TW379514B - Light emitting articles with light reflecting structures - Google Patents
Light emitting articles with light reflecting structures Download PDFInfo
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- TW379514B TW379514B TW86119633A TW86119633A TW379514B TW 379514 B TW379514 B TW 379514B TW 86119633 A TW86119633 A TW 86119633A TW 86119633 A TW86119633 A TW 86119633A TW 379514 B TW379514 B TW 379514B
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- 125000000217 alkyl group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical compound [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
Description
Μ B? 五 經濟部中央標牟局員工消費合作社印¾ 、發明説明(1) 复範圍 本發明係關於有機發光裝置(OLED's),尤其係關於經設 °十成使效率最大化及使因導波所致之損耗最小化之發光物 品a Ιϋ背景 電子顯示被應用於諸如電视機、電腦終端機、電信設備 、及S午多其他應用之裝置中。在目前可資利用之類型的電 子顯示中,平面顯示技術相當重要,且在此領域中有持續 的發展。任何顯示技術的期望因素包括能提供高解析度、 在良好光度下的全色顯示、及具競爭力的價格。 利用當受電流激發時會發光之薄膜材料的有機發光裝置 (OLED's)成爲愈來愈受歡迎的平面顯示技術形式。目前最 受歡迎的有機發光結構係圖1A所示之稱爲雙重不均質結 構(DH ; double heterostructure)OL£D 者。在此裝置中,將 玻璃之基材層10塗布上—薄層的銦_錫-氧化物(IT〇)u 。 接著’將薄的(100-500埃)有機電洞輸送層(HTL) 12沉積於 IT0層11上》沉積於HTL 12之表面上者爲薄的(典型上爲 50埃-500埃)發光層(el)13。EL13提供自100-500埃厚之 電子輸送層14(ETL)注入之電子與來自HTL 12之電洞之再 結合位置。先前技藝ETL、EL及HTL材料之例子發表於美 國專利第5,294,870號’將其揭示内容併入本文爲參考資料。 通常將EL 13摻雜高度螢光的染料,以調整顏色並提高Μ B? Printed by the Consumers' Cooperative of the Central Bureau of Standards and Mobilization of the Ministry of Economic Affairs of the People's Republic of China. 发明 Description of the invention (1) Complex scope The present invention relates to organic light-emitting devices (OLED's), and in particular, it is designed to maximize the efficiency and cause Light-emitting items with minimal loss due to wave a II background electronic displays are used in devices such as televisions, computer terminals, telecommunications equipment, and many other applications. Among the types of electronic displays currently available, flat-panel display technology is quite important and has continued to develop in this area. Expectations for any display technology include the ability to provide high resolution, full color display in good light, and competitive prices. Organic light-emitting devices (OLED's) using thin-film materials that emit light when excited by an electric current have become an increasingly popular form of flat display technology. At present, the most popular organic light-emitting structure is shown in FIG. 1A, which is called a double heterostructure (DH; OL £ D). In this device, a substrate layer 10 of glass is coated with a thin layer of indium-tin-oxide (IT0) u. Then "deposit a thin (100-500 Angstrom) organic hole transport layer (HTL) 12 on the IT0 layer 11" The one deposited on the surface of HTL 12 is a thin (typically 50 Angstroms-500 Angstroms) light-emitting layer (El) 13. EL13 provides a recombination position of electrons injected from the electron transport layer 14 (ETL) with a thickness of 100-500 Angstroms and holes from HTL 12. Examples of prior art ETL, EL and HTL materials are published in U.S. Patent No. 5,294,870 ', the disclosure of which is incorporated herein by reference. EL 13 is usually doped with highly fluorescent dyes to adjust color and improve
I OLED之電激發光效率。如圖1 a所示之裝置經由沉積金屬 觸點15、16及頂端電極17而完成。觸點15及16典型 ------;---71 裝-------訂------線---i (讀先>1讀背-&之注意事項再填巧本頁)I OLED electrical excitation light efficiency. The device shown in Fig. 1a is completed by depositing metal contacts 15, 16 and a top electrode 17. Contacts 15 and 16 are typically ------; --- 71 installed ------- ordered --- --- i (read first > 1 read back- & note (Fill in this page again)
經濟部中央標準局負工消費合作社印¾ A7 B7 五、發明説明(2 ) 係由銦或Ti/Pt/Au製成。電極17通常係由直接接觸有機 ETL 14之合金諸如Mg/Ag 17’,與在Mg/Ag上之厚的高工 作函數金屬層17”諸如金(Au)或銀(Ag)所组成之雙層結構 。厚的金屬1 7"係不透明。當在頂端電極17與觸點1 5及16 之間施加適當的偏壓時,將自發光層Π透過玻璃基材1〇 發光。圖1A之LED裝置根據發光之顏色及裝置結構,典 型上具有0.05%至2%之發光外部量子效率。 另一種已知的有機發光結構係如圖1B所示之稱爲單— 不均質結構(SH ; single heterostructure)〇LED 者。此辞構 與DH結構間之差異在於多功能層13,同時作爲el及etl 。圖1B之裝置的一項限制爲多功能層必須具有氣好的 電子輸送能力。否則,應如圖1A之裝置所示之包含個別的 EL及ETL層。 再另一種已知的LED裝置示於圖1C,其説明單層(聚合 物)OLED之典型橫剖面圖。如圖所示,此裝置包括塗布薄 的ITO層j之玻璃基材1。一旋轉塗布聚合物之薄的有機 層5,比方説,形成於IT0層3上,且其提供先前説明裝 置之HTL、ETL、及EL層之所有功用。在有機層5上形 成金屬電極層6。此金屬典型上爲Mg ' Ca、或其他慣常 使用之低工作函數的金屬。 使用有機化合物作爲發光像元之多色電激發光影像顯示 裝置之-例子發表於美國專利第5,294,87G I此篇專利發 表包含有機介質以發出藍光的多個發光像元。將螢光介質 在某個部分的像元中設置於藍色〇LED與基材之間。螢2 -5 : Ϊ···-裳 i! f請先閱讀背面之注意事項再填寫本頁jPrinted by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives ¾ A7 B7 V. Invention Description (2) It is made of indium or Ti / Pt / Au. The electrode 17 is usually a double layer composed of an alloy such as Mg / Ag 17 'in direct contact with the organic ETL 14 and a thick high work function metal layer 17 "such as gold (Au) or silver (Ag) on Mg / Ag. Structure. The thick metal 17 is opaque. When an appropriate bias is applied between the top electrode 17 and the contacts 15 and 16, the self-emitting layer Π emits light through the glass substrate 10. The LED device of FIG. 1A Depending on the color of the light and the device structure, it typically has a light emitting external quantum efficiency of 0.05% to 2%. Another known organic light emitting structure is called a single-heterostructure (SH; single heterostructure) as shown in Figure 1B. 〇LED. The difference between this lexical structure and the DH structure lies in the multifunctional layer 13, which is also used as el and etl. One limitation of the device of Figure 1B is that the multifunctional layer must have a good electron transport capability. Otherwise, it should be as The device shown in Figure 1A contains individual EL and ETL layers. Another known LED device is shown in Figure 1C, which illustrates a typical cross-sectional view of a single-layer (polymer) OLED. As shown, this device Glass substrate 1 comprising a thin ITO layer j. A spin coating The thin organic layer 5 of the polymer is, for example, formed on the IT0 layer 3, and it provides all the functions of the HTL, ETL, and EL layers of the device described previously. A metal electrode layer 6 is formed on the organic layer 5. This metal It is typically Mg 'Ca, or other metals with a low work function that are commonly used. Examples of multicolor electro-excitation light image display devices using organic compounds as light-emitting pixels-Examples are published in US Patent No. 5,294,87G I A plurality of light-emitting pixels containing an organic medium to emit blue light. A fluorescent medium is set between a blue LED and a substrate in a certain part of the pixels. Fluorescent 2-5: Ϊ ···-裳 i! fPlease read the notes on the back before filling in this page j
-、1T 線 木紙張尺度適用中國國家標準(CNS ) (210X 297公釐) 五、發明説明(3 ) Α7 Β7 經濟部中央標準局員工消费合作社印製 介貝吸收由藍巴OLED發出之光,並在相同像元的不同區 域發出紅色及綠色光。此種顯示之一項缺點爲光通過玻璃 基材自一像元至相鄰像元之導波會造成模糊、色洩(c〇1〇] bleeding)、缺乏影像解析度及損失導波光。對圖ία所示之 裝置將此問題概略示於圖1D ,且其進一步説明於D z Garbuzov等人,"光子激發光效率及三氫醌鋁(Alq3)薄膜之 吸收(Photoluminescence Efficiency and Absorption Aluminum Tri-Quinolate(Alq3)Thin Films”,249 化學物理 (ChemicalJPh^sics Letters)433Π 996),將其併入本文爲 參考貝料。此裝置之另—問題在於使用作爲透明傳導層之 ITO係高損耗材料,因此會造成IT〇層之吸收導波光。在 此裝置及其他先前技藝裝置所遭遇到之另—問題ILED的 相互連結線路可被觀看者看到爲環繞在個別像元的黑色線 條因此而增加顯示的顆粒度(granularity)並限制解析度。 發明之概述 本發明包括利用光反射結構以提高效率並降低由其他有 效發光之導波所致之損耗之單色及多色發光物品。本發明 ^各具體實例包括基材、設置於基材内或基材上之光反射 …構、及,又置於光反射結構内或光反射結構上之〇Led。 此光反射結構^特徵在於頂端部分及底部部分,其中頂端 邵分較底部部分有,以致自〇LED發出之光係經引導向底 部部分。 _ 在。個恐樣中,本發明之發光物品包括多個像元,其各 具有王角壁尚台(angle_WaUed mesa)形式之至少一個光 本纸張尺度 ------^---ΓΊ 裝"I (請先聞讀背面之注意事;1、耳填芍衣頁)-, 1T wire wood paper size applies Chinese National Standards (CNS) (210X 297 mm) 5. Invention Description (3) Α7 Β7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, the consumer co-operative society absorbs the light emitted by Ramba OLED, And emit red and green light in different areas of the same pixel. One disadvantage of this type of display is that the guided waves of light from one pixel to adjacent pixels through the glass substrate can cause blurring, color bleeding, lack of image resolution, and loss of guided light. This problem is schematically shown in FIG. 1D for the device shown in FIG. Α, and it is further explained in D z Garbuzov et al., “Photoluminescence Efficiency and Absorption Aluminum (Photoluminescence Efficiency and Absorption Aluminum) Tri-Quinolate (Alq3) Thin Films ", 249 Chemical JPh ^ sics Letters 433Π 996), which is incorporated herein as a reference material. Another aspect of this device is the high loss of the ITO system used as a transparent conductive layer Materials, which will cause the IT0 layer to absorb the guided light. Another problem encountered in this device and other prior art devices is the problem. The interconnecting lines of the ILED can be seen by the viewer as black lines that surround individual pixels. Increase the granularity of display and limit the resolution. SUMMARY OF THE INVENTION The present invention includes monochromatic and multi-color light-emitting items that utilize light reflecting structures to improve efficiency and reduce losses caused by other effective light-emitting guided waves. The present invention ^ Each specific example includes a substrate, a light reflection disposed in or on the substrate, and a light reflection structure and a light reflection structure. 〇Led on the structure. This light reflecting structure is characterized by the top part and the bottom part, where the top part is more than the bottom part, so that the light emitted from the 0LED is guided to the bottom part. _ In the fear sample, The luminous article of the present invention includes a plurality of picture elements, each of which has at least one light paper size in the form of an angled-was mesa (angle_WaUed mesa) -------- ^ --- ΓΊ 装 " I (please first (Read the notes on the back; 1, ear-filled clothing page)
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• -I nI A7 A7 B7 五、發明説明(4 I-----„---Γ1 裝..II (請先閲讀背面之注意事項再填穷本頁) 射結構。使用於本發明中之高台係呈截頂角錐形式,立各 :有較其底部部分有的頂端部分,以致光經由反射開:側 土,而在自其頂端邵分至其底部部分之方向上引導。 在另一態樣中,本發明之發光物品係構造成可集中發光 。此等物件各包括透明基材、在基材上之光反射層、在光 反射層上呈導波層形式之光反射結構、及在導波層上之至 > 一個OLED 。光反射層中具有至少一個開口。自〇led 發出之光反射開導波層側壁及光反射層,以致其經引導通 過光反射層中之開口而通過基材發光。 在第一個具體實例中,本發明之發光物品包括多個像元 ’其各包括設置於透明基材上之三個高台中的發光裝置, 其中遠南台之第一個提供作爲藍光發射器,該三個高台之 第二個提供作爲綠光發射器,及該三個高台之第三個提供 作爲紅光發射器。在此具體實例中,各高台之底部部分與 基材緊鄰,以致由各高台發出之光經引導向基材。 經濟部中央橾準局負工消費合作社印製 在第二個具體實例中,本發明之發光物品包括多個像元 ,其各包括設置於三個反轉角壁高台中的發光裝置,其中 該三個反轉高台之第一個提供作爲藍光發射器,該三個反 轉咼台之第二個提供作爲綠光發射器,及該三個反轉高台 之第二個提供作爲紅光發射器。在此具體實例中,由於各 南台之頂端郅分與基材緊鄰,以致由各高台發出之光經引 導離開基材,因而將高台稱爲”反轉"。此反轉高台係設置• -I nI A7 A7 B7 V. Description of the invention (4 I ----- „--- Γ1 Packing .. II (Please read the precautions on the back before filling in this page) Shooting structure. Used in the present invention The high platform is in the form of a truncated pyramid, and each has a top part that is more than the bottom part, so that the light passes through the reflection: side soil, and is guided in the direction from its top to its bottom part. In one aspect, the light-emitting article of the present invention is configured to concentrate light. Each of these objects includes a transparent substrate, a light reflection layer on the substrate, a light reflection structure in the form of a wave-guiding layer on the light reflection layer, and Up to > an OLED on the wave-guiding layer. The light-reflecting layer has at least one opening. Light emitted from Oled reflects off the side wall of the wave-guiding layer and the light-reflecting layer so that it is guided through the opening in the light-reflecting layer and passes The substrate emits light. In a first specific example, the light-emitting article of the present invention includes a plurality of picture elements', each of which includes a light-emitting device in three elevated platforms disposed on a transparent substrate. Blue light transmitter, the second one of the three high platforms As a green light emitter, and the third of the three platforms is provided as a red light emitter. In this specific example, the bottom portion of each platform is next to the substrate so that the light emitted by each platform is directed toward the substrate Printed in the second specific example by the Ministry of Economic Affairs, Central Bureau of Standards and Consumer Affairs Cooperative. In the second specific example, the light-emitting article of the present invention includes a plurality of picture elements, each of which includes a light-emitting device provided in three inverted corner wall platforms, where The first of the three inverted platforms is provided as a blue light transmitter, the second of the three inverted platforms is provided as a green light transmitter, and the second of the three inverted platforms is provided as a red light transmitter. In this specific example, the top of each south platform is in close proximity to the substrate, so that the light emitted by each high platform is guided away from the substrate, so the high platform is referred to as "reverse". This reverse high platform is set
I 於基材上或基材内。 , 在第三個具體實例中,本發明之發光物品包括多個像元 本紙乐尺度適用中國國家榡準(CNS ) Λ4規格(210X297公釐)I on or in a substrate. In the third specific example, the light-emitting article of the present invention includes a plurality of picture elements. The paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297 mm).
言:士2設置於單一高台或反轉高台中的發光裝置,丑 :::、監、綠及紅0LED之堆疊結構而單獨或組合提供 馬監、綠或紅光之發射器。 在第四個具體實例中,本參明夕旅土% 口 h 1 、 τ不桊明炙發光物品包括透明基対 土上〈光反射層、在光反射層上呈導波層形式之光 反射結構、及在本發明之道 I π,皮層上(至少一個OLED 〇此 ’波層具有頂端表面、底部表面、及至少三個側面,並中 :個側面相對於基材成低S9G。之角度,及其餘的側面與 土材垂直。自OLED發出之光經反射開光反射層及導波層 <側面1此發出的光經集中及料通過光反㈣中之開 口以通過基材發光。 在第五個具體實例中,第四個具體實例之導波層I有至 少兩個侧面相對於基材成低if9G。之角度,及其餘的側面 與基材垂直。光反射層具有設置在相對於基材成低於9〇。 角度之導波層側面下方的多個開口。自〇LED發出之光因 此經反射開光反射層及導波層之侧面。因此發出的光經集 中及?丨導通過光反射層中之開口,以通過基材發光,並聚 集至共同的焦點。 附圖之簡單説明 圖1A係根據先前技藝之典型有機雙重不均質結構發光 裝置(OLED)之橫剖面圖。 圖IB係根據先如技藝之典型有機單—不均質結構發光 裝置(LED)之橫剖面圖。f ' 圖1C係根據先如技藝之已知單層聚合物l e D結構之橫 -8- 本紙張尺度適用中國國家標準(CNS ) A4規格(2I0X297公釐) f請先聞讀背面之注意事項再填寫本頁) -衣 —ί —------ 經濟部中央標準局負工消費合作社印製 --線------ A 7 - — _ B7 ~ ~~~" ' ' ---------------- 五、發明説明(6 ) 剖面圖。 ‘ 圖1D説明在習知構造之LED結構中之導波的問題。 圖2A、2B及2(:係根據本發明之具體實例之利用藍色有 機發光裝置(OLED)及紅和綠色低向變頻磷光體層之整體 三色像元之橫剖面圖。 圖2D説明根據本發明具體實例之呈高台像元形態之藍 、綠及紅色OLED之.堆疊配置。 圖3顯示本發明之一具體實例的頂視圖。 圖4A至4D説明製造如圖2A所示之本發明之第—個具體 實例之方法。 圖5 A至5E説明製造如圖2'B所示之本發明之第二個具體 實例之方法。 圖6A至6D説明製造如圖2D所示之本發明之第三個具體 實例之方法。 圖7A及7B分別爲本發明之一具體實例的橫剖面圖及頂 視圖。 圖7C爲圖7A所示裝置之反轉形式的橫剖面圖。 圖8 A及8B分別爲本發明之一具體實例的橫剖面圖及頂 視圖。 經濟部中央標聲局貝工消費合作社印裝 (請先閲讀背面之注意事項再填艿本頁) 圖9概略説明Θ > <9 c,内部反射的臨界角。 圖10A-10C説明根據本發明可使用之一些〇LED的變形。 圖ΠΑ-11Β分別以圖示説明發光裝置長度對發光強度及 裝置效率之影響。 __________ - 9 - 本纸張尺度適用中國國家標準〈CNS) Λ4規格(210x29?公釐) 經濟部中央標準局員工消費合作社印製 Λ7 . * _____B? 五、發明説明(7 ) ~--- 詳細説明 本發明之第-個具體實例示於圖2A。在此具體實例中, 由於呈高台結構型式之光反射結構的照準作用,因而導波 降低及輕射輸出增加。此照準係由自高台結構之角壁的全 反射或由自沉積於角壁上之金屬的鏡面反射所達成二王 圖2A所示之裝置包括具有在共同基材37 丄 <--獨南台 堆疊的像元,其中該堆疊包括藍色〇1^〇層2〇及根據特定 堆疊而分別指示爲2丨及22之紅及/或綠色低向變頻磷光體 。基材37 —般係由透明材料,諸如玻璃、石英、藍寶石= 塑膠製成。OLED層係爲DH或SH形態,或如技藝中熟知 之單層的聚合物基OLED。 ' 裝置24係包括水平延伸至亦形成各裝置27及28之頂端 部分之藍色OLED 20的藍色發射器。裝置27係包括藍色 OLED 20及在堆疊之底部部分之綠色低向變頻磷光體22之 綠色發射器,其中磷光體22將來自OLED20之藍色光轉變 成綠色光。第三個裝置28包括設置於藍色〇LED 2〇與綠色 低向變頻磷光體22之間,將來自〇LED 2〇之藍色光轉變成 紅色光i紅色低向變頻磷光體2 1。在此情況,紅色光未被 吸收地通過對紅光爲透明的綠色磷光體22。爲容易製造起 見,綠色低向變頻磷光體22留於裝置28中。或者,第三 個裝置28包括藍色OLED 20及在堆疊之底部部分的紅色低 向變頻磷光體2 1,其中紅色磷光體將來自〇leD 20之藍光 轉變成紅光而不通過綠色低向變頻磷光體層。在第三個装 置28之又另一種配置中,將一層綠色低向變頻磷光體設置 ____ -10- 本紙張尺度適用中國國家標準(CNS ) Λ4現格(210X 29*7公釐) ------ί---裝--------訂------線 (請先間讀背面之注意事項再填荈本百c B7 五、發明説明(8 ) 於藍色OLED 20與紅色低向變頻磷光體2〗之間。在此配置 中’綠色低向變頻壤光體22將使自OLED 20發出之藍光轉 變成綠光,然後紅色低向變頻磷光體2 1將此綠光轉變成紅 光。然而,此種配置由於裝置效率有隨低向變頻步驟數目 之增加而減小的傾向,因而一般而言並不佳。雖然圖2A所 示之具體實例係利用低向變頻嶙光體層,但裝置24 ' 27 、及28可利用藍、綠及紅色〇LED替代,而不使用低向變 頻磷光體層。 可將任何裝置24、27及28之高台壁作成任意的銳角, 以使導波減至最小或防止導波,雖然相對於基材大約35。 45爲較佳。組成裝置24、27及28之最底部部分的照準 介亀層19成一角度,以致—般將被導波至橫向像元内而造 成色洩及解析度和;^度損耗的光經由反射開高台側壁及非 必需的反射器47而由基材37導出。此反射示爲光束r2 , 其自介電層19出現穿過基材37,並使光束尺増加。 非必需的反射器47係由諸如,比方説鋁、銀、Mg/A1或 任何其他適當材料之材料製成。反射器47除了作爲反射器 外,可經由延伸反射器47使與圖3所示之金屬層26相連, 經濟部中央標準局員工消費合作社印掣 (錆先閱讀背1&之注意事項再填寫本頁) 而將其使用作爲互連器。將反射器47使用作爲互連器之— 項明顯優點爲此種互連器係設置於鄰接的高台之間,以致 其可對觀看者隱藏起來。因此所得的顯示不具有如於習知 之顯不裝置中經常看到之在鄰接像元間的暗線。 爲簡單起見,在附圖中,將使用於本發明之〇LEE>裝置示 爲單層《然而,如技藝中所熟知且如此處所説明,如〇LEd -11 - 本紙張尺度適用中國國家標準(cns 經濟部中央標準局員工消费合作社印裝 A7 B7 五、發明説明(9 ) 不爲單層聚合物,則此等層實際上包括多個次層,其次層 之配置係視裝置是否爲DH或SH形態而定。 假如,比方説,在本發明中使用DH OLED,則OLED裝 置20將係由眞空沉積或成長或以另一種方式沉積於IT〇層 之表面上的HTL所組成。頂端的ETL將EL夾於前者與HTL 之間。各HTL、ETL、ΙΤΟ及有機EL層由於其組成及最 小厚度因而係爲透明。各HTL可爲50- 1000埃厚;各el可 爲50-500埃厚·’各ETL可爲50-1000埃厚;及IT〇層可爲 1000-4000埃厚。爲得最適的性能及低電壓操作,各有機層 應保持在上述範園之下限較佳。各裝置24、27及28(不包 括ΙΤΟ/金屬層)以接近500埃厚較佳。有機ETL、EL及HTL 材料之適當例子可見於美國專利第5,294,870號。 形成於ETL之頂部者爲低工作函數(以<4 cV較佳)的金 屬層26M。金屬層26M之適當選擇包括Mg、Mg/Ag、及 積於金屬層26M頂部者爲另一個適合於形成電接 觸之傳導層261。傳導層261可由,例如,iT〇、A1、Ag 或Au製成。爲方便起見,將金屬層26M及261之雙層、纟士構 稱爲金屬層26。在金屬層26上形成接頭26T以對其產生 電連接,且其可由In、Pt ' Au、Ag、及其组合、或技藝 中已知之任何適當材料製成。 如係使用SH OLED結構於提供裝置24、27及28,而非 DH OLED裝置’則ETL及EL層係由單—的多功能層,辑 如先前對圖1B之SH所説明之層13’所提供。此層13,係氫 酿銘或可達成層13'之多功能目的之其他已知材料。然而, -12- 本纸張尺度適用中國國家標準(CNS ) Λ4規格(210x297公楚〉 -I -I m - —-H 1 - I -' ---·· »J_1 - !*! I. I— - n^— l^i -、一UJ1 I mu 1^1 I 1--……-^HK (請先閱讀背面之注意事項再填ft'尽頁) A7 A7 經濟部中央標準局員工消费合作社印裝 五、發明説明(10) 一 DH OLED堆疊較SH OLED堆疊優異處在於DH 〇LED堆疊 一般可容許較高的效率。Words: The light-emitting device of the taxi 2 is installed in a single high platform or inverted high platform. The ugly :::, monitor, green and red LEDs are stacked to provide horse monitor, green or red light emitters individually or in combination. In the fourth specific example, this reference article on the evening tour of Mt. H 1, τ is not bright. The luminous article includes a light reflection layer on a transparent substrate, a light reflection layer in the form of a wave guide layer on the light reflection layer. Structure, and in the invention I π, on the skin layer (at least one OLED) This wave layer has a top surface, a bottom surface, and at least three sides, and the middle side is at a low S9G angle with respect to the substrate. , And the other sides are perpendicular to the earth material. The light emitted from the OLED is reflected to open the light reflection layer and the wave guide layer < side 1 The light emitted by this is concentrated and passed through the opening in the light reflection to emit light through the substrate. In the fifth specific example, the wave-guiding layer I of the fourth specific example has at least two sides that are at an angle lower than if9G. With respect to the substrate, and the other sides are perpendicular to the substrate. The light reflection layer has a The base material is lower than 90 °. Multiple openings under the angle of the side of the wave-guiding layer. The light emitted from the LED is therefore reflected to open the sides of the light-reflecting layer and the wave-guiding layer. The light thus emitted is concentrated and guided through Openings in the light reflecting layer to pass through the substrate Luminescence, and gather to a common focus. Brief description of the drawings Figure 1A is a cross-sectional view of a typical organic dual heterogeneous structure light-emitting device (OLED) according to the previous technology. Figure IB is a typical organic single according to the prior art-no A cross-section view of a homogeneous structure light-emitting device (LED). F 'Figure 1C is a cross-section of a known single-layer polymer le D structure according to the first technology -8- This paper size applies Chinese National Standard (CNS) A4 specification (2I0X297 (Mm) f Please read the notes on the reverse side before filling in this page)-衣 —ί —------ Printed by the Consumers ’Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ----------- A 7 -— _ B7 ~ ~~~ " '' ---------------- 5. Description of the invention (6) Sectional drawing. ‘FIG. 1D illustrates the problem of guided waves in a conventionally constructed LED structure. 2A, 2B, and 2 (: are cross-sectional views of an overall three-color pixel using a blue organic light-emitting device (OLED) and red and green low-frequency conversion phosphor layers according to a specific example of the present invention. FIG. 2D A specific example of the invention is a stacked configuration of blue, green, and red OLEDs in the form of high-level pixel elements. Fig. 3 shows a top view of a specific example of the present invention. Figs. 4A to 4D illustrate the fabrication of the first embodiment of the present invention shown in Fig. 2A. A method of a specific example. Figures 5 A to 5E illustrate a method of manufacturing a second specific example of the present invention shown in Figure 2'B. Figures 6A to 6D illustrate a third method of manufacturing the present invention shown in Figure 2D. 7A and 7B are a cross-sectional view and a top view, respectively, of a specific example of the present invention. FIG. 7C is a cross-sectional view of an inverted form of the device shown in FIG. 7A. FIGS. 8A and 8B are respectively A cross-sectional view and a top view of a specific example of the present invention. Printed by the Shellfish Consumer Cooperative of the Central Panasonic Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Figure 9 outlines Θ > < 9 c, critical angle of internal reflection. The deformation of some LEDs that can be used is shown in the figure. ΠΑ-11B illustrates the effect of the length of the light-emitting device on the light intensity and the efficiency of the device. __________-9-This paper size applies the Chinese National Standard (CNS) Λ4 specification (210x29) ? Mm) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Λ7. * _____B? V. Description of Invention (7) ~ --- Detailed description The first specific example of the present invention is shown in Figure 2A. In this specific example, due to the collimating effect of the light reflecting structure in the form of a high platform structure, the guided wave is reduced and the light emission output is increased. This sight is achieved by total reflection from the corner wall of the high platform structure or by specular reflection from the metal deposited on the corner wall. The device shown in Figure 2A includes Stacked pixels, where the stack includes blue 0 1 ^ 0 layers 20 and red and / or green low-frequency variable-frequency phosphors indicated as 2 丨 and 22 respectively according to a particular stack. The substrate 37 is generally made of a transparent material such as glass, quartz, sapphire = plastic. The OLED layer is in the form of DH or SH, or a single-layer polymer-based OLED as is well known in the art. 'Device 24 is a blue emitter including a blue OLED 20 extending horizontally to the top portion of each device 27 and 28 as well. The device 27 comprises a blue OLED 20 and a green emitter of a green low-frequency conversion phosphor 22 at the bottom of the stack, wherein the phosphor 22 converts blue light from the OLED 20 into green light. The third device 28 includes a blue LED 0 and a green low-frequency conversion phosphor 22, which converts blue light from the LED 20 to red light i red low-frequency conversion phosphor 21. In this case, the red light passes through the green phosphor 22 which is transparent to the red light without being absorbed. For ease of manufacture, the green low-frequency conversion phosphor 22 is left in the device 28. Alternatively, the third device 28 includes a blue OLED 20 and a red low-frequency conversion phosphor 21 at the bottom portion of the stack, wherein the red phosphor converts blue light from OLED 20 to red light without passing through the green low-frequency conversion Phosphor layer. In yet another configuration of the third device 28, a layer of green low-direction variable frequency phosphor is set ____ -10- This paper size is applicable to the Chinese National Standard (CNS) Λ4 grid (210X 29 * 7 mm)- ---- ί --- install -------- order ------ line (please read the notes on the back first and then fill in this hundred c B7 V. Description of the invention (8) Yu Lan Between the color OLED 20 and the red low-direction variable-frequency phosphor 2. In this configuration, the 'green low-direction variable-frequency phosphor 22 will convert the blue light emitted from the OLED 20 into green light, and then the red low-directional variable-frequency phosphor 2 1 This green light is converted into red light. However, this configuration is generally not good because the efficiency of the device tends to decrease as the number of low-frequency conversion steps increases. Although the specific example shown in FIG. 2A uses Low-direction frequency conversion phosphor layer, but devices 24'27, and 28 can be replaced with blue, green, and red LEDs without using low-direction frequency conversion phosphor layers. The high platform walls of any device 24, 27, and 28 can be made arbitrary Acute angle to minimize or prevent guided waves, although it is about 35 relative to the substrate. 45 is preferred. Composition devices 24, 27 And the collimating medial layer 19 of the bottom part of 28 is at an angle, so that the general wave will be guided into the lateral pixels to cause color leakage and resolution; and the light of degree loss will be reflected through the side wall of the platform and unnecessary. The reflector 47 is derived from the substrate 37. This reflection is shown as a light beam r2, which emerges from the dielectric layer 19 through the substrate 37 and increases the beam size. The optional reflector 47 is made of, for example, aluminum, Made of silver, Mg / A1, or any other suitable material. In addition to the reflector 47, the reflector 47 can be connected to the metal layer 26 shown in FIG. 3 through the extended reflector 47. The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Imprint (read the notes on Back 1 & then fill out this page) and use it as an interconnector. Use reflector 47 as an interconnector—a significant advantage is that this interconnector is placed next to So that it can be hidden from the viewer. Therefore, the resulting display does not have the dark lines between adjacent pixels as often seen in conventional display devices. For simplicity, in the drawings, Will be used in the present invention. Shown as a single layer "However, as is well known in the art and as explained here, such as 〇LEd -11-This paper size applies to Chinese national standards (cns, Central Standards Bureau, Ministry of Economic Affairs, Employee Consumer Cooperatives, printed A7 B7, V. Description of the invention ( 9) Not a single-layer polymer, these layers actually include multiple sub-layers, and the configuration of the sub-layers depends on whether the device is in the form of DH or SH. For example, if DH OLED is used in the present invention, Then the OLED device 20 will be composed of HTL deposited or grown in another way or deposited on the surface of the IT0 layer. The top ETL sandwiches the EL between the former and the HTL. Each HTL, ETL, ITO and organic EL layer is transparent due to its composition and minimum thickness. Each HTL may be 50-1000 Angstroms thick; each el may be 50-500 Angstroms thick; each ETL may be 50-1000 Angstroms thick; and the IT0 layer may be 1000-4000 Angstroms thick. For optimum performance and low voltage operation, it is better to keep the organic layers below the above-mentioned range. Each of the devices 24, 27, and 28 (excluding the ITO / metal layer) is preferably approximately 500 angstroms thick. Suitable examples of organic ETL, EL, and HTL materials can be found in US Patent No. 5,294,870. Formed on top of the ETL is a metal layer 26M with a low work function (preferably < 4 cV). Appropriate choices for the metal layer 26M include Mg, Mg / Ag, and the one on the top of the metal layer 26M is another conductive layer 261 suitable for forming an electrical contact. The conductive layer 261 may be made of, for example, iT0, Al, Ag, or Au. For convenience, the double-layered structure of the metal layers 26M and 261 is referred to as the metal layer 26. A joint 26T is formed on the metal layer 26 to make an electrical connection thereto, and it may be made of In, Pt 'Au, Ag, and combinations thereof, or any suitable material known in the art. If the SH OLED structure is used to provide devices 24, 27, and 28 instead of DH OLED devices, then the ETL and EL layers are single-function layers, as described in layer 13 'previously described for SH in FIG. provide. This layer 13 is a hydrogen sterilizer or other known material that can achieve the multifunctional purpose of layer 13 '. However, -12- This paper size applies the Chinese National Standard (CNS) Λ4 specification (210x297). -I -I m-—-H 1-I-'--- ·· »J_1-! *! I. I—-n ^ — l ^ i-, one UJ1 I mu 1 ^ 1 I 1-- ……-^ HK (Please read the notes on the back before filling in the ft 'end page) A7 A7 Staff of Central Bureau of Standards, Ministry of Economic Affairs Consumption Cooperative Printing V. Description of the Invention (10) A DH OLED stack is superior to SH OLED stacks in that DH LED stacks generally allow higher efficiency.
在各π置24、27及28之橫越OLED兩端的電壓係經控 制,以對特定像元在任何時刻提供期望的所得發光顏色及 亮度。很明顯地,裝置24發出藍光,裝置27發出綠光及 裝置28發出紅光。此外,可引動裝置24、27及28之不同 组合,以對個別像元部分與各裝置24、27及28中之電流 大小有關地選擇性得到期望的光顏色D 裝置24、27及28可分別由電池32、31及3〇順向偏壓 。在圖2A中,電流自各電池32、31及3〇之正極經過各個 別裝置之層而流入其相關裝置之陰極接頭26丁,並自形成 於傳導層35上之陽極接頭35Τ流至各電池32 ' 31及30之 負極。結果光自各裝置24、27及28中之01^〇層發出。 隔離層25防止陰極及陽極層短路。當像元集合成顯示時, 陽極及陰極接頭產生於顯示之邊緣,比方説。 各裝置24、27及28視需要可分別在觸點35與層2 1、 22及19之間包括低損耗、高反射率之介電材料,諸如丁丨〇2 之層·?6。當觸點35係由爲高損耗的材料IT〇製成,以致 來自監色OLED層20之光可容易地被導波入並被觸點35 吸收時,層36爲特佳。ΤΊ02及ΐτο之反射率分別大約爲 2·6及2.2。層36因此實質上地消除在ΙΤ〇中之導波及吸收 ,自藍色OLED層20發出之光現傳輸通過層36或在層36 内導波並被高台側壁及瓦射器47所反射。視需要可在裝置 24、27及28中包括類似的層作爲中間層以增進性能,諸 13- ^ t ( CNS ) ( 210 X 297^^7 (請先聞讀背面之注意事項再填寫本頁) -装. 線 五·、發明説明(11 ) A 7 B7 經濟部中央標準局負工消費合作社印裝 如電洞注入增進層。 在本發明之第二個具體實例中,以相反或反轉方式構造 ^ 2A之裝置’以提供由堆疊頂部而非底部之發a。根據此 第—個具體實例,如圖2B所示(未按比例描繪卜"反轉,,角 壁局台結構之照準作用抑制沿結構層的導波。在此具體實 例中,由於各高台之頂端部分與基材緊鄰,以致由各高△ 發出之光經引導離開基材,因而將高台稱爲,,反轉"。若: 圖2B之反轉高台結構,則沿結構層之導波會使在一像元中 之低向變頻層被自附近像元所發出之光造成*注意的光激 升,一種稱爲"串音••或色洩的現象。 在圖2B所示之具體實例中,在基材51上沉積_層介電 材料,諸如SiOx、SlNx、聚醯亞胺等等,並經蝕刻而形成 區域50,在其之間留下平底部的凹洞。區域5〇使可經由 積包含此等裝置之層,而形成裝置241、27,及28,之反轉 高台形態。 各裝置24、27及28之反轉高台包括反射金屬接觸層56 ,隔離層53,藍色OLED層20,介電層55,及分別供反 轉南台裝置28'及27'用之紅色或綠色磷光體21及22。另一 種方式爲反轉高台裝置28’具有設置於⑴在藍色〇LED層 20與紅色磷光體21之間,或(ii)在紅色磷光體層21上之一 層綠色碟光體。金屬接觸層56可由銘、銀、jyjg/Al等等製 成。金屬接觸層56除了可提供作爲反射器外,其以使用$ 爲互連焱較佳。將金屬接,觸層5 6使用作爲互連器之—項明 顯優點爲其係設置於裝置24'、27,及28,下方,因此可對觀 -14- 本紙張尺度適用中國國家標準(CNS ) A4規格(2IOX297公漤) ------;---1 裝 I ,—— 請先閱讀背面之注意事項再填寫本頁) -訂 線 I - I In - ·The voltage across the OLED at 24, 27, and 28 is controlled to provide the desired resulting color and brightness for a particular pixel at any time. Obviously, device 24 emits blue light, device 27 emits green light and device 28 emits red light. In addition, different combinations of the devices 24, 27, and 28 can be actuated to selectively obtain the desired light color for the individual pixel portion and the current magnitude in each device 24, 27, and 28. Devices 24, 27, and 28 can be respectively Forward biased by batteries 32, 31 and 30. In FIG. 2A, the current flows from the positive electrode of each battery 32, 31, and 30 to the cathode terminal 26D of the related device through the layers of the respective devices, and flows from the anode terminal 35T formed on the conductive layer 35 to each battery 32 '31 and 30 negative. As a result, light is emitted from the 01 ^ 0 layer in each of the devices 24, 27, and 28. The isolation layer 25 prevents a short circuit between the cathode and anode layers. When the pixels are assembled into a display, the anode and cathode connections are created at the edges of the display, for example. Each device 24, 27, and 28 may include a low-loss, high-reflectivity dielectric material between the contact 35 and the layers 21, 22, and 19, respectively, such as the layer · 6 of Ding 0 2 as needed. The layer 36 is particularly preferable when the contact 35 is made of the material IT0 which is a high loss so that the light from the monitor color OLED layer 20 can be easily guided into and absorbed by the contact 35. The reflectances of ΤΊ02 and ΐτο are approximately 2.6 and 2.2, respectively. Layer 36 thus substantially eliminates the guided waves and absorption in ITO, and the light emitted from blue OLED layer 20 is now transmitted through layer 36 or guided within layer 36 and is reflected by the side walls of the platform and the radiator 47. If necessary, similar layers can be included in the devices 24, 27, and 28 as intermediate layers to improve performance. 13- ^ t (CNS) (210 X 297 ^^ 7 (Please read the precautions on the back before filling out this page) )-Equipment. Line V. Description of the invention (11) A 7 B7 Printed as a hole injection enhancement layer by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. In the second specific example of the present invention, reverse or reverse The device ^ 2A is constructed in a manner to provide a hair from the top of the stack rather than the bottom. According to this first specific example, as shown in FIG. 2B (not scaled, " inverted, " The collimation suppresses the guided waves along the structural layer. In this specific example, since the top part of each high platform is close to the substrate, so that the light emitted by each high △ is guided away from the substrate, the high platform is called, " If: Figure 2B of the inverted high platform structure, the guided waves along the structure layer will cause the low-frequency conversion layer in one pixel to be caused by light emitted from nearby pixels. This phenomenon is called " crosstalk •• or color leakage. In the specific example shown in FIG. 2B, A layer of dielectric material, such as SiOx, SlNx, polyimide, etc., is deposited on the substrate 51 and etched to form a region 50 with a flat bottom cavity in between. The region 50 makes the via The layers of these devices form the inverted plateau of devices 241, 27, and 28. The inverted plateaus of each device 24, 27, and 28 include a reflective metal contact layer 56, an isolation layer 53, and a blue OLED layer 20, The dielectric layer 55, and the red or green phosphors 21 and 22 for the inversion south stage devices 28 'and 27', respectively. Another way is that the inversion high stage device 28 'has a blue LED layer 20 and Between the red phosphors 21, or (ii) one of the green discs on the red phosphor layer 21. The metal contact layer 56 may be made of metal, silver, jyjg / Al, etc. The metal contact layer 56 may be provided as a reflection in addition to Outside the device, it is better to use $ as the interconnect. It is better to use the metal connection and the contact layer 5 6 as the interconnector. An obvious advantage is that it is arranged below the devices 24 ', 27, and 28, so it can be used. Fangguan-14- This paper size applies Chinese National Standard (CNS) A4 specification (2IOX297 cm) ------;- -1 Install I, —— Please read the precautions on the back before filling this page)-Thread I-I In-·
• 1— I I I 經濟部中央標準局負工消资合作社印裝 Α7 Β7 五 '發明説明(12) 看者隱藏起來。因此所得的顯示不具有如於習知之顯示裝 置中經常看到之在鄰接像元間的暗線。 各反轉高台更包括具有薄的(約50-200埃)低工作函數金 屬層52A及較厚的(約5〇〇_4〇〇〇埃)IT〇塗層之透明接 觸區域52。相較於第一個具體實例,電池30、3 1、及32 之極性係相反。結果當採用順向偏壓於發光時,流過裝置 24'、27·、及28,之電流係與圖2A之具體實例的方向相反。 圖2B所示之具體實例一般可較圖2A所示之具體實例有 更高的解析度。此係由於圖2 A所示之具體實例由於在發光 區域與基材表面間之相當大的距離,因而可造成自各裝置 24、27及28發出相當寬廣的光束。相對地,自圖2B之各 反轉高台結構發出之光束並未通過照準介電層或基材材料 。其結果爲當與自圖2A所示之各高台裝置發出之光束比 較時’自圖2B之反轉高台裝置24ι、27,及28,發出相當有 的光束。 除了如圖2 B所示之形態,反轉高台係藉由独刻介電層以 形成區域50而形成外,可經由在圖案基材6〇上形成裝置 24’、27’及28’而製造反轉高台,如圖2C所示。圖案基材 60中具有凹洞,各凹洞具有實質上爲平的底部表面及傾斜 側壁。各側壁係傾斜以與底部表面產生鈍角,其中大約 1j5 -145 爲較佳。凹洞之深度可相當淺,在1000-3000 埃左右’及視需要的寬。例如,圖案基材60係由其中具有• 1— I I I Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Consumers and Consumers Cooperatives Α7 Β7 Five 'Explanation (12) The viewer is hidden. The resulting display therefore does not have the dark lines between adjacent pixels as is often seen in conventional display devices. Each reversal plateau further includes a transparent contact region 52 having a thin (about 50-200 angstroms) low work function metal layer 52A and a thicker (about 50,000-4000 angstroms) IT0 coating. Compared with the first specific example, the polarities of the batteries 30, 31, and 32 are opposite. As a result, when the forward bias is used to emit light, the currents flowing through the devices 24 ', 27, and 28 are opposite to the direction of the specific example of FIG. 2A. The specific example shown in Fig. 2B can generally have a higher resolution than the specific example shown in Fig. 2A. This is because the specific example shown in FIG. 2A can cause a relatively wide light beam to be emitted from each of the devices 24, 27, and 28 due to the considerable distance between the light-emitting area and the surface of the substrate. In contrast, the light beams emitted from the respective inverted platform structures of FIG. 2B did not pass through the dielectric layer or the substrate material. As a result, when compared with the light beams emitted from the respective platform devices shown in Fig. 2A ', considerable beams are emitted from the inverted platform devices 24m, 27, and 28 of Fig. 2B. In addition to the morphology shown in FIG. 2B, the inverted high stage is formed by forming a region 50 by a single dielectric layer, and can be manufactured by forming devices 24 ', 27', and 28 'on a pattern substrate 60. Reverse the high platform, as shown in Figure 2C. The pattern substrate 60 has recesses, and each recess has a substantially flat bottom surface and inclined sidewalls. Each side wall is inclined to create an obtuse angle with the bottom surface, of which about 1j5 -145 is preferred. The depth of the recess can be quite shallow, around 1000-3000 Angstroms' and as wide as needed. For example, the pattern substrate 60 is formed by
_ I 由標準的方向钱刻法所形成之凹洞的si製成。除了圖2B 及2C所不之具有平直、傾斜側壁之凹洞結構外,亦可有 -------------ί ------IT------.^ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準 15- (2ί〇Χ297公釐) 經濟部中央標準局負工消费合作社印製 -----« 五、發明説明(13) 他檢剖面。例如,可考_ , 5怂具有半圓形橫剖面之凹洞。另外 可知本發明之任何且砰电、 〜罢1勒斯 7八把Λ例乏高台或反轉高台自頂視圖 叹置於實質上的任何形狀 二 /狀啫如万形、三角形、圓形、及 一角形。 在如圖2Α、2Β式9Γ杯-、 ^ + 次2<:所不之任何具體實例中,並沒有反 射率相對於及在OLED之發#居命成, a ±,, Αα u 知光層與續:光體層之間較小的材 :j致由OLED發出之所有光子皆被嶙光體吸收。如此 ,致藍色Μ輸送至紅色及綠色鱗光體内之效率增加。 田使用於夕色應用中#,使用於本發明之顯示中的各像 元同時或分別發出紅、綠及藍光。或者當使用於單色應用 中時’各像元發出單一顏色。 現將對示於圖2Α之本發明的具體實例説明在共同基材 37上製造多色LED之方法。此方法概略説明於圖4A_4D, 其並不打算照比例繪製。可採用以下步驟於製得多色有機 裝置陣列: 0將5-10微米透明的介電層19沉積於基材37上。介電 層19應具有低於或等於基材37之反射率較佳。層19 例如可爲SiOx或鐵氟龍(Teflon)。 2) 沉積綠色磷光體層22。 3) 沉積薄的蝕刻終止介電層23,諸如SiOx。 4) 沉積紅色磷光體層2 1。裝置於此步骤之後看起來如圖 4A所示。_ I is made of the si of the cavity formed by the standard directional money carving method. In addition to the hollow structure with straight, inclined sidewalls not shown in Figures 2B and 2C, there can also be ------------- ί ------ IT ------ . ^ (Please read the notes on the back before filling this page) This paper size applies to Chinese National Standard 15- (2ί297 × 297 mm) Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ---- Description of the invention (13) Examination section. For example, consider _, 5 to suggest recesses with semi-circular cross sections. In addition, it can be seen that any of the present invention is slamming, ~ 1, 1 7, 78, 例, 乏 example, or reversed platform from the top view sighed in virtually any shape, such as a shape, triangle, circle, And a corner. In Figure 2A, 2B formula 9Γ cup-, ^ + times 2 < in any specific example, there is no reflectance relative to and in the hair of the OLED # prestige, a ± ,, Αα u light-sensitive layer And continued: the smaller material between the photobody layers: j causes all photons emitted by the OLED to be absorbed by the phosphor. In this way, the efficiency with which blue M is transported into the red and green scales is increased.田 用于 夕 色 应用 #, each pixel used in the display of the present invention emits red, green and blue light simultaneously or separately. Or when used in monochrome applications, each pixel emits a single color. A specific example of the present invention shown in Fig. 2A will now be described a method of manufacturing a multi-color LED on a common substrate 37. This method is illustrated schematically in Figures 4A-4D and is not intended to be drawn to scale. The following steps can be used to make an array of multicolor organic devices: 0 A 5-10 micron transparent dielectric layer 19 is deposited on a substrate 37. The dielectric layer 19 should preferably have a reflectivity lower than or equal to that of the substrate 37. The layer 19 can be, for example, SiOx or Teflon. 2) A green phosphor layer 22 is deposited. 3) Deposit a thin etch stop dielectric layer 23, such as SiOx. 4) Deposit the red phosphor layer 21. The device looks like Figure 4A after this step.
I 5) 經由反應性離子或濕,式化學蝕刻之石板照相成型產生 如圖4B所示之二維高台結構。 16- 度適用中國國家標準(CNS ) Λ4規格(210X297公釐) ^---裝 ------訂-------線 (請先聞讀背面之注意事項再填艿本頁) A? B7 以將 五、發明説明(14 6) 經由適當的化學或反應性離子蝕刻成型及蚀刻 該紅色磷光體2 1自高台之三分之一移除。 7) 經由適當的化學或反應性離子蝕刻成型及蝕刻,以將 該綠色磷光體22自高台之第二個三分之—移除。以、 8) 沉積透明的傳導性材料,諸如ιτο ,以在帑古 仏嘁π台之頂 邵製造方形觸點3 5。 9) 沉積金屬(未示於圖中)並將條狀觸點成型 U 0,以形 成知狀接觸金屬行。此種成型可藉由,例如 J w,A1之陰 蔽(shadow masking)、升空(llft_off)或氣化物反應性離 子蝕刻,例如,A1,而完成。 10) 沉積隔離電介質25,諸如SiNx。裝置於此步驟之後看 起來如圖4 C所示。 11) 經由反應性離子或濕式蝕刻在隔離電介質中蝕刻出窗 狀物,而得到藍色OLED 20之觸點β 12) 在所有物件上沉積藍色〇LED層2〇。層2〇可爲如先前 所説明之SH或DH結構。 b)在所有物件上沉積金屬積覆26M及261,並將列金屬條I 5) Through reactive ion or wet, chemically etched slate photographic molding to produce a two-dimensional high platform structure as shown in Figure 4B. 16-degree applies to Chinese National Standard (CNS) Λ4 specification (210X297 mm) ^ --- installation ------ order ------- line (please read the notes on the back before filling in the transcript (Pages) A? B7 to describe the invention (14 6) by appropriate chemical or reactive ion etching to form and etch the red phosphor 21 from one third of the platform. 7) The green phosphor 22 is removed from the second third of the high platform by appropriate chemical or reactive ion etching molding and etching. 8) Deposit transparent conductive materials, such as ιτο, to make square contacts 3 5 on top of the ancient platform. 9) Deposit metal (not shown) and shape the strip contact U 0 to form a known contact metal row. This molding can be accomplished by, for example, shadow masking, lift off (llft_off), or gas reactive ion etching such as A1. 10) Deposit an isolation dielectric 25, such as SiNx. The device looks like Figure 4C after this step. 11) The window is etched in the isolation dielectric by reactive ions or wet etching to obtain the contact β of the blue OLED 20 12) The blue LED layer 20 is deposited on all objects. Layer 20 may be a SH or DH structure as previously explained. b) Deposit metal overlays 26M and 261 on all objects, and arrange metal bars
狀觸”'占及五屬反射备4 7成型於高台之側面上,如圖4 D 所示。 雖然可採用以上列舉之方法於製造圖2A所示之具體實 例,但其他的方法步驟亦爲可行。例如,對此相同目的, 可以直接蝕刻基材3 7替代沉積並蝕刻1 9而形成各裝置 9 4 ^ · 27及28之尚台底部,因此而免除層19之需求β另一 個例子爲可利用對準陰蔽將磷光體及〇led層沉積於預蝕 -------^--- --- i L__ (請先閱讀背面之泣意事項再填艿本頁) 、-° 翅濟部中央標準局員工消f合作社印掣 )Μ規格(2丨Οχ]9?公楚 A7 B7 五、 發明説明(15 刻的層19或預蝕刻的基材3 7上。 (請先閱讀背面之注意事項再填寫本頁) 現將對示於圖2 B之本發明的具體實例説明在共同基材 51上製造反轉多色LED之方法。可使用此相同方法於形成 圖2C所示之具體實例,除了係使用圖案基材6〇替代其上 具有介電區域5 0之平的基材5 1 。此方法概略説明於圖 5 A-5E ’其並不打算照比例績製。可採用以下步驟於達成 圖2B所示之具體實例: 1) 將介電塗層5 0沉積於基材5 1上,此基材5 1可爲金屬 ’δ '塑膠層、或其他適當的基材材料。層應經得起 選擇性的蚀刻,且可爲例如Si〇x、SiNx、聚醯亞胺或 鐵氟龍。 2) 触刻介電塗層留下區域50,以致在其間形成平底凹洞。 •0將金屬積覆56沉積於所有物件上,並將金屬成型以產 生高台反射器及列金屬條狀觸點。 4) 沉積隔離層53,諸如SiCb。於此步驟之後,裝置看起 來如圖5 A所示。 5) 在該隔離塗層中打開窗狀物,以供藍色〇leD 20觸點 用。 經濟部中决標準局員工消費合作社印裂 6) 在所有物件上沉積藍色0LED層2〇。層2〇可爲如先前 對圖2A所示之具體實例中所說明之爲或DH結構, 但在成層上反轉。 7) 沉積透明的ITO觸點52。 8) 將该透明的ITO 52成,型,以製造行條狀觸點。 9) 沉積一層介電材料55,諸如Si〇x。於此步驟之後,裝 -18 本紙法尺度適财_家料(CNS ΤΛ4現格(210X297,The shape of the "contact" and the five kinds of reflection preparations 4 7 are formed on the side of the high platform, as shown in Figure 4 D. Although the methods listed above can be used to manufacture the specific example shown in Figure 2A, other method steps are also It is feasible. For example, for the same purpose, the substrate 3 7 can be directly etched instead of being deposited and etched 19 to form the bottom of each device 9 4 ^ · 27 and 28, thus eliminating the need for the layer 19 β Another example is Alignment shade can be used to deposit the phosphor and the OLED layer in the pre-etching ------------ ^ --- --- i L__ (please read the weeping matter on the back before filling this page),- ° Staff of the Central Bureau of Standards of the Ministry of Economic Affairs, China, Cooperative cooperatives, M specifications (2 丨 〇χ) 9? Gongchu A7 B7 V. Description of the invention (15 engraved layer 19 or pre-etched substrate 3 7. (please first (Read the notes on the back and fill in this page again.) The specific example of the present invention shown in Figure 2B will now be used to explain the method of manufacturing an inverted multicolor LED on a common substrate 51. This same method can be used to form the substrate shown in Figure 2C. The specific example shown is in addition to using a patterned substrate 60 instead of a flat substrate 5 1 having a dielectric region 50 thereon. It is illustrated in Figure 5 A-5E 'It is not intended to be scaled. The following steps can be used to achieve the specific example shown in Figure 2B: 1) A dielectric coating 50 is deposited on a substrate 51, and this substrate The material 51 may be a metal 'δ' plastic layer, or other suitable substrate material. The layer should withstand selective etching, and may be, for example, SiOx, SiNx, polyimide, or Teflon. 2 ) The etched dielectric coating leaves area 50 so that a flat-bottomed cavity is formed in between. • 0 Deposits metal overlay 56 on all objects and shapes the metal to create a high-profile reflector and a row of metal strip contacts. 4) Deposit an isolation layer 53, such as SiCb. After this step, the device looks as shown in Figure 5 A. 5) A window is opened in the isolation coating for blue OLED 20 contacts. Economy 6) Deposition of blue 0LED layer 20 on all objects. Layer 20 can be a DH structure or a DH structure as described in the specific example shown previously in FIG. 2A, but Inverted in layers. 7) Deposit transparent ITO contacts 52. 8) Form the transparent ITO 52 into a shape to make a strip-shaped contact. After 9) depositing a layer of dielectric material 55, such as Si〇x. In this step, the paper loading process of the present -18 _ scale appropriate financial family material (CNS ΤΛ4 now grid (210X297,
、發明説明(16) 經濟.邓中央標率局員工消f合作社印製 置看起來如圖5B所示。 1〇)'几積紅色磷光體層21,而獲致如圖5C所示之形態。 ^成担並蚀刻,以將該紅色磷光體21自高台之前三分之 —移除。 12) 也積綠色磷光體層22,而獲致如圖5D所示之形態。 13) 成型並姓刻,以將該綠色磷光體22自高台之第二個三 +之二移除,而獲致如圖5E所示之形態。 雖然圖2A、2B及2C係關於多色顯示,但此等圖之高台 及反轉高台形態亦可應用至單色顯示,其中各像元包括僅 可發出單—顏色的單—高台或反轉高台結構。 在本發明之第三個具體實例中,藍色、綠色及紅色OLED 係设置於如圖2D所示之堆疊形態丨〇〇。此一堆疊配置説明 於1994年12月13曰提出申請之共同申請中的美國申請案 〇8/3 54,674,及1995年12月6曰提出申請之PCT國際申請 案公告第WO 96/19792號,將其揭示内容併入本文爲參考 資料。本發明利用此堆疊配置結合高台結構,以如先前所 論述之使導波減至最小及使效率增至最大。在圖2D所示之 具體實例中,藍20、綠1 10及紅色11 1 〇LED —個堆疊於 另一個之上,各OLED由透明的傳導層26彼此分隔開,以 使各裝置可接受個別的偏壓位能而經由堆疊發光。各〇LED 2〇、110及111可如先前所説明之爲SH或DH類型。如圖 2D所示,OLED 20、11〇及1Π之堆疊配置係設置於傳導Explanation of the invention (16) Economy. The print of the cooperative of cooperatives of employees of Deng Central Standards Bureau looks as shown in Figure 5B. 1) A few layers of red phosphor layer 21 are obtained, resulting in the shape shown in FIG. 5C. It is etched and etched to remove the red phosphor 21 one-third of the way from the high platform. 12) The green phosphor layer 22 is also deposited, and the shape shown in FIG. 5D is obtained. 13) Forming and engraving to remove the green phosphor 22 from the second three + two of the high platform to obtain the form shown in FIG. 5E. Although Figures 2A, 2B, and 2C are for multi-color display, the high and inverted forms of these figures can also be applied to monochrome display, where each pixel includes only single-color single-high or inverted High platform structure. In a third specific example of the present invention, the blue, green and red OLEDs are arranged in a stacked configuration as shown in FIG. 2D. This stacking configuration describes U.S. application 08 / 54,674 in the joint application filed on December 13, 1994, and PCT International Application Publication No. WO 96/19792, filed on December 6, 1995. The disclosures are incorporated herein by reference. The present invention utilizes this stacked configuration in combination with a high platform structure to minimize guided waves and maximize efficiency as previously discussed. In the specific example shown in FIG. 2D, blue 20, green 1 10, and red 11 1 0 LEDs are stacked on top of each other, and each OLED is separated from each other by a transparent conductive layer 26 to make each device acceptable Individual bias potentials can be emitted through the stack. Each OLED 20, 110 and 111 may be of the SH or DH type as previously explained. As shown in FIG. 2D, the stacked configurations of OLEDs 20, 110, and 1Π are set to conductive
I 層II2、介電層19及透唧基材37上。 各傳導層26包括低工作函數(以<4 eV較佳)的金屬層 19 本紙掁尺度適用中國國家標準(CNS ) A4規格(210x297公t ) (請先閲讀背面之注意事項再填窍本頁)The I layer II2, the dielectric layer 19, and the transparent substrate 37 are provided. Each conductive layer 26 includes a metal layer with a low working function (preferably < 4 eV). 19 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297mm t) (Please read the precautions on the back before filling in the tips page)
經濟部中央標準局貝工消费合作社印^ Α7 Β7 五、發明説明(17 ) 一-- 26M,諸如Mg、Mg/Ag、&U/A1,以及適合於形成電接 觸之額外的傳導層261。當然在〇LED 2〇、11〇及^丨之 間,及在基材37和OLED20之間的户斤有傳導層必須實質上 爲透明。然而,在堆#頂端之在〇LED iu上之傳導層% 不需爲透明,而以具反射性較佳。在金屬層%上形成接頭 26T以對其產生電連接,且其可由in、pt、Au、八名、及 其組合、或技藝中已知之任何適當材料製成。 堆疊形態一 1〇〇視需要可在傳導層112與介電層19之間包 括低損耗、高反射率之介電材料,諸如丁1〇2之層%。當傳 導層1 12係由爲高損耗的材料⑽製成,以致來自〇led 層20、11〇及ln之光可容易地被導波入並被傳導層ip 吸收時,層36爲特佳。層36實質上地消除在ιτ〇中之導 波及《,自〇LED 20、11〇及ηι發出之光現實質上地 傳輸遇過層36。此外’層36可具有傾斜側壁以反射任何 朝向基材3 7之導波光。 堆® OLED像ye 1 00之製造,例如係經由陰蔽或乾式蝕 刻而το成。例如,堆疊〇LED像元1〇〇係由以下步驟製得 ’如概略示於圖6A-6D : 0知5-10微米透明的介電層19沉積於透明基材37上。 介電層19應具有低於或等於基材37之反射率。層19 例如可爲Si〇x或鐵氟龍。 2)沉積一層透明的傳導性材料112,諸如IT〇。於此步驟 足後’裝置看起來如圓6Α所示。 _ J)蝕刻而形成高台結構,如圖6 Β示。 ----i^L------1T------^ (請先間讀背面之注意事項再填寫本頁)Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives ^ A7 B7 V. Description of the Invention (17) A-26M, such as Mg, Mg / Ag, & U / A1, and an additional conductive layer 261 suitable for forming electrical contacts . Of course, the conductive layer between OLED 20, 110, and ^, and between the substrate 37 and the OLED 20 must be substantially transparent. However, the conductive layer% on the LED iu at the top of the stack # need not be transparent, but is more reflective. A joint 26T is formed on the metal layer% to make an electrical connection thereto, and it may be made of in, pt, Au, eight, and combinations thereof, or any suitable material known in the art. The stacking form 100 may include a low-loss, high-reflectivity dielectric material between the conductive layer 112 and the dielectric layer 19 as needed, such as a layer% of Ding 102. The layer 36 is particularly preferable when the conductive layer 112 is made of a material of high loss such that light from the oled layers 20, 110, and ln can be easily guided into the wave and absorbed by the conductive layer ip. The layer 36 substantially eliminates the guided wave in ιτ〇 and the light emitted from OLED 20, 110 and η is now substantially transmitted through layer 36. In addition, the 'layer 36 may have inclined sidewalls to reflect any guided light directed toward the substrate 37. The fabrication of OLEDs like ye 100, for example, is done by shadowing or dry etching. For example, stacked OLED pixels 100 are prepared by the following steps, as shown schematically in Figures 6A-6D: 5-10 micron transparent dielectric layer 19 is deposited on a transparent substrate 37. The dielectric layer 19 should have a reflectance lower than or equal to the substrate 37. The layer 19 may be, for example, SiOx or Teflon. 2) Deposit a layer of transparent conductive material 112, such as IT0. After this step, the device looks like circle 6A. J) etching to form a mesa structure, as shown in FIG. 6B. ---- i ^ L ------ 1T ------ ^ (Please read the precautions on the back before filling this page)
經濟部中央標準局負工消费合作社印製 A7 B7五、發明説明(18 ) 4) 沉積藍色OLED層20。層20可爲如先前所説明之SH 或DH結構。 5) 沉積傳導層26M及261。 6) 沉積綠色OLED層110。層110可爲如先前所説明之SH 或DH結構。 7) 沉積傳導層26M及261。 8) 沉積紅色OLED層1 1 1。層1 11可爲如先前所説明之SH 或DH結構。 9) 沉積傳導層26M及261。於此步驟之後,裝置看起來如 圖6C所示。 10) 在高台側壁上沉積反射器47,及在各層261上沉積接 頭2 6T。最終的裝置看起來如圖6D所示。 雖然圖2D顯示使用堆疊OLED形態結合高台結構,本發 明亦考慮在反轉高台結構内使用堆疊OLED。此一反轉高 台結構係經由將需要的OLED及傳導層沉積於,例如,如 先前分別對示於圖2B及2C之具體實例所説明之其上具有 蚀刻介電層之基材或其中具有蝕刻凹·洞之基材上而形成。 爲完成反轉高台、堆疊OLED裝置,應逆轉先前對圖2D所 示之具體實例所説明之成層順序。 本發明之其他具體實例係設計於集中光,以使效率最大 化及供高亮度用途用。此種發光物品各包括透明基材、在 基材上之光反射層、在反射層上呈導波層形式之光反射結 構、及在導波層上之至少,一個OLED,各OLED供預定顏 色之發光用°在光反射層中具有至少一個開口。自OLED -21 - ;---ί -1裝I------訂------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) Α4規格(210'乂 297公茇) A7 A7 經濟部中央榡芈局W3C工消費合作社印笨 五、發明説明(19) —-~ 發出之光經反射開導波層側壁及光反射層,以故其經引導 通過光反射層中之開口而透過基材發光。因此,由相當大 長度之OLED所產生之光集中成相當小的發光區域。其結 果爲高亮度、高解析度的發光裝置。 本發明之第四個具體實例示於圖7A及7B,其分別爲側 視圖及頂視圖。發光裝置1000包括基材u〇〇、光反射層 1110、導波層1120、及OLED層1130。在光反射屬ιη3〇 中具有至少一個開口 115〇,以使自OLED層1130發出之光 通過。在此具體實例中,導波層1120具有頂部表面、底部 表面、及至少三個側面。導波層1120之其中一個倒面2丨6〇 相對於基材1 1〇〇形成低於90。之角度,以約45。較佳。 導波層1 120之其餘側面實質上係垂直於基材11〇〇 ^反射 斋1 14 0在側面2 16 0上爲非必需,及以在導波層i丨2 〇之其 餘侧面上較佳。 在圖7A及7B所示之具體實例中,自〇LED層J η〇發出 之光在導波層1120内導波,在此其經反射開光反射層lu〇 及導波層1 120之側面,以致其經引導通過開口 U5〇。其 結果爲通過開口 1150及基材1100之集中光束。 雖然圖7A及7B所示之具體實例係描續成將光引導通過 基材1100,但本發明亦包括諸如圖7C所示之"反轉"形態 。在此一形態中,裝置係設置於其中具有凹洞之圖案基材 中’以致光係引導在遠離基材之方向上。如在此裝置中之 基材非反射性,則應在OLED 1130與基材丨1〇〇之間包括」 層反射性材料2 1 70。在圖案基材中之凹洞的深度可相當淺 ___ - 22 · 、張尺度適用中S國家榡準(CNS ) A4規格(210Χ297<^~Ρ ~~ --- ------„---裝ί------訂------線 (請先閒讀背面之注意事項再填巧本頁) A7 B7 五、發明説明(2〇 ) 經濟部中央標準局員工消費合作杜印製 ,在1000-3000埃左右,及視需要的寬。例如,圖案基対 U00係由其中具有由標準的方向蝕刻法所形成之凹洞=s 製成。 本發明之第五個具體實例示於圖8A及8B 。發光裝置 1010包括基材1100、光反射層1110、導波層112〇、= OLED層1 。導波層i 12〇之至少兩個側面wo相對於 基材成低於9G。之角度’以約3G。較佳,及其餘的侧面 垂直於基材。光反射層1110中具有設置在相對於基材成低 於90。肖度之導波層112〇之側面下方的開口。如圖μ所 不’自OLED層113〇發出之光在導波層112〇内導波,在此 其經反射開光反射層1110及導波層112〇之側面,以致並 經引導通過開口 1150。發光裝置1〇1〇視需要可包括反射 器1140以幫助自〇咖層U3〇發出之光的反射。自裝置 1010之開口 1150出來之光聚集於某個焦點12〇〇。 基材1100 —般係由透明材料,諸如玻璃、石英 '藍寶石 或塑膠製成。反射器1140例如爲金屬鏡或多層介電堆疊, 以後者爲較佳。如使用金屬鏡,則反射器1140係由任何適 當金屬或合金製成,以鋁、銀、鎂,合金、及其组合較佳 如使用多層介電堆疊,則反射層1140係由具有不同反射 率,任何介電材料對’諸如技藝中已知之T1〇jsi02製成 光射層1 1 10以由南度反射性的多層介電堆疊製成較 佳。 、::需:反射器1140 ,之需求係視使用作爲導波層mo 疋此材料係任何適當的透明介電材料,諸如Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives A7 B7 V. Description of the invention (18) 4) A blue OLED layer 20 is deposited. Layer 20 may be a SH or DH structure as previously explained. 5) Deposit conductive layers 26M and 261. 6) A green OLED layer 110 is deposited. The layer 110 may be a SH or DH structure as previously explained. 7) Deposit conductive layers 26M and 261. 8) Deposit the red OLED layer 1 1 1. Layers 11 to 11 may be SH or DH structures as previously explained. 9) Deposit conductive layers 26M and 261. After this step, the device looks like Figure 6C. 10) Reflectors 47 are deposited on the side walls of the platform, and connectors 26T are deposited on the layers 261. The final device looks like Figure 6D. Although FIG. 2D shows the use of stacked OLEDs in combination with a high platform structure, the present invention also considers the use of stacked OLEDs in an inverted high platform structure. This inverted platform structure is deposited by, for example, depositing the required OLED and conductive layer on, for example, a substrate with an etched dielectric layer thereon or an etched layer as described previously for the specific examples shown in FIGS. 2B and 2C, respectively. It is formed on a substrate of a recess or a hole. In order to complete the reversal of the high-level, stacked OLED device, the layering sequence previously described for the specific example shown in FIG. 2D should be reversed. Other embodiments of the present invention are designed to concentrate light to maximize efficiency and for high brightness applications. Such light-emitting articles each include a transparent substrate, a light reflecting layer on the substrate, a light reflecting structure in the form of a wave-guiding layer on the reflecting layer, and at least one OLED on the wave-guiding layer, each OLED for a predetermined color The light emitting layer has at least one opening in the light reflection layer. Since OLED -21-; --- -1 Pack I -------- Order ------ Line (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standards (CNS ) A4 specification (210 '乂 297mm) A7 A7 Central Government Bureau of the Ministry of Economic Affairs, W3C Industrial and Consumer Cooperatives, India Ben V. Invention Description (19) —- ~ The emitted light is reflected by the side walls of the guided wave layer and the light reflection layer. Therefore, it is guided through the opening in the light reflection layer to emit light through the substrate. Therefore, the light generated by the OLED of a relatively large length is concentrated into a relatively small light emitting area. The result is a light emitting device with high brightness and high resolution. A fourth specific example of the present invention is shown in Figs. 7A and 7B, which are a side view and a top view, respectively. The light emitting device 1000 includes a base material oo, a light reflection layer 1110, a wave guide layer 1120, and an OLED layer 1130. There is at least one opening 115 in the light-reflecting property 30 to allow light emitted from the OLED layer 1130 to pass through. In this specific example, the wave-guiding layer 1120 has a top surface, a bottom surface, and at least three sides. One of the inverted surfaces 21-6 of the wave-guiding layer 1120 is formed below 90 with respect to the substrate 1100. Angle to about 45. Better. The remaining side of the wave guide layer 1 120 is substantially perpendicular to the substrate 1 100. The reflection 1 14 0 is not necessary on the side 2 16 0 and is preferably on the remaining side of the wave guide layer i 丨 2 〇 . In the specific example shown in Figs. 7A and 7B, the light emitted from the OLED layer J η〇 is guided in the wave guide layer 1120, where it is reflected by the light reflection layer lu0 and the side of the wave guide layer 1 120, So that it is guided through the opening U50. The result is a concentrated beam passing through the opening 1150 and the substrate 1100. Although the specific example shown in FIGS. 7A and 7B is described as directing light through the substrate 1100, the present invention also includes a " reverse " form such as that shown in FIG. 7C. In this form, the device is disposed in a patterned substrate having a recess therein so that the light is guided in a direction away from the substrate. If the substrate in this device is non-reflective, a "layer of reflective material 2 1 70" should be included between the OLED 1130 and the substrate. The depth of the pits in the pattern substrate can be quite shallow ___-22 · The size of the sheet is applicable in the S country standard (CNS) A4 specification (210 × 297 < ^ ~ Ρ ~~ --- ------ …… --- Installed ------ Order ------ line (please read the precautions on the back before filling out this page) A7 B7 V. Description of Invention (2) Staff of Central Bureau of Standards, Ministry of Economic Affairs Consumption cooperation Du printed, about 1000-3000 angstroms, and as wide as necessary. For example, the pattern base 00U00 is made of a cavity = s formed by a standard directional etching method. The fifth of the present invention A specific example is shown in Figs. 8A and 8B. The light emitting device 1010 includes a substrate 1100, a light reflecting layer 1110, a wave guide layer 112, and an OLED layer 1. At least two side faces of the wave guide layer i 12o are opposite to the substrate. The angle is less than 9G. The angle is about 3G. It is better, and the other sides are perpendicular to the substrate. The light reflecting layer 1110 has a wave guide layer 112 of which is disposed at 90 degrees relative to the substrate. The opening below the side surface. As shown in Figure μ, the light emitted from the OLED layer 113〇 is guided in the wave guide layer 1120, where it is reflected to open the sides of the light reflection layer 1110 and the wave guide layer 1120. It is guided through the opening 1150. The light emitting device 1010 may include a reflector 1140 as needed to help reflect the light emitted from the U30 layer. The light coming out of the opening 1150 of the device 1010 is focused at a certain focal point 12 〇〇. The substrate 1100 is generally made of a transparent material, such as glass, quartz, sapphire, or plastic. The reflector 1140 is, for example, a metal mirror or a multilayer dielectric stack, and the latter is preferred. If a metal mirror is used, the reflection is The device 1140 is made of any suitable metal or alloy. It is preferably made of aluminum, silver, magnesium, alloys, and combinations thereof. If a multilayer dielectric stack is used, the reflective layer 1140 is made of any dielectric material with different reflectivity. For example, T10jsi02, which is known in the art, is used to make the light-transmitting layer 1 1 10, which is preferably made of a multilayer reflective dielectric stack that is highly reflective. Requirement: Reflector 1140, the need depends on the use as a wave-guiding layer mo 疋 This material is any suitable transparent dielectric material such as
.I I > ----Γ J — 裝 II (請先閲讀背面之注意事項再填寫本頁 y · • I I I . . H- n ----' n 經濟部中央標準局貝工消費合作社印製 A7 ____________ 五、發明説明(21 ) ' 永醯亞胺或鐵氟龍。最佳情沉爲衝擊於導波層1120之角 土上的光凡全反射,因而造成全内部反射。然而,如由於 使用作爲導波層丨丨2〇之材料以致無法獲致此情況,則需要 反射器1 140。例如,使用於導波層之材料及環繞導波層之 材料(或環境)將分別具有〜及n】之特性反射率。示於圖9 及足義成將發生全内部反射之最小角度的臨界角根據 万程式sm( Θ c)=(ni/n2)而與n2及〜相關,其中ηι<η2。因 此可以看到當導波層1120之反射率n2增加時,對低於〜 之疋値η丨,0 e減小β因此,當導波層丨12〇之反射率甚大 糸周圍材料(或環境)時,Θ c減至最小,以致更可能發生内 邶反射。在此情況,可能不需要反射器丨丨4〇。相反地,當 h與n!相似時,义。變得最大,以致内部反射變得較不可能 ’因此可能需要反射器114〇。 雖然反射器1140在圖中係示爲平而直的元件,但其可爲 不同形狀。例如,反射器1140之形狀可成曲線或抛物線, 以對衝擊光束具有聚焦效果。 爲使内郅損耗減至最小,導波層〖丨2〇應具有高於傳導層 15 00之反射率較佳。此外,導波層丨12〇之反射率應較基材 高,以避免光自導波層1120洩漏通過光反射層111〇而進 入基材1100。另外,本發明之發光裝置視需要可在傳導層 15 00下方包括低損耗、高反射率之介電材料,諸如no: 之層117〇。當傳導層丨500係由爲高損耗的材料IT◦製成 ,以致其可吸收自OLED,層1130發出之光時,層爲特 佳。Ti〇2及ITO之反射率分別大約爲2.6及2.2。層11 70 -24- 本紙伕尺度適用中國國家標準(CNS ) Λ4規格77^x297公楚) ------,----i^L------ΐτ------^ (請先閱讀背面之注意事項再填ft?本頁) A7 A7 經濟部中央標準局員工消費合作社印製 五、發明説明(22 ) 因此只資上地消除在ITO中之導波及吸收。雖然層H7〇之 反射率應大於層1500,但其應低於導波層112〇之反射率 ,以致發出的光可容易地自層117〇通過至層i 12〇。在降 低内部扣耗之又另一嘗試中,視需要可在開口丨15〇處設置 層低損耗、局反射率之介電材料丨丨9〇作爲抗反射塗料, 以促進光自導波層1120傳輸進入基材11〇〇中。層119〇亦 可設置在基材1100下方,如圖7A及8A所示。層1190例 如爲鐵氟龍。 在本發明之任何具體實例中,〇LED層1 1 3可爲如技藝 中已知之單一或雙重不均質結構形態的OLED。爲簡單起 見’在附圖中將本發明所使用之OLED示爲單層,即使如 OLED並非如技藝中已知之單層聚合物,而係各實際 上包括多個次層。此外,對操作〇LED層丨丨3需要數個電 極層,如圖10A-10C所示。 如圖10A所示,在OLED層1130頂部形成低工作函數( 以<4 eV較佳)的金屬層。金屬層之適當選擇包 括Mg、Mg/Ag、及Li/Al。金屬層1510提供作爲〇LED 層11j0之接觸材料及使衝擊光束反射的反射材料。沉積於 金屬層1510頂部者爲另一個適合於形成電接觸之傳導層 1520。傳導層1520係由,例如,IT〇 ' A1、Ag或Au製 成。當在傳導層15〇與傳導層152〇之間施加電壓時,光自 OLED 1130發出,因而造成自OLED層1130之EL的發光 。視需要可包括一層磷光體1160,以使自OLED發光層發 出之光能低向變頻至期望顏色。圖1 0 A所示之具體奇例將 ______-25- 本纸張尺度適用中國國家標準(CNS ) Λ4規格(210 X297公趁) ------ ------、1τ------^ (讀先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局負工消費合作社印絜 Λ7 ------- _ B7 五 '發明説明(23) 產生單色發光。.II > ---- Γ J — 装 II (Please read the notes on the back before filling out this page y · • III.. H- n ---- 'n Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs System A7 ____________ V. Description of the invention (21) 'Permanent imine or Teflon. The best feeling is the total reflection of light impinging on the corner soil of the wave guide layer 1120, which causes total internal reflection. However, such as Because the material used as the wave guide layer 丨 20 cannot be obtained, the reflector 1 140 is required. For example, the material used for the wave guide layer and the material (or environment) surrounding the wave guide layer will have ~ and n] characteristic reflectivity. It is shown in Fig. 9 and the critical angle of the minimum angle at which Ashikari will generate total internal reflection is related to n2 and ~ according to the equation sm (Θc) = (ni / n2), where η < η2 Therefore, it can be seen that when the reflectance n2 of the wave-guiding layer 1120 increases, 0 e decreases β for 疋 値 η 丨 below ~. Therefore, when the reflectivity of the wave-guiding layer 12o is very large, the surrounding material (or Environment), Θ c is minimized so that intrinsic reflection is more likely to occur. In this case, it may not be necessary Reflector 4o. Conversely, when h is similar to n !, it becomes the largest, so that internal reflection becomes less likely ', so reflector 114 may be needed. Although reflector 1140 is shown in the figure It is a flat and straight element, but it can have different shapes. For example, the shape of the reflector 1140 can be curved or parabolic to have a focusing effect on the shock beam. In order to minimize the intrinsic loss, the waveguide layer 〖丨 2 〇 should have a better reflectance than the conductive layer 15 00. In addition, the wave guide layer 丨 12 should have a higher reflectance than the substrate to avoid light from the light guide layer 1120 leaking through the light reflecting layer 111 and entering the base 1100. In addition, the light-emitting device of the present invention may include a low-loss, high-reflectivity dielectric material, such as a layer 117, under the conductive layer 1500. When the conductive layer 丨 500 is high-loss The material is made of IT◦, so that it can absorb the light emitted from OLED, layer 1130, the layer is particularly good. The reflectivity of Ti0 2 and ITO are about 2.6 and 2.2, respectively. Layer 11 70 -24- This paper is suitable for standard China National Standard (CNS) Λ4 Specification 77 ^ x297 Gongchu) ------, ---- i ^ L ------ ΐτ ------ ^ (Please read the notes on the back before filling in ft? This page) A7 A7 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ) Therefore, it is necessary to eliminate the guided wave and absorption in ITO. Although the reflectance of layer H7〇 should be greater than that of layer 1500, it should be lower than the reflectance of wave-guiding layer 1120 so that the emitted light can easily pass from layer 1170 to layer i 120. In another attempt to reduce internal depletion, a layer of low-loss, local-reflective dielectric material can be placed at the opening as required, as an anti-reflection coating, to promote the optical self-guided layer 1120. Transported into substrate 1 100. The layer 119〇 may also be disposed under the substrate 1100, as shown in FIGS. 7A and 8A. The layer 1190 is, for example, Teflon. In any specific example of the present invention, the OLED layer 1 13 may be an OLED with a single or double heterogeneous structure as known in the art. For the sake of simplicity, the OLED used in the present invention is shown as a single layer in the drawings, even if the OLED is not a single-layer polymer as known in the art, each actually includes a plurality of sublayers. In addition, for the operation of the LED layer 3, several electrode layers are required, as shown in FIGS. 10A-10C. As shown in FIG. 10A, a metal layer with a low work function (preferably < 4 eV) is formed on top of the OLED layer 1130. Suitable choices of metal layers include Mg, Mg / Ag, and Li / Al. The metal layer 1510 is provided as a contact material of the OLED layer 11j0 and a reflective material that reflects the impact beam. Deposited on top of the metal layer 1510 is another conductive layer 1520 suitable for forming electrical contact. The conductive layer 1520 is made of, for example, IT0 'Al, Ag, or Au. When a voltage is applied between the conductive layer 15 and the conductive layer 1520, light is emitted from the OLED 1130, thereby causing the EL of the OLED layer 1130 to emit light. Optionally, a layer of phosphor 1160 may be included to convert the light energy emitted from the OLED light emitting layer to a desired color in a low direction. The specific singularity shown in Figure 10 A will be ______- 25- This paper size applies the Chinese National Standard (CNS) Λ4 specification (210 X297) while taking advantage of ------ ------, 1τ- ----- ^ (Read the precautions on the back before filling out this page) Seal of the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 絜 Λ7 ------- _ B7 Five 'Invention Description (23) Monochrome Glow.
或者,爲有助於多色應用,OLED層1130包括如圖10BAlternatively, to facilitate multi-color applications, the OLED layer 1130 includes
所示之藍色OLED 1600、綠色〇lED 1610、及紅色〇LED 1620。各藍、綠、及紅色〇lED可個別编址,以分別獨立 發出藍、綠、及紅色光。 另一種方式爲將藍、綠及紅色OLED設置成如圖1 〇c所 示之堆疊形態。此一堆疊配置説明於丨994年12月13曰提 出申请之共同申請中的美國申請案08/354,674,及1995年 12月6曰提出申請之PCT國際申請案公告第W0 96/19792 號’將其揭示内容併入本文爲參考資料。在圖1〇c所示之 具體實例中,藍1600、綠1610及紅色1620 OLED —個堆 #於另一個之上’各OLED由層1 5 1 0及1520彼此分隔開, 以使各裝置可接受個別的偏壓位能而經由堆疊發光。在此 具體實例中,設置於OLED材料之間(例如在層1 600及1 6 1 0 之間,及在層1010及162〇之間)的金屬層152〇夠薄以成爲 透明,及在紅色OLED 1 620頂端爲裝置中之最頂部之傳導 層的金屬層1520夠厚以反射衝擊光束。各〇leD 1600、 1610及1620可爲如先前所説明之Sh或DH類型。如圖10C 所示,OLED 1600、1610及1620之堆疊配置係設置於傳 導層1500上。 以上所列之任何方法及材料的沉積技術係技藝中所熟知 。例如,沉積OLED層之較佳方法係藉由熱蒸發或旋轉塗 r 布;沉積金屬層之較佳方,法係藉由熱或電子束蒸發或濺鍍 :沉積ITO之較佳方法係藉由電子束蒸發或濺鍍;沉積磷 -26- 本紙張尺度適用中國國表標準(CNS ) A4規格(210X 297公犮) <---------ΐτ------.^ (請先閱讀背面之注意事項再填寫本頁) -濟部中夬梯準局員工消費合作社印裂 A7 B7 五、發明説明(24) 光體層之較佳方法係藉由熱蒸發或濺鍍;及沉積電介質之 較佳方法係藉由電漿增進化學蒸氣沉積或電子束蒸發。 利用光反射層11 1 0之本發明具體實例的顯著優點爲相 當大長度之OLED所產生之光集中成相當小的發光區域。 其結果爲高亮度、高解析度的發光裝置。隨著本發明之各 裝置之長度L的增加,預期裝置之效率將增加至達到某個 最適長度(Lopt),高於此長度裝置内之損耗將變得顯著,及 效率因此而降低。此現象以圖示於圖1 1。如此,示於圖8 在光反射層1110中具有兩個開口 U5〇,並將光束會聚至 焦點1 200之具體實例,一般爲圖7所示之具體實例的兩倍 亮。圖8所示之具體實例因此可爲圖7所示具體實例之一 半長度,但仍具有相同的所得光強度。 由利用光反射層1 1 10之本發明具體實例所得的高亮度 1光使此等裝置可有效供乾式影印、複印、印刷及顯示應 用以及任何其他此等需要高亮度、單色或多色發光之應用 使用。根據應用,可單獨或以多數像元使用如圖所示及説 明之具體實例。例如,在使用本發明於形成包含多個像元 之平面巡線顯示裝置之情況下,如此處所説明之各發光裝 置可代表個別像元或其部分。 可使用於本發明之任何具體實例之藍色發光。LED之金 屬雙配位基錯合物具有MDL42之化學式,其中^係選自週 期表之第3-Π族的三價金屬及鑭系元素。較佳的金屬離子 爲Al 3、G〆、In’W3。D爲雙配位基配位子,諸如 2如甲基酮、2_喳哪咬基鲷及2_(鄰苯 心酮。較 ___-____ -2Ί - (cNiTX^i~f2-10x297^y (請先閱讀背面之注意事項再填寫本頁)The blue OLED 1600, the green OLED 1610, and the red OLED 1620 are shown. Each blue, green, and red OLED can be individually addressed to independently emit blue, green, and red light. Another way is to set the blue, green and red OLEDs in a stacked configuration as shown in Fig. 10c. This stack configuration is described in US Application 08 / 354,674 in the joint application filed on December 13, 994, and PCT International Application Publication No. WO 96/19792, filed on December 6, 1995. Its disclosure is incorporated herein by reference. In the specific example shown in FIG. 10c, the blue 1600, green 1610, and red 1620 OLEDs are stacked on top of each other. Each OLED is separated from each other by layers 1 5 10 and 1520, so that each device Individual bias potentials can be accepted to emit light through the stack. In this specific example, the metal layer 1520 disposed between the OLED materials (eg, between layers 1 600 and 16 10, and between layers 1010 and 1620) is thin enough to become transparent, and in red The metal layer 1520 at the top of the OLED 1 620, which is the topmost conductive layer in the device, is thick enough to reflect the impact beam. Each OleD 1600, 1610, and 1620 may be of the Sh or DH type as previously explained. As shown in FIG. 10C, the stacked configurations of the OLEDs 1600, 1610, and 1620 are disposed on the conductive layer 1500. Any of the methods and materials listed above are well known in the art. For example, the preferred method of depositing the OLED layer is by thermal evaporation or spin coating; the preferred method of depositing the metal layer is by thermal or electron beam evaporation or sputtering: the preferred method of depositing ITO is by E-beam evaporation or sputtering; deposited phosphorus-26- This paper size applies to China National Standard (CNS) A4 specification (210X 297 cm) < --------- ΐτ ------. ^ (Please read the precautions on the back before filling out this page)-Printing of A7 B7 by the Consumer Cooperatives of the Ministry of Economic Affairs of the Ministry of Economic Affairs of the People's Republic of China V. Description of the Invention (24) The best method for the light body layer is by thermal evaporation or sputtering And a preferred method of depositing the dielectric is to promote chemical vapor deposition or electron beam evaporation by plasma. A significant advantage of the specific embodiment of the invention using the light reflecting layer 11 1 0 is that the light generated by a relatively large OLED is concentrated into a relatively small light emitting area. The result is a light emitting device with high brightness and high resolution. As the length L of each device of the present invention is increased, it is expected that the efficiency of the device will increase to reach a certain optimal length (Lopt), the loss in the device above this length will become significant, and the efficiency will decrease accordingly. This phenomenon is illustrated in FIG. 11. Thus, the specific example shown in FIG. 8 having two openings U50 in the light reflecting layer 1110 and converging the light beam to the focal point 1 200 is generally twice as bright as the specific example shown in FIG. 7. The specific example shown in Fig. 8 can therefore be one-half the length of the specific example shown in Fig. 7, but still have the same resulting light intensity. The high brightness 1 light obtained from specific examples of the present invention utilizing the light reflecting layer 1 1 10 enables these devices to be effectively used for dry photocopying, copying, printing and display applications and any other such applications that require high brightness, monochrome or multicolor light emission Its application. Depending on the application, the specific examples shown and described can be used alone or in a large number of pixels. For example, in the case where the present invention is used to form a flat line following display device including a plurality of picture elements, each light emitting device as described herein may represent an individual picture element or a part thereof. Blue light can be used for any specific example of the invention. The metal double-ligand complex of LED has the chemical formula of MDL42, where ^ is a trivalent metal and a lanthanide element selected from Group 3-Π of the periodic table. Preferred metal ions are Al3, G〆, In'W3. D is a double-ligand ligand, such as 2 such as methyl ketone, 2_zonabityl snapper, and 2_ (o-benzophenone. Compared to ___-____ -2Ί-(cNiTX ^ i ~ f2-10x297 ^ y (Please read the notes on the back before filling this page)
五、發明説明(25) A7 B7 經濟部中央桴準局員工消費合作社印袈 佳的L基團包括乙酶丙嗣根,化學式〇r3r之化合物,其 中R3係選自S i及c ’及r係選自氫、被取代及未被取代的 烷基、芳基及雜環基團;3,%二_(第三丁基)酚;2,6-二-( 第二丁基)Sb ’ 2,6-二-(第三丁基)甲驗;及{^28?22。舉例 來説’由測量在(吡啶甲基曱基酮)雙[2,6_二_(第三丁基)苯 氧化]铭之固悲中之光子激發光而得的波長爲420毫微米。 此化合物之甲酚衍生物亦經測量爲42〇毫微米。(吡啶甲基 甲基酮)雙(OsiPh3)鋁及(4-甲氧-吡啶甲基甲基酮)雙(乙醯 丙酮)銃各測得爲433毫微米,同時[2-(鄰苯氧基)吡啶]雙 [2,6-二-(第三丁基)苯氧化]鋁經測量爲450毫微米。 綠色0LED發光材料之例子包括錫(iv)金屬錯合物,諸如 彼等具有化學式SnL1〗L22者,其中L1係選自水楊醛、水楊 酸或氫醌鹽(例如8-羥基喹啉)。l2可爲被取代及未被取代 的技基、芳基及雜環基團。例如,當L1爲氫酿鹽及L2爲苯 基時,錫(iv)金屬錯合物將具有504毫微米之發光波長。 紅色0LED發光材料之例子包括二價金屬順丁烯二醯腈 二硫醇("mnt")錯合物,諸如彼等由c. E. Johnson等人説明 於發光録 (I)、錢(I)、及銘(Π)二硫醇鹽錯合物(Luminescent Iridium(I)、Rhodium(I)、and Platinum(II) Dithiolate Complexes" > 105 美國化學學會期刊 n〇ljrna1 〇f the American Chemical Society) 1 795Π983)中者。例如,mnt [Pt(Pph3)2]具有652毫微米之特性波長發光。 1 技藝中已知其他的OL尽D材料(參見,例如,Tang等人 之美國專利第5,294,870號,標題爲"有機電激發光多色影 -28- 本紙伕尺度適用中國囡家標準(CNTS ) Λ4規格(2IOX297公釐) H ---* —^m —J*— luv n - J *-^1 I— - = An (讀先閱讀背面之注意事項再填寫本頁)V. Description of the invention (25) A7 B7 The L group of the India Consumer Goods Cooperative Consumer Cooperative of the Ministry of Economic Affairs of the People's Republic of China includes acetylase propionate and a compound of the formula 0r3r, where R3 is selected from the group consisting of Si and c 'and r Is selected from the group consisting of hydrogen, substituted and unsubstituted alkyl, aryl and heterocyclic groups; 3,% di- (third butyl) phenol; 2,6-di- (second butyl) Sb ' 2,6-di- (third butyl) formaldehyde test; and {^ 28? 22. For example, 'the wavelength obtained by measuring the photon excitation light in (pyridylmethylfluorenone) bis [2,6_di_ (third butyl) benzene oxidation] is 420 nm. The cresol derivative of this compound was also measured to be 42 nm. (Pyridylmethyl methyl ketone) bis (OsiPh3) aluminum and (4-methoxy-pyridylmethyl methyl ketone) bis (acetamidineacetone) 铳 each measured 433 nm, and [2- (o-phenoxy Yl) pyridine] bis [2,6-di- (third butyl) phenoxy] aluminum was measured to be 450 nm. Examples of green 0LED luminescent materials include tin (iv) metal complexes, such as those having the chemical formula SnL1〗 L22, where L1 is selected from salicylaldehyde, salicylic acid, or hydroquinone salts (eg, 8-hydroxyquinoline) . l2 may be substituted or unsubstituted technical, aryl and heterocyclic groups. For example, when L1 is a hydrogen salt and L2 is a phenyl group, the tin (iv) metal complex will have an emission wavelength of 504 nm. Examples of red 0LED luminescent materials include the divalent metal cis-butene difluorene nitrile dithiol (" mnt ") complexes, such as those described by C. E. Johnson et al. In Luminescence Record (I), Qian ( I), and Ming (Π) dithiolate complex (Luminescent Iridium (I), Rhodium (I), and Platinum (II) Dithiolate Complexes " > 105 American Chemical Society Journal no.ljrna1 〇f the American Chemical Society) 1 795Π983). For example, mnt [Pt (Pph3) 2] emits light with a characteristic wavelength of 652 nm. 1 Other OL materials are known in the art (see, for example, U.S. Patent No. 5,294,870 to Tang et al., Entitled " Organic Electrically Excited Light Multicolor Shadow-28- This paper is based on Chinese standards (CNTS) ) Λ4 specification (2IOX297 mm) H --- * — ^ m —J * — luv n-J *-^ 1 I—-= An (Read the precautions on the back before filling this page)
*1T 線---- • II 1 I f — · .·- .1. » . A7 B7 五、發明説明(26) 像顯示裝置(Organic Electroluminescent Multicolor Image Display Device)" : Hosokawa等人,"自具有新摻雜劑之二 苯乙烯基伸芳基發光層之具高度效率的藍色電激發光 (Highly efficient blue electroluminescence from a distyrylarylene emitting layer with a new dopant” 67 應用物 理函件(Applied Physics Letters)3853-55(1995 年 12 月); Adachi等人,”藍色發光有機電激發光裝置(Blue light-emitting organic electroluminescent devices)"56 應用 物理函 f799-80 1( 1990年2月);Burrows等人,"可調色的有機發 光裝置(Color-Tunable Organic Light Emitting Devices)", 69應用物理函件2959-61(1996年11月))。將此等參考文獻 之全邵揭示内容併入本文爲參考資料。二苯乙缔基伸芳基 衍生物’諸如説明於Hosokawa等人中者,爲較佳的化合物 種類。 經濟部中央標準局員工消費合作社印" 1------ I - - - I- (if - n* i-.i -*·! (請先閱讀背面之注意事項再填寫本頁) 訂 使用於本發明之紅色及綠色發光螢光介質係技藝中所熟 知。揭7F内容併入本文爲參考資料之美國專利第4,769,292 及5,294,870號係爲説明。此等螢光染料可溶解於諸如聚甲 基丙烯酸甲酯之母體聚合物中,及許多適當的染料一開始 係發展供塑膠雷射用。紅色螢光染料之例子爲4_二氰基亞 甲基-4H-哌喃及4_二氰基亞甲基_4[1_硫基哌喃。綠色螢光 染料之例子包括聚次甲基染料,諸如花青、部花青及三、 四、及多核花青及部花青、氧醇(〇x〇n〇ls)、半氧醇, (henuoxanoh)、苯乙烯基、部苯乙烯基及鏈花青。 , 本發明I裝置提供任何尺寸之低成本、高解析度、高亮* 1T line ---- • II 1 I f — ·. ·-.1. ». A7 B7 V. Description of Invention (26) Organic Electroluminescent Multicolor Image Display Device ": Hosokawa et al. & Quot Highly efficient blue electroluminescence from a distyrylarylene emitting layer with a new dopant from a stilbene-based arylide emitting layer with a new dopant 67 Applied Physics Letters 3853-55 (December 1995); Adachi et al., "Blue light-emitting organic electroluminescent devices" " 56 Applied Physics Letter f799-80 1 (February 1990); Burrows Et al., "Color-Tunable Organic Light Emitting Devices", 69 Applied Physics Letter 2959-61 (November 1996)). The full disclosure of these references is incorporated herein by reference. Diphenylethenyl arylidene derivatives', such as those described in Hosokawa et al., Are preferred compounds. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs " 1 ------ I---I- (if-n * i-.i-* ·! (Please read the precautions on the back before filling out this page) The red and green light-emitting fluorescent mediums intended for use in the present invention are well known in the art. U.S. Patent Nos. 4,769,292 and 5,294,870, the contents of which are incorporated herein by reference, are illustrative. These fluorescent dyes are soluble in polymers such as Among the parent polymers of methyl methacrylate, and many suitable dyes were originally developed for plastic lasers. Examples of red fluorescent dyes are 4_dicyanomethylene-4H-piran and 4_di Cyanomethylene_4 [1_thiopiperan. Examples of green fluorescent dyes include polymethine dyes such as cyanine, merocyanine and tri-, tetra-, and polynuclear cyanine and merocyanine, oxygen Alcohols (oxonols), hexoxanols (henuoxanoh), styryl, mestyrenyl, and cyanine. The I device of the present invention provides low cost, high resolution, and high brightness in any size.
A7 B7 五、發明説明(27 ) 又、單色或?色的平面顯示。此將本發明之範圍擴大至包 括小至數毫米之顯示至大至建築物之尺寸。在顯示上所產 影像可爲全色的主題或説明,根據個別LED之尺寸而 爲任何解析度。本發明之裝置因此而適合於極度寬廣的應 用,其包括電子顯示、雷射、照明裝置、及使用於廣告板 和招牌之顯示裝置、電腦監視器、電信裝置諸如電話、電 視'大面積的牆壁螢幕、戲院螢幕及運動場螢幕,比方説 °將發出之光引導在遠離基材方向上之本發明的具體實例 對於乾式影印用途特別有用,由於此具體實例可容許緊密 的定位至印刷紙張,而不使用鏡片。 熟悉技藝人士可辨認對描述及説明於此之本發明具體實 例的各種修改。此等修改係意圖由隨附之申請專利範圍的 精神及範圍所涵蓋。 .裝l· — (請先閲讀背面之注意事項再填寫本頁)A7 B7 V. Description of the invention (27) Or monochrome or? Colored flat display. This extends the scope of the invention to include displays as small as a few millimeters and as large as buildings. The image produced on the display can be a full color theme or description, with any resolution depending on the size of the individual LED. The device of the present invention is therefore suitable for extremely wide applications, including electronic displays, lasers, lighting devices, and display devices for advertising boards and signboards, computer monitors, telecommunications devices such as telephones, televisions, and large walls Screens, theater screens, and stadium screens, for example, ° The specific example of the invention that directs the emitted light away from the substrate is particularly useful for dry photocopying applications, as this specific example allows tight positioning to the printing paper without Use lenses. Those skilled in the art will recognize various modifications to the specific examples of the invention described and illustrated herein. These modifications are intended to be covered by the spirit and scope of the accompanying patentable scope. . 装 l · — (Please read the notes on the back before filling this page)
.1T 經濟部中央標準局員工消費合作社印製 -30- 本纸張尺度適用中國园家標準(CNS ) Λ4規格(210X 297公釐).1T Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -30- This paper size applies to the China Garden Standard (CNS) Λ4 specification (210X 297 mm)
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US08/772,332 US5834893A (en) | 1996-12-23 | 1996-12-23 | High efficiency organic light emitting devices with light directing structures |
US08/774,119 US6046543A (en) | 1996-12-23 | 1996-12-23 | High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
US08/794,595 US6091195A (en) | 1997-02-03 | 1997-02-03 | Displays having mesa pixel configuration |
US08/844,353 US6125226A (en) | 1997-04-18 | 1997-04-18 | Light emitting devices having high brightness |
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AU (1) | AU5621598A (en) |
CA (1) | CA2275514A1 (en) |
DE (1) | DE69732713T2 (en) |
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EP0956741B1 (en) | 2005-03-09 |
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