TW408090B - Low-fire dielectric ceramic compositions - Google Patents

Low-fire dielectric ceramic compositions Download PDF

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TW408090B
TW408090B TW88105753A TW88105753A TW408090B TW 408090 B TW408090 B TW 408090B TW 88105753 A TW88105753 A TW 88105753A TW 88105753 A TW88105753 A TW 88105753A TW 408090 B TW408090 B TW 408090B
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ceramic
dielectric
bacu02
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Shr-Chang Lin
Jau-He Jian
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Advanced Ceramic X Corp
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Abstract

The present invention relates to a dielectric composition which can be densified at a temperature no higher than 1100 DEG C and can provide ceramic products with a dielectric constant in the range of 1500 to 3000 and a dielectric loss less than 5% at 1MHz. The dielectric composition comprises from 0.1 to 10 wt% BaCu02-Cu0 and from 99.9 to 90 wt% BaTi03. Laminated dielectric ceramic devices can be prepared by mixing the composition of the present invention with organic solvent, polymer binder and plasticizer, forming a green sheet from the mixture by tape casting, screen printing and laminating the green sheets, and then confirming the laminated product with Ag-Pd electrode having low Pd content.

Description

__4P809Q___ 五、發明說明(1) 【發明領域】 本發明乃與介電陶瓷材料相關,特別是針對應用於積 層介電陶瓷元件所需的介電材料。本發明介電陶曼組合物. 可以在低溫燒結緻密’提供具高介電係數與低介電損失 的產品。 . 【發明背景】 鈦酸鋇是目前製造陶瓷電容器最常使用之陶竟材料, 因其燒結緻密溫度一般不低於1 2 50 °c,所以在製作積層元 件時必須使用含有尚P d量之A g - P d導體膏、又由於p d價節 ) 節上升、致使製造積層陶瓷電容元件成本隨之提高、喪失 應有的競爭力、因此利用燒結助劑(sintering aids)降低 鈦酸鋇的燒結緻密溫度、進而降低Ag_pd導體膏内pd含 ’ 量、將疋積層陶究電谷元件製造者所必須努力方向之一。— 文獻上已知可滿足上述需求的燒結助劑如Bi2〇3,__4P809Q___ V. Description of the Invention (1) [Field of the Invention] The present invention relates to dielectric ceramic materials, and particularly relates to the dielectric materials required for application to laminated dielectric ceramic components. The dielectric Taurman composition of the present invention can be sintered and compacted at low temperature to provide products with high dielectric constant and low dielectric loss. [Background of the Invention] Barium titanate is the most commonly used ceramic material for the manufacture of ceramic capacitors. Because its sintering density is generally not lower than 1 2 50 ° c, it must be used in the production of multilayer components. A g-P d conductor paste, and due to the increase in the price of pd, the cost of manufacturing multilayer ceramic capacitors will increase, and due competitiveness will be lost. Therefore, sintering aids are used to reduce the sintering of barium titanate. Dense temperature, and further reduce the content of pd in Ag_pd conductor paste, one of the directions that must be strived by the manufacturer of the electric valley device. — Sintering aids such as Bi203 which are known in the literature to meet the above requirements,

CdO ’ PbO與1〇3。然而這些氧化物均會降低鈦酸鋇之介電 係數,CdO與PbO則具有毒性’ b2〇3則會與水系漿料内的聚 乙烯醇(Poly(vinyl alc〇h〇i) ;pVA;)反應,增加製造上複 雜性。。因此,選擇一適當燒結助劑降低鈦酸鋇燒結溫度至,Υ ) 11 〇〇 C或更低,且無上述環保與製程複雜性問題,是本發 明所欲揭露。 【先前技藝】CdO 'PbO and 103. However, these oxides will reduce the dielectric constant of barium titanate, CdO and PbO are toxic 'b2 03 will be with polyvinyl alcohol in aqueous slurry (Poly (vinyl alc〇h〇i); pVA;) Response, increasing manufacturing complexity. . Therefore, selecting an appropriate sintering aid to reduce the sintering temperature of barium titanate to Υ 1 100 ° C or lower, without the aforementioned environmental protection and process complexity issues, is what the present invention intends to disclose. [Previous skill]

第5頁 __408090__ 五、發明說明(2) 美國專利第5, 262,368號所揭示的低溫、高介電陶瓷 材料係含BaT i03 ’ SrT i03 ’ BaZr03 MnS04,W03,Mo〇3 與 BaCu02 ’此系統的燒結溫度為11 〇 〇 °c,且其介電係數為 800 0至lOOOO(iKHz)而介電損失不及3%。 美國專利第5,4 6 1,0 1 4號所揭示的低溫、高介電陶竟 材料係含PbCMgANb/dOs,PbTi03 .PbUni/gNMdOs, “(?61/01)1/2)〇3與3&(:11〇2‘’此系統的燒結溫度為i〇5〇t:, 且其介電係數為70 00至8 000 ( ΙΚΗζ)而介電損失不及3 %。 中華民國專利公報公告號第1 5 9 8 3 0號所揭示高介電.陶 究材料則含卩13(11轻〗/3肋2/3)03-?1)1^03-?13(2111/3叫/3)03,此 系統的燒結溫度低於1000 1且具8000至10000之介電係 數。 由前述說明可知’業界仍急需具低燒結溫度與高介電 係數及低介電損失之介電陶瓷材料。本發明即針對此一需 求所為之研發。 【發明概述】 本發明係提供一新穎介電組合物,其可以液相燒結万 式、於低溫燒結’而提供具高介電係數與低介電損失之介 電陶瓷材料。本發明陶瓷組合物因其可低溫燒結之特性, 可與低Pd量之Ag-Pd導體相容,而得經由與前述導體共燒 以及叠壓之過程,而提供市場所需之積層型陶瓷電容元 件。Page 5__408090__ V. Description of the invention (2) The low temperature, high dielectric ceramic material disclosed in US Patent No. 5,262,368 contains BaT i03 'SrT i03' BaZr03 MnS04, W03, Mo〇3 and BaCu02 'This system The sintering temperature is 11000 ° C, and its dielectric coefficient is 800 to 1000 (iKHz) and the dielectric loss is less than 3%. The low-temperature, high-dielectric ceramic materials disclosed in U.S. Patent No. 5,4 6 1,0 1 4 contain PbCMgANb / dOs, PbTi03.PbUni / gNMdOs, "(? 61/01) 1/2) 〇3 and 3 & (: 11〇2``The sintering temperature of this system is 105 ℃, and its dielectric coefficient is 70,000 to 8,000 (ΙΚΗζ) and the dielectric loss is less than 3%. Republic of China Patent Gazette Announcement No. The high dielectrics disclosed in No. 1 5 9 8 3 0. The ceramic materials contain 卩 13 (11 light 〖/ 3 ribs 2/3) 03-? 1) 1 ^ 03-? 13 (2111/3 called / 3 ) 03, the sintering temperature of this system is lower than 1000 1 and has a dielectric coefficient of 8000 to 10000. From the foregoing description, it can be known that the industry still urgently needs dielectric ceramic materials with low sintering temperature, high dielectric constant and low dielectric loss. The present invention is developed for this need. [Summary of the Invention] The present invention provides a novel dielectric composition which can be sintered in liquid phase and sintered at low temperature to provide high dielectric constant and low dielectric loss. Dielectric ceramic material. The ceramic composition of the present invention is compatible with Ag-Pd conductors with a low Pd content due to its low-temperature sinterability, and can be co-fired and laminated with the aforementioned conductors. Process, while providing a laminated ceramic capacitor element required for the market.

408090 五、發明說明(3) 【發明詳細說明】 如業界所知,純鈦酸鋇是目前製'造陶瓷電容器最常使^ 用之陶瓷材料,因其燒結緻密溫度^般不低於1 2 5 0 °C ’所々 以在製作積層元件時必'須使用含有.高Pd量之Ag_Pd導體 膏、又由於Pd價節節上升、致使製造積層陶瓷電容元件成 本隨之提高、喪失應有的競爭力、因此利用燒結*助劑 (s i n t e r i ng a i d s)降低鈦酸鋇的燒姑緻密溫度、進而降低 Ag-Pd導體膏内Pd含量、將是積層陶瓷電容元件製造者所 必須努力重要課題之一。 , 本案發明人發現,於上述BaT i 03陶甍中加入 BaCu02-Cu0陶瓷,可有效降低燒結溫度至1100 °C或更低,、 而得到可與較低Pd含量之Ag-Pd導電膏共燒以製備高介電 係數與低介電損失之積層.型陶瓷電容元件。 特定言之,本發明主要關於一新穎介電組合物,其係 含依不同比例混合之二陶瓷成分,BaCu02-Cu0陶瓷與 BaT i 〇3陶瓷,該二陶瓷成分之比例並無特別限制,可梘所 需成品之性質而調整。較佳者,本發明介電組合物係含〇 1至10重量%BaCu02-Cu0陶瓷與99. 9至90重量%BaTiOs陶 竞’更佳為含0 1至2· 5重量%BaCu02-Cu0陶瓷及99. 9至 97. 5重量%BaTi03陶瓷- 於本發明組合物中,陶瓷BaCu〇2_Cu0係被定義為,,低 ) 溫燒結相”。由相圖得知,含同比例BaCu〇2與Cu〇共晶成分 之共晶溫度為9 2 6 °C。本發明BaCuO2-Cu0陶瓷成分較佳係 5 * %BaCu02 ί ϋ ^ -408090 V. Description of the invention (3) [Detailed description of the invention] As the industry knows, pure barium titanate is the most commonly used ceramic material for ceramic capacitors made at present, because its sintering compaction temperature is generally not lower than 1 2 50 ° C 'so that when manufacturing multilayer components, you must use the Ag_Pd conductor paste containing high Pd content, and due to the rising Pd price, the cost of manufacturing multilayer ceramic capacitors will increase, and due competition will be lost. Therefore, using sintering aids to reduce the densification temperature of barium titanate and further reduce the Pd content in the Ag-Pd conductor paste will be one of the important issues that manufacturers of multilayer ceramic capacitors must work hard. The inventor of this case found that adding BaCu02-Cu0 ceramic to the BaT i 03 pottery can effectively reduce the sintering temperature to 1100 ° C or lower, and obtain co-firing with Ag-Pd conductive paste with lower Pd content. In order to prepare a multilayer ceramic capacitor element with high dielectric constant and low dielectric loss. In particular, the present invention mainly relates to a novel dielectric composition containing two ceramic components, BaCu02-Cu0 ceramics and BaT i 〇3 ceramics, which are mixed in different ratios. The ratio of the two ceramic components is not particularly limited, but调整 Adjust the nature of the required finished product. Preferably, the dielectric composition of the present invention contains 0.1 to 10% by weight BaCu02-Cu0 ceramics and 99.9 to 90% by weight BaTiOs ceramics, and more preferably 0 1 to 2.5% by weight BaCu02-Cu0 ceramics. And 99.9 to 97.5% by weight BaTi03 ceramics-In the composition of the present invention, the ceramic BaCu〇2_Cu0 system is defined as, low temperature sintering phase. "It is known from the phase diagram that the same proportion of BaCu〇2 and The eutectic temperature of the Cu0 eutectic component is 9 2 6 ° C. The BaCuO2-Cu0 ceramic component of the present invention is preferably 5 *% BaCu02 ί ^ ^-

--_40809〇 五、發明說明⑷ ' ' 重量 %BaCu02 與5 0. 9 重量 %CuO。 本發明介電組合物主要係應用於積層陶瓷電容元件。-_ 於此應用中,須將$介電組合物與有機載體混合形成漿 料,再經刮刀成形程序而得生胚薄片,其後經網印導體 膏、疊壓與共燒等習知技術,製備而得積層陶瓷電容元 件。 因此’本發明亦關於一種用以製備電容陶瓷元件之漿 料,其係含: 70至85重量%介電材料’其含〇;1至1〇重量% BaCu02-Cu0陶竟與99. 9至90重量%BaTi〇3陶瓷;以及 30至15重量%有機載體。 於本發明漿料中’較佳介電材料係含0. 1至2· 5重量%--_ 40809〇 V. Description of the invention ⑷ '' weight% BaCu02 and 5 0.9 weight% CuO. The dielectric composition of the present invention is mainly applied to a multilayer ceramic capacitor element. -_ In this application, the dielectric composition must be mixed with an organic carrier to form a slurry, and then a green sheet can be obtained through a doctor blade forming process, followed by conventional techniques such as screen printing conductor paste, lamination and co-firing. , To obtain a multilayer ceramic capacitor element. Therefore, the present invention also relates to a paste for preparing a capacitor ceramic element, which contains: 70 to 85% by weight of a dielectric material, which contains 0; 1 to 10% by weight BaCu02-Cu0 ceramic and 99.9 to 90% by weight BaTi03 ceramic; and 30 to 15% by weight organic vehicle. 1 至 2 · 5 重量 % In the slurry of the present invention, the preferred dielectric material is from 0.1 to 2.5% by weight.

BaCu02-Cu0陶瓷與99. 9至97. 5重量%BaTi03陶瓷。其中, 8技(:11〇2-(^0陶瓷較佳係含4 5至55重量%83(:11〇2與5 5至45重 量%CuO,尤指含49. 1重量%BaCu〇2與50, 9重量%CuO。有 機載體較佳係含如聚乙二醇(pEG)、聚乙烯縮丁醛(PVB)及 聚乙烯醇(PVA)之黏結劑,如正丙醇、甲苯及乙醇之有機 溶劑,及如酞酸二丁醛(DBP )之塑化劑。 本發明另關於一種製備介電陶究元件之方法’其包 括: 將本發明漿料製成生胚;及將此生胚於不高於11 0 0 °c 之溫度進行緻密化。其中,燒結步驟係包括脫脂與燒結二 階段’且較佳係於空氣或氮/氫氣氛中進行。如熟悉此項 技藝者所知,該脫脂階段係為清除生胚内之有機黏結劑,BaCu02-Cu0 ceramics and 99.9 to 97.5 weight percent BaTi03 ceramics. Among them, the 8-tech (: 11〇2-(^ 0 ceramics preferably contain 45 to 55 wt% 83 (: 110 and 55 to 45 wt% CuO, especially 49.1 wt% BaCu〇2). And 50, 9% by weight of CuO. The organic carrier is preferably a binder such as polyethylene glycol (pEG), polyvinyl butyral (PVB), and polyvinyl alcohol (PVA), such as n-propanol, toluene, and ethanol. Organic solvents, and plasticizers such as dibutyl phthalate (DBP). The present invention also relates to a method for preparing a dielectric ceramic element, which includes: making a slurry of the present invention into a green embryo; and the green embryo Densification is performed at a temperature not higher than 1 100 ° C. Among them, the sintering step includes two stages of degreasing and sintering, and is preferably performed in air or nitrogen / hydrogen atmosphere. As known to those skilled in the art, The degreasing stage is to remove organic binders from the raw embryo.

第8頁Page 8

---40&49Q 五、發明說明(5) 燒結階段則可使胚體緻密化。於本發明方法中,較佳係 900至1 1 〇〇 °C之溫度進行燒結歷30至1 20分鐘,更佳係& . 1 0 0 0至11 0 0 °C進行3 0至1 2 0分鐘。所得之介電陶瓷元姓、 1千方1 MHz具1500至300 0介電係數與卜5%介電損失,龠合業界^ 介電係數與低介電損失求----- 本發明尚關於一種.製備積層介電陶竞元件之-芳法, 包括於陶瓷生胚薄片上網印低Pd含量之Ag-Pd導體電極,其 疊壓製成積層陶瓷生胚,及緻密化該積層生胚,其特徵 於用以製備該陶瓷生胚薄片之陶瓷材料係含如下成*分建、, 電組合物: " 0. 1至10重量%BaCu02-Cu0陶瓷;及 99. 9至90重量%BaTi03陶瓷。 該介電組合物較佳係含〇. 1至2. 5重量%BaCu02-Cu0陶 瓷與99. 9至97. 5重量%BaTi〇3陶瓷。其中,BaCu02-Cu0陶 竟較佳係含4 5至55重量%仏(:11〇2與55至45重量%(:11〇’尤 指含49. 1重量%BaCu02與50. 9重量%CuO。 下列實施例係用以進一步說明本發明,但不限制本發 明範圍。凡熟悉此項技術之人士所知之替代與修飾,均仍 涵蓋於本發明之精神和範圍内。 【實施例一】 在此實施例中,首先製備BaCu02 + Cu0 : 以83〇:仁11〇= 28:72莫耳比例,量取純度99.5%以上 的BaCOs、CuO各44. 2 、45,8克,將這些陶瓷粉末加入已--- 40 & 49Q V. Description of the invention (5) The sintering stage can make the embryo compact. In the method of the present invention, the sintering is preferably performed at a temperature of 900 to 11000 ° C for 30 to 120 minutes, and more preferably &. 1 0 0 to 1 1 0 0 ° C for 3 0 to 1 2 0 minutes. The obtained dielectric ceramic surname, 1 square meter 1 MHz has a dielectric coefficient of 1500 to 300 0 and a dielectric loss of 5%, which is a combination of the industry's dielectric constant and low dielectric loss. Regarding a method for preparing a laminated dielectric ceramic element, an aromatic method includes printing an Ag-Pd conductor electrode with a low Pd content on a ceramic green sheet, which is laminated to form a laminated ceramic green embryo, and densifying the laminated green embryo, It is characterized in that the ceramic material used to prepare the ceramic green sheet contains the following components, electrical composition: " 0.1 to 10% by weight BaCu02-Cu0 ceramic; and 99.9 to 90% by weight BaTi03 ceramics. The dielectric composition preferably contains 0.1 to 2.5% by weight BaCu02-Cu0 ceramics and 99.9 to 97.5% by weight BaTi03 ceramics. Among them, BaCu02-Cu0 ceramics preferably contain 45 to 55 wt% 仏 (: 11〇2 and 55 to 45% by weight (: 11〇 ', especially 49.1 wt% BaCu02 and 50.9 wt% CuO) The following examples are provided to further illustrate the present invention, but not to limit the scope of the present invention. Any substitutions and modifications known to those skilled in the art are still covered within the spirit and scope of the present invention. [Example 1] In this embodiment, BaCu02 + Cu0 is first prepared: at a ratio of 83: 1111 = 28:72 mole, BaCOs and CuO each having a purity of more than 99.5% are measured in 42.2 and 45,8 grams, and these ceramics are Powder added

五、發明說明(6) ^〇8〇9(7 裝有2000克Zr〇2磨球’及220毫升異丙醇(2-propyl a 1 coho 1 )的一公升PE塑膠罐中,球磨24小時,經與ZST球 相同的過篩、烘乾,研磨等步驟,再於85〇鍛燒丨2小 時’鍛燒完畢的粉末經研缽與杵研磨,再以相同的球磨條 件’球磨4 8小時,經相同的過篩、烘乾,及以研蛛與杵研 磨的條件’所得的粉末即為BaCu02 + Cu0化合物陶瓷粉末, 以下簡稱為BCC。另外、BaCu02粉末亦利用相同製程製 備,以下簡稱為BC。 另外 ’ BaTi03 則使用來自 TAM Ceramic Corp. (USA)商 業化之粉末(TICON-HPB)。 量取總重20克純BaT i 03陶瓷粉末,加入25cc的正丙 醇(l-propyl alcohol)及5wt% 聚乙二醇(polyethylene glycol 200 ’PEG 200) ’及氧化鋁磨球46克’以三度空間 懸臂混粉機混合2小時’在8 0 °C烘乾1小時後以研绰與杵研 磨。如非特別說明,試片均為量秤粉末1. 3克,放入直徑 1.3公分的圓形壓模以9MPa的壓力,維持15秒,將粉末壓 片成生胚。將準備好的生胚在950-1100 X:燒結120分 鐘。燒結製程主要分成二階段。第一階段為脫脂。生胚在 5 C / m i η的加熱速度下,緩慢清除生胚内的有機黏結劑, 為確實完全清除’溫度在5 0 0 t:停留一小時。第二階段則 在大氣的氣氛下’將試片直接推入爐中。試片在5分鐘内 達燒結溫度後,燒結溫度分別是950 ( 1 A),1 000 ( 1 B), 1 050 ( 1 C),ii〇〇°C(id),再停留60分鐘,將試片夾出,空 冷以停止燒結。利用阿基米德原理量得燒結體的密度,在V. Description of the invention (6) ^ 〇8〇9 (7) In a one-liter PE plastic jar containing 2000 g of Zr〇2 grinding balls' and 220 ml of isopropyl alcohol (2-propyl a 1 coho 1), ball milling for 24 hours After the same sieving, drying, and grinding steps as the ZST ball, it is calcined at 85 ° for 2 hours. The calcined powder is ground with a mortar and pestle, and then the same ball milling conditions are used for ball milling for 4 8 hours. The powder obtained after the same sieving, drying, and grinding under the conditions of grinding spider and pestle is BaCu02 + Cu0 compound ceramic powder, hereinafter referred to as BCC. In addition, BaCu02 powder is also prepared by the same process, hereinafter referred to as BC. In addition, 'BaTi03 uses commercially available powder (TICON-HPB) from TAM Ceramic Corp. (USA). Measure 20 grams of pure BaT i 03 ceramic powder and add 25cc of l-propyl alcohol. And 5wt% polyethylene glycol 200 ('PEG 200)' and 46 g of alumina grinding balls 'mixed with a three-dimensional space cantilever mixer for 2 hours' and dried at 80 ° C for 1 hour. Grinding with a pestle. Unless otherwise specified, the test pieces are measuring powder 1. 3g, 1.3 cm in diameter The circular stamper is maintained at a pressure of 9 MPa for 15 seconds, and the powder is compressed into green embryos. The prepared green embryos are sintered at 950-1100 X: 120 minutes. The sintering process is mainly divided into two stages. The first stage is degreasing. Under the heating speed of 5 C / mi η, the organic binders in the raw embryos are slowly removed. In order to completely remove the embryos, the temperature is 500 t: stay for one hour. In the second stage, it will be in an atmospheric atmosphere. The test piece is directly pushed into the furnace. After the test piece reaches the sintering temperature within 5 minutes, the sintering temperatures are 950 (1 A), 1,000 (1 B), 1 050 (1 C), and iiOO ° C (id ), Stay for another 60 minutes, clamp out the test piece, and air-cool to stop sintering. Use Archimedes' principle to measure the density of the sintered body.

第10頁 -——-i〇.8Q9jQ_____ 五、發明說明(7) -- 此實施例中得到的結果列於表一,燒結密度均低於5 〇 , g m / c m ,由燒結體斷裂面的掃晦式電子顯微照片得知其微一 結構呈多孔狀’相對燒結密度均低於8 〇 %。 ‘ 【實施例二】 本實施例除了介電成分改為2· 5wt% BC與97. 5 wt%Page 10 ————- i〇.8Q9jQ _____ 5. Description of the Invention (7)-The results obtained in this example are listed in Table 1. The sintered densities are all lower than 5.0, gm / cm. Scanning electron micrographs show that the micro-structure is porous, and the relative sintering densities are less than 80%. ‘[Embodiment 2] In addition to the dielectric component of this embodiment, 2.5 wt% BC and 97. 5 wt%

BaT i tv外’其餘製程與量測程序均與實施例一相同。準備 好的生胚仍分成四組,分別在95〇(2A),10〇〇(2B), 1050(2C),ll〇〇°c(2D)燒結60分鐘。其燒結密度列於表一 中,燒結密度均低於5· 〇 gm/cm3,由燒結體斷裂面的掃瞄_ 式電子顯微照片得知其微結構呈多孔狀,相對燒結密度均1 低於9(3%。 & 【實施例三】 本實施例除了介電成分改為5wt%BC與95wt%The remaining processes and measurement procedures outside BaT i tv are the same as those in the first embodiment. The prepared raw embryos were still divided into four groups, which were sintered at 95 (2A), 100 (2B), 1050 (2C), and 100 ° C (2D) for 60 minutes. The sintered densities are listed in Table 1. The sintered densities are all lower than 5.0 gm / cm3. Scanning electron micrographs of the fractured surface of the sintered body show that the microstructure is porous, and the relative sintered densities are both low. In 9 (3%. &Amp; [Example 3] In this example, except that the dielectric component is changed to 5wt% BC and 95wt%

BaT i 〇3外’其餘製程與量測程序均與實施例一相同。準備 好的生胚仍分成四組,分別在95〇(3A), 1〇〇〇(3Β), l〇50(3C)’ ll〇〇°c(3D)燒結60分鐘。其燒結密度與介電結 果均列於表一中’燒結密度均高於5. 〇 gm/cm3,由燒結體 斷裂面的掃瞄式電子顯微照片得知其微結構非常緻密,相1 對燒結密度均高於95%。所得之介電陶瓷元件於1 具 1100至1300介電係數與5-10%介電損失。 【實施例四】The remaining processes and measurement procedures of BaT i 03 are the same as those of the first embodiment. The prepared raw embryos were still divided into four groups, which were sintered at 95 ° (3A), 1000 (3B), 105 (3C) '110 ° C (3D) for 60 minutes. The sintered density and dielectric results are listed in Table 1. 'The sintered densities are higher than 5.0 gm / cm3. The scanning electron micrographs of the fracture surface of the sintered body show that the microstructure is very dense. The sintered density is higher than 95%. The obtained dielectric ceramic element has a dielectric constant of 1100 to 1300 and a dielectric loss of 5-10%. [Example 4]

第11頁 --40809η_ 五、發明說明(8) 本實施例除了介電成分改為l〇wt %BC與90wt% BaTi03 外’其餘製程與量測程序均與實施例一相同。準備好的生 胚仍分成四組’分別在950( 4A),1〇〇〇(4B), 1 0 50 ( 40, 1 1 0 0 °C (4D)燒結60分鐘。其燒結密度與介電結果均列於表 一中’燒結密度均高於5.0 gm/cm3,由燒結體斷裂面的掃 猫式電子顯微照片得知其微結構非常緻密,相對燒結密度 均高於95%。所得之介電陶瓷元件於1 mHz具600至1000介 電係數與15-25%介電損失。 【實施例五】 本實施例除了介電成分改為2. 5wt %BCC與97. 5wt% B a T i 〇3外,其餘製程與量測程序均與實施例一相同。準備 好的生胚仍分成四組,分別在95 0 ( 5A),1〇〇〇(5Β), 1050(5C),1100 C(5D)燒結60分鐘。其燒結密度與介電結 果均列於表一中,燒結密度在1 〇 5 0 °C以上均高於5. 〇 gm/cm3 ’由燒結體斷裂面的掃瞄式電子顯微照片得知其微 結構非常緻密,相對燒結密度均高於95%。所得之介電陶 瓷元件於1 MHz具1 800至230 0介電係數與2. 5-3. 0%介電損 失。 【實施例六】 本實施例除了介電成分改為5wt%BCC與95wt% BaTi03 外,其餘製程與量測程序均與實施例一相同。準備好的生 胚仍分成四組,分別在950(6A), 1000(6B), l〇50(6C),Page 11 --40809η_ V. Description of the invention (8) Except that the dielectric composition is changed to 10wt% BC and 90wt% BaTi03, the remaining processes and measurement procedures are the same as those in the first embodiment. The prepared raw embryos are still divided into four groups, sintered at 950 (4A), 1000 (4B), 1050 (40, 110 ° C (4D) for 60 minutes. The sintering density and dielectric The results are listed in Table 1. 'The sintered densities are all higher than 5.0 gm / cm3. From the scanning cat electron micrograph of the fracture surface of the sintered body, it is known that the microstructure is very dense and the relative sintered densities are higher than 95%. 5wt% BCC 与 97. 5wt% B a T The dielectric ceramic element has a dielectric coefficient of 600 to 1000 and a dielectric loss of 15-25% at 1 mHz. Except for 〇3, the rest of the manufacturing process and measurement procedures are the same as in Example 1. The prepared raw embryos are still divided into four groups, respectively at 95 0 (5A), 1000 (5B), 1050 (5C), 1100 C (5D) is sintered for 60 minutes. The sintered density and dielectric results are shown in Table 1. The sintered density is higher than 5.0 ° C and higher than 5.0 ° gm / cm3. The electron micrograph shows that the microstructure is very dense, and the relative sintering density is higher than 95%. The obtained dielectric ceramic element has a dielectric coefficient of 1 800 to 230 0 at 1 MHz and a dielectric constant of 2.5 to 3.0%. Electricity loss. [Example 6] In this example, except that the dielectric composition was changed to 5wt% BCC and 95wt% BaTi03, the remaining processes and measurement procedures were the same as in Example 1. The prepared raw embryos were still divided into four groups, each at 950 ( 6A), 1000 (6B), 105 (6C),

第12頁 五、發明說明(9) 408090 11 0 0 °C ( 6 D)燒結1 6 0分鐘。其燒結密度與介電結果均列於 表一中,燒結密度在1 0 0 0 t:以上均高於5 · 〇 gm/ cm3,由燒 結體斷裂面的掃瞄式電子顯微照片得知其微結構非常緻 密’相對燒結密度均高於95%。所得之介電陶瓷元件於 1 MHz具1100至1600介電係數與9, 5-13.0%介電損失。 【實施例七】 本實施例除了介電成分改為丨〇wt %BCC與90wt%Page 12 V. Description of the invention (9) 408090 11 0 0 ° C (6 D) Sintering for 160 minutes. The sintered density and dielectric results are listed in Table 1. The sintered density is 1000 t: the above are all higher than 5.0 gm / cm3. The scanning electron micrographs of the fracture surface of the sintered body show that The microstructures are very dense 'and their relative sintered densities are higher than 95%. The obtained dielectric ceramic element has a dielectric constant of 1100 to 1600 and a dielectric loss of 9, 5-13.0% at 1 MHz. [Embodiment 7] In this embodiment, except that the dielectric composition is changed to 〇wt% BCC and 90wt%

BaT i 〇3外’其餘製程與量測程序均與實施例一相同。準備 好的生胚仍分成四組’分別在95〇(7A),1〇〇〇(7B), 1050(7C)’ 1100 C(7D)燒結60分鐘。其燒結密度與介電結 果均列於表一中,燒結密度在95〇以上岣高於5 〇 斷裂面的掃瞄式電子顯微照片得知其微 ⑺構非吊緻畨,相對燒結密度均高於95%。 ,元件於具75 0至1 2 00介電係數與8冬4〇_〇%介電損The remaining processes and measurement procedures of BaT i 03 are the same as those of the first embodiment. The prepared raw embryos were still divided into four groups, sintered at 95 (7A), 1000 (7B), 1050 (7C) 'and 1100 C (7D) for 60 minutes. The sintered densities and dielectric results are listed in Table 1. Scanning electron micrographs of sintered densities above 95 ° and higher than 50 ° fracture surfaces revealed that their microstructures were non-suspended and the relative sintered densities were uniform. Above 95%. , The device has a dielectric constant of 75 0 to 1 2 00 and a dielectric loss of 4 0_0% in winter.

第13頁 寸(mtrao 五、發明說明(10) 表 置驗結果 Η施例 燒結密度 (gm/cm7) 栢對密度 (%) 燒結時間 (min) 介電係數 (@1ΜΗζ) 介電損失 (%)(@1MH2) 丄A 3.125 53.8 60 - - 1B 3.522 60.7 60 - - 1C 4.125 71.1 60 - - ID 4.485 77.3 60 - - 2A 4.264 73.5 60 - - ΞΒ 4.726 81.5 60 - - 2C 4.989 86.0 60 - - 2D 4.916 84.7 60 - - 3Α 5.252 90.5 60 1135 8.64 3Β 5.418 93.4 60 1089 7.68 3C 5.627 97.0 60 1252 10.20 3D 5.679 97.9 60 1172 7.51 4A 5.615 96.8 60 997 16.8 4B 5.737 98.9 60 797 23.3 4C 5.792 99.8 60 709 25.3 4D 5.681 97.9 60 692 23.9 5A 3.824 65.9 60 - - 5B 4.861 83.8 60 - 5C 5.776 99.5 60 2284 2.62 5D 5.756 99.2 60 1829 2.87 6A 4.684 80.7 60 - - 6B 5.206 89.7 60 - - 6C 5.394 93.0 60 1187 9.60 6D 5.535 95.4 60 1535 12.90 7A 5.396 93.0 60 759 8.02 7B 5.787 99.8 60 936 35.52 7C 5.745 99.1 60 丄C62 32.85 7D 5.757 99.3 60 1153 33.15Page 13 inch (mtrao V. Description of the invention (10) Table test results Η Example sintered density (gm / cm7) Pak pair density (%) Sintered time (min) Dielectric coefficient (@ 1ΜΗζ) Dielectric loss (% ) (@ 1MH2) 丄 A 3.125 53.8 60--1B 3.522 60.7 60--1C 4.125 71.1 60--ID 4.485 77.3 60--2A 4.264 73.5 60--ΞΒ 4.726 81.5 60--2C 4.989 86.0 60--2D 4.916 84.7 60--3Α 5.252 90.5 60 1135 8.64 3B 5.418 93.4 60 1089 7.68 3C 5.627 97.0 60 1252 10.20 3D 5.679 97.9 60 1172 7.51 4A 5.615 96.8 60 997 16.8 4B 5.737 98.9 60 797 23.3 4C 5.792 99.8 60 709 25.3 4D 5.681 97.9 60 692 23.9 5A 3.824 65.9 60--5B 4.861 83.8 60-5C 5.776 99.5 60 2284 2.62 5D 5.756 99.2 60 1829 2.87 6A 4.684 80.7 60--6B 5.206 89.7 60--6C 5.394 93.0 60 1187 9.60 6D 5.535 95.4 60 1535 12.90 7A 5.396 93.0 60 759 8.02 7B 5.787 99.8 60 936 35.52 7C 5.745 99.1 60 丄 C62 32.85 7D 5.757 99.3 60 1153 33.15

第14頁 --408000--- 五、發明說明(11) 在上述的實施例(例一〜例七)中,只有實施例五含有 2. 5 %BCC的介電成分可在低溫(1050 °C)完成95%以上的緻' .密化、並同時可達到高介電係數(〜2 0 0 0 )與低介電損失 (〈3%)。由於完成高緻密化所需的燒結溫度與低Pd含量的 Ag-Pd導體相容、故可與其共燒製造積層陶瓷電容器》 在上述的實施例五中的介電成分所需的燒結♦溫度與低 Pd含量的Ag-Pd導體相容、故可與其共燒製造積層陶瓷電 容器。在製程上首先必須將上述的陶瓷成分與有機溶劑如 甲苯與乙醇,有機黏結劑如聚乙烯縮丁醛(PVB)及塑化劑 如吮酸二丁酯(D BP )混合形成漿料,經刮刀成形產製厚度 約為1 2 5微米的生胚薄片,然後經沖片裁成1 〇公分見方的 生胚薄片。經網印將導體膏如Ag-Pd在生胚薄片上製成電 極。網印好的生胚薄片再依序堆疊,經疊壓製成積層陶瓷 生胚’疊壓的條件為6〇-1〇〇。〇與looo— 300 0 psi。最後、 積層介電陶瓷生胚在空氣氣氛中經脫脂與共燒完成緻密 化0 貫施例中的介電成分亦可經由傳統製程如乾壓、冷均 壓與熱均壓製成各種不同形狀與不同用途的陶瓷體。以乾 壓為例’陶瓷粉末可與水與黏結劑如聚乙烯醇(pVA )混 合,經喷霧造粒後改進粉體的流動性,再經乾壓、脫脂與 '」 燒結即可製成介電陶瓷成品。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限疋本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作各種之更動與潤飾,因此本發明之保護Page 14--408000 --- 5. Description of the invention (11) In the above-mentioned embodiments (examples 1 to 7), only the fifth embodiment containing a dielectric component containing 2.5% BCC can be at low temperature (1050 ° C) Densification of more than 95% is completed, and at the same time, high dielectric constant (~ 2000) and low dielectric loss (<3%) can be achieved. Since the sintering temperature required to complete high densification is compatible with Ag-Pd conductors with low Pd content, it can be co-fired to manufacture multilayer ceramic capacitors. The sintering temperature required for the dielectric components in the fifth embodiment described above Ag-Pd conductors with low Pd content are compatible, so they can be co-fired to make multilayer ceramic capacitors. In the manufacturing process, the above-mentioned ceramic components must first be mixed with organic solvents such as toluene and ethanol, organic binders such as polyvinyl butyral (PVB) and plasticizers such as dibutyl sulfate (D BP) to form a slurry. The blade was formed into a green embryo sheet with a thickness of about 125 micrometers, and then punched into a 10 cm square green embryo sheet. A conductor paste such as Ag-Pd is made into an electrode on a green sheet by screen printing. The green-printed green embryo flakes are then stacked in order, and laminated ceramics are laminated to produce green-laminated ceramics. The conditions for lamination are 60-100. 〇With looo—300 0 psi. Finally, the laminated dielectric ceramic green body is densified and co-fired to complete densification in the air atmosphere. The dielectric components in the examples can also be made into various shapes and shapes through traditional processes such as dry pressing, cold equalizing, and hot equalizing. Ceramic bodies for different uses. Taking dry pressing as an example, 'ceramic powder can be mixed with water and a binder such as polyvinyl alcohol (pVA). After spray granulation, the powder's fluidity can be improved. Then dry pressing, degreasing and' '' sintering can be made Finished dielectric ceramic. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. Invention protection

&quot;ttWW 五、發明說明C12) 範圍當視後附之申請專利範圍所界定者為準 ΙΒΙΪ 第16頁&quot; ttWW V. Invention Description C12) Scope shall be determined by the scope of the attached patent application ΙΒΙΪ page 16

Claims (1)

六、申請專利範圍 «08090 1. 一種介電組合物,其係含: ° 0.1至1〇重量%368(:11〇2-(:11〇陶瓷,該陶瓷含45至55重量:. % BaCu02與55至45重量%CuO ;以及 99· 9至90重量%BaTi03陶瓷。 2. 如申請專利範圍第1項所述之介電組合物,其係 含: - 0. 1至2. 5重量%BaCu02-Cu0陶瓷;以及 99. 9 至97. 5 重量% BaTi03 陶瓷。 3 ·如申請專利範圍第1項所述之介電組合物’其中該 BaCu02-CuO 陶瓷係含49. 1 重量% BaCu02 及50. 9 重量%CuO。 4. 一種用以製備介電陶瓷元件之漿料,其係含: 7 0至85重量%根據申請專利範圍第1項所述之介電組合 物;以及 30至15重量%有機載體。 5. 如申請專利範圍第4項所述之漿料,其中該有機载 體係含有機溶劑、有機黏結劑及有機塑化劑。 6. —種製備介電陶瓷元件之方法,其包栝將根據申讀 專利範圍第4項之所述漿料製成生胚;以及,於不高於 11 0 0 °C之溫度緻密化該生胚。 7. 如申請專利範園第6項所述之方法,其中該緻密化 步驟係包括脫脂與燒結二階段。 8. 如申請專利範圍第7項所述之方法,其中該燒結 階段係於9 0 0至1 1 0 0 °C之溫度進行1 5至1 5 0分减° 9. 如申請專利範園第6項所述之方法,其中該緻密化Sixth, the scope of patent application «08090 1. A dielectric composition containing: ° 0.1 to 10 wt% 368 (: 110-(: 110) ceramic, the ceramic contains 45 to 55 weight:.% BaCu02 And 55 to 45% by weight of CuO; and 99.9 to 90% by weight of BaTi03 ceramics. 2. The dielectric composition as described in claim 1 of the patent application scope, which comprises:-0.1 to 2.5% by weight BaCu02-Cu0 ceramics; and 99.9 to 97.5% by weight BaTi03 ceramics. 3. The dielectric composition according to item 1 of the scope of patent application, wherein the BaCu02-CuO ceramic system contains 49.1% by weight BaCu02 and 50. 9 wt% CuO. 4. A paste for preparing a dielectric ceramic element, comprising: 70 to 85% by weight of the dielectric composition according to item 1 of the scope of patent application; and 30 to 15 % Organic carrier by weight. 5. The slurry as described in item 4 of the scope of patent application, wherein the organic carrier contains organic solvents, organic binders and organic plasticizers. 6. A method for preparing a dielectric ceramic element, Its burden will be to make green embryos according to the slurry described in item 4 of the patent application; and The raw embryo is densified at a temperature of ° C. 7. The method as described in item 6 of the patent application park, wherein the densification step includes two stages of degreasing and sintering. 8. As described in item 7 of the scope of the patent application Method, wherein the sintering stage is performed at a temperature of 900 to 1100 ° C for 15 to 150 minutes minus ° 9. The method according to item 6 of the patent application park, wherein the densification 第17頁 申請專利範圍 408090 六 係於空氣或氮/氫氫氛I行。 ίο. —種製備積層介電陶瓷元件之方法,其包括於陶1 瓷生胚薄片上網印低Pd含量之Ag-Pd導體電極,疊壓製成 積層陶瓷生胚’及緻密化該積層生胚,其特徵在於用以製 備該陶瓷生胚薄片之陶瓷材料係含如下成分之介電組合 物: 0. 1至10重量%BaCu02-Cu0陶瓷,該陶瓷含45至55重 量?ή BaCu02與55至45重量%CuO ;以及 99. 9至90重量%BaTi03陶瓷。 11 .如申請專利範圍第1 〇項之方法,其中該介電組合 物係含0· 1至2. 5重量%BaCu02-Cu0陶瓷;及99. 9至97· 5重 量% BaTi03陶兗。 1 2.如申請專利範圍第丨〇項之方法,其中該介電组合 物之陶瓷係含49. 1重量% BaCu02及50. 9重t%CuO。Page 17 The scope of patent application 408090 VI is in the air or nitrogen / hydrogen hydrogen atmosphere. ίο. — A method for preparing a laminated dielectric ceramic element, which comprises printing an Ag-Pd conductor electrode with a low Pd content on a ceramic 1 ceramic green sheet, laminating it to produce a laminated ceramic green embryo, and densifying the laminated green embryo, It is characterized in that the ceramic material used to prepare the ceramic green sheet is a dielectric composition containing the following components: 0.1 to 10% by weight BaCu02-Cu0 ceramic, which contains 45 to 55 weight? BaCu02 with 55 to 45% by weight CuO; and 99.9 to 90% by weight BaTi03 ceramics. 11. The method of claim 10, wherein the dielectric composition comprises 0.1 to 2.5% by weight BaCu02-Cu0 ceramics; and 99.9 to 97.5% by weight BaTi03 ceramics. 1 2. The method according to the scope of application for patent, wherein the ceramic of the dielectric composition contains 49.1% by weight BaCu02 and 50.9% by weight t% CuO. 第18頁Page 18
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI587332B (en) * 2015-07-01 2017-06-11 Holy Stone Enterprise Co Ltd Method for manufacturing electrode of chip ceramic capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI587332B (en) * 2015-07-01 2017-06-11 Holy Stone Enterprise Co Ltd Method for manufacturing electrode of chip ceramic capacitor

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