TW298659B - - Google Patents
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- TW298659B TW298659B TW84111576A TW84111576A TW298659B TW 298659 B TW298659 B TW 298659B TW 84111576 A TW84111576 A TW 84111576A TW 84111576 A TW84111576 A TW 84111576A TW 298659 B TW298659 B TW 298659B
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- boiling point
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- aliphatic hydrocarbons
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description
五、發明説明( A7 B7 έ 年 15 f1 % t 〔產業上之利用領域〕 本發明係有關一種半導體晶圓 以及使用該包装容器之半導體晶圓 在維持清淨度之狀態下耐長期保存 器。 〔習用技術之說明〕 迄今為上,半導體晶圓用之包 之盒體與聚碳酸酯製之蓋體所構成 丙稀製之半専體晶圓用載架。 此一包装容器,係採用藉由減 成份·而減少對於晶圓表面之有機 〔發明之解決課題〕 然而,當在此容器内收納半導 度時·會有半導體晶圓表面污染之 這是因為,洗淨後之半導體晶 性高•因此,會成為易於吸附離子 装容器内有懺氣髖之分壓低,故而 外部亂源的影響。 如此•當在習用之包裝容器内 長時間經過後*異物會吸附於晶圓 良影響,而有斥水(與水之接觸角 本發明係有鑑上述實情開發而 一種在長期保存下,與水之接觸角 用包装容器及其製法· 保管方法,尤指一種可 之半導體晶圓用包裝容 装容器,係由聚丙烯製 ,該盒體内部收容有聚 少出自容器材質之揮發 物污染的方法。 想晶圓經過10◦天程 問題。 圓表面係屬活性,反應 性雜霣等之狀況,而包 易於遭受有機污染此一 保管清淨之晶片時,在 表面•而對晶圓造成不 增大)之問鼷。 成者,其目的係在提供 不會坩大•而可維持清 (請先閱讀背面之注意事項再填寫本页)V. Description of the invention (A7 B7) 15 f1% t [Industrial application field] The present invention relates to a semiconductor wafer and a semiconductor wafer using the packaging container, which are resistant to long-term storage while maintaining cleanliness. [ Description of conventional technology] Up to now, the semiconductor wafer wafer package and the polycarbonate cover constitute the acrylic half-wafer wafer carrier. This packaging container is used by Reduce the composition and reduce the organic on the surface of the wafer [Problem to solve the invention] However, when the semiconductivity is stored in this container, there will be contamination of the surface of the semiconductor wafer. This is because the crystallinity of the semiconductor after cleaning is high • As a result, it will become easy to absorb ion. The partial pressure of the hip in the container is low, so it is affected by the external source of disturbance. So • When a long time passes in the conventional packaging container, * foreign objects will be adsorbed on the wafer. Water repellent (contact angle with water The present invention was developed based on the above facts and a packaging container for contact angle with water under long-term storage and its manufacturing method and storage method, especially a kind of The packaging container for semiconductor wafers is made of polypropylene, and the inside of the box contains a method of contaminating volatiles from the material of the container. I want the wafer to pass the 10◦ day problem. The round surface is active. Reactive hybrids, etc., and the package is susceptible to organic contamination. When the clean wafers are stored, the surface will not increase the wafer). The purpose of the creator is to provide no crucibles. • Can be kept clear (please read the notes on the back before filling this page)
本纸浪尺度適用中國國家標準(CNS ) A4規格(210X29·?公釐) A7 B7 五、發明説明(二) 淨度之半導體晶圓包装容器。 〔課題之解決手段〕 是K,本發明係藉由增大密封型容器内之低沸點有櫬 成份的比例*而減少易於殘留於半導體晶圓表面之高沸點 有機成份的蒸氣壓。又,藉由Μ低沸點之有摑成份被覆低 沸點有機成份,可抑制與易於殘留之高沸點有機成份的接 觸,謀求減少有櫬物之Β染。 具體言之•根據本發明,與由容器及蓋體所構成之密 封性包裝容器的晶片直接接觸之部份,係由經脫氣處理之 樹脂所櫞成,其他部份之至少内壁面,係經施以可積極產 生低分子量有機氣髖之處理。 本發明之第1發明的半導體晶園用包装容器,係由容 器本»及蓋體所構成,其内部係以密閉狀態收容半導體晶 圓;其特徵係在: 上述包装容器之内部空間内*封入有碳數目為6〜8 程度之脂族烴或沸點1 0 OCM下之酵類者。 本發明之第2發明的半導體晶圓用包装容器·係由容 器本體及蓋體所構成•其内部係Μ密閉装置收納半導《晶 圓;其特戡係在: 至少上述容器本體係由含有碳數目為6〜8程度之脂 族烴或沸點為1ΟΟΌΜ下之醇類的樹脂所嫌成者。 上述樹脂之基材*宜使用聚丙烯、聚乙烯、聚碳酸_ 本紙伕尺度適用中國國家標準(CNS ) Α4規格(210X 297公釐) (請先閲讀背面之注意事項再填寫本頁)This paper wave scale is applicable to China National Standard (CNS) A4 specification (210X29 · mm) A7 B7 V. Invention description (2) Clarity semiconductor wafer packaging container. [Solution to the problem] It is K. The present invention reduces the vapor pressure of high-boiling-point organic components that tend to remain on the surface of semiconductor wafers by increasing the ratio of low-boiling-point components in sealed containers *. In addition, by covering low-boiling organic components with low-boiling organic components, contact with high-boiling organic components that are likely to remain can be suppressed, and it is possible to reduce the contamination of contaminants. Specifically, according to the present invention, the part directly in contact with the wafer of the sealed packaging container composed of the container and the lid is made of degassed resin, and at least the inner wall surface of the other parts is After treatment, it can actively produce low molecular weight organic gas hips. The packaging container for a semiconductor crystal garden according to the first invention of the present invention is composed of a container book and a lid body, and the semiconductor wafer is housed in a sealed state inside; the characteristic is that: the inner space of the packaging container * is enclosed There are aliphatic hydrocarbons with a carbon number of 6 to 8 or enzymes with a boiling point of 10 OCM. A packaging container for semiconductor wafers according to the second invention of the present invention is composed of a container body and a lid body. The inside thereof is a sealed device for storing a semi-conducting wafer; its special system is: at least the above-mentioned container Resin suspected of aliphatic hydrocarbons with a carbon number of 6 to 8 or alcohols with a boiling point of 100 ΌΜ. The base material of the above resins * It is better to use polypropylene, polyethylene, polycarbonate _ The paper size is applicable to China National Standard (CNS) Α4 specification (210X 297mm) (please read the precautions on the back before filling this page)
A7 B7 五、發明説明(3 ) 本發明之第3發明的半導體晶圓用包装容器,係由容 器本體及蓋體所構成,其内部係Μ密閉狀態收納半導體晶 圓;其特徵係在: 上述半導體晶園用包装容器之内部空間内*封入有由 含浸有碳數目為6〜8程度之脂族烴或沸點1 OOCM下 之酵類的樹脂所構成,且可產生低沸點有懺成份之蒸發源 〇 本發明之第4發明,係半導趲晶圓用包裝容器之製法 •其特激係在: 此製法包括: 一藉由利用正己烷之液相法•引發交瞄反懕,而形成 聚丙烯樹脂之過程;Μ及 一由上述聚丙烯樹脂形成丸粒,藉由將該九粒成形· 而成形成由容器本體及蓋體所構成,内部以密閉狀態收容 半導體晶圓的容器之成形遇程。 本發明之第5發明,係半専《晶圃用包装容器之製法 ;其特激係在: 此製法包括: —藉由氣相法,引發交聯反應,而形成聚丙烯樹脂之 過程;以及 —由上述聚丙烯樹脂形成九粒,藉由將該丸粒成形, 而成形成由容器本體及蓋《所構成,内部以密閉狀態收容 半導體晶圆的容器之成形過程。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ 297公釐) (請先s讀背面之注意事項再填寫本I) 訂 A7 B7 五、發明説明(☆) 本發明之第6發明,係半導體晶®用包装容器之製法 ;其特激係在: 此製法包括: 一由原料樹脂除去揮發有機成份之熱處理過程; 一在上述原料樹脂中添加碳數目為1 〇〜1 6程度之 脂族烴,形成丸粒之過程;以及 —铕由將上述丸粒成形,而成形成由容器本體及蓋體 所構成,内部Μ密閉狀態收容半導《晶圓的容器之成形過 程。 本發明之第7發明•係半導體晶圓用包裝容器之製法 ;其特激係在: 此製法包括: 一由^科樹脂除形成丸粒後*由該丸粒除去揮發有機 成份之熱處理過程; —將該九粒成形,而成形成由容器本體及蓋體所構成 ,内部以密閉吠態收容半導體晶圓的容器之成形過程;K 及 一至少將上述容器本體浸漬於含有碳數目為6〜8程 度之脂族烴或沸黏1 OOCK下之酵類的溶液中,將其表 面含浸碳數目為6〜8程度之脂族烴或沸點1 00Ό以下 的酵類之過程。 本發明之第8發明,係半専體晶圓用包装容器之製法 ;其特激係在: 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之·Vi意事項再填寫本頁)A7 B7 5. Description of the invention (3) The packaging container for semiconductor wafers according to the third invention of the present invention is composed of a container body and a lid body, and the inside thereof is a sealed semiconductor container; the characteristics are: The inner space of the packaging container for semiconductor crystal garden * is enclosed by resin impregnated with aliphatic hydrocarbons with a carbon number of 6 to 8 or enzymes with a boiling point of 1 OOCM, and can produce low-boiling boiling components with evaporation Source 〇 The fourth invention of the present invention is a method for manufacturing a packaging container for semiconducting wafers. The special method is as follows: This manufacturing method includes: a liquid phase method using n-hexane • Initiating cross-point reflection The process of polypropylene resin; M and a pellet formed from the above polypropylene resin, by forming the nine pellets to form a container body and a lid body, and a container in which the semiconductor wafer is housed in a sealed state Yucheng. The fifth invention of the present invention is the "Preparation Method of Packaging Containers for Crystal Garden; the special method is: The preparation method includes:-the process of forming a polypropylene resin by a cross-linking reaction initiated by a gas phase method; and -Forming nine pellets from the above-mentioned polypropylene resin, and molding the pellets to form a container consisting of a container body and a lid, and a container for holding semiconductor wafers in a sealed state inside. This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm) (Please read the precautions on the back before filling in this I) Order A7 B7 V. Description of invention (☆) The sixth invention of the invention is The manufacturing method of the packaging container for semiconductor crystals; the special methods are as follows: This manufacturing method includes: a heat treatment process of removing volatile organic components from the raw material resin; and an aliphatic group with the number of carbons in the range of 10 to 16 added to the raw material resin Hydrocarbon, the process of forming pellets; and-Europium is formed by forming the above-mentioned pellets into a container body and a lid, and a container containing semiconducting wafers in a closed state inside M. The seventh invention of the present invention is a method for manufacturing a packaging container for semiconductor wafers; the special method is as follows: This method includes: a heat treatment process in which volatile organic components are removed from the pellets after the pellets are removed from the resin; -Forming these nine pieces to form a container body and a lid body, a container forming process for containing semiconductor wafers in a closed bark state; K and one at least the container body is immersed in the number of carbon containing 6 ~ The process of immersing the aliphatic hydrocarbons of 8 degrees or the solution of enzymes under boiling viscosity of 1 OOCK to the surface of the aliphatic hydrocarbons with the number of carbons of 6 to 8 or the enzymes with boiling points below 100 Ό. The eighth invention of the present invention is a method for manufacturing packaging containers for semi-wafer wafers; its special features are: This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the back of Vi · (Please fill out this page again)
A7 B7 五、發明説明(r ) 此製法包括: 一Μ原料樹脂形成丸粒之過程; 一由該丸粒除去揮發有櫬成份之热處理過程; —將上述丸粒浸漬於含有碳數目為6〜8程度之脂族 烴或沸點1 OOtM下之酵類的溶液中,將其表面含浸碳 數目為6〜8程度之脂族烴或沸點1 ootcm下的酵類之 過程;以及 —將該九粒成形,而成形成由容器本體及蓋體所構成 ,内部Μ密閉狀態收容半専體晶圓的容器之成形過程。 本發明之第9發明,係半導體晶圆用包装容器之製法 ;其特戡係在: 此製法包括: 一將^料樹脂成形,而成形成由容器本體及蓋體所構 成,内部Κ密閉狀態收容半導髓晶圓的容器之成形過程; Μ及 一至少在上述本體内置入含有碳數目為6〜8程度之 脂族烴或沸點1 OOCK下之酵類的溶疲,在放置一定時 間後•將該溶液予Μ除去之過程。 本發明之第1 0發明,係半導«晶圓保管方法;其持 激係在: 此製法包括: —在容器本體内排列半等粗晶圓之遇程; 一在上述容器本體上載置與其相符之蓋«•並將該容 本紙张尺度適用中國國家梂準(CNS ) Α4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)A7 B7 V. Description of the invention (r) The preparation method includes: a process of forming pellets from a raw material resin; a heat treatment process to remove volatile constituents from the pellets;-immersing the pellets in a carbon containing number of 6 The process of immersing the surface of aliphatic hydrocarbons with a boiling point of ~ 8 or a yeast with a boiling point of 1 OOtM to the surface of aliphatic hydrocarbons with a carbon number of 6 to 8 or with a boiling point of 1 ootcm; The forming process of the pellet is formed by the container body and the lid body, and the container containing the half-wafer wafers in a closed state inside M. The ninth invention of the present invention is a method for manufacturing a packaging container for semiconductor wafers; its special features are: This method includes: a resin material is molded to form a container body and a lid body, and the interior is sealed in a closed state The forming process of the container containing the semi-conducting medullary wafers; Μ and a solution containing at least 6-8 carbon aliphatic hydrocarbons or enzymes with a boiling point of 1 OOCK in the body, after being left for a certain period of time • The process of removing the solution from M. The 10th invention of the present invention is a semiconducting «wafer storage method; its motivation is in: This manufacturing method includes: —arrangement of semi-equal thick wafers in the container body; Conform to the cover «• and apply the paper size to the Chinese National Standard (CNS) Α4 specification (210X297 mm) (please read the precautions on the back before filling this page)
L 訂 398659 s脊矢乘¢11-¾¾U 肖Λτ乂^乍土户£ 五、發明说明 ( ) 1 1 I 器 本 體 内 部 之 氣 98 予 以 排 氣 之 排 氣 過 程 以 及 1 1 | —. 在 上 述 容 器 本 體 内 » Μ 氣 體 狀 態 封 入 碳 數 巨 為 6 1 I 請 1 I 8 程 度 之 脂 族 烴 或 沸 點 1 0 0 V >λ 下 之 酵 類 i 將 上 述 容 器 先 閱 1 I 讀 1 本 體 與 蓋 體 之 間 密 閉 之 通 程 者 〇 背 1 之 1 C 作 用 ] 注 I 意 1 根 據 上 述 構 成 藉 由 增 加 容 器 内 之 低 沸 有 機 成 份 的 分 事 項 \ 1 再 1 I 懕 並 將 半 導 體 晶 圓 之 表 面 低 沸 點 之 有 櫬 成 份 被 覆 可 本 1— 謀 求 減 少 對 於 晶 圓 表 面 之 污 染 有 機 物 質 的 量 1 可 長 期 以 清 頁 1 1 淨 狀 態 保 存 半 専 體 晶 圓 0 1 1 此 處 碳 数 巨 設 成 6 —W 8 僳 因 由 半 導 體 晶 圓 附 物 1 1 之 测 定 结 果 得 知 半 導 體 晶 画 表 面 之 殘 留 物 係 較 C = 9 1 訂 為 大 C 8 以 下 之 脂 族 烴 並 未 殘 留 〇 其 结 果 係 示 於 睡 4 1 I 中 〇 此 结 果 係 在 密 閉 容 器 中 將 8 i η c h之 矽 晶 画 Μ 1 0 1 1 0 t: 加 熱 1 小 時 之 後 將 其 表 面 之 附 蕩 物 刮 落 >λ G C 將 1 1 其 測 定 之 结 果 0 由 此 一 结 果 可 知 半 導 腰 晶 圓 表 面 之 殘 留 1 r 物 只 有 C = 9 Μ 上 之 殘 留 物 〇 又 C = 5 >λ 下 之 殘 留 物 > 1 | 會 有 蒸 發 之 問 題 〇 是 Μ > 藉 由 利 用 C = 6 8 之 脂 族 烴 預 1 1 先 注 入 容 器 内 空 間 $ 可 減 少 易 於 殘 留 於 半 導 «§ 晶 圓 表 面 之 1 1 高 沸 點 有 機 成 份 的 蒸 氣 壓 抑 制 與 易 於 殘 留 之 高 沸 點 有 機 1 I 成 份 的 接 觸 1 減 少 導 因 於 有 機 物 之 污 染 及 抑 制 粒 子 〇 1 1 1 又 t 藉 由 將 沸 點 1 0 0 以 下 之 酵 類 同 樣 地 預 先 注 入 1 1 容 器 内 空 間 内 Ρ 可 被 覆 半 専 體 晶 圓 表 面 之 吸 附 酤 f 抑 制 與 1 1 易 於 殘 留 之 高 沸 點 有 機 成 份 的 接 觸 減 少 導 因 於 有 櫬 物 之 1 I - 8 - 1 1 1 本纸伕尺度適用中國國家樣率(CNS ) Α4現格(210X 297公釐) A7 B7 tL order 398659 s ridge vector multiplication ¢ 11-¾¾U 肖 Λτ 乂 ^ Chatodo. Fifth, the description of the invention () 1 1 I The gas inside the device body 98 The exhaust process and 1 1 | in the above container Inside the body »The gas state is enclosed with a huge carbon number of 6 1 I. Aliphatic hydrocarbons with a degree of 1 I 8 or a boiling point of 1 0 0 V > λ for enzymes i Read the above container first 1 I read 1 Body and lid The closed passage between them is the function of 1 C] Note I Note 1 According to the above structure, by increasing the sub-items of low-boiling organic components in the container \ 1 then 1 I 懕 and the surface of the semiconductor wafer has a low boiling point It can be covered by the composition of ingredients 1-to reduce the amount of contaminated organic substances on the surface of the wafer 1 can be cleaned for a long time 1 1 net state The half-wafer wafer 0 1 1 here has a huge carbon number set to 6-W 8. The measurement result of the semiconductor wafer attachment 1 1 indicates that the residue on the surface of the semiconductor crystal painting is larger than C = 9 1 Aliphatic hydrocarbons below C 8 did not remain. The result is shown in Sleep 4 1 I. This result is the drawing of a silicon crystal of 8 i η ch in a closed container Μ 1 0 1 1 0 t: after heating for 1 hour Scrape off the foreign matter on its surface> λ GC will 1 1 its measurement result 0 From this result, it can be seen that the residue 1 r on the surface of the semi-conducting waist wafer is only the residue on C = 9 Μ and C = 5 > Residues under λ > 1 | There will be a problem of evaporation. 〇M > By using aliphatic hydrocarbons with C = 6 8 to pre-inject 1 1 into the space of the container $, it is easy to remain in the semiconducting « § 1 on the wafer surface 1 1 The vapor pressure suppression of high-boiling organic components and the high-boiling point that are likely to remain are 1 I component contact 1 Reduce the pollution caused by organic matter and suppress particles 〇1 1 1 and t By injecting enzymes with a boiling point of less than 100 0 in advance in the same way 1 1 P in the space in the container can be coated with half-grain crystals The absorption of the round surface f inhibits the contact with 1 1 high-boiling organic components that are easy to remain. The reduction is due to the presence of debris. 1 I-8-1 1 1 The paper scale is applicable to the Chinese National Sample Rate (CNS) Α4 (210X 297mm) A7 B7 t
P .之 五、發明说明 ( Ί ) 1 1 I 污 染 及 抑 制 粒 子 〇 此 等 脂 族 烴 之 溫 度 與 蒸 氣 壓 的 關 係 示 於 1 1 1 圖 5 中 0 縱 軸 係 代 表 蒸 氣 壓 (a t D ) 横軸係代表溫度 (t:) X—V 1 I 請 1 1 0 由 此 一 结 果 可 知 藉 由 使 用 C = 6 8 之 脂 族 烴 在 先 閱 1 | 讀 1 般 之 使 用 溫 度 2 〇 t: 之 程 度 大 致 可 將 蒸 氣 壓 形 成 為 1 / 背 1 上 之 1 1 〇 0 >λ 0 主 | I 又 使 用 於 QB 圃 3 不 產 生 粒 子 之 容 器 的 聚 丙 烯 樹 脂 中 所 事 項 1 I 再 1 1 含 之 碳 數 巨 為 6 8 之 脂 族 烴 或 沸 點 1 〇 0 以 下 之 酵 類 填 L 本 的 澳 量 係 5 0 0 P P m 以 上 0 由 此 可 知 封 入 半 導 體 晶 頁 1 1 画 用 包 装 容 器 之 內 部 空 間 内 為 了 產 生 效 力 碳 數 百 為 6 1 1 8 程 度 之 脂 族 烴 或 沸 點 1 0 0 以 下 之 酵 類 宜 在 5 0 1 1 P P m >λ 上 0 1 訂 根 據 本 發 明 之 第 1 發 明 由 於 半 導 體 晶 圓 用 包 装 容 器 1 1 之 内 部 空 間 内 封 入 有 rja m 數 巨 為 6 — 8 程 度 之 脂 族 烴 或 沸 點 1 1 1 0 0 以 下 之 醇 類 因 此 如 上 所 述 與 易 於 殘 留 之 有 1 1 機 成 份 的 接 觸 獲 得 抑 制 可 維 持 濟 淨 之 晶 圓 表 面 〇 1 kT 又 根 據 本 發 明 之 第 2 發 明 由 於 容 器 本 體 係 由 含 有 I 1 碳 數 巨 為 6 8 程 度 之 脂 族 烴 或 沸 點 1 0 0 V 以 下 之 酵 類 1 1 的 樹 脂 所 構 成 因 此 内 部 空 間 内 經 常 封 入 有 碳 數 百 6 1 I 8 程 度 之 脂 族 烴 或 沸 點 1 0 0 V 以 下 之 酵 類 是 Η 如 上 1 I 所 述 與 易 於 殘 留 之 有 機 成 份 的 接 觸 獲 得 抑 制 可 維 持 清 1 1 I 淨 之 晶 圓 表 面 〇 1 1 此 處 為 人 所 期 盼 的 是 使 用 聚 丙 烯 、 聚 乙 烯 聚 碳 酸 1 1 酯 等 作 為 基 材 耐 藥 品 性 及 9- 易 含 浸 性 此 觀 點 而 聚 1 1 1 1 本紙張尺度適用中國國家榇準(CNS ) A4規格(210X297公釐) A7 B7 ι $ k 五、發明説明 ( δ ) 1 1 1 碳 酸 酯 較 前 二 者 稍 劣 〇 1 1 又 根 據 本 發 明 之 第 3 發 明 由 於 半 導 體 晶 圓 用 包 装 1 I 請 1 I 容 器 之 内 部 空 間 内 封 入 有 由 含 浸 碳 数 百 為 6 8 程 度 之 先 閱 1 I 讀 1 脂 族 烴 或 沸 點 1 0 0 Μ 下 之 醇 類 的 樹 脂 所 構 成 可 產 生 背 面 1 I 低 沸 點 有 機 成 份 之 蒸 發 源 藉 此 内 部 空 間 内 經 常 封 入 有 之 注 1 1 意 1 碳 數 巨 6 8 程 度 之 脂 族 烴 或 沸 點 1 0 0 V Μ 下 之 酵 類 » 事 項 1 I 再 1 I 而 如 上 所 述 可 抑 制 與 易 於 殘 留 之 有 懺 成 份 的 接 觸 维 持 寫 本 1一 濟 淨 之 晶 圓 表 面 0 I >«—«· 1 I 此 外 根 據 本 發 明 之 第 5 發 明 藉 由 氣 相 法 引 發 交 1 1 聯 反 應 形 成 聚 丙 烯 樹 脂 再 將 此 聚 丙 烯 樹 脂 浸 潰 於 正 己 焼 1 1 中 洗 淨 將 其 作 為 原 料 樹 脂 形 成 包 装 容 器 箱 此 其 内 部 1 訂 1 [ 空 間 内 經 常 封 入 有 正 己 烷 如 此 如 上 所 述 與 易 於 殘 留 之 有 機 成 份 的 接 觸 易 獲 得 抑 制 維 持 澝 淨 之 晶 圓 表 面 0 1 1 根 據 本 發 明 之 第 6 發 明 在 由 原 料 樹 脂 以 埶 處 理 除 去 1 1 揮 發 有 櫬 成 份 之 後 由 於 係 在 該 原 料 樹 脂 中 添 加 碳 數 百 為 1 1 0 1 6 程 度 之 脂 族 烴 形 成 為 九 粒 利 用 該 丸 粒 形 成 半 1 導 體 晶 圓 包 裝 容 器 因 此 藉 由 熱 過 程 該 脂 族 烴 會 分 解 1 1 » 而 成 形 後 該 容 器 會 成 為 含 有 碳 數 巨 為 6 8 程 度 之 脂 1 1 族 烴 者 因 此 其 内 部 空 間 内 經 常 封 入 有 碳 數 巨 6 ^>w 8 程 1 I 度 之 脂 族 烴 而 如 上 所 述 與 易 於 殘 留 之 有 健 成 份 的 接 Λ〇9 觸 1 1 1 獲 得 抑 制 可 維 持 淸 淨 之 晶 圓 表 面 0 1 1 根 據 本 發 明 之 第 7 發 明 在 將 半 導 體 晶 画 包 装 容 器 成 1 | 形 之 後 至 少 將 容 器 本 體 浸 漬 於 含 碳 數 百 為 6 8 程 度 之 1 I - 10 • 1 1 1 本紙张尺度適用中國國家標準(CNS ) A4規格(2丨0X29*7公釐) A7 B7 £ t 五、發明説明( 脂族烴或沸點1 〇 〇t:M上之酵頚的溶液中’在其表面含 浸碳數目為6〜8程度之脂族烴或沸點1 0 Ot下之酵類 ,因此•内部空間内經常封入有碳數目6〜8程度之脂族 烴或沸點1 0〇t:K下之酵類,如上所述·與易於殘留之 有镅成份的接觸獲得抑制*可維捋清淨之晶圆表面。此處 *由於直接與晶圓接觸之載架或壓持件係汚染物由接觴點 擴散之原因,因此,理想的是使其不含浸碳數目為6〜8 程度之脂族烴或沸點1 〇〇=以下之酵類,而只含浸容器 本體及蓋體。 根據本發明之第8發明,係將九粒浸瀆於含碳數目為 6〜8程度之脂族烴或沸點1 0 OtM下之酵類的溶液中 ,在其表面含浸碳數目為6〜8程度之脂族烴或沸點1 0 OC下之酵類•因此,成形後之容器的内部空間内•經常 封入有碳數目6〜8之脂族烴或沸點1ΟΟΌΜ下之酵類 ,而如上所述,與易於殘留之有櫬成份的接觸獲得抑制, 可維持清淨之晶圓表面。 根據本發明之第9發明*在將半導體晶圓包装容器成 形之後•至少在上述容器本體内置入含碳數目為6〜8程 度之脂族烴或沸點1 OOt:M下之酵類的溶液中,並在放 置一定時間後予Μ除去,藉此,可在内壁含浸碳數目為6 〜8程度之脂族烴或沸點1 〇 〇·Ό以下之酵類•使得容器 之内部空間内經常封入有碳數目6〜8程度之脂族烴或沸 點1 00=以下之酵類,而如上所述,與易於殘留之有機 11 未紙法尺度適用中國國家標準(CNS ) Α4規格(210Χ 297公釐) (請先閱讀背面之注意事項再填寫本瓦) 訂 Α7 Β7 五、發明説明( 體並酵 Μ 數櫬 本,之是碳有 器除下,有之 容排Μ閉入留 。 在體 Ρ 密封殘 。 面係氣 ο 間常於面 表於部 ο 體經易表 圓由内 1 蓋内與圓 晶,將點與間,晶 之明,沸體空述之 淨發後或本部所淨 濟 ο 體烴器 内上清 持 1 蓋族容之如持 維第置脂述器而維 可之載之上容,可 , 明 在度將,烴, 制發 * 程,止族制 抑本面 8 入為脂抑 得據晶 ~ 封啟之得 獲根體 6 態開度獲 觸,導為狀體程觸 接外半目體蓋 8 接 的另列数氣將 ~ 的 份 配碳 以至 6 份 成 内將類,目成 (請先Μ讀背面之注意事項再填寫本页) 〔實施例〕 其次,茲就本發明之實腌例,佐Μ圜面進行詳细說明 半導髖晶圔用包裝容器,如圖1所示•係由:一 所製造之聚丙烯所形成之容器本體1 ; 一形成為 本體1密閉之蓋體2;—用Μ載持半専體晶圓6 上述容器本體1内之由經脫氣處理的聚丙烯所構 3;Μ及一配合載架3設置成之將半導體晶圓6 之壓特件4所構成。此處,容器本體1與蓋艚2 橡膠墊5密接。 此一包装容器;容器内部係充滿有櫬氣體,即使 也不會受到影響,可維持淸淨之表面吠態不會斥 t 此一 由液相法 可將該容 ,收納於 成之載架 壓持固定 •係介K 根據 雜質進入 水0 其次 明° ,茲就此半導體晶圓用包装容器之製法,進行說 -12- 本紙浪尺度適用中國國家標準(CNS ) Α4規格(2丨0Χ 297公釐) A7 B7 ΛP. Fifth, description of the invention (Ί) 1 1 I Pollution and particle suppression. The relationship between the temperature of these aliphatic hydrocarbons and the vapor pressure is shown in 1 1 1 in Figure 5. 0 The vertical axis represents the vapor pressure (at D) The axis represents the temperature (t :) X—V 1 I Please 1 1 0 From this result, we can know that by using aliphatic hydrocarbons with C = 6 8, the first reading 1 | the reading 1 general use temperature 2 〇t: degree The vapor pressure can be roughly formed into 1/1 on the back 1 1 〇0 > λ 0 Main | I also used in QB Garden 3 polypropylene resin containers that do not generate particles 1 I Re 1 1 Carbon contained The number of aliphatic hydrocarbons with a huge number of 6 8 or enzymes with a boiling point of less than 1 〇0. The Australian quantity is 5 0 0 PP m or more. 0 It can be seen that it is enclosed in a semiconductor crystal sheet 1 1 painting packaging container In order to produce aliphatic hydrocarbons with a potency of hundreds of carbon in the range of 6 1 1 8 or enzymes with a boiling point of less than 100 0 in the space, it is better to set 5 0 1 1 PP m > λ on 0 1 according to the first invention of the present invention. The inner space of the packaging container 1 for semiconductor wafers is filled with aliphatic hydrocarbons with a rja m number of about 6-8 or alcohols with boiling points of 1 1 1 0 0 or less. The contact of the components is suppressed, and the wafer surface can be maintained to be clean. 〇1 kT According to the second invention of the present invention, the system of the container is composed of aliphatic hydrocarbons with an I 1 carbon number of about 6 8 or a boiling point of 100 V or less. The yeast 1 1 is composed of resin, so the interior space is often sealed with hundreds of carbons, aliphatic hydrocarbons with a boiling point of 6 1 I 8 or a boiling point below 1 0 0 V. The yeasts with a boiling point of less than 100 V are Η. The contact of the organic components can be suppressed to maintain a clean 1 1 I clean wafer surface. 〇 1 1 It is expected that the use of polypropylene, polyethylene polycarbonate 1 1 etc. as the substrate chemical resistance and 9 -Easy to impregnate from this point of view and gather 1 1 1 1 This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 ι $ k 5. Description of the invention (δ) 1 1 1 Carbonate is higher than the first two It is slightly inferior. 1 1 According to the third invention of the present invention, since the packaging for semiconductor wafers 1 I, please 1 I, the internal space of the container is filled with hundreds of carbon impregnated to the extent of 6 8 first reading 1 I reading 1 aliphatic hydrocarbon Or an alcohol resin with a boiling point of 1 0 0 Μ can produce a backside 1 I. Evaporation source of low-boiling organic components by which the internal space is often enclosed with notes 1 1 It means 1 aliphatic hydrocarbon with a carbon number of 6 8 or a yeast with a boiling point of 1 0 0 V Μ »Item 1 I 1 1 and as mentioned above, it is possible to suppress the contact with the susceptible residual components and maintain the book. The clean wafer surface 0 I > «—« · 1 I In addition, according to the fifth invention of the present invention, a cross-linking reaction is initiated by the gas phase method 1 1 The coupling reaction forms a polypropylene resin and the polypropylene resin is impregnated into nengjiu 1 1 Wash and use it as a raw material resin to form a packaging container box. The inside of the container 1 is set 1 [N-hexane is often enclosed in the space. As mentioned above, contact with organic components that are likely to remain is easy to obtain. The surface of the wafer is maintained and maintained. 0 1 1 According to the sixth invention of the present invention, after the raw material resin is removed by the treatment 1 1 After the volatilized component is volatilized, the amount of carbon added to the raw material resin is 1 1 0 1 6 aliphatic hydrocarbons are formed into nine pellets. The pellets are used to form a semi-conductor wafer packaging container. Therefore, the aliphatic hydrocarbons will be decomposed by thermal process. 1 1 »After forming, the container will become carbon-containing Those with a huge amount of lipid 1 1 group hydrocarbons with a degree of 6 8 are therefore often enclosed in the internal space with an aliphatic hydrocarbon with a huge carbon number of 6 ^ > w 8 Cheng 1 I degree and are connected to healthy components that are likely to remain as described above Λ〇9 Touch 1 1 1 Obtaining a wafer surface that can be suppressed to maintain cleanness 0 1 1 According to the seventh invention of the present invention, after the semiconductor crystal picture packaging container is shaped into 1 | shape, at least the container body is immersed in carbon containing hundreds of 6 8 Degree 1 I-10 • 1 1 1 This paper scale is applicable to the Chinese National Standard (CNS) A4 specifications (2 丨 0X29 * 7mm) A7 B7 £ t V. Description of the invention (aliphatic hydrocarbon or boiling point 1 〇〇 t: In the solution of fermented codfish on M, the number of carbon impregnated on its surface is 6 Aliphatic hydrocarbons with a degree of 8 or yeasts with a boiling point of 10 Ot, therefore, aliphatic hydrocarbons with a carbon number of 6 to 8 or boiling points with a boiling point of 100 ot: yeasts with a boiling point of 100 Kt are often enclosed in the internal space, as described above · Resistance to contact with americium components that are likely to remain can be suppressed. * The wafer surface can be cleaned and cleaned. Here * Because the carrier or holding member that directly contacts the wafer is the reason that the contaminants diffuse from the contact point, it is desirable to make it free of aliphatic hydrocarbons or boiling points 1 with a carbon immersion number of 6 to 8 〇〇 = The following enzymes, and only impregnate the container body and lid. According to the eighth invention of the present invention, nine grains are immersed in a solution of aliphatic hydrocarbons having a carbon number of 6 to 8 or enzyme solutions at a boiling point of 10 OtM, and the surface is impregnated with a carbon number of 6 to 8 Degree of aliphatic hydrocarbons or enzymes at a boiling point of 10 OC • Therefore, in the internal space of the container after molding • aliphatic hydrocarbons with a carbon number of 6 to 8 or enzymes at a boiling point of 100 ΌΜ are often enclosed, as described above The contact with the volatile components that are easy to remain is suppressed, and the clean wafer surface can be maintained. According to the ninth invention of the present invention * After forming the semiconductor wafer packaging container • At least the container body is built into an aliphatic hydrocarbon containing a carbon number of about 6 to 8 or a fermentation solution at a boiling point of 1 OOt: M , And remove it after leaving it for a certain period of time, so that the inner wall can be impregnated with aliphatic hydrocarbons with a carbon number of about 6 to 8 or enzymes with a boiling point of less than 100,000 · Ό. Aliphatic hydrocarbons with a carbon number of 6 to 8 or enzymes with a boiling point of 100 = the following, and as mentioned above, with the organic residues that are easy to remain, the Chinese standard (CNS) Α4 specification (210X 297 mm) (Please read the precautions on the back before filling in this tile) Order Α7 Β7 V. Description of the invention (Incorporated and fermented M is the number of copies, the carbon is removed, and some are allowed to be discharged and closed. The body is sealed. The surface of the air is usually between the surface and the surface. The body is easy to form a circle from the inside 1 to cover the inside and the round crystal, the point and the space, the crystal is clear, the net of the boiling body is empty, or the net is cleaned by the headquarters. ο The supernatant holding 1 in the body hydrocarbon container The content is as high as possible, it can be bright, the hydrocarbons, the hair production process, the suppression of the family's self-restraint can be controlled according to the crystals ~ Feng Qizhi's roots can be touched by the 6-state opening and lead Touch the outer half of the lid to cover the other side of the body. The number of other parts is to be carbonized to 6 parts into the general class (please read the precautions on the back and then fill in this page) [Example 〕 Secondly, here is a detailed description of the actual pickling example of the present invention, Zuo Mian noodles packaging container for semi-conducting hip crystal, as shown in Figure 1 • is: a container body 1 formed by a polypropylene produced A closed lid 2 formed as a body 1;-supporting a half-wafer wafer 6 with Μ 6 in the container body 1 made of degassed polypropylene 3; Μ and a matching carrier 3 are set to The semiconductor wafer 6 is composed of the special parts 4. Here, the container body 1 and the cover 2 are in close contact with the rubber pad 5. This packaging container; the inside of the container is filled with gas, even if it will not be affected, can Maintaining the clean surface bark state will not repel t. This liquid phase method can be used to hold the container and hold it in the carrier to fix it. Ming 0 Next water entering °, hereby using this semiconductor wafer manufacturing method of the packaging container, this paper will be explained -12- waves applied China National Standard Scale (CNS) Α4 Specification (2 Shu 0Χ 297 mm) A7 B7 Λ
I •β i ? i 五、發明説明 ( ι! ) 1 1 首 先 像 在 正 己 焼 中 充 填 單 體 >λ 液 相 法 引 發 交 職 反 1 1 1 應 形 成 聚 丙 烯 0 此 時 由 於 係 VX 正 己 烧 洗 淨 雜 質 或 觸 媒 1 I 殘 渣 故 在 聚 丙 烯 樹 脂 中 含 有 多 量 之 正 己 综 ( C = 6 ) 0 請 先 1 閏 | 而 後 於 此 聚 丙 烯 樹 脂 中 添 加 抗 氧 化 劑 等 再 予 形 成 讀 背 I 面 I 為 丸 粒 並 使 用 模 具 進 行 容 器 本 體 1 \ 蓋 體 2 等 各 零 件 之 之 1 I t. 1 1 成 形 〇 然 後 再 對 該 丸 粒 實 施 1 0 0 3 0 4 0 小 時 事 項 1 I 之 熱 處 理 將 揮 發 有 機 成 份 充 份 除 去 後 再 Μ 棋 具 進 行 載 填 寫 架 3 、 壓 持 件 4 之 各 零 件 的 成 形 0 页 1 在 依 此 所 形 成 之 半 導 體 晶 圓 包 裝 容 器 的 載 架 3 上 收 1 1 纳 2 5 片 8 in c h之 矽 晶 圓 予 密 封 在 常 溫 下 經 過 3 個 1 | 月 之 後 將 容 器 開 啟 時 不 管 是 任 何 一 片 矽 晶 圓 均 可 維 1 訂 持 清 淨 之 表 面 〇 其 次 為 了 测 定 此 等 脂 肪 族 烴 之 添 加 量 與 晶 片 表 面 之 1 1 污 染 度 的 闞 係 係 在 清 淨 之 玻 璃 製 密 閉 容 器 中 Μ 未 接 觸 之 1 1 方 式 置 入 未 經 除 去 污 染 物 質 之 聚 丙 烯 樹 脂 丸 粒 及 洗 淨 之 矽 1 晶 圓 變 化 保 管 時 之 正 辛 焼 ( C = 8 ) 的 添 加 量 測 定 污 1 染 度 0 结 果 係 示 於 圖 2 中 0 此 處 係 將 晶 園 表 面 削 取 之 * 1 1 在 5 9 0 之 氮 中 令 其 加 熱 脫 離 將 脫 離 之 成 份 Μ G C 一 1 1 Μ S ( 氣 體 層 析 術 ) 分 析 之 〇 又 使 用 正 癸 烧 作 成 檢 量 線 1 I » 予 Μ 換 算 成 重 量 0 將 此 — 測 定 ft >λ 表 面 除 之 作 為 每 單 位 1 1 I 面 積 之 吸 附 里 0 縱 軸 係 晶 圓 表 面 之 污 染 有 櫬 物 質 的 量 ( η 1 1 S / C m 2 ) 横 軸 係 添 加 置 / 飽 和 量 ( 4 0 V ) 〇 由 此 1 | 一 结 果 可 知 若 愈 將 添 加 量 / 飽 和 量 增 大 愈 是 確 實 地 能 1 I - 1 3 - 1 1 1 表紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐)I • β i? I Fifth, the description of the invention (ι!) 1 1 First of all, it is like filling the monomer in n-hex yaki> λ liquid phase method triggers the transfer reaction 1 1 1 polypropylene should be formed 0 at this time due to the system VX is burned Washing impurities or catalysts 1 I residues, it contains a large amount of positive and negative synthesis in the polypropylene resin (C = 6) 0 Please first 1 leap | Then add antioxidants to the polypropylene resin and then form the reading back I surface I For the pellets, use a mold to form 1 I t. 1 1 of the container body 1 \ lid 2 and other parts. Then perform 1 0 0 3 0 4 0 hours on the pellets. 1 I heat treatment will volatile organic After the components have been fully removed, the chess pieces are loaded to form the parts of the filling frame 3 and the holding member 4 0 Page 1 The semiconductor wafer packaging volume formed accordingly The carrier 3 of the device received 1 1 nano 2 5 silicon wafers of 8 in ch pre-sealed at room temperature after 3 1 | months after the container is opened, no matter which silicon wafer can be maintained 1 order clean The surface 〇Secondly, in order to determine the amount of these aliphatic hydrocarbons added and the degree of contamination on the surface of the wafer, the Kan is placed in a clean glass closed container. The non-contacted 1 1 is placed in the polymer that has not been decontaminated. Acrylic resin pellets and cleaned silicon 1 Was changed during storage and storage of the amount of positive Xin (C = 8) measurement of contamination 1 Stain degree 0 The results are shown in Figure 2 0 here is to cut the surface of the crystal garden Of * 1 1 in 5 9 0 nitrogen to make it heat away from the component that will be separated Μ GC 一 1 1 Μ S (gas chromatography) analysis and use decane burn to make the calibration line 1 I »to Μ conversion Into weight 0 This — determine the ft > λ surface divided as the adsorption per unit 1 1 I area. 0 The vertical axis is the amount of contaminated material on the wafer surface (η 1 1 S / C m 2) The horizontal axis is added / Saturation amount (4 0 V) ○ From this 1 | A result shows that the more the added amount / saturation amount is, the more sure it will be. 1 I-1 3-1 1 1 The table paper size is applicable to the Chinese National Standard (CNS) A4 Specification (210X 297mm)
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A B 五、 發明説明(Θ) 使高沸點成份之污染減輕。 又,為了測定密閉時之内部空間的狀態,準備4個容 器A〜D,在其中封入相同之矽晶圓。此等容器具有次表 所示之構成。 表1 ·供圖3所示測試用之容器的材料構成 容器本體 載 架 壓持件 蓋體 A 液相法、低沸點 成份多之PP (200ppm) 液相法、低沸點 成份多之PP 熱塑性 彈性體 聚碳酸酯 B 液相法、低沸點 液相法、低沸點 經熱處理之 聚碳酸酯 成份多之PP 成份多之PP PP (60ppm) C 液相法、低沸點 液相法、低沸點 經熱處理之 聚碳酸酯 成份多之PP 成份多之PP PP (8ppm) D 氣相法、PP 氣相法、PP 氣相法、PP 聚碳酸酯 -14- (請先Μ讀背面之注意事項再填寫本页) 本紙伕尺度適用中國國家標準(CNS〉A4規格(210X297公釐) A 7 B7 五、發明説明(〇) (4ppm) - PP:聚丙稀 而後,在針茼之前端安装吸附管’在上述容器本體中 分別開設孔,將吸附管插入該穴中•將1升之内部蒸氣吸 引之。將該吸附管設定於GC — MS中,分析脫維氣體, 测定該時之容器内低沸點揮發成份量。其结果係示於圔3 中。此處,縱細為l〇_1 ws/1 。此時,AB並無產 生粒子•可良好地維持晶圓,但是CD却產生粒子。由此 一事實可知,容器内低沸點揮發成份董愈多*污染愈少, 又,容器本體也是低沸點成份多者較好,而直接與晶圃接 觸之載架或懕持件,K低沸點成少者為佳。 其次•作為本發明之第二實施例,就半導體晶圓用包 装容器之製法的其他例,進行說明。 首先•茲Μ氣相法引發交聯反應,形成聚丙烯。而後 ,只將容器本體及蓋體用之聚丙烯以正己烷洗淨。此時, 聚丙烯樹脂中含有多量之正己烷(C=6)。而後之過程 ,係與上述第一實胨例完全同樣地形成。 依此一方式,Μ氣相法形成之聚丙烯的壜合也是,在 交瞄後•以正己烷將其洗淨,然後Κ與由使用液相法形成 之聚丙烯的半導體晶圓包装容器相同之方式,在常溫下經 -15- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公4 ) (請先閲讀背面之注意事項再填寫本頁) 訂 A7 _B7 五、發明説明(卟) 過3個月之後,將容器開啟時,任何一個晶片均不會產生 斥水之現象,可維持清淨之表面。 其次,作為本發明之第三實施例,就半専體晶圓用包 装容器之製法的其他例,進行說明。 苜先,對於聚丙烯樹脂實施1 00C、30〜40小 時之熱處理,將揮發有機成汾充份除去後·於該聚丙烯中 添加碳數目為1 0〜1 6程度之脂族烴0 . 0 1%之程度 ,而後,混合约為1 0〜1 6程度之脂族烴,再製埴丸粒 1而後,使用模具進行容器本體1及蓋趙2之各零件的成 形。 另一方面•將載架及歷持件,除了脂族烴之添加過程 K外·依與上述相同之方式形成。 依此一方式形成之半導體晶圓包裝容器也是,同樣在 常溫下經過3個月之後,於將容器開啟時不管是任何一個 矽晶園*均可維持濟淨的表面。 其次,作為本發明之第四W施例*茲就本發明半導艚 晶圓用包裝容器之製法的又一其他例,進行說明。 首先,將聚丙烯作為原料*實施1 001、30〜4 〇小時之熱處理,充份除去揮發性有機成份後,使用棋具 進行容器本趙1 、蓋H2、載架3、壓持件4之各零件的 成形。 而後,就容器本體及蓋®,予以浸漬於異丙酵溶液中 數曰含浸之。A B 5. Invention description (Θ) Reduce the pollution of high boiling point components. In addition, in order to measure the state of the internal space at the time of sealing, four containers A to D are prepared, and the same silicon wafer is enclosed therein. These containers have the structure shown in the table below. Table 1 The material of the container used for the test shown in Figure 3 constitutes the container body holder holder A. Liquid phase method, PP with high boiling point components (200ppm) Liquid phase method, PP with high boiling point components Thermoplastic elasticity Polycarbonate B Liquid phase method, low boiling point liquid phase method, low boiling point heat-treated polycarbonate with many PP components PP PP (60ppm) C liquid phase method, low boiling point liquid method, low boiling point heat-treated PP with many polycarbonate components PP with many components PP (8ppm) D gas phase method, PP gas phase method, PP gas phase method, PP polycarbonate-14- (please read the precautions on the back before filling in this Page) This paper is applicable to the Chinese national standard (CNS> A4 specification (210X297mm) A 7 B7. V. Invention description (〇) (4ppm)-PP: Polypropylene, then install the adsorbent tube at the front end of the needle chuck. Open holes in the container body, insert the adsorption tube into the cavity • Aspirate 1 liter of internal vapor. Set the adsorption tube in the GC-MS, analyze the dedimensional gas, and measure the low-boiling volatile components in the container at that time Quantity. The result is shown in 圔 3. Here, the length is 10_1 ws / 1. At this time, AB does not generate particles. The wafer can be maintained well, but CD generates particles. From this fact, it can be seen that The more low-boiling point volatile components in the container * the less pollution, and the container body is also the one with more low-boiling point components, and the carrier or holder directly in contact with the crystal garden, the one with the lower K-boiling point is better. Secondly, as a second embodiment of the present invention, another example of the manufacturing method of a packaging container for semiconductor wafers will be described. First, the cross-linking reaction is initiated by the gas phase method to form polypropylene. Then, only the container body and The polypropylene used for the cover body is washed with n-hexane. At this time, the polypropylene resin contains a large amount of n-hexane (C = 6). The subsequent process is formed in exactly the same way as the first example above. In the same way, the polypropylene formed by the M vapor phase method is also combined. After cross-checking, wash it with n-hexane, and then K is the same way as the semiconductor wafer packaging container of polypropylene formed by the liquid phase method. At room temperature, -15- This paper standard applies to China Standard (CNS) Α4 specification (210Χ297 公 4) (Please read the precautions on the back before filling in this page) Order A7 _B7 5. Description of the Invention (Porphy) After 3 months, when opening the container, no chip is available The phenomenon of water repellency is generated, and the clean surface can be maintained. Secondly, as a third embodiment of the present invention, another example of the manufacturing method of a packaging container for half wafer wafers will be described. 1 00C, 30 ~ 40 hours of heat treatment, after the volatile organic compounds have been fully removed, add to the polypropylene an aliphatic hydrocarbon with a carbon number of about 10 ~ 16 to a level of 0.01%, and then mix Aliphatic hydrocarbons with a degree of about 10 to 16 are prepared, and then the pellets 1 are prepared, and then the parts of the container body 1 and the cover 2 are molded using a mold. On the other hand, the carrier and the holder are formed in the same manner as above except for the addition process K of the aliphatic hydrocarbon. The semiconductor wafer packaging container formed in this way is also the same. After 3 months at normal temperature, no matter which silicon crystal * is used to maintain a clean surface when the container is opened. Next, as a fourth W embodiment of the present invention, yet another example of the manufacturing method of the semiconductor wafer packaging container of the present invention will be described. First, use polypropylene as a raw material * to perform a heat treatment of 1 001 and 30 to 400 hours to fully remove volatile organic components, and then use a chess set to perform each of the container basic Zhao 1, the lid H2, the carrier 3, and the holding member 4 The forming of parts. Then, the container body and lid® were immersed in isopropyl fermentation solution for several days.
本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 五、發明説明 ((.〇 1 1 I 依 此 一 方 式 形 成 之 半 導 體 晶 圓 包 装 容 器 也 是 在 常 溫 1 1 1 下 經 過 3 個 月 之 後 在 將 容 器 開 啟 時 不 管 是 任 何 個 矽 1 I 請 1 I 晶 圓 均 可 維 持 清 淨 之 表 面 0 先 閔 1 I 而 後 作 為 本 發 明 之 第 五 貢 施 例 玆 就 本 發 明 半 導 體 讀 背 t6 1 1 I 晶 画 用 包 装 容 器 之 製 法 的 另 一 其 他 例 進 行 說 明 0 之 注 1 I 意 I 首 先 將 聚 丙 烯 作 為 原 科 形 成 九 粒 後 實 施 1 0 0 項 1 I 再 1 | 、 3 0 4 0 小 時 之 熱 處 理 充 份 除 去 揮 發 性 有 懺 成 份 後 1 一 裝 使 用 本 9 模 具 進 行 容 器 本 體 1 Ν 蓋 體 2 Λ 載 架 3 、 壓 持 件 4 1 ·«—> 1 之 各 零 件 的 成 形 〇 1 1 而 後 在 容 器 本 體 及 蓋 體 中 以 數 曰 之 放 置 含 浸 入 其 1 1 重 量 5 0 P P m 以 上 之 碳 數 巨 6 8 程 度 的 脂 族 烴 或 沸 點 1 訂 同 等 之 酵 類 將 不 要 之 部 份 >λ 洗 淨 除 去 以 低 沸 點 成 份 充 1 滿 容 器 内 0 1 1 依 此 — 方 式 形 成 之 半 導 體 晶 圆 包 裝 容 器 也 是 在 常 溫 1 | 下 經 過 3 個 月 之 後 在 將 容 器 開 啟 時 不 管 是 任 何 * 個 矽 1 Λ>- 晶 圓 均 可 維 持 清 淨 之 表 面 Ο W 1 又 此 一 第 五 實 施 例 中 也 可 在 成 形 後 之 容 器 本 體 及 1 1 蓋 體 中 含 浸 入 碳 數 百 為 6 — 8 程 度 之 脂 族 烴 也 可 將 其 1 I 含 浸 人 丸 粒 中 〇 1 1 繼 之 作 為 本 發 明 之 第 實 施 例 茲 就 本 發 明 半 導 體 1 1 晶 圓 用 包 裝 容 器 之 製 法 的 又 一 其 他 例 進 行 說 明 0 1 1 首 先 將 聚 丙 烯 作 為 原 料 形 成 丸 粒 後 施 VX 1 0 0 v 1 I 、 3 0 4 0 小 時 之 麩 處 理 在 將 揮 發 性 有 機 成 份 充 份 除 1 1 1 - 17 - 1 1 1 本紙ft尺度適用中國國家標準(CNS ) A4说格(210X297公釐) 五、發明説明(it ) 去後,再 持件4之 在依 時,將碳 的有櫬物 置入。 又, 之脂族烴 程度之脂 A7 B7 使用模具進行容器本體1 各零件的成形。 此所形成之包裝容器中收 數目為6〜8程度之脂族 質,只Μ將容器之内容積 、蓋體2、載架3、懕 納半導體晶圆予以密封 烴或沸點同等之酵類等 Μ飽和蒸氣懕充滿的盪 將碳數目為6〜8程度 含浸有碳數目為6〜8 入容器内。 例進行說明。 其載架與容器本體像一 2由含浸有碳數目為6 。而直接與晶圓接觸之 充份除去揮發性有機成 件。 (請先閱讀背面之注意事項再填寫本页) I % ί Ρ 此一 體形成, 〜8程度 容器本體 份之聚丙 〔發明之 根據 〔圖面之 圔1 解透視圓 画2 之低沸點 圖3 於上述第 以氣體狀 族烴的基 其次·茲就本 包装容器 此一場合 六實腌例中,係 態封入,也可將 材(圖未示)封 發明之其他實施 ,如圔6所示, 下*只有蓋體1 的聚丙烯所構成 持件1 4 *係由 。1 5係密封部 之脂族烴 1 1或應 烯所構成 效果〕 本發明,可長期維持清淨之半導體晶圓表面。 簡單說明] 係本發明第一實施例半導體晶圚用包装容器之分 係對於晶園表面之污染有 有櫬成份的添加*之Μ係 係容器内低沸點揮發成份 -1 8 _ 櫬物質的量與對於容器 量與粒子發生之鼷係圔 本紙伕尺度適用中國國家標準(CNS ) Α4現格(210Χ 297公釐) it % 五、發明説明(q) 圖 4 係 晶 圓 表 面 附 羞 圖 5 係 各 脂 族 烴 之 溫 圖 6 係 本 發 明 第 實 解 透 視 [SI MM 0 C 付 之 說 明 ] 1 容 器 本 體 2 蓋 體 3 載 架 4 歷 持 件 5 密 封 部 件 1 1 容 器 本 體 1 2 蓋 體 1 4 歷 持 件 1 5 密 封 部 件 A7 B7 物的分析结果之分析圖。 度與蒸氣壓之關係圖。 施例半導體晶圓用包装容器之分 (請先閱讀背面之注意事項再填寫本f ) 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐)This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) A7 B7 V. Description of the invention ((.〇1 1 I The semiconductor wafer packaging container formed in this way is also passed at room temperature 1 1 1 3 months later, when the container is opened, no matter any silicon 1 I, please 1 I wafer can maintain a clean surface. 0 Min 1 I, and then as the fifth tribute of the present invention. 1 1 I I will explain another example of the manufacturing method of the packaging container for crystal painting. Note 1 I meaning I first use polypropylene as the original family to form nine grains and then implement 1 0 0 Item 1 I again 1 |, 3 0 4 0 After heat treatment for 1 hour to fully remove volatile and volatile components, 1 use this 9 mold to carry out the container body 1 Ν lid 2 Λ carrier 3, holding 4 1 · Forming of various parts of «—> 1 〇1 1 and then placed in the container body and lid body for several days to impregnate aliphatic hydrocarbons with a carbon number of about 6 8 with a weight of 1 1 and a weight of 5 0 PP m or more Or boiling point 1, order the same part of the yeast that will not be needed> λ Wash and remove the low-boiling ingredients to fill 1 full container 0 1 1 According to this-the semiconductor wafer packaging container formed in this way is also at room temperature 1 | after 3 After a month, when opening the container, no matter how many silicon 1 Λ >-wafers can maintain a clean surface Ο W 1 and this fifth embodiment can also be formed in the container body and 1 1 cover Aliphatic hydrocarbons impregnated with hundreds of carbon in the degree of 6-8 can also be used as the first embodiment of the present invention. Invention of the semiconductor 1 1 Another example of the manufacturing method of a packaging container for wafers 0 1 1 First, polypropylene is used as a raw material to form pellets, and VX 1 0 0 v 1 I and 3 0 4 0 hours of bran treatment are used. The volatile organic components are adequately removed 1 1 1-17-1 1 1 The ft scale of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) 5. After the description of the invention (it) goes, hold the 4 In time, put the carbon shavings. In addition, the aliphatic hydrocarbon level of fat A7 B7 molds the various parts of the container body 1 using a mold. The resulting packaging container contains 6 to 8 aliphatic substances, and only the inner volume of the container, the lid 2, the carrier 3, and the semiconductor wafer are sealed with hydrocarbons or yeasts with the same boiling point, etc. The saturated steam filled with saturated steam will impregnate the carbon with a number of 6 ~ 8 into the container with a carbon number of 6 ~ 8. Examples. The carrier and the container body are like one 2 and the number of impregnated carbon is 6. Direct contact with the wafer is sufficient to remove volatile organic components. (Please read the precautions on the back before filling in this page) I% ί Ρ This is integrally formed, ~ 8 degree polypropylene of the body of the container [Based on the invention [圔 1 of the drawing] Solution perspective round drawing 2 Low boiling point of Figure 3 in The above-mentioned base of gaseous group hydrocarbons. Secondly, in the case of this packaging container, in the case of the six-paste pickling system, the material (not shown) can also be sealed in other implementations of the invention, as shown in 圔 6, Bottom * Only the holder 1 4 made of polypropylene of the cover 1 * is made of. 1 5 Series of aliphatic hydrocarbons in the sealing part 1 1 or the composition of the effect [Effect] The present invention can maintain a clean semiconductor wafer surface for a long time. Brief description] This is the first embodiment of the present invention. The packaging container for semiconductor crystals has the addition of volatile components to the pollution of the surface of the crystal garden. * The M-based container has a low boiling point volatile component -1 8 _ the amount of volatile materials For the paper size of the container volume and particle generation, the Chinese national standard (CNS) Α4 is present (210Χ 297 mm) it% V. Invention description (q) Figure 4 shows the surface of the wafer. Figure 5 shows The temperature of each aliphatic hydrocarbon is shown in Fig. 6 according to the present invention [SI MM 0 C description] 1 Container body 2 Cover 3 Carrier 4 Holder 5 Sealing member 1 1 Container body 1 2 Cover 1 4 Holder 1 5 An analysis diagram of the analysis results of the sealing parts A7 B7. Diagram of the relationship between temperature and vapor pressure. Examples of packaging containers for semiconductor wafers (please read the precautions on the back before filling in this f) The specifications of this paper apply to the Chinese National Standard (CNS) A4 specification (210X 297mm)
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP32695094A JPH08186162A (en) | 1994-12-28 | 1994-12-28 | Packing vessel for semiconductor wafer, manufacture thereof and storing method of semiconductor wafer using the same |
Publications (1)
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TW298659B true TW298659B (en) | 1997-02-21 |
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TW84111576A TW298659B (en) | 1994-12-28 | 1995-11-02 |
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TW (1) | TW298659B (en) |
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JP6600480B2 (en) * | 2015-04-20 | 2019-10-30 | 東京エレクトロン株式会社 | Method for processing an object |
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1994
- 1994-12-28 JP JP32695094A patent/JPH08186162A/en active Pending
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1995
- 1995-11-02 TW TW84111576A patent/TW298659B/zh active
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JPH08186162A (en) | 1996-07-16 |
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