TW302525B - - Google Patents

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Publication number
TW302525B
TW302525B TW085101456A TW85101456A TW302525B TW 302525 B TW302525 B TW 302525B TW 085101456 A TW085101456 A TW 085101456A TW 85101456 A TW85101456 A TW 85101456A TW 302525 B TW302525 B TW 302525B
Authority
TW
Taiwan
Prior art keywords
film
dielectric
patent application
silicon
semiconductor substrate
Prior art date
Application number
TW085101456A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW302525B publication Critical patent/TW302525B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6686—
    • H10W20/071—
    • H10W20/48—
    • H10W70/69—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/6924—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW085101456A 1995-02-28 1996-02-06 TW302525B (esLanguage)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3968795 1995-02-28

Publications (1)

Publication Number Publication Date
TW302525B true TW302525B (esLanguage) 1997-04-11

Family

ID=12559985

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101456A TW302525B (esLanguage) 1995-02-28 1996-02-06

Country Status (5)

Country Link
EP (1) EP0730298A3 (esLanguage)
KR (1) KR960032507A (esLanguage)
CN (1) CN1139819A (esLanguage)
SG (1) SG44710A1 (esLanguage)
TW (1) TW302525B (esLanguage)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178375B2 (ja) * 1997-06-03 2001-06-18 日本電気株式会社 絶縁膜の形成方法
US5869149A (en) * 1997-06-30 1999-02-09 Lam Research Corporation Method for preparing nitrogen surface treated fluorine doped silicon dioxide films
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6717181B2 (en) 2001-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having thin film transistor
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
US7074489B2 (en) * 2001-05-23 2006-07-11 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
EP1271643A1 (en) 2001-06-22 2003-01-02 Infineon Technologies AG A method of forming a bitline and a bitline contact and a dynamic memory cell
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
CN113892153B (zh) * 2019-07-09 2024-10-11 株式会社村田制作所 薄膜电容器以及薄膜电容器用薄膜
CN114394597A (zh) * 2022-01-24 2022-04-26 贵州理工学院 一种利用四氟化硅为原料制备硅薄膜的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
DE69311184T2 (de) * 1992-03-27 1997-09-18 Matsushita Electric Ind Co Ltd Halbleitervorrichtung samt Herstellungsverfahren

Also Published As

Publication number Publication date
EP0730298A2 (en) 1996-09-04
SG44710A1 (en) 1997-12-19
CN1139819A (zh) 1997-01-08
KR960032507A (ko) 1996-09-17
EP0730298A3 (en) 1998-04-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees