TW284908B - - Google Patents

Info

Publication number
TW284908B
TW284908B TW082100635A TW82100635A TW284908B TW 284908 B TW284908 B TW 284908B TW 082100635 A TW082100635 A TW 082100635A TW 82100635 A TW82100635 A TW 82100635A TW 284908 B TW284908 B TW 284908B
Authority
TW
Taiwan
Application number
TW082100635A
Other languages
Chinese (zh)
Original Assignee
Tokyo Electron Sagami Kk
Mitsubishi Electric Machine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Sagami Kk, Mitsubishi Electric Machine filed Critical Tokyo Electron Sagami Kk
Application granted granted Critical
Publication of TW284908B publication Critical patent/TW284908B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • H10P32/12
    • H10P32/171

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
TW082100635A 1992-01-31 1993-02-01 TW284908B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4040747A JPH05217929A (ja) 1992-01-31 1992-01-31 酸化拡散処理装置

Publications (1)

Publication Number Publication Date
TW284908B true TW284908B (OSRAM) 1996-09-01

Family

ID=12589230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082100635A TW284908B (OSRAM) 1992-01-31 1993-02-01

Country Status (4)

Country Link
US (1) US5330352A (OSRAM)
JP (1) JPH05217929A (OSRAM)
KR (1) KR100228254B1 (OSRAM)
TW (1) TW284908B (OSRAM)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
EP0603391B1 (en) * 1992-05-15 1997-07-23 Shin-Etsu Quartz Products Co., Ltd. Vertical heat treatment apparatus and heat insulating material
US5445521A (en) * 1993-05-31 1995-08-29 Tokyo Electron Kabushiki Kaisha Heat treating method and device
US5417803A (en) * 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
KR0161417B1 (ko) * 1995-07-11 1999-02-01 김광호 가스흐름이 개선된 종형확산로
JP3471144B2 (ja) * 1995-09-06 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置及びその断熱構造体並びに遮熱板
US5605454A (en) * 1995-10-12 1997-02-25 Vlsi Technology, Inc. Four port tube to extend the life of quartz tubes used for the well drive process
FR2747402B1 (fr) * 1996-04-15 1998-05-22 Sgs Thomson Microelectronics Four a diffusion
DE19626355A1 (de) * 1996-06-18 1998-01-15 Joern Rohde Golfschlägerschaft
DE29611438U1 (de) * 1996-06-18 1996-09-05 Rohde, Jörn, 10707 Berlin Golfschlägerschaft
JP3270730B2 (ja) * 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP3644880B2 (ja) * 2000-06-20 2005-05-11 東京エレクトロン株式会社 縦型熱処理装置
JP4633269B2 (ja) * 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US7128570B2 (en) * 2004-01-21 2006-10-31 Asm International N.V. Method and apparatus for purging seals in a thermal reactor
JP4508893B2 (ja) * 2004-02-02 2010-07-21 エーエスエム インターナショナル エヌ.ヴェー. 半導体処理方法、半導体処理システム及び反応チャンバにガスを供給する方法
US7351057B2 (en) * 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
WO2008016143A1 (fr) * 2006-08-04 2008-02-07 Hitachi Kokusai Electric Inc. Appareil de traitement de substrat et procédé de fabrication d'un dispositif semi-conducteur
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
US10208380B2 (en) * 2015-12-04 2019-02-19 Applied Materials, Inc. Advanced coating method and materials to prevent HDP-CVD chamber arcing
US10490431B2 (en) * 2017-03-10 2019-11-26 Yield Engineering Systems, Inc. Combination vacuum and over-pressure process chamber and methods related thereto
TW202321510A (zh) * 2021-09-21 2023-06-01 荷蘭商Asm Ip私人控股有限公司 反應器系統及其清潔方法
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815144B2 (ja) * 1986-04-18 1996-02-14 株式会社日立製作所 縦型処理装置
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
KR0147044B1 (ko) * 1990-01-23 1998-11-02 카자마 젠쥬 배기 시스템을 가지는 열처리장치
JPH03249178A (ja) * 1990-02-27 1991-11-07 Ulvac B T U Kk Cvd装置
JP3007432B2 (ja) * 1991-02-19 2000-02-07 東京エレクトロン株式会社 熱処理装置
JP3108459B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
JP3108460B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置

Also Published As

Publication number Publication date
US5330352A (en) 1994-07-19
KR930016142A (ko) 1993-08-26
KR100228254B1 (ko) 1999-11-01
JPH05217929A (ja) 1993-08-27

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