經濟部中央標準局員工消費合作社印製 3387twf.doc/008 A7 _____B7 _ 五、發明説明（（） 本發明是有關於一種爐管的控溫方法，且特別是有關 於一種在晶片送入爐管和晶片送出爐管時，控制晶片周圍 溫度的方法。 一般而言，晶片的薄膜沈積都是多是利用高溫爐管來 進行的。從送入爐管開始，到沈積結束，送出爐管之間， 晶片經歷許多不同的溫度。這些溫差會使得晶片裡的每— 層薄膜所承受的機械應力發生變化。爲了防止這些薄膜因 累積過多的應力而產生永久的機械性破壞，例如薄膜剝離 或龜裂’晶片周圍溫度的控制就顯得非常重要，以避免製 程的良率(Yield)受到影響。 現在大多數的爐管，都具有溫度分佈熱電偶和針形熱 電偶等兩種控溫裝置。請篸照第1 .圖，其所繪示爲一爐管 式低壓化學氣相沈積（Low Pressure Chemical Vapor Deposition ;以下簡稱LPCVD)系統之爐管示意圖，其中’ 溫度分佈熱電偶103位於爐管1〇〇內部，用以測量並控制 管內五個不问區域120、121、130、131、140的溫度；而 針开熱電偶10 5則位於爐管10 〇外部，可測量並控制爐管 100的管壁溫度。 第2圖繪示在爐管進行反應之前，溫度分佈熱電偶測 得管內各個區域之溫度與時間的分佈圖，其橫軸爲時間， 而其縱軸爲溫度，單位爲。C。請同時參照第1圖和第2圖， 其中，第一時間係指打開爐門110的時間，此第—時間未 繪不於第二圖之橫軸。而第2圖圖中橫軸之第二時間t2係 指開始將晶片送入爐管100的時間，第三時間則指晶片經 3 氏張尺度適用中國國家標準（CNS ) A4規格Y2IOX 297公楚1 ---- (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 3387twf.doc / 008 A7 _____B7 _ V. Description of the Invention (() The present invention relates to a method for controlling the temperature of a furnace tube, and in particular to a method of feeding a furnace tube into a wafer And the method of controlling the temperature around the wafer when the wafer is sent out of the furnace tube. Generally speaking, the thin film deposition of wafers is mostly performed by the high temperature furnace tube. From the beginning of the feeding of the furnace tube to the end of the deposition, it is sent out of the furnace tube. The wafer experiences many different temperatures. These temperature differences will change the mechanical stress experienced by each layer of film in the wafer. In order to prevent these films from permanent mechanical damage due to accumulated excessive stress, such as film peeling or cracking 'The control of the temperature around the wafer is very important to prevent the yield of the process from being affected. Most furnace tubes now have two temperature control devices, such as temperature distribution thermocouples and needle thermocouples. Please 篸According to Fig. 1, it is shown as a furnace tube low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition; hereinafter referred to as LPCVD) system Schematic diagram of the furnace tube, in which the 'temperature distribution thermocouple 103' is located inside the furnace tube 100, which is used to measure and control the temperature of the five independent regions 120, 121, 130, 131, 140 in the tube; It is located outside the furnace tube 100, and can measure and control the wall temperature of the furnace tube 100. Figure 2 shows the temperature and time distribution of the temperature in each area of the tube measured by the temperature distribution thermocouple before the furnace tube reacts. The horizontal axis is time, and the vertical axis is temperature. The unit is C. Please refer to Figure 1 and Figure 2 at the same time, where the first time refers to the time when the furnace door 110 is opened. This first time is not shown. The horizontal axis on the second graph. The second time t2 on the horizontal axis in the second graph refers to the time when the wafer is started to be sent into the furnace tube 100, and the third time refers to the wafer's application of the Chinese standard (3 ° scale). CNS) A4 specification Y2IOX 297 male Chu 1 ---- (Please read the precautions on the back before filling this page)
經濟部中央標準局員工消費合作社印製 33S7twf.d〇c/008 A - A7 ___ _B7___ 五、發明説明（> ) 過中途區域130的時間，第四時間則指晶片到達沈積區域 140之時間。 請繼續參照第2圖，當從開始送入晶片的第二時間t2， 到晶片經過中途區域的第三時間t3之間，爐管內各區域溫 度120a、121a、130a、131a、140a均有大幅流失，以曲線 l2la爲例，它代表區域1U之溫度，其由68〇°C左右降至 550°C左右，降幅在100°C以上。這種溫度的流失，必須在 第三時間t3至晶片到達沈積區域'的第四時間t4之間，回 溫加以彌補'。換句話說，晶片從開始送入爐管，至到達沈 積區域140的過程中，須歷經相當程度的溫差變化。這些 溫差會使得晶片裡的每一層薄膜所承受的機械應力發生變 化’而產生薄膜剝離或龜裂等影響良率的現象。 再者，請繼續參照第1圖和第2圖，可得知爐管100 內各區域120、121、130、131、140的溫度並不相同。一 般而言，靠近爐門110的區域的溫度較接近爐管100內部 沈積區域14〇的溫度爲低，因此在輸送晶片的過程中，晶 片將從靠近爐門110的低溫環境，輸送至靠近沈積區域140 的高溫環境。此時輸送速度的調整就顯得相當重要，因爲 太快的輸送速度，將使得晶片經歷過快的溫度變化，同樣 會對晶片造成破壞，影響製程的良率。 第3圖繪示一習知之爐管式LPCVD系統之爐管操作方 法流程圖’用以分析習知之操作方法如何造成上述溫差變 化的缺失。 請同時參照第1圖和第3圖，首先，實施步驟200，調 4 ( CNS ) ( 210X297/^ j " " (請先閲讀背面之注意事項再填寫本頁) J.---_-------裝. 經濟部中央標準局員工消費合作社印製 3387twf.doc/008 A 7 _____B7 五、發明説明（^ ) 整氮氣流量，約爲24 l/min。在打開爐門n〇，準備送入晶 片之前，須先藉由進氣管1〇1通入反應所需的氣體，例如 氮氣。這個氮氣的流量是相當重要的，因爲爐管100管內 溫度之所以會大幅流失，主要是由於爐門110打開後，髙 溫氣體自爐門11〇流出管外的緣故；而太大的氮氣流量， 將促使這種氣體流失更加劇烈，導致更大幅度的溫度流 失。 接著，實施步驟31〇，在爐門110打開之第一時間，進 行第一溫控調整，使用針形熱電偶105控制爐管溫度。 接著，實施步驟320 ’在開始送入晶片之第二時間，進 ί了第二溫控調整，並調整輸送速度，約爲100 mm/min。輸 送速度的重要性，前面已經提及，於此不在贅述，而第二 溫控調整係指繼續使用針形熱電偶1〇5控制爐管溫度。 値得一提的是，針形熱電偶105僅能量控爐管1〇〇的 管壁溫度。然而，爐管1〇〇的管內溫度和管壁溫度並不相 同，因爲爐管100內壁往往會有反應雜質沈積，使得兩者 的溫度會有差異。若如習知一般，僅利用針形熱電偶105 控溫，無法確實反應爐管100管內的真正溫度，特別在有 管內溫度大幅流失時，這種差異尤其明顯。 接著，實施步驟330，在晶片經過中途區域130之第三 時間，進行第三溫控調整，改用溫度分佈熱電偶103來控 制管內溫度。由於習知方法在前述步驟中，未能對溫度流 失做良好的控制，使得在實施本步驟330時，必須透過大 量的加熱來彌補溫度.，將其提高至反應所需之高溫。 5 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） I 7^·裝 . "訂 束 ^ * „ Γ ‘ ' (請先閱讀背面之注意事項再填寫本頁) 、 33 8 7twf.doc/008 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明（A ) 最後，實施步驟340，當晶片到達沈積區域14〇之後， 關閉爐門110 ’進行晶片之化學氣相沈積。 綜上所述，可以得知在晶片送入爐管的時候，影響晶 片周圍溫度的操作條件包括： " 1·氮氣流量的調整；, 2. 溫控方式的調整；以及 3. 晶片輸速的調整。 因此，本發明的主要目的’就是提供一種爐管的控溫 方法，適用於晶片送入或送出爐管的過程。在過程中，適 當改變爐管的操作條件，可以降低爐管溫度流失的程度， 減少晶片周圍溫度的變化，進而防止晶片破損，改善製程 品質。 根據本發明的目的，提出一種利用爐管操作條件的改 進，以控制爐管溫度的方法，藉以改善晶片製程的品質， 其方法簡述如下： 調整較小之氮氣流量，適當調配針形熱電偶和溫度分 佈熱電偶的使用，和調整較小之輸送速度。透過三種操作 條件的改善，可減少晶片在送入爐管的過程中，周圍溫度 的變化，以提高晶片製程的品質。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作曰羊 細說明如下： 圖式之簡單說明： 第1圖繪示一爐管式LPCVD系統之爐管.示意圖。 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 33S7twf.doc / 008 A-A7 _ _B7___ V. Description of the invention (>) The time passed by the midway area 130, and the fourth time is the time when the wafer reaches the deposition area 140. Please continue to refer to the second figure. Between the second time t2 when the wafer is started to be fed and the third time t3 when the wafer passes through the halfway area, the temperature in each area of the furnace tube is 120a, 121a, 130a, 131a, 140a. The loss, taking the curve l2la as an example, it represents the temperature of 1U in the region, which has dropped from about 68 ° C to about 550 ° C, and the decline is above 100 ° C. This temperature loss must be compensated by the return temperature between the third time t3 and the fourth time t4 when the wafer reaches the deposition area. In other words, the wafer must go through a considerable degree of temperature difference from the beginning to the furnace tube to the deposition area 140. These temperature differences will change the mechanical stress experienced by each layer of the thin film in the wafer ', which will cause film peeling or cracking to affect the yield. Furthermore, please continue to refer to FIG. 1 and FIG. 2, it can be seen that the temperatures of the regions 120, 121, 130, 131, and 140 in the furnace tube 100 are different. Generally speaking, the temperature of the area near the furnace door 110 is lower than that of the deposition area 14 inside the furnace tube 100. Therefore, during the wafer transfer process, the wafer will be transferred from the low temperature environment near the furnace door 110 to the deposition area. Area 140 high temperature environment. At this time, the adjustment of the conveying speed is very important, because too fast a conveying speed will cause the wafer to experience excessive temperature changes, which will also cause damage to the wafer and affect the yield of the process. Fig. 3 shows a flow chart of a furnace tube operation method of a conventional furnace tube type LPCVD system for analyzing how the conventional operation method causes the above-mentioned lack of temperature difference. Please refer to Figure 1 and Figure 3 at the same time. First, implement step 200 and adjust 4 (CNS) (210X297 / ^ j " " (Please read the precautions on the back before filling this page) J .---_ ------- Installation. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 3387twf.doc / 008 A 7 _____B7 V. Description of the invention (^) The total nitrogen flow rate is about 24 l / min. When the furnace door is opened n 〇, before preparing to send the wafer, the gas required for the reaction, such as nitrogen, must be passed through the inlet tube 101. The flow rate of this nitrogen is very important, because the temperature inside the furnace tube 100 will be greatly lost. The main reason is that after the furnace door 110 is opened, the warm temperature gas flows out of the tube from the furnace door 110, and the too large nitrogen flow will cause this gas loss to be more severe, resulting in a larger temperature loss. Perform step 31. At the first time when the furnace door 110 is opened, perform the first temperature control adjustment, and use the needle-shaped thermocouple 105 to control the furnace tube temperature. Next, perform step 320 ′ at the second time when the wafer feeding is started. ίThe second temperature control adjustment, and adjust the conveying speed, about 100 mm / min. The importance of the conveying speed has been mentioned before, so I won't go into details here, and the second temperature control adjustment refers to the continuous use of the needle thermocouple 105 to control the furnace tube temperature. It should be mentioned that the needle thermoelectric Even 105 can only control the wall temperature of the furnace tube 100. However, the tube temperature and the tube wall temperature of the furnace tube 100 are not the same, because the reaction wall of the furnace tube 100 tends to deposit reactive impurities. There will be differences in the temperature. If the temperature is controlled by using the needle-shaped thermocouple 105 only as it is known, the true temperature in the tube of the furnace tube 100 cannot be accurately determined, especially when there is a large loss of temperature in the tube. This difference is particularly obvious. Next, step 330 is performed to perform a third temperature control adjustment at a third time when the wafer passes through the mid-way area 130, and the temperature distribution thermocouple 103 is used to control the temperature in the tube. Because the conventional method fails to control the temperature in the foregoing steps, The loss is well controlled, so when implementing this step 330, the temperature must be compensated by a large amount of heating to increase it to the high temperature required for the reaction. 5 This paper size applies the Chinese National Standard (CNS) A4 specification 210 X 297 mm) I 7 ^ · pack. &Quot; Order bundle ^ * „Γ '' (Please read the notes on the back before filling in this page), 33 8 7twf.doc / 008 Α7 Β7 Central Bureau of Standards, Ministry of Economic Affairs Printed by the employee consumer cooperative V. Description of the invention (A) Finally, step 340 is implemented. After the wafer reaches the deposition area 1440, the furnace door 110 'is closed for chemical vapor deposition of the wafer. In summary, it can be known that When entering the furnace tube, the operating conditions that affect the temperature around the wafer include: " 1. Adjustment of nitrogen flow; 2. Adjustment of temperature control mode; and 3. Adjustment of wafer transmission speed. Therefore, the main object of the present invention is to provide a method for controlling the temperature of the furnace tube, which is suitable for the process of feeding wafers into or out of the furnace tube. During the process, proper changes to the operating conditions of the furnace tube can reduce the degree of temperature loss of the furnace tube, reduce changes in the temperature around the wafer, thereby preventing wafer damage and improving process quality. According to the purpose of the present invention, a method for controlling the temperature of the furnace tube by using the improvement of the operating conditions of the furnace tube is proposed to improve the quality of the wafer process. The method is briefly described as follows: Adjust the smaller nitrogen flow rate and appropriately configure the needle-shaped thermocouple. And the use of temperature distribution thermocouple, and adjust the smaller conveying speed. Through the improvement of the three operating conditions, the change of the surrounding temperature during the process of feeding the wafer into the furnace tube can be reduced to improve the quality of the wafer process. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description of the sheep as follows: Brief description of the drawings: Figure 1 shows the schematic diagram of the furnace tube of a furnace tube type LPCVD system. 6 This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)
C 裝· —1Τ--r 33 87twf.doc/008 A7 B7 五、發明説明u) 第2圖繪示一爐管管內各個區域之溫度與時間的分佈 圖。 第3圖繪示一習知之爐管式LPCVD系統之爐管操作方 法流程圖。 第4圖繪示依照本發明一較佳實施例的一種爐管式 LPCVD系統之爐管操作方法流程圖。 第5圖繪示實施本發明一較佳實施例之時，爐管管內 各個區域之溫度與時間的分佈圖。 圖式之標記說明： 100 :爐管 101 :進氣管 103 :溫度分佈熱電偶 105 :針形熱電偶 110 :爐門 130 :晶片輸送時經過之中途區域 140 :晶片作沈積時之區域 120、121、130、131、140 :晶片輸送過程經過的五個 不同區域 120a、121a、130a、131a、140a :習知方法中，五個不 问區域之溫度 120b、121b、130b、131b、140b :實施例中，五個不 同區域之溫度 t2 :開始送入晶片之第二時間 t3 :晶片經過中途區域130之第三時間 7 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -------；^裝— — 1 (請先聞讀背面之注意事項再，填寫本頁) 訂 經濟部中央標隼局員工消費合作杜印製 3387twf.doc/008 A7 B7 五、發明説明（4 ) t4:晶片到達沈積位岐第四時間 經濟部中央標準局員工消費合作社印製 實施例 第4圖繪示依照本龄日日 心明一較佳實施例的一種爐管式 LPCVD系統之爐管操作方法流程圖。 請同時參照第1圖和第 _ 4圖，首先，貫施步驟400，調 整氮氣流量’約爲5〜15 1/min。通人較小之氮氣流量，可 減緩後續爐門11G打開時，高溫氣體自爐門m流失的程 度，進而減少溫度流失的幅度。 接著，實施步驟410’在爐門11〇打開之第—時間，進 行第一內外溫控S周整，同時使用針形熱電偶1〇3和溫度分 佈熱電偶105控制爐管100溫度，此時針形熱電偶1〇3的 使用比例較大。 接著，實施步驟420，在開始送入晶片之第二時間，進 行第二內外溫控調整，並調整輸送速度，約爲3〇〜1〇〇 mm/min。此較小的輸送速度，可使得晶片從靠近爐門11〇 的低溫環境’輸送至靠近沈積區域140的高溫環境時，能 有足夠的時間和周圍達成溫度平衡，以避免過快的溫度變 化造成晶片破損。而第二溫控調整係指同時使用針形熱電 偶103和溫度分佈熱電偶1〇5控制爐管1〇〇溫度，此時兩 種熱電偶的使用比例相當。 特別注意的是，在打開爐門110之後，本發明方法立 即使用可量測控制管內溫度的溫度分佈熱電偶1 〇 5來控制 溫度，較能反應爐管1〇〇內部的真正溫度，以確實掌握爐 (請先閎讀势面之注C事項再填寫本頁) .0 裝. 訂 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） 3387twf.doc/008 A7 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明〇 ) 管100管內溫度流失的情形。 接著，實施步驟430，在晶片經過中途區域130之第三 時間，進行第三內外溫控調整，同時使用針形熱電偶103 和溫度分佈熱電偶105控制爐管100溫度，此時溫度分佈 熱電偶105的使用比例較大。 最後，實施步驟440，在晶片到達沈積區域丨4〇之後， 關閉爐門110，進行晶片之化學氣相沈積。 請參照第5圖，其所繪示爲實施本發明一較佳實施例 之時，爐管管內各個區域之溫度與時間的分佈圖。其中， 橫軸爲時間，而其縱軸爲溫度，單位爲。C。 請繼續參照第5圖，同時參照第1圖。其中，第二時 間t2、第三時間t3和第四時間t4之定義與習知相同。當 從第二時間t2，到第三時間t3之間，爐管100內各區域 120、121、130、131、140的溫度流失幅度已經減少。以 曲線mb爲例，它代表第1圖中區域121的溫度，其溫度 最低僅降至約600°C。因此，在後續的第三時間t3至第四 時間t4之間，僅需提供較少的加熱能量，即可將爐管100 溫度提昇回反應所需之高溫。換句話說，晶片從開始送入 爐管100，至到達沈積區域140的過程中，所歷經的溫養 變化已經減小，也就同時減少薄膜剝離或龜裂等影響良率 的現象。 再者，請繼續參照第1圖和第5圖，雖然爐管1〇0內 各區域U0、121、130、131、H0的溫度並不相同，但透 過本發明方法的控溫方式，已使得各區域的溫度差異縮 請 先 聞 ft 意 事 項C Installation · —1Τ—r 33 87twf.doc / 008 A7 B7 V. Description of the Invention u) Figure 2 shows the temperature and time distribution of each area in a furnace tube. Fig. 3 shows a flow chart of a conventional furnace tube operation method of a furnace tube type LPCVD system. FIG. 4 shows a flowchart of a furnace tube operation method of a furnace tube type LPCVD system according to a preferred embodiment of the present invention. Fig. 5 is a graph showing the temperature and time distribution of various regions in the furnace tube when a preferred embodiment of the present invention is implemented. Explanation of the marks of the drawings: 100: furnace tube 101: intake tube 103: temperature distribution thermocouple 105: needle-shaped thermocouple 110: furnace door 130: midway area during wafer transfer 140: area 120 during wafer deposition 121, 130, 131, 140: Five different areas 120a, 121a, 130a, 131a, 140a passed by the wafer transfer process: In the conventional method, the temperatures of the five areas 120b, 121b, 130b, 131b, 140b: Implementation In the example, the temperature t2 in five different areas: the second time t3 when the wafer starts to be fed: the third time the wafer passes through the mid-way area 130. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)- ----- ； ^ 装 — — 1 (Please read the precautions on the back before filling in this page) Order the consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs Du printed 3387twf.doc / 008 A7 B7 V. Description of the invention (4) t4: The fourth time the wafer arrives at the deposition position, printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. FIG. 4 shows a furnace tube LPCVD system according to a preferred embodiment of this age Flow chart of furnace tube operation method. Please refer to FIG. 1 and FIG. 4 at the same time. First, step 400 is performed to adjust the nitrogen flow rate ′ to about 5 to 15 1 / min. The small nitrogen flow can slow down the loss of high temperature gas from the furnace door m when the subsequent furnace door 11G is opened, thereby reducing the magnitude of temperature loss. Next, step 410 ′ is performed at the first time when the furnace door 11 is opened, and the first internal and external temperature control is performed. At the same time, the needle thermocouple 10 and the temperature distribution thermocouple 105 are used to control the temperature of the furnace tube 100. At this time, the needle The use ratio of the shape thermocouple 103 is large. Next, step 420 is performed. At the second time when the wafer feeding is started, the second internal and external temperature control adjustment is performed, and the conveying speed is adjusted to about 30 to 100 mm / min. This small transfer speed allows the wafer to be transported from a low-temperature environment close to the furnace door 11 to a high-temperature environment close to the deposition area 140, with sufficient time to reach a temperature equilibrium with the surroundings to avoid excessive temperature changes. The chip is broken. The second temperature control adjustment refers to the use of the needle-shaped thermocouple 103 and the temperature distribution thermocouple 105 to control the temperature of the furnace tube 100. At this time, the proportion of the two thermocouples is equivalent. In particular, after the furnace door 110 is opened, the method of the present invention uses a temperature distribution thermocouple 105 that can measure the temperature in the control tube to control the temperature, which can better reflect the true temperature inside the furnace tube 100. Be sure to master the furnace (please read the note C of the potential situation before filling out this page) .0 Pack. The size of the paper is applicable to Chinese national standards (CNS > A4 size (210X297 mm) 3387twf.doc / 008 A7 B7 Economy Printed by the Consumer Standards Cooperative of the Ministry of Standards of the Ministry of Foreign Affairs 5. Description of the invention 0) The situation of temperature loss in 100 tubes. Next, step 430 is performed to perform a third internal and external temperature control adjustment at the third time when the wafer passes through the mid-way area 130, and the temperature of the furnace tube 100 is controlled by using the needle thermocouple 103 and the temperature distribution thermocouple 105. At this time, the temperature distribution thermocouple The use ratio of 105 is large. Finally, step 440 is performed. After the wafer reaches the deposition area 400, the furnace door 110 is closed to perform chemical vapor deposition of the wafer. Please refer to FIG. 5, which shows the temperature and time distribution of each area in the furnace tube when a preferred embodiment of the present invention is implemented. Among them, the horizontal axis is time, and the vertical axis is temperature, and the unit is. C. Please continue to refer to Figure 5 and also refer to Figure 1. Among them, the definitions of the second time t2, the third time t3, and the fourth time t4 are the same as the conventional ones. From the second time t2 to the third time t3, the magnitude of the temperature loss in each area 120, 121, 130, 131, 140 of the furnace tube 100 has been reduced. Taking the curve mb as an example, it represents the temperature of the region 121 in the first figure, and the temperature drops to only about 600 ° C. Therefore, during the subsequent third time t3 to the fourth time t4, the temperature of the furnace tube 100 can be raised back to the high temperature required for the reaction by providing less heating energy. In other words, from the beginning of the wafer feeding to the furnace tube 100 to the deposition area 140, the temperature change experienced by the wafer has been reduced, which also reduces the yield and other phenomena that affect the yield. Furthermore, please continue to refer to FIG. 1 and FIG. 5. Although the temperatures of U0, 121, 130, 131, and H0 in each area of the furnace tube 100 are not the same, the temperature control method of the method of the present invention has made Please note the temperature difference before the temperature difference in each area shrinks
裝 # 訂 本紙張尺度適用中國國家標準（CNS ) A4规格（210 X 297公楚:） 3387twf.doc/008 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（X ) 小’如第5圖圖中的12〇b、121b、130b、131b、140b等曲 線所示。而且，本發明方法使用較小之輸送速度，使得晶 片在爐管100內移動時，有較充裕的時間和周圍達成溫度 平衡，以保護晶片，提高製程良率。 附帶一提的是，本發明方法不僅適用於晶片送入爐管 的過程’同時可適用於晶片送出爐管的過程，在過程中透· 過兩種熱電偶的同時調整，可使晶片在製程中達到更周延 的保護’避免其因溫差的變化而影響良率。 由上述本發明較佳實施例可知，應用本發明具有下列特 徵： 1. 本發明提出之調整較小的氮氣流量，有助於減緩爐 管高溫氣體的流出，降低爐管管內溫度流失的幅度。 2. 本發明提出之調整溫控方式，較能確實反應爐管之 管內溫度，達到良好的控溫效果。 3. 本發明提出調整較小的晶片輸速，有助於提供較多 的時間，讓晶片與周圍達成溫度平衡。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 10 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀¾面之注意事項再嗔寫本頁) 裝· —訂_装 # The paper size of the booklet applies the Chinese National Standard (CNS) A4 specification (210 X 297 Gongchu :) 3387twf.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention Description (X) Small 'such as The graphs such as 120b, 121b, 130b, 131b, and 140b in FIG. 5 are shown. Moreover, the method of the present invention uses a smaller conveying speed, so that when the wafer is moved in the furnace tube 100, there is more time to reach a temperature equilibrium with the surroundings to protect the wafer and improve the process yield. Incidentally, the method of the present invention is not only applicable to the process of feeding wafers into the furnace tube, but also applicable to the process of sending wafers out of the furnace tube. During the process, two types of thermocouples are adjusted at the same time, so that the wafer can be processed in the process. In order to achieve more cyclical protection 'to avoid its influence on yield due to changes in temperature difference. It can be known from the above-mentioned preferred embodiments of the present invention that the application of the present invention has the following characteristics: 1. The smaller nitrogen flow rate proposed by the present invention can help slow down the outflow of high temperature gas from the furnace tube and reduce the magnitude of temperature loss in the furnace tube. . 2. The temperature control method proposed in the present invention can more accurately reflect the temperature in the tube of the furnace tube and achieve a good temperature control effect. 3. The present invention proposes to adjust a smaller wafer transmission rate, which helps to provide more time for the wafer to reach a temperature equilibrium with the surroundings. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 10 This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) (Please read the notes on ¾ before writing this page)
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