frame, it is most suitable to be packaged in a plastic molding compound, and the packaging process can be completed by placing the 1 (: die and the lead frame in a molding container, and injecting the gel into the molding device. A plastic compound, such as ring & (e \ ^^), has a melting point of about 175 ° C and is then injected into the molding container to be shaped. This is a wedge-shaped bond formed between the connection wire and the finger lead Therefore, it is directly exposed to such a high temperature or thermal shock. After the molding process is completed, 'the molding package is removed from the molding container and cooled to room temperature. A high thermal stress is therefore done Used for various bonding positions in a package, that is, various shapes formed between the wire and the finger lead

五、發明說明（3) it突然的溫度改變所造成’甚至是由環繞該楔形鍵 化合物的收縮所造成。當楔形鍵結並不隨一高鍵 而形成，此鍵結|常會失敗而成一現象稱為"第二 能喪^路,’ （SeC〇nd b〇g〇Pen)，因而造成1C封裝之功V. Description of the invention (3) It is caused by sudden temperature change 'even caused by the shrinkage of the compound surrounding the wedge bond. When the wedge-shaped bond does not form with a high bond, this bond will often fail and become a phenomenon called " Second Energy Path, '(SeC〇nd b〇g〇Pen), thus resulting in the 1C package. Work

JEDPP為&了確定IC製造封装之可靠度，其測試係在一稱做 献、B 週期測試之標準之可靠度測試下進行。於此JEDEC G^測試中，係產生一由15(rC到-65^之溫度負載於一 ，、以剩試其對熱應力之效應。許多丨c封裝並無法通過 項測試係因為形成於連接導線與該指狀引線之楔形鍵結\ 效’亦即由於此第二鍵結開路缺陷β 第1圖顯示一放大的習知之引線框架i 〇、一〗c晶粒 1 2 ;以及一散熱片丨4其透視圖；此引線框架i 〇係由一外框 ^ 架丨6 ’其具有複數由外框架16延伸至中心之指狀引線 20 ’ A每個引線皆配置一尖端部分22之構造所構成。由圖 中可以看出用於支持一晶粒板26之該指狀引線2〇與晶粒支 持板24係以一坡度形成，因此該晶粒板26所在之平面係低r 於該外框架16所在之平面。此尖端部分22係於一 _查程序’ 間形成’而成為一製造區域其所在之平面與該晶粒板26相 同，此晶粒板26尚與孔32 —同提供以利用黏著裝置而較簡 易地裝配該1C晶粒12至該散熱片14上。且該引線框架1〇 — 般係由一金屬薄片鋼合金或鐵合金而形成β 於第1Α圖中所示之係為引線框架1〇之放大截面圖，其 中，係表在一導線連接與一塑膠封裝程序之後的1C晶粒12JEDPP & determined the reliability of the IC manufacturing package, and its test was performed under a standard reliability test called a contribution, B-cycle test. In this JEDEC G ^ test, a temperature load of 15 (rC to -65 ^) was generated to test the effect on thermal stress. Many c-packages fail the test because they are formed on the connection. The wedge-shaped bond between the wire and the finger lead is effective because of the open defect of the second bond β. Figure 1 shows an enlarged conventional lead frame i 0, a c grain 1 2; and a heat sink丨 4 its perspective view; this lead frame i 〇 is an outer frame ^ frame 丨 6 ′ has a plurality of finger leads 20 ′ extending from the outer frame 16 to the center A each lead is configured with a tip portion 22 It can be seen from the figure that the finger leads 20 for supporting a die plate 26 and the die support plate 24 are formed at a slope, so the plane where the die plate 26 is located is lower than the outside The plane on which the frame 16 is located. The tip portion 22 is formed during a search procedure to form a manufacturing area, and the plane on which it is located is the same as the die plate 26. The die plate 26 is also provided with the hole 32. It is easier to assemble the 1C die 12 to the heat sink 14 by using an adhesive device. The frame 10 is generally formed of a thin sheet of steel alloy or iron alloy. Β The enlarged cross-sectional view of the lead frame 10 shown in FIG. 1A is shown after a wire connection and a plastic packaging process. 1C Grain 12

第6頁 五、發明說明⑷ 40845B '~' — 以及散熱片14 ;該指狀引線20之尖端22係藉由一高傳導性 金屬導線34連接於1C晶粒12上之連接板（未顯示），且此 晶粒板26與該散熱片14首先藉由黏著層18接合在一起。而 此黏著層18可由一充滿熱硬化性材料之金屬質點的黏薯物 形成，以改善1C晶粒1 2之熱轉移。此導線連接之組合接下= 來則放置入一塑膠模製容器中（未顯示），並注入一塑膠 模製化合物36至該容器中以形成IC封裝。 在第1B與第1C圖中所示係為在該ic晶粒12與該指狀引 線2 0間之導線連接其形成的放大詳細圖示；如第π圖所 示’連接塾38係提供於該1C晶粒12之了員部表面28以在一广 咼傳導性金屬導線34與該指狀引線20之尖端部分22間提供一 一電子式連接。一藉連接導線42所形成的楔形鍵結4〇之更 詳細圖示，亦即一金導線係示於第lc圖；一導線接合球44 亦在該導線撞擊該連接墊38時，由一金導線所形成。而於 該尖端部分22上之階梯狀表面46形成之楔形鍵結4〇並無法 通過一熱循環測試係因為其高熱應力。 因此’本發明之目標在於提供一種引線框架以形成一 改善之導線連接ic封裝’其不杲有習知之導線連接IC封裝 的缺點或短處。 本發明之其他目標在於提供一種引線框架，係配置改（4 善之指狀引線，其可在連接一 IC晶粒之後通過一熱循環之 測試。 本發明之再一個目標在於提供一種引線框架，其配置 之指狀引線具有一尖端部分，且形成一傾斜表面，當由該5. Description of the invention 发明 40845B '~' — and heat sink 14; the tip 22 of the finger lead 20 is connected to the 1C die 12 by a highly conductive metal wire 34 (not shown) The die plate 26 and the heat sink 14 are first bonded together by an adhesive layer 18. The adhesive layer 18 may be formed of a sticky potato filled with metal particles of a thermosetting material to improve the thermal transfer of 1C grains 12. The combination of this wire connection is then placed into a plastic molding container (not shown), and a plastic molding compound 36 is injected into the container to form an IC package. 1B and 1C are enlarged detailed diagrams showing the formation of a wire connection between the ic die 12 and the finger lead 20; as shown in FIG. Π, 'connection 塾 38 is provided in The member surface 28 of the 1C die 12 provides an electronic connection between a broad conductive metal wire 34 and the tip portion 22 of the finger lead 20. A more detailed illustration of a wedge-shaped bond 40 formed by the connecting wire 42, that is, a gold wire is shown in FIG. 1c; a wire bonding ball 44 is also formed by a gold when the wire hits the connection pad 38 Formed by wires. The wedge bond 40 formed on the stepped surface 46 on the tip portion 22 did not pass a thermal cycle test because of its high thermal stress. Therefore, 'the object of the present invention is to provide a lead frame to form an improved wire-connected ic package' which does not suffer from the disadvantages or shortcomings of conventional wire-connected IC packages. Another object of the present invention is to provide a lead frame with a modified configuration (4 fingers), which can pass a thermal cycle test after connecting an IC die. Yet another object of the present invention is to provide a lead frame, which The configured finger lead has a tip portion and forms an inclined surface.

五、發明說明（5) ^ 指狀引線之水平面量測時，其夹角係小於30 β 。 依舊為本發明之其他目標係為提供一引線框架，其配 置有指狀引線，且該指狀引線之尖端部分係傾斜於一頂部 表面而形成一角度’當由該指狀引線之水平面開始量測 時，大約在5 °到2 0。之間。 本發明之再一個目標係為提供一積體電路封裝，其係 利用一配置有指狀引線的引線框架而使一 j c晶片連接於一 引線框架’其中，當由該指狀引線之水平面量測時，係與 每一指狀引線之尖端部分形成一角度，且其夾角係小於3〇 〇 〇 仍舊是本發明之其他目標係為提供一種積體電路封 裝，其IC晶片係連接於一引線框架，其中，該引線框架係 具有指狀引線且其尖端部分傾斜，因此在一金導線連接於 該傾斜尖端部分而形成一介面之後，一產生於介面間的熱 應力若與一沒有傾斜尖端表面之指狀框架所得到的熱應力 相比，係降低至少20%。 本發明之再一個目標係為提供一種在一引線框架與一 1C晶粒間建立電性連結的方法，其為提供一具有複數指狀 引線之引線框架’且每—指狀引線配置一具有坡度之尖端 部分’而該尖端部分之頂部表面與該引線框架之水平面的 夾角係小於30 ’並且藉由一高傳導性導線連接該具坡度 之尖端部分至該1C晶粒之連接墊。 依據本發明’係提供一種具有指狀引線的引線框架， 且該指狀引線具有傾斜之尖端部分，以達到改善之導線連 4〇um 五、發明說明（6) 接。 於一較佳實施例中，一配置有傾斜之尖端部分以改善 導線連接的指狀引線之引線框架提供包括—外柩架，其具 有複數條呈發射狀之指狀引線’且該指狀弓I線具有與外框 架整合之基底部分’以及一尖端部分，係由外向内延伸至 該引線框架之中心，且該尖端部分具有一頂部表面，其與 該引線框架水平面之夾角經量測係小於3 0。。 該引線框架之尖端部分具有一頂部表面，其與該引線 框架水平面之夾角經量測係在5 °到3 0 °之間，而指狀引 線之尖端部分亦具有一頂部表面，且最好是與該指狀引線广人 水平面之夾角經量測係約5 °到2 0 °之間。尖端部分之頂 部表面所成的角度係在一衝壓（st amp ing)過程中形成， 而該指狀引線之傾斜尖端部分則於一導線連接過程中與一 金導線相連接。此指狀引線之傾斜尖端部分在熱週期傳導 測試其於15CTC與-65 °C之間，亦降低了在一接續之連接金 導線與傾斜之尖端部分之間的熱應力作用至少2〇%。而該 指狀引線之尖端部分最好是降低熱應力50%，該引線框架 可由銅或銅合金材料、或者是鐵或鐵鎳合金材料所形成。 於本發明其他之較佳實施例中，一種積體電路晶片封 裝係連接該1C晶片至一引線框架上，其提供包括一具有複 數條由該框架發射出之指狀引線，且每一指狀引線具有一 傾斜的尖端部分，其與該指狀引線水平面之夾角經量測係 小於30 ° ; —1C晶片，於其頂部表面係提供複數連接墊； 複數條高傳導性之導線，係於每一指狀引線之傾斜尖端部V. Description of the invention (5) ^ When the horizontal level of the finger leads is measured, the included angle is less than 30 β. Still another object of the present invention is to provide a lead frame configured with finger leads, and the tip portion of the finger leads is inclined to a top surface to form an angle 'when starting from the level of the finger lead The measurement time is about 5 ° to 20 °. between. Another object of the present invention is to provide an integrated circuit package which uses a lead frame configured with finger leads to connect a jc chip to a lead frame. Wherein, when measured by the horizontal plane of the finger leads At that time, it forms an angle with the tip portion of each finger lead, and its included angle is less than 3,000. It is still another object of the present invention to provide an integrated circuit package whose IC chip is connected to a lead frame. Wherein, the lead frame has finger-shaped leads and its tip portion is inclined, so after a gold wire is connected to the inclined tip portion to form an interface, a thermal stress generated between the interface and a non-inclined tip surface The thermal stress obtained by the finger frame is reduced by at least 20%. Still another object of the present invention is to provide a method for establishing an electrical connection between a lead frame and a 1C die, which is to provide a lead frame having a plurality of finger leads, and each finger lead is provided with a slope. And the angle between the top surface of the tip portion and the horizontal plane of the lead frame is less than 30 ', and the sloped tip portion is connected to the 1C die connection pad by a highly conductive wire. According to the present invention, there is provided a lead frame having a finger lead, and the finger lead has an inclined tip portion to achieve an improved lead connection 40um. 5. Description of the invention (6). In a preferred embodiment, a lead frame provided with a slanted tip portion to improve the lead connection of a finger lead is provided including an outer frame having a plurality of emitting lead fingers and the finger bow. The I-line has a base portion that is integrated with the outer frame, and a tip portion that extends from the outside to the center of the lead frame, and the tip portion has a top surface. 3 0. . The tip portion of the lead frame has a top surface, and the angle between the lead frame and the horizontal plane of the lead frame is measured between 5 ° and 30 °, and the tip portion of the finger lead also has a top surface, and is preferably The angle between the finger lead and the wide horizontal plane is measured between about 5 ° and 20 °. The angle formed by the top surface of the tip portion is formed during a stamping process, and the inclined tip portion of the finger lead is connected with a gold wire during a wire connection process. The slanted tip portion of this finger lead was subjected to thermal cycle test between 15CTC and -65 ° C, and it also reduced the thermal stress effect between a connected gold wire and the slanted tip portion by at least 20%. The tip portion of the finger-shaped lead is preferably reduced by 50%, and the lead frame may be formed of copper or copper alloy material, or iron or iron-nickel alloy material. In other preferred embodiments of the present invention, an integrated circuit chip package is connected to the 1C chip to a lead frame, which includes a plurality of finger-shaped leads emitted from the frame, and each finger shape The lead has an inclined tip portion, and the angle between the horizontal plane of the lead and the finger lead is less than 30 °. The 1C chip is provided with a plurality of connection pads on its top surface. A plurality of highly conductive wires are attached to each lead. Slanted tip of a finger lead

第9頁 五、發明說明（7) 分與一相對應之晶片上的連接墊之間提供電性連接；以 一塑膠封裝化合物，用於封裝該引線框架與該ic晶片。 指狀引線之尖端部分與該指狀引線水平面之Z角經 測係約在5 °到20。之間，而此傾斜之尖端部分與指狀 線之水平面形成的角度係夠大，以在一高傳導性導線連 至該傾斜之尖端部分而形成一介面之後，在介面間所產生 的熱應力若與一非傾斜之尖端部分在〗75 t與_65七之間 導所做之熱循環測試得到的資料值相比，係降低至少 20%。此指狀引線可以藉由一蝕刻製程而形成，並且，該 傾斜之尖端部分可藉由一衝壓過程而形成。而引線框架^可 以藉由一蝕刻或衝壓製程由鋼或鋼合金、鐵或是鐵鎳合金 所形成；於每一傾斜尖端部分與一相對應之晶片上的連接 墊之間提供電性連接的高傳導性之導線係為金導線。 本發明更指出了一種在引線框架與一仄晶粒之間提供 電性連接的方法，包括下列步驟：首先提供一1(：晶粒，於 其頂部形成複數連接墊；再提供一引線框架’其具有複數 呈發射狀之指狀5丨線，且每一指狀引線之尖端部分係有坡 度。，並且其頂部表面與該指狀引線之水平面間形成一小於 30爽角’以及連接一高傳導性導線之第一末端至該IC晶 粒上的連接墊與第二末端至一對應的指狀引線之傾斜尖端 部分上。 此傾斜之尖端部分其頂部表面與該指狀引線水平面之 夾角經量測係約在5。到2tr之間而形成於該高傳導性 導線之第二末端與指狀引線上傾斜之尖端表面間之鍵結則Page 9 V. Description of the invention (7) Electrical connection is provided between connection pads on a corresponding chip; a plastic packaging compound is used to package the lead frame and the IC chip. The Z angle between the tip portion of the finger lead and the horizontal plane of the finger lead is measured at about 5 ° to 20 °. And the angle formed by the inclined tip portion and the horizontal plane of the finger line is large enough to generate a thermal interface between the interfaces after a highly conductive wire is connected to the inclined tip portion to form an interface If compared with the data obtained from the thermal cycle test of a non-inclined tip part between 75 t and _65 seven, it is at least 20% lower. The finger lead may be formed by an etching process, and the inclined tip portion may be formed by a stamping process. The lead frame ^ can be formed of steel or steel alloy, iron or iron-nickel alloy through an etching or stamping process; electrical connection is provided between each inclined tip portion and a corresponding pad on a corresponding wafer. Highly conductive wires are gold wires. The invention further indicates a method for providing an electrical connection between a lead frame and a stack of grains, including the following steps: first providing a 1 (: grain, forming a plurality of connection pads on top of it; and then providing a lead frame ' It has a plurality of finger-like lines that are radiating, and the tip portion of each finger-shaped lead is sloped. Moreover, the top surface of the finger-shaped lead forms a less than 30 cool angle with the horizontal plane of the finger-shaped lead and connects a high The first end of the conductive wire to the connection pad on the IC die and the second end to the inclined tip portion of a corresponding finger lead. The angle between the top surface of the inclined tip portion and the horizontal plane of the finger lead is The measurement is between about 5 to 2tr and is formed between the second end of the highly conductive wire and the inclined tip surface on the finger lead.

第10頁 五 '發明說明（8)—" 40 G4ίίίί 具一熱應力，至少與一非傾斜之尖端部分在150它與_651 之間傳導所獲得之指狀引線上的熱應力相比，係降低至少 。此方法更包括封裝丨c晶粒之步驟，該引線框架與該 两傳導性導線係於一塑膠模製框架中。且此方法更包括利 用衝麗過程以形成該指狀引線之具有坡度的尖端部分之步 驟。另外’此種方法更包括利用化學性蝕刻製程或機械 衝Μ製程於該引線框架中形成該指狀引線的步驟。 為讓本發明之上述目的、特徵、和優點能更明顯易 懂’下文特舉一較佳實施例，並配合所附圖式，作詳纟 明如下： 、'田說 圖式之簡單說明： 第1圖為一配置有指狀引線與一晶粒板之典型的弓丨線 框架與一 1C晶粒’及一散熱片之放大、透視圖； 、 第1Α圖為第1圖中所示之經導線連接程序後，化合物 封裝1C之放大、截面圖； 第1Β圖為在一 1C晶粒上之連接墊與一指狀引線之階 狀尖端部分所建立的習知之導線連接的放大、截面圖； 第1C圖為利用習知之方法，形成於一指狀引線之尖端 部分的楔形鍵結之側視圖； 第2圖為本發明形成於一指狀引線之傾斜尖端部分的 導線連接其放大、部分側視圖；以及/ 第3圖為一圖示，係顯示在一傾斜尖端部分上所減少 之熱應力對離開一指狀引線之距離圖示。/ 符號說明Page 5 (5) Description of the invention (8) —with a thermal stress, at least compared with the thermal stress on a finger lead obtained by conducting a non-inclined tip portion between 150 and _651, Department reduced at least. The method further includes a step of packaging the c die, and the lead frame and the two conductive wires are combined in a plastic mold frame. Furthermore, the method further includes the step of using a punching process to form a sloped tip portion of the finger lead. In addition, this method further includes a step of forming the finger-shaped lead in the lead frame by using a chemical etching process or a mechanical punching process. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and in conjunction with the accompanying drawings, the details are explained as follows: "A brief description of the Tian said schema: FIG. 1 is an enlarged and perspective view of a typical bow with a finger lead and a die plate, a wire frame, a 1C die, and a heat sink; and FIG. 1A is a diagram shown in FIG. After the wire connection procedure, the compound package 1C is enlarged and a cross-sectional view. FIG. 1B is an enlarged and cross-sectional view of a conventional wire connection established by a connection pad on a 1C die and a stepped tip portion of a finger lead. Figure 1C is a side view of a wedge-shaped bond formed at the tip portion of a finger lead using a conventional method; Figure 2 is an enlarged, partial view of a wire connected to the inclined tip portion of a finger lead according to the present invention; Side view; and / FIG. 3 is a diagram showing the reduced thermal stress on an inclined tip portion versus the distance from a finger lead. / Symbol Description

第11頁 : ~~ " 4 0 b ^ μ ^ 五、發明說明（9) 10引線框架 12IC晶粒 1 4散熱片 1 6外框架 18黏著層 20、54指狀引線 22、52指狀引線之尖端部分2 4晶粒支持板 2 6晶粒板 2 8 、5 6 IC晶粒之頂部表面 30、50 IC封裝 32孔 34高傳導性金屬導線 36塑膠模製化合物 38連接墊 40、60楔形鍵結 42連接導線 44導線接合球 46階梯狀表面 本發明係揭露一種引線框架，其配置有指狀引線，且 該指狀引線之尖端部分係傾斜或是有坡度，以達到改進導 線連接一 IC晶粒。於一指狀引線上之傾斜尖端部分所形成 的楔形鍵結，與形成於一指狀引線之階梯狀尖端部分之楔 形鍵結相比，已有效地改進了對熱應力的承受度。此指狀 引線之傾斜尖端部分可藉由形成該引線框架之最後一個步 驟’係為衝壓方法，而達成上述目的，在該指狀引線尖端 部分之傾斜頂部表面與其水平面間所形成之夾角一般係小 於° ’且最好約在5。到3〇。之間，更理想的是在5。到 2 〇 °之間。 曰 當一高電子傳導性金屬導線於一導線連接過程在一 IC 晶粒與—傾斜尖端部分之間作連接，當於1 50 °C與-65 t之 ，循環測試時產生於此連接線，亦即一金導線與傾斜 尖·端4分間之熱應力若與形成於一指狀引線之階梯狀尖端Page 11: ~~ " 4 0 b ^ μ ^ V. Description of the invention (9) 10 lead frame 12 IC die 1 4 heat sink 1 6 outer frame 18 adhesive layer 20, 54 finger lead 22, 52 finger lead Tip part 2 4 die support board 2 6 die board 2 8, 5 6 Top surface of IC die 30, 50 IC package 32 hole 34 high conductive metal wire 36 plastic molding compound 38 connection pad 40, 60 wedge The present invention discloses a lead frame, which is provided with a finger lead, and the tip portion of the finger lead is inclined or sloped, so as to improve the wire connection of an IC. Grain. The wedge bond formed on the inclined tip portion of a finger lead has effectively improved the tolerance to thermal stress compared with the wedge bond formed on the stepped tip portion of a finger lead. The slanted tip portion of the finger lead can be achieved by the last step of forming the lead frame, which is a stamping method. The angle formed between the slanted top surface of the finger lead tip portion and its horizontal plane is generally Less than ° 'and preferably around 5. To 30. Between, more ideally at 5. To 20 °. That is to say, when a high electron conductive metal wire is connected between an IC die and an inclined tip during a wire connection process, it is generated from this connection wire when it is tested at a temperature of 1 50 ° C and -65 t. In other words, if the thermal stress between a gold wire and the inclined tip and the end is equal to the stepped tip formed on a finger lead

第12頁 __4Q84S9___^ 五、發明說明（ίο) 部分之導線連接相比，係下降至少2 〇 % ^較理想的是達到 熱應力減少50% ’因此所形成之1C封裝能夠通過一熱循環 測試。 本發明更揭露一種1C晶片之封裝，其中，一 1C晶片係 連接於一配置有傾斜尖端表面之指狀引線的引線框架其指 狀引線上。此指狀引線之傾斜尖端部分在該處形成一較大 -之鍵結’並在一熱循環測試中造成較高的熱應力阻抗。在 該指狀引線尖端部分之傾斜頂部表面與其水平面間所形成 之夾角係小於3 0 6 ’且最好約在5。到2 〇。之間’而此引 線框架則可由一銅或銅合金所製成的薄金屬片形成。該引A 線框架一般係於一微影製程之後之一化學性蝕刻製程行 鞋’以定義該引線框架之圖形。此IC封裝更包括高電子傳 導性金屬導線，如金導線以在指狀引線之每一傾斜尖端部 分與一 IC晶粒上所相對應的連接墊之間提供電子連接。 現在，參考第2圖，其中，係顯示本發明之1C封裝50 之放大、部分截面圖；此指狀引線54之尖端部分52係與一 傾斜之頂部表面56 —同提供，其與該指狀引線54之水平表 面形成一夾角Θ。金導線3 4係連接該1C晶粒12之頂部表面 28上之連接墊38與該尖端部分52之傾斜頂部表面56以形成 一改良的楔形鍵結6 0。在此可注意到形成於該傾斜頂部表q 面56之楔形鍵結6〇係較一般形成於一階梯狀之尖端部分 (如第1C圖所示）的楔形鍵結要厚。此較厚之樓形鍵結更 給予一較高之鍵結量與一較高之連接之熱衝擊阻抗。當楔 形鍵結6 0係於一標準熱循環測試中做測試，亦即，一Page 12 __4Q84S9 ___ ^ V. Compared with the wire connection in the description of the invention (ίο), the reduction is at least 20% ^ It is ideal to reduce the thermal stress by 50% 'so the 1C package formed can pass a thermal cycle test . The present invention further discloses a 1C chip package, in which a 1C chip is connected to a finger lead of a lead frame configured with a finger lead having an inclined tip surface. The slanted tip portion of the finger lead forms a larger -bond 'there and causes a higher thermal stress resistance in a thermal cycle test. The angle formed between the inclined top surface of the tip portion of the finger lead and its horizontal plane is less than 3 0 6 'and preferably about 5. To 2 0. Between 'and the lead frame can be formed of a thin metal sheet made of copper or copper alloy. The lead frame is generally a chemical etching process shoe 'after a lithography process to define the pattern of the lead frame. This IC package further includes a highly electronically conductive metal wire, such as a gold wire, to provide an electrical connection between each slanted tip portion of the finger lead and a corresponding pad on an IC die. Now, referring to FIG. 2, which shows an enlarged, partial cross-sectional view of the 1C package 50 of the present invention; the tip portion 52 of the finger lead 54 is provided with an inclined top surface 56, which is the same as the finger shape. The horizontal surface of the lead 54 forms an included angle Θ. The gold wire 34 connects the connecting pad 38 on the top surface 28 of the 1C die 12 with the inclined top surface 56 of the tip portion 52 to form a modified wedge bond 60. It can be noted here that the wedge bond 60 formed on the inclined top surface 56 is thicker than the wedge bond generally formed on a stepped tip portion (as shown in FIG. 1C). This thicker building bond gives a higher bond amount and a higher thermal shock resistance of the connection. When the wedge bond 60 is tested in a standard thermal cycle test, that is, a

第13頁 _____^08459___ 五、發明說明（11) JEDEC熱循環測試，其溫度在150 °c與-65 〇C之間，則於該 楔形鍵結60中所產生之熱應力係降低了至少20%。Page 13 _____ ^ 08459___ V. Description of the invention (11) The JEDEC thermal cycle test, whose temperature is between 150 ° c and -65 ° C, then the thermal stress generated in the wedge bond 60 is reduced by at least 20%.

於樣品所獲得的測試資料結合本發明之新的連接技術 以及在標準控制樣品中所獲得的測試資料（在指狀引線上 具有階梯狀的尖端部分）如第3圊所示；熱應力對於指狀 引線之尖端部分的位置在2種傾斜角度下，以及具有階梯 狀之頂部表面的標準控制樣品之比較圖形如第3圖所示； 曲線72指出在一階梯狀之尖端部分（θ=〇。）上所形成 的楔形鍵結之所獲得之熱應力，如第1C圖所示。在一引線 框架之傾斜尖端部分其傾斜角度約為丨〇。所獲得的資料如 曲線74所示’而在一引線框架之傾斜尖端部分其傾斜角度 約為20°所獲得的資料則如曲線76所示。其本身形成於一 傾斜尖端部分之楔形鍵結所產生的熱應力由曲線72，74， 76可看出顯著的下降’例如，在距離一指狀引線之尖端〇. 0 0 4对處’形成於引線框架之傾斜尖端部分其傾斜角度約 為20之楔形鍵結所產生的熱應力約下降95%。 〇 本發明之新方法以及藉由此有益之方法所形成的1(：封 裝係由上述之說明及其第2與第3圖之圖示所證明；在此應 該注意本發明之方法係繪製於一引線框架中之指狀引線的 形成，但此種方法亦可同樣地使用於其他不利用指狀引線 之鍵結，且可得到相同理想的結果。 〜雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可作更動與潤飾，因此本發明之保護範圍The test data obtained from the sample combined with the new connection technology of the present invention and the test data obtained from the standard control sample (with a stepped tip portion on the finger lead) are shown in Figure 3; thermal stress for the finger The position of the tip portion of the lead wire at two tilt angles, and the comparison pattern of a standard control sample with a stepped top surface is shown in Fig. 3; the curve 72 indicates a stepped tip portion (θ = 0. The thermal stress obtained by the wedge bond formed on) is shown in Figure 1C. The angle of inclination of the inclined tip portion of a lead frame is about 0 °. The obtained data is shown in a curve 74 'and the obtained data is shown in a curve 76 in the inclined tip portion of a lead frame whose inclination angle is about 20 °. The thermal stress generated by the wedge-shaped bond itself formed at an inclined tip portion can be seen by the curves 72, 74, 76 to show a significant drop 'for example, at the distance from the tip of a finger lead 0.04 to 4'. The thermal stress generated by a wedge-shaped bond having an inclined angle of about 20 at the inclined tip portion of the lead frame is reduced by about 95%. 〇 The new method of the present invention and the 1 (:) package formed by this beneficial method are demonstrated by the above description and the diagrams of Figures 2 and 3; it should be noted here that the method of the present invention is drawn on The formation of finger leads in a lead frame, but this method can also be used in the same way for other bonding without using finger leads, and the same ideal results can be obtained. Although the present invention has been disclosed in a preferred embodiment As above, however, it is not intended to limit the present invention. Any person skilled in the art can make changes and decorations without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention

五、發明說明（12) 當視後附之申請專利範圍所界定者為準。V. Description of the invention (12) It shall be subject to the definition in the appended patent application scope.

1IIIIIII 第15頁1IIIIIII Page 15

Claims (1)

六、申請專利範圍 1. 一種用於改良導線連接之指狀引蜂’其具有傾斜尖 端部分，且配置於一引線框架上，包括： 一外框架，具有複數指狀弓1線’且自此係呈發射狀； 以及 複數指狀引線，且該每一指狀引線具有一基底部分， 係與該外框架整合，以及一尖端部分，係向内延伸至該外 -框架之中心，該尖端部分並具有一頂部表面， 其與該指狀引線之水平面所形成之爽角係小於3 0 ° 。 2. 如申請專利範圍第1項所述之用於改良導線連接之 指狀引線，其中，該尖端部分具有一頂部表面且其與該指¢) 狀引線之水平面所形成之夾角約在5 °到3 0 °之間° 3. 如申請專利範圍第1項所述之用於改良導線連接之 指狀引線，其中，該尖端部分具有一頂部表面且其與該指 狀引線之水平面所形成之夾角最好約在5。到30 °之間。 4·如申請專利範圍第1項所述之用於改良導線連接之 指狀引線’其中’於該尖端部分之頂部表面係於一衝壓程 序中所形成。 5. 如申請專利範圍第1項所述之用於改良導線連接之 指狀引線’其中’該指狀引線之該傾斜尖端部分係於一導 線連接過程中連接於一金導線。 （^ 6. 如申請專利範圍第1項所述之用於改良導線連接之 指狀引線’其中’該指狀引線之該傾斜尖端部分係在1 5〇 C與-6 5 °C之間做熱循環測試時，降低了形成於一連接金 導線與該傾斜尖端部分之介面間之熱應力至少2 〇 %。6. Scope of Patent Application 1. A finger-like bee for improving wire connection 'has an inclined tip portion and is arranged on a lead frame, including: an outer frame having a plurality of finger bows 1 wire' and since then And a plurality of finger leads, each of which has a base portion, is integrated with the outer frame, and a tip portion extends inward to the center of the outer-frame, the tip portion And it has a top surface, and the angle formed by the horizontal plane of the finger lead is less than 30 °. 2. The finger lead for improved wire connection as described in item 1 of the scope of patent application, wherein the tip portion has a top surface and the angle formed by the finger surface with the horizontal plane of the finger ¢) is about 5 ° Between 3 ° and 30 ° 3. The finger lead for improving wire connection as described in item 1 of the patent application scope, wherein the tip portion has a top surface and is formed with a horizontal plane of the finger lead The included angle is preferably about 5. To 30 °. 4. The finger-shaped lead wire 'wherein' on the top portion of the tip portion is formed in a stamping process as described in the first claim of the patent application. 5. The finger lead for improving wire connection as described in item 1 of the scope of the patent application, wherein the inclined tip portion of the finger lead is connected to a gold wire during a wire connection process. (^ 6. As described in item 1 of the scope of the patent application, the finger lead for improving the wire connection 'wherein' the inclined tip portion of the finger lead is made between 150 ° C and -65 ° C During the thermal cycle test, the thermal stress formed between an interface connecting a gold wire and the inclined tip portion was reduced by at least 20%. 第16頁 六、申請專利範圍 7.如申請專利範圍第1項所述之用於改良/導線連接之 指狀引線’其中，該指狀引線之該傾斜尖端部分係在丨5 〇 與-65 °C之間做熱循環測試時，降低了形成於一連接金 導線與該傾斜尖端部分之介面間之熱應力至少50%。 8 ·如申請專利範圍第1項所述之用於改良導線連接之 才曰狀引線，其中’該引線框架係由銅，或鋼合金，或是鐵 -鎳合金所形成。 9. 一種連接於一引線框架之積體電路（jc)晶片之封 裝，包括： 一引線框架，具有複數由該框架發射之指狀引 線’且該每一指狀引線具有一傾斜尖端部分，其與該指狀 引線之水平面所形成之夾角係小於30。； 曰 一 1C晶片’於一頂部表面具有複數連接墊；Page 16 6. Scope of patent application 7. The finger lead for improvement / wire connection as described in item 1 of the scope of patent application, wherein the inclined tip portion of the finger lead is between 5 ° and -65. When the thermal cycle test is performed between ° C, the thermal stress formed between a connection gold wire and the interface of the inclined tip portion is reduced by at least 50%. 8. The lead wire for improving lead connection as described in item 1 of the scope of patent application, wherein the lead frame is formed of copper, a steel alloy, or an iron-nickel alloy. 9. A package of an integrated circuit (jc) chip connected to a lead frame, comprising: a lead frame having a plurality of finger leads' emitted from the frame; and each finger lead having an inclined tip portion, The angle formed with the horizontal plane of the finger leads is less than 30. A 1C chip 'has a plurality of connection pads on a top surface; _40R45Q 六、申請專利範圍 線之水平面間所形成的夾角係夠大足以在一高傳導性之導 線連接於該傾斜尖端部分而形成一介面時，在1 75 °c與5 °C之間做熱循環之測試，於該介面間所產生的熱應力若與 一非傾斜尖端部分之資料相比，至少可減少2〇%。 ’、 1 2.如申請專利範圍第9項所述之連接於一引線樞架之 積體電路晶片之封裝，其中，該指狀引線係由蝕刻製^或 衝擊過程中形成，且該傾斜尖端部分係由一衝擊過程而 成。 ’_40R45Q VI. The angle formed between the horizontal planes of the patent-applied lines is large enough to connect a highly conductive wire to the inclined tip to form an interface, and heat between 1 75 ° C and 5 ° C. Cyclic testing, if the thermal stress generated between the interface and the data of a non-inclined tip part, can be reduced by at least 20%. ', 1 2. The package of an integrated circuit chip connected to a leadframe as described in item 9 of the scope of the patent application, wherein the finger leads are formed by etching or impact, and the inclined tip Part of it is made by an impact process. ’ 13 ·如申請專利範圍第9項所述之連接於一引線框架之 積體電路晶片之封裝，其中，該引線框架係於蝕刻製程中 由銅’或銅合金’或是鐵-鎳合金所形成。 14. 如申請專利範圍第9項所述之連接於一引線框架之 積體電f晶片之封裝，其中，在每一該傾斜尖端部分與一 在該1C晶片上相對應之連接墊間提供電性連 導線係為金導線。/ ^ ^ Γ3 15. 種在一引線框架與一 I c晶粒間提供電子式連接 的方法’包括下列步驟： 供IC晶粒，日 ^ .. 且於其頂部具有複數連接墊； 挺供一引線框架，Α且古13. The package of an integrated circuit chip connected to a lead frame as described in item 9 of the scope of the patent application, wherein the lead frame is formed of copper 'or copper alloy' or iron-nickel alloy in the etching process . 14. The package of a chip integrated f chip connected to a lead frame as described in item 9 of the scope of patent application, wherein electricity is provided between each of the inclined tip portions and a corresponding pad on the 1C chip The sex wire is a gold wire. / ^ ^ 3 15. A method for providing an electronic connection between a lead frame and an I c die 'includes the following steps: for IC die, ^ .. and has a plurality of connection pads on top of it; Lead frame, Α and ancient 線呈發射狀，而每一引繞複數指狀引線且由該指狀引 部分，且與-指肤j線頂部表面具有一坡度狀之尖端 線之水平面間之夾角係小於3 0。；以 及 在該引線框架^ 粒之連接塾’與連=傳導性的第—末端至該1C晶 乐一末端至一對應之具有坡度的尖端 --4 fi/:? — . f I________________ 六、申請專利範圍 部分。 16·如申請專利範圍第15項所述之在一引線框架與_ 1C晶粒間提供電子式連接的方法，其中，該具有坡度之尖 端部分有一頂部表面，且與該指狀引線之水平面間之爽角 約在5 °到20 °之間。 1 7·如申請專利範圍第丨5項所述之在一引線框架與〜 IC晶粒間提供電子式連接的方法，其中，形成於該高傳導 性之導線的第二末端與該指狀引線之具坡度之尖端部分間 的鍵結具有之熱應力係在15〇 v與—65 t之間做熱循環< ^ 導測試時’若與一在非傾斜尖端部分傳導所獲得的熱應力 相比’至少可減少20% ^ 18. 如申請專利範圍第15項所述之在一引線框架與〜 I c晶粒間提供電子式連接的方法，更包括封裝該丨c晶板、 該引/線框架、以及該高傳導性導線於一塑膠模製化合 的步驟。 ^ 19. 如申請專利範圍第15項所述之在一引線框架與〜 1C晶粒間提供電子式連接的方法，更包括利用一化學蝕 製程或機械衝壓程序而於該引線框架形成複數指狀引線二 步驟。 呵 2〇♦如申請專利範圍第15項所述之在一引線框架與一 1C晶粒間提供電子式連接的方法，更包括利用一衝壓 以在該複數指狀引線形成具坡度之尖端部分的步驟。The line is radiating, and each lead is wound around a plurality of finger leads and is led by the finger, and the angle with the horizontal plane of the top surface of the -finger j line is a slope of less than 30. ; And at the connection of the lead frame ^ particles, and the connection = conductive end-to the end of the 1C crystal music to a corresponding tip with a gradient-4 fi / :? —. F I________________ VI. Application Patent scope part. 16. The method for providing an electronic connection between a lead frame and a _1C die as described in item 15 of the scope of the patent application, wherein the tip portion having the slope has a top surface and is in contact with the horizontal plane of the finger lead The cool angle is between 5 ° and 20 °. 17 · The method for providing an electronic connection between a lead frame and an IC die as described in item 5 of the patent application scope, wherein the second end of the highly conductive wire and the finger lead are formed The thermal stress of the bond between the sloping tip portion is between 150V and -65 t for thermal cycling < ^ In the conductance test 'if it is related to a thermal stress obtained by conduction at the non-sloping tip portion It can be reduced by at least 20% compared to '18. The method for providing an electronic connection between a lead frame and ~ IC chip as described in item 15 of the scope of patent application, further includes packaging the chip board, the chip / The step of combining the wire frame and the highly conductive wire in a plastic mold. ^ 19. The method for providing an electronic connection between a lead frame and ~ 1C die as described in item 15 of the scope of the patent application, further comprising forming a plurality of fingers on the lead frame using a chemical etching process or a mechanical stamping process. Lead two steps. Oh 2 ♦ The method for providing an electronic connection between a lead frame and a 1C die as described in item 15 of the scope of patent application, further comprising using a punch to form a sloped tip portion on the plurality of finger leads. step.
TW088107462A 1999-05-07 1999-05-07 Lead finger used in improving the wiring line connection TW408459B (en)

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