TW359030B - Ultra fast shift register using resonant tunnel diodes - Google Patents

Ultra fast shift register using resonant tunnel diodes

Info

Publication number
TW359030B
TW359030B TW086112295A TW86112295A TW359030B TW 359030 B TW359030 B TW 359030B TW 086112295 A TW086112295 A TW 086112295A TW 86112295 A TW86112295 A TW 86112295A TW 359030 B TW359030 B TW 359030B
Authority
TW
Taiwan
Prior art keywords
shift register
tunnel diodes
ultra fast
resonant tunnel
fast shift
Prior art date
Application number
TW086112295A
Other languages
English (en)
Inventor
Hao Tang
Tom P Broekaert
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW359030B publication Critical patent/TW359030B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/12—Digital stores in which the information is moved stepwise, e.g. shift registers using non-linear reactive devices in resonant circuits, e.g. parametrons; magnetic amplifiers with overcritical feedback
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Radar Systems Or Details Thereof (AREA)
TW086112295A 1996-08-26 1997-10-06 Ultra fast shift register using resonant tunnel diodes TW359030B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2456896P 1996-08-26 1996-08-26

Publications (1)

Publication Number Publication Date
TW359030B true TW359030B (en) 1999-05-21

Family

ID=21821261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112295A TW359030B (en) 1996-08-26 1997-10-06 Ultra fast shift register using resonant tunnel diodes

Country Status (5)

Country Link
EP (1) EP0827156B1 (zh)
JP (1) JPH1092188A (zh)
KR (1) KR19980019001A (zh)
DE (1) DE69719264T2 (zh)
TW (1) TW359030B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6456214B1 (en) * 2000-09-27 2002-09-24 Raytheon Company High-speed comparator utilizing resonant tunneling diodes and associated method
KR100588612B1 (ko) * 2004-12-22 2006-06-14 한국과학기술원 Ｃｕｒｒｅｎｔ Ｍｏｄｅ Ｌｏｇｉｃ(ＣＭＬ) 입력드라이빙 회로구성과 ＭｏｎｏｓｔａｂｌｅＢｉｓｔａｂｌｅ Ｔｒａｎｓｉｔｉｏｎ ｌｏｇｉｃｅｌｅｍｅｎｔ(ＭＯＢＩＬＥ)를 이용한 터넬링 다이오드로직 회로
EP2727114B1 (en) 2011-06-28 2020-04-22 Hewlett-Packard Enterprise Development LP Shiftable memory
WO2013062561A1 (en) 2011-10-27 2013-05-02 Hewlett-Packard Development Company, L.P. Shiftable memory supporting atomic operation
DE112011105670B4 (de) 2011-10-27 2020-10-08 Hewlett Packard Enterprise Development Lp Verschiebbarer Speicher, der Ringregister verwendet
CN103890856B (zh) 2011-10-27 2017-07-11 慧与发展有限责任合伙企业 支持内存储数据结构的可移位存储器
US8854860B2 (en) 2011-10-28 2014-10-07 Hewlett-Packard Development Company, L.P. Metal-insulator transition latch
CN103931102A (zh) 2011-10-28 2014-07-16 惠普发展公司，有限责任合伙企业 金属-绝缘体相变触发器
KR101660611B1 (ko) 2012-01-30 2016-09-27 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 워드 시프트 정적 랜덤 액세스 메모리(ws-sram)
US9431074B2 (en) 2012-03-02 2016-08-30 Hewlett Packard Enterprise Development Lp Shiftable memory supporting bimodal storage
WO2013130109A1 (en) 2012-03-02 2013-09-06 Hewlett-Packard Development Company L.P. Shiftable memory defragmentation
US8819376B2 (en) 2012-04-23 2014-08-26 Hewlett-Packard Development Company, L. P. Merging arrays using shiftable memory
WO2014011149A1 (en) 2012-07-10 2014-01-16 Hewlett-Packard Development Company, L.P. List sort static random access memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284139A (zh) * 1961-10-10
JPS63261600A (ja) * 1987-04-17 1988-10-28 Fujitsu Ltd シフトレジスタ回路
US4902912A (en) * 1987-07-01 1990-02-20 American Telephone And Telegraph Company, At&T Bell Laboratories Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics
JPS6451718A (en) * 1987-08-21 1989-02-28 Nec Corp Counter circuit
US5444751A (en) * 1993-09-24 1995-08-22 Massachusetts Institute Of Technology Tunnel diode shift register utilizing tunnel diode coupling

Also Published As

Publication number Publication date
EP0827156A2 (en) 1998-03-04
KR19980019001A (ko) 1998-06-05
EP0827156B1 (en) 2003-02-26
EP0827156A3 (en) 1999-04-07
JPH1092188A (ja) 1998-04-10
DE69719264T2 (de) 2003-11-06
DE69719264D1 (de) 2003-04-03

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees