TW283264B - - Google Patents
Info
- Publication number
- TW283264B TW283264B TW084111981A TW84111981A TW283264B TW 283264 B TW283264 B TW 283264B TW 084111981 A TW084111981 A TW 084111981A TW 84111981 A TW84111981 A TW 84111981A TW 283264 B TW283264 B TW 283264B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
- H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
- H10D1/048—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors having PN junctions, e.g. hybrid capacitors with MOS control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6278741A JPH08139273A (ja) | 1994-11-14 | 1994-11-14 | 半導体集積回路および半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW283264B true TW283264B (en, 2012) | 1996-08-11 |
Family
ID=17601564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084111981A TW283264B (en, 2012) | 1994-11-14 | 1995-11-11 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6265755B1 (en, 2012) |
| JP (1) | JPH08139273A (en, 2012) |
| KR (1) | KR960019713A (en, 2012) |
| TW (1) | TW283264B (en, 2012) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3199004B2 (ja) * | 1997-11-10 | 2001-08-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3602745B2 (ja) * | 1999-06-30 | 2004-12-15 | 株式会社東芝 | 半導体装置 |
| US6528408B2 (en) * | 2001-05-21 | 2003-03-04 | Micron Technology, Inc. | Method for bumped die and wire bonded board-on-chip package |
| US6835628B2 (en) * | 2001-11-05 | 2004-12-28 | Intersil Americas Inc. | Integrated circuit with a MOS capacitor |
| JP2008199044A (ja) * | 2008-03-19 | 2008-08-28 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| US20220209750A1 (en) * | 2020-12-29 | 2022-06-30 | Texas Instruments Incorporated | Quality factor of a parasitic capacitance |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188353A (ja) * | 1986-02-14 | 1987-08-17 | Nec Corp | 半導体装置 |
| JPS6329962A (ja) * | 1986-07-23 | 1988-02-08 | Sony Corp | 半導体装置 |
| JP2623692B2 (ja) * | 1988-01-22 | 1997-06-25 | ソニー株式会社 | 半導体回路装置 |
| JPH04196583A (ja) * | 1990-11-28 | 1992-07-16 | Seiko Epson Corp | 半導体装置 |
| JP2630874B2 (ja) * | 1991-07-29 | 1997-07-16 | 三洋電機株式会社 | 半導体集積回路の製造方法 |
| KR940018967A (ko) * | 1993-01-30 | 1994-08-19 | 오가 노리오 | 반도체장치 및 그 제조방법 |
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1994
- 1994-11-14 JP JP6278741A patent/JPH08139273A/ja active Pending
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1995
- 1995-11-11 TW TW084111981A patent/TW283264B/zh active
- 1995-11-13 KR KR1019950040921A patent/KR960019713A/ko not_active Ceased
- 1995-11-14 US US08/557,484 patent/US6265755B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019713A (ko) | 1996-06-17 |
| US6265755B1 (en) | 2001-07-24 |
| JPH08139273A (ja) | 1996-05-31 |