TW337599B - Process for forming contactless window array of high density nonvolatile memory - Google Patents

Process for forming contactless window array of high density nonvolatile memory

Info

Publication number
TW337599B
TW337599B TW086103965A TW86103965A TW337599B TW 337599 B TW337599 B TW 337599B TW 086103965 A TW086103965 A TW 086103965A TW 86103965 A TW86103965 A TW 86103965A TW 337599 B TW337599 B TW 337599B
Authority
TW
Taiwan
Prior art keywords
forming
polysilicon
nonvolatile memory
high density
layer
Prior art date
Application number
TW086103965A
Other languages
English (en)
Inventor
Shye-Lin Wu
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW086103965A priority Critical patent/TW337599B/zh
Priority to US08/935,544 priority patent/US6033956A/en
Application granted granted Critical
Publication of TW337599B publication Critical patent/TW337599B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
TW086103965A 1997-03-27 1997-03-27 Process for forming contactless window array of high density nonvolatile memory TW337599B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086103965A TW337599B (en) 1997-03-27 1997-03-27 Process for forming contactless window array of high density nonvolatile memory
US08/935,544 US6033956A (en) 1997-03-27 1997-09-23 Method to form contactless array for high density nonvolatile memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086103965A TW337599B (en) 1997-03-27 1997-03-27 Process for forming contactless window array of high density nonvolatile memory

Publications (1)

Publication Number Publication Date
TW337599B true TW337599B (en) 1998-08-01

Family

ID=21626486

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103965A TW337599B (en) 1997-03-27 1997-03-27 Process for forming contactless window array of high density nonvolatile memory

Country Status (2)

Country Link
US (1) US6033956A (zh)
TW (1) TW337599B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3097657B2 (ja) * 1998-05-13 2000-10-10 日本電気株式会社 半導体記憶装置とその製造方法
TW367594B (en) * 1998-07-30 1999-08-21 United Microelectronics Corp Manufacturing method for flash memory cell of non-salicided source contact
US6867097B1 (en) * 1999-10-28 2005-03-15 Advanced Micro Devices, Inc. Method of making a memory cell with polished insulator layer
US6468915B1 (en) 2000-09-21 2002-10-22 Taiwan Semiconductor Manufacturing Company Method of silicon oxynitride ARC removal after gate etching
US8728940B2 (en) * 2012-01-26 2014-05-20 Micron Technology, Inc. Memory arrays and methods of forming same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US5472898A (en) * 1994-08-09 1995-12-05 United Microelectronics Corp. Process for making a mask ROM with self-aligned coding technology
US5523251A (en) * 1994-10-05 1996-06-04 United Microelectronics Corp. Method for fabricating a self aligned mask ROM
US5693551A (en) * 1995-09-19 1997-12-02 United Microelectronics, Corporation Method for fabricating a tri-state read-only memory device
US5770501A (en) * 1995-12-22 1998-06-23 United Microelectronics Corporation Process of fabricating NAND-structure flash EEPROM using liquid phase deposition

Also Published As

Publication number Publication date
US6033956A (en) 2000-03-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees