TW295683B - - Google Patents

Download PDF

Info

Publication number
TW295683B
TW295683B TW084103207A TW84103207A TW295683B TW 295683 B TW295683 B TW 295683B TW 084103207 A TW084103207 A TW 084103207A TW 84103207 A TW84103207 A TW 84103207A TW 295683 B TW295683 B TW 295683B
Authority
TW
Taiwan
Prior art keywords
coupled
layer
item
metal layer
diode
Prior art date
Application number
TW084103207A
Other languages
English (en)
Chinese (zh)
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW295683B publication Critical patent/TW295683B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Emergency Protection Circuit Devices (AREA)
TW084103207A 1994-10-13 1995-04-01 TW295683B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/322,811 US5457336A (en) 1994-10-13 1994-10-13 Non-volatile memory structure including protection and structure for maintaining threshold stability

Publications (1)

Publication Number Publication Date
TW295683B true TW295683B (https=) 1997-01-11

Family

ID=23256536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103207A TW295683B (https=) 1994-10-13 1995-04-01

Country Status (5)

Country Link
US (1) US5457336A (https=)
EP (1) EP0763258B1 (https=)
DE (1) DE69517978T2 (https=)
TW (1) TW295683B (https=)
WO (1) WO1996013057A2 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6241069B1 (en) 1990-02-05 2001-06-05 Cummins-Allison Corp. Intelligent currency handling system
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US5909502A (en) * 1996-09-17 1999-06-01 Cummins-Allison Corp. Software loading system for a currency scanner
US5886539A (en) * 1997-04-10 1999-03-23 Advanced Micro Devices, Ind Communication within an integrated circuit by data serialization through a metal plane
WO1998050892A1 (en) 1997-05-07 1998-11-12 Cummins-Allison Corp. Intelligent currency handling system
US6039645A (en) 1997-06-24 2000-03-21 Cummins-Allison Corp. Software loading system for a coin sorter
FR2766013B1 (fr) * 1997-07-10 1999-09-10 Sgs Thomson Microelectronics Piste d'interconnexion reliant, sur plusieurs niveaux de metallisation, une grille isolee d'un transistor a une diode de decharge au sein d'un circuit integre, et procede de realisation d'une telle piste
US5903521A (en) * 1997-07-11 1999-05-11 Advanced Micro Devices, Inc. Floating point timer
US5940623A (en) 1997-08-01 1999-08-17 Cummins-Allison Corp. Software loading system for a coin wrapper
US6122278A (en) * 1997-08-07 2000-09-19 Advanced Micro Devices, Inc. Circuit and method for protocol header decoding and packet routing
US5890100A (en) * 1997-08-19 1999-03-30 Advanced Micro Devices, Inc. Chip temperature monitor using delay lines
US5943206A (en) * 1997-08-19 1999-08-24 Advanced Micro Devices, Inc. Chip temperature protection using delay lines
US6192069B1 (en) 1997-11-03 2001-02-20 Advanced Micro Devices, Inc. Circuit and methodology for transferring signals between semiconductor devices
US6084933A (en) * 1997-11-17 2000-07-04 Advanced Micro Devices, Inc. Chip operating conditions compensated clock generation
US5852616A (en) * 1997-11-17 1998-12-22 Advanced Micro Devices, Inc. On-chip operating condition recorder
US6031473A (en) * 1997-11-17 2000-02-29 Advanced Micro Devices, Inc. Digital communications using serialized delay line
US5942937A (en) * 1997-11-19 1999-08-24 Advanced Micro Devices, Inc. Signal detection circuit using a plurality of delay stages with edge detection logic
US6078627A (en) * 1997-12-18 2000-06-20 Advanced Micro Devices, Inc. Circuit and method for multilevel signal decoding, descrambling, and error detection
US5900834A (en) * 1997-12-18 1999-05-04 Advanced Micro Devices, Inc. Doppler shift detector
US6091348A (en) * 1997-12-18 2000-07-18 Advanced Micro Devices, Inc. Circuit and method for on-the-fly bit detection and substitution
US6178208B1 (en) 1997-12-18 2001-01-23 Legerity System for recovery of digital data from amplitude and phase modulated line signals using delay lines
US6218880B1 (en) 1997-12-18 2001-04-17 Legerity Analog delay line implemented with a digital delay line technique
US6064232A (en) * 1997-12-18 2000-05-16 Advanced Micro Devices, Inc. Self-clocked logic circuit and methodology
US6046620A (en) * 1997-12-18 2000-04-04 Advanced Micro Devices, Inc. Programmable delay line
US6255969B1 (en) 1997-12-18 2001-07-03 Advanced Micro Devices, Inc. Circuit and method for high speed bit stream capture using a digital delay line
JP3049001B2 (ja) * 1998-02-12 2000-06-05 日本電気アイシーマイコンシステム株式会社 ヒューズ装置およびその製造方法
US6493461B1 (en) 1998-03-17 2002-12-10 Cummins-Allison Corp. Customizable international note counter
US6074917A (en) * 1998-06-16 2000-06-13 Advanced Micro Devices, Inc. LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices
US6063666A (en) * 1998-06-16 2000-05-16 Advanced Micro Devices, Inc. RTCVD oxide and N2 O anneal for top oxide of ONO film
US6309927B1 (en) 1999-03-05 2001-10-30 Advanced Micro Devices, Inc. Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices
US6162684A (en) * 1999-03-11 2000-12-19 Advanced Micro Devices, Inc. Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices
FR2803100B1 (fr) * 1999-12-28 2002-12-06 St Microelectronics Sa Dispositif de protection de lignes d'interconnexions dans un circuit integre
US6750157B1 (en) 2000-10-12 2004-06-15 Advanced Micro Devices, Inc. Nonvolatile memory cell with a nitridated oxide layer
DE10211359A1 (de) * 2002-03-14 2003-10-02 Infineon Technologies Ag Ermittlungs-Anordnung, Verfahren zum Ermitteln elektrischer Ladungsträger und Verwendung eines ONO-Feldeffekttransistors zum Ermitteln einer elektrischen Aufladung
US6731179B2 (en) 2002-04-09 2004-05-04 International Business Machines Corporation System and method for measuring circuit performance degradation due to PFET negative bias temperature instability (NBTI)
US7375393B1 (en) * 2005-01-27 2008-05-20 National Semiconductor Corporation Non-volatile memory (NVM) retention improvement utilizing protective electrical shield
US8816438B2 (en) * 2012-12-14 2014-08-26 Spansion Llc Process charging protection for split gate charge trapping flash

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69326749T2 (de) * 1993-02-17 2000-05-11 Stmicroelectronics S.R.L., Agrate Brianza Nichtflüchtiger Speicher mit Schutzdiode
US5315145A (en) * 1993-07-16 1994-05-24 Board Of Trustees Of The Leland Stanford Junior University Charge monitoring device for use in semiconductor wafer fabrication for unipolar operation and charge monitoring

Also Published As

Publication number Publication date
DE69517978D1 (de) 2000-08-17
DE69517978T2 (de) 2001-02-22
EP0763258A2 (en) 1997-03-19
WO1996013057A2 (en) 1996-05-02
EP0763258B1 (en) 2000-07-12
US5457336A (en) 1995-10-10
WO1996013057A3 (en) 1996-08-01

Similar Documents

Publication Publication Date Title
TW295683B (https=)
TW488033B (en) Method of fabricating a semiconductor device comprising a stack of silicon layers alternating with dielectric material layers
TW466711B (en) Non-volatile semiconductor memory device and data holding method of the same
TW421881B (en) Semiconductor device and manufacturing method thereof
TW520569B (en) Semiconductor storage device and the manufacturing method thereof
TW320773B (en) Multi-finger MOS component
TW200931758A (en) Two-way electrostatic discharge protection circuit
TW392328B (en) Electrostatic discharge protection circuit triggered by MOS transistor
TW449869B (en) Manufacturing method for stacked integrated circuit
TW457585B (en) Silicon on insulator thick oxide structure and process of manufacture
TW396505B (en) Dielectric separate type semiconductor device
TW412835B (en) Semiconductor device with decoupling capacitance and method thereof
TW573365B (en) Semiconductor integrated circuit device and manufacturing method of the same
TW432669B (en) Semiconductor integrated circuit device capable of achieving reductions in chip area and consumption power
TW456028B (en) Semiconductor device and process for manufacturing semiconductor device
TW383484B (en) Electrostatic protection structure for MOS circuits
TW445627B (en) Electrostatic discharge buffer apparatus
TW300326B (https=)
TW388066B (en) Method and apparatus for reducing process-induced charge buildup
TW495985B (en) Semiconductor transistor
TW512539B (en) Semiconductor device having constant voltage elements
TW497270B (en) Method for making semiconductors
CN105632998B (zh) 半导体装置
TWI271848B (en) Protection circuit, semiconductor device or integrated circuit and memory device
TW390013B (en) Serially connected diode structure with triple well and method for producing the same