TW293902B - - Google Patents

Description

Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ 93902 Α7 Β7 5. Description of the invention (1) 1. Background of the invention: a. Field of the invention: The present invention relates to imaging devices, systems and methods, and is particularly relevant Semiconductor pixel imaging device used as image detector, M and related imaging system and method using the pixel semiconductor imaging device. b. Description of the prior art: In the prior art, two basic types of semiconductor pixel devices are known: 1 > 霣 荷 合 合 器, also known as 霣 荷 合 合 装置 (Charge Coupled Devices, hereinafter referred to as CCD > And 2) Pulse counting semi-conducting skull pixel device. I have been using CCDs for 15 years, and they have generally been used as circle image detectors (for example, see S.M Sze "Physics of Semiconducting Device" in 1981, the second vendor.) All available CCDs are made of silicon technology. The principle of the CCD lotus is based on the fact that when an appropriate voltage is applied through the gate of the gate, the silicon atoms of the Dong Dong become in a state of exhausting the majority of carriers (such as holes), and produce aggregates Region II (depletion zone). This depletion region reaches a potential well and forms a certain depth ratio with the applied mold pressure. The maximum load that can be stored in the CCD pixel later depends on the area under the pole, the applied voltage, the dark flow or leakage from the bulk silicon atoms, and the II pole and the bulk silicon The thickness of the gasification layer in between, and the dark mold stream continues to fill the potential well. These factors determine the effective CCD load storage capacity. When electrons accumulate in the potential well and need to be read with M *, that is, pulsate the electric potential of each gate gate, and make the sub-packet stored under one gate start to clock towards the next gate Wait. The engraved bag will never leave the silicon paper. The standard of China National Standard (CNS) A4 (210X297mm) is applicable. 5 1 ^. 1 I Packing—Booking ^ Travel (please read the precautions on the back before filling this page )

A Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (2) The substrate, and in order to read the stored mold lotus at a certain pixel location, all the in front of it must be read out in a continuous flip Other pixel content. During the course of the process, no other charge can be accumulated, because the channel may destroy the charge content information of each pixel, and then it may break the resolution and contrast of the color image. Therefore, during the yield period, the image detector has no effect. The above process requires at least 3 slap gates per pixel. CCDs can be used to detect, focus and read out the light load generated by light and / or radiation, or can be used as a read-out device only to read the light generated by another detection mechanism (such as a photodiode) Yuan He. When used to detect incoming radiation and read signals * CCDs have an additional limitation of low efficiency. Especially in high-energy radiation (such as X-rays over several thousand volts), CCDs are used with light-converting screens, which can convert X-rays into visible light, where the CCD is more sensitive. However, the spread of light will deteriorate the resolution and contrast. Therefore, the lotus is used as a bow CCD in the following manner: 1> The charge is concentrated in the depletion zone generated by an applied mold pressure. For each pixel, the depletion region has the shape of a well and confines the beneath the electrode gate, and M remains inside the bulk silicon volume. 2> Pulse each voltage to each gate gate, so that each value packet can be sent to the silicon body of the next pixel by M clock pulse. The small purse is always kept on the inside of the silicon substrate, and encounters each pixel one by one in a clock pulse to a common round-out device. During this process no additional "Dutch" can be gathered. The above result is that the CCD is a device with two substantial restrictions: This paper uses the Chinese National Standard (CNS) A4 specification (2 丨 0x297mm) 6 (Please read the notes on the back first (Fill in this page)-Installation · Order 5. Invention A7 B7 • Explained (3) Printed by the Ministry of Economic Affairs Central Bureau of Accreditation Consumer Cooperative 1) There is a dynamic range of compromise. Generally, a single CCD can gather 100,000 to 700,000 children. The reason for limiting the dynamic range is that the dark current in the silicon gate will fill the potential well, and the surface of the electrode gate that accumulates charge accounts for up to one-third of the total pixel area (thus not using the full load of the pixel Storage capacity), and the thickness of the oxide layer that is also related to the storage capacity must be thickened, M endures the sharp drowsy pulse required for the readout (note: the thicker the oxide layer, the charge that can be stored in the potential well Less). 2) Long inert time. The inert time required for this reading is quite long. In many cases, this situation has prevented CCDs from being used for rapid dynamic multi-frame image aggregation. Included in patent applications GB-A-2249430 and GB-A-2262383 are two examples of the use of CCDs. The two applications are about ways to overcome the inherent limitations of these CCDs. The semiconductor pixel detector includes a semiconductor substrate provided with multiple electrodes, which can apply a depletion voltage to each pixel and define a charge aggregate. When absorbing a photon or «ionizing radiation across the depletion region of the semi-conductor skull substrate, the electronic signal can be read out with a simple buffer. The buffer circuits may be located on the same substrate (compare to EP-A-0,287,197) as the charge aggregates, or may be located on a separate substrate (compare to EP-A-0,571,135), The separate substrate is mechanically bonded to a substrate provided with such charge accumulation, for example, in conjunction with the conventional collision bonding technology (collision bonding is a technology known every 10 years or more). These pixel detectors operate in M pulse mode. The pixels can be read out continuously or successively at a sufficiently fast rate. ΜImplement a pulse of this paper. The paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public daughter) --- --- ^ --- I installed ------ order ------ 1 line (please read the precautions on the back before filling in this book) A7 B7 printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 2. Description of the invention (4) Counting chess or simple pulse imaging. In any system, every time there is an energetic charge due to a high-energy ray or light, its eye is to read it out and process this information. These pixel detectors can reduce the required readout speed * because they have a higher commutator slice and more parallel readout channels. However, they cannot correspond to the use of high density, because these readouts The overflow or counting capacity will saturate * and therefore damage the contrast of the image. In some of these devices * the simultaneous shot "will cause a suspicious and" ghost "impact, some will not be resolved and the resolution will be reduced Worse. Although some devices can directly detect the incoming ray, because it is based on single pulse counting The operation and imaging based on discrete counts have many limitations. We will discover from the above that all currently available devices have various limitations that cannot be resolved. Especially CCDs can gather «charges from successive impacts, but only gather To the limited extent possible in the erbium potential well in the silicon substrate, Yau essentially limits its dynamic range. It is also due to the method of aggregation of the charge, that is, the M clock pulse method sends the content of the pixel charge to Zheng Jiezhi The pixel storage unit (the same is usually the same silicon substrate), and the M-timing chess pattern produces a «give up effect. Therefore, until all pixels are read out like a sequence of timing, a CCD cannot gather a new one Color image frame, because the additional rays and / or rays cannot be recorded at a pixel position during the readout process—pair to pair *. Therefore, during imaging, limited dynamic range and long inert time It is the second major CCD limitation. On the other hand, some semiconducting pixel device Li has proposed to directly read the content of the pixel every time a collision is detected. Some devices are in single pulse The size of this paper is in accordance with Chinese National Standard (CNS) Α4 specification (210X 297mm) -8 _ d ^ — I — ^ Pack ~~ Order nf (please read the precautions on the back and fill in this f) Central Ministry of Economic Affairs The quasi-bureau consumer labor cooperative prints the deduction 〇2 Α7 · _ Β7_ 5. Description of the invention (5) The counting mode is a lotus, and it is damaged due to saturation problems at a high counting rate. These traditional one-click counting devices have A very small dynamic range. 2. Introduction to the invention: Accordingly, the object of the present invention is to provide an imaging device based on different methods that can alleviate and / or solve the problems of the prior art. According to one of the inventions The point is that it is provided with an imaging device for imaging radiation. The imaging device includes a row of pixel units containing a semiconductor substrate, the substrate has an array of pixel detectors that can generate charge in response to entering the radiation, and a corresponding array of Pixel circuits, each pixel circuit is connected to a different pixel detector, using K to accumulate the charge from the pixel detector into the radiation line, these pixel circuits can be addressed separately Comprising a circuit diagram for the striking accumulation of charge from a rainstorm successive radiation detector pixels on each line. The present invention provides an imaging device, which can be described as an active pixel semiconductor imaging device (Active-pixel Semiconductor Imaging Device, hereinafter referred to as AS ID). Embodiments of the imaging device according to the invention are particularly suitable for high-energy radiation imaging, such as X-ray, / 3-ray and α-ray real-time imaging. The invention can also be applied to imaging of other radiation patterns, including visible light, for example. During the irradiation, an AS ID can actively gather small lotus for each pixel. It detects incoming rays directly on one of the pixel unit detectors of the semiconductor substrate, and collects charges in an active pair of paths corresponding to the pixel unit detectors (by directly collecting this charge into various charge values, Or convert it to a mold pressure or current, and gather the final voltage or current). With the help of the chopsticks, the active circuit of each pixel can be addressed independently, that is, with all other pixels «Luben paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) J. ^ I binding {silver (please (Read the notes on the back before filling in this page) A7 B7 5. The S ^ S9〇2 invention description (6) printed by the Employee Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs (6) is irrelevant (for example, Μ random or sequential order), then The stored Xiao He can be read at any time during or after Nao Zhao. Therefore, in one embodiment of the present invention, the charge is concentrated in the whistle accumulation circuit (such as the gate of an integrated transistor or an integrated capacitor). It does not require and does not use depletion layers and potential wells as in the CCD paradigm. It is possible to optimize an S-charge storage device, such as a Field Effect Transistor (hereinafter referred to as FET) or a capacitor, so that substantially all the pixel circuit area is covered with the oxide layer of the minimum thickness. These two factors maximize the storage capacity of the load, for example, it is more than two-level magnitude than the CCD. Furthermore, each pixel does not interfere with its neighboring pixels. The independent entry and exit of each pixel can present a faster dynamic image frame aggregation, which is not possible with CCDs. An embodiment of the present invention can also overcome the previous limitation of each pulse-counting pixel device during off-speed counting, where hundreds or thousands of high-value pulses can be gathered before reading. Therefore, the number of read channels can be reduced without compromising the performance of the device. The active circuit is preferably located near the pixel detector (whether it is integrally formed with the semiconductor substrate containing the pixel unit detector or on a substrate to which it is bonded), and has a sufficient dynamic range , So as to gather the corresponding charge generated by hundreds or thousands of radiation strikes on the corresponding pixel detector. The readout of the active pixel circuit can be designed to be very fast and has nothing to do with all other pixels, so there is actually no dead time, so that the active pixel and the corresponding pixel unit detector can be immediately ready to continue to turn over and gather Radiation impact. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----? ---: --- ^ 丨 installed ------ order ----- person line (please (Read the notes on the back before filling this page) 10

Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (7) During the radiation period, each detected element and the associated active circuit form a dynamic active imaging pixel that can enter and exit at will and can accumulate charge at will ( Whether it is used directly as a m charge or a voltage or equivalent current), and can be released during or after irradiation. The content of each pixel is not sent to neighboring pixels one after another, but is ceded independently of all other pixels. The reading speed of the readout data and the level of parallel or continuous signal processing can be optimized, with the combination of its radiation intensity and the time available for gathering an image frame. Accordingly, according to one imaging device of the present invention, the charge can be collected by radiation or light impingement of the bighead carp, using a large dynamic range of plaque and / or a capacitor, the transistor and / or the container are paired One corresponding way is provided with a detection pixel unit. In view of the fact that CCDs use a depletion layer on the inside of a silicon substrate to store charge in a potential well, an ASI D can concentrate the charge on the gate of a transistor and / or capacitor. Therefore, an ASID will have a dynamic range of up to two magnitudes higher than the CCD. During image frame accumulation, the same charge accumulation pixel circuit element also allows the reading of each value of the accumulated charge value, especially when there is no dead time, and the charge value is in a one-to-one relationship with the detected pixel element . An AS ID can also reduce the limitations of conventional semiconductor pixel devices. These conventional devices operate in M pulse counting mode, because they implement imaging in a manner proportional to the total accumulated charge, not proportional to the number of radiation strikes. Although the conventional pulse counting pixel device suffers from saturation during high-speed counting, the AS ID can gather hundreds or thousands of impacts before reading. A longer charge accumulation period (possibly from several seconds to about 1 second) can reduce the effectiveness of resetting these pixel roads. Therefore, the total inert time of each pixel path only accounts for a very small part of the charge accumulation time (or active time). This paper scale is applicable to China National Standard (CNS) 84 specifications (210X297mm) 11 --- j ------- 丨 installed ------ order ----- 1 silver (please first Read the notes on the back ^ item and fill in this page) A7 _ B7 printed by the Employee Consumer Cooperative of the Central Department of Economic Affairs of the Ministry of Economic Affairs 5. Description of the invention (8) I have found that the present invention can be particularly applied to high-intensity imaging applications. Through the various embodiments of the present invention, all the problems of the previous pixel detectors can be overcome, such as unrealistic readout speed, unclear and "ghost" impact, low efficiency, low dynamic range and high The problem of inert time. However, I will find that the present invention is not limited to high-energy and high-intensity applications, and embodiments of the present invention can also be used at lower energy levels (such as in ultraviolet, visible, or infrared wavelengths) and low-intensity applications (in Astronomy) found its use. Each pixel circuit preferably includes a charge storage device for collecting charge, such as a capacitor and / or a transistor. In a preferred embodiment of the present invention, the charge is concentrated on the gate of an FET, which preferably forms one of a pair of FETs * and is connected as an amplifier stage of a gate-ground amplifier. Each pixel path preferably also includes a path design for selectively resetting the charge storage device, for example, after reading out any charges stored on it. A preferred embodiment of the present invention includes the first and second two-value FET switches. The first FET switch pseudo-responds to an active signal, and connects the load storage device to a stud-out line, using the The accumulated charge; its second bow FET open relationship responds to a reset signal to ground the charge storage device and reset the charge storage device. In some applications, such as 7-camera and nuclear science, the pixel size may be 1 «m wide or less, preferably about 350 m wide. In other applications * The pixel element size may be about 150 mm wide or less, preferably about 50 mm wide or less, and more preferably about 10 mm wide, and has a size of 200 mm. The thickness of the substrate between meters and 3 mm. The standard of this paper is applicable to the Chinese National Standard (CNS & Α4 specification (2 丨 ΟX 297mm) -12-; 5 J · Packing— ~ booking line (please read the precautions on the back before filling in this page) Central Standard of the Ministry of Economic Affairs 29 ^ 9〇2 at Β7 printed by the Bureau Cooperative Consumer Co., Ltd. 5. Description of the invention (9) The pixel circuits can be formed integrally with the substrate and flush with the corresponding pixel detector. Another option is to The pixel circuits are made in another substrate, the other substrate is merged into the pixel circuits and broadcast to the substrate incorporated into the pixel detectors, and each pixel circuit thereof is aligned and coupled to Corresponding pixel detector. In a specific embodiment of the present invention, the array includes a single row of pixel detectors and associated pixel circuits to form a slit-type imaging device, or includes multiple rows of pixel detectors and associated pixels A groove-shaped imaging device is formed by the path. In this embodiment, the pixel paths used by each pixel detector can also be arranged in a broadcast direction, and adjacent to the corresponding pixel detector. Imaging with one of the imaging devices The rules include the use of The control electronics of the device, which includes addressing logic circuits for addressing individual pixels, is used for reading out the accumulated loads from the pixel circuit and selectively resetting the pixel circuit. The addressing The logic circuit preferably includes a mechanism for connecting the output circuit of the pixel circuits to the output point of the imaging device with M, a mechanism for supplying the readout start signal to the readout start point of the pixel circuits with M, and a means for supplying The mechanism for resetting the signal to the reset points of these pixels. The mechanism for connecting the round-out line may include a shift register or a counter, and use Μ to connect the pixels of each column successively to the pixels. Line to the round-out end of the imaging device. Similarly, the mechanism for supplying the readout start signal may include a shift register or a counter, and use M to continuously supply the readout start signal to the pixels of each row of pixels. The mechanism for reading the start-in input and / or supplying the reset signal may include a shift register or a counter, and use M to continuously supply the reset signal to the pixels of each row of pixels. National Standard (CNS) A4 specification (210X297mm) 13 ---- 5 ---; --- f · Install ------ order ------ ^ step on (please read the back side first (Notes need to fill out this page) A7 B7 printed by the Ministry of Economic Affairs, Central Bureau of Preservation and Consumer Cooperatives V. Description of the invention (10) The key entry. Therefore, in one preferred embodiment of the present invention, the addressing logic The circuit includes first, second, and third value shift registers. The first bow shift register uses M to connect each column of pixels to the wheel out line of the pixel circuits to the wheel out end of the imaging device. The second The shift register is used to supply the read start signal for each row of pixels to the read start input end of each pixel road, and the third shift register is used to continuously supply the reset signal to each row of pixels. The reset input terminal of each pixel circuit. In another preferred embodiment, a counter can be used to implement the same control signal * The counter can generate row and column addresses, and these addresses can be decoded into round selection, reset, and read start signals. The control theory may include an analogue to digital converter (hereinafter referred to as ADC) for converting the charge reading from a pixel circuit into a digital charge value. At least part of the control electronics design can be incorporated into the semiconductor substrate, and the pixel roads are formed on the substrate. The imaging system preferably includes a color image processor connected to the control electronics design for processing digital load values from various pixel circuits so that a color image can be formed and displayed on a display device. In order to optimize the display of the captured color image, the processor will determine the maximum and minimum charge values used to display pixels, and assign the limit grayscale or color extreme value to the maximum and minimum 18 charge values, and according to a sliding The ruler assigns grayscale or color values to a different pixel | The slide rule is between the two extreme values and depends on the ® charge value of the pixel. It is best to distribute these grayscale or color values according to the following formula: This paper should be suitable for China National Standard (CNS) A4a grid (2 丨 Qx 297mm) —η-1 ^ 1 4 IH ^ I HI > «l ^ i In · 1 II In m. HI --SJ1 ^ 1 ^ 1. ^ 1---ιί 1 ^ 1 y- (please read the notes on the back before filling out this page) B7 Ministry of Economic Affairs Printed by the consumer cooperative V. Description of the invention (11 (Charge value of pixel i-minimum charge value) Gray value of pixel i = minimum gray value +-x (maximum gray value-minimum gray value) (maximum charge value -Minimum charge value) In a preferred embodiment of the present invention, an imaging system includes most imaging devices as defined above, and M tiles are connected together to form a photosensitive screen surface. This can Manufacturing large-area imaging devices without the yield problems normally encountered in large-surface-area integrated devices. The photosensitive screen surface may include multiple rows of imaging devices, and the adjacent rows of imaging devices are located in The column direction is offset. The imaging system preferably includes a mechanism for straddling or removing the imaging device and / or an object to be imaged, so that A color image is gathered above the entire image area. In one embodiment, the imaging system includes two imaging surfaces, each surface includes two photosensitive screens of one imaging device, and the two imaging surfaces are substantially parallel to each other. Lined up and separated from each other * and an object to be imaged is placed between the two surfaces, the two photosensitive screen surfaces are laterally offset from each other * Μ essentially gives a complete image of the object. This is essentially in a certain In some applications, complete imaging is possible without the translation mechanism used by these imaging planes. The image wheels of most tile imaging devices are preferably connected to a common multiplexer. The output is connected to a common ADC. Another option is that most tiled imaging devices can be connected like a daisy garland, and then converted to a common ADC. You can also add M addresses to each pixel circuit to The accumulated charge can be read at a rate to optimize the resolution of an ADC that can convert the analog aggregated iguana value into a digital value. These methods can provide design performance, so the price is more (more , The less ADCs) and the image comparison (the less the multi-pass painting, the more ADCs) The paper wave scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 15 1--7--, --- f I installed ------ ordered ------ * silver (please read the precautions on the back before filling this page) A7 B7 i, the invention description (12) is optimized. As mentioned above, In the imaging system including one or more slit-shaped or groove-shaped image-forming devices, a mechanism for moving the slit-shaped or concave image-forming device with M is provided, which can be used for imaging The device moves in the direction of the longitudinal axis so that a complete image can be gathered above an imaging area. According to another embodiment of the present invention, it is provided with a method of operating an imaging system having a slit-shaped or groove-forming image device as described above, and the method includes moving in a lateral direction The slit-shaped or groove-shaped image-forming device is read from the pixels of the slit-shaped or groove-shaped image-forming device at a rate corresponding to the movement of the imaging device. For the charge, the moving distance is equal to or less than half the size of the pixel in the direction of motion. According to another aspect of the present invention, it is provided with a method of operating an imaging system including one or more slit-shaped or groove-shaped imaging devices as described above, and the method includes optimization by The following parameters are used to minimize the scattering effect of radiation: the distance between the radiation source and the object to be imaged; the distance between the object to be imaged and the slit-shaped or groove-shaped imaging device; And the slit shape or groove forms the width of the image device. Printed by the Beigong Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs

Hi J— I I-- 11 ^ I-(Please read the precautions on the back before filling in this page). The present invention also provides a method of collecting the small charge values collected by Μ imaging, which correspond to one pixel The position of each pixel in the array, such as the m charge value accumulated at each pixel position of the imaging device described above, the method includes:-determining the maximum and minimum aggregate values for each pixel in the area of the pixel array to be imaged; This paper scale is applicable to China National Standard (CNS) A4 specification (2 丨 0X297mm) 16 1 C.

Printed by the Beigong Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs

5. Description of the invention (B-assign the gray or color value to the maximum and minimum aggregate value at the gray or chroma extreme value to be imaged; and-specify the gray or color value to the aggregate value of each pixel, such pixels The aggregation value is proportionally distributed according to the two extreme values; and-the grayscale or color value specified by imaging at the pixel position of each image. In other words, for each part of the color image captured by the imaging device according to the invention , The charge density of all pixels to be displayed can be compared, the highest and lowest charge density points have been designated as a color value, and are located at the two extreme values of gray or chromaticity used. The remaining pixels are given a The value of the ratio of chromaticity or chromaticity, which is based on the amount of charge accumulated in each pixel. The present invention also provides a method for automatically optimizing imaging, which uses, for example, an imaging system as described above, and For different imaging applications, the radiation entering here leaves a different power signal in the pixel detector of a semiconductor substrate. This signal depends on the semiconducting material used, material or composition, placement and entry Depending on the type, the method comprising:

I-use the center of gravity technique to determine the best resolution expected;-determine the expected efficiency, which is a function of the radiation pattern and energy management; and-determine the size and thickness of a pixel, which is a selected radiation pattern, energy And a function of the selected semiconducting snakehead material or composite. This method may also include a step of automatically selecting an imaging device * The device has a determined pixel size and thickness. This method can automatically perform image processing for different imaging applications. This paper standard is applicable to the Chinese National Standard (CMS) A4 specification (210X297 mm) 17 Binding 11 ^ (please read the precautions on the back before filling this page) A7 B7 ^^ 3902 V. Description of the invention (14) (please read the precautions on the back before filling in this page), here it depends on the semiconductor material or composition used, and the radiation it enters will be related to the energy and entry The type of radiation line leaves a different electrical signal. According to the method, a center-of-gravity technique can be used to identify the optimal resolution of the expectation, where each radiation step inside the semi-conductor is aggravated by energy loss, or by the small charge generated in the step shift The signal is equivalent to aggravate. Therefore, the resolution can be determined by the average value of the increased charge. For the same reason, the expected efficiency depends on the radiation pattern and the energy function. For each ASID semiconductor material or composite, there is a material library that can provide values for various radiation types and energies, so that the design specifications can be optimized immediately and automatically. The present invention also provides a method for automatically detecting and eliminating detected pixel values. The pixel values represent the incoming radiation on a pixel unit of an imaging device. The imaging device is, for example, as defined above. The method includes :-Compare the detected pixel value with a critical value, the critical value is two-the smallest detected charge value, and the expected radiation is directly entered, and-the pixel value detected by the release line is less Those who are above this threshold. Printed by the Central Ministry of Economic Affairs and Industry Consumer Cooperatives. Therefore, the argument of the present invention enables incoming radiation (especially low-intensity radiation) scattered before entering the imaging device to be expelled before processing. The creation is achieved by identifying the detected radiation, and this identification function is based on the energy stored in the M power signal type. Because the scattered radiation will lose some of its energy, it will not pass through the minimum energy cutoff value. Another argument of the present invention can also provide a method for real-time imaging of organic or inorganic substances, which includes :-Use a roll that can produce X-rays, 7 rays, rays or alpha rays. The size of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm)

Printed by the Consumer Labor Cooperative of the Central Sample Falcon Bureau of the Ministry of Economy V. Description of the invention (is) The source irradiates the object;-Detecting unabsorbed radiation at a semiconductor imaging plane or planes of one of the imaging devices as described above Line, or detecting radiation that escapes the selected area of the object, thereby collecting the incoming radiation charge from each pixel unit of the imaging device in the active circuit of each pixel unit; Addressing each active image road, using M to compile the collected image data;-processing the image information to provide pixel data of the image; and-displaying the image pixel data. Therefore, in addition to providing a new imaging device, the present invention also provides a system for using the imaging device. In the first preferred architecture * the imaging pixels are arranged in a matrix of MMX N, where M and N can be up to a few, thus providing a full-field imaging plane. In another preferred structure, the imaging pixels are arranged in a slit or groove type, have thousands of rows, and each row has several columns. At a certain speed, the slit or recess moves above the surface to be imaged, and the slit (or groove) frame is read out fast enough so that it moves between adjacent frames in the direction of the movement The scanning distance is less than half a pixel. With this frame structure and operating wedge type, it is possible to achieve a little line resolution along the direction of motion, which is equal to the pixel size in the same direction. Therefore, it may improve the position resolution by a factor of two, but it can be obtained by a full-field imaging plane or a conventional slit or groove that is not operated in the mode described. In another preferred configuration, the above-mentioned slits (or grooves) are arranged parallel to each other on the same plane, and the longitudinal axis of each slit (or groove) has a constant distance between them. Therefore, if there are η such slits (or grooves) and the size of the captured paper is applicable to the Chinese National Standard (CNS) Α4 specification (2Ι0Χ297mm) 19 I-II -„Ί (Please read the precautions on the back before filling this page)

Printed by the Employee Consumer Cooperative of the Central Bureau of Precision of the Ministry of Economic Affairs. 5. The total distance of the invention description (l6) is X centimeters, so each slit (or groove) only needs to scan x / n centimeters. This will reduce the need for a high-speed scanning mechanism, and the same image can be formed in a unit time period, so that the X-ray light source can be operated at a lower current (single slit / groove has η times lower flow) ° The present invention also provides a method of operating the above imaging device or imaging system, which includes an M-rate reading of the accumulated charge from each pixel to optimize the conversion of the analog aggregate load into digital values An ADC resolution 0 The present invention also provides various methods that utilize the above-mentioned devices and rules. Therefore, the present invention provides active focused analog imaging that can directly detect high-energy rays, as opposed to traditional digital imaging techniques based on impact counting. According to the present invention, instead of a few points, a value of the charge (or equivalent current or pressure) is gathered, which corresponds directly and linearly to the total energy of the starting ray. CCDs can only provide direct imaging at very low energy (near the visible spectrum). For high-energy applications (X-rays over 10 thousand electron volts), CCDs are operated with conversion screens that convert high-energy radiation into visible light wavelengths, and CCDs are more sensitive to such wavelengths. During this process, the generation and diffusion of light will actually deteriorate the contrast and resolution of the image. In addition, for all practical purposes, CCDs are limited to the use of silicon. However, we know that silicon is a relatively low-density material, and has extremely low efficiency for detecting rays with energies exceeding several thousand volts. According to one of the arguments of the present invention, a method for converting accumulated charges into an image is provided, and M provides the highest contrast and resolution that can be broadcast for a known image portion. For each part of the image, you can compare it by ------_--- j- 丨 install ------ order ----- j line (please read the notes on the back first (Fill in this page again) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 20-20 Printed A7 B7 by the Beige Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Invention description (17) The density of the load is linked to the purpose. The highest and lowest density points can be specified as one of the two extreme values of gray or chroma. The rest of the points are given a value by the grayscale or chroma ratio, which is based on the accumulation of those pixels (or the equivalent of rolling or rolling). The present invention also provides a method of minimizing the resolution effect of ray images scattered before entering the imaging device. According to this, when the active gathering analogue of the direct detection of the rays has an effect, these scattered rays have a very small component in the contrast, because they will store very little energy in the imaging device. Corresponding to the "non-scattered ray" charge value (or equivalent galvanic flow or m pressure) > its storage energy is caught higher than the former. Therefore, when each pixel specifies a chromaticity or gray value according to the accumulated charge value during image processing, the effect of diffuse radiation can be minimized. The invention also provides a method of excluding coherent or incoherent valence scattered rays before entering the imaging device. A groove technique is used for the effect, which has a collimated source and can be adjusted to emit various rays and aim at an imaging groove. By optimizing the distance between the light source and the observed object, the distance between the observed object and the imaging recess, and the width of the groove, Di can determine a geometric shape, which can diffuse the rays The detection becomes the least. It is because the diffused rays "see" a small phase space and "have no reason" to enter the thin imaging groove. Because it is a know-how of geometry technology and painless ray energy, the method is particularly effective. The squeezed rays, whether they are scattered incoherently and have lost some of their energy (this is black collar scattering), or are scattered and retained all their energy (this is Rayleigh scattering) * The most unlikely detection. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm> 21 ----:-^ --- 一-装 ------ 定 ------ 1 # (please first (Read the notes on the back and fill in this page)

Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (18) The present invention also provides a method of excluding detected radiation that has been scattered when entering the imaging device in low-intensity applications. By using a threshold M, the detected radiation can be set lower than a predetermined value, which can exclude some of its initial energy and energy that has been irrelevantly scattered by the detection area. The present invention can also The specific architecture of the imaging application is automatically optimized. Depending on the semiconducting snake material used and the radiation pattern and energy, it will register a different electrical signal. Using a center of gravity method, we can find an optimal resolution expected. It can also determine an expected efficiency, which is a function of the radiation pattern and energy. For each semiconductor pixel material or composite *, a database is provided to provide various radiation patterns and values required for energy *, so that the design specifications can be optimized immediately and automatically. The above imaging device or imaging system can be used for traditional X-ray, thoracic X-ray, X-ray mammography, brain tomography, X-ray bone densitometry, 7-ray nuclear radiography, single-photon radiography 7 cameras of tomography (SPECT), positron emission tomography (PET), X-ray dental imaging, X-ray panoramic dental imaging, using isotopes in deoxyribonucleic acid (DNA), ribonucleic acid (RNA), and protein strings Sequence, directional hybridization, DNA hybridization, RNA hybridization and hybridization of protein or whole protein / 3-ray imaging, general Lu-ray imaging, autoradiography using chromatography and polymerization reaction, product quality control X-ray and 7-ray imaging, non-destructive testing and real-time and online monitoring, and the use of radiation, including visible light safety control rules and real-time imaging. 3. Brief description of the picture: --- Ί ------ f.-install ------ order ------ < spicy --- (please read the notes on the back before filling in This page) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 22 A7 xr ^ Bd〇2 __ B7 5. Description of the invention (19) The following only refers to the attached drawings and illustrates this Exemplary embodiments of the invention • Among them: FIG. 1 is a schematic block diagram of an imaging system, which includes an embodiment of an imaging device according to the present invention; FIG. 1A is a schematic diagram of an FET; A schematic circuit flowchart of an example of a pixel circuit, which is used for the imaging device according to the present invention; FIG. 3 is a partial schematic flowchart of an imaging array and control electronics design, which is used for an imaging device according to the present invention; Li is a partial schematic circuit diagram of the imaging array and control electronics design, which is used in an imaging device according to the present invention, the imaging device is provided with a pixel unit block; FIG. 5 is a schematic diagram indicating one of most imaging devices, which are based on this The imaging device of the invention is laid like a tile surface to form a photosensitive screen surface FIG. 5A is a partial schematic diagram of a control electronic design according to an embodiment of the present invention, which includes a plurality of imaging devices that are covered to form a photosensitive screen surface; FIGS. 6A to 6C are schematic diagrams of an imaging device in the form of a tile surface; FIGS. 7A to 7D illustrate an example in which, in conjunction with the application of the present invention, the 2 imaging planes are placed on opposite sides of the object to be imaged; the eighth circle is a schematic circuit diagram of another pixel circuit example, which is used for According to the present invention-the imaging device; Figures 9A and 9B are partial schematic block diagrams of the imaging array and control connection device of the embodiment of Figure 8; Figure 10 is a partial cross-section of an example of an imaging device according to the invention 23 The size of this paper uses the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) -------- ί. Loading ------ order ------ {ball (please Read the precautions on the back first and then fill out this page) Printed by the Employee Consumer Cooperative of the Central Department of Economics of the Ministry of Economic Affairs V. Description of Invention (2〇) A7 B7 Printed by the Cooperative Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics. Picture 11 is another pixel "Indications of Road Examples" Road Circle, which is used according to this Figure 12 illustrates an imaging device according to the present invention, which uses a slit or groove type imaging device; Figure 13 illustrates optimized parameters for a slit or groove type imaging device, Μ reduces its scattering effect; and the 14th circle is a schematic diagram of / 3 rays passing through the silicon element. 4. Description of the preferred embodiment: FIG. 1 is a schematic diagram of an application example of an imaging system 10, which includes an embodiment of an imaging device according to the present invention. The application is related to the imaging of an object 12 subjected to radiation 14. The radiation may be, for example, X-ray radiation, and the object may be part of a human body. The imaging device includes an active one-pixel semiconductor imaging device (ASID> 16, this AS ID includes a majority of pixel units 18. The imaging device can directly detect high-energy radiation, such as X-rays, 7 rays, / 8 rays, or ct Rays, and the concentration of each pixel unit represents the radiation value incident on the pixel unit. This is the use of freely accessible, active, and dynamic pixels located on or near a corresponding pixel unit detector. The ASID can be designed A single-half-conducting lamina substrate (such as silicon element), which has a pixel unit, and includes a pixel detector 19 and an active pixel mold 20. Another option is to design the AS ID on two substrates , Its one piece is provided with an array of pixel detectors 19, and the other substrate is provided with an array ----; ------ ^ -installed ------ order ------ j line (Please read the precautions on the back before filling in this page) This paper size is applicable to China National Standard (CNS) Α4 specification (210X 297 mm) 24 Α7 Β7 printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy V. Description of invention ( 21) the active pixels 霣 路 20, the two substrates are For example, the conventional collision bonding technology is mechanically connected to each other. In fact, each pixel unit 18 is defined by an M electrode (not shown) on the substrate, and these electrodes can apply a bias voltage to define the detection of the pixel unit 18 Area (that is, the pixel detector 19). The active pixel circuit 20 (such as transistors, capacitors, etc.) in the form of a small structure can be defined on each pixel unit 18 or located in the associated At one of the corresponding positions on the two substrates, for example, when a photon or radiation particle is incident on the depletion region of the pixel unit 18 * it can accumulate the charge generated in the pixel detector. The size of the source pixel circuit 20 and the pixel detector 19 can be in the order of several tens of meters (for example, 10 to 50 meters). The following describes various examples of the active pixel circuit with reference to FIGS. 2, 8, and 11. As described above As mentioned above, the active pixel circuit 20 can be formed with the semiconductor semiconductor 16 on the pixel unit 18 as part of the semiconductor processing process. Special processing techniques can be used to integrate the detected pixels Image on the same chip Circuit. Another option is that the active pixel circuit 20 can be fabricated on the second wafer, and the pixel detector 19 corresponding to each pixel unit 18 on the first wafer can be assigned. The two components can be used later. Connected together by known methods, such as collision bonding technology, the active pixel circuit 20 of each pixel unit 18 is located near (behind) the corresponding pixel detector 19 of the pixel unit 18 and placed on it. The pixel detector 19 is made with a depletion region, so that when a photon is photoelectrically absorbed in a semiconductor substrate 16 of a pixel unit 18 to generate a charge, or when a charged ionization ionizes a pixel Unit 18 semiconductor substrates. The paper size is in accordance with Chinese National Standard (CNS) Α4 specification (210Χ297mm) ^ -binding I? Line (please read the precautions on the back before filling this page) 25 A7 B7 Ministry of Economic Affairs Central Standards Bureau Printed by the Industrial and Consumer Cooperative Society 5. Description of the invention (22 In the depletion region of 16, a small pulse flows from the depletion region of the semiconductor substrate to the active pixel circuit 20 of the pixel unit 18. After sugar, a relevant value of the electronic pulse is collected in an active circuit element, which can be directly used as a charge value or an equivalent voltage or current value, so that the new charge generated by the radiation that enters subsequently can be doubled. On top of it. A possible example of a gathering device is an accumulating sleeping vessel or an accumulating mold grid. The charge accumulation process in an active pixel circuit 20 continues until the control signal 24 sends out a control signal, Μ initiates a process of reading out information, which is by addressing each pixel unit * The way to read the information from each individual pixel unit. During the readout of these accumulated charge values, the charge will continue to accumulate because the readout function for detecting each pixel unit can always be completed independently. The pixel circuit may be selectively reset after reading out, M releases the circuit assembly of the load, and then each pixel has no effect for a very short time (in fact, there will be no dead time as shown). Therefore, each pixel only has no effect during the reset period. Figure la points out the charge accumulation principle of an example of a pixel-based charge accumulation element according to the present invention. In this example, a field effect crystal FET (FET) is formed on a semiconductor substrate. In a P-type silicon substrate 1, N-type doped plaques 4 and 6 form the source and drain clearly, respectively. The electrodes of the source electrode 3 and the drain electrode 5 are formed in an oxide layer 2, and a gate electrode 7 is formed above the oxide layer 2. Due to the gate capacitance of the field effect crystal, the charge is concentrated on the gate 7 of a gold oxide semiconductor field effect crystal (MOSFET). When charge accumulates on the FET gate, it reduces the electron concentration in the FET inversion layer 8 (which has the few electron carriers required for FET operation). ----;-^ --- f I installed ------ * ordered ------; shout (please read the notes on the back before filling in this page) This paper standard is applicable to Chinese national standards (CNS) A4 specification (210X297 mm) 26-26 Printed by the Ministry of Economic Affairs Central Bureau of Precision Industry Beigong Consumer Cooperatives 29 ^ 9〇2 A7 B7 5. Description of the invention (23) The maximum concentration that can be gathered depends on the temperature inversion layer The minimum allowable electron density depends on. Therefore, the accumulation of this charge is not affected by any shadow from the dark current of the silicon skull «, as happened in the CCD case, because the charge will not accumulate in any depleted volume. Only the total FET gate area (which can actually be very close to the area of the pixel circuit), the thickness of the oxide layer (which can be several millimeters or tens of millimeters thin) and the dynamic range of the FET (which Determine the maximum gate voltage) to determine the accumulation capacity of the elder. It should be noted that this is only an example of a pixel-based charge accumulation element, and according to the present invention, the charge can be accumulated in any suitable charge accumulation device and implemented in the corresponding pixel circuit. The pixel pitch can be as small as 10 meters, which results in excellent position resolution M and subsequent excellent image resolution. FIG. 2 illustrates a preferred example of an active pixel circuit 20, which is used in a pixel unit of an example of an imaging device according to the present invention. This example of the present invention uses FETs, which are arranged in a grid-level amplifier circuit connected to the gate of the amplifier and the cathode of the amplifier. The VBIAS 40 is a tilt input across the depletion region to form the pixel detector 19 of the pixel unit. The pixel detector 19 is indicated by diode symbol D11. In a pixel road itself, SI GOUT 42 is an analog signal out, and VANA 44 is an analog power in. RES-R-1 is a reset shot, and ENA-R-1 is the starting round of the pixel circuit. When both RES-R-1 46 and ENA-R-1 48 are low, the charge system gathers in the gate of the crystal M11A 50. The grid capacitance substantially forms the input node capacitance (ie, entanglement capacitance), so that the charge storage capacity can be maximized. One of the objectives of the present invention is to provide the maximum charge accumulation ability, which is achieved by making all other circuits (and the detection paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1.1 — .. Binding ^ Travel (Please read the precautions on the back before filling in this page) 27 A7 B7 printed by the Beigong Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs 5. Invention Instructions (24)) The storage of components or unwanted capacitance is minimized and the substance The input charge capacitors Ml 1A 50 form all input node capacitances. For the 35-meter-by-35-meter pixel road, its Mil A 50¾ capacity can be 2 micro-drops, and the FET gate voltage dynamic range can be at least 2 volts. This storage capacity corresponds to approximately 25,000,000 electrons, and exceeds 100 times the capacity of a CCD with the same pixel size. It should be noted that in the above example, the withdrawal method of the FET device 2 actually forms all of the pixel cells. In the above example of 35-meter-by-M35-meter-meter pixels, the total storage capacity of the detector and other components and corresponding pixel detectors in each pixel circuit is in a number of Farah. The capacitance of the charge storage device should be maximized, and in any case should be substantially larger than the storage capacity in each pixel unit. In the above example, the power capacity of the FET is used as an electrical device for the pixel circuit, and it exceeds 90% of the total capacity of the pixel unit. The pixel unit includes a pixel detector and corresponding pixel circuit . The result of this is that virtually all collected «charges will be collected in the mold-collection FET * instead of being distributed between each detector and the remaining elements of the pixel road. I will find that the use of FETs can provide an example that is unique to the present invention. In this example, a pixel charge storage device (such as a FET gate or a small capacitor) can be used to maximize the accumulation of 霣 荷, and the total reaches Most of each pixel is incorporated into the node capacitance. In order to read out the pixel unit, ENA-R-1 adopts a high-energy state, and allows current to flow from the electric crystal M11A 50 to the SIGOUT 42 through the M11B 52. By changing RES-R-1 to a high energy level and resetting the pixel path *, the Chinese National Standard (CNS> A4 specification (210X 297 mm) is used at this paper scale 28 1.1 —I · —M — ^ Install n Order H — ~ -4 'line (please read the precautions on the back before filling in this page) A7 B7 printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy V. Description of invention (25) RES-R-1 After a few seconds have elapsed at the high energy level, any accumulated charge will be removed from the gate of the m-crystal M11A 50. Directly after RES-R-1 46 returns to the low energy level, the charge can begin to accumulate in the transistor Ml 1A The gate of 50. If no reset pulse is sent to the RES-R-1 46 reset input, it is found that when the WI is activated and the ENA-R-1 becomes higher energy level, a read operation will not destroy its charge, otherwise It only causes a roll proportional to the accumulated load. This allows multiple readings without resetting. FIG. 11 illustrates another example of an active pixel circuit 320, which is used for imaging according to the present invention. In the pixel unit of the device example. This example is similar to the one in Figure 2. The pixel detector is shown at PD 319 of the pixel unit. Among them, VBIAS 140 is a IE, OUT 342 is an analog signal output, RESET 346 is a reset round connected to reset FET 347, and ENABLE 348 is a start input connected to the pixel circuit start FET 352. When When ENABLE 348 is drawn at a low level and RESET 346_ is at a high level, charges (electrons) are collected in the gate of a charge storage FET 350. To read out the pixel unit, ENABLE 348 adopts a high level and allows current flow Flow from FET 350 through FET 352 to OUT 342. Make RESET low-level to reset the pixel circuit, here when RESET 346 is already in low-level and only reaches a few meters, any concentrated load will have been transferred by FET The gate of 350 is removed. Directly after RESET 346 returns to the higher order, it can be turned on immediately to accumulate charge on the gate of FET 350. If no reset pulse is sent to the reset to turn into RESET 346, it can be found that the start When the input ENABLE becomes higher, a read operation will not break the charge, on the contrary, it will only cause a «current proportional to the accumulated load. Therefore, it can be seen that the circuit of the eleventh circle is similar to the figure This paper standard is applicable to China National Standard (CNS) A4 Specification (2 丨 0X297mm) 丨 ._----- ^ --- ^ -installed ------ order ------ 1 Granville (please read the notes on the back before filling this page ) Printed at B7 by the Beigong Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs. 5. Description of the invention (26, the eleventh road in Figure 11 includes diodes 354 and 356, which are used as overload protection roads for the pixel II road design. These diodes provide electrostatic protection against FET overload and possible damage to FETs. If the FET gate 350 accumulates more than a predetermined threshold of charge (for example, corresponding to its bias voltage of 5 volts), the galvanic current will begin to flow through the dipolar wok 356 toward the ground, thus protecting the PET 350. The pixel units are created to, for example, accept all radiation agents outside the periphery of the object to be imaged. Preferably, the two FETs 350 and 352 are used as a grid-to-negative amplifier class application. In this architecture, the two FETs 350 and 3 52 provide a larger impedance transformation, but they will not increase their pitch. Therefore, the noise level from each pixel circuit described in this embodiment is only about 500e, and the pixel circuit is kept at a very small size (as small as 10-20 m pixel size), and has a great dynamic of about 50,000,000 e Fan Garden, and has the ability to access by value. Figure 11 also illustrates the possible use of the dual transistor 360. The use of the bipolar Jiao Jing carp connected to a voltage source VBASE will be described later. Fig. 10 is a schematic plaque of one embodiment of the imaging device according to the present invention. The imaging device shown in FIG. 10 includes a pixel detector substrate 214, and has an active pixel circuit formed on the second substrate 212. The second substrate is connected to the pixel detector with a buffer 222器 214. The active pixel 20-based M-FET symbol is schematically shown in the substrate 212. The pixel detector substrate 214 is provided with a continuous flip electrode 110 at the position where it is exposed to enter the radiation. In other words, in the tenth circle, the incoming radiation is assumed to arrive in the upward direction. Therefore, the main snakehead of the pixel detector substrate 112 is placed behind the continuous electrode 110. In this layer 112 ---- ^ --- J --- ^ -install ------ order ----- 1, silver (please read the notes on the back before filling in this page) Common Chinese National Standard (CNS) A4 specification (210X297mm) -30 30 A7 B7 2 ^ 39〇2 5. Description of the invention (27) There are many pixel detectors 114 on the rear surface. It is an array of the pixel detector «pole 114, and can effectively define each pixel detector unit 19 in the pixel detector substrate 214. Each pixel detector 114 is mechanically coupled to an individual pixel circuit 20 using a separate buffer 2222 and mechanically. It will find that the representative in Figure 10 is only for illustration, not to scale. In addition to the features already described above, Figure 10 also illustrates other optional features * They can isolate each pixel pixel in the manner described below.

For different detector pixel units, the corresponding mold charge storage FETs 350 may accumulate different amounts of charge, which is the result of different radiation or light intensity incident on the detector pixels. Then, a potential difference is generated between adjacent pixels. If each pixel is not electronically isolated, the early drop may cause signal charge to leak from a pixel circuit through the detector into the adjacent pixel road. The longer the aggregation time, the more serious the problem. According to a preferred argument of the present invention, by providing a mechanism for electronic isolation, or equivalently maximizing the resistance of adjacent pixel units, the effect of elimination can be eliminated or reduced. According to this, a passivation layer 116, such as poly bead amine, is coated between the detector pixel units (that is, between the II electrodes 114 defining the detector pixel unit). This can electrically isolate adjacent detector pixel cells because this passivation layer is not conductive. In addition, an electrode may be provided on the passivation layer, and the applied «KV will cause a barrier voltage 118 and penetrate a few microns inside the cross-sectional area of the detector. Therefore, the enterprise garden will escape from the load of FETs in the pixel circuit 20 and will encounter the pressure of the barrier layer, and will not be emitted into the adjacent pixel circuit PET. This paper standard is applicable to the Chinese National Standard (CNS ) Α4 specification (210Χ297mm)! 1-^ ^ Binding ^ line (please read the note on the back first and then fill in this page) Employee Consumer Cooperation Du Printing 31 A7 B7 2 ^ 39〇2 5. Description of the invention (28) Furthermore, the third option is to provide an NPN transistor (bipolar transistor) at the entrance of each pixel circuit. It is shown in Figure 11. When the base of the bipolar engraved crystal is set at an appropriate voltage and is common to all bipolar transistors of the pixel roads (approximately 1 volt), the bipolar engraved crystal will behave like a dipole It acts as a body to allow the charge to flow into the gate of the FET 350, but at the same time prevents any escape along the opposite path. In the mode, although the different potential drops can be maintained at the gate of the charge accumulation FETs 350 (which is proportional to the different signals of the accumulated charge), the entrance at the entrance of the pixel road is common to all pixel roads . Therefore, according to the concept of the present invention, a mechanism for mold-isolating pixel units can be provided in the imaging device, so that all or substantially all of the accumulated charge can be maintained on each pixel path. This preferred concept of the present invention is particularly useful when the aggregation time is quite long * For example, in the range of tens or hundreds of seconds, and when the aggregation time is in seconds or tens or hundreds of microseconds It is even more useful when it is in the middle. A pixel circuit 20 can gather a small lotus, which represents up to 60,000,000 dips on each pixel, while keeping a pixel size less than 50 times 50 meters. The pixel thickness or completely depleted pixel detectors can be up to 3 mm thick, thus making these detectors very sensitive to X-rays of less than 200 thousand subvolts. For the charged radiation, the cocoon sensitivity is actually 100%. The minimum pixel thickness can be in the order of 200 microns, which can improve the resolution when lower energy charge radiation is to be detected. The no-load layer of the semiconductor substrate that is insensitive to radiation can be as thin as 50 millimeters, so that the signal from the / 9 radiation line with an energy of less than 30 thousand volts will not be lost. CNS) A4 specification (210X297mm) ----; ----- ^, 丨 installed ------ order ------ 1 ball (please read the precautions on the back before filling this page ) Printed by the WC Industrial and Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 32 2939ο Total Α7 Β7 V. Description of the invention (29) Printed and printed by the Central Bureau of Economic Affairs of the Ministry of Economic Affairs of the Central Bureau of Economics and Technology Co., Ltd. The third nursery is a first painting control A schematic diagram of possible architectures and points out the relationship between the design of the control unit 24 and the pixel units 18 by the n-matrix active circuit 20. For ease of explanation, in the third image, only an array of 9-filled pixel units is explained, and only certain signal lines that constitute the path 22 in the first image are shown. I will find that the imaging device according to the present invention generally includes a much larger number of pixel units than shown in the third circle. The row irrigation fixed circuit 60 controls the row readout (ΕΝΑ 74> and row reset (RES 76>), and the column logic circuit 62 responds to a clock pulse signal 79 and is activated by each pixel «circuit 20 (C0L-SEL ) The readout of the accumulated charge value. The control electronics design 24 includes row selection logic 60, column address logic 62, Xiaoyuan circuit 70, ADC 56, and signal processing 58. If not all, it is best The control design 24 is located on the substrate 16 and is located around the image array formed by the pixel unit 18. The source circuit 70 is supplied to these pixels via a line 54 (shown schematically in FIG. 3) Each of the active circuits 20 on the unit 18, and can additionally be arranged to supply bias voltages to define the pixel units * via lines (not shown). The row selection logic road 60 is activated and reset through the row, respectively Lines 64 and 66 provide signals. (Also shown schematically in Figure 3), use M to select and read the pixel units 18 and the active circuit 20 respectively. The row selection 64 and row reset Line 66 is connected to ENA-R-1 48 and the start of each pixel in the row. Set the turn into RES-R-1 46. The line start logic 74 and the line reset 76 signal of the successive lines are also displayed in the line setting logic 60. It can be seen that the reset pulse 76 is followed by the After the line starts to run 74, Μ causes the active circuits to be reset after reading. ----: ----- 一 — 装 ------ 定 ------ ^ 旅 ( Please read the precautions on the back before filling out this page) This paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 33 V. Invention description (30) A7 B7 Ministry of Economic Affairs Central Bureau of Industry and Fisheries Consumption The cooperative printing the column filling logic circuit 62 effectively includes a multiplexer for drawing out the signal through the row lines 68 (also shown schematically in FIG. 3), each column line is connected The SI GOUT of each pixel circuit 20 in the column is round 42. Therefore, the COL-SEL signal 78 represented in the column selection logic circuit 62 is selected to yield each column of each active circuit 20 of the pixel unit 18, It is currently selected by the starting pulse 74 of each row. In the illustrated embodiment, during the starting period of one row, the selected pulse of this column corresponds to the clock pulse C LK 79 is sent to successive column positions, so that before the selected pulse of the row continues to be sent to the next row, the accumulated charge value of each active pixel circuit on the currently selected row is output under the pulse of each time. Just read Each active pixel circuit on the trip is then simultaneously reset with the reset pulse 76 of the row. The connection device shown in Section 3 can be easily realized using the traditional double-golden technology. Although, as shown in reference to Figure 3 In addition, each pixel is read out one after another in a predetermined order, and we will find that each pixel can actually be accessed in random access mode by independent row and column activation signals. We will also find that the scanning direction can be reversed (row to column), or in fact the individual pixels can be accessed in a completely random order by the appropriate row and column activation signals. We will also find that the degree of serial or parallel processing can be easily modified to meet the needs of each application. For example, all rows can be reset at a high starting energy level at the same time, so that the column selection timing shovel pulse will parallel out all rows, thereby increasing its readout rate. The weight of each row does not need to match its reading rate. After multiple yields, each line may be reset at a rate lower than the readout rate. We will find that the designation of each row and column can be arbitrary, and can be reversed. In order to cover an extremely large imaging surface in an effective way, please read the back of each pixel unit first. Notes on 66 3 ”The size of the bound paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 34 A7 B7 Central Ministry of Economic Affairs Printed by the Beiguan Consumer Cooperative Society 5. The description of the invention (31) It is best to synthesize m by n pixels in groups, and the image lines in each block can be successively ceded and reset in each row. . The fourth plaque is a symbol_, indicating a block of 20 pixel circuits of 2 rows by M4 columns. These pixels are gathered on the gate of each transistor MijA, where i = i, 2 and j = l, 2, 3, .4. To keep the transistors in a low position, each gate is grounded after reading. By applying a string of time shovel pulses to the CLK round 80, and a high urea collision period (like bit) to a RB-IN round 82, the reading function can be started. During the first time shovel pulse cycle, the RB-IN wheel 82 starts SW4 and connects the analog wheel output line 68 in the fourth column to the analog output ROUT 88. Therefore, when ENA-R-1 of the first row starts to turn into the high energy level, it will turn on the switch of the first row M1 * B 52 during the first value clock cycle, and the pixel will be 20 (1,4) Transistor M14A Any signal stored on the 50 pole of the «represented by the Netherlands, will flow through the« crystal and roll through two SW4 to the analog key out ROUT 90. Before the next pulse encounters the clock pulse CLK, it must fall RB-IN round. The high-energy level MCLK pulse train CLK at the round-in of the trigger U1 is sent to the input and switch SW3 of the trigger U2, and then the open relationship connects the analogous round-out line 68 of the third row ROUT 88, so that a signal current representing any charge stored on the gate of the pixel 20 (1,3) «Crystal M13A 50, will be able to meet the crystal and flow through the SW3 to the analog fiber ROUT 90. Because SW4 is now at a low (lower) energy level, it will not connect to the analogous round-out line 68 in the fourth column. Therefore, the bit shifting system should be moved through the switches SW4-SW1 and Meifa Kailan U1-U4. This is because the paper standard of the wok is applicable to the Chinese National Standard (CNS) M specifications (210X297 mm) 35 — H — | I ^ ^ — Gutter (please read the precautions on the back before filling in this page) A7 B7 printed by Beigong Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economic Affairs V. Invention description (32) Pulse CLK connected thin clock Caused by the pulse. This column activates trigger switches U1-U4 to form a first tilt shift register. When the read bit is sent out of the trigger switch U4 as a clock pulse, it can be sent back to the trigger switch U1 in a clock mode. It is also clocked in when the clock mode is sent to the line start logic circuit U5-U7 and the line reset button circuit U9-Ul 1. Each time they receive a momentary urea input from the output of the trigger switch U4, they will advance a read bit and a reset bit, respectively, and the reset bit moves at a step behind the read bit. This row activates the trigger switches U5-U7 of the series a circuit to form the second shift register, and the row reset trigger switches U9-U11 form the third shift register. In this way, each time a line is read, the read bit is shifted up by one line. In the same way, the reset bit is now also moved up one line, but it is one line behind the read bit. When the reset bit of the last trigger switch U11 is read, it can be supplied to the RBO output 84 of the read bit, and a new praise cycle can be started. The time between successive reading operations should be short enough, M keeps the gates of each micro crystal Mi j Α to have a very small potential difference, preferably the potential difference is 2 volts lower than the reset position (or the zero-point charge level) . In another preferred embodiment of the present invention, the same function shown in Section 4 · can be implemented by a counter that generates row and column addresses and can be decoded into the same control signal as in Figure 3 , Such as COL-SEL 78, RES 76 and ΕΝΑ 74 ° The storage capacity of each crystal Mij Α depends on the capacitance and pressure on the crystal lattice of the crystal. These 難 晶 睡 Mi jA can tolerate 10 volts, but what they want is to keep the grid voltage lower than this, and up to about 2 from the reset potential. This paper standard uses the Chinese National Standard (CNS ) A4 size (210X297mm) 36 ^ ^ Binding ^ Brigade (please read the notes on the back before filling this page)

Printed by the Male Workers' Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of Invention (33). For pixel sizes less than 50 meters removed by M 50 metre, the gate volume can be up to about 5 to remove the farad. "Yi" means that 6X 1〇τ but 1¾ son can be stored. This is about 86 times the capacity of a CCD, and the CCD stores the charge in the storage potential well in the substrate. In order to understand the advantages presented by the imaging device according to the present invention, a single imaging device with a size of 2 cm by M2 cm can be considered. If the pixel size is 35 metric meters by 35 metric meters, the imaging plane includes 571 rows by 571 columns of pixels. According to this, if the imaging device is an ASID, all 326,041 pixels can be read out every 32 seconds with a frequency multiplier clock rate of 10 million Hz. Therefore, in the example of creating only one readout channel, a frame will be displayed every 32 seconds to present real-time imaging. Because these pixel circuits have the ability to store tens of millions of yuans, an ASID can actually solve the highest intensity applications that will be seen in the future. This is not at the expense of the spatial resolution of the M image (in this example, the pixel size is 35 meters) and the no-load and inert imaging time. In fact, the pixels of each line can be reset immediately after reading, as long as the reading effect of the next line continues (the reading cycle has been explained in the previous paragraph). The time for reading out this line is 100 milliseconds times the number of pixels in each line, which is 57.1 seconds. Subsequently, when the display time of the video frame exceeding 32 milliseconds, the inert time is only 57 seconds or 0.17 percent, which is actually no-load time. Therefore, an ASID device can achieve high spatial resolution, real-time imaging with 32 millisecond image frame updates, extremely high dynamic range, practically no dead time, extremely low noise, and other than that In the specific example, only one channel is read out, which is a cost-effective way. Also use 箸 to directly enter and exit each pixel «way, which stores a measurement image frame In — ^ — in an AS ID; Use China National Standard Falcon (CNS) A4 specification (210X297mm) -37-37

Printed by the Ministry of Economic Affairs of the Central Bureau of Industry and Fisheries Cooperative Society $ L A7 B7 V. Description of the invention (34) It is filled with oranges. This is the use of each pixel base stored in each aggregated image frame and deducted by it Minus it. In a real-time imaging application, this measurement time can be completed in every few seconds or less, because it can keep these bases (consumer pulse level) and the extremely low noise platform in ASID set . The eighth plaque is another exemplary circuit of an active circuit 20, which is used in the pixel unit 18 according to an embodiment of the present invention. The pixel detector 19 is represented by a bipolar pus symbol 182 connected to the bias voltage VbUs 180 (the detector may also be used as a sniper), and the bias voltage is applied through an electrode (not shown) to define the The pixel unit 18 is depleted by the volume or pixel detector 19. The charge generated by the radiation line entering the depletion region of the pixel unit 18 is shot into the base of the first input transistor 184 (in this case, the effective crystal FET has, for example, 0.3 milliohm (ms) ) Transconductance coefficient, and a 100-ampere drain-source current value I and 0.1 retreat farad's envy). The source and drain of the input FET 184 are connected between the first «current source 186 (here a properly designed FET, although this may be replaced with a resistor) and a ground line GND 174. The current source 186 is sequentially connected to a positive power source line V + 172. The junction between the key-in FET 184 and the current source 186 is connected to one end of the second crystal 188 to form a common base bipolar amplifier, which is controlled by the bias applied to its base. The base of the second transistor 188 is connected to the bias line Vd 178. The remaining terminals of the second transistor are connected to the base of the input PET 184 via a feedback capacitor Cf 190 (for example, with a capacitance of 0.3 microfarad). This paper uses the Chinese National Standard (CNS) A4 (210X297mm) ----:-: --- II (please read the precautions on the back before filling in this page) Order 38 A7 B7 ^ 93902 5. Description of the invention (35) The junction between the second transistor 188 and the Cf 190 is also connected to the second current source of the negative-electrode line V-176 (here it is a properly designed FET, Although it may be replaced with a resistor). Therefore, the charge generated from the volume of the depletion region of the pixel unit entering the radiation line can be collected at the capacitor Cf 190. The X and Y readout circuits, that is, Xread 160 and Yread 164 are connected to the readout logic circuit 198 (here is a double base FET), which is sequentially connected to the negative power supply line V-176 and a round switch 196 ( Here is a FET), so that when a signal is simultaneously supplied on the Xread and Yread lines 160, 164, the accumulated charge on the capacitor Cf 190 can be drawn out through a drawing line 156_. The X and Y reset lines, Xread 162 and Yread 168 are connected to the discharge series "Road 100 (here is a pair of base FETs), which are sequentially connected to the negative power source line V-176 and a release power Between the switch 192 (here is a FET 192), use M to release the signal, and here, when a signal is simultaneously supplied on the Xread and Yread lines 162, 168, the device Cf 190 can be reset. It shows that the circuit forms a charge sensitive amplifier, which has a charge storage capability in the counter residual container Cf 190, and has an output and reset circuit design. Depending on the storage time of the load and the radiation hardness requirements, these FETs can be supplemented with appropriate techniques such as junction field effect transistors (J-FETs) or MOSFETs. If the container Cf 190 has a capacity of 0.3 microfarads, it corresponds to a storage capacity of about 1.8 million electrons. If the Cf 190 has a picofarad capacity of 1 picofarad, this corresponds to a storage capacity of about 6 million electrons. In the round-robin circuit, the maximum output clock frequency with a reset FET This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 OX29? Mm) | ^ Pack H-J line (please read M first (Notes on the back and then fill out this page) Printed by the Ministry of Economic Affairs, Central Bureau of Industry and Fisheries Co-operative Cooperative A7 B7 Printed by the Ministry of Economic Affairs, Central Bureau of Industry and Customs Co., Ltd., Beigong Consumer Cooperative V. The description of invention (36) is 5 to 10 million Hz. If there is no reset FET in the output circuit, the maximum detection frequency is reduced by about 200 kHz. The circuit design shown in FIG. 8 can be implemented on a pixel unit having a size of about 150 by M 150 microns, for example. In applications such as 7-photography and angiography, the pixel size need not be less than about 150 cm wide. In this case, the extra space on each pixel road can be used for operations other than charge accumulation, draining, and resetting Μ. For example, the configuration in Figure 8 can amplify the accumulated charge value. In addition, the configuration of Figure 8 can be modified before the concentrated charge is concentrated on the pixel circuit to provide charge discrimination into the impact of radiation. In the ruined mode, incoming radiation corresponding to a lower-than-expected energy can be excluded before converging on the pixel road. Around the outside of the imaging area formed by the imaging unit arrays, some or all of the control circuit designs 24 may also split into a complete part of the semiconducting base wafer 16. Fig. 9A shows a more detailed control circuit design 24 and its relationship with the active pixel pattern 20 on the substrate 16 shown in the eighth garden. For ease of explanation, only an array of 16 pixel units is shown in the 9A picture, and only certain signal lines constituting the path 22 shown in the first figure are shown. We will find that an imaging device according to the present invention will generally include a pixel unit 18 far exceeding the number shown in No. 9A_. The control circuit design 24 includes an X-address logic circuit 144, a Y-address logic circuit 146, a power supply circuit 150, and a signal processing circuit 148. If not all, it is preferable that certain control circuits 24 are provided on the substrate, and Around the pixels of the array, these pixel circuits are also provided on the substrate. «The source circuit 150 provides a source of power to each paper size via line 170 (schematically shown in Figure 9A). Applicable to the Chinese National Standard Rate (CNS) M specifications (210X297 mm) 40 ---- ··-^ ---- Installed ------ Ordered ------ f (Please read the precautions on the back before filling in this page) A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy V. Invention Instructions ( 37) 20 pixel paths 20, and can be additionally arranged, M supplies the bias voltage to the electrodes defining the detector of the pixel unit via lines (not shown). The X and Y addressing logic paths 144 and 146 pass the row and column lines respectively 152 and 154 provide signals (schematically shown in circle 9) and use M to control and reset each pixel road 20. The signal processing circuit 148 schematically shown in FIG. 9A is connected to the wheel of the active circuit 20 Out line 156. In the embodiment of FIG. 9A, each row of pixel paths 20 is provided with an output line, and is connected to the signal processing circuit 148 through a round-out amplifier 158. However, I will find that another option is Provided for each column, or row group or column group or pixel unit / circuit group Independent wheel-out circuit. Figure 9B illustrates the signal circuits in more detail. They are provided between the control circuit 24 and a pixel circuit 20, and are used in the pixel unit 18 according to an embodiment of the present invention. The power circuit 170 includes A positive electrode source line V + 72, a grounding line GRD 174, a negative electrode source line V-176 and an amplified image source line Vq 178. The row line 152 includes an Xread line 160 and an Xreset line 162, and the column line 154 It includes a Yread line 164 and a Yreset line 168. As already explained, each row in this embodiment is provided with an outgoing line. The pixel roads shown in Figures 2, 8, and 11 and the third, fourth, and fourth lines The connection devices shown in 9A and 9B can be formed on a single half of the hip guide wafer by conventional JJY manufacturing technology, or on two overlapping semiconductor substrates, so that an array of pixel detectors is placed first On a block substrate, and an array of pixel circuits are located on a second substrate that is mechanically connected to the first substrate. The mechanical connection is, for example, a collision-bonding method, and each pixel detector and its corresponding pixel circuit A pair Correspondence of this paper. The size of this paper uses the Chinese National Falcon (CNS) M specifications (210X297mm) 41 ---- 7-^ --- f -{Line (please read the precautions on the back before filling out this page) 02 A7 B7 V. The printed description of inventions by the staff consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (38) (please read the precautions on the back before filling out this page) In a typical embodiment of the present invention for mammography, each square includes 80 by 240 pixels. Mammography may be between this imaging 24 and one pixel® 20, with some of the most stringent requirements in terms of readout speed and stored energy. For successful mammography, each pixel «records 10,000 X-rays at 20 thousand electron volts in 1 second. At each pixel circuit with a storage capacity of 6 × 107 pixels, this means that each pixel can gather more than 10,000 X-rays, which means before the content of the pixel needs to be read out. Therefore, each pixel can read 10 times more per second or less, which is equal to a pixel readout rate of 10 Hz. In each 80-line block with 240 pixels, the available clock rate divided by M 19200 defines the readout time of the entire block, which refers to all pixels in the block. For a clock rate of 10 million Hertz, Zeng is a typical clock rate, and the entire block can be read at a rate of 520 Hertz. Since mammography requires only 10 Hz, it can be seen that embodiments of the present invention can handle up to 50 times more intensity than that required by mammography. As explained shortly, the redundant part can now have the ability to modulate the round out points of many squares (tiles) together, and minimize the number of all read channels. One of the arguments of this device's lotus work is its no-load time, which can be defined as the time it takes to reset each row after it has been ridiculed. A row of pixels can be reset in 10 seconds or less. During this period each pixel is inert. Since 10 times or less of readout and weight operations can be performed in 1 second (逋 is a typical speed of mammography), 逭 means that the total no-load time is 0.0001 seconds or 0.01% compared to the total time The total time refers to the time when the imaging device must be effective. Therefore, the no-load time of the embodiments of the present invention is 42. The size of the paper adopts the Chinese National Standard (CNS) Α4 specification (210 × 297 mm). The A7 Β7 is printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy. V. Invention Description (39) It matters, and is so good that there is no dead time. In order to understand how much this dead time is, I found that the number of X-rays lost during this period (assuming that each pixel receives 10,000 X-rays per second) is 10000X 0.0001 (about 1 X-ray per pixel). This is much smaller than the total fluctuation limit (100> *) and this limit is the statistical error of 10,000 X-rays. According to this, this embodiment of the present invention is the maximum performance operation that can be obtained in conjunction with the statistics. The example of the pixel circuit shown in Figure 2 or 11 can be made to have a main size of less than 35 cm, so that the pixel units may be 35 square meters or less. Each block diagram has a multiplier of 4 mm With a size of 12 mm, and can be made from one of hundreds of tile surfaces, the imaging surface area is 18 cm by M 24 cm, for example, each tile surface corresponds to a square of 115 by M341 pixels, for example. The use of the tiled surface method to produce a large imaging surface has the advantage of high productivity. It also provides the advantage of grouping, so that if a tile surface fails, it is possible to replace only the tile surface without replacing the entire image The surface can be used to manufacture large imaging arrays economically and inexpensively. Surprisingly, it is still possible to obtain good imaging quality using the tiled surface method, even if such tile surfaces include m by η-value pixel unit squares And associated The design of the road and the design of the control road. Each tile surface will require at least 4 values, possibly 5 to 10 outer contacts. Each tile surface also includes the m by n pixel units at the edge of the active color image area Array, which has some inert invalid space to place the control and logic path of the tile surface. In a preferred embodiment of the present invention, each tile surface is therefore placed on a photosensitive screen as shown in circle 5 The size of the paper is applicable to the Chinese National Standard (CNS) Α4 specification (210X297mm) 43 (please read the precautions on the back and then fill out this page)-installed. Printed by the Ministry of Economic Affairs Central Equatorial Bureau Zhengong Consumer Cooperative Α7 Β7 5. Description of the invention (40) In order to be used in mammography, a detection plane should be 30 centimeters times 30 centimeters. No empty space is allowed in the detection plane. For the fifth figure The device shown reaches the point * The photosensitive screen surface is moved in two steps, so that the entire surface to be imaged can be completely covered by gathering three image frames. The shape of the tile surface can be substantially rectangular. The optimal length of a tile detection (or effective) area is It is equal to twice the long side of the total empty space. However, due to the estimated accuracy of the tile surface alignment of 50 to 100 microns, and the requirement that some parts of the effective area of the reverse surface weigh II, the size of the tile surface It may not correspond to these optimal sizes. For the application of mammography *, the example of the Qiguangzhen surface may include 621 tiles, and each tile has 41,760 35-meter-by-H 35-meter-reduced pixel unit. The mechanical arrangement of the traditionally accurate and fast enough to achieve the movement of the image sensitive screen surface. Figure 5 shows that each tile surface has provided enough space for its electronic design Optimizing the arrangement shown in Figure 5, M makes the full-surface image to be generated have 3 images, and these three-value images are gathered before, between, and after the two 12 mm pitches, respectively. However, we will find that other embodiments may utilize configurations other than those shown in Figure 5, and the technology disclosed here can be used in any application that gathers 100% images. Figure 5A illustrates the local control electronic design of an embodiment of the present invention, which includes a tiled photosensitive screen surface, such as that shown in the fifth garden. The basic control electronics design (eg T2) on each reverse side roughly corresponds to that shown in Picture 3. However, not every tile surface is provided with an ADC 56 (as shown in Figure 3). From the majority of the tile surface (such as Τ1-Τ10), the paper standard uses the Chinese National Standard (CNS) A4 specification (210Χ297 %) 44 ^; j--binding I — ί line (please read the notes on the back before filling this page)

5. Description of the invention (41) A7 B7 The printing of the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is connected to a common ADC 561 via a main frequency multiplier MM (eg operating at a urea rate of 10 to 100 million hertz), And thus connected to the signal processing logic circuit, display, etc. 58. The main frequency multiplier MM need not be placed on the tile surface itself, but can be placed near it. These ADCs 561 are also not located on each tile surface, but are preferably located nearby. One of the advantages of using the main frequency multiplier is that it reduces the number of ADCs required, thereby reducing the overall cost of the imaging system. As another alternative in Figure 5A, each tile surface can be connected like a daisy garland and can be found on a single common ADC. The high-resolution ADCs constitute an expensive part of the whole system. The reduction in the number of them can have a significant impact on the overall cost «. In applications such as mammography, traditional X-rays, chest X-rays, etc., it can include one of the millions of tile surfaces, and a minimum of about 9 ADCs (that is, only 9 rounds) Output channel) in order to provide the desired readout performance, even for high-intensity applications. The design of the road according to the present invention enables each tile surface to be read out in a controlled manner, so that the tile surface can be read out multiple times in turn to gather an image. This is not possible with some devices, such as a CCD device. Multiple readings of these tiles can improve the comparison in the following ways. As an example, there is an example in which 5000 X-rays are shot on a detector pixel. If the storage capacity of the pixel can handle all 5000 X-rays, it may decide to set the readout rate, M corresponds to the time allocation of receiving the 5000 X-rays, so that the analog charge value of all 5000 X-rays can be stored in One pixel, and then read out all the accumulated charge value. If every 4.88 X-rays use an ADC of 10 × 10 (also 5000 X-rays except M 1024 gray scale), it will correspond to a different gray scale. However, if a faster reading rate is used, for example, the paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ2.97mm). 45 I Packed—IIII Ordered——III Line--Gas One (please read first Note on the back and then fill out this page) The Ministry of Economic Affairs, Central Bureau of Standards and Technology, Beigong Consumer Cooperative Printed Oxygen A7 _B7_ V. Description of Invention (42) If the time allocation corresponding to receiving 1000 X-rays and the use of the same ADC, each has The corresponding gray-scale layering of 1000 X-rays divided by M 1024 equals 0.97. From a general example, it can be seen that only grayscale resolution can be increased by only reading at a higher rate. The technique described directly above and reference to Figure 5A * can be optimized between cost (more octave, less ADCs) and image comparison (less octave, more ADCs). FIGS. 6A to 6C illustrate the structure of an example of a tile surface in more detail. The tile surface has a layered structure, including a hybrid support plate 210, a silicon readout chip 212, and a pixel detector layer 214. The chip 212 is a Mounted on the support board, and the layer 214 is made of, for example, cadmium zinc telluride, cadmium telluride, mercury iodide, gallium arsenide, sulfide, silicon or thallium bromide, and is connected to the readout chip by collision . FIG. 6A is a plan view of the pixel detector layer 214. In this example, it has an effective surface area 216 of 19.985 mm by K 19.98 5 mm. What surrounds the effective surface area of the pixel detector layer is an inert zone, which includes a detector guard ring 218. Fig. 6B is a plan view of the detector layer mounted on the praise wafer 212 and the support plate 210. We will find that as with the detector guard ring 218, the inactive area surrounds the effective detector area, and also includes the edge of the readout chip 212 and the hybrid support layer 210, M and the required between the tile surfaces space. The wire bond 220 on the support layer or board 210 allows the yielding chip to be force-connected to the design of the circuit on the board 210, and is thus connected to the color image processing via a main rear plane. The 6th coil is one of the tile cross-sectional coils, which indicates that the detector layer 214 is connected to the readout chip at each pixel position with a collision bond 222. The paper size of this support board is applicable to China National Standard (CNS) Α4 specification (210Χ297mm)

In J. I I " * binding {line (please read the precautions on the back before filling in this page) A7 _____B7__ printed by the Ministry of Economic Affairs, Central Bureau of Industry and Commerce, Beigong Consumer Cooperatives 5. Instruction for U3) There is an array of pins 224, using Position and connect the tile surface on a major back plane. Figures 7A to 7D illustrate another option, which provides the transfer of a single detection plane as described with reference to the fifth plaque, for example in autoradiography, where the surface to be imaged can emit radiation instead of the same external light source. Examination * An example of autoradiography, on which an isotope is recorded (eg, nitrate 14, phosphorus 32, phosphorus 35, sulfur 32, iodine 125, hydrogen 3, etc.), and it is located as close as possible to a Image detector (for example-imaging plane) as shown in Figure 7A. Usually the sample is placed on a thin polyester resin layer about 1.5 meters thick to avoid contamination. If the sample is placed on the imaging plane, it is impossible for the imaging plane described in Figure 5 to move. However, since the invalid plaque loops are flexing the effective area of the tile surface, as shown in Figure 7A, the effective imaging area of the surface layer of the Qi Guangzhen installation will only cover 85 percent of the total surface area. Figure 7Α illustrates some dimensions of an example of a tiled photosensitive screen surface. As outlined in circles 7B and 7C, one solution to this problem is to provide a sandwich layer so that the two imaging planes DPI and DP2 are located above and below the sample OS, respectively. The second americium imaging plane should be as close as possible to the first imaging plane, with the sample in between, with the two imaging planes parallel to each other and slightly displaced relative to each other. The position accuracy can be as good as 1 to 2 meters. Figure 7D shows the empty or inert space in each effective imaging interval of the equipment shown in Figures 7B and 7C. The white dots represent inert areas. Cross-hatched plaques indicate where these effective areas overlap, while the remaining hatched plaques indicate that only one effective plaque overlaps one of the samples. In the specific example shown * and as discerned in the 7D country, only 1.2% of the total area is an inert zone, and 68.9% is a two-imaging plane. The paper scale applies the Chinese National Standard (CNS) A4 specification ( 210X297mm) -47-----; ---- ^ ---- installed ------ ordered ------ J line (please read the precautions on the back before filling this page) A7 B7 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs V. Description of Invention (44) Imaging (so the efficiency can be increased when the radiation is detected on the second side of the sample), and 29.9% is imaged with only one plane. The 1.2% inert zone can still be lifted up to cover the upper plane, for example, and it can be slightly displaced diagonally. In autoradiography, ideally the box should be as large as 42 cm by M39 cm. With a tile surface size as described above and a pixel of 35 cu. Meters by Μ 35 ft., 98.8% of the total area can cover 578 tile surfaces. If the tile surfaces are modulated together as described elsewhere in this article, they may only require 40-bit ADCs or less. Using these techniques, a new image may be generated and displayed every 3 seconds. This application of the present invention can actually give a sample of 4π coverage, while increasing the overall efficiency, real-time imaging, spatial resolution of 35 meters and a dynamic range of 6 magnitude. Therefore, this alternative arrangement is suitable for applications where the object to be imaged includes a radiation source, and provides first and second detection planes that are arranged substantially parallel to each other. The two planes use a desire placed in between Radiation sources of imaging objects are separated from each other. By arranging the tile surfaces of each imaging plane to be offset with respect to the broadcast side, it may substantially obtain an image of the entire value of an object, where the radiation from the object is also substantially towards the two planes. Imaging devices of other architectures can be used in different applications. For example, for the application of computer X-ray tomography, each imaging device is substantially tangentially lined around the periphery of a chaff or part of a ring to surround or partially surround an object to be imaged a part. The imaging devices may also be arranged substantially tangentially around the circumference of most rings or partial cutouts, and in the direction formed by the common axis of these loops or partial loops Applicable to China National Standard (CNS) A4 specification (210X297mm) 48 ---- ^ ---; --- f < installed ------ ordered ------ {line (please read first (Notes on the back and then fill in this page) A7 B7 ^ Sd〇2 V. Description of the invention (45) Displacement, in order to image most parts of the object. In other applications such as non-destructive testing and real-time monitoring, the imaging devices may be laid together like a tile surface to form a photosensitive screen surface that matches the area and shape of the object to be imaged, and / or to form a surround The photosensitive surface of part or all of the imaged object is mounted on the screen surface. If the pixel units are not arranged in a large rectangular array, in other embodiments of the present invention, the imaging device may be designed as a slit, and the pixel units are arranged in a single row, or as a groove, and the The pixels are arranged side by side in the series. A slit or groove can be used in many applications, such as body radiography scans, panoramic tooth imaging, safety profiling, and so on. The use of grooves can also be used as an alternative to full-area scanning, which has the advantage of lower cost due to its lower imaging surface. In a case where one slit or groove has one or two rows of pixels, the pixels may be located on the same semiconductor substrate on the side of the corresponding pixel detector, rather than on the same or different semiconductor substrates. Behind the pixel detector. Several slit-type (or groove-type) tile surfaces can be placed end to end, and M forms a long continuous slit (or groove). Each tile surface of the adjacent column can be displaced in the direction of the column, so that there will be no inert area corresponding to the inert space between the tile surfaces during scanning. This is shown in Figure 5. By positioning the control electronics design on the side of each pixel unit formed by each pixel detector and pixel road, these pixel units can actually extend directly to the end of each slot (or groove) tile surface. In this way, a very long continuous slit (or groove) can be made in a very cheap way. Referring back to the first circle, the control design 24 includes the processing and control road design described in reference to Figures 3 and 4, which is connected to the semiconductor basic paper standard and is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 Mm) -49----- Γ-^ --- f I installed ------ ordered ------ f line (please read the precautions on the back before filling this page) Ministry of Economic Affairs Printed A7 B7 by the Employee's Consumer Cooperative of the Central Bureau of Precinct V. Printed invention description (46) of the Pongong Consumer Cooperative of the Central Provincial Bureau of the Ministry of Economic Affairs (46) Each pixel unit 18 on the film, as outlined by the two-way arrow 22. The control electronic design 24 can address (for example, scan) the active corners 20 connecting each pixel unit 18, and use M to read out the concentrated charges in the active corners 20 at each tilted pixel unit 18. The read charge is sent to ADCs for digitalization and data reduction processors (hereinafter referred to as DRPs) to process the two-bit signal. The processing performed by DRPs may include authentication signals that cannot satisfy certain conditions, such as a minimum energy level. This is particularly useful when each praise signal corresponds to a single incident into the radiation. If the energy corresponding to the measured signal is less than expected from the radiation used, it can be concluded that the reduced storage charge is due to scattering effects. In this case, the measurement can be released, and this can ultimately improve the resolution of the image. For another option where the pixel width is greater than 100 m, the identification function can be implemented on each pixel path as described previously. In this case, the impact of low-energy children has been ruled out, and the rest are gathered on each pixel circuit. The control electronics design is additionally transferred to an image processor 28 via a path, which is schematically indicated by arrow 26. The image processor 28 includes a data storage device in which the digital value representing the charge read from each pixel unit and the position of the corresponding pixel unit 18 can be stored. For each pixel unit 18, each value charged from the pixel unit is accumulated to the charge value that has been stored for the pixel unit, so that a value can be accumulated. As a result, each image can be stored as a representation of a two-dimensional pixel array, and they can be stored in a data file, for example. The image processor 28 can access the image data stored in the material library. The paper standard applies to the Chinese National Standard (CNS) Α4 specification (210X297mm) ----; --Μ --- f-装- ----- Subscribe ------ ί line (please read the precautions on the back before filling in this page) 50 A7 B7 Central Government Bureau of Economic Affairs Employee consumption cooperation du printed five, invention description (47, to Miao chooses a known color image (all arrays) or a part of the color image (a copy of the color image array). The image processor 28 can read out the values stored in each S fixed pixel position, and through the tendons The path outlined in 30 creates a H image of the data to be displayed on a wish display 32. Of course, the data can be printed out, not, or cannot be printed except _, and further processing operations can be added. . Normally the background and noise can be subtracted from each pixel of the charge value. If the obtained color image is taken before-"empty" color image, it may be possible to deactivate the anti-pulse «level and / or background. For each «Pixels, a background value can be subtracted and deducted accordingly. The operation of the pixel processor 28 will be described in more detail below. According to one imaging technology of the present invention, it uses an imaging device according to the present invention, and has a slit or groove that can be freely accessed to effectively move the pixel unit. With the Japanese technology, the slit or groove It is possible to move around the erbium with a certain speed V, and read it in the time unit of tt-t. In the example shown on the twelfth circle, there is no 6-value image cord in a narrow winding, and each pixel has a size of ( x, y). A certain direction of movement is in the direction of the dimension X. If a read operation occurs at time U, in accordance with the argument of the present invention, the slit should be allowed to move until a time I and then read again The distance moved or broadcasted during the period UU is dx, and in this movement direction «not more than half the fi pixel size (also dx is less than or equal to x / 2 >. 逭 technology can improve the resolution along its movement curve , And compared with the full-scale imaging or Fu Tongben paper scale, the Chinese national standard (CNS) A4 specification (210X297 mm) is applied ----; --- ^ --- j * installed ------ order --- --- f ball (please read the precautions on the back before filling this page) 51 2 ^ S9〇2 A7 B7 V. Invention (48 slit (groove) technology is improved by twice. The reason for the improvement is that it uses multiple sampling chess styles, and according to this, if the slit (groove) frame is gathered in a short enough interval (The scanning distance must be less than the half-tilt pixel size), the structure below it will sense a resolution equal to the pixel size * instead of twice the pixel size. A global imaging plane or a slit (groove) The effective resolution is twice the size of the pixel, where the slit is not operated according to the argument of the invention. The above technique can be used for panoramic imaging of teeth, for example. The playback speed is usually 4 meters per second, And the width of the groove is 4 mm, and the length is 8 mm. It can be converted into 80X 1600 pixels, each pixel size is 50 meters. The gathering of the whole image should last about 10 seconds. According to this embodiment of the present invention, the indentation should be read at least every 25 meters. The reading rate of the indentation is 1.6 thousand. If you use a block of 80 columns by 20 rows of pixels and a clock frequency of 5 million Hertz, the readout speed of the block is 5X 10β (20X 80) = 3.1 thousand guns HI; the threshold is greater than the required one thousand guns ·; (-Binding " 1. ^ (please read the notes on the back before filling in this page) Printed by the Ministry of Economic Affairs, Central Bureau of Industry and Commerce Beigong Consumer Cooperative. When using this slit (groove) technology, X The ray source »is set in a high-level operation" Flow, or if possible, the X-rays should be gathered from a global area into the size of the slit (groove). It is necessary to keep the color image gathering time constant. In many cases, it may be technically difficult and expensive. Another option for the single slit (groove) technology is the multi-slot (groove) technology. According to the variation of the species, the multiple slits The slits (grooves) are placed on a plane and parallel to each other, and the vertical paper size of each slit (groove) is applicable to China National Standard (CNS) Α4 specification (210 X 297 mm) 52 Central Ministry of Economic Affairs Sample quasi-bureau employee consumer cooperation du printing 2 ^ 39〇2 a? Β7 V. Invention description (49) Axis There are certain distances. In the Japanese way, if there are η slits (concave eaves) and the total broadcast distance is X cm, then each narrow winding (groove) only needs to scan Χ / η cm. The box requires fewer mechanisms, but more importantly, the intensity of the X-ray light source only increases by X / (η X slit or groove width>. Now, various methods of operation in conjunction with the imaging device and system of the present invention will be described As mentioned above, the device and system of the present invention are intended to provide high-intensity imaging, and the radiation is intended to be directly incident on each imaging device. In the embodiments of the present invention, the radiation is impinged on the M concentration Charge (by directly storing the charge value or equivalent pressure or current), and the charge value is completely linearly related to the junction energy of the incoming radiation, not by counting the number of points or the number of events As a result, an ASID can gather the weights of individual crystals and / or «containers (or other devices on the pixel road), which describes each pixel, the road and each pixel. Most of the detectors are in turn, and the ASID is used for all The pixel unit has direct one-to-one access. The two main special sticks have a dramatic attack on their performance. One 々510 can gather up to about 2 times as much as one ^ 0 .- ^ 510 also provides clear imaging, and has an inert time of less than 1%. Its electronic noise level is only about several hundred 㑩. Compared with Fu Tong ’s pulse counting type semiconducting pus pixel detector, an ASID is in its There are no restrictions on the intensity of the roll (and / or light). Long color image gathering time (up to 1 second if required) and a very dynamic range will allow real-time imaging of the intensity * without saturation . This paper scale is applicable to China National Atomic Rate (CNS) A4 specification (210X297mm) — —. M ^ u ^ * Binding I 1. ^ (please read the notes on the back before filling in this page) 53 Central Ministry of Economy Printed by the quasi-bureau Zhengong Consumer Cooperative Association Α7 Β7 V. Description of the invention (50) As mentioned above with reference to the first circle, there is a color image processor 28 after the ADCs, which can store the position along the relevant pixel unit 18 The read out value of each pixel unit represents the digital value of the lotus. For each pixel unit 18 of value, each load value read from the pixel unit is accumulated to the stored charge value of the pixel unit, so that a single charge value can be aggregated. As a result, each color image can be stored as a list of two-dimensional pixel values. Such image data can be stored in a database, for example, and become a two-dimensional array of the color image: image (1: Npixeis, 1: 3) where the first tilt parameter includes items, which represent the image plane Number of pixels. This parameter refers to the number of pixels linearly shifted from 1 to the maximum, and the second parameter includes three values, which are the X and Y blocks and the "charge value" collected by each pixel. For each tilt image, a background / blanking pulse «flat array can be suppressed. For example, just before the color image is aggregated into a calibration image, its background / blanking pulse balance can be aggregated. The calibration method is specific to each pixel, and is not the normal state of all pixels. The image processor 28 accesses the stored color image data in the library, M selects a known image (integer array) into a part of the color image (a sub-sample of the color image array), and Create a round image of the data to be displayed, printed or further processed. Before displaying, printing or further processing the image data, the color paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ297mm) ^ I (-• binding ^. ^. (Please read the note on the back Please fill in this page for details)-54 Printed A7 B7 by the Beigong Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs 5. Description of the invention (51) The processor 28 should preferably be able to find the two images stored in these potted pixels. Value, and specify some of these values as the second extreme value of the grayscale or chroma, and can be used to exclusively display, print or further process the color image. According to the position of the heavy load on the pixel, the rest The m charge value of the pixel position can be specified as an intermediate gray value or color value between these two extreme values. For example, the gray value can be assigned to the small sky charge value of each town pixel according to the following equation: («荷 i -Minimum "Lotus" Gray value of pixel i = Minerey + -X (Maximum gray-minimum grayscale> (Minimum grayscale> (Maximum «charge-minimum gray scale> By the traditional user turn-in device 36 , Through the data path outlined by tendons 34, you can complete a part of the image you want to enlarge It is possible that the display may function with the display 32 schematically represented by the double arrow 38. The user input device 36 may include, for example, a keyboard, a mouse, etc. The present invention can be used for each active A unit of image cable aggregates «charge and results in several benefits. The accumulation of charge in the active path on each pixel unit * then selectively corresponds to the two systems with one-to-one pixel units and can be accessed by each value Active «The ability to read out the stored charge in the middle of the road can completely solve the problem of any unclear incidence of the incident incident of the rays at the same time entering the yoke. Because the charge can gather on each of the main roads for a period of super encounter, its reading The output speed is not too high * For these results, it may be possible to generate and process color images in real time based on, for example, M soft cockroaches, and in fact, it can be cheaply realized on the easy-to-use hard brain. Use Chinese National Standard (CNS) Α4 specification (210X 297mm) ----.---: --- f 'installed ------ ordered ------ ί ice (please read first (Notes on the back and then fill out this book) Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ---- i 'invention (52) For each part of the captured image, the contrast and resolution can be automatically adjusted and displayed on a full screen. No matter when, «the image plaque captured by the imaging device is loaded between each pixel unit When the density changes, and the part of the captured color image is displayed, the appearance of the color image can be clarified. It is assumed that the 16 loads from the active 16-way load storage device of the image cable unit have been read out, and If the storage capacity of the «load storage device is repeatedly reset before the exhausted storage device is exhausted, its dynamic range is valid and unrestricted. It only selects the active" reset rate "of each path. , Also read and reset the frequency of those «paths, M is suitable for the storage capacity of these charge storage devices and the expected maximum radiation density. Therefore, as more radiation sources produce more «charges, the active« in the road * stored in each purple-like unit will then be read out at appropriate intervals and digitized with the control 霣 路 design. After digits, the «charge has a known value, but can be aggregated with the existing digital« charge value of the same pixel. The only practical limitation is the maximum number of digits that the process can survive. However, the process design can be arranged to detect a value that is close to the maximum possible value that can be stored, and then apply a scaling factor to the stored value of all pixel units. The invention can take time-consuming imaging. Once a color image array has been generated, the image array can be continuously updated with the new digitized «charge value from the imaging device even before the illumination is started. These" charge values are then added to the existing energetic value of each pixel of the array , And the time display shows the accumulated load value. At the location where a continuous mine is used to update the image array, Yuen can provide a copy of the Ennao storage paper. The paper is suitable for the Chinese National Standard (CNS) A4 specification (210X 297mm)

Inn · —— _ | * Pack n I order (please read the precautions on the back and then fill in this page) 56 A7 B7 The Ministry of Economic Affairs Central Escalation Bureau male workers' consumption cooperation du printing 5. The invention description (W) is valid Use, because the detected radiation will not produce more image points, which is like some previous techniques, but the replacement is that each pixel unit position with M can generate a higher charge value. In other words, the present invention enables the concentration of radiation measurements rather than the average increase in the number of radiation impact points. An ASID can also be used to provide real-time imaging, where a new color image frame can be displayed every predetermined time period. The emotional time between frames of each image is actually zero, so real-time imaging can provide maximum efficiency, and there is no need to extra use in the complexity of the number of readout channels or pixel paths. The present invention provides a method to minimize the radiation diffusion effect before entering the imaging device. When an imaging device is used in the above manner, the diffused rays will result in a lower concentration charge, which refers to the situation where the rays are directly incident. This is because the diffused rays will register less energy in the depletion region of the pixel detector. Therefore, when dealing with the collected charge, the diffused radiation has a much lower effect on the total charge than the direct radiation. When displaying an aggregated image, by assigning an appropriate grayscale or color value to a lower value, it may minimize the effects of diffuse radiation. For applications where the required radiation intensity is less than the maximum achievable readout speed per pixel (in the range of thousands of hertz), the present invention provides a method including radiation diffusion effect before entering the imaging device. If this method is not included, the image will be reduced Clarity. The method that can reach this point will now be explained. The charge generated by each photon or charged radiation particle is first stored in the active circuit of each pixel unit, and then read out. The control electronics design can digitize the charge, and the DRP can compare the digitized value with a gate valve reference value. The reference value corresponds to the expected load from the incoming radiation pattern, for example it is a ----:-^ --- f -installed ------ order ----- 1 line (Please read the precautions on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 (210X297mm) 57-57 Printed by the Central Consortium Bureau of the Ministry of Economic Affairs Beigong Consumer Cooperatives 2〇S9. 2 A7 B7 V. Description of the invention (54) X-rays of known wavelengths or charged® radiation from a known energy. For further consideration, if the digitized charge value is less than the reference value, it is excluded. The item identification operation can eliminate the scattered rays under the test. When a non-adaptive scattering effect occurs before the imaging plane, and the radiation is, for example, traversing an object to be observed, the scattered radiation will lose some cantilever before the imaging plane, resulting in a pixel unit Less depletion is generated in the depletion region. These effects are Compton scattering of photons and ion scattering of entrapped particles. On the other hand, the diffused rays can be excluded at any incident intensity, provided that this is done on each pixel before the charge is accumulated. Applications such as 7-photography and real-time angiography imaging require pixels with a width of 100 cm or more, and there is enough space on the pixel circuit to implement gate threshold cut-off. Before entering the imaging device, there is an example of a method to eliminate the radiation diffusion effect. Whether it is coherent or non-citrus dry, a groove technique and an aiming radiation source can be used so that it can radiate various rays. The rays are aimed at the imaging cavity. The distance between the source and the object under observation, the distance between the object and the imaging recess and the width of the groove can be optimized. These parameters can be used to define its geometry and minimize the detection of diffused rays. This is because the diffused rays "see" a small phase space, and there is no reason to enter the thin imaging cavity. This method is powerful because it is based on geometry and does not need to know the energy of the incoming rays. If the rays have diffused, they will most likely avoid detection, regardless of whether they have diffused dry and lost some of their energy (Compton Scattering), or coherently scattered and this paper scale is applicable to Chinese national standards (CNS) Α4 specification (210X 297mm) cft I ---: --- ^ --- 1 -installation ------ order ------ first line (please read the note on the back first # ' Item and then fill out this page) A7 B7 printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs V. Description of the invention (55) Keep all its settings (Rayleigh scattering). Figure 13 illustrates the undiffused radiation ratio against the slit (groove) by way of example, which is the width of the slit (groove) of four different photon energy sources, and the slit (groove) and the observed A function of 4 different distances between objects. For the Japanese example, it is assumed that water is an object that causes scattering over 10 cm in thickness. Assume that the semiconductor is silicon. It can be seen from these four curves that in fact the groove width between 1 mm and 4 mm can exclude all scattering (100% vertical axis). This result is almost independent of the distance between the coffin and the object (β in the squint surface). If the width of the groove begins to be greater than 1 to 4 mm, then the result is determined based on / 3. Therefore, for a known object that can be placed under consideration, the optimal groove width and the distance between the groove and the object / 3 can be determined, so that almost all scattered rays will be excluded, so the image solution is greatly improved Clarity and contrast. This method can exclude coherent diffused rays, but other methods cannot, because they have the same energy as undiffused rays. The optimized imaging device design according to the present invention can be realized in a predetermined automated manner. The semiconductor substrate selected for each material or composition has a different response to incoming radiation, and this response depends on the physical characteristics, radiation pattern, and radiation energy of the material or composition. At each step, the center of gravity method is applied to the registered electronic signal * and the radiation line entering at this time is across the semiconducting substrate. This determines the best resolution available, and is a function of one of the above parameters. Therefore, the pixel size can be determined. By choosing the pixel size correctly, you can maximize the signal-to-band ratio (because a pixel contains most of the signal), and at the same time make the cost and post-device complexity of this paper standard applicable to the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm) ^ ^ I installed II line ^ (please read the precautions on the back before filling in this page) A7 B7 printed by the Ministry of Economic Affairs Central Counseling Bureau Cooperative Labor Co., Ltd. 5. Description of invention (56) Minimize. These results and the expected delta sensitivity can be stored in a data frame and can be used to define the design parameters of the imaging plane of the imaging device, that is, its pixel size and substrate thickness. Another option is to provide a series of imaging planes that are compatible with a common control unit and a color image processor. An end user can then rely on it before implementing imaging! Enter a desired delta sensitivity into the image processor * to cause the processor to automatically select an imaging plane with the correct specifications. As an example, Kaolian uses silicon as the semiconductor substrate material. In biotechnological applications, isotopes such as hydrogen 3, sulfur 35, phosphorus 32, phosphorus 33, sodium 14 and iodine 125 are used. These isotopes emit / 9 radiation. For example, Kaolian Sulfur 35, which emits 170 thousand electrons of waiting radiation. Section 14 indicates many channels through which these three rays pass through the silicon crystal H. If the method of gravity is applied, it can be found that the resolution is no better than 32 meters. The pixel size can then be selected so that it is greater than 32 meters, and M contains most of the electronic signals. The above / 3 radiation isotope system is used in most biotechnology applications. In mammography, tomography, nuclear linguistics, dental imaging, safety systems, and product quality control, X-rays use energy between 10 to 180 volts, and telluride Cadmium zinc, cadmium telluride and mercury iodide are all suitable materials for semiconductors. There are many biological applications where radiation imaging is performed. The most common is the use of one of the following isotopes: hydrogen 3 (18 thousand volts), Shuo 14 (155 thousand volts), sulfur 35 (170 thousand volts), phosphorus 32 (250 thousand volts) , Phosphorus 32 (1700 thousand electron volts). The precise requirements for some applications can be summarized as follows: This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 publication) 60 I ^ ^ * Binding ^ order nf ball (please read the precautions on the back before filling this page) A7 B7 Du Printed by the Central Ministry of Economic Affairs of the Ministry of Economic Affairs. 5. Description of the invention (57-Ideally for in-situ miscellaneous needs 10 meters of space;-Miscellaneous and isolated or integrated proteins on DNA and RNA, ideally on the box It requires more than 300 metre-removing space;-DNA tandem ideally requires 100 metre-removal. An imaging device according to the present invention can meet the above requirements. In addition to excellent efficiency (actually 100%), according to the present invention The imaging device can reduce the time of broadcasting results from days or months to hours. Since the imaging is done in real time, a biologist can see the results when they gather. It can be explained by software and statistical analysis methods These results. In mammography, the X-rays used usually have an energy from 10 volts to 30 volts. The X-ray source is placed behind the object to be observed, and the object can be absorbed Part of the X-rays, and let the rest of the X-rays pass through. The X-rays that resist the imaging plane then absorb their photons and generate an electrical signal from the determined point of incidence. Their charge density distribution can effectively define the color image, and The traditional on-line processing device can be colored, magnified and analyzed for maximum image contrast and resolution. For each 0.5 to 1 mm thick active cadmium zinc telluride, cadmium telluride or mercury iodide, the efficiency of each pixel It is almost 100%, and can greatly reduce the required dose, the resolution of mammography can be better than 30 cm, and it can display the organic structure of this size. In nuclear B diagnosis, one is 150 thousand yuan Isotopes that emit X-rays in the volt range (such as Tc 99 with a half-life of 6 hours) are injected into the human body and concentrated in certain areas to be imaged. The radiation is emitted isotropically and surrounds the body collimator filter , Μ catches the unwanted direction, so a point is projected to different planes. According to an example of the present invention, -------: --- ^. 装 ------ 定 ----- -^ Line (please read the notes on the back first (Fill in this page) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 61-61 ^ 〇S9〇2 A7 B7 printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs 5. Description of the invention (58) This AS ID, made of, for example, cadmium zinc telluride, cadmium telluride, mercury iodide, indium difluoride, aluminum sulfide, gallium arsenide, or silicon, can be placed in front of and around the human brain replacing the current imaging planes. In the dental imaging operation, X-rays with an energy of 40 to 100 thousand electron volts are applied, and the box requires an imaging area of about 15 to 25 square centimeters. Therefore, the above-mentioned panoramic imaging of teeth using the slit / groove technique will constitute the present invention. A better application. Suitable semiconductors are as described above. However, another possible application of the present invention is non-destructive engineering verification and product quality control. Depending on the inorganic object being observed, a different X-ray energy can be selected to optimize the resolution and efficiency with high contrast. X-ray energy can be used in the range of 20 to 180 thousand volts * ° The image of a product or a structure is automatically compared to the ideal image of the same product or structure, and various degrees of severity may occur differently and refute To its production line. The AS ID and the above methods can be found in a wide range of applications, including X-rays, chest X-rays, mammography, X-ray tomography, computed tomography, spatial brain tomography, X-ray bone densitometry, 7-ray nuclear radiography, 7 radiography, single-photon radiographic tomography (SPECT), cation radiography (PET), X-ray dental imaging, X-ray panoramic dental imaging 、 Use isotopes for DNA, RNA and protein tandem, in situ hybridization, DNA, RNA hybridization and protein isolation or integration; 8-ray imaging, and general / 9-ray imaging, use chromatography and polymer chain The self-bending radiography of the reaction, X-ray and 7-ray imaging in product quality control, non-destructive testing, and real-time and linear paper scale are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) — 1 ' -Binding f &-(please read the precautions on the back before filling in this page) 62 A7 B7 5. Description of the invention (59) Real-time (lotus) imaging of monitoring, safety control rules and the use of radiation lines. Found will be placed on the cell size and the number of pixels on a single semiconductor detector, with a specific system will depend upon the semiconductor technology may be purulent plaques product. Therefore, although the "specific examples of known dimensions and component values" the present invention is not limited thereto, and is intended to include changes in those dimensions and values, these changes refer to the current technology and future technology may be implemented by those who implement. It should also be noted that the active circuits shown in *, such as the pixel circuits 20, 3, 4 and 9 shown in Figures 2, 8 and 11, are designed to connect the lines and control roads as possible. Circuit examples, and there may be many modifications and additions within the scope of the present invention. Although Le has here described in detail exemplary embodiments of the present invention with reference to the attached drawings, it should be noted that the present invention is not limited to those specific * embodiments, and a person skilled in the art will be able to implement Various changes and improvements will not deviate from the scope and spirit of the present invention, as defined by the scope of the attached patent application. ; 111 ^-Binding I ^ line (please read the precautions on the back before filling this page) Printed by the Ministry of Economic Affairs, Central Standards Bureau, Negative Consumer Cooperative 63 This paper scale is applicable to the Chinese National Standard (CNS) 84 specifications (210X 297 2) Printed 2939〇2 A7 B7 by Employee Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 5. Description of the invention (60) Components «Comparative 1,214,212 .... Silicon substrate 42,342 .... Analog signal round out 2 ... Oxidation Object layer 44 .. Analogue source M input 3... Source input 46,346 .... reset M1 input 4.6 ... .N-type doped plaque 48.348 .... start M input 5 ---- drain曰 50 .... 難 晶 黼 渷 极 7 ---- Grid 雰 52 .... Φ 晶 龌 8… Inverse Pan "54 ____ Line 10 ---- Imaging System 56,561 .... Analog Digital Conversion Device 12 ____ Material Brew 58 ____ Signal Processing 14-Thousand Rays 60 ____ Xing Yi Ding Logic 16 16-Active-Like-Semiconductor 62 62 __ Column Addressing Logic 61 ____ Start Line 18 · Pixel unit 66____ Reset line 19,319,214,112 ... Pixel detection 68 ____ Column line device (dipole) 70 ____ 霣 源 霣 路 20 — Active pixel circuit 74 .... Line read ΕΝΑ 22 ____ Path 76 ____ Line reset RES 24____ Control "Sub-design 78____ Column irrigation signal 28____ Color image processor 79____ Time shovel pulse signal 30 ____ Arrow 80 ____ When the carp rushes into the wheel 32____ the display 82 ____ reads the bit into the fiber 40,140.180... · Body pressure _ into 84 ____ reads out the bit _ out ----.-- J --- ^ 'installed --- --- Subscribe ------ 1 '4 (Please read the precautions on the back before filling in this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) 64 V. Description of invention (61 ) A7 B7 90,88... .. analog round-out 192 ____ discharge switch 100 ____ discharge logic road 196 ____ round-out switch 110 ---- continuous electrode 198 ____ praise logic circuit 114 ____ detector electrode 210 ____ hybrid Support plate 116 ____ Passivation layer 212 ---- Silicon readout chip 156 ____ Sap out line 214 ____ Pixel detector layer 160 ... · X readout line 216 ____ Effective area 162 .... X reset line 218 ____ Guard ring 164 ____ Y readout line 220 ____ Wire bonding 168 ... · Y reset line 222 ____ Withdraw buffer 172 ____ Positive power line 222 ____ Collision junction 174 ____ Ground line 224 ____ Pin 176 ____ Negative power line 347 ____ Reset FET 178 ____ Bias line 350 ____ Charge storage FET 184,188 .... input transistor 352 ____ Starting FET 186 _ Current source 354,356,182 ____ Diode 190 ____ Feedback capacitor 360 ··· .. bipolar transistor}; ^ · Binding (please read the precautions on the back before filling in this page) Employee consumption of the Central Standards Bureau of the Ministry of Economic Affairs The paper size of the printed version of the cooperative is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 X 297 mm) 65

Claims (1)

Α8 Β8 C8 D8 Printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy VI. Application for Patent Scope No. 84112672 Application for Amendment of Patent Scope 85.7.6. 1. An imaging device for imaging high-energy radiation, the imaging device includes A pixel unit array provided with a semiconductor substrate, the base M contains a pixel detector array and a corresponding pixel circuit array, the detectors can generate charges in response to incoming radiation; each pixel circuit is connected to a Each pixel detector * is used to accumulate the electric energy generated by the radiation incident on the pixel detector. These pixel circuits can be pseudo-addressable * and include a charge accumulation circuit, a reading circuit and a reset circuit: Wherein the charge accumulation circuit includes a charge storage mechanism for accumulating charge caused by radiation incident on the pixel detector, the reading circuit is used to interpret the charge accumulated by the charge storage mechanism, and the reset circuit is pseudo Used to reset the charge storage mechanism; its standby is that each pixel circuit is configured to provide a capacitor and enough to store 1.8 million electricity The charge storage mechanism of the dynamic range of the sub is to accumulate the charges that are generated by multiple consecutive high-energy radiation lines on the respective pixel detectors before being interpreted or reset. 2. The imaging device according to item 1 of the patent application, in which the capacitance of all input nodes of each pixel circuit exceeds 0.1 retreat farad • preferably more than 0.3 microfarad. 3. The imaging device according to item 2 of the patent application, wherein each pixel circuit includes a charge storage device to accumulate charge, and the capacitance of the charge storage device substantially forms the input node capacitance of the pixel circuit and the pixel unit. 4. The imaging device according to item 2 of the scope of patent application • Each pixel-66 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) m tm ^^^ 1 1 ~ ~ ι ϋ --- t --- Go κ I ^^^ 1 ^^^ 1 ml 14 — ^ n — ^ n mi .., i 0 i ^ platinum (please read the precautions on the back before filling out this page) A8 B8 C8 D8 printed by the Employee Consumer Cooperative. 6. The scope of patent application includes at least two transistors. The first transistor is used as a charge storage device "and the second transistor is used as a readout switch *. It responds to a moving signal in order to connect the first transistor to an output line for outputting any accumulated electricity. 5. The imaging device I according to item 2 of the scope of patent application wherein each pixel circuit includes at least two transistors with a grid-to-negative amplification stage. 6. The imaging device according to item 4 of the patent application scope, in which the transistors are field effect transistors. 7. The imaging device according to item 6 of the patent application scope, in which the PET capacitor of the first transistor forms the input node capacitance of the pixel circuit and the pixel unit. 8. The imaging device according to item 4 of the patent application, where each pixel circuit includes another tilt field effect transistor. It can respond to a reset signal * to reset the charge storage device. 9. The imaging device according to item 2 of the patent application, wherein the pixel circuit includes an overload protection circuit design, preferably a diode, for overvoltage or loss of voltage protection. 10. The imaging device according to item 1 of the patent application scope includes a power impedance mechanism for electrically isolating each pixel unit. 11. The imaging device according to item 10 of the patent application scope, wherein the power impedance mechanism includes a non-conductive passive quasi layer disposed between adjacent pixel detectors 0 12. The imaging device according to item 11 of the patent application scope> ; Where a potential is applied to the passivation layer * so that the paper standard is in accordance with the Chinese National Standard (CNS) 84 specifications (210X297 public daughter) within the semiconductor base Η under the passivation layer ------- 1 ! I installed ------? Τ ----- f · line (please read the precautions on the back before filling this page): ... 8 888 XBCD Printed by Beigong Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs Sixth, the patent application scope generates a potential barrier, which is used to further electrically isolate each pixel unit. 13. The imaging device according to item 10 of the patent application range, wherein the power impedance mechanism includes a diode that forms part of the pixel circuit. 14. The imaging device according to item 10 of the patent application range, wherein the power impedance mechanism includes a bipolar transistor that forms part of the pixel circuit. 15. According to the imaging device of claim 14, the base of the bipolar transistor of each pixel circuit is set to a common potential. 16. According to the imaging device of claim 1, the charge value accumulated in a pixel circuit is output by a pixel circuit, which is regarded as a current value. 17. The imaging device according to item 1 of the scope of the patent application, in which the size of the pixel unit is 1 mm wide or less, preferably about 350 cm wide. 18. The imaging device according to item 1 of the patent application, wherein the size of the pixel unit is about 150 microns wide or less, preferably about 50 meters wide or less, and most preferably about 10 meters wide . 19. The imaging device according to item 1 of the patent application scope, wherein the thickness of the base H is between 200 cm and 3 mm. 20. The imaging device according to item 1 of the patent application scope, in which the pixel circuits are pseudo-integrated with the substrate and flush with the corresponding pixel detectors. : 21. The imaging device according to item 1 of the scope of the patent application * wherein the pixel circuit is made in another substrate, the other substrate is incorporated into the pixel circuits, and is coupled to the pixel detection器 的 基 Η · Each -68-This paper scale is applicable to the Chinese National Standard (CNS) 8 4 «! / Grid (210Χ297mm) --------- ί 丨 装 ------ Order ----- One line (please read the precautions on the back before filling in this page) 29S9〇2 as B8 C8 D8 printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy Corresponding pixel detector alignment and coupling. 22. The imaging device according to item 1 of the patent application, wherein the array includes a single row of pixel detectors and associated pixel circuits to form a slit-type imaging device, or includes multiple rows of pixel detectors and associated pixels Circuit to form a groove-type imaging device. 23. The imaging device according to item 22 of the patent application scope, wherein the pixel circuit of each pixel detector is laterally adjacent to the corresponding pixel detector. 24. The imaging device according to any one of claims 1 to 23, wherein each pixel circuit can accumulate charge for an order period of 1 second before reading out. 25. An imaging device according to item 1 of the patent application, which includes a control electronic design containing addressing logic circuits for addressing each pixel circuit and reading out the accumulated electricity from these pixel circuits Value, and selectively reset the pixel circuits. 26. The imaging device according to item 25 of the patent application scope, wherein the addressing logic circuit includes a mechanism for connecting the output circuit of the pixel circuit to the output point of the imaging device · for supplying a read start signal to the pixel circuits A mechanism for starting input and a mechanism for supplying a reset signal to each pixel circuit reset input. 27. The imaging device according to item 26 of the patent application scope *. The mechanism for connecting each output line includes a shift register or a counter for successively connecting the pixel circuit output lines of each column of pixels to the output of the imaging device. 28. The imaging device according to item 26 of the patent application scope, which is used to supply -69-This paper size is applicable to the Chinese National Standard (CNS) Α4 specification (2Ι0Χ297mm) I PJ—install n order | line (please read first (Notes on the back and then fill out this page) Printed by the Employees' Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs ^ 3902 A8 B8 C8 D8 6. The scope of applying for patents The organization that reads the start signal includes a shift register or counter for successive supply of reading The start signal is sent to the pixel circuit of each row of pixels to read the start input. 29. The imaging device according to item 27 of the patent application scope, wherein the mechanism for supplying the reset signal includes a shift register or a counter, so that the reset signal can be successively supplied to the pixel circuit reset input of each row of pixels. 30. The imaging device according to item 25 of the patent application scope, wherein the control electronic design includes an analog-to-digital converter for converting the analog charge value into a digital charge value by the pixel circuit. 31. The imaging device according to item 25 of the patent application scope, in which at least part of the control electronics design is integrated into a semiconductor substrate, and the pixel circuits are integrated on it. 32. The imaging device according to item 1 of the patent application scope, wherein the semiconductor substrate is made of a material selected from the group consisting of: cadmium zinc telluride, cadmium telluride, mercury iodide, antimony arsenide, arsenide Gallium, germanium, thallium bromide and silicon. 33. An imaging system, including an imaging device according to item 30 of the patent application scope, the imaging system includes an image processor connected to the control electronics design for processing digital charge values from each pixel circuit, In order to form an image on a display device for display. 34. According to the imaging system of claim 33, where the processor can determine the maximum and minimum charge values of each pixel to be displayed, assign extreme gray or color values to these maximum and minimum charge values, and according to The slider between the two extreme values assigns grayscale or color values to another pixel, and this depends on the charge value of the pixel. -70-This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm) n 1 ^ 1 n ^ · 1 ^ — · HM I ^^^ 1 nn n ^ — ^^^ 1 In-^-^ nn > ^^^ 1 ^^^ 1 ml ^ (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 2 ^ S9〇2 6.Applicable patent scope 35. The imaging system of claim 34 of the patent scope, in which the gray scale or color value is pseudo-distributed according to the following formula: '(charge i-minimum charge) gray scale value of pixel i = minimum gray scale + ---- (maximum power Μ ~ minimum charge) / two X (maximum gray scale-minimum y \: into 36.-a variety of imaging systems, including a number of imaging devices in the first patent range, these imaging devices are laid like tiles Together to form a photosensitive mosaic screen 37. According to the imaging system of the 36th item of the patent application range, the photosensitive mosaic screen includes a plurality of rows of tile imaging devices, and the imaging devices of adjacent rows are located in this 38. The imaging system according to item 36 of the patent application scope, including the imaging device for stepping or shifting And / or the mechanism of the object to be imaged. In order to accumulate an image over an entire image area. 3 9. The imaging system according to item 36 of the patent application scope includes two imaging surfaces, each surface including each imaging device A photosensitive inlay screen surface, the two imaging surfaces are substantially parallel to each other, and are separated from each other by an object to be imaged placed between the two surfaces, the photosensitive inlay screen surfaces are laterally offset relative to each other In order to give the object a complete imaging. 40.-An imaging system, including a number of imaging devices according to item 1 of the patent application scope, where these imaging devices are essentially around a ring or part The circumference of the ring is arranged tangentially to surround or partially wrap -71- -------- 1 -installed ------ order ----- < line (please read the precautions on the back before filling in this page) A8 B8 C8 D8 ^ 08902 VI. Scope of patent application Part of the object to be imaged. 41. The imaging system according to item 40 of the patent application scope, in which the imaging devices are actually arranged tangentially around the periphery of most rings or part of rings> Each ring is composed of Equal rings or partial rings are separated from each other in the direction of the common axis. 42. A type of imaging system, including a plurality of imaging devices according to item 1 of the patent application scope, these imaging devices are laid like a tile surface to form a photosensitive embedding that matches the area and shape of the object to be imaged Mounting surface 0 43.-A variety of imaging systems, including multiple imaging devices according to item 1 of the patent application. These imaging devices are laid together like tiles to form a surrounding part or all of the object to be imaged. The photosensitive inlaid screen surface. 44. According to the imaging system of claim 36, each image output of most tile imaging devices is connected to a common frequency multiplier, and the output of the frequency multiplier is connected to a common analog digital converter. 45. According to the imaging system of patent application scope item 36, the image output of most tile surface imaging devices is connected like a daisy wreath to a common analog digital converter. 46. The imaging system according to item 44 of the patent application scope, wherein the output of the frequency multiplier includes a current value representing the charge accumulated from the pixel circuits. 47. The imaging system according to item 33 of the patent application scope, in which each pixel circuit is addressed to read out the accumulated charge at a rate to optimize the conversion of the accumulated charge value into a digital value Analogy-72-This paper scale is applicable to the Chinese National Standard (CNS) A4g (210X297mm) ^ _ binding line (please read the notes on the back before filling this page) Printed 2939 by the Employees Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 2 A8 B8 C8 D8 Sixth, patent resolution resolution of digital converter. 48. According to the imaging principle of item 33 of the patent application scope, most of the image frames can be accumulated in an analog-to-digital conversion stage or subsequently in an image processing stage. 49. According to the imaging principle of item 33 of the patent application scope, arrange each image frame to accumulate in the imaging units to re-read the supplementary images to be displayed and reset the pixel circuits at a sufficient rate • Avoid saturation of the charge storage devices of these pixel circuits. 50. An imaging system, including one or more slit or groove type imaging devices according to item 22 of the patent application, and relative movement between the slit or groove image forming device and the object to be imaged The mechanism, the direction of the movement is transverse to a longitudinal axis of the imaging devices, for accumulating a complete image above an imaging area. 51. The imaging device according to item 1 of the scope of the patent application, in which the pixel circuit is configured to provide a capacitor and sufficient to be interpreted or reset before storing 6 million electrons, preferably 25 million A charge storage mechanism with a dynamic range of 50 million values and more preferably 60 million values of electrons. 52. The imaging device according to item 1 of the patent application, wherein each pixel circuit includes a discharge mechanism, and when the corresponding energy of an incoming radiation is lower than a predetermined value, the discharge mechanism discharges before the pixel circuit accumulates. 53.-A method for the accumulated value of imaging * The accumulated value is accumulated at each pixel position of an imaging device as defined in item 1 of the scope of patent application, the method includes: -73-This paper scale Applicable to the Chinese National Standard (CNS) A4 specification (210X297 gong)-binding | line (please read the precautions on the back before filling this page) Printed by the Ministry of Economy Central Standards Bureau employee consumer cooperative 8 888 • ABCD ^ 93902 VI. Application The scope of the patent determines the maximum and minimum accumulation values of the pixels in an area of the pixel array to be imaged; at the extreme value of grayscale or chromaticity to be imaged, the grayscale or color value is assigned to these maximum and The minimum accumulation value; for each pixel that is proportionally adjusted according to the two extreme values, assign a grayscale or color value to the accumulation value; and image the specified grayscale or color value at each image pixel position. 54.—A method for implementing real-time imaging of an organic or inorganic substance, the method including: • irradiating the object with a radiation source capable of generating X-rays, 7 rays, / 3 rays, or α rays; Item 1 of the imaging device emits absorbed radiation at the semiconductor imaging plane or radiation emitted from a selected area of the object, whereby the amount of charge incident on each pixel detector of the imaging device from the radiation line ore can be Accumulate in each pixel circuit; address these pixel circuits separately to read out the accumulated charge; process the readout charge to provide image pixel data; and display the image pixel data. 55. A method of operating an imaging device according to item 1 of the scope of the patent application, the method comprising: reading the accumulated electricity from each pixel circuit at a rate to optimize the resolution of an analog-to-digital converter , The converter is used to use the Chinese National Standard (CNS) Α4 specification (210X 297 mm) for this paper standard -------- f —installation ------ order ----- { Line (please read the precautions on the back before filling in this page) Printed by the Consumer Cooperative of the Ministry of Economic Affairs Central Bureau of Accreditation 203902 A8 B8 C8 D8 Central Bureau of Standards of the Ministry of Economic Affairs β: Printed by the Industrial and Consumer Cooperative A The electrical acne value is converted to a digital value. 56. The imaging device according to any one of items 1 to 23 or 25 to 32 or 51 or 52 of the patent application, which is pseudo used for traditional X-ray, chest X-ray, X-ray mammography, X-ray tomography Surgery, computed tomography, space computed tomography, X-ray bone densitometry, X-ray dental imaging, X-ray panoramic dental imaging, use of isotopes in DNA, RNA and protein sequence, in situ hybridization, DNA, RNA Isolation or integration of miscellaneous and protein / 5-ray imaging, general / 3-ray imaging, autoradiography using chromatography and polymer bonding reaction, X-ray and 7-ray imaging in product quality control, non-destructive Sex testing and real-time and online monitoring, security control system, and lotus dynamic imaging. 57. The imaging device according to item 24 of the patent application, which is pseudo-used in traditional X-ray, chest X-ray, X-ray mammography, X-ray tomography, computer tomography, space computer tomography, X Ray bone densitometry, X-ray dental imaging, X-ray dental panoramic imaging, / 3-ray imaging using isotopes in DNA, RN A and protein sequence, in situ hybridization, DNA, RNA hybridization and protein isolation or integration , General / 3-ray imaging, autoradiography using chromatography and polymer bonding reaction, X-ray and 7-ray imaging in product quality control, non-destructive testing and real-time and online monitoring, safety control System, and lotus imaging 58. According to the imaging system of any one of the patent application items 33 to 50, it is pseudo used for traditional X-ray, chest X-ray, X-ray mammography, X-ray tomography , Computer tomography, space computer tomography -75-This paper scale is applicable to China National Standard (CNS) Α4 specification (210 X 297 mm) --------- 1 Packing ------ order ------ ί 』(Please read the back first (Notes to fill out this page) Α8 Β8 C8 D8 々, patent application phase technique, X-ray bone densitometry, X-ray dental imaging, X-ray dental panoramic imaging, use of isotopes in DM A, RNA and protein sequence, original Ground heterozygosity, DNA hybridization and RNA isolation and protein isolation or integration of radiographic imaging, general / 3-ray imaging, autoradiography using chromatography and polymer bonding reaction, X in product quality control X-ray and 7-ray imaging, non-destructive testing and real-time and online monitoring, security control system, and motion imaging. 59. The imaging device according to item 1 of the scope of the patent application, which is used for red ray imaging, visible light imaging and ultraviolet imaging. --------- A—— (Please read the precautions on the back before filling in this page) Order ----- \ Printed by the Ministry of Economic Affairs, Central Bureau of Economic and Social Affairs Monthly Consumer Cooperatives 76 This paper size is applicable China National Standards (CNS) A4 specification (210X297mm)