TW350137B - Voltage boosting circuit in semiconductor memory device - Google Patents

Voltage boosting circuit in semiconductor memory device

Info

Publication number
TW350137B
TW350137B TW085115786A TW85115786A TW350137B TW 350137 B TW350137 B TW 350137B TW 085115786 A TW085115786 A TW 085115786A TW 85115786 A TW85115786 A TW 85115786A TW 350137 B TW350137 B TW 350137B
Authority
TW
Taiwan
Prior art keywords
voltage boosting
memory device
semiconductor memory
voltage
boosting circuit
Prior art date
Application number
TW085115786A
Other languages
English (en)
Inventor
Jun-Young Jeon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW350137B publication Critical patent/TW350137B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
TW085115786A 1995-12-22 1996-12-20 Voltage boosting circuit in semiconductor memory device TW350137B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950054723A KR0170286B1 (ko) 1995-12-22 1995-12-22 반도체 메모리장치의 전압 승압회로

Publications (1)

Publication Number Publication Date
TW350137B true TW350137B (en) 1999-01-11

Family

ID=19443277

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115786A TW350137B (en) 1995-12-22 1996-12-20 Voltage boosting circuit in semiconductor memory device

Country Status (4)

Country Link
US (1) US5850363A (zh)
JP (1) JP3779403B2 (zh)
KR (1) KR0170286B1 (zh)
TW (1) TW350137B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6075733A (en) * 1998-11-23 2000-06-13 Lsi Logic Corporation Technique for reducing peak current in memory operation
KR100596856B1 (ko) * 1999-12-30 2006-07-04 주식회사 하이닉스반도체 전하 펌프 회로
KR102246878B1 (ko) * 2014-05-29 2021-04-30 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 메모리 모듈, 및 이를 포함하는 메모리 시스템

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2533221B2 (ja) * 1990-05-11 1996-09-11 株式会社東芝 ダイナミック型ランダムアクセスメモリ
GB9423035D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics Voltage boost circuit for a memory device

Also Published As

Publication number Publication date
JP3779403B2 (ja) 2006-05-31
KR970051075A (ko) 1997-07-29
KR0170286B1 (ko) 1999-03-30
JPH09180459A (ja) 1997-07-11
US5850363A (en) 1998-12-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees