AU2792797A - Polishing method and semiconductor device manufacturing method using the same - Google Patents

Polishing method and semiconductor device manufacturing method using the same

Info

Publication number
AU2792797A
AU2792797A AU27927/97A AU2792797A AU2792797A AU 2792797 A AU2792797 A AU 2792797A AU 27927/97 A AU27927/97 A AU 27927/97A AU 2792797 A AU2792797 A AU 2792797A AU 2792797 A AU2792797 A AU 2792797A
Authority
AU
Australia
Prior art keywords
semiconductor device
same
device manufacturing
polishing
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27927/97A
Inventor
Yoshio Homma
Seiichi Kondo
Noriyuki Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of AU2792797A publication Critical patent/AU2792797A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU27927/97A 1997-05-26 1997-05-26 Polishing method and semiconductor device manufacturing method using the same Abandoned AU2792797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/001754 WO1998054756A1 (en) 1997-05-26 1997-05-26 Polishing method and semiconductor device manufacturing method using the same

Publications (1)

Publication Number Publication Date
AU2792797A true AU2792797A (en) 1998-12-30

Family

ID=14180575

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27927/97A Abandoned AU2792797A (en) 1997-05-26 1997-05-26 Polishing method and semiconductor device manufacturing method using the same

Country Status (3)

Country Link
AU (1) AU2792797A (en)
TW (1) TW358763B (en)
WO (1) WO1998054756A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1243071C (en) 1998-12-28 2006-02-22 日立化成工业株式会社 Metal grinding liquid material, metal grinding liquid, its producing method and grinding method using it
JP5429104B2 (en) * 1998-12-28 2014-02-26 日立化成株式会社 Polishing liquid for metal and polishing method using the same
JP4555936B2 (en) * 1999-07-21 2010-10-06 日立化成工業株式会社 CMP polishing liquid
JP4657408B2 (en) * 1999-10-13 2011-03-23 株式会社トクヤマ Metal film abrasive
JP4967110B2 (en) * 2008-04-24 2012-07-04 スパンション エルエルシー Manufacturing method of semiconductor device
WO2010140671A1 (en) 2009-06-05 2010-12-09 株式会社Sumco Silicon wafer polishing method and silicon wafer
JP2016069535A (en) * 2014-09-30 2016-05-09 株式会社フジミインコーポレーテッド Polishing composition and producing method thereof and polishing method
KR20200010071A (en) * 2018-07-20 2020-01-30 주식회사 동진쎄미켐 Chemical mechanical polishing composition, polishinbg slurry, and polishing method for substrate
WO2020017894A1 (en) 2018-07-20 2020-01-23 주식회사 동진쎄미켐 Chemical-mechanical polishing composition, chemical-mechanical polishing slurry, and method for polishing substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475338A (en) * 1990-07-18 1992-03-10 Seiko Epson Corp Mechanochemical polishing method
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
JPH0794455A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Formation of wiring
JP3397501B2 (en) * 1994-07-12 2003-04-14 株式会社東芝 Abrasive and polishing method
JPH08264480A (en) * 1995-03-20 1996-10-11 Fujitsu Ltd Method of fabricating semiconductor device

Also Published As

Publication number Publication date
WO1998054756A1 (en) 1998-12-03
TW358763B (en) 1999-05-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase