TW366522B - Variable step height control of lithographic patterning through transmitted light intensity variation - Google Patents
Variable step height control of lithographic patterning through transmitted light intensity variationInfo
- Publication number
- TW366522B TW366522B TW086118838A TW86118838A TW366522B TW 366522 B TW366522 B TW 366522B TW 086118838 A TW086118838 A TW 086118838A TW 86118838 A TW86118838 A TW 86118838A TW 366522 B TW366522 B TW 366522B
- Authority
- TW
- Taiwan
- Prior art keywords
- photo
- sensitive material
- area
- light
- light intensity
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/763,373 US5821013A (en) | 1996-12-13 | 1996-12-13 | Variable step height control of lithographic patterning through transmitted light intensity variation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366522B true TW366522B (en) | 1999-08-11 |
Family
ID=25067664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086118838A TW366522B (en) | 1996-12-13 | 1997-12-13 | Variable step height control of lithographic patterning through transmitted light intensity variation |
Country Status (4)
Country | Link |
---|---|
US (1) | US5821013A (zh) |
AU (1) | AU5604398A (zh) |
TW (1) | TW366522B (zh) |
WO (1) | WO1998026331A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08314113A (ja) * | 1995-05-17 | 1996-11-29 | Fujitsu Ltd | マスク及びこれを使用して形成されるプリント基板 |
JP3526215B2 (ja) * | 1997-07-03 | 2004-05-10 | 大日本印刷株式会社 | 光ファイバー加工用位相マスク及びその製造方法 |
US20020028390A1 (en) | 1997-09-22 | 2002-03-07 | Mohammad A. Mazed | Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures |
TW407377B (en) * | 1998-03-11 | 2000-10-01 | United Microelectronics Corp | Method for manufacturing crown shape capacitor |
JP2000156377A (ja) * | 1998-11-19 | 2000-06-06 | Murata Mfg Co Ltd | レジストパターン及びその形成方法並びに配線パターンの形成方法 |
US6472766B2 (en) | 2001-01-05 | 2002-10-29 | Photronics, Inc. | Step mask |
JP3612525B2 (ja) * | 2002-06-04 | 2005-01-19 | Nec液晶テクノロジー株式会社 | 薄膜半導体装置の製造方法及びそのレジストパターン形成方法 |
JP2004283065A (ja) * | 2003-03-20 | 2004-10-14 | Ushio Inc | 化学走性機能制御膜の製造方法および人工材料並びに人工材料の製造方法 |
NL1036647A1 (nl) * | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | A method of measuring a lithographic projection apparatus. |
US7897302B2 (en) * | 2008-08-18 | 2011-03-01 | Sharp Laboratories Of America, Inc. | Error diffusion-derived sub-resolutional grayscale reticle |
US7887980B2 (en) * | 2008-08-18 | 2011-02-15 | Sharp Laboratories Of America, Inc. | Sub-resolutional grayscale reticle |
US8003303B2 (en) * | 2009-04-09 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd | Intensity selective exposure method and apparatus |
US8673520B2 (en) | 2009-04-09 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Intensity selective exposure photomask |
US9229318B2 (en) * | 2010-08-27 | 2016-01-05 | Globalfoundries Inc. | Circuit apparatus having a rounded trace |
FR2975825A1 (fr) * | 2011-05-26 | 2012-11-30 | St Microelectronics Sa | Procede d'obtention d'une couche d'un materiau d'epaisseur controlee, en particulier une couche d'un resonateur acoustique ou optique |
CN102955354B (zh) * | 2012-11-01 | 2015-01-07 | 合肥京东方光电科技有限公司 | 一种掩膜板及其制备方法 |
CN104155842A (zh) * | 2014-07-18 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种掩模板 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4231811A (en) * | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
JPS57121226A (en) * | 1981-01-21 | 1982-07-28 | Hitachi Ltd | Photo mask |
GB2180669A (en) * | 1985-09-20 | 1987-04-01 | Phillips Electronic And Associ | An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask |
US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
US5343292A (en) * | 1990-10-19 | 1994-08-30 | University Of New Mexico | Method and apparatus for alignment of submicron lithographic features |
JPH0566552A (ja) * | 1990-12-28 | 1993-03-19 | Nippon Steel Corp | レチクル |
US5187726A (en) * | 1991-09-30 | 1993-02-16 | Wisconsin Alumni Research Foundation | High resolution X-ray lithography using phase shift masks |
KR0131192B1 (en) * | 1992-04-22 | 1998-04-14 | Toshiba Corp | Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask |
US5447810A (en) * | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
US5476738A (en) * | 1994-05-12 | 1995-12-19 | International Business Machines Corporation | Photolithographic dose determination by diffraction of latent image grating |
JPH0864519A (ja) * | 1994-08-08 | 1996-03-08 | Korea Electron Telecommun | T字形のゲートの形成のためのフォトマスクおよびその製造方法 |
US5589303A (en) * | 1994-12-30 | 1996-12-31 | Lucent Technologies Inc. | Self-aligned opaque regions for attenuating phase-shifting masks |
-
1996
- 1996-12-13 US US08/763,373 patent/US5821013A/en not_active Expired - Lifetime
-
1997
- 1997-12-11 WO PCT/US1997/023070 patent/WO1998026331A1/en active Application Filing
- 1997-12-11 AU AU56043/98A patent/AU5604398A/en not_active Abandoned
- 1997-12-13 TW TW086118838A patent/TW366522B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1998026331A1 (en) | 1998-06-18 |
AU5604398A (en) | 1998-07-03 |
US5821013A (en) | 1998-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |