TW386048B - Ternary solder for the enhancement of C-4 Fatigue life - Google Patents
Ternary solder for the enhancement of C-4 Fatigue life Download PDFInfo
- Publication number
- TW386048B TW386048B TW086103389A TW86103389A TW386048B TW 386048 B TW386048 B TW 386048B TW 086103389 A TW086103389 A TW 086103389A TW 86103389 A TW86103389 A TW 86103389A TW 386048 B TW386048 B TW 386048B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder
- tin
- silver
- scope
- substrate
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 98
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052709 silver Inorganic materials 0.000 claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 239000002244 precipitate Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000002929 anti-fatigue Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 3
- 229910017692 Ag3Sn Inorganic materials 0.000 claims 3
- 241000237858 Gastropoda Species 0.000 claims 2
- 239000003245 coal Substances 0.000 claims 2
- 239000010341 ping gan Substances 0.000 claims 2
- 150000003378 silver Chemical class 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000010908 decantation Methods 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000005304 joining Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 19
- 229910045601 alloy Inorganic materials 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 230000005012 migration Effects 0.000 description 7
- 238000013508 migration Methods 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002079 cooperative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009661 fatigue test Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 208000036829 Device dislocation Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 235000010599 Verbascum thapsus Nutrition 0.000 description 1
- 244000178289 Verbascum thapsus Species 0.000 description 1
- AKAXWKKNSMKFNL-UHFFFAOYSA-N [Sn].[Au].[Au] Chemical class [Sn].[Au].[Au] AKAXWKKNSMKFNL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 230000001072 progestational effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- -1 roads Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/268—Pb as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
發明説明( 發明背景 1. 發明範圍 2發明有關於具有改進疲勞壽命性質之焊料,尤其有關 於使用焊料以谇咖之丄· 九共百關 於、乘垃It 成份中的c_1連接。焊料也顯示相對 早破垓眭、t 卞(⑻,因而延遲焊料接點之最 干硬壞時足使用時間。 2. 相關專利案 4=接合材料如電子結構成份已廣為業者所知。在 有許多結構都要求連接其他類似結構或接到其他 ::寺、.及’例如包括將積體電路晶片裝金屬基體;將可裝 數個晶片的介面卡裝在電路板上以提供 了簡化本發明的說明及一致性,㈣金 各寺為 丨,兄月曰肘,、針對用控制崩 視印片連接(C-4)技術製造的電子成份作說明。 是由_開發“於替代接線的_種互連技術, ^ 或户個積體電路晶片裝在單一或多層基體 經濟部中央標準局員工消費合作社印製 -- ' . C (請先閲讀背面之注意事項再填寫本頁) 訂 上,而晶片上的墊則電的連接到基體上的墊,方式是用= 數個稱為烊料凸塊的電氣連接。—種區域陣列: 平方栅陣列,其編丨中心上11C_4塾長χπ塾寬;—置二 mil ¥料凸塊位於柵中的每一交又點上,除了一般為了定 的而替代之外。-種常用晶片是電路”晶片上即是— 電恥",其在29 X 29區域陣列中有762個C-4焊料凸塊。 C-4技術也延伸到其他應用而且現在用於混合模組應用 中的薄膜電阻與複合晶片。此應用的焊料墊在直徑上是極 大約25 1^1。在其他應用上,(>4已用於接合(^知波導中的 1 本紙張尺舰财_ 規格(2_Γ〇χ297公整) 五、發明説明(2) ::確連接輿對準。已知最密的區域陣列是在約2mil中心上 m⑶imil凸塊陣列’其可產生画個塾。 C 4技術利用BB片上可濕性的金屬端沉積電的焊料凸 ::上谭料可濕性端的匹配腳印。倒置晶“正 與基m且同時料料凸塊的找流㈣而作 的接點。晶片上的流動受限於球限冶金(b塾, 其大致是蒸發薄膜金屬如路、銅、金的圓形塾,以提ς密 合以及焊料凸塊的可焊料傳導基。一種蒸發焊料的極厚沉 積電可當成晶片與基體之間的主傳導與接合材料。 鎔點是選擇C-4焊料合金的考慮之一,錯焊料特別是% =5 Sn已廣泛用於㈣基體因為其具有約贼的高錐點。 Έ:在晶片連接上的使用充許其他要用於模组至介面卡,或 介面卡至母板封包等級的低鎔點焊料都不必再熔化晶片上 的C-4。。中鎔點焊料如鎔點最低的幻Sfl/37 pb (鎔點⑻。c )和 約220°C的50Pb/50In鎔點都已使用了。在等馬拉和里馬茲編 輯的微電子封包手冊,1989,Van N〇strand Reinh_ p36⑽ 中C 4日曰片土封包互連以及c-4技術中使用的一般焊料都 作了說明,其在此併供參考。 雖然有許多技術可用以形成墊與焊料凸塊,金屬罩蓋 技術疋目削取$使用的,BLM與焊料蒸發通過金屬罩蓋中 的孔而沉積為晶圓表面上的墊陣列。可用Cr_Cu_M說明一 種典型的BLM多層結構及例子。一典型蒸發器可具有許多 個具有熱能的金屬電荷,該熱能由電阻,電感或電子束產 生·先热發Cr以.附著在純化層’’並形成銘的焊料反應障礙 -5- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 五、發明説明(3 ) 阻要营络發Cr與Cu的相層以提供多重重溶流佈的電 接者是純Cu層以形成可鎔冶金。接著提供一塊金作 作=保護層’雖然錯與錫通常在相同的電荷(單溶池), ::先沉積較南蒸發壓力成份pb ’接著形成鉛上的錫。Η 周圍鋼中的㈣流怖在約峨溶化並使墊的性質相同, ::焊料凸塊形成其圓球形。光刻處理與光刻及金屬罩蓋 的合併是日漸廣泛用於製造端子的方法。 ,一旦BLM ’ TSM(要接合的基體的上表面冶金)與焊料在 :位,而使用C-4技術使晶片與基體接合的技術是較直接 自/烊料流不論是高料料用的水白樹脂,其具有低錯的 =鎔性焊料流與其他低特料,—般都置於錢上作為暫 ^付者劑以便將晶片定位。這種組裝接著作重㈣佈熱猶 %,其中晶片上的塾與基體會自對齊,這是因為焊料的言 表面張力’以冤成組裝。—旦完成晶片接合操作,即 這㈣劑如氯化義或二甲苯來清料料流㈣餘物 著對組裝作電氣測試。 较 如上所述新技術持續增加每一裝置的c_4互連數目,與 或晶片大小,2者都會影響焊料互連的應力。當晶片’ M/ 越舍時,咼輸入/輸出計數值會驅動端子的區域陣列 20 mm晶片上155000個墊。這導因於墊數增加而墊大小與2 間減少時,新技術會在焊料接合點上產生大的 ’、空 焊料需要符合這些類型互連的疲乏需求β 〜’而新 要記住這些習用的問題與缺失,因此本發明的目 提供一種具有改進疲勞壽命性質之焊料。 ’疋 6 - 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇χ297公釐) (請先閱讀背面之注意事項再填寫本頁) "裝 訂 經濟部中央標準局員工消費合作社印製 A7 -: 〜-------Β7— 五、發明説明(4~ ~--- '本發明之另-目的是提供一種使用本發明特別定義的 万去以製造焊料互連,尤其是互連。 本發明之又一目的是提供電子結構,尤其是使用本發 明方法而製造的C-4包含結構。 從以下專利說明中可以了解本發明之其他目的與優 點〇 發明之概述 本發明可實現熟於此技術者了解的上述與其他目的,其 入改進之抗疲乏烊料有關,可有效的用於接合電子成份包 含:約1-3 %重量之錫’最好是約丨_2 %的錫,約w %重量 之銀’取好是約1-2 %的銀及大致均衡之錯。較佳地,悍 料包含錫的量約1.25%-1、75%,最好是約1.4%_ 1.6%,如1.5% 而銀的量約1.25%-1.75% ’最好是約1.4%-1.6%如1.5 %。 本發明之另一特徵是提供一種方法以便於電子成份中製 造焊料電氣互連,特別是C-4互連,其包含以下步騾: 施加焊料到電子成份之第一基體之一表面,而焊料包含: 約1-3 %重量之錫’最好是約丨_2 %的錫,約丨_3 %重量之 銀’最好是約1-2 %的銀及大致均衡之鉛; 將要接合之電子成份之第二基體表面帶入第一基體以便與 焊料接觸;及 將接觸基體加熱到一溫度其足以在基體之間形成焊料互 連0 本發明之另一特徵是要接合之電子成份係多層陶基體與 半導體晶片。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) — (請先閱讀背面之注意事項再.填寫本頁) ;裝· 訂
、發明説明(5) 經濟部中央標隼局員工消費合作社印製 本發明<7 份。 又一特徵是也提供由上述方法製造之電子成 附圖之簡單說明 二::申請專利範圍可明了本發明之特徵係新穎的, 並= 性有獨特性。以下附圖僅供說明目的 並配I附厂广、’惟本發明本身藉由參考以下^細說明 πσ附圖,即可完全明了,其中: 和:1 攄疋常態圖形,以顯示破壞循環之間的關係, 和一對數'常態圖形,以顯示破壞循環之間的關係, 、根據C-4叶异出的累加百分破壞率,以比較本發明合金 《17 X 17腳印晶片中的c_4接合點與習用合金。 圖3是-對數-線性圖形,以顯示每—晶片丹累如百分比 p與場循環之間的關係,以比較本發明合金 金。 較佳具體實例之詳細說明 在此參考圖Μ以說明本發明之較佳具體實例,其中相 同數字表示本發明之相同特徵。本發明之特徵不必按照照 圖的尺寸。 ' 本發明之焊料包含:約;1_3%重量之銀,最好是約Μ% 的銀’約1-3%重量之錫,最好是約Q。/。的錫而餘下的均° 為包括一般雜質之鉛。較好是使用純鉛。最好的是使用包 含下列成份的合金··約1.25%-1.75%的銀,約125%_175% 5 -8 - 本紙張尺度適用中國國家標準(CNS ) Μ規格(210Χ 297公釐) (请先閲讀背面之注意事項再填寫本頁) >装- A7
經濟部中央標準局員工消費合作社印製 的Γ餘下的均為錯,其具有極佳的焊科,包含約n1.6。/。 龙击’約1·4%-1·6%的錫’而餘下均為M。—種特定合金, j佳是因為顯示出有效性,其係一種焊料包含:約15% 9踢,約1.5%的銀與其餘含量之鉛。 :明纟金之形成係藉由將組成份熔合混合物以 二成固態焊料。固態時,合金具有相似的結構,包含分饰 :基材的細密分離之A&Sn析出物,其由電子繞射分析決 ^ °析出物一般為片狀,大小是1〇〇 nm厚,25〇哪的直 ^由私子顯微鏡決定。於形成AgsSn相時發現銀已完 全消耗或反應,而Agjn析出物相的物質分佈被認為是較 快發生,以及固化時無未反應的銀留在固態焊料中。剩餘 錫仍保持在鉛的溶液中。 ' 田〇金在融熔虑時,各銀,錫與鉛以其元素形式出現, 本發明 < 合金通常藉由一般使用的蒸發技術從熔化狀態中 施加到要接合的電子成份的墊中。蒸發一般是以合金=填 單一金屬藉由鉬屏蔽完成,惟也可將3種金屬施加在墊表 面上。蒸發後,發現3個金屬變成層狀而在墊面上形成鉛 層,中間錫層與覆蓋的銀層。因成份的相對蒸發壓力而形 成這些層。當焊料在升高的溫度如35〇它重溶流佈 (reflow)時’即形成具有相似結構的三元合金,其包本 細分的Agjn析出物’而焊料則形成半圓球形。會形成— 些金屬間化合物成份,這是因為重熔流佈過程的結果,其 中成份與墊面上的金屬起反應。金屬間化合物成份附著於 金屬表面’但微量的金屬間化合物則溶於焊料基材中。例 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ~-I ''J 裳--- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 : _________ B7·、 五'發明説明(7) * 如右銅與金在墊金屬化狀態f則會形成銅錫與/或金錫金 ,間化合物成份。此外其他金屬成份如鎳也形成鎳锡金屬 奶合物而出現於焊料相。未發現這些金屬間化合物成份在 貝有任何重要景> 響如焊料接合點的疲乏。惟將可了解 =疋因為關係與接合操作,而通常使得原來蒸發的三元合 金成為較複雜的合金,這是由金屬墊上出現的成份而定。 已發現使甩本發明的焊料可提供焊接點如c_4接合以具 有比S用焊料作出的焊料接合更長的疲勞壽命。在容許破 壞等級中疲勞壽命的疲乏改進一般比習用合金大2至3 倍,該習用常甩於製造焊料接合。使用本發明焊料所提供 的另一可觀的利益是低的σ值(破壞次數的標準差)。這表 示第/入破壞不會發生2000循環後,而會發生於6〇〇〇循環 後此改進疋很重要的,因為一次C-4破壞即超過技術容 許範圍的。因此C7極限的緊度(低值)在使電子成份破壞次 數極小化上是一種極為重要的因子。可假設A&Sn析出物 於控制¥料晶粒大小結構的焊料固化過程中角色為孕核位 置,並為運傳權的障礙物,此裂缝傳播在破壞機構屬於速 率控制。Agjn析出物會大量減慢焊料接合中的裂缝傳 播,其也導致緊密的標準差限線。 本發明焊料的另一優點是焊料的其他需求性質都沒有受 到負面影響如腐蚀,金屬遷移,電氣遷移等。伴隨著晶界 的微析出物使得缺陷的傳播更為困難,因而其疲勞破壞以 最小分散含蓋於緊密分佈中^ C_4焊料凸塊中析出物的密 度估計為重量的2 %,這是根據完全反應的銀與錫成分。 -10- 本纸張尺度適用中國國家樣準(CNS ) A4規格(2〗0X297公釐) (請先閱讀背面之注意事項再填寫本頁} '11— I I I I I ! 1^ ^ n ------\J^------- m-— · A7 B7 五、發明説明(8) 本發明的焊料與習用錯_3%錫控制焊科 ;移測試,方法是在各種電壓下將晶片C-4偏壓。在2種Ϊ 、人中,遷移的金屬是錯,這種用水滴作水浸人的測試一般 ^子工業中’用作決定那—金屬會易於或是在最壞的可 ,下有遷移的性質。該結果顯示若任何金屬遷移的發 ^疋導因於極端的水凝情況而產生的缺陷或過程的殘餘 =而它就是鉛遷移。這些結果確認合金成份如銀與锡的 中,遷:多在化:物形式中,或是在具有基材的固態溶液 或疋以^里細微的分離相中,是不被預期或是不可能 .二以電子顯微鏡分析樹枝狀結晶沒顯示任何銀或錫。在 情況巾’金屬遷移測試與電氣偏塵下的t/h(溫度/渴 ^是在以下條件下進行,即饥舰RH(相對濕度)情況 用TCM(熱#導模組)以及施加5伏的電|。三元結果與 制在低百勿t匕中相比稍具優勢’該百分比才是我 論的。 。本發/月焊料的另一優點是提供的焊料接合的長疲勞壽命 ^以精由棱组封裝或是不藉由它而達到,與/或藉由未填 读的树脂或不藉由它而達到。模组的密封與/或使用未填 么勺树知般疋用於延長成份的壽命,而具有改進疲勞壽 I二三元焊料與低口性質的使用,會免除這種技術的需求 俨 电子成伤的筹命。當然若這種技術是使用本發明的 二料而應用’則可以達到更加改進的成份壽命性質。 %例 本發明的焊料是與習用鉛焊料相比,該鉛焊料包含1%的 -11 - 2,0X297^ ) 請 ▲ 閱 讀 背 意 事 項 再 % 本 頁 裝 訂 經濟一郅中夬標芈局員工消費合作·社印製 本紙張尺度適 A7 A7 經濟部中央標準局員工消費合作社印製 B7 五、發明説明(9 ) 鎮,3%的錫與〇_5%的錫,及鉛焊料,其包含〇2%的錫與 2 %的鉍。晶片上測試的焊料具有約6 mm的DNp (至中性點 距離)。 評估的結果圖1所示,其明顯示本發明的合金與習甩合 金相比具有極高數目的循環對破壞比,此外其也顯示本發 明的極限遠小於顯示更有效焊料的其他焊料。 疲乏測試以外的測試如可濕性(WetabUity)測試’腐蝕測 4與金屬的遷移都顯示本發明的焊料與習用焊料相同比, 具有令人滿意的肖業測試結果。±述例子中的類似疲乏測 試也在晶片上作,其具有從60到大於1〇0mil的。用斗點 探針作C-4電阻測量以及3〇姆歐的破壞標準。測量的電阻 僅係C-4,而非接觸電阻或電路部分。當偵測的約4〇%的 所有焊料ΰ塊都已破;1裒(最南的DNp ),則在3〇_循環時中 止測試。每1500循環重覆作電阻測量測試於每一合金的約 100個晶片與約6000 C-4中。結果如圖2所示,其再度明確 顯示本發明焊料的優越性,這是以循環至破壞比的數目以 及低σ極限。 \本發明的焊料與習用3%的錫鉛焊料於疲乏上作比較, 每一合金的33個晶片於儲存晶片在氮中1〇〇〇小時後接合到 各基體,基體從0到则。C,每天48循環,作3〇〇〇〇循環的 循%。在每簡循環間距中作4點電阻測量,結果如圖3所 不,其中二兀焊料比鉛_ 3 %錫合金具有2倍以上的疲勞壽 命。極限也約只有二元控制的一半。在WC/8i%rh下作 5000小時的腐蚀測試’其顯示三元至少與錯_3%錫悍料的 -12- (請先閱讀背面之注意事項再填寫本頁) •I 1¾衣------ΐτ------λ----'__i I I «« 本纸浪尺度it财關家轉(格( 替 五、發明説明(10) 抗腐蝕力相同。 =已用特定較佳具體實例說明本 於此技♦者可以從上述說明中作 ,很明顧的,熟 因此後附令請專利範圍之目的在包正及變化。 與精神之任柯的這種替代、修正及^:本發明之真範固
(請先閲讀背面之注意事項再填寫本頁} 經濟部中夬標準局員工消費合作社印製 13- 本紙張尺度適用中國國家標準(CNS ) A4規格(210x297公釐)
Claims (1)
- 申請專利範圍 經濟部中央標隼局員工消費合作社印製 1. 一種改進之抗疲乏烊料,可古 f行τ有效接合電子成份,該燁料 包含·· 1-3 %重量之錫,丨_3 %舌 、 1·5/〇重量 <銀,而餘下量均為 鉛其中該焊料包含分怖於整個缚科之Α以s η。 2. 如申請專利範圍第!項之焊料,其中該錫係」_2 %而該銀 係 1-2 % 。 3. 如申請專利範園第2項之煤料 。又坪杆,其中錫係1.25-1.75%而銀 係 1.25-1.75%。 4. 如申請專利範圍第3項乏,度 矛貝之烊枓,其令錫係1·4%-1·6%而銀 係 1.4%-1.6 % 〇 5. 一種於第一基體上之墊與對應第二基體上之墊間製造電 子成份之焊料凸塊.電氣互連之方法,包含以下步驟: 施加焊料到電子成份之第—錢之―表面,而焊料 包含,· 1""3%重量之錄,IQ。/壬θ、 ^ 1-3 /β重I炙銀,而餘下量均為 鉛; 將要接合之第二基體墊與對應的第一基體之墊及凸 、塊對齊;·及 將,觸對齊之第一與第二基體加熱到—溫度其足以 在孩第一與第二基體墊之間形成焊料互連,其中該焊 料包含分佈於整個焊料之Ag3Sn。 6. 如申4專利範圍第5項之方法,其中該第—基體係半導 體晶片,而第二基體係多層陶瓷。 7. 如申清專利範圍第6項之方法,其中該锡係邮而該銀 係 1-2 %。 -14 - 本紙張尺度_巾_家標?297公羡) ϊ HI In I - i v—ii I— I - -\ (#先聞讀背面之注意事項再填寫本頁) ----、耵------J.--------------申請專利範圍 經濟部中央標隼局員工消費合作社印製 1. 一種改進之抗疲乏烊料,可古 f行τ有效接合電子成份,該燁料 包含·· 1-3 %重量之錫,丨_3 %舌 、 1·5/〇重量 <銀,而餘下量均為 鉛其中該焊料包含分怖於整個缚科之Α以s η。 2. 如申請專利範圍第!項之焊料,其中該錫係」_2 %而該銀 係 1-2 % 。 3. 如申請專利範園第2項之煤料 。又坪杆,其中錫係1.25-1.75%而銀 係 1.25-1.75%。 4. 如申請專利範圍第3項乏,度 矛貝之烊枓,其令錫係1·4%-1·6%而銀 係 1.4%-1.6 % 〇 5. 一種於第一基體上之墊與對應第二基體上之墊間製造電 子成份之焊料凸塊.電氣互連之方法,包含以下步驟: 施加焊料到電子成份之第—錢之―表面,而焊料 包含,· 1""3%重量之錄,IQ。/壬θ、 ^ 1-3 /β重I炙銀,而餘下量均為 鉛; 將要接合之第二基體墊與對應的第一基體之墊及凸 、塊對齊;·及 將,觸對齊之第一與第二基體加熱到—溫度其足以 在孩第一與第二基體墊之間形成焊料互連,其中該焊 料包含分佈於整個焊料之Ag3Sn。 6. 如申4專利範圍第5項之方法,其中該第—基體係半導 體晶片,而第二基體係多層陶瓷。 7. 如申清專利範圍第6項之方法,其中該锡係邮而該銀 係 1-2 %。 -14 - 本紙張尺度_巾_家標?297公羡) ϊ HI In I - i v—ii I— I - -\ (#先聞讀背面之注意事項再填寫本頁) ----、耵------J.-------------- 386048 一—--'申請專利範圍 A8 B8 ' CS 〇8 ~·' *— 經濟部中央揉隼局員工消費合作社印製 &如申請專利範圍第7項之方法,其切料包含i25_i75% 之錫與1.25-1.75 %之銀。 — 9·如申請專利範圍第7項之方法,其中焊料包含购 之錫與1.4-1.6%之銀。 10.-種用於接合電子元件之增強疲勞抵抗性烊料,包括 重量百分比i-3%之錫,b3%之銀,而餘下量均為 錯,其中該焊料是由像化各組成份並形成—燦融混合 物後冷卻該混合物所形成,形成之該焊料具有均質的 結構,其包含分佈,於烊料結構中之細微分離之_sn 析出物。 如申請專利範園第10項之焊料,其中該⑽析出物呈 片狀。 如申請專利範圍第㈣之烊料,纟中該料中的銀係 完全反應成Ag3Sn析出物。 A如申請專利範圍第10項之焊料,纟中該銀、錫與鉛係 一起熔化,而該焊料係以蒸發法藉由一屏蔽施加於一 基體上,以在該基體上形成積層,該積層包括一鉛 層、一中間錫層及一覆蓋銀層,當該焊料Hi下重 熔流佈時,這些層就形成一具含有細微分離 析出物的均質結構三元合金。 ” ;.-vr裝-- (請先閱讀背面之注意事碩再填寫本頁) 訂 -15-
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/687,272 US5831336A (en) | 1996-07-25 | 1996-07-25 | Ternary solder for the enhancement of C-4 fatigue life |
Publications (1)
Publication Number | Publication Date |
---|---|
TW386048B true TW386048B (en) | 2000-04-01 |
Family
ID=24759765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086103389A TW386048B (en) | 1996-07-25 | 1997-03-18 | Ternary solder for the enhancement of C-4 Fatigue life |
Country Status (4)
Country | Link |
---|---|
US (2) | US5831336A (zh) |
JP (1) | JPH1080788A (zh) |
KR (1) | KR100255916B1 (zh) |
TW (1) | TW386048B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6342442B1 (en) * | 1998-11-20 | 2002-01-29 | Agere Systems Guardian Corp. | Kinetically controlled solder bonding |
FR2786656B1 (fr) * | 1998-11-27 | 2001-01-26 | Alstom Technology | Composant electronique de puissance comportant des moyens de refroidissement |
JP2003518743A (ja) * | 1999-12-21 | 2003-06-10 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 信頼性のあるフリップチップ接続のためのはんだによる有機パッケージ |
US6229207B1 (en) | 2000-01-13 | 2001-05-08 | Advanced Micro Devices, Inc. | Organic pin grid array flip chip carrier package |
US6974330B2 (en) | 2002-08-08 | 2005-12-13 | Micron Technology, Inc. | Electronic devices incorporating electrical interconnections with improved reliability and methods of fabricating same |
US7294220B2 (en) * | 2003-10-16 | 2007-11-13 | Toyota Motor Sales, U.S.A., Inc. | Methods of stabilizing and/or sealing core material and stabilized and/or sealed core material |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060844A (en) * | 1990-07-18 | 1991-10-29 | International Business Machines Corporation | Interconnection structure and test method |
CA2072377A1 (en) * | 1991-07-12 | 1993-01-13 | Masanori Nishiguchi | Semiconductor chip module and method of manufacturing the same |
US5520752A (en) * | 1994-06-20 | 1996-05-28 | The United States Of America As Represented By The Secretary Of The Army | Composite solders |
-
1996
- 1996-07-25 US US08/687,272 patent/US5831336A/en not_active Expired - Fee Related
-
1997
- 1997-03-18 TW TW086103389A patent/TW386048B/zh not_active IP Right Cessation
- 1997-03-26 US US08/825,036 patent/US5950907A/en not_active Expired - Fee Related
- 1997-05-29 KR KR1019970021583A patent/KR100255916B1/ko not_active IP Right Cessation
- 1997-07-18 JP JP9194173A patent/JPH1080788A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100255916B1 (ko) | 2000-05-01 |
US5950907A (en) | 1999-09-14 |
KR980013565A (ko) | 1998-04-30 |
JPH1080788A (ja) | 1998-03-31 |
US5831336A (en) | 1998-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW411744B (en) | Pb-In-Sn tall C-4 for fatigue enhancement | |
US6249051B1 (en) | Composite bump flip chip bonding | |
JP3489811B2 (ja) | 半導体デバイスの製造方法 | |
JP3329276B2 (ja) | 導電性接着剤による相互接続構造物 | |
TWI238502B (en) | Structure and method for lead free solder electronic package interconnections | |
JP3262497B2 (ja) | チップ実装回路カード構造 | |
US6250541B1 (en) | Method of forming interconnections on electronic modules | |
JP3454509B2 (ja) | 導電性材料の使用方法 | |
TWI230103B (en) | Semiconductor module and circuit substrate connecting to semiconductor device | |
US6811892B2 (en) | Lead-based solder alloys containing copper | |
CN102470472B (zh) | 无铅高温化合物 | |
JPH071179A (ja) | 無鉛すず−ビスマスはんだ合金 | |
JPH10509278A (ja) | フリップ・チップ技術のコアメタルのハンダ・ノブ | |
KR20010070397A (ko) | 반도체 장치 | |
JPH04273453A (ja) | 直接チップ取り付け方法 | |
CN100565715C (zh) | 导电球、电子部件电极的形成方法和电子部件以及电子设备 | |
TW386048B (en) | Ternary solder for the enhancement of C-4 Fatigue life | |
US6600233B2 (en) | Integrated circuit package with surface mounted pins on an organic substrate | |
CN101425489A (zh) | 微电子封装中焊料凸点连接金属化层及应用 | |
EP0440615A1 (en) | Uses of uniaxially electrically conductive articles | |
US8071472B2 (en) | Semiconductor device with solder balls having high reliability | |
US7223633B2 (en) | Method for solder crack deflection | |
JPH10294337A (ja) | 半導体装置及びその製造方法 | |
JP2012024834A (ja) | はんだ材料とその作製方法、及びこれを用いた半導体装置の製造方法 | |
JP3464826B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |