TW371799B - Semiconductor device and liquid crystal display apparatus - Google Patents

Semiconductor device and liquid crystal display apparatus

Info

Publication number
TW371799B
TW371799B TW085113248A TW85113248A TW371799B TW 371799 B TW371799 B TW 371799B TW 085113248 A TW085113248 A TW 085113248A TW 85113248 A TW85113248 A TW 85113248A TW 371799 B TW371799 B TW 371799B
Authority
TW
Taiwan
Prior art keywords
region
source
layer
channel
drain region
Prior art date
Application number
TW085113248A
Other languages
English (en)
Inventor
Tananori Watanabe
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW371799B publication Critical patent/TW371799B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW085113248A 1995-11-01 1996-10-30 Semiconductor device and liquid crystal display apparatus TW371799B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28492495 1995-11-01
JP28380096A JP3689505B2 (ja) 1995-11-01 1996-10-25 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW371799B true TW371799B (en) 1999-10-11

Family

ID=26555199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113248A TW371799B (en) 1995-11-01 1996-10-30 Semiconductor device and liquid crystal display apparatus

Country Status (3)

Country Link
EP (1) EP0772245A3 (zh)
JP (1) JP3689505B2 (zh)
TW (1) TW371799B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4396599B2 (ja) * 1997-10-31 2010-01-13 セイコーエプソン株式会社 液晶装置及び電子機器並びに投射型表示装置
JP4991263B2 (ja) * 2006-12-05 2012-08-01 株式会社東芝 高周波電力増幅器およびそれを用いた携帯型無線端末

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867062A (ja) * 1981-10-16 1983-04-21 Nec Corp 半導体装置
US4748489A (en) * 1985-03-22 1988-05-31 Nec Corporation Integrated circuit semiconductor device having improved isolation region
JPH0691250B2 (ja) * 1988-09-27 1994-11-14 株式会社東芝 半導体装置
JPH079932B2 (ja) * 1989-04-07 1995-02-01 株式会社東芝 半導体装置
EP0604231B8 (en) * 1992-12-25 2001-04-11 Canon Kabushiki Kaisha Semiconductor device applicable for liquid crystal display device, and process for its fabrication
JP2596340B2 (ja) * 1993-10-08 1997-04-02 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
EP0772245A3 (en) 1998-03-11
JP3689505B2 (ja) 2005-08-31
EP0772245A2 (en) 1997-05-07
JPH09186340A (ja) 1997-07-15

Similar Documents

Publication Publication Date Title
MY123831A (en) Method for manufacturing a semiconductor device
TW328180B (en) Method of fabricating thin film transistor, active array substrate, and liquid crystal display
TW344141B (en) An insulated gate field effect transistor having a crystalline channel region
EP1006584A3 (en) Semiconductor device having SOI structure and manufacturing method thereof
EP0335750A3 (en) Vertical power mosfet having high withstand voltage and high switching speed
TW272313B (en) Metal oxide semiconductor transistor, semiconductor device and process thereof
EP0810652A3 (en) Semiconductor device and manufacture method of same
KR970007965B1 (en) Structure and fabrication method of tft
JPS5766674A (en) Semiconductor device
KR970059790A (ko) 액정표시장치의 구조 및 제조방법
TW345746B (en) Upper gate type thin film transistor and process for producing the same
JPS5727070A (en) Mos type semiconductor device
FR2452789A1 (fr) Transistor a effet de champ
TW288200B (en) Semiconductor device and process thereof
EP0848425A3 (en) Semiconductor device including protection means
JPS5316581A (en) Insulated gate type field effect transistor
TW371799B (en) Semiconductor device and liquid crystal display apparatus
MY107193A (en) Semiconductor device having improved insulated gate type transistor.
KR850005169A (ko) 우물영역을 갖는 반도체기판상에 형성되는 mis형 반도체장치
JPS57201070A (en) Semiconductor device
EP0776048A3 (en) MOS gated device base region with high breakdown resistance
EP0472726A4 (en) Field effect transistor
KR930001502A (ko) 박막 트랜지스터와 이것을 제조하기위한 방법
EP0436038A4 (en) Semiconductor device and method of producing the same
TW373291B (en) Semiconductor device having isolation trenches

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees