TW283237B - - Google Patents
Info
- Publication number
- TW283237B TW283237B TW084107133A TW84107133A TW283237B TW 283237 B TW283237 B TW 283237B TW 084107133 A TW084107133 A TW 084107133A TW 84107133 A TW84107133 A TW 84107133A TW 283237 B TW283237 B TW 283237B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
- G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14867794A JPH07334999A (ja) | 1994-06-07 | 1994-06-07 | 不揮発性半導体記憶装置及びデータプロセッサ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW283237B true TW283237B (fr) | 1996-08-11 |
Family
ID=49381523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084107133A TW283237B (fr) | 1994-06-07 | 1995-07-10 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100353346B1 (fr) |
TW (1) | TW283237B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100574478B1 (ko) * | 1999-03-31 | 2006-04-27 | 주식회사 하이닉스반도체 | 메모리장치의 리페어 회로 |
KR100933839B1 (ko) * | 2008-03-10 | 2009-12-24 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 및 그 동작 방법 |
-
1995
- 1995-06-02 KR KR1019950014571A patent/KR100353346B1/ko not_active IP Right Cessation
- 1995-07-10 TW TW084107133A patent/TW283237B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100353346B1 (ko) | 2003-01-15 |
KR960002361A (ko) | 1996-01-26 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |