TW358763B - A polishing method and a method of manufacturing semiconductor using the same - Google Patents

A polishing method and a method of manufacturing semiconductor using the same

Info

Publication number
TW358763B
TW358763B TW086110229A TW86110229A TW358763B TW 358763 B TW358763 B TW 358763B TW 086110229 A TW086110229 A TW 086110229A TW 86110229 A TW86110229 A TW 86110229A TW 358763 B TW358763 B TW 358763B
Authority
TW
Taiwan
Prior art keywords
polishing
same
manufacturing semiconductor
polishing method
ammonium
Prior art date
Application number
TW086110229A
Other languages
Chinese (zh)
Inventor
Noriyuki Sakuma
Yoshio Honma
Seiichi Kondo
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW358763B publication Critical patent/TW358763B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A polishing method featuring using an abrasive containing polishing particles, oxidizing agent and ammonium-containing pH adjusting agent to undergo chemical-mechanical polishing of membrane having metal as major component.
TW086110229A 1997-05-26 1997-07-18 A polishing method and a method of manufacturing semiconductor using the same TW358763B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/001754 WO1998054756A1 (en) 1997-05-26 1997-05-26 Polishing method and semiconductor device manufacturing method using the same

Publications (1)

Publication Number Publication Date
TW358763B true TW358763B (en) 1999-05-21

Family

ID=14180575

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110229A TW358763B (en) 1997-05-26 1997-07-18 A polishing method and a method of manufacturing semiconductor using the same

Country Status (3)

Country Link
AU (1) AU2792797A (en)
TW (1) TW358763B (en)
WO (1) WO1998054756A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429104B2 (en) * 1998-12-28 2014-02-26 日立化成株式会社 Polishing liquid for metal and polishing method using the same
TWI224128B (en) 1998-12-28 2004-11-21 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
JP4555936B2 (en) * 1999-07-21 2010-10-06 日立化成工業株式会社 CMP polishing liquid
JP4657408B2 (en) * 1999-10-13 2011-03-23 株式会社トクヤマ Metal film abrasive
JP4967110B2 (en) * 2008-04-24 2012-07-04 スパンション エルエルシー Manufacturing method of semiconductor device
US8877643B2 (en) 2009-06-05 2014-11-04 Sumco Corporation Method of polishing a silicon wafer
JP2016069535A (en) * 2014-09-30 2016-05-09 株式会社フジミインコーポレーテッド Polishing composition and producing method thereof and polishing method
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
KR20200010071A (en) * 2018-07-20 2020-01-30 주식회사 동진쎄미켐 Chemical mechanical polishing composition, polishinbg slurry, and polishing method for substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475338A (en) * 1990-07-18 1992-03-10 Seiko Epson Corp Mechanochemical polishing method
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
JPH0794455A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Formation of wiring
JP3397501B2 (en) * 1994-07-12 2003-04-14 株式会社東芝 Abrasive and polishing method
JPH08264480A (en) * 1995-03-20 1996-10-11 Fujitsu Ltd Method of fabricating semiconductor device

Also Published As

Publication number Publication date
AU2792797A (en) 1998-12-30
WO1998054756A1 (en) 1998-12-03

Similar Documents

Publication Publication Date Title
MY132376A (en) Fluoride additive containing chemical mechanical polishing slurry and method for use of same
AU4472997A (en) Semiconductor substrate polishing pad dresser, method of manufacturing the same, and chemicomechanical polishing method using the same dresser
MY135955A (en) Polishing composition
AU1683899A (en) Abrasive, method of polishing wafer, and method of producing semiconductor device
MY120573A (en) Slurry comprising a ligand or chelating agent for polishing a surface.
WO2002028980A3 (en) Agglomerate abrasive grain and a method of making the same
MY116265A (en) A polishing composition including an inhibitor of tungsten etching
DE60232356D1 (en)
MY126250A (en) Rare earth salt/oxidizer-based cmp method
AU1468199A (en) Electrochemical-control of abrasive polishing and machining rates
EP0820092A4 (en) Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates
TW349244B (en) Method of fabricating a semiconductor device using a CMP process and a polishing apparatus for such a CMP process
MY126717A (en) Cmp composition containing silane modified abrasive particles.
WO2000000560A3 (en) Chemical mechanical polishing slurry and method for using same
MY118116A (en) Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition
IL147235A0 (en) Chemical mechanical polishing systems and methods for their use
EP1148538A4 (en) Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
IL155856A0 (en) Abrasive article having a window system for polishing wafers, and methods
AU2002361646A1 (en) Abrasive particles containing sintered, polycrystalline zirconia
MY119974A (en) Method for polishing a memory or rigid disk with an amino acid-containing composition
TW358763B (en) A polishing method and a method of manufacturing semiconductor using the same
GB2349840A (en) Abrasive article and method for making the same
WO2002020214A3 (en) Method for polishing a memory or rigid disk with a polishing composition containing an oxidized halide and an acid
WO2003038862A3 (en) Pads for cmp and polishing substrates
EP0668126A3 (en) Porous metal bond grinder and method of manufacturing the same.