TW345663B - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- TW345663B TW345663B TW086116154A TW86116154A TW345663B TW 345663 B TW345663 B TW 345663B TW 086116154 A TW086116154 A TW 086116154A TW 86116154 A TW86116154 A TW 86116154A TW 345663 B TW345663 B TW 345663B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- cell array
- semiconductor memory
- read
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
- G06F5/06—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
- G06F5/10—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor having a sequence of storage locations each being individually accessible for both enqueue and dequeue operations, e.g. using random access memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8291694A JPH10144071A (ja) | 1996-11-01 | 1996-11-01 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW345663B true TW345663B (en) | 1998-11-21 |
Family
ID=17772203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116154A TW345663B (en) | 1996-11-01 | 1997-10-30 | Semiconductor memory device |
Country Status (7)
Country | Link |
---|---|
US (1) | US5956287A (zh) |
EP (1) | EP0840203B1 (zh) |
JP (1) | JPH10144071A (zh) |
KR (1) | KR100343831B1 (zh) |
CN (1) | CN1124609C (zh) |
DE (1) | DE69725088T2 (zh) |
TW (1) | TW345663B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI982040A (fi) | 1998-09-22 | 2000-03-23 | Nokia Multimedia Network Terminals Oy | Menetelmä ja laite datavirran synkronoimiseksi |
TW535161B (en) * | 1999-12-03 | 2003-06-01 | Nec Electronics Corp | Semiconductor memory device and its testing method |
US6826657B1 (en) * | 2001-09-10 | 2004-11-30 | Rambus Inc. | Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules |
US7057249B2 (en) * | 2003-07-02 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
CN100538886C (zh) * | 2005-03-04 | 2009-09-09 | 中国科学院计算技术研究所 | 多维数组在动态随机存取存储器上的快速读写方法和装置 |
KR100721021B1 (ko) | 2006-02-15 | 2007-05-23 | 삼성전자주식회사 | 반도체 메모리 장치의 버스트 리드 회로 및 버스트 데이터출력 방법 |
KR102271502B1 (ko) * | 2017-10-25 | 2021-07-01 | 삼성전자주식회사 | 메모리 장치 및 그 제어 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2187006B (en) * | 1986-02-25 | 1990-01-10 | Sony Corp | Random access memory apparatus |
US4959771A (en) * | 1987-04-10 | 1990-09-25 | Prime Computer, Inc. | Write buffer for a digital processing system |
US5255238A (en) * | 1988-09-08 | 1993-10-19 | Hitachi, Ltd. | First-in first-out semiconductor memory device |
US5058065A (en) * | 1990-02-26 | 1991-10-15 | Eastman Kodak Company | Memory based line-delay architecture |
JP2775549B2 (ja) * | 1992-05-08 | 1998-07-16 | 三菱電機株式会社 | 連想メモリセルおよび連想メモリ回路 |
JP3283659B2 (ja) * | 1993-10-07 | 2002-05-20 | 富士通株式会社 | Fifoメモリの誤動作検出方法及び装置 |
-
1996
- 1996-11-01 JP JP8291694A patent/JPH10144071A/ja not_active Withdrawn
-
1997
- 1997-10-29 US US08/959,857 patent/US5956287A/en not_active Expired - Fee Related
- 1997-10-30 CN CN97121236A patent/CN1124609C/zh not_active Expired - Fee Related
- 1997-10-30 TW TW086116154A patent/TW345663B/zh active
- 1997-10-31 EP EP97119089A patent/EP0840203B1/en not_active Expired - Lifetime
- 1997-10-31 DE DE69725088T patent/DE69725088T2/de not_active Expired - Lifetime
- 1997-10-31 KR KR1019970057320A patent/KR100343831B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19980042012A (ko) | 1998-08-17 |
EP0840203B1 (en) | 2003-09-24 |
JPH10144071A (ja) | 1998-05-29 |
EP0840203A2 (en) | 1998-05-06 |
DE69725088D1 (de) | 2003-10-30 |
KR100343831B1 (ko) | 2002-09-18 |
CN1181595A (zh) | 1998-05-13 |
DE69725088T2 (de) | 2004-06-24 |
EP0840203A3 (en) | 1998-12-30 |
US5956287A (en) | 1999-09-21 |
CN1124609C (zh) | 2003-10-15 |
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