TW333666B - The heat treatment method and radiant heating apparatus - Google Patents

The heat treatment method and radiant heating apparatus

Info

Publication number
TW333666B
TW333666B TW086102935A TW86102935A TW333666B TW 333666 B TW333666 B TW 333666B TW 086102935 A TW086102935 A TW 086102935A TW 86102935 A TW86102935 A TW 86102935A TW 333666 B TW333666 B TW 333666B
Authority
TW
Taiwan
Prior art keywords
heat treatment
heating apparatus
treatment method
radiant heating
temperature
Prior art date
Application number
TW086102935A
Other languages
English (en)
Inventor
Naoudo Tate
Tomoyuki Sakai
Naohisa Toda
Hitoshi Hanebuka
Original Assignee
Sinetsu Hsandotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sinetsu Hsandotai Kk filed Critical Sinetsu Hsandotai Kk
Application granted granted Critical
Publication of TW333666B publication Critical patent/TW333666B/zh

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW086102935A 1996-03-12 1997-03-10 The heat treatment method and radiant heating apparatus TW333666B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8083327A JPH09246200A (ja) 1996-03-12 1996-03-12 熱処理方法および輻射加熱装置

Publications (1)

Publication Number Publication Date
TW333666B true TW333666B (en) 1998-06-11

Family

ID=13799342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102935A TW333666B (en) 1996-03-12 1997-03-10 The heat treatment method and radiant heating apparatus

Country Status (6)

Country Link
US (1) US6072164A (zh)
EP (1) EP0910115A4 (zh)
JP (1) JPH09246200A (zh)
KR (1) KR19990087737A (zh)
TW (1) TW333666B (zh)
WO (1) WO1997034318A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
DE10031447B4 (de) 2000-06-28 2004-10-28 Hengst Gmbh & Co.Kg Vorrichtung zum Erwärmen von schmelzfähigem Material
DE10255098A1 (de) 2002-11-26 2004-06-03 Mattson Thermal Products Gmbh Verfahren zum Herstellen eines Kalibrationswafers
JP2005122816A (ja) 2003-10-16 2005-05-12 Matsushita Electric Ind Co Ltd ディスクローディング装置
JP2007095889A (ja) * 2005-09-28 2007-04-12 Ushio Inc 光照射式加熱方法
JP2008235858A (ja) * 2007-02-20 2008-10-02 National Institute Of Advanced Industrial & Technology 半導体表面温度測定方法及びその装置
WO2008102596A1 (ja) * 2007-02-20 2008-08-28 National Institute Of Advanced Industrial Science And Technology 半導体表面温度測定方法及びその装置
JP5012554B2 (ja) * 2008-02-19 2012-08-29 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP5349819B2 (ja) * 2008-03-25 2013-11-20 大日本スクリーン製造株式会社 熱処理装置
JP5562529B2 (ja) * 2008-04-17 2014-07-30 大日本スクリーン製造株式会社 熱処理装置
EP2337066A1 (en) * 2009-12-15 2011-06-22 Excico France Method for making a semiconductor device by laser irradiation
US20180286719A1 (en) * 2017-03-28 2018-10-04 Nuflare Technology, Inc. Film forming apparatus and film forming method
JP7372074B2 (ja) 2019-08-07 2023-10-31 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
US20220322492A1 (en) * 2021-04-06 2022-10-06 Applied Materials, Inc. Epitaxial deposition chamber

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62102123A (ja) * 1985-10-30 1987-05-12 Hitachi Ltd 温度計測方法
JPH0640027B2 (ja) * 1985-11-07 1994-05-25 光洋リンドバ−グ株式会社 光加熱処理装置における被加熱処理物温度の測定方法
JPS62296512A (ja) * 1986-06-17 1987-12-23 Fujitsu Ltd 気相成長装置
US4956538A (en) * 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
JPH03165514A (ja) * 1989-11-24 1991-07-17 Fujitsu Ltd 半導体装置の製造方法及び製造装置
JPH04713A (ja) * 1989-12-26 1992-01-06 Sumitomo Metal Ind Ltd 基板の加熱装置
US5147498A (en) * 1990-04-09 1992-09-15 Anelva Corporation Apparatus for controlling temperature in the processing of a substrate
JPH0448724A (ja) * 1990-06-15 1992-02-18 Hitachi Ltd 半導体熱処理装置
US5114242A (en) * 1990-12-07 1992-05-19 Ag Processing Technologies, Inc. Bichannel radiation detection method
US5156461A (en) * 1991-05-17 1992-10-20 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
US5377126A (en) * 1991-09-13 1994-12-27 Massachusetts Institute Of Technology Non-contact temperature measurement of a film growing on a substrate
US5443315A (en) * 1993-12-16 1995-08-22 Texas Instruments Incorporated Multi-zone real-time emissivity correction system
JPH07218345A (ja) * 1994-01-28 1995-08-18 Hitachi Zosen Corp 高温物体の測温装置
JPH07240378A (ja) * 1994-02-28 1995-09-12 Toshiba Corp 半導体薄膜製造装置
US5823681A (en) * 1994-08-02 1998-10-20 C.I. Systems (Israel) Ltd. Multipoint temperature monitoring apparatus for semiconductor wafers during processing
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry

Also Published As

Publication number Publication date
WO1997034318A1 (fr) 1997-09-18
KR19990087737A (ko) 1999-12-27
JPH09246200A (ja) 1997-09-19
EP0910115A1 (en) 1999-04-21
EP0910115A4 (en) 2000-02-02
US6072164A (en) 2000-06-06

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