TW333688B - The enhanced reflective coating method for lithography of narrow aperture contact and interconnection - Google Patents

The enhanced reflective coating method for lithography of narrow aperture contact and interconnection

Info

Publication number
TW333688B
TW333688B TW086115292A TW86115292A TW333688B TW 333688 B TW333688 B TW 333688B TW 086115292 A TW086115292 A TW 086115292A TW 86115292 A TW86115292 A TW 86115292A TW 333688 B TW333688 B TW 333688B
Authority
TW
Taiwan
Prior art keywords
positive photoresist
lithography
interconnection
narrow aperture
coating method
Prior art date
Application number
TW086115292A
Other languages
Chinese (zh)
Inventor
Chyr-Yuan Jin
Sen-Huann Hwang
xiang-yuan Zheng
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW086115292A priority Critical patent/TW333688B/en
Application granted granted Critical
Publication of TW333688B publication Critical patent/TW333688B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method by using positive photoresist to form narrow aperture width IC, it includes: Semiconductor substrate; Form insulating layer on semiconductor substrate. Form reflection layer, which reflectivity is larger than insulating layer, on insulating layer. Form flat-coating positive photoresist on reflection layer. Through exposure point to expose the flat-coating positive photoresist into exposed flat-coating positive photoresist. Develop exposed flat-coating positive photoresist into positive photoresist etching photomask pattern.
TW086115292A 1997-10-17 1997-10-17 The enhanced reflective coating method for lithography of narrow aperture contact and interconnection TW333688B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086115292A TW333688B (en) 1997-10-17 1997-10-17 The enhanced reflective coating method for lithography of narrow aperture contact and interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086115292A TW333688B (en) 1997-10-17 1997-10-17 The enhanced reflective coating method for lithography of narrow aperture contact and interconnection

Publications (1)

Publication Number Publication Date
TW333688B true TW333688B (en) 1998-06-11

Family

ID=58262918

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115292A TW333688B (en) 1997-10-17 1997-10-17 The enhanced reflective coating method for lithography of narrow aperture contact and interconnection

Country Status (1)

Country Link
TW (1) TW333688B (en)

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees