JPH05257288A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPH05257288A JPH05257288A JP4053012A JP5301292A JPH05257288A JP H05257288 A JPH05257288 A JP H05257288A JP 4053012 A JP4053012 A JP 4053012A JP 5301292 A JP5301292 A JP 5301292A JP H05257288 A JPH05257288 A JP H05257288A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist
- pattern
- light
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造工程等
で用いられるレジストパターンの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a resist pattern used in a semiconductor device manufacturing process or the like.
【０００２】近年，半導体装置の高集積化，微細化に伴
い，サブミクロン級あるいはそれ以下の微細なレジスト
パターンの形成が要求されている。In recent years, with the high integration and miniaturization of semiconductor devices, it is required to form a fine resist pattern of sub-micron grade or smaller.
【０００３】[0003]
【従来の技術】従来のリソグラフィ工程では，基板上に
レジスト膜を塗布し，所定パターンのマスクを用いて露
光，現像してレジストパターンを形成していた。2. Description of the Related Art In a conventional lithography process, a resist film is applied on a substrate and exposed and developed using a mask having a predetermined pattern to form a resist pattern.
【０００４】[0004]
【発明が解決しようとする課題】従来例のように，基板
上に直接レジスト膜が塗布された場合は，基板表面が反
射率の高い被膜で覆われていると，段差部での光の乱反
射，あるいは入射光と基板表面の反射光との干渉による
影響で，微細パターンが形成できないという問題があっ
た。When the resist film is directly coated on the substrate as in the conventional example, if the surface of the substrate is covered with a film having high reflectance, irregular reflection of light at the step portion is caused. Alternatively, there is a problem that a fine pattern cannot be formed due to the influence of the interference between the incident light and the reflected light on the substrate surface.
【０００５】この問題を解決するために，レジスト膜の
下に光の吸収率の大きいポリマを敷くことが考えられる
が，形成されたレジストパターンをマスクにしてこのポ
リマをエッチングしようとすると，一般的にポリマのエ
ッチング速度が遅いため正常なエッチングができないと
いう問題があった。To solve this problem, it is conceivable to lay a polymer having a high light absorption rate under the resist film. However, it is common to etch the polymer with the formed resist pattern as a mask. In addition, there is a problem that normal etching cannot be performed because the polymer etching rate is slow.
【０００６】特に，この問題は微細加工用に用いられる
短波長光（KrF, ArFエキシマレーザ光による) の露光で
深刻な問題である。本発明はレジスト膜の下地ポリマ膜
として, 波長が 250 nm 以下の短波長光の吸収率が大き
く, 且つエッチングの容易なポリマを選び，パターンの
解像度の向上を目的とする。In particular, this problem is a serious problem in the exposure of short wavelength light (KrF, ArF excimer laser light) used for fine processing. An object of the present invention is to improve the pattern resolution by selecting, as a base polymer film for a resist film, a polymer having a large absorption rate for short wavelength light having a wavelength of 250 nm or less and being easily etched.
【０００７】[0007]
【課題を解決するための手段】上記課題の解決は， １）基板上に下記の一般式(２)[Means for Solving the Problems] To solve the above problems, 1) the following general formula (2) on a substrate
【０００８】[0008]
【化２】 で表されるポリマとレジストを順次塗布し，次いで, 該
レジストを波長 250 nm以下の光で露光し, 現像してレ
ジストパターンを形成するパターン形成方法，あるいは ２）前記レジストパターンをマスクにして前記基板をエ
ッチングする前記１）記載のパターン形成方法，あるい
は ３）前記基板の表面がシリコンまたはタングステンを含
む金属膜である前記１）あるいは２）記載のパターン形
成方法により達成される。[Chemical 2] A pattern forming method of sequentially applying a polymer and a resist represented by, and then exposing the resist with light having a wavelength of 250 nm or less and developing the resist pattern, or 2) using the resist pattern as a mask This is achieved by the pattern forming method described in 1) above, wherein the substrate is etched, or 3) the pattern forming method described in 1) or 2) above, wherein the surface of the substrate is a metal film containing silicon or tungsten.
【０００９】[0009]
【作用】図１は一般式(1) で表されるポリマの光の吸収
特性を示す図である。縦軸は吸収率（任意単位），横軸
は波長を示す。FIG. 1 is a diagram showing the light absorption characteristics of the polymer represented by the general formula (1). The vertical axis represents the absorptance (arbitrary unit) and the horizontal axis represents the wavelength.
【００１０】エキシマレーザ露光のKrF (248 nm), ArF
(193 nm)の光をよく吸収するので，基板の反射による影
響は受けない。また，一般式(1) に示されるポリマはシ
リコン(Si)を多く含んでいるので, ハロゲンガスを用い
たエッチングにより, 基板とともにエッチングされるの
で, エッチングの妨げとならない。Excimer laser exposure KrF (248 nm), ArF
It absorbs light at (193 nm) well, so it is not affected by substrate reflection. Moreover, since the polymer represented by general formula (1) contains a large amount of silicon (Si), it does not interfere with the etching because it is etched together with the substrate by etching with halogen gas.
【００１１】[0011]
【実施例】表面に段差が約0.3 μｍあるSi基板上に被着
されたタングステン(W) 膜上に,下記の式(３)[Example] The following formula (3) was formed on a tungsten (W) film deposited on a Si substrate having a surface step difference of about 0.3 μm.
【００１２】[0012]
【化３】 で表されるポリマを1000Åの厚さに塗布し，その上にレ
ジストを約１μｍの厚さに塗布する。[Chemical 3] The polymer represented by is applied to a thickness of 1000Å, and the resist is applied to a thickness of about 1 μm on it.
【００１３】次いで，KrF エキシマレーザを用いてステ
ッパで露光し，アルカリ水溶液で現像する。この結果，
0.3 μｍのレジストパターンが形成できた。このレジス
トパターンをマスクにして, タングステン膜をCCl4＋O2
ガスを用いた反応性イオンエッチング(RIE) によりエッ
チングしたところ，式(３) のポリマはタングステンと
ともに問題なくエッチングできた。Next, a KrF excimer laser is used to expose with a stepper, and development is performed with an alkaline aqueous solution. As a result,
A resist pattern of 0.3 μm could be formed. Using this resist pattern as a mask, the tungsten film is covered with CCl 4 + O 2
When etched by reactive ion etching (RIE) using gas, the polymer of formula (3) could be etched without problems together with tungsten.
【００１４】なお，比較例として式(３) のポリマを塗
布しないで，レジストをパターニングしたところ段差の
ないところでは0.3 μｍが解像できたが，段差部では0.
4 μｍまでしか正常に解像できなかった。また，基板表
面よりの反射光と入射光との干渉による定在波で, パタ
ーンの側面がギザギザになっていた。As a comparative example, when the resist of the above formula (3) was not applied and the resist was patterned, 0.3 μm could be resolved where there was no step, but at the stepped portion it was found to be 0.
The resolution was normal only up to 4 μm. In addition, the side surface of the pattern was notched due to the standing wave caused by the interference between the reflected light from the substrate surface and the incident light.
【００１５】[0015]
【発明の効果】本発明によれば, レジスト膜の下地ポリ
マ膜として短波長光の吸収率が大きく, 且つエッチング
の容易なポリマが得られ，パターンの解像度が向上し，
半導体装置の高集積化, 高機能化に寄与することができ
た。EFFECTS OF THE INVENTION According to the present invention, a polymer having a large absorption rate for short wavelength light and easy etching can be obtained as a base polymer film for a resist film, and the pattern resolution is improved.
We were able to contribute to higher integration and higher functionality of semiconductor devices.
【図１】 一般式(1) で表されるポリマの光の吸収特性
を示す図FIG. 1 is a diagram showing light absorption characteristics of a polymer represented by a general formula (1).
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/302 Ｐ 7353−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/302 P 7353-4M
Claims (3)
レジストを波長 250 nm以下の光で露光し, 現像してレ
ジストパターンを形成することを特徴とするパターン形
成方法。1. The following general formula (1) on a substrate: A pattern forming method characterized by forming a resist pattern by sequentially coating a polymer represented by, and a resist, exposing the resist with light having a wavelength of 250 nm or less, and developing the resist.
記基板をエッチングすることを特徴とする請求項１記載
のパターン形成方法。2. The pattern forming method according to claim 1, wherein the substrate is etched by using the resist pattern as a mask.
ステンを含む金属膜であることを特徴とする請求項１あ
るいは２記載のパターン形成方法。3. The pattern forming method according to claim 1, wherein the surface of the substrate is a metal film containing silicon or tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4053012A JPH05257288A (en) | 1992-03-12 | 1992-03-12 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4053012A JPH05257288A (en) | 1992-03-12 | 1992-03-12 | Formation of pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05257288A true JPH05257288A (en) | 1993-10-08 |
Family
ID=12930998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4053012A Withdrawn JPH05257288A (en) | 1992-03-12 | 1992-03-12 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05257288A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6025117A (en) * | 1996-12-09 | 2000-02-15 | Kabushiki Kaisha Toshiba | Method of forming a pattern using polysilane |
| US6270948B1 (en) | 1996-08-22 | 2001-08-07 | Kabushiki Kaisha Toshiba | Method of forming pattern |
| GB2391013A (en) * | 2002-07-18 | 2004-01-28 | Hynix Semiconductor Inc | Anti-reflective coating comprising polydimethylsiloxane |
-
1992
- 1992-03-12 JP JP4053012A patent/JPH05257288A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270948B1 (en) | 1996-08-22 | 2001-08-07 | Kabushiki Kaisha Toshiba | Method of forming pattern |
| US6025117A (en) * | 1996-12-09 | 2000-02-15 | Kabushiki Kaisha Toshiba | Method of forming a pattern using polysilane |
| GB2391013A (en) * | 2002-07-18 | 2004-01-28 | Hynix Semiconductor Inc | Anti-reflective coating comprising polydimethylsiloxane |
| GB2391013B (en) * | 2002-07-18 | 2007-02-21 | Hynix Semiconductor Inc | Anti-reflective coating comprising polydimethylsiloxane |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |