TW359892B - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- TW359892B TW359892B TW86116188A TW86116188A TW359892B TW 359892 B TW359892 B TW 359892B TW 86116188 A TW86116188 A TW 86116188A TW 86116188 A TW86116188 A TW 86116188A TW 359892 B TW359892 B TW 359892B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29036296 | 1996-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW359892B true TW359892B (en) | 1999-06-01 |
Family
ID=17755057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW86116188A TW359892B (en) | 1996-10-31 | 1997-10-30 | Semiconductor device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6121650A (zh) |
| JP (1) | JPH10233492A (zh) |
| KR (1) | KR100421521B1 (zh) |
| TW (1) | TW359892B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207985B1 (en) * | 1998-02-02 | 2001-03-27 | Texas Instruments Incorporated | DRAM memory cell and array having pass transistors with surrounding gate |
| US6995412B2 (en) * | 2002-04-12 | 2006-02-07 | International Business Machines Corporation | Integrated circuit with capacitors having a fin structure |
| KR100464414B1 (ko) * | 2002-05-02 | 2005-01-03 | 삼성전자주식회사 | Ｄｃ 노드와 ｂｃ 노드에 연결된 소오스/드레인 접합영역의 접합 프로파일이 서로 다른 디램 소자의 메모리 셀트랜지스터 및 그 제조방법 |
| US7327024B2 (en) * | 2004-11-24 | 2008-02-05 | General Electric Company | Power module, and phase leg assembly |
| JP2007157892A (ja) * | 2005-12-02 | 2007-06-21 | Nec Electronics Corp | 半導体集積回路およびその製造方法 |
| US7414460B1 (en) | 2006-03-31 | 2008-08-19 | Integrated Device Technology, Inc. | System and method for integrated circuit charge recycling |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417325A (en) * | 1981-07-13 | 1983-11-22 | Eliyahou Harari | Highly scaleable dynamic ram cell with self-signal amplification |
| JPH0712058B2 (ja) * | 1985-06-27 | 1995-02-08 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH02122563A (ja) * | 1988-10-31 | 1990-05-10 | Nec Corp | 半導体装置の製造方法 |
| JPH02177359A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | 半導体記憶装置 |
| JPH05259385A (ja) * | 1992-03-10 | 1993-10-08 | Hitachi Ltd | 半導体集積回路装置の形成方法 |
| JPH0653232A (ja) * | 1992-08-03 | 1994-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| TW288200B (en) * | 1995-06-28 | 1996-10-11 | Mitsubishi Electric Corp | Semiconductor device and process thereof |
-
1997
- 1997-10-27 JP JP9294488A patent/JPH10233492A/ja active Pending
- 1997-10-29 US US08/960,144 patent/US6121650A/en not_active Expired - Lifetime
- 1997-10-30 TW TW86116188A patent/TW359892B/zh not_active IP Right Cessation
- 1997-10-31 KR KR1019970056938A patent/KR100421521B1/ko active IP Right Grant
-
2000
- 2000-08-03 US US09/631,405 patent/US6303428B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100421521B1 (ko) | 2004-04-21 |
| KR19980033367A (ko) | 1998-07-25 |
| US6121650A (en) | 2000-09-19 |
| US6303428B1 (en) | 2001-10-16 |
| JPH10233492A (ja) | 1998-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |