TW362283B - Method of increasing the static electrical capacity of DRAM cells - Google Patents

Method of increasing the static electrical capacity of DRAM cells

Info

Publication number
TW362283B
TW362283B TW086119314A TW86119314A TW362283B TW 362283 B TW362283 B TW 362283B TW 086119314 A TW086119314 A TW 086119314A TW 86119314 A TW86119314 A TW 86119314A TW 362283 B TW362283 B TW 362283B
Authority
TW
Taiwan
Prior art keywords
polycrystalline
silicon
polycrystalline silicon
dram cells
increasing
Prior art date
Application number
TW086119314A
Other languages
English (en)
Inventor
Chih-Hsiang Cheng
Sun-Chieh Chien
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086119314A priority Critical patent/TW362283B/zh
Application granted granted Critical
Publication of TW362283B publication Critical patent/TW362283B/zh

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW086119314A 1997-12-19 1997-12-19 Method of increasing the static electrical capacity of DRAM cells TW362283B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086119314A TW362283B (en) 1997-12-19 1997-12-19 Method of increasing the static electrical capacity of DRAM cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086119314A TW362283B (en) 1997-12-19 1997-12-19 Method of increasing the static electrical capacity of DRAM cells

Publications (1)

Publication Number Publication Date
TW362283B true TW362283B (en) 1999-06-21

Family

ID=57940809

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119314A TW362283B (en) 1997-12-19 1997-12-19 Method of increasing the static electrical capacity of DRAM cells

Country Status (1)

Country Link
TW (1) TW362283B (zh)

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