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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW086112876ApriorityCriticalpatent/TW371788B/en
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An electric charge capacitor portion having high capacitance storage encased in DRAM comprising a bottom electrode, linking with source/drain electrode of transfer FET. The bottom electrode includes a first polysilicon covering part of transfer FET, then to form an oxide layer on top of the first polysilicon; a HSG-polysilicon with HS grain size about 100 mum and distance between HS grain about 100 mum is thereby formed on the oxide layer, before etching the oxide to create a columnar oxide layer, in which the HS gain polysilicon serves as mask and the first polysilicon as the etching stop layer; again, depositing a second polysilicon on the surface of the columnar oxide and HS grained polysilicon and, finally to from in sequence the capacitance dielectric layer and capacitance top electrode on the second polysilicon layer to accomplish the capacitance structure.
TW086112876A1997-09-061997-09-06Method for fabricating charge storage structure
TW371788B
(en)