TW343366B - Semiconductor treating apparatus - Google Patents

Semiconductor treating apparatus

Info

Publication number
TW343366B
TW343366B TW086106309A TW86106309A TW343366B TW 343366 B TW343366 B TW 343366B TW 086106309 A TW086106309 A TW 086106309A TW 86106309 A TW86106309 A TW 86106309A TW 343366 B TW343366 B TW 343366B
Authority
TW
Taiwan
Prior art keywords
retaining mechanism
reaction chamber
treating apparatus
works
power source
Prior art date
Application number
TW086106309A
Other languages
English (en)
Inventor
Ryo Shimizu
Sakae Kobai
Original Assignee
Nippon Asm Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Asm Kk filed Critical Nippon Asm Kk
Application granted granted Critical
Publication of TW343366B publication Critical patent/TW343366B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW086106309A 1996-05-15 1997-05-12 Semiconductor treating apparatus TW343366B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14343296 1996-05-15
JP10544697A JP3156920B2 (ja) 1996-05-15 1997-04-09 半導体処理装置

Publications (1)

Publication Number Publication Date
TW343366B true TW343366B (en) 1998-10-21

Family

ID=26445743

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106309A TW343366B (en) 1996-05-15 1997-05-12 Semiconductor treating apparatus

Country Status (4)

Country Link
US (1) US5976312A (zh)
JP (1) JP3156920B2 (zh)
KR (1) KR970077303A (zh)
TW (1) TW343366B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
JP3672416B2 (ja) * 1997-06-27 2005-07-20 株式会社荏原製作所 スピン処理装置
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
US6764573B2 (en) * 2001-10-11 2004-07-20 Northrop Grumman Corporation Wafer thinning techniques
US6899507B2 (en) * 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
KR101288992B1 (ko) * 2011-12-20 2013-08-16 삼성디스플레이 주식회사 어닐링 장치
JP6377479B2 (ja) * 2014-09-29 2018-08-22 株式会社ディスコ プラズマエッチング装置
JP6254981B2 (ja) * 2015-08-12 2017-12-27 ファナック株式会社 レーザ発振器の真空容器
US10351283B2 (en) * 2015-12-17 2019-07-16 Khs Usa, Inc. Magnetically operated sealing bar assembly for packaging machines
US11289311B2 (en) * 2018-10-23 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for reducing vacuum loss in an ion implantation system
CN111326438B (zh) * 2018-12-14 2021-12-17 北京北方华创微电子装备有限公司 调平装置及反应腔室
KR102378581B1 (ko) * 2020-06-19 2022-03-24 씰링크 주식회사 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3905553A1 (de) * 1989-02-23 1990-08-30 Metallgesellschaft Ag Wirbelbrennkammer

Also Published As

Publication number Publication date
JPH1050658A (ja) 1998-02-20
KR970077303A (ko) 1997-12-12
JP3156920B2 (ja) 2001-04-16
US5976312A (en) 1999-11-02

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