TW290715B - Fabrication method of lateral bipolar transistor on silicon-on-insulator(SOI) - Google Patents

Abstract

A fabrication method of lateral bipolar transistor on SOI with base width controlled by grown spacer comprises of: (1) with SOI with buried oxide and separation by implanted oxygen(SIMOX) as initial material; (2) with ion implantation forming well region; (3) growing one thick field oxide(FOX) as isolation; (4) growing one oxide as gate oxide; (5) with chemical deposition growing and doping polysilicon, and etching with photomask to form gate of MOS element; (6) with ion implantation forming base region of BJT; (7) with photoresist overlaying one first side of BJT element, and with high-density ion implanting forming collector on one second side of BJT element; (8) on two lateral sides of gate growing one spacer and by etching back achieving needed spacer thickness; (9) with high-density ion implanting to form one emitter on BJT element; and (10) with photoresist overlaying BJT, then performing high-density ion implantation, simultaneously forming drain and source of MOS element and base of BJT element.