TW298704B - - Google Patents

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Publication number
TW298704B
TW298704B TW084102573A TW84102573A TW298704B TW 298704 B TW298704 B TW 298704B TW 084102573 A TW084102573 A TW 084102573A TW 84102573 A TW84102573 A TW 84102573A TW 298704 B TW298704 B TW 298704B
Authority
TW
Taiwan
Prior art keywords
substrate
etching
main surface
wafer
gas
Prior art date
Application number
TW084102573A
Other languages
English (en)
Chinese (zh)
Inventor
Makoto Hasegawa
Original Assignee
Tokyo Electron Co Ltd
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03364594A external-priority patent/JP3257741B2/ja
Application filed by Tokyo Electron Co Ltd, Toshiba Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW298704B publication Critical patent/TW298704B/zh

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  • Drying Of Semiconductors (AREA)
TW084102573A 1993-12-29 1995-03-17 TW298704B (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34983293 1993-12-29
JP03364594A JP3257741B2 (ja) 1994-03-03 1994-03-03 プラズマエッチング装置及び方法

Publications (1)

Publication Number Publication Date
TW298704B true TW298704B (ja) 1997-02-21

Family

ID=51565514

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102573A TW298704B (ja) 1993-12-29 1995-03-17

Country Status (1)

Country Link
TW (1) TW298704B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977126A (zh) * 2011-05-31 2016-09-28 应用材料公司 用于等离子体蚀刻腔室的孔部件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977126A (zh) * 2011-05-31 2016-09-28 应用材料公司 用于等离子体蚀刻腔室的孔部件

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