TW376353B - Methods and apparatus for chemical mechanical planarization using a microreplicated surface - Google Patents

Methods and apparatus for chemical mechanical planarization using a microreplicated surface

Info

Publication number
TW376353B
TW376353B TW087110322A TW87110322A TW376353B TW 376353 B TW376353 B TW 376353B TW 087110322 A TW087110322 A TW 087110322A TW 87110322 A TW87110322 A TW 87110322A TW 376353 B TW376353 B TW 376353B
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
microreplicated surface
mechanical planarization
methods
increases
Prior art date
Application number
TW087110322A
Other languages
English (en)
Inventor
Stuart L Meyer
Original Assignee
Speedfam Ipec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Speedfam Ipec Corp filed Critical Speedfam Ipec Corp
Application granted granted Critical
Publication of TW376353B publication Critical patent/TW376353B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/762Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y10S977/765Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less with specified cross-sectional profile, e.g. belt-shaped
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775Nanosized powder or flake, e.g. nanosized catalyst
    • Y10S977/777Metallic powder or flake
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/882Assembling of separate components, e.g. by attaching
    • Y10S977/883Fluidic self-assembly, FSA
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/888Shaping or removal of materials, e.g. etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crushing And Grinding (AREA)
TW087110322A 1997-06-26 1998-07-31 Methods and apparatus for chemical mechanical planarization using a microreplicated surface TW376353B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/883,404 US6224465B1 (en) 1997-06-26 1997-06-26 Methods and apparatus for chemical mechanical planarization using a microreplicated surface

Publications (1)

Publication Number Publication Date
TW376353B true TW376353B (en) 1999-12-11

Family

ID=25382510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087110322A TW376353B (en) 1997-06-26 1998-07-31 Methods and apparatus for chemical mechanical planarization using a microreplicated surface

Country Status (4)

Country Link
US (2) US6224465B1 (zh)
JP (1) JP3078783B2 (zh)
DE (1) DE19828477A1 (zh)
TW (1) TW376353B (zh)

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US6224465B1 (en) * 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
CN1345264A (zh) * 1999-03-30 2002-04-17 株式会社尼康 抛光盘、抛光机、抛光方法及制造半导体器件的方法
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
US6280288B1 (en) * 2000-02-04 2001-08-28 Norton Company Process for determining optimum grinding conditions
JP2002141315A (ja) * 2000-11-02 2002-05-17 Hitachi Chem Co Ltd 酸化セリウム研磨剤用cmpパッド及び基板の研磨方法
KR100892924B1 (ko) 2000-12-01 2009-04-09 도요 고무 고교 가부시키가이샤 연마 패드
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
DE10131668B4 (de) * 2001-06-29 2006-05-18 Infineon Technologies Ag Verfahren zur abrasiven Bearbeitung von Oberflächen, auf Halbleiter-Wafern
US6593699B2 (en) 2001-11-07 2003-07-15 Axcelis Technologies, Inc. Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
US6899612B2 (en) * 2003-02-25 2005-05-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad apparatus and methods
US20050060941A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Abrasive article and methods of making the same
US7267700B2 (en) * 2003-09-23 2007-09-11 3M Innovative Properties Company Structured abrasive with parabolic sides
US20050060945A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Method of making a coated abrasive
US7300479B2 (en) * 2003-09-23 2007-11-27 3M Innovative Properties Company Compositions for abrasive articles
US20050060944A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Method of making a coated abrasive
US20050060942A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Structured abrasive article
US20050064805A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Structured abrasive article
US6997788B2 (en) * 2003-10-01 2006-02-14 Mosel Vitelic, Inc. Multi-tool, multi-slurry chemical mechanical polishing
JP4531661B2 (ja) * 2005-08-26 2010-08-25 東京エレクトロン株式会社 基板の処理方法及び基板の処理装置
JP2013049112A (ja) * 2011-08-31 2013-03-14 Kyushu Institute Of Technology ポリシングパッド及びその製造方法
JP6567420B2 (ja) * 2013-09-11 2019-08-28 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102608901B1 (ko) * 2018-12-24 2023-12-01 삼성전자주식회사 웨이퍼 그라인딩 휠
US11331767B2 (en) 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
CN111300161B (zh) * 2020-02-26 2022-02-01 上海东竞自动化系统有限公司 表面划痕修复的方法和设备

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DE68920365T2 (de) * 1988-06-28 1995-06-08 Mitsubishi Material Silicon Verfahren zur Polierung eines Halbleiter-Plättchens.
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
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US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
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US5725417A (en) * 1996-11-05 1998-03-10 Micron Technology, Inc. Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates
US6224465B1 (en) * 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface

Also Published As

Publication number Publication date
US6224465B1 (en) 2001-05-01
DE19828477A1 (de) 1999-01-14
US6497613B1 (en) 2002-12-24
JPH1170462A (ja) 1999-03-16
JP3078783B2 (ja) 2000-08-21

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