TW293902B - - Google Patents
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- Publication number
- TW293902B TW293902B TW084112672A TW84112672A TW293902B TW 293902 B TW293902 B TW 293902B TW 084112672 A TW084112672 A TW 084112672A TW 84112672 A TW84112672 A TW 84112672A TW 293902 B TW293902 B TW 293902B
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- Taiwan
- Prior art keywords
- pixel
- imaging
- patent application
- item
- imaging device
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 claims description 329
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2964—Scanners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
- H04N5/321—Transforming X-rays with video transmission of fluoroscopic images
- H04N5/325—Image enhancement, e.g. by subtraction techniques using polyenergetic X-rays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9410973A GB2289979A (en) | 1994-06-01 | 1994-06-01 | Imaging devices systems and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW293902B true TW293902B (es) | 1996-12-21 |
Family
ID=10756020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084112672A TW293902B (es) | 1994-06-01 | 1995-11-28 |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB2289979A (es) |
| TW (1) | TW293902B (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2318411B (en) | 1996-10-15 | 1999-03-10 | Simage Oy | Imaging device for imaging radiation |
| JP2001518177A (ja) * | 1996-11-24 | 2001-10-09 | ジーイー メディカル システムズ イスラエル リミテッド | 固体ガンマ・カメラ |
| WO1999045411A1 (en) * | 1997-02-18 | 1999-09-10 | Simage Oy | Semiconductor imaging device |
| GB2332585B (en) * | 1997-12-18 | 2000-09-27 | Simage Oy | Device for imaging radiation |
| GB2332800B (en) * | 1997-12-18 | 2000-09-27 | Simage Oy | Device for imaging radiation |
| FR2776914B1 (fr) * | 1998-04-03 | 2000-06-23 | Thomson Tubes Electroniques | Procede d'acquisition de mesures et tomodensitometre a detecteurs groupes |
| GB2382666B (en) | 1998-06-05 | 2003-07-16 | Drs Hadland Ltd | Imaging arrangement and method |
| US6243441B1 (en) * | 1999-07-13 | 2001-06-05 | Edge Medical Devices | Active matrix detector for X-ray imaging |
| US6596483B1 (en) * | 1999-11-12 | 2003-07-22 | Motorola, Inc. | System and method for detecting molecules using an active pixel sensor |
| WO2003055393A1 (en) * | 2001-12-21 | 2003-07-10 | University Of Massachusetts Medical Center | Scatter reducing imaging device |
| EP1836508A1 (en) * | 2005-01-06 | 2007-09-26 | Philips Intellectual Property & Standards GmbH | Pixel implemented current to frequency converter |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04172085A (ja) * | 1990-11-05 | 1992-06-19 | Mitsubishi Electric Corp | 固体撮像装置 |
| GB2262383B (en) * | 1991-12-09 | 1995-06-14 | Sony Broadcast & Communication | Charge-coupled image sensor |
-
1994
- 1994-06-01 GB GB9410973A patent/GB2289979A/en not_active Withdrawn
- 1994-10-21 GB GB9421289A patent/GB2289980A/en not_active Withdrawn
-
1995
- 1995-11-28 TW TW084112672A patent/TW293902B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB9410973D0 (en) | 1994-07-20 |
| GB2289980A (en) | 1995-12-06 |
| GB2289979A (en) | 1995-12-06 |
| GB9421289D0 (en) | 1994-12-07 |
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