TW369671B - Ultraviolet-aided growing method for oxidized film of nitride material at room temperature - Google Patents
Ultraviolet-aided growing method for oxidized film of nitride material at room temperatureInfo
- Publication number
- TW369671B TW369671B TW087105214A TW87105214A TW369671B TW 369671 B TW369671 B TW 369671B TW 087105214 A TW087105214 A TW 087105214A TW 87105214 A TW87105214 A TW 87105214A TW 369671 B TW369671 B TW 369671B
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride material
- oxidized
- ultraviolet
- aided
- room temperature
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/32—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
- C01B13/322—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state
- C01B13/324—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state by solid combustion synthesis
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087105214A TW369671B (en) | 1998-04-07 | 1998-04-07 | Ultraviolet-aided growing method for oxidized film of nitride material at room temperature |
| US09/287,326 US6190508B1 (en) | 1998-04-07 | 1999-04-07 | Method of oxidizing nitride material enhanced by illumination with UV light at room temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087105214A TW369671B (en) | 1998-04-07 | 1998-04-07 | Ultraviolet-aided growing method for oxidized film of nitride material at room temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW369671B true TW369671B (en) | 1999-09-11 |
Family
ID=21629822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087105214A TW369671B (en) | 1998-04-07 | 1998-04-07 | Ultraviolet-aided growing method for oxidized film of nitride material at room temperature |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6190508B1 (zh) |
| TW (1) | TW369671B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW436926B (en) * | 1999-12-01 | 2001-05-28 | Guo Shang Jr | Method for oxidizing a nitride thin film on a conducting substrate |
| US6593193B2 (en) * | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| TWI255256B (en) * | 2003-12-25 | 2006-05-21 | Ind Tech Res Inst | Method and apparatus for oxidizing a nitride film |
| US7253061B2 (en) * | 2004-12-06 | 2007-08-07 | Tekcore Co., Ltd. | Method of forming a gate insulator in group III-V nitride semiconductor devices |
| US7935382B2 (en) * | 2005-12-20 | 2011-05-03 | Momentive Performance Materials, Inc. | Method for making crystalline composition |
| TWI309439B (en) * | 2006-09-05 | 2009-05-01 | Ind Tech Res Inst | Nitride semiconductor and method for forming the same |
| US10262856B2 (en) | 2016-12-16 | 2019-04-16 | The United States Of America, As Represented By The Secretary Of The Navy | Selective oxidation of transition metal nitride layers within compound semiconductor device structures |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
| JPH08203862A (ja) * | 1995-01-27 | 1996-08-09 | Matsushita Electric Ind Co Ltd | 窒化物系化合物半導体のエッチング方法 |
| US5895223A (en) * | 1997-12-10 | 1999-04-20 | Industrial Technology Research Institute | Method for etching nitride |
| JP3076783B2 (ja) * | 1997-12-12 | 2000-08-14 | 財団法人工業技術研究院 | 窒化物材料のエッチング方法 |
-
1998
- 1998-04-07 TW TW087105214A patent/TW369671B/zh not_active IP Right Cessation
-
1999
- 1999-04-07 US US09/287,326 patent/US6190508B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6190508B1 (en) | 2001-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE233984T1 (de) | Verfahren zum vermeiden des irrtümlichen betriebs eines leuchtstofflampenvorschaltgerätes | |
| CA2230777A1 (en) | Advanced synchronous luminescence system | |
| TR200100930T2 (tr) | Işık geçiren bir yüzeye sahip ışık elementi | |
| GB2361298A (en) | An apparatus for illuminating a portable electronic device through a utility power jack | |
| DE59705137D1 (de) | System zum Steuern der Helligkeit eines Raumes | |
| DE69014814T2 (de) | Dimmer für Leuchtstofflampe mit Wechselkathode. | |
| TW369671B (en) | Ultraviolet-aided growing method for oxidized film of nitride material at room temperature | |
| EP1284239A3 (de) | Gerät zur elektrophysikalischen Wasserbehandlung | |
| DE69414898T2 (de) | Licht emittierende Vorrichtung und Verfahren zu ihrer Herstellung | |
| ES2184475T3 (es) | Modificaciones cristalinas de acido lipoico. | |
| HUP0104436A2 (hu) | Üzemeltetési eljárás dielektromosan gátolt, vezérelhető teljesítményű kisülőlámpához | |
| IL141830A0 (en) | Chemiluminescent 1,2-dioxetane | |
| TW200511819A (en) | Apparatus for reducing start-up time by auxiliary light source and method for the same | |
| DE60140513D1 (de) | Dentales implantatträgersystem | |
| EP1323976A3 (de) | Beleuchtungsvorrichtung | |
| DE50209069D1 (de) | Reaktor zur beidseitig gleichzeitigen Beschichtung von Brillengläsern | |
| ATE207284T1 (de) | Verfahren und einrichtung zur feststellung des verbleibenden betriebslebens einer entladungslampe | |
| EP1493621A3 (en) | Lighting device | |
| SE0300132D0 (sv) | Anordning och förfarande vid skyltbelysning | |
| IS4995A (is) | Búnaður til að rækta örverur | |
| NO975687L (no) | Innretning og fremgangsmåte for lysmodulasjon | |
| ES2154234A1 (es) | Linterna de señalizacion. | |
| CA2140559A1 (en) | Energy management control system for fluorescent lighting | |
| TR199900070A2 (xx) | Naftiridonlar�n ve ara ba�lar�n haz�rlanmas�na y�nelik i�lem. | |
| JPS60126015A (ja) | 植物育成用照明装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |