TW357348B - Voltage generating circuit - Google Patents

Voltage generating circuit

Info

Publication number
TW357348B
TW357348B TW086117242A TW86117242A TW357348B TW 357348 B TW357348 B TW 357348B TW 086117242 A TW086117242 A TW 086117242A TW 86117242 A TW86117242 A TW 86117242A TW 357348 B TW357348 B TW 357348B
Authority
TW
Taiwan
Prior art keywords
circuit
circuits
generating circuit
voltage generating
voltage
Prior art date
Application number
TW086117242A
Other languages
English (en)
Inventor
Takayuki Suzu
Kenji Hibino
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW357348B publication Critical patent/TW357348B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
TW086117242A 1996-11-15 1997-11-14 Voltage generating circuit TW357348B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32082796A JP3134798B2 (ja) 1996-11-15 1996-11-15 電圧発生回路

Publications (1)

Publication Number Publication Date
TW357348B true TW357348B (en) 1999-05-01

Family

ID=18125684

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117242A TW357348B (en) 1996-11-15 1997-11-14 Voltage generating circuit

Country Status (4)

Country Link
US (1) US6108247A (zh)
JP (1) JP3134798B2 (zh)
KR (1) KR100262372B1 (zh)
TW (1) TW357348B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703568B (zh) * 2019-07-01 2020-09-01 華邦電子股份有限公司 記憶體裝置及其控制方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000066709A (ko) * 1999-04-20 2000-11-15 최규용 카오스 억제 다치 중앙처리장치
DE10001648C2 (de) * 2000-01-17 2002-03-14 Infineon Technologies Ag Integrierte Schaltung mit mehreren Teilschaltungen
US7701761B2 (en) * 2007-12-20 2010-04-20 Sandisk Corporation Read, verify word line reference voltage to track source level
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US9711237B2 (en) * 2010-08-20 2017-07-18 Attopsemi Technology Co., Ltd. Method and structure for reliable electrical fuse programming
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
US12483429B2 (en) 2021-06-01 2025-11-25 Attopsemi Technology Co., Ltd Physically unclonable function produced using OTP memory
US11848324B2 (en) 2021-09-23 2023-12-19 Globalfoundries U.S. Inc. Efuse inside and gate structure on triple-well region
KR102693186B1 (ko) 2023-05-24 2024-08-08 김안태 황토 한지 보습 지관과 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912674A (en) * 1986-01-16 1990-03-27 Hitachi, Ltd. Read-only memory
US5278786A (en) * 1989-04-11 1994-01-11 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device having an area responsive to writing allowance signal
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
JPH07254275A (ja) * 1994-01-31 1995-10-03 Toshiba Corp 半導体記憶装置
JPH0936328A (ja) * 1995-07-14 1997-02-07 Hitachi Ltd ダイナミック型ｒａｍ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703568B (zh) * 2019-07-01 2020-09-01 華邦電子股份有限公司 記憶體裝置及其控制方法

Also Published As

Publication number Publication date
US6108247A (en) 2000-08-22
KR19980042468A (ko) 1998-08-17
JPH10149689A (ja) 1998-06-02
KR100262372B1 (ko) 2000-08-01
JP3134798B2 (ja) 2001-02-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees