TW396370B - Liquid crystal displays, manufacturing methods and testing methods thereof - Google Patents
Liquid crystal displays, manufacturing methods and testing methods thereof Download PDFInfo
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- TW396370B TW396370B TW087120268A TW87120268A TW396370B TW 396370 B TW396370 B TW 396370B TW 087120268 A TW087120268 A TW 087120268A TW 87120268 A TW87120268 A TW 87120268A TW 396370 B TW396370 B TW 396370B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3614—Control of polarity reversal in general
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
五、發明說明(1) 發明背景 (a) 發明範_ 法本::有關一種液晶顯系器(以下稱為LCD)、其製造方 τ' ^阑試方法,尤其是具有兩個以下之短路條之 、使用該短路條測試該LCD中之缺陷之方法。 (b) 相關技藝描述 =日日,不器之紐路條係用以將液晶顯示器製造過程中所 、之靜電荷放電並於製造方法完成後測試該液晶顯示 器0 參照附圖詳細描述習用液晶顯示器。 曰圖1係為供具有短路條之液晶顯示器使用之習用薄獏電 曰曰體(以下稱為1'15'1')基板的示意圖,圖2係為圖1中Λ部分之 放大圖而圖3係為沿圖2中之ΠΙ - ΠΓ線所得之剖面圖。 如圖1至3所示,閘極線Gl、G2、G3、G4、、、係位於基 板1上,而延伸於水平方向,而閘極墊1 0係位於各閘極線 之一末端。將閘極線Gl、G2、G3、G4皆電聯之閘極短路條 係位於基板1上’而延伸於垂直方向,相對於閘極墊丨〇,” 位於與該閘極線G1、G2、G3、G4、、 極短路條2 0之兩端形成一對測試墊2。 、相反之位置。於閑 閘極絕緣模1 5覆蓋閘極線路5諸如閘極線G1、G2、G3、 ;4、、、閘極墊1〇及閘極短路條2〇。資料線…、D2、μ、 )4、、、係位於閘極絕緣膜1 5上,而延伸於垂直方向,資 料墊30係位於各資料線之五端。將資料線D1、、D3、、 )4、、、電聯在一起之資料短路條4 〇係位於閘極絕緣犋工$V. Description of the invention (1) Background of the invention (a) The scope of the invention _ Law book: related to a liquid crystal display device (hereinafter referred to as LCD), its manufacturing method τ '^ test method, especially with two or less short circuit The method of using the shorting bar to test defects in the LCD. (b) Relevant technical description = day by day, the nuisance line is used to discharge the electrostatic charge during the manufacturing process of the liquid crystal display and test the liquid crystal display after the manufacturing method is completed. 0 Detailed description of the conventional liquid crystal display with reference to the drawings . Fig. 1 is a schematic diagram of a conventional thin-film electric body (hereinafter referred to as 1'15'1 ') substrate for a liquid crystal display having a shorting bar. Fig. 2 is an enlarged view of a section Λ in Fig. 1 3 is a cross-sectional view taken along line II-IIΓ in FIG. 2. As shown in Figs. 1 to 3, the gate lines G1, G2, G3, G4, ... are located on the substrate 1 and extend in the horizontal direction, and the gate pads 10 are located at one end of each gate line. The gate shorting strips that electrically connect the gate lines G1, G2, G3, and G4 are located on the substrate 1 and extend in a vertical direction. With respect to the gate pads, "" is located at the gate lines G1, G2, and G2. G3, G4, and two short-circuit strips 20 form a pair of test pads 2 at opposite ends. The opposite position. Covers the gate circuit 5 such as the gate lines G1, G2, G3, 4 at the idle gate insulation mold 15; ,,, gate pad 10 and gate shorting bar 20. Data lines…, D2, μ,), 4, are located on the gate insulation film 15 and extend in a vertical direction, and the data pad 30 is located at The five ends of each data line. The data shorting bar 4 that connects the data lines D1, D3 ,,), 4, and is electrically located at the gate insulation.
五、發明說明(2) 上二而延伸於水平方向。於資料短路條4〇之兩端形成一對 測β墊3間極&路條2〇及資料短路條4〇可藉電阻器彼此 聯接。 絕緣膜2?覆盖貝料線路包括資料線Dd 2、d 3、 D4 寅料墊30及貝料短路條40,去除絕緣膜15及25位 於資料墊30及閘極墊10上之某些部分。 像7L區係定義為由兩條相鄰閘極線及兩條相鄰資料線所 :裒繞之區域’而顯示區包括像元於每個像元區中形成 藉來自閘極線之掃描信號連通而將影像信號自資料線傳送 至像元區中之薄膜電晶體。 於此結構中,製造過程中所生成之靜電係經由閘極短路 條20及資料短路條4〇放電或分散。 其間,於製造過程及完成陣列測試之後,沒著L線裁切 基板以去除閘極短路條2 〇及資料短路條4〇。 其-人參照圖1及圖4描述習用陣列測試之機制。 圖4顯示應用於像元區之陣列測試之信號極性。 陣列測試用之電壓係施加於測試墊2及3\因為閘極線 、G2、G3、G4 ' 、、及資料線…、D2、D3係個別連接於 短路條20及40,故像元區之薄膜電晶體同時連通,而如圖 4所不般地施加測試信號於所有R、〇、B像元。因此,於正 常*白土模式中,像元區PX顯示黑暗狀態。 盘A資料線路或閘極線路中斷或薄膜電晶體具有缺陷,則 ς缺陷與關之像元變成明亮狀態,而可^易測試出缺陷元 牛。然而,若有兩條以上之閘極線或資料線(例如圖1中之 五、發明說明(3) 資料線D2及D3)短路(S1),則因於玆 — 加之電壓具有相同之大小及極性,^兩貝料線D2及D3上施 件。 敌難以測試出該短路元 同時,若將短路條分成相等或多於 線或資料線,以解決前述缺點,可伤連接之不同閘極 而,將降低對抗靜電荷之保護能力。a加測試能力。然 發明總結 本發明之目的係提供一種具有短 面板’其擅長於偵測短路缺陷, 條之薄獏電晶體陣列 力。 不降低對抗靜電荷之能 本發明另一目的係提供一種測試 鄰資料線或相鄰閘極線之間的短 决’其簡易地偵測相 ▲本發明另一目的係提供一種測$陷及像元缺陷。 高解析度基板中之某些缺陷。 法’其可有效地偵測 為達到本發明之此等目的,形 線,形成兩測試短路條,其每隔—多條彼此平行之閘極 於短路條外側形成連接所有閘極線條閘極線而個別連接。 供測試使用之閉極線及短路條可要短路條。 1¾合。 ^導電性輕合佈線圖型 可形成多條與閘極線垂直之資料 短路條可個別依序連接於資料線序、’’,三條供測試使用之 料線可藉導電性耦合佈線圖型彼此$人而資料短路條及資 而且,期望藉主要短路條將所有=$二 閘極線及資料線接合。 ;貝料^2路條外側之5. Description of the invention (2) The top two extend in the horizontal direction. A pair of test pads 3 & road strip 20 and data short strip 40 are formed at both ends of the data shorting bar 40, and can be connected to each other by a resistor. The insulating film 2 covers the material line including the data lines Dd 2, d 3, D4, the material pad 30 and the material short-circuit bar 40, and the insulation film 15 and 25 are located on the data pad 30 and the gate pad 10. The 7L area is defined as the area surrounded by two adjacent gate lines and two adjacent data lines: and the display area includes pixels in each pixel area to form a scanning signal from the gate line. Connected to transmit the image signal from the data line to the thin film transistor in the pixel area. In this structure, the static electricity generated during the manufacturing process is discharged or dispersed through the gate short-circuit bar 20 and the data short-circuit bar 40. In the meantime, after the manufacturing process and the completion of the array test, the substrate was cut without the L line to remove the gate shorting strips 20 and the data shorting strips 40. The mechanism of the conventional array test will be described with reference to FIGS. 1 and 4. Figure 4 shows the signal polarity applied to the array test in the pixel area. The voltage used for the array test is applied to the test pads 2 and 3. Because the gate lines, G2, G3, G4 ', and data lines ..., D2, D3 are individually connected to the short bars 20 and 40, so the pixel area The thin film transistors are connected at the same time, and a test signal is applied to all R, 0, and B pixels as shown in FIG. 4. Therefore, in the normal * white clay mode, the pixel area PX shows a dark state. The disc A data line or the gate line is interrupted or the thin film transistor has a defect. Then, the defective and related pixels become bright, and the defective element can be easily tested. However, if there are more than two gate lines or data lines (such as the fifth in Figure 1, the description of the invention (3) data lines D2 and D3) short-circuit (S1), because the voltage added here has the same magnitude and Polarity, ^ two shell material lines D2 and D3 are applied. It is difficult for the enemy to test the short circuit element. At the same time, if the short circuit bar is divided into equal or more wires or data lines to solve the aforementioned disadvantages, different gates of the connection may be damaged, and the protection ability against electrostatic charges will be reduced. a plus test capabilities. Summary of the Invention The object of the present invention is to provide a thin panel with a short panel, which is good at detecting short-circuit defects. Does not reduce the ability to resist static charges. Another object of the present invention is to provide a method for testing short-term determination between adjacent data lines or adjacent gate lines. Pixel defects. Some defects in high-resolution substrates. It can effectively detect that to achieve these purposes of the present invention, the line is formed to form two test short bars, and every other plurality of gates parallel to each other form a gate line connecting all the gate lines outside the short bar And individually connected. The closed-pole wires and short-circuit bars used for testing may be short-circuit bars. 1¾ go. ^ The conductive light-weight wiring pattern can form a plurality of data short-circuit bars that are perpendicular to the gate line, and can be individually connected to the data line sequence in sequence. In addition, it is expected that all the two gate lines and data lines will be joined by the main short-circuit bar. ; Shell material ^ 2 outside the road
第7頁 五、發明說明(4) 於液晶顯不器之製造方法中,於形成透明像元電極之弗 驟中形成導電性编合佈線圊型。 ^ 問極線及資料線可於形成導電性耦合佈線圖 短路條分隔。 说,、王要 根據本發明之液晶翻- 路條或其他資料短:;…製…,形成其他問極短 分隔。是故,⑨晶顯示器:完成此方法後與該主要短路條 將靜電放電。 土板擅於偵測基板之短路缺陷及 於本發明具體實例之 極線及奇數閘極線之兩士 #方法中,於個別連接於偶數閘 於個別連接於連續之R、人要測試線路上施加閘極脈衝,而 路上施加資料信號。詳< G及^像元之一之三條次要測試線 時,具有第一極性之俨二之,當脈衝施加於偶數閘極線上 條,而於該三條相鄰^ 施加於三條相鄰資料線中之兩 一相反之極性的信號。之線中餘下之一條上施加具有與第 三條相鄰資料線中之兩攸後具有第一極性之信號施加於 於該三條相鄰資料線中與第一次選擇不同之組合),而 之極性的信號。 、下之一條上施加具有與第一相反 於本發明測試方法中, 短路缺陷,而增加可見可谓測相鄰像元或相鄰線路間之 圖式簡單說明 缺陷之该測能力及可信度。 圖1係為具有短路條< (TFT)基板的示意圖;、駕用液晶顯示器之薄膜電晶體 圖2係為圖1中之A部八 刀的放大配置圖;Page 7 V. Description of the invention (4) In the method for manufacturing a liquid crystal display, a conductive braided wiring pattern is formed in the step of forming a transparent pixel electrode. ^ Question and data lines can be used to form conductive coupling wiring diagrams. Say, Wang Yao according to the invention of the LCD-road strips or other information is short :; ... system, to form other very short separation. It is for this reason that the crystal display: After completing this method, it will discharge static electricity with the main shorting bar. The soil plate is good at detecting short-circuit defects of the substrate and the two lines of polar lines and odd-numbered gate lines in the specific examples of the present invention, which are individually connected to even-numbered gates and individually connected to continuous R, and the test lines A gate pulse is applied and a data signal is applied on the road. For the three secondary test lines of one of the G and ^ pixels, the second of the two having the first polarity, when the pulse is applied to the even gate line, and the three adjacent ^ is applied to the three adjacent data Signals of two opposite polarities in a line. A signal with the first polarity applied to the remaining one of the three adjacent data lines is applied to a combination of the three adjacent data lines that is different from the first selection), and Polarity signal. The next one has the opposite to the first. In the test method of the present invention, the short-circuit defect is increased, and the visible increase can be described as measuring the pattern between adjacent pixels or adjacent lines. The test capability and credibility of the defect are simply explained. FIG. 1 is a schematic diagram of a substrate having a short-strip < (TFT) substrate; a thin film transistor of a liquid crystal display for driving; FIG. 2 is an enlarged configuration diagram of the eight-blade knife in Part A of FIG. 1;
第8頁 五、發明說明(5) 圖3係為沿圖2中之ΠΙ -皿’線所得之剖面圖; 圖4係為施加陣列測試信號之像元矩陣的示意圖; 圖5係為本發明具有短路條之液晶顯示器之薄膜電晶體 陣列面板的示意圖; 圖6係為本發明第一具體實例而於圖5中B部分之放大配 置圖; 圖7係為本發明第二具體實例而於圖5中B部分之放大配 置圖; 圖8係為沿圖7之M- VT線所得之剖面圖; 圖9係為圖5中C部分之放大配置圖; 圖1 0係為沿圖9中之X - X ’線所得之剖面圖; 圖11A至11F係為根據圖7及8之製造方法的液晶顯示器基 板的剖面圖; 圖1 2 A至1 2 F係為根據圖9及1 0之製造方法之液晶顯示器 基板的剖面圖; 圖1 3係為說明根據本發明連接線路及短路條之方式之示 意圖; 圖1 4說明根據第一具體實例施加於閘極及資料線之陣列 測試信號的波型; 圖1 5 A至1 5 C說明根據第一具體實例施加於R、G、B像元 之信號的極性; 圖1 6說明根據第二具體實例施加於閘極及資料線之陣列 測試信號的波型; 圖1 7 A至1 7 B說明根據第二具體實例施加於R、G、B像元Page 8 V. Description of the invention (5) Figure 3 is a cross-sectional view taken along the II-plate 'line in Figure 2; Figure 4 is a schematic diagram of a pixel matrix to which an array test signal is applied; Figure 5 is the present invention Schematic diagram of a thin-film transistor array panel for a liquid crystal display with a shorting bar; FIG. 6 is an enlarged configuration diagram of the first specific example of the present invention and part B in FIG. 5; FIG. 7 is a diagram of the second specific example of the present invention. Enlarged configuration diagram of part B in Fig. 5; Fig. 8 is a sectional view taken along the line M-VT of Fig. 7; Fig. 9 is an enlarged arrangement diagram of part C in Fig. 5; A cross-sectional view taken along the line X-X '; Figs. 11A to 11F are cross-sectional views of the liquid crystal display substrate according to the manufacturing method of Figs. 7 and 8; Figs. 1 A to 1 2 F are manufactured according to Figs. 9 and 10 A sectional view of a liquid crystal display substrate of the method; FIG. 13 is a schematic diagram illustrating a method of connecting a line and a shorting bar according to the present invention; and FIG. 14 illustrates a wave of an array test signal applied to a gate and a data line according to a first specific example Figures 1 5 A to 1 5 C illustrate application to R, G, B according to a first specific example The polarity of the element signal; Figure 16 illustrates the wave pattern of the array test signal applied to the gate and data lines according to the second specific example; Figures 17 A to 17 B illustrate the application to R, G, and Pixel B
五、發明說明 之信號的極性。 及資料線之陣列 及資料線之陣列 圖1 8說明根據第三具體實例施加於閘極 測試信號的波型。 圖1 9說明根據第四具體實例施加於閘極 測試信號的波型。 較佳具體實例詳诚 現在參照附圖更完全地描述本發明,其中出示本發明較 佳具體實例。然而,本發明可於許多不同形式下具體實 現,而不限於本發明所列示之具體實例·而此等發明之提 供係使本揭示完整,並將本發明之範疇充分傳輸於熟習此 技和者圖中,誇大薄層及區域之厚度以明白顯示。全文 中以相同編號表示相同元件。已知當一薄層、區域或基板 被指稱係位於另一元件”上層"時,其可直^位於該另一元 件上或亦可存有中間元件。 下文參照圖5描述液晶顯示器樂及其製造方法。 。 圖5係為根據本發明具體實例具有短路條之液晶顯示器 所使用之薄膜電晶體陣列面板的示意圖,其中尚未去除” 靜電放電保護及測試缺陷之線路。 、係 由材料諸如Α1所製造之閘極線Gl、G2、G3、G4、 延伸於水平方向,而於各閘極線之一末端上及閘極= U 〇、1 2 0、1 3 〇、! 4 〇、、、。由Cr或M〇製造之閘棰’·.,而延 2 D 3 D 4係位於絕緣膜(未示,覆蓋過渡線)上廣資料 伸於垂直方向,資料墊510、5 2 0、5 3 0、540係位於 線之五末端。5. Polarity of the signal of the invention. Array of data lines and array of data lines Figure 18 illustrates a waveform pattern applied to a gate test signal according to a third specific example. Fig. 19 illustrates a waveform of a test signal applied to a gate according to a fourth specific example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention will now be described more fully with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the present invention may be embodied in many different forms and is not limited to the specific examples listed in the present invention. The invention is provided to complete the present disclosure and to fully transfer the scope of the present invention to those skilled in the art and In the figure, the thicknesses of the thin layers and regions are exaggerated for clear display. The same elements are denoted by the same numbers throughout the text. It is known that when a thin layer, region, or substrate is alleged to be on the "upper layer" of another element, it may be directly on the other element or an intermediate element may also be stored. The LCD monitor is described below with reference to FIG. 5 Its manufacturing method ... FIG. 5 is a schematic diagram of a thin film transistor array panel used in a liquid crystal display having a short-circuit bar according to a specific example of the present invention, in which the circuits of “electrostatic discharge protection and testing defects” have not been removed. The gate lines G1, G2, G3, G4 made of materials such as A1 extend in the horizontal direction, and on one end of each gate line and the gate = U 〇, 1 2 0, 1 3 〇, !! 4 〇 、、、。 The gate · 'made of Cr or M〇, and Yan 2 D 3 D 4 is located on the insulating film (not shown, covering the transition line). The data extends in the vertical direction, and the data pads 510, 5 2 0, 5 3 0 and 540 are located at the fifth end of the line.
第10頁 五、發明說明(7) 所:Ϊ Ϊ 係界定為由兩相鄰間極線及兩相鄰資料線Page 10 V. Description of Invention (7) Where: Ϊ 界定 is defined as two adjacent interpolar lines and two adjacent data lines
7:繞之&域,而顯示區包括像元區。於各像元區中形: :口晶體,而於來自閘極線G1、G J ,膜電晶體時,使來自資料_ ,:之二… 之影像信號傳輪至該像元内。 體通ίΠί線路之步驟中形成之靜電荷可造成薄膜電晶 資料線路之缺陷。為了避免此等缺 需要閘極鈕路條及資料短路條2 0 0及400。 =極線路相同之材料製造之閘極短路條2〇〇延伸* 。,位於顯示區之外侧,而連接於閘極延長線 2、103、1〇4(其自閘極墊 11〇、12〇、13〇、14〇 延 伸於水平方向)。由與資料線路相同之材料製造之資料短 =條40 0係延伸於水平方向’位於顯示區外側而連接於 貢料延長線510、520、530、540 (自資料墊51〇、52〇、 530 440延伸於垂直方向)。閘極短路條2〇〇及資料短路條 4 0 0係經由位於絕緣獏中之接觸孔而彼此連接。 、 ,路條20 0及4 00使製造過程中於基板線路中所生成之靜 電何放電及分散,藉著沿著切裁線L丨裁切基板而自基板取 除。 其次,進行顯示區之陣列測試。 使用輔助線路41 0及4 2 0、2 1 0、2 2 0、及2 3 0進行陣列測 試。 ' 由資料金屬諸如Cr及Mo所製造之第一條及第二條線路 410及420係排列於閘極短路條2〇()及閘極墊11()、12〇、13〇7: the & domain, and the display area includes the pixel area. In each pixel area, the shape of the :: mouth crystal, and when it comes from the gate line G1, G J, and the film transistor, the image signal from the data _ ,: the second ... is transmitted to the pixel. The electrostatic charge formed in the step of passing through the circuit can cause defects in the thin film transistor data circuit. In order to avoid these shortcomings, gate button bars and data short bars 2 0 and 400 are required. = Gate extension bar 200 extension made of the same material as the pole circuit *. , Located outside the display area, and connected to the gate extension lines 2, 103, 104 (they extend from the gate pads 110, 120, 13 and 14 in the horizontal direction). The material short made of the same material as the data line = strip 40 0 extends in the horizontal direction 'is located outside the display area and is connected to the extension lines 510, 520, 530, 540 (from the data pad 51, 52, 530 440 extends in the vertical direction). The gate short-circuit bar 200 and the data short-circuit bar 400 are connected to each other through a contact hole located in the insulation pad. The slabs 200 and 4 00 discharge and disperse static electricity generated in the substrate circuit during the manufacturing process, and are removed from the substrate by cutting the substrate along the cutting line L 丨. Second, perform an array test of the display area. Use auxiliary lines 41 0 and 4 2 0, 2 1 0, 2 2 0, and 2 3 0 for array testing. '' The first and second lines 410 and 420 made of data metals such as Cr and Mo are arranged on the gate shorting bar 20 () and the gate pads 11 (), 120, and 13.
第11頁 五、發明說明(8) 及140之間’而一閘極短路條2〇〇平行。由閘極金屬諸如A1 製造之第三條、第四條及第五條線路21 0、220及230排列 於資料短路條400及資料墊510、520及530之間,與資料短 路條400平行而由閘極金屬諸如A1製造。第一條及第二條 線路41 0及420個別連接於奇數閘極線61及⑵及偶數閘極線 G2及G4。第三條、第四條及第五條輔助線路21 〇、22〇、及 2 30個別連接於第(3n —2)條資料線、第(以—丨)條資料線及 第(3n)條資料線。 疋故’可藉著經由第一條及第二條輔助線路4丨〇及42 〇施 加不同信號於偶數及奇數閘極線並施加r、G及b信號於第 (3n-2)、第(3n-1)及(3n)條資料線,而偵測基板中之某些 缺陷。 現在參照圖6至圖1 〇詳細描述閘極短路條2 〇 〇、第一條及 第一條輔助線路41 0及42 0、資料短路條4〇〇及第三條、第 四條及第五條輔助線路2 1 〇、2 2 〇及2 3 〇之結構。 圖6及7係為根據本發明第一及第二具體實例而於圖5中 之B部分的放大配置圖,,而圖8係為沿圖7中预_观,線所得 之剖面圖,其中顯示閘極短路條與輔助線路間之連接。 閘極延長線1 〇 1、! 〇 2及丨〇 3自位於基板丨上之閘極墊 1 1 0、1 2 0 及 1 3 0 延仲曼付 4c 1 甲至位於基板1上之垂直延伸閘極短路條 曰形成閘極絕緣膜1 5 〇,於閘極絕緣膜1 5 0上 及第二條輔助線路41〇及42°。第-條及第二條 5及42°係位於問極墊1〇°、110及120與問極短 路條2 0 0之間,而與閘極短路條2〇〇平行。於其上層形成鈍Page 11 V. Description of the invention (8) and 140 'and a gate shorting bar 200 is parallel. The third, fourth, and fifth lines 21 0, 220, and 230 made of a gate metal such as A1 are arranged between the data short strip 400 and the data pads 510, 520, and 530, parallel to the data short strip 400. Manufactured from a gate metal such as A1. The first and second lines 41 0 and 420 are connected to the odd-numbered gate lines 61 and ⑵ and the even-numbered gate lines G2 and G4, respectively. The third, fourth and fifth auxiliary lines 21 〇, 22 〇, and 2 30 are respectively connected to the data line (3n-2), the data line (---), and (3n) Data line.疋 故 'can apply different signals to even and odd gate lines and apply r, G and b signals to (3n-2), ( 3n-1) and (3n) data lines to detect certain defects in the substrate. Now referring to FIGS. 6 to 10, the gate short-circuit bar 2000, the first and first auxiliary lines 410 and 42 0, the data short-circuit bar 400, and the third, fourth, and fifth lines will be described in detail. The structure of two auxiliary lines 2 1 0, 2 2 0 and 2 3 0. 6 and 7 are enlarged layout diagrams of part B in FIG. 5 according to the first and second specific examples of the present invention, and FIG. 8 is a cross-sectional view taken along the line of FIG. 7, wherein Shows the connection between the gate short-circuit bar and the auxiliary line. Gate extension line 1 〇 1 ,! 〇2 and 丨 〇3 From the gate pads 1 1 0, 1 2 0, and 1 3 0 on the substrate 丨 Yan Zhongman 4c 1 A to the vertically extending gate shorting bar on the substrate 1 to form the gate insulation The film 150 is on the gate insulating film 150 and the second auxiliary lines 41 ° and 42 °. Clauses-2 and 5 and 42 ° are located between the question pads 10 °, 110 and 120 and the question short circuit strip 200, and parallel to the gate short-circuit strip 200. Blunt
第12頁Page 12
化膜25 0。 路ί:=°Λ,Λ極延長線與第一條或第二條輔助線 路重疊之處形成由與像元電極(未示)相同之材料 連接元件31〇及320。連接元件31〇係經由位於鈍化媒2^〇 之接觸孔(a)連接於第一條輔助線路21〇,而經由位於鈍化 膜250及閘極絕緣膜150中之接觸孔(b)而連接於問極延 線101。連接元件3 20係經由位於鈍化膜250中之接觸孔(c) 連接於第二條輔助線路22〇,而經由貫穿鈍化膜25〇及閘極 絕緣膜150中之接觸孔(d)而連接於閘極延長線1〇2。意即 該閘極延長線101及1〇2由連接元件4 1〇及42〇個別連接"於第 一條及第二條輔助線路2 1〇及22〇上。 、 如前文所述,閘極短路條於陣列測試之前,藉著沿著裁 切線L1裁切基板而與該輔助線路41〇及42〇絕緣,而於陣列 測試之後,藉著沿著位於顯示區外侧之L2線裁切而切除輔 助線路41 0及42 0。 圖7所示之第二具體實例具有一結構,其中陣列測試之 前不需要去除閘極短路條之額外步驟。 於第二具體實例中,第一條及第二條輔助線路41〇及420 與閘極延長線1 〇 1、1 〇 2及1 〇 3之間的連接結構與第一具體 實例中之結構相同,但每個閘極延長線皆與閘極短路條 2 0 0分隔’以去除閘極延長線1 〇 1、! 〇 2及1 〇 3、閘極絕緣膜 1 5 0及鈍化膜2 5 0位於閘極短路條2 0 0及第一條輔助線路4 1 〇 之間的部分。閘極延長線1 〇 1、1 〇 2及1 〇 3係於最終製造步 驟中與閘極短路條2 0 〇分隔,而詳細描述於下文。Chemical film 25 0. Road ί: = ° Λ, where the Λ pole extension line overlaps the first or second auxiliary line, and the connecting elements 31 and 320 are made of the same material as the pixel electrode (not shown). The connecting element 31o is connected to the first auxiliary circuit 21o through a contact hole (a) located in the passivation medium 2 ^ 〇, and connected to the first auxiliary line 21o through a contact hole (b) located in the passivation film 250 and the gate insulating film 150 Ask the polar extension 101. The connecting element 3 20 is connected to the second auxiliary line 22 through a contact hole (c) in the passivation film 250, and is connected to the contact hole (d) through the passivation film 25 and the gate insulating film 150. Gate extension line 102. This means that the gate extension lines 101 and 102 are individually connected by the connecting elements 4 10 and 4200 "on the first and second auxiliary lines 2 10 and 22". As mentioned above, before the array test, the gate short-circuit bar is insulated from the auxiliary lines 41 and 42 by cutting the substrate along the cutting line L1, and after the array test, it is located along the display area by The outer L2 line is cut and the auxiliary lines 41 0 and 42 0 are cut. The second specific example shown in FIG. 7 has a structure in which an additional step of removing the gate shorting bar is not required before the array test. In the second specific example, the connection structure between the first and second auxiliary lines 41o and 420 and the gate extension lines 1101, 102, and 103 is the same as that in the first specific example. , But each gate extension line is separated from the gate short bar 2 0 'to remove the gate extension line 1 01! 〇 2 and 1 〇 3. The gate insulating film 150 and the passivation film 250 are located between the gate short-circuit bar 200 and the first auxiliary line 4 1 〇. The gate extension lines 101, 102, and 103 are separated from the gate short-circuit bar 200 in the final manufacturing step, and are described in detail below.
第13頁 五、發明說明(10) ' 於第二具體實例中,不需要於陣列測試之前裁切基板之 步驟’因為閘極短路條200及輔助線路410及420已彼此分 隔。 刀 或如同第一具體實例般,於測試後,藉著沿著裁切線L2 裁切基板,而同時去除輔助線路41〇及420。 圖9係為圖5中C部分之放大配置圖,而圖丨〇係為沿圖9中 之X - X線所得之剖面圖,特別顯示資料短路條相對於第 三條、第四條及第五條輔助線路之接點。 如圖9及1 0所示,由與閘極線路相同之金屬所製造之第 三條210、第四條2 20及第五條2 3 0輔助線路係位於基板1之 水平方向,而閘極絕緣膜1 5 0係沉積於其上層。資料線路 55(包括資料線路D1、D2、D3及D4)、資料塾510、520、 530及5 40、自資料墊延伸之資料延長線5(n、5〇2、5〇3及 504及連接於資料延長線之資料短路條4〇〇係位於閘極絕緣 膜150上。而於其上層形成鈍化膜25〇。 於鈍化膜2 50中位於各個資料延長線5〇1、5〇2及5〇3上之 部分形成接觸孔F、Η及J,而於鈍化膜2 5 〇及閘極絕緣層 150中位於各個第三條、第四條及第五條輔助線路21〇 : 220及2 30上之部分上形成接觸孔G、。位於該鈍化膜 250上層之連接元件301、302及303經由接觸孔f、h、J、 G、I、K個別將該第三條、第四條及第五條輔助線路2丨〇、 220及230連接於每次相隔一條之第三資料延長線5〇1、5〇2 及5 03。 此外’去除位於資料短路條4 〇 〇及資料塾5 1 〇、5 2 0、5 3 0Page 13 V. Description of the invention (10) In the second specific example, the step of cutting the substrate before the array test is not required 'because the gate shorting bar 200 and the auxiliary lines 410 and 420 are separated from each other. The knife or the first specific example, after the test, cuts the substrate along the cutting line L2, and simultaneously removes the auxiliary lines 41 and 420. Fig. 9 is an enlarged configuration diagram of part C in Fig. 5, and Fig. 〇 is a cross-sectional view taken along the line X-X in Fig. 9, which particularly shows that the short-circuit bar of the data is relative to the third, fourth, and third sections. Contact point for five auxiliary lines. As shown in FIGS. 9 and 10, the third 210, the fourth 220, and the fifth 2 3 0 auxiliary lines made of the same metal as the gate line are located in the horizontal direction of the substrate 1, and the gate The insulating film 150 is deposited on the upper layer. Data line 55 (including data lines D1, D2, D3, and D4), data lines 510, 520, 530, and 5 40, data extension lines 5 (n, 502, 503, and 504) and connections extending from the data pad The data shorting bar 400 on the data extension line is located on the gate insulating film 150. A passivation film 25 is formed on the upper layer. The passivation film 2 50 is located on each of the data extension lines 501, 50, and 5. The contact holes F, Η, and J are formed on the part 〇3, and the third, fourth, and fifth auxiliary lines 21, 220, and 2 30 are located in the passivation film 25 and the gate insulating layer 150. A contact hole G is formed on the upper part. The connection elements 301, 302, and 303 located on the upper layer of the passivation film 250 are individually connected to the third, fourth, and third via the contact holes f, h, J, G, I, and K. Five auxiliary lines 2, 0, 220, and 230 are connected to the third data extension lines 5101, 502, and 503, which are separated by one at a time. In addition, 'remove the data short-circuit bar 4 00 and data 5101'. , 5 2 0, 5 3 0
第14頁Page 14
及540」之間的鈍化膜25 0及資料延長線5〇1、5〇2及5〇3, 即,貝料延長線50 1、50 2及503係自資料短路條4〇〇拆離。 結果,陣列測試不需要裁切資料短路條4 〇 〇之額外步驟。 如前文所述,可於該第三條、第四條及第五條輔助線路 2 1 0、2 2 0及2 3 0上施加三個其他信號,以偵測薄膜電晶體 陣列面板之像元缺陷及短路缺陷,因為該三條輔助線路 210、220及230中每一條皆連接於每次相隔一條之第三 料延長線。 ' 若其中兩條以上之資料線D3及])4如圖5所示般地短路, 若於資料線D2及D3上施加不同信號,則可藉著其與其他像 元之亮度差而輕易偵測短路缺陷。 雖然此具體實例中有三條分隔之輔助線路2丨〇、2 2〇及 2 3 0 ’但可形成兩條或三條以上之輔助線路。 其次,以下參照圖1 1 A至1 1 F及圖1 2A至1 2F描述本發明具 體實例之液晶顯示器的製造方法。 、 圖11A至11F係為圖7及8所示之液晶顯示器面板的中間社 構之剖面圖,而圖1 2A至1 2F係為圖9及1 0所示之液晶顯示 器面板之中間結構的剖面圖。 如圖11 A及1 2 A所示’於絕緣基板1上沉積金屬層,製作 佈線圖型以形成閘極線路包括閘極線G1、G2、G3及G4、閉 極墊1 00、11 0及120、閘極短路條2〇〇、閘極延長線1〇1、 102及103及輔助線路210、220及230。之後,連續沉積開 極絕緣膜1 5 0、非晶石夕膜(未示)及經換雜之石夕膜(未示), 上兩層薄膜製作佈線圖型以形成主動佈線圖型。And 540 "between the passivation film 250 and the data extension lines 501, 502, and 503, that is, the shell material extension lines 501, 502, and 503 are detached from the data short-circuit bar 400. As a result, the array test does not require the additional step of cutting the data short strip 400. As mentioned above, three other signals can be applied to the third, fourth and fifth auxiliary lines 2 10, 2 2 0 and 2 3 0 to detect the pixels of the thin film transistor array panel. Defects and short-circuit defects because each of the three auxiliary lines 210, 220, and 230 is connected to a third material extension line that is separated by one at a time. 'If two or more of the data lines D3 and]) 4 are short-circuited as shown in Figure 5, if different signals are applied to the data lines D2 and D3, they can be easily detected by the difference in brightness between them and other pixels. Measure short circuit defects. Although in this specific example there are three separate auxiliary lines 2o0, 220, and 230 ', two or more auxiliary lines may be formed. Next, a method of manufacturing a liquid crystal display according to a specific example of the present invention will be described below with reference to FIGS. 1A to 1F and FIGS. 12A to 12F. 11A to 11F are sectional views of the intermediate structure of the liquid crystal display panel shown in FIGS. 7 and 8, and FIGS. 12A to 12F are sectional views of the intermediate structure of the liquid crystal display panel shown in FIGS. 9 and 10. Illustration. As shown in FIGS. 11A and 12A, a metal layer is deposited on the insulating substrate 1, and a wiring pattern is formed to form a gate circuit including gate lines G1, G2, G3, and G4, closed electrode pads 100, 110, and 120. Gate shorting strip 200, gate extension lines 101, 102, and 103, and auxiliary lines 210, 220, and 230. After that, an electrode insulating film 150, an amorphous stone film (not shown) and a mixed stone film (not shown) are successively deposited, and a wiring pattern is formed on the upper two layers to form an active wiring pattern.
第15頁 五、發明說明(12) 如圖11B及12B所示,沉積金屬層,製作佈線圖型以形成 資料線路55包括資料線路D1、d2、D3及D4、源極及汲極 (未示)、資料墊50 0、51〇、52〇及53 0、資料短路條400、 資料延長線501、5 02、5 03及504及輔助線路410及420。之 後’使用資料線路5 5作為罩幕以姓刻一部分經推雜之石夕 骐。 如圖UC、1 ID、1 2C及1 2D所示’沉積鈍化膜50。之後, 姓刻鈍化膜5 0及閘極絕緣膜1 5 〇以形成接觸孔e及μ,曝露 閘極墊110及120及資料墊51〇、520及530,及接觸孔A、 B、C、D、F、G、H、I、J及K,以曝露第一條至第五條輔 助線路410、420、210、220、230、閘極及資料延長線 101 、 102 、 501 、 502 、 503 。 其次’沉積氧化銦錫(I T 0 )並蝕刻以形成像元電極。於 敍刻方法中,第一及第二連接元件31〇及32〇、及第三及第 五連接元件301、302及303係同時形成。該第一及第二連 接元件3 10及320個別經由接觸孔a、c、B、D將該第一條及 第二條輔助線路410及420連接於閘極延長線1〇1及i〇2。該 第二第四及第五連接元件301、302及303個別經由接觸孔 G Η I J及Κ將s亥第二條、第四條及第五條輔助線路 5ΙΗ、502及503連接於閘極延長線21〇 ' 220及230。 如圖11 F及1 2 F所示,閘極短路條係自介於第一條輔助線 路410及閘極短路條2〇〇之間的閘極延長線1〇ι、ι〇2及丨〇3 拆離’而資料短路條4 〇 〇係自介於第三條輔助線路2丨〇及資 料短路條4 0 0間之資料延長線5 〇 1…5 〇 2及5 0 3拆離。Page 15 V. Description of the invention (12) As shown in FIGS. 11B and 12B, a metal layer is deposited and a wiring pattern is formed to form a data line 55 including data lines D1, d2, D3 and D4, a source and a drain (not shown) ), Data pads 50 0, 51, 52, and 53, data short bar 400, data extension lines 501, 50 02, 50 03, and 504, and auxiliary lines 410 and 420. After that, use the data line 5 5 as a veil to engrave a part of Shi Xi 骐 with a surname. The passivation film 50 is deposited as shown in Figs. UC, 1 ID, 12C, and 12D. Thereafter, the passivation film 50 and the gate insulating film 150 are etched to form contact holes e and μ, and the gate pads 110 and 120 and the data pads 51, 520, and 530 are exposed, and the contact holes A, B, C, and D, F, G, H, I, J, and K to expose the first to fifth auxiliary lines 410, 420, 210, 220, 230, gates and data extension lines 101, 102, 501, 502, 503 . Next, 'indium tin oxide (I T 0) is deposited and etched to form a pixel electrode. In the engraving method, the first and second connection elements 31 and 32, and the third and fifth connection elements 301, 302, and 303 are formed simultaneously. The first and second connection elements 3 10 and 320 respectively connect the first and second auxiliary lines 410 and 420 to the gate extension lines 101 and 102 via the contact holes a, c, B, and D. . The second, fourth, and fifth connecting elements 301, 302, and 303 respectively connect the second, fourth, and fifth auxiliary lines 5I, 502, and 503 to the gate extension via the contact holes GΗIJ and K. Line 2 10 '220 and 230. As shown in Figures 11 F and 1 2 F, the gate short-circuit bar is from the gate extension lines 100, ι〇2, and 丨 between the first auxiliary line 410 and the gate short-circuit bar 200. 3 Detachment 'and the data short-circuit bar 408 is detached from the data extension line 5 〇1… 5 〇2 and 503 between the third auxiliary line 2 丨 〇 and the data short-circuit bar 400.
詳5之,介於第一條輔助線路以0及閘極短路條2〇〇之間 :閘極延長線101及102及介於第三條輔助線路21〇及資料 且路條40 0間之資料延長線5〇1、5〇2及5〇3係於蝕刻鈍化膜 50之步驟曝露。形成連接元件3〇1、3〇2、3〇3、31〇及32〇 之後,延長線101、102、501、502及503之曝露部分經蝕 刻並移除。閘極短路條2 〇〇及資料短路條4〇〇可於陣列測試 之前藉著沿裁切線裁切而去除。 如前文所述,因為兩相鄰閘極線係連接於兩相異之輔助 線路’而三相鄰資料線係連接於三相異輔助線路,故可輕 易測試液晶顯示器之顯示品質。 Λ 現在’再·^也述介於輔助線路與閘極線之間的連接结 構。 、”。 如圖13所示,多條閘極線Gl、G2、G3、G4、G5及G6與多 條資料線Dl、D2、D3、D4、D5及D6相交以界定多個排列成 矩陣之像元。 因為奇數閘極線Gl、G3及G5與偶數閘極線G2、G4及G6係 個別連接於第一條及第二條輔助線路410及420,故可於奇 數像元列及偶數像元列施加不同信號。 三相鄰資料線(即第(3η-2)條、第(3η-1)條及第(3η)條 資料線)係連接於不同像元而排列成三段,例如R、G、Β像 元行。因為該第三條、第四條及第五條輔助線路係個別連 接,故玎經由輔助線210、220及230施加三個其他信號於 該三條相鄰像元行。 於輔助線路410、420、210、2 20及23 0之末端個別形成For details, it is between the first auxiliary line with 0 and the gate short-circuit bar 200: between the gate extension lines 101 and 102 and between the third auxiliary line 21 and the data and road section 400 The data extension lines 501, 502, and 503 are exposed in the step of etching the passivation film 50. After forming the connecting elements 301, 302, 303, 31, and 32, the exposed portions of the extension wires 101, 102, 501, 502, and 503 are etched and removed. The gate short bar 2000 and the data short bar 400 can be removed by cutting along the cutting line before the array test. As mentioned above, since two adjacent gate lines are connected to two different auxiliary lines' and three adjacent data lines are connected to three different auxiliary lines, the display quality of the liquid crystal display can be easily tested. Λ Now, the structure of the connection between the auxiliary line and the gate line is also described. As shown in FIG. 13, a plurality of gate lines G1, G2, G3, G4, G5, and G6 intersect with a plurality of data lines D1, D2, D3, D4, D5, and D6 to define a plurality of arrays arranged in a matrix. Pixels. Odd gate lines G1, G3, and G5 and even gate lines G2, G4, and G6 are connected to the first and second auxiliary lines 410 and 420 respectively, so they can be used in odd pixel rows and even images. Element columns apply different signals. Three adjacent data lines (ie, (3η-2), (3η-1), and (3η) data lines) are connected to different pixels and arranged in three segments, such as Lines R, G, and B. Because the third, fourth, and fifth auxiliary lines are individually connected, three additional signals are applied to the three adjacent pixels via auxiliary lines 210, 220, and 230. Lines are formed separately at the ends of auxiliary lines 410, 420, 210, 2 20, and 23 0
五、發明說明(14) 測試墊4、5、6、7及8。 之後,參照圖13、14及15A至15C描述第一具體實例之顯 示測試方法。 ^ 圖1 4說明經由各輔助線路施加於閘極及資料線之陣列測 試信號的波型,圖15A至15C說明於模式】至3下施加/ G、B像元之信號的極性。 如圖13及丨4所示,信號電壓G奇數及〇偶數係施加於奇數 列之多條閘極線及偶數列之多條閘極線上。信號電壓化、 DG及08個別經由第一條至第五條輔助線路4丨〇、42 〇、2丨〇、 220及230施加於第(3n-2)條、第(3n-l)條及第(3n)條之多 條資料線。 下文將更詳細地描述信號電壓。 個別包括連通薄膜電晶體之脈衝的信號電壓G奇數及〇 6經由第一條及第二條輔助線路4 1 〇及4 2 〇施加於"奇數閘極· 線及偶數閘極線上。若施加一脈衝之時間至施加後續脈衝 之時間的周期定義為一圖框,則偶數閘極線之信號電壓 G偶數與奇數閘極線之信號電壓G奇數差半個圖框。結果, 偶數列像元中之薄膜電晶體相對於奇數列像元中之薄膜電 晶體的連通具有半個圖框差。 期間,個別施加於r、G、B像元行之資料信號電壓Dr、w 及DB於一圖框中轉換一次’此時於奇數或偶數閘極線上施 加脈衝。詳言之,施加於r、G、B像元行中選擇兩行之信 號電壓同時轉換’而信號極性相反。例如,如圖丨4所示, 於三像元行之兩行上施加具有相同極性之信號,而於施加V. Description of the invention (14) Test pads 4, 5, 6, 7 and 8. Hereinafter, the display test method of the first specific example will be described with reference to Figs. 13, 14, and 15A to 15C. ^ Figure 14 illustrates the wave pattern of the array test signal applied to the gate and data lines via the various auxiliary lines, and Figures 15A to 15C illustrate the polarities of the signals applied to the / G, B pixels in modes] to 3. As shown in Figs. 13 and 4, the odd and even numbers of the signal voltage G are applied to a plurality of gate lines in odd columns and a plurality of gate lines in even columns. Signal voltage, DG and 08 are applied to (3n-2), (3n-1) and (3n-2) and (3n-2) via the first to fifth auxiliary lines 4 丨 〇, 42〇, 2 丨 〇, 220 and 230 respectively. Articles (3n). The signal voltage will be described in more detail below. The signal voltage G odd and pulses including pulses connected to the thin film transistor are individually applied to the " odd gate line and even gate line via the first and second auxiliary lines 4 1 0 and 4 2 0. If the period from the time when one pulse is applied to the time when subsequent pulses are applied is defined as a frame, the signal voltage G of the even gate lines and the signal voltage G of the odd gate lines differ by half a frame. As a result, the connection of the thin film transistors in the even-numbered pixels with respect to the thin film transistors in the odd-numbered pixels has a half frame difference. During this period, the data signal voltages Dr, w, and DB that are individually applied to the pixel rows of r, G, and B are switched once in a frame. At this time, pulses are applied to the odd or even gate lines. In detail, the signal voltages applied to the selected two rows of the r, G, and B pixel rows are simultaneously switched 'and the signal polarities are opposite. For example, as shown in Figure 4, apply a signal with the same polarity to two rows of three pixel rows, and apply
第18頁 五、發明說明(15) 偶數閘極脈衝時轉換。於該三像元行中剩餘之行上施加具 有極性相反性之信號’而於施加奇數閘極脈衝時轉換。 圖1 4顯示三種模式之信號。 首先’於第一模式中(模式1 )’施加於r像元行之測試界 面活性劑DR及施加於G像元行之測試信號%具有相反極性, 而當脈衝施加於偶數閘極線時轉換,而施加於β像元行之 測試信號匕於脈衝施加於奇數閘極線時轉換。當啟動第一 二框時,測試信號Dr、㈣之極性個別為⑴、㈠ 及(-)〇 於第'一模式(模式2)中,絲·Λττ^λρ λ 铗η η β η命认垃 %加於R、G及β像元行之測試信 就DR、DG及DB與於第一模式(磁4t 杆夕:目|丨砷产铋η η 椟式1 )中施加於Β、R及G像元 仃之測。式·|5说DB、DR及DG相同。 而且,於第三模式(槿<5 測試俨轳D 、D '式3 )中,施加於R、G及β像元行之 及J 威1)R dg及DB與於第—槿气r R像元行之測試信號Dg、以卩模式」J式"中施加於G、B及 加於β、β及G像元行之測試R 、、第一模式(模式2)中施 於前述信號施加於各個B、Dr及%相同。 首先,若該脈衝係像元極性。 電晶體連通而測試信號施力奇=傍則列像元之薄膜 薄膜電晶體斷開時,脈衝' 】之像凡。當列像元之 經由偶數列像元之連通策!*加於偶數閘極線,而測試信號 因此,第-至第;;:;膜電晶體施加於偶數列像元。 說明於圖1 5 A至1 5C。策1 t第一圖框(1 F )中之像元極性係 如圖15A所示,圖框(2F)之極性柄反。 像元行令像元 於第—模式(模式1)中, 第19頁 五、發明說明(16) 之一及G像元行中像元之一個別具有)及(_)或(―)及(+ ) 極性’而該極性視行數而轉換。然而,B像元行中之所有 像元皆具有相同極性(-)。若為列向,則奇數列之G及B像 元具有一極性’而奇數列之R像元具有與B及G像元相反之 極性。而偶數列中β及R像元具有一極性,偶數列中G像元 具有與Β及R像元相反之極性。 如圖15Β所示,於第二模式(模式2)中,g像元行中像元 之一及β像元行中像元之一個別具有(+ )及(_)或(_)及(+ ) 極性,而極性依行數而轉換。R像元行中之所有像元皆具 有相同極性(-)。若為列向,則奇數列之β及尺像元具有一 極性,而奇數列中之G像元具有與Β及r像元相反之極性。 偶數列中之R及G像元具有一極性,而偶數列中Β像元具有 與R及G像元相反之極性。 此外,如圖15C所示,於第三模式(模式3)中,R行像元 之一及B行像元之一個別具有(+ )及(_)或(_)及(+ )極性, 而極性依行數轉換。所有(;行像元皆具有相同極性(_)。若 為列向,則奇數列中之R及(;像元具有一極性,而奇數列中 之B像兀具有與R及(^像元相反之極性。偶數列中之g 像 几具有-極性,而偶數列中之只像元具有與G及6像元相反 之極性。 可如用—種模式中之一測試兩相鄰閘極線或兩相鄰資料 線間之短路缺陷。若該短路缺陷係發生於施加相 ==號的兩相鄰像元之"施加於像元之信號 電坚支成為早一值,即為兩電壓之平均值,結果於像元 五、發明說明(π) —---- 上施加相同電壓。因此,因為於相鄰短路像元 之灰色影像,故可偵測短路缺陷。而且,若 4不相同 於相鄰線路之間,則因為於連接於短路線路=缺陷係位 上施加相同信號,故可輕易偵測短路缺陷。 几列或行 然而,難以偵測介於施加相同測試信號之相鄰 短路缺陷,並決定其破切位置。 凡間的 為解決此種問題,若採用該三種模式中之任兩種 測試,則可輕易偵測介於相鄰像元間之像元缺陷諸如—仃 缺陷,而決定缺陷之位置,因為至少一次係於列向,= 相鄰像元上施加不同極性。 # 此外’於第一具體實例之測試方法中,因為施加於 助線路2 1 0、2 2 0及2 3 0之信號DR、DG及DB極性持續一圖框, 而信號波動可忽略,故可偵測顯示均勻性。 現在參照圖16、17A及17B描述第二具體實例之顯_測 方法。 圖1 6說明第二具體實例施加於閘極及資料線之陣列測試 信號的波型,而圖1 7A至1 7B說明第二具體實例施加於只、 G、B像元之信號的極性。 圖1 6所示之信號電壓C奇數及G偶數及DR、RG及h係個別 鎳由第一至第五條輔助線路410、42 0、210、22 0及230施 加於奇數及偶數像元列及第(3n-2)、第(3n-l)及第(3n)條 資料線。 如同第一具體實例,若由施若施加一脈衝之時間至施加 後續脈衝之時間的周期定義為一圖框,則偶數閘極線之信Page 18 V. Description of the invention (15) Switching with even gate pulse. A signal with opposite polarity is applied to the remaining rows of the three-pixel row and switched when an odd-numbered gate pulse is applied. Figure 14 shows the signals of the three modes. First, 'in the first mode (mode 1)', the test surfactant DR applied to the r pixel row and the test signal% applied to the G pixel row have opposite polarities, and are switched when the pulse is applied to the even gate line The test signal applied to the β pixel row is switched when the pulse is applied to the odd gate line. When the first and second frames are activated, the polarities of the test signals Dr, ㈣ are ⑴, ㈠, and (-) respectively. In the first mode (mode 2), the wire · Λττ ^ λρ λ 铗 η η β η is identified % The test letters added to the R, G, and β pixel rows apply DR, DG, and DB in the first mode (magnetic 4t rod evening: head | 丨 bismuth produced by arsenic η η formula 1) applied to B, R, and G pixel element test. Equation || 5 says that DB, DR, and DG are the same. Furthermore, in the third mode (Hibiscus < 5 Test 俨 轳 D, D 'Formula 3), R, G, and β pixels are applied to the sum of JW1) R dg and DB and the first-hibiscus r The test signal Dg of the R pixel row is applied to G and B in the "J mode" and the test R added to the β, β, and G pixel rows is applied to the aforementioned first mode (mode 2). The signals are the same for each of B, Dr, and%. First, if the pulse is of pixel polarity. When the transistor is connected and the test signal is applied, the force is equal to the thin film of the adjacent pixel. When the thin film transistor is disconnected, the pulse “] is like a fan. When the columns of pixels pass through the even-column pixels, they are applied to the even-numbered gate lines, and the test signal is therefore -th to -th; ;;; The film transistor is applied to the even-numbered pixels. This is illustrated in Figures 15 A to 15C. The polarity of the pixels in the first frame (1 F) of the policy 1 t is shown in Figure 15A, and the polarity of the frame (2F) is reversed. Pixels are ordered in the first mode (mode 1), page 19 V. One of the invention description (16) and one of the pixels in the G pixel row has) and (_) or (―) and (+) Polarity 'and the polarity is switched depending on the number of lines. However, all the pixels in the B pixel row have the same polarity (-). In the column direction, the G and B pixels of the odd sequence have a polarity 'and the R pixels of the odd sequence have the opposite polarity to the B and G pixels. In the even-numbered columns, the β and R pixels have a polarity, and in the even-numbered columns, the G pixels have the opposite polarity to the B and R pixels. As shown in FIG. 15B, in the second mode (mode 2), one of the pixels in the g pixel row and one of the pixels in the β pixel row have (+) and (_) or (_) and ( +) Polarity, and the polarity is switched by the number of rows. All pixels in the R pixel row have the same polarity (-). If it is in the column direction, the β and ruler pixels in the odd sequence have a polarity, and the G pixel in the odd sequence has the opposite polarity to the B and r pixels. The R and G pixels in the even columns have a polarity, and the B pixels in the even columns have the opposite polarity to the R and G pixels. In addition, as shown in FIG. 15C, in the third mode (mode 3), one of the R-line pixels and one of the B-line pixels have (+) and (_) or (_) and (+) polarities, respectively. And the polarity is switched by line number. All (; row pixels have the same polarity (_). If it is column-oriented, R and (; pixels in odd columns have a polarity, while B pixels in odd columns have the same polarity as R and (^ pixels) The opposite polarity. The g-number in the even-numbered column has-polarity, and only the pixels in the even-numbered column have the opposite polarity to the G and 6 pixels. You can use one of the modes to test two adjacent gate lines. Or the short-circuit defect between two adjacent data lines. If the short-circuit defect occurs when two adjacent pixels with the phase == are applied, the signal strength of the signal applied to the pixel becomes an earlier value, that is, two voltages. The average value, the result is the same voltage is applied to pixel five, invention description (π) —----. Therefore, because of the gray image of adjacent short-circuit pixels, short-circuit defects can be detected. Moreover, if 4 does not The same as between adjacent lines, because the same signal is applied to the short circuit line = defect system, it can easily detect short circuit defects. Several columns or rows However, it is difficult to detect the adjacent between the same test signal Short circuit defect and determine its cutting position. With any two tests in these three modes, it is easy to detect pixel defects such as-诸如 defects between adjacent pixels, and determine the location of the defect, because at least once in the column direction, = adjacent image Different polarities are applied to the element. # In addition, in the test method of the first specific example, because the polarities of the signals DR, DG, and DB applied to the auxiliary lines 2 1 0, 2 2 0, and 2 3 0 continue a frame, and the signal The fluctuation is negligible, so the uniformity can be detected and displayed. The display method of the second specific example will now be described with reference to Figs. 16, 17A and 17B. Fig. 16 illustrates the array test signal applied to the gate and data lines by the second specific example. Figs. 17A to 17B illustrate the polarities of the signals applied to only pixels G, B, and B in the second specific example. The signal voltages C odd and G even and DR, RG, and h shown in Fig. 16 Individual nickel is applied from the first to the fifth auxiliary lines 410, 42 0, 210, 22 0, and 230 to the odd and even pixel rows and (3n-2), (3n-1), and (3n) Data line. As in the first specific example, if the time from applying a pulse to applying the subsequent pulse is It is defined as a frame period, the source lines of the even gate channel
第21頁 五、發明說明(18) 號電壓G偶數與奇數閘極線之信號 期間,施加於J?、G、β像元并+ & 奇數差半個圖框。 於-圖框中轉換數次,周期與:衝資寬料度I號,Page 21 V. Description of the invention (18) During the signal period of voltage G even-numbered and odd-numbered gate lines, it is applied to J ?, G, and β pixels and the odd-numbered difference is half a frame. Converted several times in the-frame, the cycle and: the redemption degree I,
、DG及DB之極性於閘極脈衝個’ ° 4號電壓DK 閘極線時轉換,而脈衝施加於;奇數閘極線及偶數 施加於偶數閘極線時之極性相反 ? 5線時之椏性與脈衝 ^於r、g、及b像元行中之生之信號施 相反之極性的信號則施加於R、G 二有_與該兩像元行 圈16顯示兩種模式之信號。 70行中其餘一行。 於第四模式(模式4)令,具有相 之測試信號施加於R像元行中之像 f生及相同轉換周期 而具有與測試信號队及〇8相同轉^周象几行中之像元, 信號DG係施加於其餘G像元行 、周期而極性相反之測試 於第五模式(模式5 )中,$ 之像元及G像元行之傍_ '同別试仏號施加於R像元行 加於β像元行之像元。疋而具有相反極性之測試信號施 圖17Α及17Β顯示當根據 元中之極性。 弟五模式施加信號時於像 於圖1 7Α所示之第四模式中, 彼此相反之極性,而 订向相鄰像元皆具有 元外)皆具有相反極性/所有相鄰像元(除相鄰Β及R像 於圖1 7 Β所示之第石捃 具有彼此相反極性,而4/: ’所有行向中之相鄰像元皆 外)皆具有相反極性斤有列向相鄰像元(除相鄰R及G之The polarities of DG, DB and DB are switched when the gate pulse is ’° No. 4 voltage DK gate line, and the pulse is applied to; the polarity of the odd gate line and the even number is opposite when applied to the even gate line? The polarity at the time of 5 lines is opposite to that of the pulses generated in the r, g, and b pixel lines. The signals with opposite polarities are applied to R and G. There are two kinds of _ and the two-element line circle 16 shows two kinds. Signal of mode. The remaining 70 lines. In the fourth mode (mode 4), the image with the same test signal is applied to the R pixel row and the same conversion period, and the same number of pixels in the test signal team and the 0 to 8 cycle as the test cell. The signal DG is applied to the rest of the G pixel rows, and the cycle is reversed. In the fifth mode (mode 5), the pixel of $ and the edge of the G pixel row are applied to the R image. The yuan line is added to the pixels of the beta cell line. In contrast, test signals with opposite polarities are shown in Figures 17A and 17B. In the fifth mode, when the signal is applied, in the fourth mode as shown in FIG. 17A, the polarities are opposite to each other, and the adjacent pixels have the same polarity. All the polarities have the opposite polarity / all adjacent pixels (except the phase). The adjacent B and R images shown in Figure 17B have opposite polarities to each other, and 4 /: 'All adjacent pixels in all row directions are outside) have opposite polarities. (Except for adjacent R and G
兩i:文第 '具體實例所述’可藉著使用第二具體實例中 增古,之測試短路缺陷。若應用兩種模式,則測試能力 相齟後而可輕易《貞測介於施加具有相同極性之測試信號之 像7L間的像元缺陷諸如短路缺陷。Two i: As described in the specific example of the text, the short-circuit defect can be tested by using Zenggu in the second specific example. If two modes are applied, the test capabilities can be easily compared, and it is easy to test for pixel defects such as short-circuit defects between images like 7L where test signals with the same polarity are applied.
夕L二具體實例測試缺陪之m ® 4施加於R、G及B 二^ k號極性的轉換周期與閘極脈衝寬度相同,信號未 刀送入像元内。結果,產生閃爍效應。此外,不適於測 1 *般由肉眼確認之顯示均勻性,而難以測試於高態或斷 開態下之像元缺陷。 圖1 8顯不第三具體實例用以改善此項問題之測試波型。 圖1 8中’施加於r、g及b像元行之信號Dr、%及匕及施加 =奇數及偶數閘極線之信號G奇數及g偶數大多與第二具體 實例中之信號相同。而施加於r、G及b像元行之信號的轉 換周期為閘極脈衝寬度之兩倍。 因此,可毫無困難地將r、G及8信號施加於像元中,使 閘極脈衝及資料信號同步化’而減少閃爍效應。結果,第 三具體實例之測試方法擅於測試高態及斷開態下之均勻性 及缺陷。 圖1 9說明第四具體實例之陣列測試信號的波型,其中脈 衝施加於奇數閘極線及偶數閘極線,而兩脈衝係於半個圖 框差下同步化。測試信號轉換之周期係為閘極脈衝寬度之 兩倍。 於第四具體實例中,閘極脈衝之施加較施加於r、G及B 像元行之信號DR、DG及DB的轉換慢。因此,當薄膜電晶體In the specific example of L2 test, the switching period of m ® 4 applied to R, G, and B ^ k polarities is the same as the gate pulse width, and the signal is not sent into the pixel. As a result, a flicker effect is generated. In addition, it is not suitable to measure the uniformity of the display confirmed by the naked eye, and it is difficult to test the pixel defects in the high state or the broken state. Figure 18 shows the test pattern of the third specific example to improve this problem. In Fig. 18, the signals Dr,%, and D applied to the pixel rows of r, g, and b, and the signals G odd and even applied to the odd and even gate lines are mostly the same as those in the second specific example. The signal switching period applied to the pixel rows of r, G, and b is twice the gate pulse width. Therefore, the r, G, and 8 signals can be applied to the picture element without difficulty, synchronizing the gate pulse and the data signal 'to reduce the flicker effect. As a result, the test method of the third specific example is good at testing the uniformity and defects in the high state and the off state. FIG. 19 illustrates the waveform of the array test signal of the fourth specific example, in which pulses are applied to the odd gate lines and even gate lines, and the two pulses are synchronized under a half frame difference. The test signal conversion cycle is twice the gate pulse width. In the fourth specific example, the gate pulse is applied more slowly than the signals DR, DG, and DB applied to the r, G, and B pixel rows. So when thin film transistors
第23頁 五、發明說明(20) 連通時’該信號可於高原始充電值下充電 間縮短,而可於施加閘極脈衝下使信號充 即使是南解析度基板亦易於測試。 如前文所述’於本發明液晶顯示器中, 路條或資料輔助短路條係個別形成,具有 線,而與閘極短路條及資料短路條分隔, 靜電荷。此外’因為可於閘極及資料輔助 同之測試信號’故對於基板之偵夠能力增 產生缺陷之基板不持續使用於後續步驟,3 廢棄,故可降低製造成本。此外,可於施 啟動資料信號,以使資料信號充人像元中 解析度基板。 於附圖及說明書中,已揭示典型之本發 例,雖採用特定物類’但其僅用於大體描 制,本發明範圍係設定於以下申請專利範 。結果,充電時 分充電。因此, 因為閘極輔助短 兩條以上之分 該基板擅於對抗 短路條上施加不 高。結果,因為 而於測試步驟中 加閘極脈衝之前 ,而輕易測試高 明較佳具體實 述,而不構成限 圍。Page 23 V. Description of the invention (20) When connected, the signal can shorten the charging space at high original charging value, and the signal charging can be easily performed by applying the gate pulse even on the south resolution substrate. As described above, in the liquid crystal display of the present invention, the road bar or the data-assisted short-circuit bar is formed separately and has a line, which is separated from the gate short-circuit bar and the data short-circuit bar, and has an electrostatic charge. In addition, ‘because the test signal can be the same as the gate and data’, the detection capacity of the substrate is increased. The substrate that is defective is not continuously used in subsequent steps. 3 It is discarded, which can reduce manufacturing costs. In addition, the data signal can be activated at Shi to make the data signal fill the resolution substrate in the human pixel. In the drawings and the specification, a typical example of the present invention has been disclosed. Although a specific substance is used, it is only used for general description. The scope of the present invention is set in the following patent application scope. As a result, it is charged at the time of charging. Therefore, because the gate assist is shorter than two points, the substrate is good at resisting the short-circuit bar. As a result, it is easy to test the detailed description of the better and better because it is before the gate pulse is added in the test step, and does not constitute a limit.
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KR1019970066154A KR100490040B1 (en) | 1997-12-05 | 1997-12-05 | Liquid crystal display device with two or more shorting bars and method for manufacturing same |
KR1019980049389A KR100296551B1 (en) | 1998-11-18 | 1998-11-18 | Defective Inspection Method of LCD |
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US8922534B2 (en) | 2011-07-12 | 2014-12-30 | Innolux Corporation | System for display images and fabrication method thereof |
CN107393455A (en) * | 2017-09-20 | 2017-11-24 | 京东方科技集团股份有限公司 | The apparatus for testing chip of display and there is its display |
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JP4202571B2 (en) * | 1999-12-21 | 2008-12-24 | 東芝松下ディスプレイテクノロジー株式会社 | Liquid crystal display device and manufacturing method thereof |
KR100391156B1 (en) * | 2001-09-07 | 2003-07-12 | 엘지.필립스 엘시디 주식회사 | Array pannel of liquid crystal display and fabricating method the same |
KR100391155B1 (en) * | 2001-10-30 | 2003-07-12 | 엘지.필립스 엘시디 주식회사 | array panel for liquid crystal display devices and manufacturing method of the same |
CN100390551C (en) * | 2003-09-27 | 2008-05-28 | 统宝光电股份有限公司 | Detector of two-D display and its operation method |
JP4546723B2 (en) * | 2003-12-10 | 2010-09-15 | シャープ株式会社 | Display device substrate and liquid crystal display device using the same |
CN100346205C (en) * | 2004-06-10 | 2007-10-31 | 友达光电股份有限公司 | Liquid-crystal displaying panel with liquid-crystal box testing structure and producing method thereof |
KR101100883B1 (en) * | 2004-11-08 | 2012-01-02 | 삼성전자주식회사 | Thin film transistor array panel |
JP2007140315A (en) * | 2005-11-22 | 2007-06-07 | Sony Corp | Light emitting device |
CN100388108C (en) * | 2006-04-14 | 2008-05-14 | 友达光电股份有限公司 | LCD subassembly and thin film transistor substrate and testing method |
JP5339273B2 (en) * | 2008-07-11 | 2013-11-13 | 株式会社ジャパンディスプレイ | Display device |
CN115167021B (en) * | 2022-08-05 | 2023-07-25 | 苏州华星光电技术有限公司 | Display panel detection method and detection device |
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1998
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US8922534B2 (en) | 2011-07-12 | 2014-12-30 | Innolux Corporation | System for display images and fabrication method thereof |
TWI471643B (en) * | 2011-07-12 | 2015-02-01 | Innolux Corp | System for display images and fabrication method thereof |
CN107393455A (en) * | 2017-09-20 | 2017-11-24 | 京东方科技集团股份有限公司 | The apparatus for testing chip of display and there is its display |
CN107393455B (en) * | 2017-09-20 | 2020-08-28 | 京东方科技集团股份有限公司 | Chip testing device of display and display with same |
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