JPH08250628A - Semiconductor integrated circuit device and its manufacture - Google Patents

Abstract

PURPOSE: To provide a semiconductor integrated circuit device of low cost which has excellent heat dissipation characteristics, and the manufacturing technique of a semiconductor integrated circuit device which can be simply manufactured at a low cost and has excellent heat dissipation characteristics. CONSTITUTION: This manufacturing method consists of the following; a process wherein ball-shaped bumps 4 composed of metal material are formed on pads 3 for heat dissipation of an IC chip 1 in which a semiconductor integrated circuit is formed, by using a ball bonding method, and a process wherein a plurality of ball-shaped bumps 4 composed of metal material are stacked and formed on the bumps 4 by using the ball bonding method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device and a manufacturing method thereof, and more particularly to a technique effectively applied to a manufacturing technique of a semiconductor integrated circuit device which is a high heat generating device having excellent heat dissipation characteristics.

[0002]

2. Description of the Related Art In recent years, semiconductor integrated circuit devices have been highly integrated, finely processed, and have high power, and elements included therein have high heat generation.

As a countermeasure, it is conceivable to radiate heat from the semiconductor integrated circuit device using a fin or a fan, and to cool the package by adopting a water cooling type when the temperature becomes higher.

When designing a package in a semiconductor integrated circuit device including a high heat-generating element, the heat generation of the semiconductor element is released to the package through the semiconductor substrate by adopting a mounting method which adopts ordinary die bonding. It is conceivable to use a fin to radiate heat from the package.

Further, by adopting a mounting method adopting a flip chip method, it is considered that a dummy bump for heat dissipation is previously arranged inside the chip and heat is released to the package through the dummy bump.

As a document describing a semiconductor integrated circuit device having a fin, there is one described in, for example, JP-A-60-202955.

[0007]

However, in the method of cooling the semiconductor integrated circuit device including the above-mentioned high heat generating element, the selling price rises by about 10% due to the expensive members such as fins. The present inventor has found that the problem that the mounting area becomes large together with this occurs.

An object of the present invention is to provide an inexpensive semiconductor integrated circuit device having excellent heat dissipation characteristics.

Another object of the present invention is to provide a manufacturing technique of a semiconductor integrated circuit device having excellent heat dissipation characteristics which can be manufactured easily and inexpensively.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0011]

The typical ones of the inventions disclosed in the present application will be outlined below.

(1) In the semiconductor integrated circuit device of the present invention, ball-shaped bumps made of a metal material are provided on the heat radiation pads of the IC chip on which the semiconductor integrated circuit is formed.

(2) In the method of manufacturing a semiconductor integrated circuit device according to the present invention, ball-shaped bumps made of a metal material are formed on the heat dissipation pads of the IC chip on which the semiconductor integrated circuit is formed by a ball bonding method. The method includes a step and a step of stacking and forming a plurality of ball-shaped bumps made of a metal material on the bumps by a ball bonding method.

[0014]

[Action]

(1) According to the semiconductor integrated circuit device of the present invention described above,
Since the ball-shaped bump made of a metal material is provided on the heat dissipation pad of the IC chip,
Since the heat generated from the semiconductor element provided in the IC chip can be radiated to the outside through the bump,
The heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, according to the above-described semiconductor integrated circuit device of the present invention, since the ball-shaped bumps made of a metal material on the heat radiation pads of the IC chip can be used as the heat radiation bumps, the IC chip can be formed. Since the heat generated from the provided semiconductor element can be radiated to the outside through the bumps, it is not necessary to use a member such as a fin which is expensive and has a large mounting area. Therefore, a semiconductor having a small mounting area For example, the selling price of the integrated circuit device can be reduced by about 10% as compared with the conventional one.

(2) According to the method for manufacturing a semiconductor integrated circuit device of the present invention described above, a ball-shaped metal material is formed on the heat dissipation pad of the IC chip on which the semiconductor integrated circuit is formed by the ball bonding method. Since it has a step of forming bumps and a step of stacking and forming a plurality of ball-shaped bumps made of a metal material on the bumps by a ball bonding method, the ball bonding method requires a simple manufacturing process. It is possible to form a multi-stage heat dissipation bump having a heat dissipation characteristic according to the above.

Therefore, the heat generated from the semiconductor element provided on the IC chip can be radiated to the outside through the bumps, so that the heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, since the heat generated from the semiconductor element provided in the IC chip can be radiated to the outside through the bump, it is not necessary to use an expensive member such as a fin which increases the mounting area. A semiconductor integrated circuit device having a small mounting area can be manufactured at low cost because the selling price can be reduced by, for example, about 10% as compared with the conventional semiconductor device and a simple manufacturing technique is used.

[0019]

Embodiments of the present invention will now be described in detail with reference to the drawings. In all the drawings for explaining the embodiments, those having the same function are designated by the same reference numerals, and a duplicate description will be omitted.

(Embodiment 1) FIGS. 1 to 6 are views showing a manufacturing process of a semiconductor integrated circuit device according to an embodiment of the present invention. FIGS. 1 and 4 are plan views, FIG. 2 and FIG. 5 and 6 are sectional views. A semiconductor integrated circuit device of the present invention and a specific manufacturing method thereof will be described with reference to FIG.

First, as shown in FIG. 1, an IC chip 1 in which a semiconductor integrated circuit (hereinafter, abbreviated as IC if necessary) is formed is prepared.

To manufacture the IC chip 1, for example, Ga
For example, in a semiconductor substrate having a compound semiconductor such as As, M
OSFET (Metal Oxide Semiconductor Field Effect)
After forming multiple semiconductor devices such as (Transistor),
The electrode pad 2 and the heat dissipation pad 3 are formed on the insulating film formed on the semiconductor substrate by using a conductive film whose uppermost layer film is a gold (Au) thin film.

Next, a probe inspection is performed on each IC on the semiconductor substrate in a wafer state, and a good IC and a defective I
Identify C and. Next, a dicing operation is performed to divide the wafer-state ICs into individual IC chips 1, and the defective IC chips identified by the probe inspection process are removed, so that only the good IC chips 1 are described below. Move to.

Next, as shown in FIG. 2, a ball made of gold (Au) is bonded to the heat dissipation pad electrode 3 of the IC chip 1 by a ball bonding method to form a bump 4.

Specifically, as shown in FIGS. 7 to 9,
Bonding wire 1 made of gold (Au) as a main material and passed through the axis of the capillary 9 of the wire bonding apparatus
The ball 11 made of gold (Au) as the main material and formed at the tip of 0 is used as the heat dissipation pad 3 by using the capillary 9.
Are bonded using heat and ultrasonic waves (FIGS. 7 and 8).
Next, by using the tip of the capillary 9 to cut the bonding wire 9 at the neck portion of the ball 11, the bump 4 made of the ball 11 is formed on the heat dissipation pad 3 (FIG. 9). At this time, an anchor portion 4a having a sharp tip is formed on the upper end portion of the bump 4. Reference numeral 12 is a torch for forming the ball 11.

Next, the bumps 4 are formed on each of the heat dissipation pads 3 by repeating the above-described method for forming the bumps 4.

Subsequently, the bumps 4 are bonded onto the respective bumps 4 by repeating the method of forming the bumps 4. At this time, since the bumps 4 are formed of the balls 11 whose main material is gold (Au) having excellent spreadability, the anchor portions 4a formed on the bumps 4 on the lower stage are lower than those on the bumps 4 on the upper stage. As it cuts into the part, the lower bump 4
It is possible to reliably bond the upper bump 4 to the upper bump 4 by a pressure bonding operation.

Since the bumps 4 are formed by the balls 11 whose main material is gold (Au),
Excellent corrosion resistance. Gold (Au) has excellent properties as a material for the uppermost layer film of the bumps 4 and the heat dissipation pad 3 to which the bumps 4 are bonded due to its excellent spreadability, corrosion resistance, and thermal conductivity. is there.

Subsequently, by repeating the method of forming the bumps 4, as shown in FIG. 3, the bumps 4 are stacked on each bump 4 in multiple stages.

Although the semiconductor integrated circuit device of the first embodiment shown in FIG. 3 has bumps 4 in five steps, for example, two steps and three bumps are used.
It is possible to adopt a mode in which a plurality of bumps 4 having a plurality of stages, such as four stages, four stages, or six stages or more, are superposed.

As the bonding wire 10 described above, in addition to the bonding wire containing gold (Au) as a main material, a malleable metal such as aluminum (Al), copper (Cu) or lead (Pb) is mainly used. A bonding wire as a material can be used.

As the ball bonding method, a ball bonding method using heating, ultrasonic waves or heating energy in combination with ultrasonic waves can be used.
That is, as the ball bonding method, a thermocompression bonding wire bonding apparatus that uses pressure and heat, an ultrasonic wire bonding apparatus that applies pressure and ultrasonic energy, or a method that uses pressure, heat and ultrasonic vibrations is used. Various modes such as an ultrasonic combined thermocompression bonding device can be used.

Next, the printed wiring board 5 as shown in FIG. 4 is prepared, and the IC chip 1 is bonded to the chip mounting portion 5a of the printed wiring board 5 with the adhesive 6 as shown in FIG. The printed wiring board 5 has a groove-shaped chip mounting portion 5a and wiring 5b formed on the surface of a substrate made of, for example, glass fiber, ceramics, or the like. Wiring 5b
Is a thin film made of gold (Au) plated on the surface of a thick film such as tungsten (W) printed by a screen printing method.

Next, the electrode pad 2 formed on the outer peripheral portion of the IC chip 1 and the wiring 5b on the printed wiring board 5 are made of, for example, gold (A) by a wire bonding method.
u) or a bonding wire 7 made of a metal such as aluminum (Al).

Next, as shown in FIG. 6, a sealing resin 8 such as an epoxy resin is used so as to cover a part of the bump 4, the main body of the IC chip 1 and the bonding wire 7. At this time, the height of the stacked bumps 4 is twice or more than the height of the bumps 4 in the region covered with the sealing resin 8, so that the heat dissipation by the bumps 4 is excellent. It can be something.

The semiconductor integrated circuit device according to the first embodiment is an IC
The chip 1 is directly adhered to the printed wiring board 5 and resin-encapsulated with the encapsulating resin 8. However, as another aspect, the IC chip 1 is mounted on various IC packages such as QFP (Quad Flat Package). It can be mounted by die bonding.

According to the semiconductor integrated circuit device of the first embodiment described above, since the bumps 4 in multiple stages are provided on the heat dissipation pad 3 of the IC chip 1, the semiconductor chip inside the IC chip 1 is generated. The generated heat can be radiated through the bumps 4.

According to the semiconductor integrated circuit device of the first embodiment described above, the ball-shaped bump 4 made of a metal material is provided on the heat dissipation pad 3 of the IC chip 1. Since the heat generated from the semiconductor element provided in the IC chip 1 can be radiated to the outside through the bump 4, the heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, since the ball-shaped bumps 4 made of a metal material on the heat dissipation pad 3 of the IC chip 1 can be used as the heat dissipation bumps 4, the semiconductor chips provided on the IC chip 4 are generated. Since it is possible to radiate the generated heat to the outside through the bumps, it is not necessary to use expensive members such as fins that increase the mounting area. For example, the selling price can be reduced by about 10%.

According to the method for manufacturing the semiconductor integrated circuit device of the first embodiment described above, a ball-shaped metal material is formed on the heat dissipation pad 3 of the IC chip 1 on which the semiconductor integrated circuit is formed by the ball bonding method. And the step of forming a plurality of ball-shaped bumps 4 made of a metal material on the bumps 4 by a ball bonding method. Through the manufacturing process, it is possible to form the multi-stage heat dissipation bumps 4 having heat dissipation characteristics as required.

Therefore, the heat generated from the semiconductor element provided in the IC chip 1 can be radiated to the outside through the bump 4, so that the heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, since the heat generated from the semiconductor element provided in the IC chip 1 can be radiated to the outside through the bumps 4, it is not necessary to use a member such as a fin which is expensive and has a large mounting area. Therefore, the semiconductor integrated circuit device having a small mounting area can be manufactured at a low cost because the selling price can be reduced by, for example, about 10% as compared with the conventional semiconductor device and a simple manufacturing technique is used.

(Embodiment 2) FIG. 10 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

In FIG. 10, reference numeral 13 denotes a thin metal plate, which is made of, for example, copper which is excellent in heat dissipation as a main material, and a thin film of corrosion resistant gold (Au) is formed on the surface thereof. It is possible to apply a metal film such as an open metal plate.

In the semiconductor integrated circuit device of the first embodiment described above, the bumps 4 in five steps are provided on the heat radiation pad 3, but in the second embodiment, the bumps 4 are formed on the heat radiation pad 3. 2 bumps 4 are formed on the
After adhering the metal plate 13 on the above, the two-step bumps 4 are formed on the metal plate 13, the metal plate 13 is formed again on the bumps 4, and then the two-step bumps 4 are formed again. Is what you are doing.

Although the semiconductor integrated circuit device of the second embodiment shown in FIG. 10 has bumps 4 in two stages, for example, three stages, 4
It is possible to adopt a mode in which a plurality of bumps 4 in multiple stages are overlapped with each other according to the need for a stage or the like.

Since the other constituent elements of the semiconductor integrated circuit device of the second embodiment are the same as those of the semiconductor integrated circuit device of the first embodiment described above, description thereof will be omitted.

In the semiconductor integrated circuit device of the second embodiment, since the metal plate 13 is formed between the multi-stage bumps 4, the multi-stage bumps 4 can be easily aligned and stacked. Since the bumps 4 in multiple stages can be stacked to enhance the heat dissipation and the heat dissipation of the metal plate 13 can be utilized, the heat dissipation can be excellent.

(Third Embodiment) FIG. 11 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

In FIG. 11, reference numeral 14 denotes a pin made of metal, for example, PGA (Pin Grid A).
A pin made of metal such as 42 alloy used in the rray package can be applied.

In the above-described semiconductor integrated circuit device of the first embodiment, the bumps 4 in five steps are provided on the heat dissipation pad 3, but in the third embodiment, the heat dissipation pad 3 is disposed on the heat dissipation pad 3. 2 bumps 4 are formed on the
The pin 14 is connected to the upper part.

The semiconductor integrated circuit device according to the third embodiment shown in FIG. 11 has the bumps 4 in two stages.
It is possible to adopt a mode in which a plurality of bumps 4 in multiple stages are overlapped with each other according to the need for a stage or the like. Also, the thickness of the pin 14,
The length and the shape can be changed into various forms on the condition of heat dissipation and mechanical strength.

Since the other constituent elements of the semiconductor integrated circuit device of the third embodiment are the same as those of the semiconductor integrated circuit device of the first embodiment described above, description thereof will be omitted.

The semiconductor integrated circuit device of the third embodiment is an IC
By providing the bumps 4 and the pins 14 on the bumps 4 on the heat dissipation bumps 3 in the chip 1,
The heat generated from the semiconductor element inside the chip 1 can be radiated through the bumps 4 and the pins 14.

(Embodiment 4) FIG. 12 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

The semiconductor integrated circuit device of the fourth embodiment is such that the bumps 4 similar to those of the above-described first embodiment are formed as the heat dissipation bumps 4 on the back surface of the IC chip 1 for flip-chip mounting. is there.

In FIG. 12, 15 is a wiring board,
Reference numeral 15a indicates wiring inside the wiring board 15, reference numeral 15b indicates wiring on the surface of the wiring board 15, and reference numeral 16 indicates electrode bumps in the flip-lip IC chip 1.

Since the other constituent elements of the semiconductor integrated circuit device of the fourth embodiment are the same as those of the semiconductor integrated circuit device of the first embodiment described above, description thereof will be omitted.

The heat dissipation bumps 4 of the fourth embodiment are the same as the bumps 4 of the semiconductor integrated circuit device of the first embodiment described above, but the second embodiment or the third embodiment described above is used.
The bumps 4 and the like in the semiconductor integrated circuit device can be applied.

(Embodiment 5) FIG. 13 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

In the semiconductor integrated circuit device of the fifth embodiment, similarly to the semiconductor integrated circuit device of the second embodiment described above, two bumps 4 are formed on the heat dissipation pad 3 and the bumps 4 are formed.
The fin 17 is adhered to the top of the.

Although the semiconductor integrated circuit device of the fifth embodiment shown in FIG. 13 has bumps 4 in two stages, for example, three stages and four bumps are used.
It is possible to adopt a mode in which a plurality of bumps 4 in multiple stages are overlapped with each other according to the need for a stage or the like.

Since the other constituent elements of the semiconductor integrated circuit device of the fifth embodiment are the same as those of the semiconductor integrated circuit device of the first embodiment described above, the description thereof will be omitted.

In the semiconductor integrated circuit device of the fifth embodiment, the fins 17 are formed on the multi-stage bumps 4, so that the multi-stage bumps 4 can be stacked in order to enhance heat dissipation. Since the heat dissipation of the fins 17 can be utilized, the heat dissipation can be excellent.

Further, since the semiconductor integrated circuit device of the fifth embodiment has the fins 17 formed on the multi-stage bumps 4, it is possible to stack the multi-stage bumps 4 in order to enhance the heat dissipation. Therefore, even if the fin 17 which is small in size and inexpensive is used, the heat dissipation can be excellent. As a result, an inexpensive semiconductor integrated circuit device with a small mounting area can be obtained.

Needless to say, the present invention is not limited to the first to fifth embodiments, and various modifications can be made without departing from the spirit of the invention. For example, as shown in FIG. 14, I having a bump 4 for heat dissipation on a wiring board 18
The present invention can be applied to an inexpensive semiconductor integrated circuit device which has a small mounting area such as a mode in which the C chip 1 is arranged and has excellent heat dissipation and a manufacturing technique thereof.

[0067]

The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.

(1) According to the semiconductor integrated circuit device of the present invention, since the ball-shaped bump made of a metal material is provided on the heat dissipation pad of the IC chip, the bump is provided on the IC chip. Since the heat generated from the existing semiconductor element can be radiated to the outside through the bump, the heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, according to the above-described semiconductor integrated circuit device of the present invention, since the ball-shaped bump made of a metal material on the heat radiation pad of the IC chip can be used as the heat radiation bump, the IC chip is mounted on the IC chip. Since the heat generated from the provided semiconductor element can be radiated to the outside through the bumps, it is not necessary to use a member such as a fin which is expensive and has a large mounting area. Therefore, a semiconductor having a small mounting area For example, the selling price of the integrated circuit device can be reduced by about 10% as compared with the conventional one.

(2) According to the semiconductor integrated circuit device of the present invention, since the metal plate is formed between the multi-stage bumps, the multi-stage bumps can be easily aligned and stacked. Since multiple bumps can be stacked to enhance the heat dissipation and the heat dissipation of the metal plate can be utilized, the heat dissipation can be excellent.

(3) According to the method for manufacturing a semiconductor integrated circuit device of the present invention, ball-shaped bumps made of a metal material are formed on the heat radiation pads of the IC chip on which the semiconductor integrated circuit is formed by the ball bonding method. Forming process,
And a step of stacking a plurality of ball-shaped bumps made of a metal material on the bumps by a ball bonding method so that the ball bonding method has a heat dissipation characteristic as required by a simple manufacturing process. It is possible to form a multi-step heat dissipation bump.

Therefore, the heat generated from the semiconductor element provided in the IC chip can be radiated to the outside through the bump, and the heat dissipation of the semiconductor integrated circuit device can be made excellent.

Further, since the heat generated from the semiconductor element provided on the IC chip can be radiated to the outside through the bumps, it is not necessary to use expensive members such as fins which increase the mounting area. A semiconductor integrated circuit device having a small mounting area can be manufactured at low cost because the selling price can be reduced by, for example, about 10% as compared with the conventional semiconductor device and a simple manufacturing technique is used.

[Brief description of drawings]

FIG. 1 is a plan view showing a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a printed wiring board used in a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 4 is a plan view showing a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 7 is a schematic side view showing a ball bonding method used in a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 8 is a schematic side view showing a ball bonding method used in a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 9 is a schematic side view showing a ball bonding method used in a manufacturing process of a semiconductor integrated circuit device which is an embodiment of the present invention.

FIG. 10 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a semiconductor integrated circuit device which is another embodiment of the present invention.

FIG. 12 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a semiconductor integrated circuit device which is another embodiment of the present invention.

FIG. 14 is a sectional view showing a semiconductor integrated circuit device according to another embodiment of the present invention.

[Explanation of symbols]

 1 IC chip 2 Electrode pad 3 Heat dissipation pad 4 Bump 4a Anchor part 5 Printed wiring board 5a Chip mounting part 5b Wiring 6 Adhesive 7 Bonding wire 8 Sealing resin 9 Capillary 10 Bonding wire 11 Ball 12 Torch 13 Metal plate 14 Pin 15 Wiring board 15a Wiring 15b Wiring 16 Electrode bump 17 Fin 18 Wiring board

Claims (8)

[Claims] 1. A semiconductor integrated circuit device, wherein ball-shaped bumps made of a metal material are provided on a heat dissipation pad of an IC chip on which a semiconductor integrated circuit is formed. 2. The semiconductor integrated circuit device according to claim 1, wherein the ball-shaped bumps made of the metal material are stacked in at least two stages. 3. The semiconductor integrated circuit device according to claim 1, wherein the ball-shaped bumps made of a metal material are stacked in at least two stages, and a metal plate is interposed between them. A semiconductor integrated circuit device characterized in that. 4. The semiconductor integrated circuit device according to claim 1 or 2, wherein pins made of metal are provided on the ball-shaped bumps made of the metal material. 5. The semiconductor integrated circuit device according to claim 1, 2, 3, or 4, wherein the ball-shaped bumps made of the metal material are mainly made of a metal having ductility. Circuit device. 6. The semiconductor integrated circuit device according to claim 1, 2, 3, 4, or 5, wherein the ball-shaped bumps made of the metal material are mainly made of gold. . 7. A step of forming a ball-shaped bump made of a metal material on a heat dissipation pad of an IC chip on which a semiconductor integrated circuit is formed by a ball bonding method,
A step of stacking ball-shaped bumps made of a metal material on the bumps by a ball bonding method to form the bumps. 8. A step of forming ball-shaped bumps made of a metal material by a ball bonding method on a heat dissipation pad of an IC chip on which a semiconductor integrated circuit is formed,
A step of forming a heat dissipation pin on the bump, the method for manufacturing a semiconductor integrated circuit device.