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Application filed by Winbond Electronics CorpfiledCriticalWinbond Electronics Corp
Priority to TW087106281ApriorityCriticalpatent/TW364166B/en
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Publication of TW364166BpublicationCriticalpatent/TW364166B/en
The present invention relates to a structure of a multilayer spin coating material and the production thereof. It is used in the semiconductor planarization process such that process time is easier to control when chemical mechanical polishing is carried out. It is achieved by two spin coating materials with different removal rate, wherein the one with lower removal rate is first formed on the substrate, then the other with higher removal rate is formed, such that a preferred buffer is present when polishing close to the substrate, thereby obtaining the optimum polishing thickness.
TW087106281A1998-04-231998-04-23Structure of multilayer spin coating material and production method thereof
TW364166B
(en)
Reduction method of transition mteal, surface treatment method using thereof, fabricating method of transition mteal particle, and fabricating method of article and wiring board