TW366522B - Variable step height control of lithographic patterning through transmitted light intensity variation - Google Patents

Variable step height control of lithographic patterning through transmitted light intensity variation

Info

Publication number
TW366522B
TW366522B TW086118838A TW86118838A TW366522B TW 366522 B TW366522 B TW 366522B TW 086118838 A TW086118838 A TW 086118838A TW 86118838 A TW86118838 A TW 86118838A TW 366522 B TW366522 B TW 366522B
Authority
TW
Taiwan
Prior art keywords
photo
sensitive material
area
light
light intensity
Prior art date
Application number
TW086118838A
Other languages
English (en)
Inventor
Gayle W Miller
Brian R Lee
Original Assignee
Lsi Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lsi Logic Corp filed Critical Lsi Logic Corp
Application granted granted Critical
Publication of TW366522B publication Critical patent/TW366522B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW086118838A 1996-12-13 1997-12-13 Variable step height control of lithographic patterning through transmitted light intensity variation TW366522B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/763,373 US5821013A (en) 1996-12-13 1996-12-13 Variable step height control of lithographic patterning through transmitted light intensity variation

Publications (1)

Publication Number Publication Date
TW366522B true TW366522B (en) 1999-08-11

Family

ID=25067664

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118838A TW366522B (en) 1996-12-13 1997-12-13 Variable step height control of lithographic patterning through transmitted light intensity variation

Country Status (4)

Country Link
US (1) US5821013A (zh)
AU (1) AU5604398A (zh)
TW (1) TW366522B (zh)
WO (1) WO1998026331A1 (zh)

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JPH08314113A (ja) * 1995-05-17 1996-11-29 Fujitsu Ltd マスク及びこれを使用して形成されるプリント基板
JP3526215B2 (ja) * 1997-07-03 2004-05-10 大日本印刷株式会社 光ファイバー加工用位相マスク及びその製造方法
US20020028390A1 (en) 1997-09-22 2002-03-07 Mohammad A. Mazed Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
TW407377B (en) * 1998-03-11 2000-10-01 United Microelectronics Corp Method for manufacturing crown shape capacitor
JP2000156377A (ja) * 1998-11-19 2000-06-06 Murata Mfg Co Ltd レジストパターン及びその形成方法並びに配線パターンの形成方法
US6472766B2 (en) 2001-01-05 2002-10-29 Photronics, Inc. Step mask
JP3612525B2 (ja) * 2002-06-04 2005-01-19 Ｎｅｃ液晶テクノロジー株式会社 薄膜半導体装置の製造方法及びそのレジストパターン形成方法
JP2004283065A (ja) * 2003-03-20 2004-10-14 Ushio Inc 化学走性機能制御膜の製造方法および人工材料並びに人工材料の製造方法
NL1036647A1 (nl) * 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
US7897302B2 (en) * 2008-08-18 2011-03-01 Sharp Laboratories Of America, Inc. Error diffusion-derived sub-resolutional grayscale reticle
US7887980B2 (en) * 2008-08-18 2011-02-15 Sharp Laboratories Of America, Inc. Sub-resolutional grayscale reticle
US8003303B2 (en) * 2009-04-09 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd Intensity selective exposure method and apparatus
US8673520B2 (en) 2009-04-09 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Intensity selective exposure photomask
US9229318B2 (en) * 2010-08-27 2016-01-05 Globalfoundries Inc. Circuit apparatus having a rounded trace
FR2975825A1 (fr) * 2011-05-26 2012-11-30 St Microelectronics Sa Procede d'obtention d'une couche d'un materiau d'epaisseur controlee, en particulier une couche d'un resonateur acoustique ou optique
CN102955354B (zh) * 2012-11-01 2015-01-07 合肥京东方光电科技有限公司 一种掩膜板及其制备方法
CN104155842A (zh) * 2014-07-18 2014-11-19 京东方科技集团股份有限公司 一种掩模板

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US4231811A (en) * 1979-09-13 1980-11-04 Intel Corporation Variable thickness self-aligned photoresist process
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
GB2180669A (en) * 1985-09-20 1987-04-01 Phillips Electronic And Associ An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US5343292A (en) * 1990-10-19 1994-08-30 University Of New Mexico Method and apparatus for alignment of submicron lithographic features
JPH0566552A (ja) * 1990-12-28 1993-03-19 Nippon Steel Corp レチクル
US5187726A (en) * 1991-09-30 1993-02-16 Wisconsin Alumni Research Foundation High resolution X-ray lithography using phase shift masks
KR0131192B1 (en) * 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
US5476738A (en) * 1994-05-12 1995-12-19 International Business Machines Corporation Photolithographic dose determination by diffraction of latent image grating
JPH0864519A (ja) * 1994-08-08 1996-03-08 Korea Electron Telecommun Ｔ字形のゲートの形成のためのフォトマスクおよびその製造方法
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks

Also Published As

Publication number Publication date
WO1998026331A1 (en) 1998-06-18
AU5604398A (en) 1998-07-03
US5821013A (en) 1998-10-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees