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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A plasma etching end-point detection method of IC contact and via holecomprises of the following steps: 1. performing circuit layout design of IC chip, which designs dummy contact hole or dummy via hole on scribed lines except semiconductor wafer chip area, in which the above dummy contact hole or dummy via hole has no electricity, and whose size is far larger than contact hole or via hole of chip area; 2. performing IC process, by lithography and etching technology etching dielectric on semiconductor wafer, forming contact hole or via hole on IC chip, in the same time forming dummy contact hole or dummy via hole on scribed lines between chips.
TW85101749A1996-02-121996-02-12End-point detection technology of contact and via hole
TW285759B
(en)