TW344114B - Process for increasing the charge storage capacity of roughened capacitive electrode - Google Patents

Process for increasing the charge storage capacity of roughened capacitive electrode

Info

Publication number
TW344114B
TW344114B TW086113654A TW86113654A TW344114B TW 344114 B TW344114 B TW 344114B TW 086113654 A TW086113654 A TW 086113654A TW 86113654 A TW86113654 A TW 86113654A TW 344114 B TW344114 B TW 344114B
Authority
TW
Taiwan
Prior art keywords
roughened
polysilicon layer
increasing
forming
layer
Prior art date
Application number
TW086113654A
Other languages
Chinese (zh)
Inventor
Guang-Jau Chern
Ueng-Yi Chern
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW086113654A priority Critical patent/TW344114B/en
Application granted granted Critical
Publication of TW344114B publication Critical patent/TW344114B/en

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A process for increasing the capacitive storage charge capacity of a DRAM, the process comprising the following steps: forming a lower electrode plate of a capacitance on a semiconductor substrate silicon, the lower electrode plate being consisted of a first polysilicon layer and a hemi-spherical grain silicon layer formed on the first polysilicon layer; carrying out an etching process and a washing process on the surface of the hemi-spherical grain silicon layer and the first polysilicon layer thereby forming a roughened polysilicon layer having a roughened surface; forming a dielectric layer on the roughened polysilicon layer; and forming a second polysilicon layer on the dielectric layer to be used as an upper electrode plate of the capacitance.
TW086113654A 1997-09-19 1997-09-19 Process for increasing the charge storage capacity of roughened capacitive electrode TW344114B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086113654A TW344114B (en) 1997-09-19 1997-09-19 Process for increasing the charge storage capacity of roughened capacitive electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086113654A TW344114B (en) 1997-09-19 1997-09-19 Process for increasing the charge storage capacity of roughened capacitive electrode

Publications (1)

Publication Number Publication Date
TW344114B true TW344114B (en) 1998-11-01

Family

ID=58263703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113654A TW344114B (en) 1997-09-19 1997-09-19 Process for increasing the charge storage capacity of roughened capacitive electrode

Country Status (1)

Country Link
TW (1) TW344114B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees