516202 A7 A7 ， B7 五、發明説明（1 ) 發明所屬之技術頜域 本發明係關於適用於半導體元件製程中之離子佈植器 之污染測定系統及污染測定方法，尤其關於不必使用另備 之測試用晶圓，亦能測定頼粒並正確地掌握製程室內之污 染實態，且可對製程進行中之各批量監控因顆粒所造成製 程室內部污染狀態之離子佈植器污染測定系統及污染測定 方法。 欲解決之問題 一般而言，使用離子佈植器在晶圓表面佈植離子的過 程中會產生微細粒子（以下稱爲顆粒；particle)，由此 種顆粒所造成離子佈植製程室內部之污染程度乃是對製 品品質構成決定性重大要因。 另一方面，爲了管理構成離子佈植裝置之製程室內部_ 之污染實際情形而使用裸晶圚（bare wafer)來測定顆粒 之表面掃描測定（surfscan check)方式已廣泛地被應 用。 經濟部中央揉率局貝工消費合作社印製 (請先聞讀背面之注項再填寫本頁) • 圖6’爲按步驟表示根據上述表面掃描測定方式之顆粒 測定方法之方塊圇，茲將之具體說明如次。 首先，藉表面掃描裝置實施附著於初期裸晶圓表面之 頼粒數量之初級測試。（S 1 ) 然後，藉裝載（loading)設備在離子佈植器製程室內 之圓板上固定已完成該項測定之裸晶圓。（S3) 本紙張尺度適用中國國家標準（CNS > Α4規格（2丨0X297公釐） 經濟部中央梂準局貞工消费合作社印装 316292 A7 __:_^_B7_ 五、發明説明（2 ) 以此狀態下以與離子佈植狀態相同之製程條件使裝置 動作一定時間。（只不實行離子佈植之狀態）。（S3) 動作結束後，將該裸晶圓卸下於製程室外部。（S4) 繼後，藉表面掃描裝置測定吸附在如上述所卸下之裸 晶圓表面之顆粒數量，並將之與附著在初期裸晶圓表面之 顆粒數量相比較，即可掌握因顆粒所造成製程室內之相對 性污染。 測試結果，製程室內顆粒數童若出現低於污染管理上 之設定目標（顆粒數目）之數値，則繼續進行製程，若測出 顆粒數量超過設定標準値時則予以停頓製程之進行並實施 淸洗作業。 然而，此種離子佈植器製程室內之顆粒測定方法，實 質上僅係就離子束（ion beam)未存在狀態下之製程室內 部之污染程度加以管理而已，不但不能正確地掌握實際離 子束存在狀態下於離子佈植中所發生顆粒之污染程度，且 根據實際確認所得結果顯示，與未植入離子之狀態相較， 則在離子植入狀態下顆粒之發生會顯著地增多，所以以往 之顆粒測定方法，其可靠性仍有問題存在》 又因利用以往之表面掃描測定方式之製程室內顆粒所 造成污染程度之測定作業係在離子佈植裝置之運作停頓狀 態下進行•所以設備之工作效率和產量降低，而且此種顆 粒所造成污染程度之檢査測定作業，以往係週期性地按一 定期間（通常是24小時）才實施一次，因此，實際上乃不 ， -4 - 本紙張尺度逍用中國國家標率（CNS ) A4规格（2丨0><297公釐） I ο,------•町------C (請先聞讀背面之注$項再填寫本頁)516202 A7 A7, B7 V. Description of the invention (1) Technical field of the invention The present invention relates to a pollution measurement system and a pollution measurement method applicable to an ion implanter in a semiconductor device manufacturing process, in particular, it is unnecessary to use a separate test Using wafers, it is also possible to measure the grains and accurately grasp the actual pollution status in the process chamber, and can monitor the batch of the ion implanter pollution measurement system and pollution measurement in the process chamber due to the particles caused by the particles in the process. method. Problems to be solved Generally speaking, when ion implanters are used to implant ions on the surface of a wafer, fine particles (hereinafter referred to as particles) are generated, and the interior of the ion implantation process chamber is caused by such particles. The degree is a decisive and important factor for the quality of products. On the other hand, the surfscan check method using bare wafer to measure particles has been widely used in order to manage the actual contamination of the process chamber constituting the ion implantation device. Printed by the Beigong Consumer Cooperative of the Ministry of Economic Affairs (Please read the notes on the back before filling in this page) • Figure 6 'is a block diagram showing the particle measurement method according to the above surface scanning measurement method according to the steps. The specific explanation is as follows. First, the primary test of the number of grains adhering to the surface of the initial bare wafer is performed by the surface scanning device. (S 1) Then, the loading equipment is used to fix the bare wafer that has completed the measurement on the circular plate in the process chamber of the ion implanter. (S3) This paper scale is applicable to the Chinese National Standard (CNS > Α4 specification (2 丨 0X297mm) Printed by 316292 A7 of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 316292 A7 __: _ ^ _ B7_ In this state, the device is operated for a certain period of time under the same process conditions as the ion implantation state (only the ion implantation state is not implemented). (S3) After the operation is completed, the bare wafer is unloaded outside the process chamber. S4) Then, use the surface scanning device to measure the number of particles adsorbed on the surface of the bare wafer unloaded as described above, and compare it with the number of particles attached to the surface of the initial bare wafer. Relative pollution in the process room. As a result of the test, if the number of particles in the process room is lower than the set target (number of particles) in pollution management, the process will be continued, and if the measured number of particles exceeds the set standard value, it will be given The process of suspending the process and performing the washing operation. However, the particle measurement method in the process chamber of the ion implanter is essentially only the process in the absence of the ion beam. The pollution degree inside the room is managed. Not only can it not accurately grasp the pollution degree of the particles generated in the ion implantation in the actual state of the ion beam, and according to the results of actual confirmation, it is compared with the state without the ion implantation. In the ion implantation state, the occurrence of particles will increase significantly, so the reliability of the previous particle measurement method still has problems. "And the measurement of the degree of pollution caused by the particles in the process room using the previous surface scanning measurement method It is carried out when the operation of the ion implantation device is stopped. Therefore, the work efficiency and output of the equipment are reduced, and the inspection and measurement of the degree of pollution caused by such particles has previously been performed periodically for a certain period (usually 24 hours) Implemented once, so in fact it is not, -4-This paper standard uses the Chinese National Standard (CNS) A4 specification (2 丨 0 > < 297mm) I ο, ------ • 町- ----- C (please read the $ item on the back and then fill in this page)
Si咖2 A7 B7 五、發明説明（3 ) 能測試到於該檢査週期之間內可能發生之突發性製程室污 染所造成裝置之缺陷。 又對於製程進行中偶爾會發生的諸如晶圓龜裂或破損 所引起顆粒之急劇增加等突發性製程室內污染所造成之製 程失敗，或其他（飛出離子之漏泄）原因而發生之事故及異 常發生之狀況，亦不能加以監控，故必將招致製程失敗。 以往並未曾有可感測如上述之製程室突發性污染狀態 並予以因應之方法，而造成持續性的製程失敗一直延續到 裝置之檢驗週期爲止。若係於檢驗週期內可由管理者以肉 眼察覺出其污染狀態之程度，則製程室內和晶圓之污染已 是進行到被擴大之程度。 如上述之經濟上之損失規模，即使在一製程中將13 片晶圓同時裝載而進行製程，且假設此製程需時約一小 時，但亦會造成單位時間所損失之晶圓缺陷所引起直接性 損失。 鋰濟部中央梂準局—工消費合作社印製 (請先閲讀背面之注ί項再填寫本頁) 此外，若加以考慮因製程室內之污染擴散而使離子佈 植裝備之淸洗範圍擴大所導致再恢復運作所需時間（裝備 之停機時間）與入力之損失，則其損失金額勢必以幾何級 數增大。 換言之，就以往之顆粒測定方法而言，每一次顆粒測 試須消耗裸晶圓，且在測定時間之間須停頓進行中之製 程，而招致設備利用效率之損失以及經濟上損失，就結果 來說，是導致製品生產性之低落。 ’ -5 - 本紙铁尺度適用中國两家椹準（CNS ) Α4规格（2丨0X297公釐） Α7 _， _Β7 _ 五、發明説明（4 ) 又以往之顆粒測定裝置，對顆粒測定並無格外之實 效，不但影響製品產置及品質降低，亦有危及有關安全上 事故之虞。 解決問題之方法 本發明旨在消除上述問題，提供一種在離子佈植器之 製程室內進行製程時，不必使用另備之測試用晶圓亦能測 定顆粒而予以構成，使得設備利用效率及產量得以提高下 能正確地掌握顆粒所引起製程室內之污染程度之屬於新穎 型態之離子佈植器污染測定系統。 本發明之另一目的在於提供一種態夠不使用按週期測 定之方式而可按製程進行中之各批童（batch)予以監控， 俾預防諸如因晶圓龜楚或破損所引起顆粒之急劇增加等突 發生製程室內之污染所導致製程失敗，或其他（飛出離子 之漏泄）原因所發生事故之新穎方式之離子佈植器污染測 定方法。 經濟部中央橾準局真工消费合作社印装 (請先閱讀背面之注意Ϋ項再填寫本頁) 爲達成上述目的，本發明係在將複數個晶圓固定在製 程室內廣設置圓板之狀態下邊以一定速度旋轉邊佈植離子 之高離子佈植器中，具有一感測裝置，固定設置在相當於 該製程室上部位置之圓板支撐架之一側邊上段，用於檢測 製程室內之顆粒並將之以電氣信號輸出，一控制裝置，控 制該感測裝置之動作，以及一輸出裝置，接收來自該感測 裝置之輸出信號而輸出顆粒大小與數量。 -6 - 本紙張尺度逋用中國國家梯準（CNS ) Α4規格（210X297公釐） 經濟部中央梂準局—工消費合作杜印«. A7 B7 五、發明説明（5 ) 如上述之本發明之感測裝置係使用原地顆粒監視 (ISPM; in-situ particle moni_tering)感測器。 如上述之本發明中該輸出裝置係令顆粒檢測訊息輸出 於監控器或掃筆式示波器，或同時輸出於監控器和掃筆式 示波器而構成。 爲達成本發明之另一目的，本發明之污染測定方法係 在包括：裝載晶圓之步驟，將經裝載之晶圓排列固定在圓 板之步驟，移動該晶圓至可佈植離子之位置（垂直狀態）之 步驟，朝規定方向邊旋轉該圓板邊在該圓板所固定之晶圓 上佈植離子之步驟，經佈植離子後將圓板移回原先位置 (水平狀態）以便卸下晶圓之步驟，以及自圓板卸下晶圓之 步驟之離子佈植製程中，其特徵在於將晶圓排列固定在圓 板之步驟後，開始進行丨p程室內之顆粒感測動作，緊接於 爲卸下晶圓而將圓板移回原先位置之步驟*就結束感測動 作考。 根據上述本發明之構成和方法，由於可正確地測定離 子佈植器中因顆粒所造成製程室內部之污染實態，並將該 製程室之內部狀況按批量分開予以監控·檢査，所以可提 高信賴性。 以下，配合所附圖面將本發明之較佳實施例及作用以 及效果詳細加以說明。 根據本發明實施例之離子佈植器之污染測定系統，其 特徵係在製程室內設置感測裝置以感測顆粒之大小和數 量，而將由該感測裝置輸出之電氣信號作爲輸出手段而予 本纸伕尺度適用中B國家梂準（CNS ) A4規格（2丨.〇><297公釐） /1‘-- (請先閱讀背面之注f項再填寫本頁) 訂 經濟部中央標準局爲工消费合作社印製 Α7 _ζ_Β7_ 五、發明説明（ό ) 以輸出，俾能更正確地測定因製程進行中之顆粒所造成製 程室內之污染程度者。 高離子佈植器（high inplanter)係自離子源產生離 子束而在離子線路加速能量後植入位於圓板上之晶圓表面 而構成。Si Coffee 2 A7 B7 5. Description of the invention (3) It can test the defects of the device caused by the sudden process room pollution that may occur between the inspection cycles. In addition, accidents that occur occasionally during the process, such as the sudden increase of particles caused by wafer cracking or damage, are caused by sudden process indoor pollution caused by process failure, or other (leakage of flying ions) and other accidents. The abnormal situation can not be monitored, so it will inevitably lead to process failure. In the past, there has never been a method that can sense the sudden contamination status of the process chamber as described above and respond to it, resulting in continuous process failure that continues until the inspection cycle of the device. If the degree of contamination can be visually detected by the manager during the inspection cycle, the contamination of the process chamber and wafers has been expanded to an extent. As mentioned above, the scale of economic loss, even if 13 wafers are loaded simultaneously in a process and the process is assumed, and it is assumed that this process takes about one hour, it will also cause the direct loss of wafer defects per unit time. Sexual loss. Printed by the Lithuanian Ministry of Industry, Central Bureau of Industry and Consumer Cooperatives (please read the notes on the back and then fill out this page). In addition, if the diffusion of ion implantation equipment due to pollution diffusion in the process chamber is taken into consideration As a result of the time required to resume operation (equipment downtime) and the loss of force, the amount of loss is bound to increase geometrically. In other words, as far as the conventional particle measurement method is concerned, each particle test must consume bare wafers, and the ongoing process must be paused between the measurement times, which incurs a loss of equipment utilization efficiency and economic loss. In terms of results It is the result of a decline in product productivity. '-5-This paper iron scale is suitable for two Chinese standards (CNS) Α4 specifications (2 丨 0X297 mm) Α7 _, _Β7 _ 5. Description of the invention (4) And the conventional particle measurement device, no special measurement of particles The actual effect not only affects the production and quality of products, but also may endanger related safety accidents. Solution to Problem The present invention aims to eliminate the above-mentioned problems, and provides a method for measuring particles without using additional test wafers when performing processes in the process chamber of the ion implanter, so that equipment utilization efficiency and output can be achieved It is a novel type of ion implanter pollution measurement system that can accurately grasp the degree of pollution in the process chamber caused by particles. Another object of the present invention is to provide a method that can be monitored according to batches in the process without using the periodic measurement method, so as to prevent the sharp increase of particles caused by wafer cracks or damage. A novel method for measuring the contamination of ion implanters due to the occurrence of pollution in the process room caused by sudden process failure or other (leakage of flying ions). Printed and printed by the Real Industry Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs (please read the note Ϋ on the back and then fill out this page). To achieve the above purpose, the present invention is in the state where a plurality of wafers are fixed in the process room and a round plate is widely installed The high-ion implanter that rotates and implants ions at a certain speed at the lower side has a sensing device, which is fixedly arranged on the upper side of one side of the circular plate support frame corresponding to the upper position of the process chamber, and is used to detect the process chamber. The particles are output as electrical signals, a control device controls the operation of the sensing device, and an output device receives the output signal from the sensing device to output the particle size and number. -6-This paper uses the Chinese National Standard (CNS) Α4 specification (210X297 mm). The Central Bureau of Economic Affairs of the Ministry of Economic Affairs-Industrial and Consumer Cooperation Du. «A7 B7 V. Description of the invention (5) The invention as described above The sensing device uses an in-situ particle monitoring (ISPM; in-situ particle moni_tering) sensor. As described above, in the present invention, the output device is configured to output the particle detection information to the monitor or the pen-type oscilloscope, or to simultaneously output the monitor and the pen-type oscilloscope. In order to achieve another object of the invention, the pollution measurement method of the present invention includes the steps of loading a wafer, arranging and fixing the loaded wafer on a circular plate, and moving the wafer to a position where ions can be implanted. (Vertical state) Steps: Rotate the disk in the specified direction to plant ions on the wafer fixed by the disk. After implanting the ions, move the disk back to the original position (horizontal state) for unloading In the ion implantation process of the step of lowering the wafer and the step of unloading the wafer from the circular plate, it is characterized in that after the step of arranging and fixing the wafer on the circular plate, the particle sensing operation in the chamber is started. Immediately after the step of moving the circular plate back to the original position for unloading the wafer *, the sensing action test is ended. According to the above-mentioned constitution and method of the present invention, since it is possible to accurately measure the actual pollution state inside the process chamber caused by particles in the ion implanter, and to monitor and inspect the internal conditions of the process chamber in batches, it can be improved. Trustworthiness. In the following, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The pollution measuring system of the ion implanter according to the embodiment of the present invention is characterized in that a sensing device is provided in the process chamber to sense the size and number of particles, and the electrical signal output by the sensing device is used as the output means. The paper scales are applicable to the B4 National Standard (CNS) A4 specifications (2 丨 .〇 < 297mm) / 1 '-(please read note f on the back and then fill in this page) The Bureau of Standards printed Α7 _ζ_Β7_ for industrial and consumer cooperatives. V. Description of invention (ό) for output, so as to more accurately determine the degree of pollution in the process chamber caused by particles in the process. A high ion planter is formed by generating an ion beam from an ion source and implanting it on the surface of the wafer on the circular plate after the acceleration energy of the ion circuit.
經測試如上述之製程，結果顯示在製程室內離子束經 生成而具有能童下通過離子線路以植入晶圓表面之路徑中 離子束之童和大小，係和離子佈fit器中所發生之顆粒數目 成比例，又其數量爲比離子束未存在之狀態下存在於設備 內之顆粒數目大致高達數倍至數十倍之鉅V 本發明則予構成爲不必因測定顆粒而中斷製程亦可在 佈植離子之製程進行中對製程室內之顆粒污染加以管理。 圖1爲表示設有根據本發明污染測定系統之離佈植器 之整體構造平面圖，圖2爲表示離子佈植器製程室內之顆 粒感測裝置之安裝狀態側面圖。 上述離子佈植器大致係由將晶圖（100)移送至製程室 (40)內部之裝載部（10)，將固定了所裝載晶圓（]〇〇)之 圓板驅動成可植入離子狀態之驅動部（20)，以及用來產 生所需要之離子並予以植入晶圖（1〇〇)表面之離子佈植部 (30)所構成。 並且，具備其他諸如用來維持製程室（4〇)內部之高 眞空狀態所需之眞空泵等》 上述裝載部（10)將經由升降機（M)裝載在盒子（12) 之晶圓（100)藉由晶圓手臂（14)逐一裝設於圓板（21)β 本紙張尺度逍用中國國家標準（CNS ) A4规格（2丨〇><297公着） ----------ΟΙ- (請先閱讀背面之注f項再填寫本I) 訂 經濟部中央梯準局負工消费合作社印«. A7 B7 _、 _ — 五、發明説明（7 ) 上述圓板（21)—次可裝載13片晶圓（100)同時進行 製程，因而，將此13片晶圖稱爲一批量（batch)。 另一方面，上述離子佈植器（30)係由可產生離子束 之束源（3 1)，用來搬送由該束源（3 1)產生之離子束之離 子路線（3 2)，以及以設置在該離子路線（3 2)出口端部分 之狀態下將所搬送之離子束植入於固定在該圓板（2 1)上 之晶圓（1 〇 〇 )之束閘（3 3 )所構成》 固定有晶圓（1〇〇)之圓板（21)，如圖2所示，係以由 水平狀態豎立成垂直之狀態下藉驅動電動機（23)之驅動 力來高速旋轉，與此同時，離子束即自該束閘（3 3)射出 而對圓板（2 1)上之各晶圓（1 00)全面佈植離子。 圖3爲表示根據本發明之離子佈植器之污染測定系統 之槪念方塊構成圖，而本發明之離子佈植器之污染測定系 統係在具有上述構成之離子佈植器中，包括：固定在製程' 室（40)內之感測裝置（50)，用來控制此感測裝置（50)之 控制裝置（7 0 )，以及可將由該感測裝置（5 0 )所感測之感 測信號輸出到製程室（40)外部之輸出裝置（60)。 ,上冰感測裝置（50)係在圓板（2 1)之支撐架（22)固定 成爲了佈植離子而將裝設了晶圓（100)之圖板（21)豎立成 垂直而旋轉時無論圓板（21)之旋轉亦能經常位於圓板上 部。 如上述之本發明之感測裝置（50)，係使用於檢測顆 粒時所使用之ISPM(原地顆粒監視，In-situ particle monitering)感測器。 本纸铁尺度逍用中國國家揲準（CNS ) A4規格（2I0X297公釐） (請先闖讀背面之注$項再填寫本頁) 訂After testing the process as described above, the results show that the ion beam generated in the process chamber has the size and size of the ion beam in the path that can be implanted into the wafer surface through the ion circuit, which is what happened in the ion cloth fitter. The number of particles is proportional, and the number is larger than the number of particles present in the device in the absence of the ion beam, which is approximately as high as several times to tens of times. V The present invention is configured so that it is not necessary to interrupt the process due to the measurement of particles Manage particle contamination in the process chamber during the process of ion implantation. Fig. 1 is a plan view showing the overall structure of an ion implanter provided with a pollution measurement system according to the present invention, and Fig. 2 is a side view showing the installation state of a particle sensing device in a process chamber of an ion implanter. The above-mentioned ion implanter is roughly driven by transferring the crystal pattern (100) to the loading part (10) inside the process chamber (40), and driving the circular plate holding the loaded wafer () 〇〇) into implantable ions The driving part (20) in the state and the ion implantation part (30) for generating the required ions and implanting them on the surface of the crystal pattern (100). In addition, it is equipped with other vacuum pumps required to maintain the high vacuum state inside the process chamber (40). The above-mentioned loading section (10) will load wafers (100) on the cassette (12) via the elevator (M) By wafer arm (14) one by one installed on the circular plate (21) β This paper standard is free to use the Chinese National Standard (CNS) A4 specification (2 丨 〇 < 297 public) ------- --- ΟΙ- (Please read note f on the back and then fill in this I) Order the Ministry of Economic Affairs Central Equatorial Bureau Negative Work Consumer Cooperative Seal «. A7 B7 _, _ — V. Invention description (7) The above circular plate ( 21)-13 wafers (100) can be loaded at the same time for the process, so this 13 wafer pattern is called a batch. On the other hand, the above-mentioned ion implanter (30) is a beam source (3 1) capable of generating an ion beam, and is used to transport the ion path (32) of the ion beam generated by the beam source (31), and Implanting the transported ion beam into the beam gate (3 3) of the wafer (1 00) fixed on the circular plate (2 1) in the state of being provided at the exit end portion of the ion path (3 2) Composition> The circular plate (21) to which the wafer (100) is fixed, as shown in FIG. 2, is rotated at a high speed by the driving force of the driving motor (23) in a state of being erected from a horizontal state to a vertical state, and At the same time, the ion beam is emitted from the beam gate (3 3) to fully implant ions on each wafer (100) on the circular plate (21). FIG. 3 is a block diagram showing the structure of the contamination measuring system of the ion implanter according to the present invention, and the pollution measuring system of the ion implanter of the present invention is included in the ion implanter having the above-mentioned configuration, including: fixing A sensing device (50) in the process' room (40), a control device (70) for controlling the sensing device (50), and a sensing device that can be sensed by the sensing device (50) The signal is output to the output device (60) outside the process chamber (40). , The ice-sensing device (50) is fixed on the support frame (22) of the circular plate (21) to become implanted ions, and the drawing board (21) on which the wafer (100) is installed is erected vertically and rotated No matter the rotation of the circular plate (21), it can always be located at the upper part of the circular plate. The sensing device (50) of the present invention as described above is an ISPM (In-situ particle monitering) sensor used for detecting particles. The iron standard of this paper is the Chinese National Standard (CNS) A4 (2I0X297mm) (Please read the note $ item on the back and fill in this page)
C 經濟部中夫梯準局員工消费合作社印装 316332 A7 B7 五、發明説明（8 ) 上述控制裝置（70)係藉由用於控制離子佈植裝備整 體動作之主要控制裝置來選擇控制時期以便動作。 圖4 A係在本發明作爲感測裝置而使用之ISPM感測 器之顆粒檢測原理說明圖。 上述顆粒測定方法係由設置在製程室內用來裝載晶圓 (1〇〇)之圓板（21)上部之顆粒感測裝置（50)來測定。 上述顆粒感測裝置（50)係於離子佈植製程時，使用 雷射二極管（5 1)將雷射光照射製程室內（40)內顆粒與該 雷射光束衝突而繞射之光，並以電氣信號輸出。 圖4 B係表示爲使來自上述感測裝置之感測信號可供 加以監控而自輸出裝置輸出其訊息之一例，其中隨著時間 經過所畫出波長數目係表示所檢測出之顆粒數量，波長之 大小係表示顆粒大小。 圖5爲表示用來說明具有上述構成之本發明污染測定 過程之製程進行圖。 (污染測定之實施例） .污染測定係與一般性離子佈植製程同樣地在進行： 在製程室內裝載晶圓（100)之步驟（S1)，將經裝載 之晶圓排列固定在圓板（21)之步驟（S2)，爲了佈植離子 而將該圓板（21)豎立成垂直之步驟（S3)，將離子佈植在 晶圓之步驟（S4)，經佈植離子後將圓板移回原先位置以 便卸載晶圓之步驟（S5)，以及從圓板卸下晶圓之步驟（S6) 時，實行上述顆粒之檢測。 ' -10- 本纸張尺度適用中國困家操準（CNS ) Α4Λ#· ( 210X297公釐） ----------OI- (請先閏讀背面之注$項再填寫本頁) 訂 ' —^1 —^1 .§^1 A7 一 B7 ~~ ~ · _ 五、發明説明（9 ) (請先Μ讀背面之注$項再填寫本頁) 經分析上述各製程步驟中所檢測顆粒量後，得知在爲 了佈植離子而將圓板豎立成垂直之步驟（S3)與佈植離子 結束而將圓板移回原先位置以便卸載晶圓之步驟（S5)間 之製程中，在製程室（40)內檢測到較多的顆粒。 因此，如欲獲致正確的製程室（40)內顆粒之測定結 果，則在爲佈植離子之步驟（S 4)當然不用說，連在爲了 佈植離子而將圓板（21)豎立成垂直之步驟（S2)與離子經 佈植結束後將圓板（2 1)移回原先位置之步驟（S5)也應實 施。 爲了有效地管理顆粒，本發明係在上述製程步驟中， 於圓板（21)動作成可佈植離子狀態之前之S2步驟與S3步 驟之間，開始顆粒之感測動作，且於結束佈植離子後，在 圓板（21)復歸至原先位置後之S5步驟與S6步驟之間結束 該感測動作。 發明之效果 趣濟都t夬棣準局員工消驚合作社印t 因此，與進行離子佈植製程同時由運作上述感測裝置 (f〇)所檢測到之資料，係以輸出裝置（6 0)以監視器或掃 筆式示波器輸出以供管理者加以監控之用。 如上述，利用由輸出裝置（60)所輸出和圖4B之資 料即可按每一批量掌握製程室內顆粒之大小及數量。 由如此結果所得依大小分類之顆粒數量，可加以管制 在製程室內之允許範圍內，其數値若超過允許範圍之情形 本紙伕尺度適用中國困家搞準（CNS ) A4规格（210X297公釐） 經濟部中央揉準局員工消費合作社印装 A7 B7 五、發明説明（i 0 ) 時，亦可藉警報裝置發出警報以供管理者掌握裝備之異常 與否。 由於測定因顆粒造成之製程室內污染狀態之動作，係 與離子佈植器之製程同時進行，所以可正確地測出製程進 行中之製程室內顆粒，且亦可立刻因應突發性事故。 若適用本發明，則有下列優點： 其一爲由於不再需要爲了測試製程室內之顆粒而使用 裸晶圓，所以可消除每次測定顆粒所耗之晶圓浪費，可節 省成本。 其二爲由於在不中斷設備運作下得以測定顆粒污染， 所以可提高離子佈植器之運轉效率和顆粒測定之可靠度。 其三爲由於可在不中斷離子佈植佈植設備而繼續運作 之狀態下得以實施顆粒測定，而且可按製程進行批童分別 測試顆粒狀態，所以可提高產品品質。 綜之，本發明由於能與進行離子佈置製程同時進行測 定污染，所以具有提高裝備之運轉效率，亦可提高產量和 製品品質之優點。 # 圖示之簡單說明 圖1爲表示設置了根據本發明污染測定系統之離子佈 植器之整體構造平面圖。 圖2爲表示在離子佈植器製程室內之顆粒感測裝置之 安裝狀態側面圖。 -12- 本紙張尺度逍用中國國家梂準（CNS ) A4规格（210X297公釐） 〇------1T------C— (請先閲讀背面之注意事項再填寫本頁) 316232 A7 _一 ._B7_ 五、發明説明（1 1 ) 圖3爲表示根據本發明之離子佈植器污染測定系統之 槪念構成方塊圖。 圖4 A爲表示作爲本發明之感測裝置而使用之ISPM 感測器之顆粒檢測原理之槪略構成圖。 圖'4 B爲表示根據本發明感測裝置之感測信號由輸出 _裝置輸出之一例圖表。 圖5爲表示根據本發明之污染測定方法之製程進行 圖。 圖6爲表示以往之離子佈植器之顆粒檢測過程之製程 進行圖》 符號說明 ----------OI (請先閲讀背面之注$項再填寫本頁) 10.. ...裝載部 2 0.. ...驅動部 2 1.. ...圓板 22... ...圓板支撐架 3 0.. ...離子佈植部 40... ..製程室 5 0... ...感測裝置 60… ..輸出裝置 7 0... ..控制裝置 C· 經濟部中央梂準局真工消費合作社印«. • m 本紙張尺度逍用中國國家揉率（CNS ) A4规格（210X297公釐）C Printed by 316332 A7 B7, Employee Consumer Cooperative of the Ministry of Economic Affairs of the Central Huftie Bureau 5. Description of the invention (8) The above control device (70) is selected by the main control device used to control the overall operation of the ion implantation equipment so that action. Fig. 4A is an explanatory diagram of the particle detection principle of the ISPM sensor used in the present invention as a sensing device. The above particle measurement method is measured by the particle sensing device (50) provided on the upper part of the circular plate (21) for loading the wafer (100) in the process chamber. The above-mentioned particle sensing device (50) is used in the ion implantation process, and the laser diode (51) is used to irradiate the laser light with the laser beam (40) in the process chamber (40). Signal output. Fig. 4 B shows an example of outputting the message from the output device in order to make the sensing signal from the above-mentioned sensing device available for monitoring, wherein the number of wavelengths drawn over time represents the number of detected particles and the wavelength The size indicates the particle size. Fig. 5 is a diagram showing a process for explaining the pollution measurement process of the present invention having the above-mentioned constitution. (Example of pollution measurement). The pollution measurement is carried out in the same way as the general ion implantation process: the step (S1) of loading wafers (100) in the process chamber, and aligning the loaded wafers on the circular plate ( 21) Step (S2), the step of standing the disc (21) vertically to implant ions (S3), the step of implanting ions on the wafer (S4), after implanting ions, the disc In the step of moving back to the original position to unload the wafer (S5) and the step of unloading the wafer from the circular plate (S6), the above particle detection is performed. '-10- This paper scale is applicable to China's Sleepy Family Practice Standard (CNS) Α4Λ # · (210X297mm) ---------- OI- (please read the note $ item on the back before filling in this Page) Order '— ^ 1 — ^ 1 .§ ^ 1 A7 A B7 ~~ ~ · _ V. Description of the invention (9) (please read the $ item on the back and then fill in this page) After analyzing the above process steps After detecting the amount of particles in the process, it is known that between the step (S3) of erecting the circular plate for the purpose of ion implantation (S3) and the step of returning the disc to the original position after the ion implantation (S5) During the process, more particles were detected in the process chamber (40). Therefore, if you want to obtain the correct measurement results of the particles in the process chamber (40), of course, it is needless to say that in the step of implanting ions (S 4), even the circular plate (21) is erected vertically for implanting ions The step (S2) and the step (S5) of moving the circular plate (21) back to the original position after the ion implantation is completed should also be implemented. In order to effectively manage the particles, the present invention is to start the sensing operation of the particles between the steps S2 and S3 before the circular plate (21) moves to the ion implantable state in the above process steps, and end the implantation After the ionization, the sensing operation ends between steps S5 and S6 after the circular plate (21) returns to the original position. The effect of the invention is interesting. The employees of the Ministry of Economic Affairs and Technology are surprised that the cooperative has printed it. Therefore, the data detected by the operation of the above-mentioned sensing device (f〇) at the same time as the ion implantation process is output by the output device (60) Use monitor or pen-type oscilloscope output for supervisor to monitor. As described above, using the data output by the output device (60) and FIG. 4B, the size and number of particles in the process chamber can be grasped for each batch. The number of particles classified according to the size obtained from this result can be controlled within the allowable range of the process room. If the number exceeds the allowable range, the paper scale is applicable to the China Aided Standards (CNS) A4 specification (210X297 mm) A7 B7 is printed by the Employees Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs. 5. When the description of the invention (i 0), the alarm device can also be used to issue an alarm for the manager to grasp whether the equipment is abnormal. Because the action of measuring the indoor pollution state caused by particles is performed simultaneously with the process of the ion implanter, the particles in the process of the process in the process can be accurately measured, and it can also respond to sudden accidents immediately. If the present invention is applied, it has the following advantages: One is that since bare wafers are no longer required for testing the particles in the process chamber, the waste of wafers consumed for each particle measurement can be eliminated, and costs can be saved. The second is that the particle pollution can be measured without interrupting the operation of the equipment, so the operation efficiency of the ion implanter and the reliability of particle measurement can be improved. The third is that the particle measurement can be carried out without interrupting the ion implantation planting equipment and continuing to operate, and the particle state can be tested separately according to the process, so the product quality can be improved. In summary, the present invention has the advantages of improving the operation efficiency of equipment, as well as improving the output and product quality, because it can measure pollution simultaneously with the ion layout process. # BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing the overall structure of an ion implanter provided with a pollution measurement system according to the present invention. Fig. 2 is a side view showing the installation state of the particle sensing device in the process chamber of the ion implanter. -12- The size of this paper is easy to use China National Standards (CNS) A4 (210X297mm) 〇 ------ 1T ------ C— (Please read the precautions on the back before filling this page ) 316232 A7 _ 一 ._B7_ V. Description of the invention (1 1) FIG. 3 is a block diagram showing the composition of the concept of the ion implanter pollution measurement system according to the present invention. 4A is a schematic diagram showing the principle of particle detection of an ISPM sensor used as the sensing device of the present invention. FIG. 4B is a graph showing an example of the output of the sensing signal of the sensing device according to the present invention from the output device. Fig. 5 is a diagram showing the production process of the pollution measurement method according to the present invention. Figure 6 is a diagram showing the process of the particle detection process of the conventional ion implanter. Symbol description -------- OI (please read the note $ item on the back and fill in this page) 10. .. Loading section 2 0 .. ... Drive section 2 1 .. ... Round plate 22 ... ... Round plate support frame 3 0 .. ... Ion implantation section 40 ... .. Process room 5 0 ... ... sensing device 60 ... .. output device 7 0 ... .. control device C. Printed by the Ministry of Economic Affairs Central Bureau of Industry and Commerce Consumer Cooperative Society «. China National Kneading Rate (CNS) A4 Specification (210X297mm)