TW364054B - Measurement tool for distance between shower head and heater platform - Google Patents
Measurement tool for distance between shower head and heater platformInfo
- Publication number
- TW364054B TW364054B TW087121968A TW87121968A TW364054B TW 364054 B TW364054 B TW 364054B TW 087121968 A TW087121968 A TW 087121968A TW 87121968 A TW87121968 A TW 87121968A TW 364054 B TW364054 B TW 364054B
- Authority
- TW
- Taiwan
- Prior art keywords
- shower head
- distance
- heater platform
- measurement tool
- heater
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087121968A TW364054B (en) | 1998-12-31 | 1998-12-31 | Measurement tool for distance between shower head and heater platform |
US09/246,754 US6210754B1 (en) | 1998-12-31 | 1999-02-08 | Method of adjusting for parallel alignment between a shower head and a heater platform in a chamber used in integrated circuit fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087121968A TW364054B (en) | 1998-12-31 | 1998-12-31 | Measurement tool for distance between shower head and heater platform |
Publications (1)
Publication Number | Publication Date |
---|---|
TW364054B true TW364054B (en) | 1999-07-11 |
Family
ID=21632530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087121968A TW364054B (en) | 1998-12-31 | 1998-12-31 | Measurement tool for distance between shower head and heater platform |
Country Status (2)
Country | Link |
---|---|
US (1) | US6210754B1 (zh) |
TW (1) | TW364054B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115354310A (zh) * | 2022-09-29 | 2022-11-18 | 江苏邑文微电子科技有限公司 | 一种等离子增强化学气相沉积装置及其沉积方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6518775B1 (en) * | 2000-11-15 | 2003-02-11 | Promos Technologies Inc. | Process for determining spacing between heater and showerhead |
US20050224899A1 (en) * | 2002-02-06 | 2005-10-13 | Ramsey Craig C | Wireless substrate-like sensor |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US20040040503A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US7282239B2 (en) * | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US7323231B2 (en) * | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7472432B2 (en) * | 2003-12-30 | 2009-01-06 | Letty Ann Owen | Bathtub insert “Take-Five” |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7238623B2 (en) | 2004-10-06 | 2007-07-03 | Texas Instruments Incorporated | Versatile system for self-aligning deposition equipment |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
JP2009527764A (ja) * | 2006-02-21 | 2009-07-30 | サイバーオプティクス セミコンダクタ インコーポレイテッド | 半導体加工ツールにおける静電容量距離検出 |
US7893697B2 (en) * | 2006-02-21 | 2011-02-22 | Cyberoptics Semiconductor, Inc. | Capacitive distance sensing in semiconductor processing tools |
US8823933B2 (en) | 2006-09-29 | 2014-09-02 | Cyberoptics Corporation | Substrate-like particle sensor |
US20080246493A1 (en) * | 2007-04-05 | 2008-10-09 | Gardner Delrae H | Semiconductor Processing System With Integrated Showerhead Distance Measuring Device |
US20090015268A1 (en) * | 2007-07-13 | 2009-01-15 | Gardner Delrae H | Device and method for compensating a capacitive sensor measurement for variations caused by environmental conditions in a semiconductor processing environment |
FI122940B (fi) * | 2009-02-09 | 2012-09-14 | Beneq Oy | Reaktiokammio |
US11408734B2 (en) | 2019-01-03 | 2022-08-09 | Lam Research Corporation | Distance measurement between gas distribution device and substrate support at high temperatures |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3632213A (en) * | 1970-04-30 | 1972-01-04 | Continental Oil Co | Emission spectrometer focus control |
US4728799A (en) * | 1985-06-28 | 1988-03-01 | Control Data Corporation | Height measurement and correction method for electron beam lithography system |
US4987856A (en) * | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
-
1998
- 1998-12-31 TW TW087121968A patent/TW364054B/zh active
-
1999
- 1999-02-08 US US09/246,754 patent/US6210754B1/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115354310A (zh) * | 2022-09-29 | 2022-11-18 | 江苏邑文微电子科技有限公司 | 一种等离子增强化学气相沉积装置及其沉积方法 |
CN115354310B (zh) * | 2022-09-29 | 2022-12-30 | 江苏邑文微电子科技有限公司 | 一种等离子增强化学气相沉积装置及其沉积方法 |
Also Published As
Publication number | Publication date |
---|---|
US6210754B1 (en) | 2001-04-03 |
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