TW317031B - - Google Patents
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- Publication number
- TW317031B TW317031B TW085115103A TW85115103A TW317031B TW 317031 B TW317031 B TW 317031B TW 085115103 A TW085115103 A TW 085115103A TW 85115103 A TW85115103 A TW 85115103A TW 317031 B TW317031 B TW 317031B
- Authority
- TW
- Taiwan
- Prior art keywords
- line
- crystal
- storage
- gate
- drain
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 79
- 230000009471 action Effects 0.000 claims description 62
- 230000001419 dependent effect Effects 0.000 claims description 57
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 210000003625 skull Anatomy 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 238000010411 cooking Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- RZZPDXZPRHQOCG-OJAKKHQRSA-O CDP-choline(1+) Chemical group O[C@@H]1[C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OCC[N+](C)(C)C)O[C@H]1N1C(=O)N=C(N)C=C1 RZZPDXZPRHQOCG-OJAKKHQRSA-O 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19950047449 | 1995-12-07 | ||
| KR1019960034768A KR100200725B1 (ko) | 1995-12-07 | 1996-08-21 | 비휘발성 메모리 소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW317031B true TW317031B (enrdf_load_stackoverflow) | 1997-10-01 |
Family
ID=19438299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085115103A TW317031B (enrdf_load_stackoverflow) | 1995-12-07 | 1996-12-06 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100200725B1 (enrdf_load_stackoverflow) |
| TW (1) | TW317031B (enrdf_load_stackoverflow) |
-
1996
- 1996-08-21 KR KR1019960034768A patent/KR100200725B1/ko not_active Expired - Fee Related
- 1996-12-06 TW TW085115103A patent/TW317031B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970051172A (ko) | 1997-07-29 |
| KR100200725B1 (ko) | 1999-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |