TW360970B - Method to fabricate MOSFETS with ESD resistance and self-aligned silicide - Google Patents

Method to fabricate MOSFETS with ESD resistance and self-aligned silicide

Info

Publication number
TW360970B
TW360970B TW087103430A TW87103430A TW360970B TW 360970 B TW360970 B TW 360970B TW 087103430 A TW087103430 A TW 087103430A TW 87103430 A TW87103430 A TW 87103430A TW 360970 B TW360970 B TW 360970B
Authority
TW
Taiwan
Prior art keywords
forming
region
resistance
gate
layer
Prior art date
Application number
TW087103430A
Other languages
Chinese (zh)
Inventor
Shye-Lin Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087103430A priority Critical patent/TW360970B/en
Application granted granted Critical
Publication of TW360970B publication Critical patent/TW360970B/en

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The invented method comprises: forming an isolation region on a substrate; forming a gate insulation layer and a polysilicon layer; removing a portion of the polysilicon layer to form a gate polysilicon structure; doping a functional element region and an ESD resistance region, thereby forming a first doped region; forming an insulation layer; forming a photoresist layer and defining a resistance pattern; forming a resistance and forming a sidewall structure on the sidewall of the gate polysilicon structure, thereby forming a gate structure; removing the photoresist layer; doping the functional element region and the ESD resistance region, thereby forming a second doped region beneath the region not covered by the gate structure and the resistance in the substrate; performing a first thermal process; and forming a silicide metal layer.
TW087103430A 1998-03-09 1998-03-09 Method to fabricate MOSFETS with ESD resistance and self-aligned silicide TW360970B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087103430A TW360970B (en) 1998-03-09 1998-03-09 Method to fabricate MOSFETS with ESD resistance and self-aligned silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087103430A TW360970B (en) 1998-03-09 1998-03-09 Method to fabricate MOSFETS with ESD resistance and self-aligned silicide

Publications (1)

Publication Number Publication Date
TW360970B true TW360970B (en) 1999-06-11

Family

ID=57940735

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087103430A TW360970B (en) 1998-03-09 1998-03-09 Method to fabricate MOSFETS with ESD resistance and self-aligned silicide

Country Status (1)

Country Link
TW (1) TW360970B (en)

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